CN109742022A - Aluminium corrodes remaining method in a kind of production of improvement semiconductor devices - Google Patents
Aluminium corrodes remaining method in a kind of production of improvement semiconductor devices Download PDFInfo
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- CN109742022A CN109742022A CN201910264202.XA CN201910264202A CN109742022A CN 109742022 A CN109742022 A CN 109742022A CN 201910264202 A CN201910264202 A CN 201910264202A CN 109742022 A CN109742022 A CN 109742022A
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- polycrystalline
- aluminium
- protection materials
- semiconductor devices
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Abstract
The invention discloses aluminium in a kind of production of improvement semiconductor devices to corrode remaining method.Method includes the following steps: 1) be coated with the protection materials of liquid before sputtered aluminum, the protection materials are filled between each polycrystalline item in gap, and be covered on the upside of polycrystalline strip area；2) heat, the protection materials of liquid are solidified, and form flat protection structure on the upside of polycrystalline area；3) sputtered aluminum operation and the operation of aluminium engraving are executed；4) the solid protection materials between polycrystalline item on the upside of in gap and polycrystalline area are removed.The present invention can effectively prevent the phenomenon that metallic aluminium residual of special construction, improve the quality of product.
Description
Technical field
The present invention relates to semiconductor fields, and in particular to aluminium corrodes remaining side in a kind of production of improvement semiconductor devices
Method.
Background technique
It in semiconductor devices production process, needs to carry out sputtered aluminum operation, then carry out aluminium engraving operation, to be formed
Conducting wire in circuit.Certain current goods batch is because have special polycrystalline structure, while dielectric layer filling capacity is not strong, causes more
There are lesser gaps for crystal bar, as shown in Figure 1, can also fill up aluminium in medium layer gap after metallic aluminium filling, but in subsequent corruption
During etching technique, because medium layer gap is smaller, corrosive liquid cannot be introduced into gap, and you corrode aluminium, so can occur such as to scheme
The residual of metallic aluminium shown in 2.
Summary of the invention
The purpose of the present invention is in view of the deficienciess of the prior art, to provide aluminium in a kind of production of improvement semiconductor devices rotten
Lose remaining method.
To achieve the above object, the present invention provides aluminium in a kind of production of improvement semiconductor devices to corrode remaining method,
The following steps are included:
1) it is coated with the protection materials of liquid before sputtered aluminum, the protection materials are filled between each polycrystalline item in gap,
And it is covered on the upside of polycrystalline strip area；
2) heat, the protection materials of liquid are solidified, and form flat protection structure on the upside of polycrystalline area；
3) sputtered aluminum operation and the operation of aluminium engraving are executed；
4) the solid protection materials between polycrystalline item on the upside of in gap and polycrystalline area are removed.
Further, the protection materials are polyimides.
Further, the solid polyimides is removed by oxygen plasma.
Further, the condition of the heat treatment in the step 2 are as follows: 260 to 400 DEG C of heating temperature, heating time 1
To 3 hours.
The utility model has the advantages that the present invention can effectively prevent the phenomenon that metallic aluminium residual of special construction, the quality of product is improved.
Detailed description of the invention
Fig. 1 is the structural schematic diagram in the production technology of the prior art after sputtered aluminum；
Fig. 2 is the structural schematic diagram in the production technology of the prior art after aluminium engraving；
Fig. 3 is the structural schematic diagram after the polyimide curing being coated in the embodiment of the present invention；
Fig. 4 is the structural schematic diagram in the embodiment of the present invention after sputtered aluminum；
Fig. 5 is the structural schematic diagram in the embodiment of the present invention after aluminium engraving；
Fig. 6 is the structural schematic diagram after removing polyimides in the embodiment of the present invention.
Specific embodiment
In the following with reference to the drawings and specific embodiments, the present invention is furture elucidated, and the present embodiment is with technical solution of the present invention
Premised under implemented, it should be understood that these examples are only for illustrating the present invention and are not intended to limit the scope of the present invention.
As shown in Fig. 3 to 6, the embodiment of the invention provides aluminium in a kind of production of improvement semiconductor devices to corrode remaining side
Method, method includes the following steps:
1) it is coated with the protection materials of liquid before sputtered aluminum, the protection materials are filled between each polycrystalline item in gap,
And it is covered on the upside of polycrystalline strip area.Protection materials are high temperature resistant and corrosion-resistant material, can prevent from melting in sputtered aluminum
It is corroded when with aluminium engraving, loses protecting effect, protection materials can use SOT, it is preferred to use polyimides.
2) heat, the protection materials of liquid are solidified, and form flat protection structure on the upside of polycrystalline area.
The condition of heat treatment is preferred are as follows: 260 to 400 DEG C of heating temperature, heating time 1 to 3 hour.
3) sputtered aluminum operation and the operation of aluminium engraving are executed.The specific steps and existing skill of sputtered aluminum operation and the operation of aluminium engraving
Art is identical, repeats no more.
4) the solid protection materials between polycrystalline item on the upside of in gap and polycrystalline area are removed.Polyimides can be adopted
It is eroded with the concentrated sulfuric acid, it is further preferred that being removed by oxygen plasma.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, other parts not specifically described belong to the prior art or common knowledge.In the premise for not departing from the principle of the invention
Under, several improvements and modifications can also be made, these modifications and embellishments should also be considered as the scope of protection of the present invention.
Claims (4)
1. aluminium corrodes remaining method in a kind of improvement semiconductor devices production, which comprises the following steps:
1) it is coated with the protection materials of liquid before sputtered aluminum, the protection materials are filled between each polycrystalline item in gap,
And it is covered on the upside of polycrystalline strip area；
2) heat, the protection materials of liquid are solidified, and form flat protection structure on the upside of polycrystalline area；
3) sputtered aluminum operation and the operation of aluminium engraving are executed；
4) the solid protection materials between polycrystalline item on the upside of in gap and polycrystalline area are removed.
2. aluminium corrodes remaining method in improvement semiconductor devices production according to claim 1, which is characterized in that described
Protection materials are polyimides.
3. aluminium corrodes remaining method in improvement semiconductor devices production according to claim 2, which is characterized in that described
Solid polyimides is removed by oxygen plasma.
4. aluminium corrodes remaining method in improvement semiconductor devices production according to claim 2, which is characterized in that described
The condition of heat treatment in step 2 are as follows: 260 to 400 DEG C of heating temperature, heating time 1 to 3 hour.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910264202.XA CN109742022A (en) | 2019-04-03 | 2019-04-03 | Aluminium corrodes remaining method in a kind of production of improvement semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910264202.XA CN109742022A (en) | 2019-04-03 | 2019-04-03 | Aluminium corrodes remaining method in a kind of production of improvement semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109742022A true CN109742022A (en) | 2019-05-10 |
Family
ID=66371417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910264202.XA Pending CN109742022A (en) | 2019-04-03 | 2019-04-03 | Aluminium corrodes remaining method in a kind of production of improvement semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109742022A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130149A (en) * | 1999-08-16 | 2000-10-10 | Taiwan Semiconductor Manufacturing Company | Approach for aluminum bump process |
| US6479376B1 (en) * | 2001-03-16 | 2002-11-12 | Taiwan Semiconductor Manufacturing Company | Process improvement for the creation of aluminum contact bumps |
| CN108417528A (en) * | 2018-02-05 | 2018-08-17 | 武汉新芯集成电路制造有限公司 | A method of improving residue on aluminium pad |
-
2019
- 2019-04-03 CN CN201910264202.XA patent/CN109742022A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6130149A (en) * | 1999-08-16 | 2000-10-10 | Taiwan Semiconductor Manufacturing Company | Approach for aluminum bump process |
| US6479376B1 (en) * | 2001-03-16 | 2002-11-12 | Taiwan Semiconductor Manufacturing Company | Process improvement for the creation of aluminum contact bumps |
| CN108417528A (en) * | 2018-02-05 | 2018-08-17 | 武汉新芯集成电路制造有限公司 | A method of improving residue on aluminium pad |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190510 |
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| RJ01 | Rejection of invention patent application after publication |