CN109725384B - Germanium-based optical waveguide and preparation method thereof - Google Patents
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Abstract
The invention provides a germanium-based optical waveguide and a preparation method thereof. The preparation method comprises the following steps: s1, sequentially forming a first silicon nitride layer, a germanium seed layer and a second silicon nitride layer on the first substrate, the first silicon nitride layer, the germanium seed layer and the second silicon nitride layer being sequentially stacked in a direction away from the substrate; s2, forming a first groove communicated with the germanium seed crystal layer in the second silicon nitride layer, and filling germanium materials in the first groove to form a ridge waveguide core layer; and S3, forming a third silicon nitride layer covering the second silicon nitride layer and the ridge waveguide core layer, wherein the second silicon nitride layer and the third silicon nitride layer form an upper cladding of the germanium-based optical waveguide, the first silicon nitride layer is a lower cladding of the germanium-based optical waveguide, and the ridge waveguide core layer is positioned between the upper cladding and the lower cladding. The structure can realize that the light transmitting wave band of the germanium-based waveguide extends to about 7.5 mu m of infrared wave, so that the working wavelength of the photonic integrated chip with the germanium-based waveguide can be extended to the intermediate infrared wave band.
Description
Technical Field
The invention relates to the technical field of photoelectron technology and optical fiber communication, in particular to a germanium-based optical waveguide and a preparation method thereof.
Background
Silicon-based photonic integration has received much attention and has been rapidly developed in recent years due to its compatibility with CMOS processes. However, for prior art silicon-based photonic integrated devices, due to SiO2The absorption coefficient is obviously increased for light waves with the wavelength more than 3.7 mu m, so that the working wavelength is only in the near infrared band.
As researchers in the development of technology desire to extend the operating wavelength of photonic integrated chips to the mid-infrared band, conventional SOI structures have not been able to accommodate this requirement.
Disclosure of Invention
The invention mainly aims to provide a germanium-based optical waveguide and a preparation method thereof, and aims to solve the problem that the working wavelength of a photonic integrated chip in the prior art is only limited to a near-infrared band.
In order to achieve the above object, according to an aspect of the present invention, there is provided a method of manufacturing a germanium-based optical waveguide, comprising the steps of: s1, sequentially forming a first silicon nitride layer, a germanium seed layer and a second silicon nitride layer on the first substrate, the first silicon nitride layer, the germanium seed layer and the second silicon nitride layer being sequentially stacked in a direction away from the substrate; s2, forming a first groove communicated with the germanium seed crystal layer in the second silicon nitride layer, and filling germanium materials in the first groove so as to form a ridge waveguide core layer by utilizing the germanium seed crystal layer and the germanium materials; and S3, forming a third silicon nitride layer covering the second silicon nitride layer and the ridge waveguide core layer, wherein the second silicon nitride layer and the third silicon nitride layer form an upper cladding of the germanium-based optical waveguide, the first silicon nitride layer is a lower cladding of the germanium-based optical waveguide, and the ridge waveguide core layer is positioned between the upper cladding and the lower cladding.
Further, the step of forming a germanium seed layer includes: forming a single crystal germanium layer on a second substrate and bonding the single crystal germanium layer to the first silicon nitride layer; the second substrate is removed and the single crystal germanium layer is etched to form a germanium seed layer.
Further, the second substrate is a silicon substrate.
Further, the thickness of the first silicon nitride layer is 500nm to 1.5 μm.
Furthermore, the thickness of the germanium seed crystal layer is 40-50 nm.
Further, the step of forming the ridge waveguide core layer includes: epitaxially growing a germanium material on the surface of the germanium seed crystal layer corresponding to the first groove; the germanium material is planarized to obtain a ridge waveguide core layer comprised of the planarized germanium material and a germanium seed layer.
Further, the first substrate is a silicon substrate.
According to another aspect of the present invention, there is provided a germanium-based optical waveguide comprising a first substrate, the germanium-based optical waveguide further comprising: the first silicon nitride layer is arranged on the first substrate and is a lower cladding layer of the germanium-based optical waveguide; the ridge waveguide core layer is arranged on the surface of one side, away from the first substrate, of the first silicon nitride layer, the ridge waveguide core layer is provided with a plurality of second grooves, and the ridge waveguide core layer is made of germanium; the second silicon nitride layer is arranged in the second groove; and the third silicon nitride layer is arranged on one sides of the ridge waveguide core layer and the second silicon nitride layer, which are far away from the first substrate, and the third silicon nitride layer and the second silicon nitride layer are connected to form an upper cladding of the germanium-based optical waveguide.
Further, the ridge waveguide core layer includes a germanium seed layer and a plurality of ridge protrusions, with a second groove between adjacent ridge protrusions.
Further, the lower cladding layer has a thickness of 500nm to 1.5 μm.
By applying the technical scheme of the invention, the preparation method of the germanium-based optical waveguide is provided, and the germanium-silicon nitride waveguide can be obtained by the preparation method, wherein the lower cladding, the core layer and the upper cladding are respectively made of SiNx/Ge/SiNx materials. Theoretical derivation or experiments prove that the structure can realize that the light-transmitting wave band of the germanium-based waveguide extends to about 7.5 mu m of infrared wave, so that the working wavelength of the photonic integrated chip with the germanium-based waveguide can be extended to the intermediate infrared wave band, and the application field of the photonic integrated chip is expanded.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic perspective view illustrating a bulk structure after a first silicon nitride layer is formed on a substrate in a method for manufacturing a germanium-based optical waveguide according to an embodiment of the present disclosure;
fig. 2 is a schematic perspective view showing a bulk structure after forming a single crystal germanium layer on a second substrate in a method for manufacturing a germanium-based optical waveguide according to an embodiment of the present application;
fig. 3 shows a schematic perspective view of a substrate after bonding the single crystal germanium layer of fig. 2 to the first silicon nitride layer of fig. 1;
FIG. 4 is a schematic representation of the bulk structure after removing the second substrate shown in FIG. 3 and etching the single crystal germanium layer to form a germanium seed layer;
FIG. 5 is a schematic illustration of the bulk volume after forming a second silicon nitride layer on the germanium seed layer of FIG. 4;
FIG. 6 is a schematic perspective view of the substrate after forming a first recess in the second silicon nitride layer of FIG. 5 in communication with the germanium seed layer;
FIG. 7 is a schematic perspective view of the substrate after epitaxially growing a germanium material on the surface of the germanium seed layer corresponding to the first recess shown in FIG. 6;
FIG. 8 is a schematic perspective view of the bulk after planarization of the germanium material of FIG. 7 to provide a ridge waveguide core layer of planarized germanium material and a germanium seed layer;
fig. 9 is a schematic perspective view of the substrate after formation of a third silicon nitride layer covering the second silicon nitride layer and the ridge waveguide core layer shown in fig. 7;
fig. 10 is a schematic cross-sectional view of a germanium-based optical waveguide according to an embodiment of the present application.
Wherein the figures include the following reference numerals:
10. a first substrate; 20. a first silicon nitride layer; 30. a second substrate; 40. a ridge waveguide core layer; 410. a germanium seed layer; 411. a single crystal germanium layer; 420. a germanium material; 510. a second silicon nitride layer; 511. a first groove; 520. a third silicon nitride layer.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged under appropriate circumstances in order to facilitate the description of the embodiments of the invention herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
As described in the background, the wavelength of operation of photonic integrated chips in the prior art is limited to the near infrared band. The inventors of the present invention have studied the above problems and proposed a method for manufacturing a germanium-based optical waveguide, as shown in fig. 1 to 9, comprising the steps of: s1, sequentially forming a first silicon nitride layer 20, a germanium seed layer 410, and a second silicon nitride layer 510 on the first substrate 10, the first silicon nitride layer 20, the germanium seed layer 410, and the second silicon nitride layer 510 being sequentially stacked in a direction away from the substrate; s2, forming a first groove 511 in the second silicon nitride layer 510 in communication with the germanium seed layer 410, and filling the first groove 511 with a germanium material 420 to form a ridge waveguide core layer 40 using the germanium seed layer 410 and the germanium material 420; s3, forming a third silicon nitride layer 520 covering the second silicon nitride layer 510 and the ridge waveguide core layer 40, wherein the second silicon nitride layer 510 and the third silicon nitride layer 520 form an upper cladding of the ge-based optical waveguide, the first silicon nitride layer 20 is a lower cladding of the ge-based optical waveguide, and the ridge waveguide core layer 40 is located between the upper cladding and the lower cladding.
The germanium-silicon nitride waveguide can be obtained by the preparation method, wherein the lower cladding layer, the core layer and the upper cladding layer are respectively made of SiNx/Ge/SiNx materials. Theoretical derivation or experiments prove that the structure can realize that the light-transmitting wave band of the germanium-based waveguide extends to about 7.5 mu m of infrared wave, so that the working wavelength of the photonic integrated chip with the germanium-based waveguide can be extended to the intermediate infrared wave band, and the application field of the photonic integrated chip is expanded.
An exemplary embodiment of a method of fabricating a germanium-based optical waveguide provided in accordance with the present invention will now be described in more detail. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to only the embodiments set forth herein. It should be understood that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of these exemplary embodiments to those skilled in the art.
First, step S1 is executed: a first silicon nitride layer 20, a germanium seed layer 410, and a second silicon nitride layer 510 are sequentially formed on a first substrate 10, and the first silicon nitride layer 20, the germanium seed layer 410, and the second silicon nitride layer 510 are sequentially stacked in a direction away from the substrate, as shown in fig. 1 to 5.
The first substrate 10 may include a silicon substrate, a silicon germanium substrate, or a silicon-on-insulator substrate SOI, and those skilled in the art can select the type of the first substrate 10 according to actual needs.
A person skilled in the art may form the first silicon nitride layer 20 on the first substrate 10 by a deposition process such as L PCVD and PECVD, the process conditions of the deposition process may be appropriately set according to the type of the deposition process, and will not be described herein.
In a preferred embodiment, the step of forming the germanium seed layer 410 comprises: forming a single crystal germanium layer 411 on a second substrate 30 and bonding the single crystal germanium layer 411 with the first silicon nitride layer 20, as shown in fig. 2 and 3; the second substrate 30 is removed and the single crystal germanium layer 411 is etched to form a germanium seed layer 410 as shown in fig. 4.
In the above preferred embodiment, the second substrate 30 may include a silicon substrate, a silicon germanium substrate or a silicon-on-insulator substrate SOI, and those skilled in the art can reasonably select the kind of the second substrate 30 according to actual needs.
A person skilled in the art may form the above-described single crystal germanium layer 411 on the first substrate 10 using an epitaxial process that is conventional in the art; moreover, a person skilled in the art may also use a conventional bond and a conventional process in the prior art to realize the bonding between the single crystal germanium layer 411 and the first silicon nitride layer 20, and process conditions of the epitaxial process and the bonding process may also be set reasonably according to actually selected process types, which is not described herein again.
In the preferred embodiment, the single crystal germanium layer 411 formed by epitaxy has a larger thickness, and the thin germanium seed layer 410 is formed by etching the single crystal germanium layer 411 and is used as a seed layer for the subsequent germanium material deposition, so that the growth efficiency of the subsequent germanium material can be improved; more preferably, the germanium seed layer 410 has a thickness of 40 to 50 nm.
After the step S1 is performed, a step S2 is performed: a first groove 511 communicating with the germanium seed layer 410 is formed in the second silicon nitride layer 510, and a germanium material 420 is filled in the first groove 511 to form the ridge waveguide core layer 40 using the germanium seed layer 410 and the germanium material 420, as shown in fig. 6 to 8.
A person skilled in the art may form the first groove 511 in the second silicon nitride layer 510 by using a conventional photolithography process in the prior art, so that the first groove 511 is communicated with the germanium seed layer 410 located therebelow.
In a preferred embodiment, the step of forming the ridge waveguide core layer 40 includes: epitaxially growing a germanium material 420 on the surface of the germanium seed layer 410 corresponding to the first recess 511, as shown in fig. 7; the germanium material 420 is planarized to obtain a ridge waveguide core layer 40 comprised of the planarized germanium material 420 and a germanium seed layer, as shown in fig. 8.
In the preferred embodiment, the ridge waveguide core layer 40 is obtained by epitaxially growing the germanium material 420 on the surface of the germanium seed layer 410 to fill the first groove 511, and then removing the germanium material 420 except the first groove 511 by the planarization process, wherein the germanium material 420 is higher than the first groove 511 and covers a portion of the surface of the second silicon nitride layer 510 after the epitaxial growth. The planarization process may be a chemical mechanical polishing CMP.
After the step S2 is performed, a step S3 is performed: a third silicon nitride layer 520 is formed to cover the second silicon nitride layer 510 and the ridge waveguide core layer 40, and as shown in fig. 9, the second silicon nitride layer 510 and the third silicon nitride layer 520 constitute an upper cladding layer of the germanium-based optical waveguide, the first silicon nitride layer 20 is a lower cladding layer of the germanium-based optical waveguide, and the ridge waveguide core layer 40 is located between the upper cladding layer and the lower cladding layer.
A person skilled in the art may form the first silicon nitride layer 20 on the first substrate 10 by a deposition process such as L PCVD and PECVD, and the process conditions of the deposition process may be set appropriately according to the type of the deposition process, which is not described herein again.
According to another aspect of the present invention, there is also provided a germanium-based optical waveguide, as shown in fig. 10, including a first substrate 10, and further including a first silicon nitride layer 20, a ridge waveguide core layer 40, a second silicon nitride layer 510, and a third silicon nitride layer 520, the first silicon nitride layer 20 being disposed on the first substrate 10, and the first silicon nitride layer 20 being a lower cladding layer of the germanium-based optical waveguide; the ridge waveguide core layer 40 is arranged on the surface of one side, away from the first substrate 10, of the first silicon nitride layer 20, the ridge waveguide core layer 40 is provided with a plurality of second grooves, and the ridge waveguide core layer 40 is made of germanium; the second silicon nitride layer 510 is disposed in the second groove; the third silicon nitride layer 520 is disposed on the ridge waveguide core layer 40 and the second silicon nitride layer 510 on the side away from the first substrate 10, and the third silicon nitride layer 520 and the second silicon nitride layer 510 are connected to form an upper cladding of the germanium-based optical waveguide.
As the lower cladding layer, the core layer and the upper cladding layer formed in the germanium-based optical waveguide are made of SiNx/Ge/SiNx materials respectively. Through an experimental surface, the structure can realize that the light-transmitting wave band of the germanium-based waveguide extends to about 7.5 mu m of infrared wave, so that the working wavelength of the photonic integrated chip with the germanium-based waveguide can be extended to the intermediate infrared wave band, and the application field of the photonic integrated chip is expanded.
In the germanium-based optical waveguide according to the present invention, the ridge waveguide core layer 40 includes a germanium seed layer 410 and a plurality of ridge protrusions, and as shown in fig. 10, the second groove is provided between adjacent ridge protrusions.
In the germanium-based optical waveguide according to the present invention, the first silicon nitride layer 20 preferably has a thickness of 500nm to 1.5 μm. The preferred thickness described above effectively confines the light to the interior of the waveguide, based on the refractive index difference between Ge/SiN.
The method for manufacturing the above-mentioned germanium-based optical waveguide according to the present invention will be further described with reference to the following examples.
Example 1
The preparation method of the germanium-based optical waveguide provided by the embodiment comprises the following steps:
depositing a first silicon nitride layer with the thickness of 1000mn on a first substrate;
epitaxially forming a single crystal germanium layer on a second substrate, bonding the single crystal germanium layer with the first silicon nitride layer, etching to remove the second substrate, and etching the single crystal germanium layer to form a germanium seed layer with a thickness of 50 nm;
etching the second silicon nitride layer to form a first groove communicated with the germanium seed crystal layer, and extending germanium materials in the first groove to form a ridge waveguide core layer;
and depositing to form a third silicon nitride layer covering the second silicon nitride layer and the ridge waveguide core layer, wherein the second silicon nitride layer and the third silicon nitride layer form an upper cladding of the germanium-based optical waveguide, the first silicon nitride layer is a lower cladding of the germanium-based optical waveguide and has the thickness of 1000nm, and the ridge waveguide core layer is positioned between the upper cladding and the lower cladding.
Theoretical analysis shows that the SiN/Ge film is transparent at 7.5 microns, the SiN film is transparent within 0.3-7.5 microns, and the Ge film is transparent within 1.9-18 microns, so that the light transmission range of the waveguide with the SiN/Ge/SiN structure can reach 1.9-7.5 microns.
From the above description, it can be seen that the above-described embodiments of the present invention achieve the following technical effects:
the germanium-silicon nitride waveguide can be obtained by the preparation method, wherein the lower cladding layer, the core layer and the upper cladding layer are respectively made of SiNx/Ge/SiNx materials. Theoretical derivation or experiments prove that the structure can realize that the light-transmitting wave band of the germanium-based waveguide extends to about 7.5 mu m of infrared wave, so that the working wavelength of the photonic integrated chip with the germanium-based waveguide can be extended to the intermediate infrared wave band, and the application field of the photonic integrated chip is expanded.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A preparation method of a germanium-based optical waveguide is characterized by comprising the following steps:
s1, sequentially forming a first silicon nitride layer (20), a germanium seed layer (410) and a second silicon nitride layer (510) on a first substrate (10), wherein the first silicon nitride layer (20), the germanium seed layer (410) and the second silicon nitride layer (510) are sequentially stacked in a direction away from the substrate;
s2, forming a first groove (511) communicated with the germanium seed layer (410) in the second silicon nitride layer (510), and filling a germanium material (420) in the first groove (511) so as to form a ridge waveguide core layer (40) by using the germanium seed layer (410) and the germanium material (420);
and S3, forming a third silicon nitride layer (520) covering the second silicon nitride layer (510) and the ridge waveguide core layer (40), wherein the second silicon nitride layer (510) and the third silicon nitride layer (520) form an upper cladding of the germanium-based optical waveguide, the first silicon nitride layer (20) is a lower cladding of the germanium-based optical waveguide, and the ridge waveguide core layer (40) is positioned between the upper cladding and the lower cladding.
2. The method of claim 1, wherein the step of forming the germanium seed layer (410) comprises:
forming a single crystal germanium layer (411) on a second substrate (30) and bonding said single crystal germanium layer (411) to said first silicon nitride layer (20);
removing the second substrate (30) and etching the single crystal germanium layer (411) to form the germanium seed layer (410).
3. The production method according to claim 2, characterized in that the second substrate (30) is a silicon substrate.
4. The production method according to any one of claims 1 to 3, wherein the thickness of the first silicon nitride layer (20) is 500nm to 1.5 μm.
5. The method of any of claims 1 to 3, wherein the germanium seed layer (410) has a thickness of 40 to 50 nm.
6. The method of manufacturing according to any one of claims 1 to 3, wherein the step of forming the ridge waveguide core layer (40) includes:
epitaxially growing a germanium material (420) on a surface of the germanium seed layer (410) corresponding to the first recess (511);
planarizing the germanium material (420) to obtain the ridge waveguide core layer (40) comprised of the planarized germanium material (420) and the germanium seed layer.
7. The production method according to claim 1, characterized in that the first substrate (10) is a silicon substrate.
8. A germanium-based optical waveguide comprising a first substrate (10), characterized in that the germanium-based optical waveguide further comprises:
a first silicon nitride layer (20) disposed on the first substrate (10), the first silicon nitride layer (20) being a lower cladding of the germanium-based optical waveguide;
the ridge waveguide core layer (40) is arranged on the surface of one side, away from the first substrate (10), of the first silicon nitride layer (20), the ridge waveguide core layer (40) is provided with a plurality of second grooves, and the ridge waveguide core layer (40) is made of germanium;
a second silicon nitride layer (510) disposed in the second recess;
a third silicon nitride layer (520) disposed on a side of the ridge waveguide core layer (40) and the second silicon nitride layer (510) away from the first substrate (10), wherein the third silicon nitride layer (520) and the second silicon nitride layer (510) are connected to form an upper cladding of the germanium-based optical waveguide,
the ridge waveguide core layer (40) comprises a germanium seed layer (410) and a plurality of ridge protrusions with the second groove between adjacent ridge protrusions.
9. The germanium-based optical waveguide of claim 8, wherein the lower cladding layer has a thickness of 500nm to 1.5 μm.
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