CN116364812A - Laser-assisted preparation method of Micro-LED array with flexible substrate - Google Patents
Laser-assisted preparation method of Micro-LED array with flexible substrate Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000005468 ion implantation Methods 0.000 claims abstract description 17
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 229920005570 flexible polymer Polymers 0.000 claims abstract description 6
- 239000000853 adhesive Substances 0.000 claims abstract description 5
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- 229910052751 metal Inorganic materials 0.000 claims description 18
- 150000002500 ions Chemical class 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
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- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 238000010008 shearing Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 abstract description 6
- 238000005336 cracking Methods 0.000 abstract 1
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- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 8
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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Abstract
The invention discloses a preparation method of a laser-assisted flexible substrate Micro-LED array, which comprises the following steps: sequentially growing a u-GaN buffer layer comprising n-GaN, an active layer and an epitaxial layer of p-GaN on an original substrate, and depositing SiO 2 For the ion implantation mask, micro-LED pixel points are defined in an ion implantation mode, the side wall damage to the Micro-LED chip caused by traditional dry etching is avoided, after the Micro-LED chip is bonded with a support buffer layer formed by an organic high-molecular flexible polymer, an original substrate of the Micro-LED is stripped by ultraviolet laser, the support buffer layer can relieve stress generated in the stripping process, the wafer is prevented from cracking and warping, the chemical mechanical polishing shears the n-GaN layer, the n-GaN layer is bonded with the flexible substrate coated with conductive adhesive on the surface, and the support buffer layer is stripped, so that the Micro-LED array of the flexible substrate is obtained.
Description
Technical Field
The invention relates to the field of semiconductor light-emitting devices, in particular to a preparation method of a laser-assisted flexible substrate Micro-LED array.
Background
By reducing the size of the traditional light-emitting diode (Light emitting diode, LED) to tens of micrometers or even tens of micrometers, the obtained small-size micrometer-level LED (Micro-LED) chip has the outstanding advantages of high brightness, low power consumption, long service life, high stability, wide application field and the like, and the response speed reaches tens of nanoseconds. Micro-LED based display technology, which can achieve high pixel density, is widely known as the next generation display technology. To realize electrical isolation between Micro-LED chips, the current common mode is plasma assisted dry etching, plasma bombards the side wall of the Micro-LED during etching, the generated damage becomes a non-radiative recombination center, so that the photoelectric property of the chips is reduced, atomic vacancies caused by bombardment also become a current leakage channel, the reverse leakage current of the Micro-LED is increased, the side wall damage is reduced, the surface non-radiative recombination is inhibited, and the method is very important for improving the performance of the Micro-LED device.
The Micro-LED chip is transferred onto the flexible substrate such as PDMS (polydimethylsiloxane) from the original substrate (Si, sapphire and the like), the formed flexible Micro-LED array is a key for realizing flexible electronic display and wearable electronic equipment, the highly integrated informationized display can realize the breakthrough of immersive information interactive display from plane to three-dimensional and from two-dimensional to three-dimensional, the informationized display can realize the breakthrough from plane to three-dimensional and from two-dimensional to three-dimensional, and real participation and high immersive experience are brought to users.
The laser stripping technology can strip the Micro-LED chip from the original substrate by means of laser and then transfer the Micro-LED chip onto the target substrate, and is a necessary process for preparing the Micro-LED array with the flexible substrate. However, high-pressure gas is generated in the stripping process, stress strain is generated at the stripping interface, defects such as dislocation, holes and cracks on the Micro-LED wafer are easily expanded, meanwhile, the nitride film is damaged, and the yield of Micro-LED laser stripping is reduced.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: the conventional dry etching definition of the Micro-LED mesa structure can introduce side wall damage caused by plasma bombardment, and reduces the photoelectric performance of the Micro-LED. The preparation of the flexible Micro-LED display pixel array needs to use a laser stripping method to strip the Micro-LED chip from the original substrate and then transfer the Micro-LED chip to the flexible polymer substrate, so that the stress concentration of the wafer easily occurs in the laser stripping process, thereby causing the wafer to crack and warp.
In order to solve the technical problems, the invention provides a preparation method of a laser-assisted flexible substrate Micro-LED array, which is characterized by comprising the following steps: the method comprises the following steps:
s1: providing a first substrate, and sequentially epitaxially growing a buffer layer and an epitaxial layer on the first substrate;
s2: depositing a first insulating layer on the epitaxial layer, and forming a pattern as a mask after photoetching;
s3: carrying out ion implantation treatment on the wafer, and introducing a high-resistance region to realize isolation between Micro-LED pixels;
s4: depositing a second insulating layer, performing photoetching and patterning, evaporating metal, and stripping to form an electrode;
s5: solidifying and bonding the Micro-LED chip and the supporting buffer layer, stripping the first substrate by laser, and shearing the epitaxial thickness by chemical mechanical polishing;
s6: bonding the Micro-LED chip with a second substrate coated with conductive adhesive on the surface;
s7: and demolding the support buffer layer to obtain the Micro-LED array with the flexible substrate.
According to the above scheme, the first substrate is sapphire (or Si, siC, gaN), the buffer layer is u-GaN, the epitaxial layer comprises n-GaN, active layer and p-GaN, and the active layer is In with multiple periods x Ga 1-x N/In y Ga 1-y N (or Al) x Ga 1-x N/Al y Ga 1- y N)。
According to the above scheme, the first insulating layer is SiO 2 The thickness is 100-200 nm, and as the hard mask for the subsequent ion implantation treatment, the thickness of the mask needs to ensure that the implanted ions cannot penetrate SiO 2 A layer. The second insulating layer is SiO 2 The thickness is 1-2 mu m, and the metal electrode mask is used for vapor deposition.
According to the scheme, etching the first insulating layer until the p-GaN layer is exposed, and implanting ions into the high-resistance region, wherein the implanted ions are F - (or N) - Etc.), the injection dose is 10 10 -10 15 ions/cm 2 With an injection energy of 10 4 eV-10 6 eV, the ion implantation depth is required to be ensured to be greater than the p-GaN thickness.
According to the scheme, the evaporated metal is a multi-metal layer of Cr, pt, au and the like, and the metal electrode is formed after stripping together with the residual photoresist after photoetching, and the area for forming the metal electrode is above the p-GaN layer without ion implantation.
According to the scheme, the supporting buffer layer is an organic high-molecular flexible polymer (PDMS, PET, organic silicon and the like) with the thickness of 100-200 mu m.
According to the scheme, the laser stripping technology uses continuous ultraviolet laser with the wavelength of 131-354 nm, the laser is incident from the n side of the Micro-LED chip, is focused on the interface between the substrate and the epitaxial layer, and the laser beam is scanned perpendicular to the surface of the Micro-LED wafer.
According to the scheme, the second substrate is an organic high-molecular flexible polymer (PDMS, PET, organic silicon and the like), the thickness of the second substrate is 100-200 mu m, the conductive adhesive is conductive epoxy resin, and the thickness of the second substrate is 2-3 mu m.
Compared with the prior art, the invention has the following advantages:
according to the invention, the electric isolation of the Micro-LED display array chip is realized by adopting an ion implantation mode, and the traditional dry etching mode is adopted to define the Micro-LED pixel points, so that the side wall of the Micro-LED chip is damaged, the side wall becomes a non-radiative composite center, the photoelectric performance of the chip is reduced, the situation can be avoided by adopting an ion implantation mode, and therefore, the performance of the Micro-LED chip is effectively improved, and the yield of chip preparation is improved. The supporting buffer layer is introduced in the laser stripping process, and the stripping interface can generate high pressure N in the laser stripping process 2 Defects such as dislocation, holes and cracks on the Micro-LED wafer are easy to expand, and stress strain of a stripping interface in a laser stripping process is released by bonding the Micro-LED chip and the supporting buffer layer, so that the stripping yield is improved, and the flexible substrate Micro-LED array with high yield and low damage is obtained.
Drawings
FIG. 1 is a schematic diagram of the complete structure of a Micro-LED array with a flexible substrate prepared by an example of the invention;
FIG. 2 is a schematic diagram of an example Micro-LED wafer epitaxial structure of the present invention;
FIG. 3 is a schematic illustration of ion implantation in accordance with an embodiment of the present invention;
FIG. 4 is a schematic view of an example evaporated metal electrode according to the present invention;
FIG. 5 is a schematic illustration of an example laser lift-off of the present invention;
FIG. 6 is a schematic diagram illustrating the demolding of an exemplary supporting buffer layer according to the present invention.
In the figure: 1. a flexible substrate; 2. a conductive epoxy; an n-GaN layer; 4. an active layer; 5. p-GaN without ion implantation treatment; 6. ion-implanted p-GaN;7. a metal electrode; siO 2 2 Masking; 9. a sapphire substrate; a u-GaN layer; 11. supporting the buffer layer; 12. an ultraviolet laser beam.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be described in further detail with reference to the accompanying drawings.
Example 1
A preparation method of a laser-assisted flexible substrate Micro-LED array specifically comprises the following steps:
s1: providing a sapphire substrate 1, and sequentially epitaxially growing a u-GaN layer 10, an InGaN/GaN active layer 4 with 8 periods and a p-GaN layer 5 on the sapphire substrate by using an MOCVD technology, as shown in FIG. 2;
s2: deposition of SiO 100nm thick on the structure described in step S1 by PECVD technique 2 Layer 8, after photoresist evening, exposure and development, transferring the photoresist pattern to SiO 2 RIE dry etching SiO on the layer 2 Forming SiO 2 Masking;
s3: performing ion implantation treatment on the structure in the step S2, wherein the ion implantation process is performed at room temperature, and the implanted ions are F - An implantation dose of 10 14 ions/cm 2 With an injection energy of 10 5 eV, the direction of implantation is perpendicular to the Micro-LED surface, as shown in fig. 3;
s4: the structure is again described in step S3 using PECVD techniquesDeposition of SiO with a thickness of 1 μm 2 Layer, even negative photoresist, exposure and development, RIE dry etching SiO 2 The etched area corresponds to the upper part of the p-GaN layer which is not subjected to ion implantation, a Cr/Pt/Au (50 nm/100nm/150 nm) multi-metal layer is evaporated by an electron beam, then the photoresist and the redundant metal are stripped to form a metal electrode 7, N 2 Annealing for 10mins at 500 ℃ in atmosphere to enable the metal layer and the p-GaN layer to form good ohmic contact, as shown in FIG. 4;
s5: spin-coating the heated PDMS on the surface of the structure in the step S4, cooling and solidifying the PDMS serving as a supporting buffer layer, bonding the PDMS with a Micro-LED, and stripping the Micro-LED substrate by adopting continuous ultraviolet laser with the wavelength of 350nm, as shown in FIG. 5;
s6: demolding the supporting buffer layer in a single-sided "take off" manner, as shown in fig. 6;
s7: and (3) cleaning the structure in the step (S6) in dilute hydrochloric acid and deionized water, then, carrying out water throwing and drying, placing the Micro-LED and PDMS (200 mu m) with the surface coated with conductive epoxy resin (2 mu m) in a vacuum bubble removal hot press, and standing to finish bonding to obtain the Micro-LED array of the flexible substrate, wherein the Micro-LED array is shown in figure 1.
Claims (7)
1. A preparation method of a laser-assisted flexible substrate Micro-LED array is characterized by comprising the following steps: the method comprises the following steps:
s1: providing a first substrate, and sequentially epitaxially growing a buffer layer and an epitaxial layer on the first substrate;
s2: depositing a first insulating layer on the epitaxial layer, and forming a pattern as a mask after photoetching;
s3: carrying out ion implantation treatment on the wafer, and introducing a high-resistance region to realize isolation between Micro-LED pixels;
s4: depositing a second insulating layer, performing patterning by photoetching, evaporating metal, and stripping to form an electrode;
s5: solidifying and bonding the Micro-LED chip and the supporting buffer layer, stripping the first substrate by laser, and shearing the epitaxial thickness by chemical mechanical polishing;
s6: bonding the Micro-LED chip with a second substrate coated with conductive adhesive on the surface;
s7: and demolding the support buffer layer to obtain the Micro-LED array with the flexible substrate.
2. The method for preparing the laser-assisted flexible substrate Micro-LED array according to claim 1, wherein the method comprises the following steps:
in the step S1, the first substrate is any one of sapphire, si, siC or GaN; the buffer layer is u-GaN; the epitaxial layer comprises n-GaN, an active layer and p-GaN; the active layer is a plurality of periods In x Ga 1-x N/In y Ga 1-y N or Al x Ga 1-x N/Al y Ga 1-y N。
3. The method for preparing the laser-assisted flexible substrate Micro-LED array according to claim 1 or 2, wherein the method comprises the following steps:
in the step S2, the first insulating layer is SiO 2 The thickness is 100-200 nm; for the hard mask of the subsequent ion implantation treatment, the thickness of the mask needs to ensure that the implanted ions cannot penetrate SiO 2 A layer;
in the step S2, etching the first insulating layer until exposing the p-GaN layer, implanting ions into the high-resistance region, wherein the implanted ions are F - (or N) - Etc.), the injection dose is 10 10 -10 15 ions/cm 2 With an injection energy of 10 4 eV-10 6 eV, the ion implantation depth is required to be ensured to be greater than the p-GaN thickness.
4. The method for preparing the laser-assisted flexible substrate Micro-LED array according to claim 3, wherein:
in the step S4, the second insulating layer is SiO 2 The thickness is 1-2 mu m, and the metal electrode mask is used for vapor deposition;
the evaporated metal is a multi-metal layer of Cr, pt, au and the like, and the metal electrode is formed after stripping with the residual photoresist after photoetching, and the area for forming the metal electrode is above the p-GaN layer without ion implantation.
5. The method for preparing the laser-assisted flexible substrate Micro-LED array according to claim 1, 2 or 4, wherein the method comprises the following steps:
in the step S5, the laser lift-off technology uses a continuous ultraviolet laser with a wavelength of 131-354 nm, the laser is incident from the n side of the Micro-LED chip, focused on the interface between the substrate and the epitaxial layer, and the laser beam is scanned perpendicular to the surface of the Micro-LED wafer.
6. The method for preparing the laser-assisted flexible substrate Micro-LED array according to claim 5, wherein the method comprises the following steps:
in the step S6, the second substrate is an organic high molecular flexible polymer, and the thickness of the second substrate is 100-200 mu m; the conductive adhesive is conductive epoxy resin and has a thickness of 2-3 mu m.
7. The method for preparing the laser-assisted flexible substrate Micro-LED array according to claim 1, 2, 4 or 6, wherein the method comprises the following steps: in the step S7, the supporting buffer layer is an organic high molecular flexible polymer, and the thickness is 100-200 mu m.
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| CN116779733A (en) * | 2023-08-24 | 2023-09-19 | 晶能光电股份有限公司 | Micro LED pixel unit forming method |
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| CN116779733A (en) * | 2023-08-24 | 2023-09-19 | 晶能光电股份有限公司 | Micro LED pixel unit forming method |
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