CN109727885B - Method for testing void ratio of aluminum back surface field of battery piece - Google Patents
Method for testing void ratio of aluminum back surface field of battery piece Download PDFInfo
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- CN109727885B CN109727885B CN201811526315.4A CN201811526315A CN109727885B CN 109727885 B CN109727885 B CN 109727885B CN 201811526315 A CN201811526315 A CN 201811526315A CN 109727885 B CN109727885 B CN 109727885B
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- 238000012360 testing method Methods 0.000 title claims abstract description 68
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 44
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 239000011800 void material Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000007790 scraping Methods 0.000 claims abstract description 11
- 238000006073 displacement reaction Methods 0.000 claims abstract description 8
- 239000012459 cleaning agent Substances 0.000 claims abstract description 7
- 239000000080 wetting agent Substances 0.000 claims abstract description 7
- 230000001154 acute effect Effects 0.000 claims abstract description 4
- 238000001035 drying Methods 0.000 claims abstract description 4
- 238000005259 measurement Methods 0.000 claims abstract description 4
- 238000005406 washing Methods 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 125000003158 alcohol group Chemical group 0.000 claims description 5
- 239000002002 slurry Substances 0.000 abstract 2
- 238000005192 partition Methods 0.000 abstract 1
- 238000005245 sintering Methods 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910000676 Si alloy Inorganic materials 0.000 description 4
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003906 humectant Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for testing the void ratio of an aluminum back field of a battery piece, which comprises the following steps of S1, placing a sample on a partition plate with the back face facing upwards, S2, dripping wetting agents on a region to be tested on the surface of the sample, standing, S3, scraping aluminum slurry of the region to be tested by a scraper, enabling a blade to form an acute angle with the surface of the sample when the aluminum slurry is scraped, S4, washing the surface of the sample by cleaning agents, drying the surface of the sample, S5, fixing the processed sample on a test table of a 3D microscope, S6, selecting a low-power mirror, adjusting the displacement of a test platform to enable a lens to be aligned with the center position of the region to be tested, focusing to adjust the image in a window to be the clearest, finely adjusting the displacement to enable the largest number of laser openings to appear in the test window, measuring and recording the length L N of each laser opening line void region, calculating the void ratio of the current measurement according to a formula, S7, moving the test platform, continuing to carry out the step S6, and.
Description
Technical Field
The invention belongs to the field of solar cells, and particularly relates to a method for testing the void ratio of an aluminum back surface field of a cell.
Background
Photovoltaic technology is a technology that converts solar energy into electrical energy using large-area p-n junction diodes. This p-n junction diode is called a solar cell. The semiconductor materials for manufacturing the solar cell have certain forbidden bandwidth, when the solar cell is irradiated by solar energy, photons with energy exceeding the forbidden bandwidth generate electron-hole pairs in the solar cell, the electron-hole pairs are separated by the p-n junction, the asymmetry of the p-n junction determines the flowing direction of different types of photon-generated carriers, and power can be output outwards through external circuit connection. This is similar in principle to a conventional electrochemical cell.
The industrial production of p-type crystalline silicon solar cells usually adopts an all-aluminum back surface field structure, namely, aluminum paste is printed on the whole back surface, and an aluminum back surface field is formed after sintering. The disadvantage of this structure is that there is no back passivation and low back reflectivity, which affects the voltage and current performance of the cell. The above disadvantages are overcome by a local aluminum back surface field cell which employs a thin film having a passivation effect to passivate the back surface of the cell while increasing the reflectivity of the back surface. The passivation film effectively passivates a large number of dangling bonds and defects (such as dislocation, grain boundary, point defect and the like) on the surface of the silicon material, so that the silicon surface recombination rate of photon-generated carriers is reduced, the effective service life of minority carriers is prolonged, and the photoelectric conversion efficiency of the solar cell is promoted to be improved. The passivation film has the effect of increasing back reflection, so that the absorption of the silicon material to sunlight is increased, and the concentration of photon-generated carriers is increased, so that the photocurrent density is increased.
In order to lead out the current, a hole or an open line is usually required to be formed on the back passivation film, and then the aluminum paste is printed and sintered to form a local aluminum back field. The total area of the holes or lines generally accounts for 1-15% of the back surface, and too small an area increases the contact resistance of the back surface, and too large an area increases the recombination rate of the back surface, both of which affect the photoelectric conversion efficiency of the cell. The hole or line is opened by laser or chemical etching. The printing aluminum paste generally adopts a full back field pattern, namely the aluminum paste covers all back surface areas except the back electrode.
In the sintering process of the solar cell, good metal-semiconductor contact is formed on the front side and the back side simultaneously, the front side silver paste is used for contacting an emitter, the back side aluminum paste forms liquid-phase aluminum-silicon alloy with silicon in the sintering process, and aluminum-doped epitaxial silicon, namely local aluminum back fields and aluminum-silicon alloy are formed at the positions of laser openings in the cooling process. Because partial silicon of the liquid-phase aluminum-silicon alloy diffuses into the printed aluminum metal layer instead of returning to the original position in the process of cooling, cavities are formed at the positions of laser openings at a certain probability, the aluminum-silicon alloy is not filled in the cavities, and the surface recombination rate at the positions is higher due to the fact that the local aluminum back field is thin, so that black spots or black lines appear on an electroluminescence graph and the electrical property of a battery is negatively influenced.
Therefore, the aluminum back field void ratio needs to be tested. The following outstanding problems exist in the existing aluminum back field void ratio test:
1. a scanning electron microscope SEM is needed to carry out section testing, and the single-point testing consumes long time;
SEM test can only be performed on a local part, and the whole sample cannot be observed;
SEM equipment is expensive and part of the institution or company has no test conditions.
There is a need for improvement in view of the above problems.
Disclosure of Invention
The invention aims to provide a method for testing the void ratio of an aluminum back field of a battery piece, which is low in cost and wide in application range.
In order to achieve one of the above objects, the present invention provides a method for testing the void ratio of an aluminum back surface field of a battery plate, comprising the following steps:
s1, placing the sample on a separator with the back face upward, wherein the area of the separator is larger than that of the battery piece;
s2, dripping a wetting agent on the area to be detected on the surface of the sample, and standing for a preset time;
s3, scraping the aluminum paste of the area to be detected by a scraper, wherein the plane of the blade forms an acute angle with the surface of the sample during scraping;
s4, washing the surface of the sample by using a cleaning agent, and drying the surface of the sample;
s5, placing the processed sample on a 3D microscope test table, and fixing the processed sample on the table;
s6, selecting a low power lens, adjusting the displacement of the test platform to enable the lens to face the central position of the area to be tested, focusing and adjusting the image in the window to be clearest, finely adjusting the displacement to enable the number N of the laser openings to appear most in the test window, measuring and recording the length L N of the hollow area of each laser opening line, and obtaining and recording the length L N of the hollow area of each laser opening line according to a formula
Calculating the void ratio of the measurement;
and S7, moving the test platform, continuing to perform the step S6 on the area to be tested, repeating the step S6 for multiple times, and obtaining an average value, namely the void ratio of the area to be tested.
As a further improvement of the embodiment of the invention, the testing method further includes selecting a plurality of regions to be tested on the surface of the sample, repeating steps S6 and S7, and respectively obtaining the void ratios of the plurality of regions of the sample to represent the void ratio information of the single battery piece.
As a further improvement of the embodiment of the invention, one to-be-detected area near four corners of the surface of the sample and one to-be-detected area in the middle of the surface of the sample are selected, and the voidage of the five areas of the sample is respectively obtained to represent the voidage information of the single battery piece.
As a further improvement of the embodiment of the present invention, in step S2, the area of the selected region to be measured is between 0.5cm by 0.5cm and 3cm by 3 cm.
As a further improvement of the embodiment of the present invention, in step S3, the blade plane is at an angle of 20 to 60 degrees with respect to the sample surface during scraping.
As a further improvement of the embodiment of the present invention, in step S2, the selected humectant is alcohol or pure water.
As a further improvement of the embodiment of the present invention, in step S4, the selected cleaning agent is alcohol or pure water.
As a further improvement of the embodiment of the present invention, in step S4, the sample surface is blow-dried using an air gun.
As a further improvement of the embodiment of the present invention, in step S2, the preset time of the standing is 10 to 50 seconds.
As a further improvement of the embodiment of the present invention, in step S7, the number of repetitions is 5 to 20 times.
Compared with the prior art, the method for testing the void ratio of the aluminum back field of the battery piece can test the void ratio of the aluminum back field of the battery piece by using a conventional microscope; moreover, the time consumption of single-chip single-point test is short; the measurable data volume is increased, and the representation accuracy is improved; the method can be used for testing the local voidage of the battery piece and can also be used for testing and representing the overall voidage. Therefore, the testing cost is reduced, and the local voidage testing and the overall voidage testing are applicable and wide in application range.
Drawings
FIG. 1 is a schematic view of the angle at which the spatula is placed with the sample in a preferred embodiment of the invention;
FIG. 2 is a schematic representation of a two-dimensional image comparison of void and normal regions on a test sample in a preferred embodiment of the invention;
FIG. 3 is a schematic illustration of the void region of a test sample in a preferred embodiment of the present invention;
FIG. 4 is a three-dimensional image comparison of a void region and a normal region of a test sample in a preferred embodiment of the present invention;
FIG. 5 is a schematic diagram of the region to be tested of the test sample in the preferred embodiment of the present invention.
Detailed Description
The present invention will be described in detail below with reference to specific embodiments shown in the drawings. These embodiments are not intended to limit the present invention, and structural, methodological, or functional changes made by those skilled in the art according to these embodiments are included in the scope of the present invention.
It will be understood that terms used herein such as "upper," "above," "lower," "below," and the like, refer to relative positions in space and are used for convenience in description to describe one element or feature's relationship to another element or feature as illustrated in the figures. The spatially relative positional terms may be intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures.
As shown in fig. 1 and fig. 2, in a preferred embodiment of the present invention, a method for testing the void ratio of an aluminum back surface field of a cell comprises the following steps:
s1, placing the sample on a separator with the back face upward, wherein the area of the separator is larger than that of the battery piece;
s2, dripping a wetting agent on the area to be detected on the surface of the sample, and standing for a preset time;
s3, scraping the aluminum paste of the area to be detected by a scraper, wherein the blade forms an acute angle with the surface of the sample during scraping;
s4, washing the surface of the sample by using a cleaning agent, and drying the surface of the sample;
s5, placing the processed sample on a 3D microscope test table, and fixing the processed sample on the table;
s6, selecting a low power lens, adjusting the displacement of the test platform to enable the lens to face the central position of the area to be tested, focusing and adjusting the image in the window to be clearest, finely adjusting the displacement to enable the number N of the laser openings to appear most in the test window, measuring and recording the length L N of the hollow area of each laser opening line, and obtaining and recording the length L N of the hollow area of each laser opening line according to a formula
Calculating the void ratio of the measurement;
and S7, moving the test platform, continuing to perform the step S6 on the area to be tested, repeating the step S6 for multiple times, and obtaining an average value, namely the void ratio of the area to be tested.
By adopting the method for testing the voidage of the aluminum back field of the cell, the voidage of the aluminum back field can be tested by using a conventional microscope, the testing cost is low, and the time consumption of single-chip single-point testing is short; the measurable data volume is increased, and the characterization accuracy is improved. The method for testing the voidage of the aluminum back surface field can be used for testing the local voidage of the battery piece and testing and representing the overall voidage, and is wide in application range.
In the step S1, the sample, i.e. the finished battery piece, is preferably a plastic spacer, preferably a clean plastic spacer, which is mainly used to support the sample to be tested, and is cheap and therefore low in cost, and has suitable hardness, and is too hard or too soft, which is likely to cause the sample to be broken.
In the above step S2, the wetting agent is used to prevent dust from occurring during the process of scraping the aluminum paste, so that the aluminum paste is relatively easy to scrape; the wetting agent may be alcohol or pure water, and in this embodiment is preferably alcohol, which is volatile and dries quickly and does not react with the sample. The area of the selected region to be measured is 0.5cm x 0.5cm to 3cm x 3cm, in addition, 1-3 drops of alcohol can be dropped on the surface of the sample by adopting a rubber head dropper, and the preset time for standing can be 10-50 seconds. Of course, the number of drops of alcohol and the time of standing can also be adjusted according to actual conditions.
In step S3, referring to fig. 1, the angle θ between the blade 20 and the surface of the sample 10 during scraping is preferably 20 to 60 degrees, and the angle is too large, so that the downward component force is large, which may damage the al-si alloy layer under the aluminum paste, and affect the actual test.
In step S4, the cleaning agent may be alcohol or pure water, but in this embodiment, alcohol is preferred, which is easily volatile and dries quickly. In addition, the sample surface can be blown dry using an air gun to speed up the test.
In the above step S5, the sample may be fixed by vacuum-sucking on the stage by the suction device provided in the 3D microscope. The sample can also be pressed against it without warping, which would affect the test.
In the above step S6, the objective lens with the magnification of x5 times can be selected, and as shown in fig. 2, the a region is a normal region, the normal region is silvery white, and the width is uniform in the two-dimensional field of view under the 3D microscope; the B area is a hollow area which is a central silver thin line and is black at the edge. As shown in fig. 3, a region marked by √ in the two-dimensional image of the 3D microscope is a void region. Referring to fig. 4, an x10 objective lens is selected, and in a three-dimensional scanning image of a 3D microscope, a normal area a is relatively flat silvery white, a hollow area B is partially concave, and the color is non-silvery.
In step S7, when the test sample size is too small, the data deviation is large, the selection of the sample size may vary for samples of different manufacturers, and the preferred number of repetitions is 5-20, which can ensure the accuracy of the test result.
Further, the method for testing the void ratio of the aluminum back surface field of the battery piece further comprises the steps of selecting a plurality of areas to be tested on the surface of the sample, repeating the steps S6 and S7, and respectively obtaining the void ratios of the plurality of areas of the sample to represent the void ratio information of the single battery piece. The contact between the edge of the silicon chip and the furnace belt thimble in the sintering process and the tightness of the sintering furnace lead to high sintering temperature center and low two sides. The furnace belt thimble supports the cell during sintering, so the four corners and the center of the edge need to be monitored. Referring to fig. 5, preferably, one (a, b, c, d) of the regions to be measured near four corners of the sample surface and one (e) of the regions to be measured in the middle of the sample surface are selected, and the void ratios of the five regions (a, b, c, d, e) of the sample are respectively obtained to represent the void ratio information of the single cell. Of course, the size and position of the region to be measured can be adjusted according to the actual contact position of the battery piece and the furnace belt and the size of the thimble.
By adopting the method for testing the void ratio of the aluminum back field of the battery piece, the void ratio of the aluminum back field can be tested by using a conventional microscope; moreover, the time consumption of single-chip single-point test is short; the measurable data volume is increased, and the representation accuracy is improved; the method can be used for testing the local voidage of the battery piece and can also be used for testing and representing the overall voidage. Therefore, the testing cost is reduced, and the local voidage testing and the overall voidage testing are applicable and wide in application range.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (10)
1. A method for testing the void ratio of an aluminum back surface field of a battery piece is characterized by comprising the following steps:
s1, placing the sample on a separator with the back face upward, wherein the area of the separator is larger than that of the battery piece;
s2, dripping a wetting agent on the area to be detected on the surface of the sample, and standing for a preset time;
s3, scraping the aluminum paste of the area to be detected by a scraper, wherein the blade forms an acute angle with the surface of the sample during scraping;
s4, washing the surface of the sample by using a cleaning agent, and drying the surface of the sample;
s5, placing the processed sample on a 3D microscope test table, and fixing the processed sample on the table;
s6, selecting a low power lens, adjusting the displacement of the test platform to enable the lens to face the central position of the area to be tested, focusing and adjusting the image in the window to be clearest, finely adjusting the displacement to enable the number N of the laser openings to appear most in the test window, measuring and recording the length L N of the hollow area of each laser opening line, and obtaining and recording the length L N of the hollow area of each laser opening line according to a formula
Calculating the void ratio of the measurement;
and S7, moving the test platform, continuing to perform the step S6 on the area to be tested, repeating the step S6 for multiple times, and obtaining an average value, namely the void ratio of the area to be tested.
2. The method for testing the void content of the aluminum back surface field of the battery piece as claimed in claim 1, further comprising selecting a plurality of regions to be tested on the surface of the sample, and repeating the steps S6 and S7 to obtain the void content of the plurality of regions of the sample respectively to represent the void content information of the battery piece.
3. The method for testing the void content of the aluminum back surface field of the battery piece according to claim 2, wherein one of the regions to be tested near four corners of the surface of the sample and one of the regions to be tested in the middle of the surface of the sample are selected, and the void contents of the five regions of the sample are respectively obtained to represent the void content information of the single battery piece.
4. The method of claim 1, wherein in step S2, the area of the selected area to be tested is between 0.5cm x 0.5cm and 3cm x 3 cm.
5. The method for testing void ratio of aluminum back surface field of battery plate as claimed in claim 1, wherein the blade plane is at an angle of 20 to 60 degrees with respect to the sample surface during the scraping process in step S3.
6. The method of claim 1, wherein in step S2, the wetting agent is alcohol or pure water.
7. The method for testing the void ratio of the aluminum back surface field of the battery piece as claimed in claim 1, wherein in step S4, the selected cleaning agent is alcohol or pure water.
8. The method for testing the void ratio of the aluminum back surface field of the battery piece as claimed in claim 1, wherein in step S4, the sample surface is dried by using an air gun.
9. The cell aluminum back surface field voidage testing method of claim 1, wherein the predetermined time of standing in step S2 is 10-50 seconds.
10. The method for testing the void ratio of the aluminum back surface field of the battery piece according to claim 1, wherein the repetition frequency in step S7 is 5-20 times.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104864813A (en) * | 2015-05-18 | 2015-08-26 | 苏州阿特斯阳光电力科技有限公司 | Method for measuring height and width of crystalline silica solar cell grid line |
| CN105162416A (en) * | 2015-10-13 | 2015-12-16 | 苏州阿特斯阳光电力科技有限公司 | Testing method of local contact windowing region in local contact back passivation solar cell |
| CN107068777A (en) * | 2017-02-13 | 2017-08-18 | 晶澳（扬州）太阳能科技有限公司 | A kind of local Al-BSF solar cell and preparation method thereof |
| CN207868207U (en) * | 2017-12-12 | 2018-09-14 | 苏州阿特斯阳光电力科技有限公司 | Photovoltaic cell and corresponding halftone |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104864813A (en) * | 2015-05-18 | 2015-08-26 | 苏州阿特斯阳光电力科技有限公司 | Method for measuring height and width of crystalline silica solar cell grid line |
| CN105162416A (en) * | 2015-10-13 | 2015-12-16 | 苏州阿特斯阳光电力科技有限公司 | Testing method of local contact windowing region in local contact back passivation solar cell |
| CN107068777A (en) * | 2017-02-13 | 2017-08-18 | 晶澳（扬州）太阳能科技有限公司 | A kind of local Al-BSF solar cell and preparation method thereof |
| CN207868207U (en) * | 2017-12-12 | 2018-09-14 | 苏州阿特斯阳光电力科技有限公司 | Photovoltaic cell and corresponding halftone |
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