CN109728098B - Thin film transistor, sensor, detection method, detection device and detection system - Google Patents
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Abstract
The present disclosure provides a thin film transistor, a sensor, a detection method, a detection device, and a detection system, wherein the thin film transistor includes: the semiconductor device comprises a first insulating layer, a grid electrode, an active layer, a source electrode assembly and a drain electrode assembly, wherein the first insulating layer comprises a first surface and a second surface which are oppositely arranged; the grid is arranged on the first surface of the first insulating layer; the active layer is arranged on the second surface of the first insulating layer and is used for reacting with copper ions in the body to be detected; the source electrode assembly and the drain electrode assembly are arranged on the second surface of the first insulating layer and are respectively positioned on two opposite sides of the active layer; the sensor comprises a power supply, a signal generation module and the thin film transistor, wherein the power supply is respectively connected with the signal generation module and the thin film transistor; the thin film transistor is used for reacting with copper ions in the body to be detected and generating a detection signal; and the signal generation module is used for generating an in vitro identifiable communication message based on the detection signal. The embodiment of the invention can detect the concentration of copper ions in a body to be detected.
Description
Technical Field
The disclosure relates to the technical field of medical instruments, in particular to a thin film transistor, a sensor, a detection method, a detection device and a detection system.
Background
Neurodegenerative diseases (neuro-degenerative diseases) are a disease state in which the cellular neurons of the brain and spinal cord are lost. Neurodegenerative diseases (NDD) mainly include Alzheimer's Disease (AD), Parkinson's Disease (PD), Amyotrophic Lateral Sclerosis (ALS), and Huntington's Disease (HD), etc. The brain and spinal cord are composed of neurons that have diverse functions, such as controlling movement, processing sensory information, and making decisions. Brain and spinal cord cells are generally non-regenerative, and excessive damage can be devastating and irreversible, so that no modified drugs exist for such diseases that could prevent the disease from occurring, and the treatment regimen is primarily directed to the management of the disease condition. Early detection of such diseases would greatly ameliorate the progression of the disease if early treatment could be detected, and thus, it is important to determine whether such diseases could be detected early. However, the existing neurodegenerative disease patients usually go to medical services and can be diagnosed only when obvious changes appear in external behavior, and the early diagnosis is difficult to find.
In recent years, according to research of relevant medical teams, excessive copper ions in brain cells can cause neurodegenerative diseases, but in the existing medical field, the detection of the copper ions is mainly based on in-vitro blood detection, the detection precision of the copper ions in the brain cells is low, and real-time detection is difficult to achieve.
Disclosure of Invention
In view of the above problems in the prior art, an object of the present invention is to provide a thin film transistor, a sensor, a detection method, a detection device, and a detection system capable of detecting the concentration of copper ions in a sample.
According to a first aspect of the present disclosure, there is provided a thin film transistor including:
a first insulating layer including a first face and a second face oppositely disposed;
a gate electrode disposed on a first face of the first insulating layer;
the active layer is arranged on the second surface of the first insulating layer and is used for reacting with copper ions in a body to be detected;
the source electrode assembly and the drain electrode assembly are arranged on the second surface of the first insulating layer and are respectively positioned on two opposite sides of the active layer.
In some embodiments, the source component comprises a source electrode abutting against a side of the active layer and a second insulating layer disposed outside the source electrode; the drain electrode assembly comprises a drain electrode attached to the side of the active layer and a third insulating layer disposed outside the drain electrode.
In some embodiments, the first, second and third insulating layers are all silicon dioxide insulating layers.
In some embodiments, the gate is a graphene electrode.
In some embodiments, the source and drain are carbon nanotube electrodes.
In some embodiments, the active layer is a black phosphorus nanosheet active layer.
According to a second aspect of the present disclosure, there is provided a sensor comprising: the power supply, the signal generation module and the thin film transistor are connected with the signal generation module and the thin film transistor respectively;
the thin film transistor is used for reacting with copper ions in a body to be detected and generating a detection signal;
and the signal generation module is used for generating a communication message based on the detection signal.
In some embodiments, the power source is a nanogenerator.
According to a third aspect of the present disclosure, there is provided a detection method using the sensor as described above, including:
receiving a communication message from the sensor, wherein the communication message comprises a detection signal detected by the sensor;
and determining the concentration of the copper ions in the body to be detected according to the detection signal.
According to a fourth aspect of the present disclosure, there is provided a detection apparatus including:
a receiving module, configured to receive the communication message from the sensor as described above, wherein the communication message includes a detection signal detected by the sensor;
and the determining module is used for determining the concentration of copper ions in the biological cells of the body to be detected according to the detection signals.
According to a fifth aspect of the present disclosure, there is provided a detection system comprising: a sensor as described above and a detection device as described above.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
This section provides a general summary of various implementations or examples of the technology described in this disclosure, and is not a comprehensive disclosure of the full scope or all features of the disclosed technology.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below, and it is apparent that the drawings in the following description relate only to some embodiments of the present disclosure and are not limiting to the present disclosure.
Fig. 1 is a schematic structural diagram of a thin film transistor according to an embodiment of the present invention;
FIG. 2 is a block diagram of a sensor according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a sensor associated with a cell according to an embodiment of the present invention;
FIG. 4 is a schematic flow chart of a detection method according to an embodiment of the present invention;
FIG. 5 is a block diagram of a detecting device according to an embodiment of the present invention;
fig. 6 is a block diagram of a detection system according to an embodiment of the present invention.
Reference numerals:
1-a first insulating layer; 2-a grid; 3-an active layer; a 4-source electrode; 5-a drain electrode; 6-a second insulating layer; 7-a third insulating layer; 8-a thin film transistor; 9-a power supply; 10-a signal generation module.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be described below clearly and completely with reference to the accompanying drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items.
To maintain the following description of the embodiments of the present disclosure clear and concise, a detailed description of known functions and known components have been omitted from the present disclosure.
Fig. 1 is a schematic structural diagram of a thin film transistor according to an embodiment of the present invention, and referring to fig. 1, the thin film transistor according to the embodiment of the present invention includes: the transistor comprises a first insulating layer 1, a grid 2, an active layer 3, a source electrode component and a drain electrode component, wherein the first insulating layer 1 comprises a first surface and a second surface which are oppositely arranged; the gate electrode 2 is disposed on a first face of the first insulating layer 1; the active layer 3 is arranged on the second surface of the first insulating layer 1 and is used for reacting with copper ions in a body to be detected; the source component and the drain component are both arranged on the second surface of the first insulating layer 1 and are respectively positioned on two opposite sides of the active layer 3. It should be noted that the size of the thin film transistor is so small that the thin film transistor can pass through the blood brain barrier into, for example, the brain under irradiation of, for example, the near infrared spectrum, but the specific size thereof is not limited herein.
The copper ions in the body to be detected can react with Ascorbic Acid (AA) and catalyze O2Producing free radicals which unbalance oxidation and antioxidation in vivoOverproduction and/or failure to be eliminated in time can result in damage to cells and tissues of the body. The active layer 3 of the thin film transistor can react with copper ions in a body to be detected, such as a brain, and the copper ions can be adsorbed to the surface of the active layer 3, so that the forbidden bandwidth of the active layer 3 can be changed, and the carrier mobility of the active layer 3 is influenced. Under the same voltage applied to the gate 2, the active layer 3 reacts with copper ions of different concentrations, and then the carrier mobility variation thereof is different, resulting in different currents between the source electrode assembly and the drain electrode assembly, and the purpose of detecting the concentration of the copper ions in the body to be detected can be achieved by detecting the current between the source electrode assembly and the drain electrode assembly. In addition, the active layer 3 reacts with copper ions in a body to be detected, such as a brain, so that the purpose of repairing brain tissues can be achieved, and a certain treatment effect is achieved.
In some embodiments, the active layer 3 may be a black phosphorus nanosheet active layer. Copper ions and black phosphorus nanosheet active layers can interact through supermolecules, the black phosphorus nanosheet has a folded honeycomb-shaped atomic structure, each phosphorus atom has 5 outermost orbital electrons which are three single electrons and one lone pair electron respectively, the three single electrons and other three phosphorus atoms form covalent bonds, the outer layer is exposed with one lone pair electron, the copper ions can interact with the phosphorus atoms with the exposed lone pair electrons and then are adsorbed to the surface of the black phosphorus nanosheet, and the combination of the copper ions and the black phosphorus nanosheet is realized through the adsorption effect of the supermolecules. The black phosphorus nanosheet has the advantages that the forbidden bandwidth and the carrier mobility of the black phosphorus nanosheet are obviously changed after the black phosphorus nanosheet is combined with copper ions, and the black phosphorus nanosheet has no obvious toxic or side effect on normal biological tissues and is suitable for in vivo detection. However, the active layer 3 is not limited to the black phosphorus nanosheet material.
In some embodiments, the source electrode assembly may include a source electrode 4 abutting against a side of the black phosphorus nanosheet active layer and a second insulating layer 6 disposed outside the source electrode 4; the drain electrode assembly may comprise a drain electrode 5 abutting against the side of the black phosphorus nanosheet active layer and a third insulating layer 7 disposed outwardly of the drain electrode 5. The second insulating layer 6 and the third insulating layer 7 can prevent the source electrode 4 and the drain electrode 5 from being in direct contact with the body to be detected, and prevent the body to be detected, for example, body fluid or blood, from affecting the current between the source electrode 4 and the drain electrode 5. In addition, the second insulating layer 6 and the third insulating layer 7 can also function to fix the source electrode 4 and the drain electrode 5.
In some embodiments, the first insulating layer 1, the second insulating layer 6, and the third insulating layer 7 can be silicon dioxide insulating layers. The silicon dioxide is non-toxic, stable in chemical property, good in biocompatibility and not easy to damage brain tissues of a detected body. Of course, the first insulating layer 1, the second insulating layer 6, and the third insulating layer 7 are not limited to the above materials.
In some embodiments, the source 4 and drain 5 may both be carbon nanotube electrodes. The carbon nano tube has stable chemical property, is not easy to cause harm to brain tissues of a detected body, has better electrical characteristics, has more stable structure, is not easy to damage, is easy to process into a tiny structure, and is beneficial to the miniaturization of the thin film transistor.
In some embodiments, the gate 2 may be a graphene electrode. The chemical property of graphite alkene electrode is stable, is difficult to treat the brain tissue of detecting the body and produces harm, has better electricity characteristic, and the structure is comparatively stable, is difficult to damage, and the easy processing becomes small structure, is of value to this thin-film transistor's miniaturization. The source 4, the gate 2, and the drain 5 are not limited to the above materials.
Fig. 2 is a structural block diagram of a sensor according to an embodiment of the present invention, and referring to fig. 2, the sensor according to the embodiment of the present invention includes: the power supply 9, the signal generation module 10 and the thin film transistor 8 are connected, and the power supply 9 is connected with the signal generation module 10 and the thin film transistor 8 respectively. For example, fig. 3 is a schematic diagram of a sensor and a cell combination according to an embodiment of the present invention, in this embodiment, the power supply 9 includes a first current output terminal, a second current output terminal and a current input terminal, the first current output terminal of the power supply 9 is connected to the drain 5 of the thin film transistor 8, the second current output terminal of the power supply 9 is connected to the gate 2 of the thin film transistor 8, the current input terminal of the signal generation module 10 is connected to the source 4 of the thin film transistor 8, and the current output terminal of the signal generation module 10 is connected to the current input terminal of the power supply 9, so that a complete detection circuit is formed, the thin film transistor 8 interacts with copper ions on the cell, and the detection circuit can detect the copper ion concentration in the cell.
The thin film crystal can be used for detecting copper ions in any scene, but the thin film transistor 8 is extremely tiny in size, so that the thin film transistor can penetrate through blood brain barrier to enter the brain under the irradiation of near infrared spectrum, therefore, the object to be detected can be the brain, namely, the thin film crystal can be used for reacting with the copper ions in the brain and generating a detection signal, and the detection signal is a current signal. The signal generating module 10 can receive the detection signal and generate a communication message capable of being identified in vitro based on the detection signal, so that the in vitro detection device can identify the communication message and calculate the copper ion concentration in the body to be detected, such as the brain, based on the communication message, thereby enabling the in vivo detection of the copper ion concentration.
In one embodiment, the communication message may be a message propagated via a wireless signal. Such as ultrasound, so that the extracorporeal detection apparatus can conveniently receive the communication message. That is, the signal generating module 10 is a wireless signal generating module 10 for generating a wireless signal capable of being wirelessly transmitted to the outside of the body. Of course, the specific type of the wireless signal is not limited as long as the signal generation module 10 for generating the wireless signal can satisfy the requirement of being implanted in vivo.
In another embodiment, the communication message may also be a message that is propagated by electrical signals. For example, the electrical signal is an electrical signal that can be acquired by a brain wave detecting device in the related art, so that the communication message can be acquired by the brain wave detecting device, and then the copper ion concentration is obtained by a calculation method such as feature recognition. That is, the signal generating module 10 is an electric signal generating means for generating an electric signal that can be detected by the brain wave detecting means. For example, an electrical signal of a specific frequency band is generated, and after the electroencephalogram signal is acquired by the electroencephalogram detection device, the electrical signal of the specific frequency band is extracted through frequency domain analysis, so that the communication message can be acquired. Of course, the communication message may be in other forms as long as it can be identified by the external detection device.
In some embodiments, the power source 9 may be a nano-generator, which is small in size, and is beneficial for miniaturization of the sensor, and after being implanted in a body, the power source may detect energy in the body, such as body fluid flow or blood flow, and convert the energy into electric energy to maintain the normal operation of the sensor. Obviously, the power supply 9 is not limited to the above form.
The embodiment of the invention also provides a detection method, which is used for detecting the concentration of the copper ions in the body to be detected by using the sensor. Fig. 4 is a schematic flow chart of a detection method according to an embodiment of the present invention, and referring to fig. 4, the detection method specifically includes the following steps:
s101, receiving a communication message from the sensor, wherein the communication message includes a detected detection signal, and the detection signal is a current signal generated by the thin film transistor 8.
The communication message may be a message propagated by a wireless signal, such as an ultrasonic signal. Therefore, the in-vitro detection device can conveniently receive the communication message. Of course, the specific type of the wireless signal is not limited as long as the volume of the signal generation module 10 for generating the wireless signal can meet the requirement of being implanted in vivo. The communication message may also be a message propagated by an electrical signal, for example, a signal capable of affecting brain waves, so that brain wave detection can be performed by using a brain wave detection device in the prior art, and then the communication message is acquired by using a calculation method such as feature recognition, and the copper ion concentration is calculated. Of course, the communication message may be in other forms as long as it can be identified by the external detection device.
And S102, determining the concentration of the copper ions in the body to be detected according to the detection signal.
Since the active layer 3 of the thin film transistor 8 can react with copper ions in a body to be detected, such as a brain, after the thin film transistor is implanted into the body, the forbidden bandwidth of the active layer 3 changes after the reaction, and the carrier mobility of the active layer 3 is further influenced. Under the same voltage applied to the gate 2, the active layer 3 reacts with copper ions of different concentrations, and then the carrier mobility variation thereof is different, which causes the current between the source component and the drain component to be different, that is, a detection signal in the form of current is generated, and the signal generation module 10 generates a communication message identifiable in vitro based on the detection signal, where the communication message includes the detection signal. Thus, the concentration of copper ions in the body to be detected, for example, in the brain, can be calculated based on the communication message.
Fig. 5 is a block diagram of a detecting apparatus according to an embodiment of the present invention, and referring to fig. 5, the detecting apparatus according to the embodiment of the present invention includes: the device comprises a receiving module and a determining module.
The receiving module is used for acquiring a communication message from the sensor, wherein the communication message comprises a detected detection signal. In some embodiments, the communication message may be a message propagated by a wireless signal, such as an ultrasonic signal. In this case, the receiving module is a device corresponding to the signal generating module 10 and capable of acquiring the radio signal. Of course, the specific type of the wireless signal is not limited, and the specific type of the receiving module is also not limited, as long as the wireless signal can be acquired. In other embodiments, the communication message may also be a message that is propagated by an electrical signal, such as a signal that can affect brain waves. In this case, the receiving module may be, for example, a brain wave detecting device in the related art, by which the brain wave affected by the communication message can be detected. Thereafter, a computational method, such as feature recognition, is utilized to obtain the communication message.
The determination module is used for determining the concentration of copper ions in the body to be detected, such as the brain, according to the communication message. Since the active layer 3 of the thin film transistor 8 can react with copper ions in a body to be detected, such as a brain, after the thin film transistor is implanted into the body, the forbidden bandwidth of the active layer 3 changes after the reaction, and the carrier mobility of the active layer 3 is further influenced. Under the same voltage applied to the gate 2, the active layer 3 reacts with copper ions of different concentrations, and then the carrier mobility variation thereof is different, which causes the current between the source component and the drain component to be different, that is, a detection signal in the form of current is generated, and the signal generation module 10 generates a communication message identifiable in vitro based on the detection signal, where the communication message includes the detection signal. Thus, the concentration of copper ions in the body to be detected, for example, in the brain, can be calculated based on the communication message.
Fig. 6 is a block diagram of a detection system according to an embodiment of the present invention, and referring to fig. 6, the detection system according to the present invention includes the sensor and the detection device as described above.
After the sensor is implanted into a human body, the active layer 3 of the thin film transistor 8 can react with copper ions in the human body to be detected, such as a brain, and after the reaction, the forbidden band width of the active layer 3 per se can be changed, so that the carrier mobility of the active layer 3 is influenced. Under the same voltage applied to the gate 2, the active layer 3 reacts with copper ions of different concentrations, and then the carrier mobility variation thereof is different, which causes the current between the source component and the drain component to be different, that is, a detection signal in the form of current is generated, and the signal generation module 10 generates a communication message that can be identified in vitro based on the detection signal.
The detection device comprises a receiving module and a determining module, wherein the receiving module can acquire communication messages from the sensor, and the determining module can determine the concentration of copper ions in a body to be detected, such as the brain, according to the communication messages.
Through the cooperation of the sensor and the detection device, the concentration of copper ions in the body to be detected, such as the brain, can be conveniently and timely detected.
The above embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and the scope of the present invention is defined by the claims. Various modifications and equivalents may be made by those skilled in the art within the spirit and scope of the present invention, and such modifications and equivalents should also be considered as falling within the scope of the present invention.
Claims (10)
1. A thin film transistor, comprising:
a first insulating layer including a first face and a second face oppositely disposed;
a gate electrode disposed on a first face of the first insulating layer;
the active layer is arranged on the second surface of the first insulating layer and is used for reacting with copper ions in a body to be detected;
the source electrode assembly and the drain electrode assembly are arranged on the second surface of the first insulating layer and are respectively positioned on two opposite sides of the active layer;
the source electrode assembly comprises a source electrode attached to the side of the active layer and a second insulating layer arranged outside the source electrode; the drain electrode assembly comprises a drain electrode attached to the side of the active layer and a third insulating layer disposed outside the drain electrode.
2. The thin film transistor according to claim 1, wherein the first insulating layer, the second insulating layer, and the third insulating layer are silicon dioxide insulating layers.
3. The thin film transistor of claim 1, wherein the gate electrode is a graphene electrode.
4. The thin film transistor of claim 1, wherein the source and drain electrodes are carbon nanotube electrodes.
5. The thin film transistor of any of claims 1-4, wherein the active layer is a black phosphorus nanosheet active layer.
6. A sensor, comprising: a power supply, a signal generation module and the thin film transistor of any one of claims 1 to 5, wherein the power supply is respectively connected with the signal generation module and the thin film transistor;
the thin film transistor is used for reacting with copper ions in a body to be detected and generating a detection signal;
and the signal generation module is used for generating a communication message based on the detection signal.
7. The sensor of claim 6, wherein the power source is a nanogenerator.
8. A detection method using the sensor according to claim 6 or 7, comprising:
receiving a communication message from the sensor, wherein the communication message comprises a detection signal detected by the sensor;
and determining the concentration of the copper ions in the body to be detected according to the detection signal.
9. A detection device for interacting with a sensor according to claim 6 or 7, comprising:
the receiving module is used for receiving a communication message from the sensor, wherein the communication message comprises a detection signal detected by the sensor;
and the determining module is used for determining the concentration of the copper ions in the body to be detected according to the detection signal.
10. A detection system, comprising: the sensor of claim 6 or 7 and the detection device of claim 9.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474471A (en) * | 2013-08-29 | 2013-12-25 | 京东方科技集团股份有限公司 | Thin film transistor and preparation method thereof, array substrate and preparation method thereof, and display device |
| JP2015065415A (en) * | 2013-08-29 | 2015-04-09 | 新日鉄住金化学株式会社 | Gate insulation film, organic thin film transistor, and method for manufacturing organic thin film transistor |
| CN108807551A (en) * | 2018-07-04 | 2018-11-13 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT), detection device and its detection pressure or the method for illumination |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100938885B1 (en) * | 2003-06-30 | 2010-01-27 | 엘지디스플레이 주식회사 | Liquid Crystal Display and method for fabricating of the same |
| JP2005108930A (en) * | 2003-09-29 | 2005-04-21 | Sony Corp | Thin-film transistor and manufacturing method therefor |
| GB0724735D0 (en) * | 2007-12-19 | 2008-01-30 | Psynova Neurotech Ltd | Methods and biomarkers for diagnosing and monitoring psychotic disorders |
| CN101267020A (en) * | 2008-04-29 | 2008-09-17 | 友达光电股份有限公司 | Organic film transistor and its making method |
| KR101703511B1 (en) * | 2008-06-27 | 2017-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Thin film transistor |
| JP5199752B2 (en) * | 2008-06-30 | 2013-05-15 | 住友化学株式会社 | ORGANIC THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, DISPLAY MEMBER USING THE ORGANIC TRANSISTOR AND DISPLAY |
| CN102393365B (en) * | 2011-09-08 | 2014-06-18 | 北京泰德制药股份有限公司 | Method for measuring content of metallic ion in metal protein |
| CN102664193A (en) * | 2012-04-01 | 2012-09-12 | 京东方科技集团股份有限公司 | Conductive structure, manufacturing method thereof, thin film transistor, array substrate, and display device |
| CN102723367B (en) * | 2012-06-29 | 2015-02-11 | 昆山工研院新型平板显示技术中心有限公司 | Oxide semiconductor thin film transistor |
| JP6372848B2 (en) * | 2014-03-28 | 2018-08-15 | Ｔｉａｎｍａ Ｊａｐａｎ株式会社 | TFT ion sensor, measuring method using the same, and TFT ion sensor device |
| CN104502424B (en) * | 2014-08-19 | 2019-08-02 | 北京大学 | It is a kind of based on electrolyte-oxide layer-semiconductor structure copper ion detection method |
| CN104766891B (en) * | 2015-03-18 | 2019-01-29 | 华南理工大学 | A kind of source-drain electrode and preparation method, thin film transistor (TFT) and preparation method of thin film transistor (TFT) |
| JP6514578B2 (en) * | 2015-06-17 | 2019-05-15 | 東京応化工業株式会社 | Etching composition and method of manufacturing conductive film |
| KR102523974B1 (en) * | 2016-02-15 | 2023-04-20 | 삼성전자주식회사 | Photoelelctronic device including charge barrier |
| US9899547B2 (en) * | 2016-04-25 | 2018-02-20 | International Business Machines Corporation | Multi-wavelength detector array incorporating two dimensional and one dimensional materials |
| CN106653860A (en) * | 2016-12-21 | 2017-05-10 | 佛山科学技术学院 | Thin film transistor and preparation method therefor |
| CN106653862A (en) * | 2017-01-24 | 2017-05-10 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate and fabrication method for thin film transistor |
| CN107202831A (en) * | 2017-06-05 | 2017-09-26 | 深圳市华星光电技术有限公司 | The assay method of copper ion concentration in a kind of copper acid etch liquid |
| CN107245719B (en) * | 2017-06-07 | 2019-12-27 | 京东方科技集团股份有限公司 | Metal ion concentration adjusting device, adjusting method and etching equipment |
| CN107170835B (en) * | 2017-07-07 | 2020-08-21 | 合肥鑫晟光电科技有限公司 | Thin film transistor, preparation method thereof and array substrate |
| CN107525827A (en) * | 2017-07-18 | 2017-12-29 | 合肥工业大学 | One kind is based on the self-driven copper ion real-time detection apparatus of organic semi-conductor current |
| CN107403832A (en) * | 2017-07-26 | 2017-11-28 | 华南理工大学 | A kind of high performance thin film transistor and application thereof |
| CN107469082B (en) * | 2017-08-21 | 2021-04-16 | 中南大学 | Application of black phosphorus nanosheet |
| CN107845687B (en) * | 2017-10-27 | 2021-10-29 | 合肥鑫晟光电科技有限公司 | Thin film transistor, preparation method thereof and electronic equipment |
| CN107819039A (en) * | 2017-11-09 | 2018-03-20 | 深圳市华星光电半导体显示技术有限公司 | Thin film transistor (TFT), method for fabricating thin film transistor and liquid crystal display device |
| CN108404824A (en) * | 2018-01-16 | 2018-08-17 | 吉林师范大学 | A kind of Ag@Cu2O-rGO two-dimensional nanos composite material and preparation method and application |
| CN109060922B (en) * | 2018-08-03 | 2020-06-05 | 京东方科技集团股份有限公司 | Thin film transistor, preparation method thereof and sensor |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474471A (en) * | 2013-08-29 | 2013-12-25 | 京东方科技集团股份有限公司 | Thin film transistor and preparation method thereof, array substrate and preparation method thereof, and display device |
| JP2015065415A (en) * | 2013-08-29 | 2015-04-09 | 新日鉄住金化学株式会社 | Gate insulation film, organic thin film transistor, and method for manufacturing organic thin film transistor |
| CN108807551A (en) * | 2018-07-04 | 2018-11-13 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT), detection device and its detection pressure or the method for illumination |
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