CN109713435B - GaN HEMT millimeter wave reconfigurable antenna and preparation method thereof - Google Patents
GaN HEMT millimeter wave reconfigurable antenna and preparation method thereof Download PDFInfo
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- CN109713435B CN109713435B CN201910131973.1A CN201910131973A CN109713435B CN 109713435 B CN109713435 B CN 109713435B CN 201910131973 A CN201910131973 A CN 201910131973A CN 109713435 B CN109713435 B CN 109713435B
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Abstract
The invention discloses a GaN HEMT millimeter wave reconfigurable antenna and a preparation method thereof, the antenna comprises a substrate, an AlN buffer layer is epitaxially grown on the substrate, a GaN layer is grown on the AlN buffer layer, alGaN layers which are not contacted in the middle are arranged on the left side and the right side of the GaN layer, ohmic contact metal electrodes are arranged on the AlGaN layers on the left side and the right side, the lower surfaces of the ohmic contact metal electrodes are contacted with the GaN layer, metal strips with irregular periodic structures are arranged on the upper surfaces of the AlGaN layers and the upper surfaces of the GaN layers between the two AlGaN layers, the metal strips with the irregular periodic structures form a chirped Bragg grating, and the Bragg grating structures on the upper surfaces of the AlGaN layers on the left side and the right side are connected together through the metal layers to form an integral gate metal layer. The antenna is reconfigurable, simple in working mode and simple in manufacturing process.
Description
Technical Field
The invention relates to the technical field of millimeter wave antennas, in particular to a GaN HEMT millimeter wave reconfigurable antenna and a preparation method thereof.
Background
With the rapid development of modern radar and communication systems, the number of antennas required for aircrafts, ships, satellites, etc. is increasing for the purposes of communication, navigation, guidance, surveillance, weapon seeking, etc. The weight of the load on the platform is increased continuously, the cost required for building the antennas is increased continuously, and meanwhile, the electromagnetic interference among the antennas is very large, so that the normal operation of the antennas is seriously influenced. In order to reduce the weight of the antenna loaded on the platform, reduce the cost, and reduce the radar cross section of the platform to realize good electromagnetic compatibility, it is desirable to realize the functions of multiple antennas by using one antenna. Such antennas are known as reconfigurable antennas by dynamically changing their physical structure or dimensions or their properties to provide a variety of functions.
Millimeter waves refer to a section of electromagnetic waves with the frequency of 26.5GHz-300GHz, and millimeter waves and terahertz waves have wide application prospects in the fields of high-speed wireless communication, radars, human safety detection and the like, and the millimeter wave frequency band signals are transmitted and received without any millimeter wave antennas. At the high end of millimeter waves, for example, the millimeter wave frequency band above 100GHz, namely, the terahertz frequency is the electromagnetic wave of 100GHz-10THz, 1 THz=1000 GHz, and the terahertz overlapping frequency of 100GHz-300GHz has huge potential markets in future communication, imaging, radar and other applications.
Because the frequency of the frequency band is high, the materials, structures, antennas and the like of devices which can work in the frequency band are difficult to realize, and if the antennas with the frequency can be realized and can be reconstructed, the method provides solid technical support for future application of the frequency band.
Disclosure of Invention
The technical problem to be solved by the invention is how to provide the GaN HEMT millimeter wave reconfigurable antenna which is simple in process and reconfigurable in antenna.
In order to solve the technical problems, the invention adopts the following technical scheme: a GaN HEMT millimeter wave reconfigurable antenna is characterized in that: comprises a substrate, an AlN buffer layer epitaxially grown on the substrate, a GaN layer grown on the AlN buffer layer, alGaN layers with non-contact middle arranged on the left and right sides of the GaN layer, ohmic contact metal electrodes arranged on the AlGaN layers on the left and right sides, the lower surfaces of the ohmic contact metal electrodes being in contact with the GaN layer, the upper surface of the AlGaN layer and the upper surface of the GaN layer between the two AlGaN layers are provided with metal strips with irregular periodic structures, the metal strips with the irregular periodic structures form chirped Bragg gratings, and the Bragg grating structures on the upper surfaces of the AlGaN layers on the left side and the right side are connected together through the metal layers to form an integral gate metal layer; through the voltage control between the AlGaN layer and the GaN layer, the concentration of two-dimensional electron gas generated by spontaneous piezoelectric polarization of AlGaN is controlled, so that the antenna works in four states: 1) The antenna radiates leftwards and rightwards along the chirped Bragg grating in a bidirectional manner; 2) The antenna radiates only to the left; 3) The antenna radiates only to the right; 4) The antenna is in an off state.
Preferably, the substrate is a SiC substrate.
The further technical proposal is that: the ohmic contact metal electrode is made of Ti, au, ge, ni and/or Au.
The further technical proposal is that: ti, al, ni and/or Au are used as the manufacturing material of the gate metal layer.
The further technical proposal is that: the antenna works at 100GHz-300GHz, the center frequency of the antenna is 200GHz, the corresponding wavelength is 1.5mm, the distance between metal strips above an AlGaN layer in the antenna is 0.15mm to 1.5mm and gradually changes, and the width of the metal strips is 20 microns.
The further technical proposal is that: the metal strips between the two AlGaN layers are at a fixed interval of 0.15mm, the metal strips on the AlGaN layers on the left side and the right side are at a first interval of 0.15mm, and the second interval is 0.15mm+d; the third pitch is 0.15mm+2d until the taper is 0.15mm+nd=1.5 mm; where d=0.05 mm, and n=27, it is found that 28 metal bars are provided on the AlGaN layers on the left and right sides, respectively.
The invention also discloses a preparation method of the GaN HEMT millimeter wave reconfigurable antenna, which is characterized by comprising the following steps:
an AlN buffer layer is epitaxially grown on a silicon carbide substrate, a GaN layer is grown on the AlN buffer layer, an AlGaN layer is grown on the GaN layer, the AlGaN layer is processed through a semiconductor processing technology, the AlGaN layer is separated into a left part and a right part, the GaN layer between the AlGaN layer is exposed, ohmic contact metal electrode forming holes are respectively formed on the AlGaN layers on the left side and the right side, the GaN layer in the ohmic contact metal electrode forming holes is exposed, metal strips with irregular periodic structures are manufactured on the AlGaN layer between the AlGaN layer and the AlGaN layer through a semiconductor processing method, a chirped Bragg grating is formed, the metal strips on the AlGaN layer are connected together through metal, an integral gate metal layer is formed, the ohmic contact metal electrode is manufactured on the GaN layer through a semiconductor technology, and the concentration of two-dimensional electron gas generated by spontaneous piezoelectric polarization of the AlGaN layer is controlled through voltage control between the AlGaN layer, so that the antenna works in four states: 1) The antenna radiates leftwards and rightwards along the chirped Bragg grating in a bidirectional manner; 2) The antenna radiates only to the left; 3) The antenna radiates only to the right; 4) The antenna is in an off state.
The beneficial effects of adopting above-mentioned technical scheme to produce lie in: the antenna can control the concentration of two-dimensional electron gas generated by spontaneous piezoelectric polarization of AlGaN through voltage control between the AlGaN layer and the GaN layer, and can work in four states: 1) The antenna radiates leftwards and rightwards along the chirped Bragg grating in a bidirectional manner; 2) The antenna radiates only to the left; 3) The antenna radiates only to the right; 4) The antenna is in an off state. The invention has the following advantages: the antenna is reconfigurable and has 4 working states; the working mode is simple, and the back grid voltage is only required to be adjusted; can effectively work at 100GHz-300GHz, and has simple process; by changing the chirped bragg grating structure, the operating frequency can be extended to 1000GHz.
Drawings
The invention will be described in further detail with reference to the drawings and the detailed description.
Fig. 1 is a schematic top view of an antenna according to the present invention;
fig. 2 is a schematic cross-sectional view of an antenna according to the present invention;
wherein: 1. a substrate; 2. an AlN buffer layer; 3. a GaN layer; 4. an AlGaN layer; 5. ohmic contact metal electrodes; 6. a metal strip; 7. and a gate metal layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
As shown in fig. 1-2, the embodiment of the invention discloses a GaN HEMT millimeter wave reconfigurable antenna, which comprises a substrate 1, wherein an AlN buffer layer 2 is epitaxially grown on the substrate 1, and a GaN layer 3 is grown on the AlN buffer layer 2; the left side and the right side of the GaN layer 3 are provided with an AlGaN layer 4 with non-contact middle, ohmic contact metal electrodes 5 are arranged on the AlGaN layers 4 on the left side and the right side, and the lower surfaces of the ohmic contact metal electrodes 5 are in contact with the GaN layer 3; the upper surface of the AlGaN layer 4 and the upper surface of the GaN layer 3 between the two AlGaN layers 4 are provided with metal strips 6 with irregular periodic structures, the metal strips with the irregular periodic structures form chirped Bragg gratings, and the Bragg grating structures on the upper surfaces of the AlGaN layers 4 on the left side and the right side are connected together through the metal layers to form an integral gate metal layer 7; through the voltage control between the AlGaN layer 4 and the GaN layer 3, the concentration of two-dimensional electron gas generated by spontaneous piezoelectric polarization of the AlGaN layer is controlled, so that the antenna works in four states: 1) The antenna radiates leftwards and rightwards along the chirped Bragg grating in a bidirectional manner; 2) The antenna radiates only to the left; 3) The antenna radiates only to the right; 4) The antenna is in an off state.
The substrate 1 may be a silicon carbide substrate, the AlGaN layer has a general Al content of about 30%, and a chirped bragg metal structure is formed above the AlGaN layer to form a gate structure. The metal on the AlGaN layer is Schottky contact, titanium aluminum nickel gold Ti/Al/Ni/Au, the metal on the GaN layer is ohmic contact metal, and titanium aluminum nickel gold Ti/Au/Ge/Ni/Au is adopted.
When the grid structures on the left side and the right side are loaded with negative pressure, as the two-dimensional electron gas in the AlGaN interface layer and the GaN interface layer is dissipated by the negative pressure, the exhausted two-dimensional electron gas does not absorb electromagnetic waves, and the antenna works in a first state, namely, the antenna radiates leftwards and rightwards along the chirped Bragg grating;
when the left grid structure is loaded with negative pressure and the right grid structure is not pressurized, the antenna works in the second state, namely, the antenna radiates leftwards along the chirped Bragg grating because of the negative pressure dissipation of the two-dimensional electron gas in the AlGaN and GaN interface layers on the left side, electromagnetic waves are not absorbed by the left side, and the electromagnetic waves which are transversely propagated are absorbed by the two-dimensional electron gas in the AlGaN and GaN interface layers on the right side, so that the electromagnetic waves cannot be transmitted rightwards;
when the right grid structure is loaded with negative pressure and the left grid structure is not pressurized, the antenna works in a third state, namely the antenna radiates rightwards along the chirped Bragg grating, because the two-dimensional electron gas in the AlGaN and GaN interface layers on the right side dissipates and the electromagnetic wave is not absorbed by the right side;
when the grids at the two sides are not loaded with negative pressure, the antenna works in a fourth state, namely the antenna is in a closed state due to the existence of two-dimensional electron gas in the AlGaN and GaN interface layers;
taking a reconfigurable antenna working at 100GHz-300GHz as an example, the center frequency is 200GHz, the corresponding wavelength is 1.5mm, the distance between metal strips above AlGaN layers in the antenna can be gradually changed from 0.15mm to 1.5mm, the width of the metal strips is 20 micrometers, as shown in figures 1 and 2, the fixed distance between the metal strips of the two AlGaN layers is 0.15mm, and the first distance between the metal strips on the AlGaN layers on the left side and the right side is 0.15mm, and the second distance is 0.15mm+d; the third pitch is 0.15mm+2d until the transition to 0.15mm+nd=1.5 mm, where d=0.05 mm, where n=27 can be found, and it is found that 28 metal strips are provided on the AlGaN layers on the left and right sides, respectively.
Corresponding to the structure, the embodiment of the invention also discloses a preparation method of the GaN HEMT millimeter wave reconfigurable antenna, which comprises the following steps:
an AlN buffer layer 2 is epitaxially grown on a silicon carbide substrate 1, a GaN layer 3 is grown on the AlN buffer layer 2, an AlGaN layer 4 is grown on the GaN layer 3, the AlGaN layer 4 is processed through a semiconductor processing technology, the AlGaN layer 4 is separated into a left part and a right part, the GaN layer 3 between the AlGaN layer 4 is exposed, ohmic contact metal electrode forming holes are respectively formed on the AlGaN layer 4 on the left side and the right side, the GaN layer 3 in the ohmic contact metal electrode forming holes is exposed, metal strips with irregular periodic structures are manufactured on the AlGaN layer 4 and the GaN layer 3 between the AlGaN layer 4 through a semiconductor processing technology, a chirped Bragg grating is formed, the metal strips on the AlGaN layer 4 are connected together through metal, an integral grid metal layer 7 is formed, an ohmic contact metal electrode 5 is manufactured on the GaN layer 3 through a semiconductor technology, and the concentration of two-dimensional electron gas generated by spontaneous piezoelectric polarization of the AlGaN layer 4 is controlled through voltage control between the AlGaN layer 4 and the GaN layer 3, so that the antenna works in four states: 1) The antenna radiates leftwards and rightwards along the chirped Bragg grating in a bidirectional manner; 2) The antenna radiates only to the left; 3) The antenna radiates only to the right; 4) The antenna is in an off state.
Claims (7)
1. A GaN HEMT millimeter wave reconfigurable antenna is characterized in that: the GaN-based light source substrate comprises a substrate (1), an AlN buffer layer (2) is epitaxially grown on the substrate (1), a GaN layer (3) is grown on the AlN buffer layer (2), alGaN layers (4) which are not contacted with each other in the middle are arranged on the left side and the right side of the GaN layer (3), ohmic contact metal electrodes (5) are arranged on the AlGaN layers (4) on the left side and the right side, the lower surfaces of the ohmic contact metal electrodes (5) are in contact with the GaN layers (3), metal strips (6) with irregular periodic structures are arranged on the upper surfaces of the AlGaN layers (4) and the upper surfaces of the GaN layers (3) between the two AlGaN layers (4), the metal strips with the irregular periodic structures form a chirped Bragg grating, and the Bragg grating structures on the upper surfaces of the AlGaN layers (4) on the left side and the right side are connected together through the metal layers to form an integral gate metal layer (7); through the voltage control between the AlGaN layer (4) and the GaN layer (3), the two-dimensional electron gas concentration generated by spontaneous piezoelectric polarization of the AlGaN layer is controlled, so that the antenna works in four states: 1) The antenna radiates leftwards and rightwards along the chirped Bragg grating in a bidirectional manner; 2) The antenna radiates only to the left; 3) The antenna radiates only to the right; 4) The antenna is in an off state.
2. The GaN HEMT millimeter wave reconfigurable antenna of claim 1, wherein: the substrate (1) is a SiC substrate.
3. The GaN HEMT millimeter wave reconfigurable antenna of claim 1, wherein: the ohmic contact metal electrode (5) is made of Ti, au, ge, ni and/or Au.
4. The GaN HEMT millimeter wave reconfigurable antenna of claim 1, wherein: ti, al, ni and/or Au are used as the manufacturing material of the gate metal layer (7).
5. The GaN HEMT millimeter wave reconfigurable antenna of claim 1, wherein: the antenna works at 100GHz-300GHz, the center frequency of the antenna is 200GHz, the corresponding wavelength is 1.5mm, the distance between metal strips above an AlGaN layer in the antenna is 0.15mm to 1.5mm and gradually changes, and the width of each metal strip (6) is 20 microns.
6. The GaN HEMT millimeter wave reconfigurable antenna of claim 5, wherein: the metal strips (6) between the two AlGaN layers (4) are at a fixed interval of 0.15mm, the metal strips (6) on the AlGaN layers (4) on the left side and the right side are at a first interval of 0.15mm, and the second interval is 0.15mm+d; the third pitch is 0.15mm+2d until the taper is 0.15mm+nd=1.5 mm; where d=0.05 mm, and n=27, it is found that 28 metal strips (6) are provided on each of the left and right AlGaN layers (4).
7. The preparation method of the GaN HEMT millimeter wave reconfigurable antenna is characterized by comprising the following steps of:
an AlN buffer layer (2) is epitaxially grown on a silicon carbide substrate (1), then a GaN layer (3) is grown on the AlN buffer layer (2), then an AlGaN layer (4) is grown on the GaN layer (3), the AlGaN layer (4) is processed through a semiconductor processing technology, the AlGaN layer (4) is separated into a left part and a right part, the GaN layer (3) between the AlGaN layer (4) is exposed, ohmic contact metal electrode forming holes are respectively formed on the AlGaN layer (4) on the left side and the right side, the GaN layer (3) in the ohmic contact metal electrode forming holes is exposed, metal strips of an irregular periodic structure are manufactured on the GaN layer (3) between the AlGaN layer (4) and the AlGaN layer (4) through a semiconductor processing method, chirped Bragg gratings are formed, the metal strips on the AlGaN layer (4) are connected together through metal to form an integral gate metal layer (7), the AlGaN layer (3) is manufactured through the technology of a semiconductor, the ohmic contact metal electrode (5) is controlled through voltage between the AlGaN layer (4) and the AlGaN layer (3), the spontaneous polarization state of the piezoelectric antenna is controlled, and the four-dimensional polarization state of the piezoelectric antenna is generated: 1) The antenna radiates leftwards and rightwards along the chirped Bragg grating in a bidirectional manner; 2) The antenna radiates only to the left; 3) The antenna radiates only to the right; 4) The antenna is in an off state.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6313803B1 (en) * | 2000-01-07 | 2001-11-06 | Waveband Corporation | Monolithic millimeter-wave beam-steering antenna |
| JP2012175034A (en) * | 2011-02-24 | 2012-09-10 | Panasonic Corp | Terahertz wave element |
| CN104466617A (en) * | 2013-09-18 | 2015-03-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz light source chip and manufacturing method thereof, terahertz light source device and manufacturing method thereof, and terahertz light source module and manufacturing method thereof |
| US9297638B1 (en) * | 2014-10-21 | 2016-03-29 | Sandia Corporation | Two-path plasmonic interferometer with integrated detector |
| CN106449773A (en) * | 2016-10-11 | 2017-02-22 | 扬州扬杰电子科技股份有限公司 | GaN-based Schottky diode structure and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6304155B2 (en) * | 2015-07-14 | 2018-04-04 | 株式会社デンソー | Nitride semiconductor device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6313803B1 (en) * | 2000-01-07 | 2001-11-06 | Waveband Corporation | Monolithic millimeter-wave beam-steering antenna |
| JP2012175034A (en) * | 2011-02-24 | 2012-09-10 | Panasonic Corp | Terahertz wave element |
| CN104466617A (en) * | 2013-09-18 | 2015-03-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz light source chip and manufacturing method thereof, terahertz light source device and manufacturing method thereof, and terahertz light source module and manufacturing method thereof |
| US9297638B1 (en) * | 2014-10-21 | 2016-03-29 | Sandia Corporation | Two-path plasmonic interferometer with integrated detector |
| CN106449773A (en) * | 2016-10-11 | 2017-02-22 | 扬州扬杰电子科技股份有限公司 | GaN-based Schottky diode structure and manufacturing method thereof |
Non-Patent Citations (2)
| Title |
|---|
| Shubhendu Bhardwaj等.Room temperature detection of plasma resonances using multiple 2DEG channels in HEMT.《2015 IEEE International Symposium on Antennas and Propagation & USNC/URSI National Radio Science Meeting》.2015,全文. * |
| 甘凯仙.石墨烯场效应晶体管太赫兹光电特性研究.《中国优秀硕士学位论文全文数据库 信息科技辑》.2016,全文. * |
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