CN109725384A - Germanium based optical waveguide and preparation method thereof - Google Patents
Germanium based optical waveguide and preparation method thereof Download PDFInfo
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Abstract
The present invention provides a kind of germanium based optical waveguides and preparation method thereof.The preparation method sequentially forms the first silicon nitride layer, germanium seed layer and the second silicon nitride layer the following steps are included: S1 on the first substrate, and the first silicon nitride layer, germanium seed layer and the second silicon nitride layer are laminated along the direction sequence far from substrate；S2 forms the first groove being connected to germanium seed layer in the second silicon nitride layer, and fills germanium material in the first groove to form ridge waveguide sandwich layer；S3, form the third silicon nitride layer of covering the second silicon nitride layer and ridge waveguide sandwich layer, second silicon nitride layer and third silicon nitride layer constitute the top covering of germanium based optical waveguide, and the first silicon nitride layer is the under-clad layer of germanium based optical waveguide, and ridge waveguide sandwich layer is between top covering and under-clad layer.The transmission region that above structure can be realized germanium-based waveguide extends to 7.5 μm of infrared waves or so, and the operation wavelength of the photon integrated chip with the germanium based optical waveguide is enable to extend to middle infrared band.
Description
Technical field
The present invention relates to photoelectron technology and technical field of optical fiber communication, in particular to a kind of germanium based optical waveguide and
Preparation method.
Background technique
Silicon-based photonics integration receives extensive concern, the development of people due to the compatibility of itself and CMOS technology in recent years
Rapidly.However, for the device of silicon-based photonics integration in the prior art, due to SiO2It is greater than 3.7 μm of light waves for wavelength to absorb
Coefficient can significantly increase, and cause its operation wavelength only near infrared band.
Researchers wish to extend to the operation wavelength of photon integrated chip into middle infrared band with the development of technology, pass
The soi structure of system does not adapt to this demand.
Summary of the invention
The main purpose of the present invention is to provide a kind of germanium based optical waveguides and preparation method thereof, to solve light in the prior art
The operation wavelength of sub- integrated chip is only limited in the problem of near infrared band.
To achieve the goals above, according to an aspect of the invention, there is provided a kind of preparation method of germanium based optical waveguide,
The following steps are included: S1, the first silicon nitride layer, germanium seed layer and the second silicon nitride layer are sequentially formed on the first substrate, first
Silicon nitride layer, germanium seed layer and the second silicon nitride layer are laminated along the direction sequence far from substrate；S2, the shape in the second silicon nitride layer
Germanium material is filled at the first groove being connected to germanium seed layer, and in the first groove, to utilize germanium seed layer and germanium material shape
At ridge waveguide sandwich layer；S3 forms the third silicon nitride layer of covering the second silicon nitride layer and ridge waveguide sandwich layer, the second silicon nitride
Layer constitutes the top covering of germanium based optical waveguide with third silicon nitride layer, and the first silicon nitride layer is the under-clad layer of germanium based optical waveguide, ridged
Waveguide core layer is between top covering and under-clad layer.
Further, the step of forming germanium seed layer includes: that single crystal germanium layer is formed on the second substrate, and by single crystal germanium layer
It is bonded with the first silicon nitride layer；The second substrate is removed, and etches single crystal germanium layer to form germanium seed layer.
Further, the second substrate is silicon substrate.
Further, the first silicon nitride layer with a thickness of 500nm~1.5 μm.
Further, germanium seed layer with a thickness of 40~50nm.
Further, the step of forming ridge waveguide sandwich layer includes: outside germanium seed crystal surface corresponding with the first groove
Prolong growth germanium material；Planarization process is carried out to germanium material, to obtain the ridge that germanium material by planarizing and germanium seed layer are constituted
Shape waveguide core layer.
Further, the first substrate is silicon substrate.
According to another aspect of the present invention, a kind of germanium based optical waveguide, including the first substrate are provided, germanium based optical waveguide is also
Include: the first silicon nitride layer, be set on the first substrate, and the first silicon nitride layer is the under-clad layer of germanium based optical waveguide；Ridged wave
Sandwich layer to be led, a side surface of first silicon nitride layer far from the first substrate is set to, ridge waveguide sandwich layer has multiple second grooves,
And ridge waveguide sandwich layer is prepared by germanium；Second silicon nitride layer is set in the second groove；Third silicon nitride layer, is set to
The side of ridge waveguide sandwich layer and the second silicon nitride layer far from the first substrate, and third silicon nitride layer is connect with the second silicon nitride layer
Constitute the top covering of germanium based optical waveguide.
Further, ridge waveguide sandwich layer includes germanium seed layer and multiple ridged lug bosses, adjacent each ridged lug boss it
Between have the second groove.
Further, under-clad layer with a thickness of 500nm~1.5 μm.
It applies the technical scheme of the present invention, provides a kind of preparation method of germanium based optical waveguide, pass through the preparation method energy
Access germanium-silicon nitride waveguides device, wherein form under-clad layer, sandwich layer and top covering and select SiNx/Ge/SiNx material respectively.It is logical
Cross theory deduction or it is demonstrated experimentally that the transmission region that the structure can be realized germanium-based waveguide extends to 7.5 μm of infrared waves or so,
The operation wavelength of the photon integrated chip with the germanium based optical waveguide is set to extend to middle infrared band, to expand photon
The application field of integrated chip.
Detailed description of the invention
The Figure of description for constituting a part of the invention is used to provide further understanding of the present invention, and of the invention shows
Examples and descriptions thereof are used to explain the present invention for meaning property, does not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is shown in the preparation method of germanium based optical waveguide provided by the application embodiment, is formed on the substrate
Matrix schematic perspective view after first silicon nitride layer；
Fig. 2 shows in the preparation method of germanium based optical waveguide provided by the application embodiment, on the second substrate
Matrix schematic perspective view after forming single crystal germanium layer；
Fig. 3 shows the matrix solid knot after being bonded single crystal germanium layer shown in Fig. 2 with the first silicon nitride layer shown in FIG. 1
Structure schematic diagram；
Fig. 4 shows removal the second substrate shown in Fig. 3 and etches single crystal germanium layer and stood with forming the matrix after germanium seed layer
Body structural schematic diagram；
Fig. 5 shows the matrix schematic perspective view formed after the second silicon nitride layer on germanium seed layer shown in Fig. 4；
Fig. 6 shows the base after the first groove that formation is connected to germanium seed layer in the second silicon nitride layer shown in Fig. 5
Body schematic perspective view；
Fig. 7 shows the base after germanium seed crystal surface epitaxial growth germanium material corresponding with the first groove shown in fig. 6
Body schematic perspective view；
Fig. 8, which is shown, carries out planarization process to germanium material shown in Fig. 7 to obtain the germanium material and germanium seed by planarizing
Matrix schematic perspective view after the ridge waveguide sandwich layer that crystal layer is constituted；
After Fig. 9 shows the third silicon nitride layer to be formed and cover the second silicon nitride layer and ridge waveguide sandwich layer shown in Fig. 7
Matrix schematic perspective view；
Figure 10 shows the schematic diagram of the section structure of germanium based optical waveguide provided by the application embodiment.
Wherein, the above drawings include the following reference numerals:
10, the first substrate；20, the first silicon nitride layer；30, the second substrate；40, ridge waveguide sandwich layer；410, germanium seed layer；
411, single crystal germanium layer；420, germanium material；510, the second silicon nitride layer；511, the first groove；520, third silicon nitride layer.
Specific embodiment
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and embodiments.
In order to enable those skilled in the art to better understand the solution of the present invention, below in conjunction in the embodiment of the present invention
Attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
The embodiment of a part of the invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill people
The model that the present invention protects all should belong in member's every other embodiment obtained without making creative work
It encloses.
It should be noted that description and claims of this specification and term " first " in above-mentioned attached drawing, "
Two " etc. be to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that using in this way
Data be interchangeable under appropriate circumstances, so as to the embodiment of the present invention described herein.In addition, term " includes " and " tool
Have " and their any deformation, it is intended that cover it is non-exclusive include, for example, containing a series of steps or units
Process, method, system, product or equipment those of are not necessarily limited to be clearly listed step or unit, but may include without clear
Other step or units listing to Chu or intrinsic for these process, methods, product or equipment.
As described in background technique, the operation wavelength of photon integrated chip is only limited in near-infrared in the prior art
Wave band.The present inventor studies regarding to the issue above, proposes a kind of preparation method of germanium based optical waveguide, such as Fig. 1
To shown in Fig. 9, comprising the following steps: S1 sequentially forms the first silicon nitride layer 20,410 and of germanium seed layer on the first substrate 10
Second silicon nitride layer 510, the first silicon nitride layer 20, germanium seed layer 410 and the second silicon nitride layer 510 are suitable along the direction far from substrate
Sequence stacking；S2 forms the first groove 511 being connected to germanium seed layer 410 in the second silicon nitride layer 510, and in the first groove
Germanium material 420 is filled in 511, to form ridge waveguide sandwich layer 40 using germanium seed layer 410 and germanium material 420；S3 forms covering
The third silicon nitride layer 520 of second silicon nitride layer 510 and ridge waveguide sandwich layer 40, the second silicon nitride layer 510 and third silicon nitride
Layer 520 constitutes the top covering of germanium based optical waveguide, and the first silicon nitride layer 20 is the under-clad layer of germanium based optical waveguide, ridge waveguide sandwich layer 40
Between top covering and under-clad layer.
Germanium-silicon nitride waveguides device can be obtained by above-mentioned preparation method, wherein form under-clad layer, sandwich layer and top covering
SiNx/Ge/SiNx material is selected respectively.By by theory deduction or it is demonstrated experimentally that the structure can be realized germanium-based waveguide
Transmission region extends to 7.5 μm of infrared waves or so, enables the operation wavelength of the photon integrated chip with the germanium based optical waveguide
Middle infrared band is enough extended to, to expand the application field of photon integrated chip.
The exemplary embodiment party of the preparation method of the germanium based optical waveguide provided according to the present invention is provided
Formula.However, these illustrative embodiments can be implemented by many different forms, and should not be construed to be limited solely to
Embodiments set forth herein.It should be understood that thesing embodiments are provided so that disclosure herein is thorough
And it is complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art.
Firstly, executing step S1: sequentially forming the first silicon nitride layer 20, germanium seed layer 410 and the on the first substrate 10
Nitride silicon layer 510, the first silicon nitride layer 20, germanium seed layer 410 and the second silicon nitride layer 510 are along the direction sequence far from substrate
Stacking, as shown in Figures 1 to 5.
Above-mentioned first substrate 10 may include silicon substrate, silicon-Germanium substrate or silicon-on-insulator substrate SOI, those skilled in the art
Member the type to above-mentioned first substrate 10 can carry out Rational choice according to actual needs.
Those skilled in the art can form above-mentioned first on the first substrate 10 using depositing operations such as LPCVD, PECVD
The process conditions of silicon nitride layer 20, above-mentioned depositing operation can carry out reasonable set according to the type of depositing operation, herein no longer
It repeats.And, it is preferable that above-mentioned first silicon nitride layer 20 with a thickness of 500nm~1.5 μm.According to the refraction between Ge/SiN
Rate is poor, and above-mentioned preferred thickness can effectively be limited in light inside waveguide.
In a preferred embodiment, the step of forming above-mentioned germanium seed layer 410 includes: the shape on the second substrate 30
It is bonded at single crystal germanium layer 411, and by single crystal germanium layer 411 with the first silicon nitride layer 20, as shown in Figures 2 and 3；Remove the second substrate
30, and etch single crystal germanium layer 411 to form germanium seed layer 410, as shown in Figure 4.
In above-mentioned preferred embodiment, the second substrate 30 may include silicon substrate, silicon-Germanium substrate or silicon-on-insulator
Substrate S OI, those skilled in the art the type to above-mentioned second substrate 30 can carry out Rational choice according to actual needs.
Those skilled in the art can be formed on the first substrate 10 above-mentioned using epitaxy technique conventional in the prior art
Single crystal germanium layer 411；Also, those skilled in the art can also realize above-mentioned monocrystalline using conventional in the prior art key and technique
The process conditions of being bonded between germanium layer 411 and the first silicon nitride layer 20, above-mentioned epitaxy technique and bonding technology can also root
The technology category that factually border is chosen carries out reasonable set, and details are not described herein.
In above-mentioned preferred embodiment, the single crystal germanium layer 411 being epitaxially formed has biggish thickness, by the list
Brilliant germanium layer 411 is corroded, and to form relatively thin germanium seed layer 410, as the seed layer of subsequent germanium material deposit, can be improved
The growth efficiency of subsequent germanium material；It is further preferable that above-mentioned germanium seed layer 410 with a thickness of 40~50nm.
After executing the step S1, step S2 is executed: being formed in the second silicon nitride layer 510 and connected with germanium seed layer 410
The first logical groove 511, and germanium material 420 is filled in the first groove 511, to utilize germanium seed layer 410 and 420 shape of germanium material
At ridge waveguide sandwich layer 40, as shown in Figure 6 to 8.
Those skilled in the art can be using photoetching process conventional in the prior art in above-mentioned second silicon nitride layer 510
The first groove 511 is formed, so that first groove 511 is connected to the germanium seed layer 410 being disposed below, those skilled in the art
Reasonable set can be carried out according to processing step and process conditions of the prior art to above-mentioned photoetching process, details are not described herein.
In a preferred embodiment, the step of forming above-mentioned ridge waveguide sandwich layer 40 include: with the first groove
511 corresponding 410 surface epitaxial growth germanium materials 420 of germanium seed layer, as shown in Figure 7；Germanium material 420 is carried out at planarization
Reason, to obtain the ridge waveguide sandwich layer 40 that germanium material 420 by planarizing and germanium seed layer are constituted, as shown in Figure 8.
In above-mentioned preferred embodiment, by 410 surface epitaxial growth germanium material 420 of germanium seed layer, with filling
Above-mentioned first groove 511, the part after epitaxial growth in germanium material 420 can be higher than above-mentioned first groove 511 and be covered in second
The part of the surface of silicon nitride layer 510 removes the germanium material 420 except the first groove 511 by above-mentioned planarization process, thus
Obtain above-mentioned ridge waveguide sandwich layer 40.Above-mentioned planarization process can be chemically mechanical polishing CMP.
After executing the step S2, step S3 is executed: forming the second silicon nitride layer 510 of covering and ridge waveguide sandwich layer 40
Third silicon nitride layer 520, as shown in figure 9, the second silicon nitride layer 510 constitutes germanium based optical waveguide with third silicon nitride layer 520
Top covering, the first silicon nitride layer 20 are the under-clad layer of germanium based optical waveguide, ridge waveguide sandwich layer 40 be located at top covering and under-clad layer it
Between.
Those skilled in the art can form above-mentioned first on the first substrate 10 using depositing operations such as LPCVD, PECVD
The process conditions of silicon nitride layer 20, above-mentioned depositing operation can carry out reasonable set according to the type of depositing operation, herein no longer
It repeats.
According to another aspect of the present invention, a kind of germanium based optical waveguide is additionally provided, as shown in Figure 10, including the first substrate
10, and the germanium based optical waveguide further includes the first silicon nitride layer 20, ridge waveguide sandwich layer 40, the second silicon nitride layer 510 and third nitrogen
SiClx layer 520, the first silicon nitride layer 20 are set on the first substrate 10, and the first silicon nitride layer 20 is the lower packet of germanium based optical waveguide
Layer；Ridge waveguide sandwich layer 40 is set to a side surface of first silicon nitride layer 20 far from the first substrate 10, ridge waveguide sandwich layer 40
With multiple second grooves, and ridge waveguide sandwich layer 40 is prepared by germanium；Second silicon nitride layer 510 is set to the second groove
In；Third silicon nitride layer 520 is set to the side of ridge waveguide sandwich layer 40 and the second silicon nitride layer 510 far from the first substrate 10,
And third silicon nitride layer 520 and the second silicon nitride layer 510 connect and compose the top covering of germanium based optical waveguide.
Since the under-clad layer, sandwich layer and the top covering that are formed in above-mentioned germanium based optical waveguide select SiNx/Ge/SiNx material respectively
Material.By testing surface, the transmission region which may be implemented germanium-based waveguide extends to 7.5 μm of infrared waves or so, makes to have
Middle infrared band can be extended to by having the operation wavelength of the photon integrated chip of the germanium based optical waveguide, to expand integreted phontonics
The application field of chip.
In above-mentioned germanium based optical waveguide of the invention, ridge waveguide sandwich layer 40 includes that germanium seed layer 410 and multiple ridgeds are convex
The portion of rising has above-mentioned second groove as shown in Figure 10 between adjacent each ridged lug boss.
In above-mentioned germanium based optical waveguide of the invention, it is preferable that above-mentioned first silicon nitride layer 20 with a thickness of 500nm~
1.5μm.According to the refringence between Ge/SiN, above-mentioned preferred thickness can be effectively limited in light inside waveguide.
The preparation method of above-mentioned germanium based optical waveguide of the invention is further illustrated below in conjunction with embodiment.
Embodiment 1
The preparation method of germanium based optical waveguide provided in this embodiment the following steps are included:
The first silicon nitride layer that deposition is formed with a thickness of 1000mn on the first substrate；
It is epitaxially formed single crystal germanium layer on the second substrate, and single crystal germanium layer is bonded with the first silicon nitride layer, then etches
The second substrate is removed, and corrodes single crystal germanium layer to form the germanium seed layer with a thickness of 50nm；
Etching forms the first groove being connected to germanium seed layer, and the epitaxial Germanium in the first groove in the second silicon nitride layer
Material is to form ridge waveguide sandwich layer；
Deposition forms the third silicon nitride layer of covering the second silicon nitride layer and ridge waveguide sandwich layer, the second silicon nitride layer and the
Three silicon nitride layers constitute the top covering of germanium based optical waveguide, and the first silicon nitride layer is the under-clad layer of germanium based optical waveguide, with a thickness of
1000nm, ridge waveguide sandwich layer is between top covering and under-clad layer.
By theory analysis it is found that due to all light transmissions at 7.5 μm of two kinds of films of SiN/Ge, the transparency range of SiN is 0.3
~7.5 μm, Ge transparency range is 1.9~18 μm, therefore can derive the light transmission model of the waveguide with SiN/Ge/SiN structure
Can be reached by enclosing by 1.9~7.5 μm.
It can be seen from the above description that the above embodiments of the present invention realized the following chievements:
Germanium-silicon nitride waveguides device can be obtained by above-mentioned preparation method, wherein form under-clad layer, sandwich layer and top covering
SiNx/Ge/SiNx material is selected respectively.By theory deduction or it is demonstrated experimentally that the structure can be realized the light transmission of germanium-based waveguide
Wave band extends to 7.5 μm of infrared waves or so, and the operation wavelength of the photon integrated chip with the germanium based optical waveguide is enable to expand
Zhan Zhizhong infrared band, to expand the application field of photon integrated chip.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of preparation method of germanium based optical waveguide, which comprises the following steps:
S1 sequentially forms the first silicon nitride layer (20), germanium seed layer (410) and the second silicon nitride layer on the first substrate (10)
(510), first silicon nitride layer (20), the germanium seed layer (410) and second silicon nitride layer (510) are along far from described
The direction sequence of substrate is laminated；
S2 forms the first groove (511) being connected to the germanium seed layer (410) in second silicon nitride layer (510), and
Germanium material (420) are filled in first groove (511), to utilize the germanium seed layer (410) and the germanium material (420)
It is formed ridge waveguide sandwich layer (40)；
S3 forms the third silicon nitride layer for covering second silicon nitride layer (510) and the ridge waveguide sandwich layer (40)
(520), second silicon nitride layer (510) and the third silicon nitride layer (520) constitute the top covering of the germanium based optical waveguide,
First silicon nitride layer (20) is the under-clad layer of the germanium based optical waveguide, and the ridge waveguide sandwich layer (40) is located at the upper packet
Between layer and the under-clad layer.
2. preparation method according to claim 1, which is characterized in that the step of forming germanium seed layer (410) include:
It is formed on the second substrate (30) single crystal germanium layer (411), and by the single crystal germanium layer (411) and first silicon nitride layer
(20) it is bonded；
Second substrate (30) is removed, and etches the single crystal germanium layer (411) to form the germanium seed layer (410).
3. preparation method according to claim 2, which is characterized in that second substrate (30) is silicon substrate.
4. preparation method according to any one of claim 1 to 3, which is characterized in that first silicon nitride layer (20)
With a thickness of 500nm~1.5 μm.
5. preparation method according to any one of claim 1 to 3, which is characterized in that the thickness of the germanium seed layer (410)
Degree is 40~50nm.
6. preparation method according to any one of claim 1 to 3, which is characterized in that form the ridge waveguide sandwich layer
(40) the step of includes:
In germanium seed layer (410) the surface epitaxial growth germanium material (420) corresponding with the first groove (511)；
Planarization process is carried out to the germanium material (420), to obtain by the germanium material (420) of the planarization and described
The ridge waveguide sandwich layer (40) that germanium seed layer is constituted.
7. preparation method according to claim 1, which is characterized in that first substrate (10) is silicon substrate.
8. a kind of germanium based optical waveguide, including the first substrate (10), which is characterized in that the germanium based optical waveguide further include:
First silicon nitride layer (20) is set on first substrate (10), and first silicon nitride layer (20) is the germanium
The under-clad layer of based optical waveguide；
Ridge waveguide sandwich layer (40) is set to side table of first silicon nitride layer (20) far from first substrate (10)
Face, the ridge waveguide sandwich layer (40) has multiple second grooves, and the ridge waveguide sandwich layer (40) is prepared by germanium；
Second silicon nitride layer (510) is set in second groove；
Third silicon nitride layer (520) is set to the ridge waveguide sandwich layer (40) and second silicon nitride layer (510) far from institute
The side of the first substrate (10) is stated, and the third silicon nitride layer (520) and second silicon nitride layer (510) connect and compose institute
State the top covering of germanium based optical waveguide.
9. germanium based optical waveguide according to claim 8, which is characterized in that the ridge waveguide sandwich layer (40) includes germanium seed crystal
Layer (410) and multiple ridged lug bosses, with second groove between adjacent each ridged lug boss.
10. germanium based optical waveguide according to claim 8, which is characterized in that the under-clad layer with a thickness of the μ of 500nm~1.5
m。
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