CN109713412A - Tunable E-plane cutting H-plane waveguide bandpass filter and design method thereof - Google Patents
Tunable E-plane cutting H-plane waveguide bandpass filter and design method thereof Download PDFInfo
- Publication number
- CN109713412A CN109713412A CN201811562282.9A CN201811562282A CN109713412A CN 109713412 A CN109713412 A CN 109713412A CN 201811562282 A CN201811562282 A CN 201811562282A CN 109713412 A CN109713412 A CN 109713412A
- Authority
- CN
- China
- Prior art keywords
- inductance
- diaphragm
- face
- filter
- bandpass filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000013461 design Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 235000013350 formula milk Nutrition 0.000 claims description 38
- 239000003990 capacitor Substances 0.000 claims description 11
- 230000009466 transformation Effects 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 238000003384 imaging method Methods 0.000 abstract description 3
- 238000004891 communication Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 abstract description 2
- 238000012544 monitoring process Methods 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 230000007123 defense Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 14
- 230000005855 radiation Effects 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012937 correction Methods 0.000 description 2
- 238000012938 design process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000011900 installation process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention provides a tunable E-plane cutting H-plane waveguide bandpass filter and a design method thereof, belonging to the technical field of filter design. The method comprises the following steps: starting from a lumped parameter low-pass prototype, establishing a model with a chamfer; deriving a new design formula of the band-pass filter with the chamfer lumped parameter coupling resonator through frequency conversion; these coupling structures and resonators are then realized with microwave structures, resulting in a microwave band-pass filter. The method ensures low loss of the filter and no frequency band shift. Compared with the traditional method, the method overcomes the defects of large error and high loss. The method is widely applied to the fields of short-range air defense, battlefield monitoring, missile guidance, airborne collision avoidance, high-resolution imaging, space target detection, battlefield identification of enemies and relatives, millimeter wave communication and the like.
Description
Technical field
The present invention relates to a kind of tunable face the E cutting face H waveguide bandpass filter and its design methods, belong to filter and set
Count technical field.
Background technique
Various objects in nature all can radiated electromagnetic wave, the theory analysis of millimere-wave band and experiment measurement all show
The ability of different objects radiation millimeter wave has huge difference.Therefore, if the millimeter-wave radiation information of object can be obtained, so that it may
The features such as the shape of the object, volume, distance even material are deduced to a certain extent, this, which identifies target acquisition, draws war matches
It closes, self-navigation is so that anti-stealth technololgy etc. is all significant.Passive millimeter wave imaging technique is to obtain target or scene milli
A kind of means of metric wave radiation image.The millimeter wave energy of scene or target emanation to be imaged is received by antenna, through millimeter wave
Radiometer amplification demodulator obtains video information, which is to reflect the difference of various object radiation millimeter wave abilities, because
And it can discrimination objective.
Compared with conventional radiation meter, synthetic aperture radiometer spatial resolution with higher, at the same time but significantly
The port number of receiver is increased, and the performance of synthetic aperture radiometer additionally depends on the consistency between multiple receiving channels.
Therefore, the parameter consistency for improving each receiving channel just becomes the necessary ways for improving radiometer performance.
Some passive elements in the design and development process of microwave and millimeter wave front end system, still can not be in single MMIC
It is all realized on (Monolithic Microwave Integrated Circuit), is exactly mainly waveguide filter etc..Therefore
Waveguide filter performance is to determine one of the principal element of radiometer performance.
The advantages of waveguide filter is that conductor losses and dielectric loss are small；Power capacity is big；There is no radiation loss；Structure letter
It is single, it is easily fabricated.In millimeter wave and submillimeter wave wave band, keep loss increasing and manufacture tired because the size of metallic waveguide is too small
Difficulty, the waveguide device Exact Design for studying millimeter wave band have great importance with realization.
Waveguide filter is usually located between receiver radiating guide and front ends of millimeter waves circuit, is used as mirror filter
Avoid the generation of mirror image.More solution channel radio frequency/requirements of the microwave/millimeter wave radiation meter systems to receiver consistency, just
Necessarily waveguide filter is put forward higher requirements.And in waveguide filter process, upper and lower ends installation site meeting
There are chamfering, the presence of chamfering certainly will will affect the consistency and precision frequency response performance of waveguide bandpass filter.
Summary of the invention
The present invention in order to solve the processing of existing waveguide bandpass filter be made into present in chamfering lead to the consistent of filter
Property and precision frequency response performance it is insufficient, propose a kind of tunable face the E cutting face H waveguide bandpass filter and its design side
Method, specific:
A kind of the step of design method of the tunable face the E cutting face H waveguide bandpass filter, the design method includes:
Step 1: being formed using the waveguide segment of half waveguide wavelength as the series resonator of H filter with inductance diaphragm
Shunt inductance is as the coupled structure between resonator；
Step 2: low-pass prototype-bandpass filter approximate transform formula is obtained by approximate transform formula computation model,
The approximate transform formula of the prototype-bandpass filter is as follows:
Series inductance LkIt is converted into series LC circuit
Shunt capacitance CkIt is converted into parallel LC circuit
L′kWith C 'kInductance and capacitance after respectively indicating conversion.
Wherein, conversion formula computation model are as follows:
In formula, ω ', ω '1Respectively indicate the sideband frequency of frequency variable and lowpass prototype filter, λg0,λg1,λg2,λgIt is
Respectively with frequencies omega0,ω1,ω2And the corresponding waveguide wavelength of ω, wλIt is relative bandwidth；
Step 3: by resonant element reactance:
It brings into formula (5)-(7),
Obtain waveguide filter impedance transformation for mula (8)-(10):
Wherein, K01Indicate the first rank impedance transformer；RAIndicate terminal impedance on the left of waveguide filter equivalent circuit；X1It indicates
The reactance Slope Parameters of first rank half-wavelength series resonator；Z0Indicate input impedance；g0、g1Respectively indicate source conductivity and first
The capacitor of rank series reactor inductance or the first rank shunt capacitor；gj、gj+1Respectively indicate j rank and j+1 rank series reactor electricity
The capacitor of sense or the first rank shunt capacitor；gn、gn+1Respectively indicate the series reactor inductance or electricity in parallel of N rank and load
The capacitor of container；XnIndicate the reactance of N rank diaphragm；RSIndicate load impedance；KJ, j+1The impedance being expressed as between j and j+1 rank
Converter；KJ, j+1|J=1 → n-1Indicate j from 1 to impedance transformer n-1；KN, n+1Indicate the impedance transformer of last single order；K is
Impedance transformer, g are Chebyshev's lowpass prototype filter parameters；
Step 4: waveguide filter structure equivalent inductance is separated by electrical length θ, wherein including jX in parallel and have point long
Degree is that the impedance transformation of the transmission line of φ is provided by Ralph Levy:
Step 5: inductance diaphragm is equivalent to T-type network structure, the transmission matrix of the T-type network structure are as follows:
It is obtained according to the relation of equality of formula (11) and formula (12):
Step 6: according to formula (14) and (15), and the condition of binding site length φ:
Obtain impedance transformer K, point length φ and the impedance transformer model with chamfering:
Wherein, XSIndicate the reactance parameter generated due to chamfering；XsjIt is the reactance parameter that j rank chamfering generates, i.e. chamfering is electric
It is anti-； Xj,j+1It is expressed as the reactance parameter that chamfering generates between j and j+1 rank resonator；…；
Step 7: the additional inductor that chamfering introduces is merged into shunt inductance two sides, two sides respectively introduce equivalent electrical length and are
φ/2, the then electrical length of practical resonant cavity are as follows:
Wherein, λ0It is waveguide bandpass filter working frequency, LjIt is BPF cavity length, XJ-1, jIt is expressed as j-1 and j rank
The reactance parameter that chamfering generates between resonator；
Step 8: being obtained between cavity length and working frequency according to cavity length and working frequency relational model
Relationship, relationship is as follows between the cavity length and working frequency:
Lj=θjλ0/2π (22)
So far the parameter designing of the filter is completed.
A kind of tunable face the E cutting face H waveguide bandpass filter that the design method is formed, the tunable face E is cut
Cutting the face H waveguide bandpass filter includes the face H waveguide bandpass filter and upper cover: the face H waveguide bandpass filter uses rectangle
Structure；It is equipped with two groups of inductance diaphragms inside the waveguide bandpass filter of the face H, includes two rows of inductance films in every group of inductance diaphragm
Piece；Two groups of inductance diaphragms are distributed in institute as symmetry axis mirror symmetry using the central axes in the waveguide bandpass filter long side of the face H
State the inside of the face H waveguide bandpass filter；Two rows of inductance diaphragms in every group of inductance diaphragm are wide with the face H waveguide bandpass filter
Central axes on side are that symmetry axis mirror symmetry is mounted on the two sides long side side wall of the face H waveguide bandpass filter, and with it is described
Long side side wall is vertical；The diaphragm of every row's inductance diaphragm is of different size, the distance between two neighboring inductance diaphragm difference.
Further, in symmetrical two rows of inductance diaphragms, between corresponding every two inductance diaphragm there are
The air gap；The width of each the air gap is all different.
It further, include 6 inductance diaphragms in two groups of inductance diaphragms, 6 inductance diaphragms are divided into two rows；
In every row's inductance diaphragm, along the both ends of the filter to filter to filter long side centerline direction successively are as follows: first electricity
Feel diaphragm, the second inductance diaphragm and third inductance diaphragm.
Further, width of the width of the first inductance diaphragm less than the second inductance diaphragm；Second inductance diaphragm
Width is less than the width of third inductance diaphragm；The distance between first inductance diaphragm and the second inductance diaphragm are L1；Second inductance
The distance between diaphragm and third inductance diaphragm are L2；
The distance between third inductance diaphragm in two groups of inductance diaphragms is L3, and the size relationship between each distance
Are as follows: L1< L2< L3。
Further, in corresponding two rows of inductance diaphragms, the air gap width between two the first inductance diaphragms is
t1；Air gap width between two the second inductance diaphragms is t2；Air gap width between two third inductance diaphragms is
t3；Wherein, the relationship between each air gap width are as follows: t1> t2> t3。
Further, the bottom end of the inductance diaphragm is fixedly mounted on the bottom surface of the face H waveguide bandpass filter；The electricity
There are chamferings on the top and the edge of bottom end for feeling diaphragm.
The invention has the advantages that:
A kind of tunable face the E cutting face H waveguide bandpass filter of the present invention and its design method solve inductance film
Chamfering bring mismachining tolerance and frequency offset issues caused by right angle between piece and wave-guide cavity wave, in filter processing, there are chamferings
In the case where, guarantee that waveguide bandpass filter has higher consistency and precision frequency response performance.
A kind of tunable face the E cutting face H waveguide bandpass filter of the present invention and its design method give with
The model of the waveguide bandpass filter at angle.
A kind of tunable face the E cutting face H waveguide bandpass filter of the present invention and its design method give with
The new formula of the waveguide bandpass filter at angle.
A kind of tunable face the E cutting face H waveguide bandpass filter of the present invention and its design method give a whole set of
Relevant design process, it is easy to accomplish the Accurate Design of waveguide filter, so that entire design cycle becomes simple smoothness.
A kind of tunable face the E cutting face H waveguide bandpass filter of the present invention and its design method are to a certain extent
The difficult design in millimeter wave and submillimeter wave wave band waveguide filter is reduced, is mainly avoided because of metallic waveguide
Size is too small and makes the problem that loss increases and manufacture is difficult, for studying the waveguide device Exact Design and reality of millimeter wave band
Now have great importance.
Detailed description of the invention
Fig. 1 is that the face H waveguide bandpass filter structural schematic diagram is cut in the tunable face E；
Fig. 2 is the structural schematic diagram of inductance diaphragm；
Fig. 3 is inductance diaphragm equivalent circuit diagram；
Fig. 4 is conduction band bandpass filter shunt inductance element circuit figure；
Fig. 5 is waveguide bandpass filter sectional view；
Fig. 6 is the equivalent circuit diagram of the inductance diaphragm with chamfering；
Fig. 7 is the relational graph of filter practical electrical length and chamfering reactance；
Fig. 8 is frequency displacement with centre frequency Transformation Graphs, wherein (a) indicates waveform diagram when centre frequency 18GHz, (b) indicates
Waveform diagram when centre frequency 26GHz (c) indicates the waveform diagram of centre frequency 34GHz, (d) is the wave of center frequency 42GHz
Shape figure；
Fig. 9 is the Frequency Shift of different center frequency under identical three dB bandwidth, wherein waveform when (a) is BW 2.265%
Figure, (b) be BW 2.5% when waveform diagram, (c) be BW 10% when waveform diagram, (d) be BW 15% when waveform diagram, (e)
Waveform diagram when for BW 20%；
Figure 10 is that BPF installs and tune figure；
Figure 11 is waveguide bandpass filter emulation and test result figure, wherein (a) is that frequency 26GHzBPF frequency in center is rung
It answers；(b) centre frequency 34GHzBPF frequency response.
Figure 12 is the filter pictorial diagram.
Specific embodiment
The present invention will be further described combined with specific embodiments below, but the present invention should not be limited by the examples.
Embodiment 1:
A kind of design method of the tunable face the E cutting face H waveguide bandpass filter, the process of the design method are as follows:
According to microwave filtering network theory, all types of filters, such as maximally-flat type, Chebyshev type, oval letter
The filters such as number type, can be mapped to normalized lowpass prototype filter.The flat mode filter of relative maximum, Chebyshev type
Filter has the advantages that with interior equal ripples.It is general relatively difficult to achieve although elliptic function filter performance is more preferable, so
What is be discussed herein is Chebyshev type bandpass filter.
H filter is to use the waveguide segment of half waveguide wavelength as series resonator, the shunt inductance formed with inductance diaphragm
As the coupled structure between resonator, as shown in Figure 1.
It can be obtained by formula (1)~(3) by low-pass prototype~bandpass filter approximate transform formula, and this kind of filter is only
Propagate quasi- TE10 mould wave.
ω′,ω′1It is the sideband frequency of frequency variable and lowpass prototype filter, λ respectivelyg0,λg1,λg2,λgBe respectively with
Frequencies omega0,ω1,ω2And the corresponding waveguide wavelength of ω, wλIt is relative bandwidth.XjThe reactance of resonant element.Z0It is 50 ohm characteristics
Impedance.
By XjBring (5)~(7) into
It can thus be concluded that waveguide filter impedance transformation for mula (8)~(10)
K is referred to as impedance transformer, and g is Chebyshev's lowpass prototype filter parameter.Waveguide bandpass filter structure is former
Reason figure such as Fig. 4 and Fig. 5 equivalent inductance is separated by length θ.The transmission line for being φ including jX in parallel and with length, resistance
Resistance is changed to be provided by Ralph Levy.
But above design does not account for frequency offset issues brought by chamfering.
When the Accurate Design process of the filter with chamfering is as follows:
The mounting process of waveguide bandpass filter uses left and right two halves internal structure exact same way, slotting in order to analyze
The property for entering inductance diaphragm, its equivalent equal T-types network is as shown in Figure 3.
Its transmission matrix is
(13)~(15) can be obtained according to the relation of equality of formula (11) and (12)
Because of φ very little
In practical integrated inductance diaphragm processing, chamfering unavoidably occurs, shown in sectional view 1.b,t,
LnAnd R is duct width, diaphragm thickness, n-th respectivelythRank cavity length and chamfer radius.Equivalent circuit diagram such as Fig. 3 and Fig. 6
It is shown.Fig. 3 is no chamfering diaphragm isoboles, and Fig. 6 is that have chamfering diaphragm isoboles.XsjIt is the reactance parameter generated due to chamfering,
Now it is referred to as chamfering reactance.Therefore, formula (18)~(20) can be obtained by formula (14), (15).
By Fig. 6, the additional inductor that chamfering introduces is merged into shunt inductance two sides, two sides respectively introduce equivalent electrical length be φ/
2.Therefore the electrical length of practical resonant cavity can be written as
Wherein λ0It is waveguide bandpass filter working frequency, LjIt is BPF cavity length.It is obtained by formula (22), cavity length
It is inversely proportional with working frequency.
Lj=θjλ0/2π (22)
Show that chamfering will lead to the offset of waveguide bandpass filter centre frequency by formula (18)~(22).It is obtained by formula (21)
The relationship of 26GHz waveguide bandpass filter resonant cavity practical electrical length and chamfering reactance with chamfering, as shown in Figure 7.When
Angle reactance XsWhen reduction, the practical electrical length of resonant cavity becomes smaller, and waveguide bandpass filter centre frequency is deviated towards high frequency direction.When
Angle reactance XsWhen increase, the practical electrical length of resonant cavity becomes larger, and waveguide bandpass filter centre frequency is deviated towards low frequency direction.Its etc.
The value for imitating circuit is as shown in table 1.
Each component value in 1 Fig. 6 equivalent circuit diagram of table
The chamfering effect of the 5 rank waveguide bandpass filters with different center frequency and three dB bandwidth is as shown in Figure 8 and Figure 9.
Fig. 8 (a)~(d) show radius of corner be 0.1mm~0.7mm when, have centre frequency 18GHz, 26GHz, 34GHz and
42GHz, frequency shift (FS) increase as bandwidth increases.Fig. 9 (a)~(e) shows with different center frequency 18GHz, 26
GHz, 34GHz and 42GHz, in identical three dB bandwidth, frequency displacement increases with the increase of centre frequency and radius of corner respectively.
These conclusions and formula (17)~(21) are consistent.
The careful design of waveguide bandpass filter is realized using formula after amendment (17)~(21) direct-coupling cavity theory.
5 rank Chebyshev's waveguide bandpass filter filters are designed, centre frequency is respectively 26GHz and 34GHz, and specific size is such as
Shown in table 2.Increased using corrected parameter obtained by revised formula (17)~(21), due to resonant cavity size and resonance
Frequency, which is inversely proportional, sees formula (21), shows that its resonance frequency has low frequency frequency displacement.
Filter size parameter comparison before and after 2 correction formula of table
The 3dB BW for surveying two BPF is respectively 0.65GHz and 0.77GHz, and passband is 0.5GHz, with interior ripple and Insertion Loss
Respectively less than 0.5dB inhibits actual measurement to be greater than 60dB with outer mirror image, and all parameters are all satisfied design requirement.It is calibrated using TRL, in detail
Measured data is shown in Table 3, can realize that Figure 11 is shown in tuning such as Figure 10, frequency response by adjusting t1~t3 during the installation process
(a), (b), it can thus be concluded that having preferable consistency between its emulation and test and test sample.
The BPF test data that table 3 is designed using correction formula
It can thus be concluded that a kind of design and processing technology of new waveguide bandpass filter.This method considers processed
Chamfering and its frequency shift effect in journey, and give modified formula to compensate the frequency displacement of chamfering.From between actual measurement and with emulation number
According to consistency can obtain the validity of this design method, to design there is the waveguide bandpass filter of chamfering to provide theoretical base
Plinth.
Realize that Figure 11 (a), (b) are shown in tuning such as Figure 10, frequency response by adjusting t1~t3 during the installation process, thus
Can obtain between its emulation and test and test sample has preferable consistency.Test is filtered using the waveguide band logical that this method designs
The parameters such as the frequency response of wave device and Insertion Loss, emulation coincide very well with measurement result, have good one between filter of the same race
Cause property.The method for accurately designing of the inventive belt chamfering diaphragm filter after tested, the tuning that can be realized filter and frequency band are not
It shifts.
The present embodiment proposes a kind of essence of the tunable inductance diaphragm waveguide bandpass filter of K-band and the face Ka wave band H
True design method:
(1) from lumped parameter low-pass prototype, the model for having chamfering is established
(2) pass through frequency transformation, the export design formula new with chamfering lumped parameter coupled resonators bandpass filter
(3) these coupled structure resonators are then realized with microwave structure, to obtain microwave band-pass filter
And causes frequency shift (FS) and the face H to cut the cutting of the face E in view of processing generates chamfering in design and cause loss not
Same practical problem, sums up the method for accurately designing with chamfering diaphragm filter, guarantees low-loss and the frequency band of filter
It does not shift.This method is compared compared with conventional method and overcomes error compared with the higher disadvantage of lossy.It is anti-to be widely used in short range
Sky, battlefield monitoring, missile guidance, airborne collision avoidance, high-resolution imaging, Space Object Detection, battlefield enemy and we identification and millimeter
The numerous areas such as wave communication.
Embodiment 2
A kind of tunable face the E cutting face H waveguide bandpass filter that the design method is formed, as shown in Figure 1, described can
Tuning the face the E cutting face H waveguide bandpass filter includes the face H waveguide bandpass filter and upper cover: the face H waveguide bandpass filter
Using rectangular configuration；It is equipped with two groups of inductance diaphragms inside the waveguide bandpass filter of the face H, includes two rows in every group of inductance diaphragm
Inductance diaphragm；Two groups of inductance diaphragms are using the central axes in the waveguide bandpass filter long side of the face H as symmetry axis mirror symmetry point
Cloth is in the inside of the face H waveguide bandpass filter；Two rows of inductance diaphragms in every group of inductance diaphragm are with H surface wave conduction band pass filter
Central axes on device broadside are mounted on the two sides long side side wall of the face H waveguide bandpass filter for symmetry axis mirror symmetry, and with
The long side side wall is vertical；The diaphragm of every row's inductance diaphragm is of different size, the distance between two neighboring inductance diaphragm difference.
Wherein, in symmetrical two rows of inductance diaphragms, there are air between corresponding every two inductance diaphragm
Gap；The width of each the air gap is all different.
It include 6 inductance diaphragms in two groups of inductance diaphragms, 6 inductance diaphragms are divided into two rows；Every row's inductance
In diaphragm, along the both ends of the filter to filter to filter long side centerline direction successively are as follows: the first inductance diaphragm,
Two inductance diaphragms and third inductance diaphragm.
Width of the width of first inductance diaphragm less than the second inductance diaphragm；The width of second inductance diaphragm is less than
The width of three inductance diaphragms；The distance between first inductance diaphragm and the second inductance diaphragm are L1；Second inductance diaphragm and third
The distance between inductance diaphragm is L2；The distance between third inductance diaphragm in two groups of inductance diaphragms is L3, and respectively apart from it
Between size relationship are as follows: L1< L2< L3。
In corresponding two rows inductance diaphragm, the air gap width between two the first inductance diaphragms is t1；Two
Air gap width between two inductance diaphragms is t2；Air gap width between two third inductance diaphragms is t3；Wherein,
Relationship between each air gap width are as follows: t1> t2> t3.It is logical that the bottom end of the inductance diaphragm is fixedly mounted on H surface wave conduction band
On the bottom surface of filter；There are chamferings for the edge of the top of the inductance diaphragm and bottom end.Cut the face H in the tunable face E
The face waveguide bandpass filter E is cut into identical two parts.I.e. filter integrally can be understood as having single inductance diaphragm
Two identical half filter segments are buckled together；And due to closing button mode, make to exist among two rows of inductance diaphragms
The docking wall surface of protrusion.Specific structure is as shown in figure 12.
Although the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the invention, any to be familiar with this
The people of technology can do various changes and modification, therefore protection of the invention without departing from the spirit and scope of the present invention
Range should subject to the definition of the claims.
Claims (7)
1. a kind of design method of the tunable face the E cutting face H waveguide bandpass filter, which is characterized in that the design method
Step includes:
Step 1: using the waveguide segment of half waveguide wavelength as the series resonator of H filter, the parallel connection formed with inductance diaphragm
Inductance is as the coupled structure between resonator；
Step 2: low-pass prototype-bandpass filter approximate transform formula is obtained by approximate transform formula computation model, it is described
Prototype-bandpass filter approximate transform formula is as follows:
Series inductance LkIt is converted into series LC circuit
Shunt capacitance CkIt is converted into parallel LC circuit
L′kAnd Ck' respectively indicate inductance and capacitance after converting；
Wherein, conversion formula computation model are as follows:
In formula, ω ', ω1' respectively indicate the sideband frequency of frequency variable and lowpass prototype filter, λg0,λg1,λg2,λgIt is difference
With frequencies omega0,ω1,ω2And the corresponding waveguide wavelength of ω, wλIt is relative bandwidth；
Step 3: by resonant element reactance:
It brings into formula (5)-(7),
Obtain waveguide filter impedance transformation for mula (8)-(10):
Wherein, K01Indicate the first rank impedance transformer；RAIndicate terminal impedance on the left of waveguide filter equivalent circuit；X1Indicate first
The reactance Slope Parameters of rank half-wavelength series resonator；Z0Indicate input impedance；g0、g1Respectively indicate source conductivity and the first rank string
Join the capacitor of inductor current or the first rank shunt capacitor；gj、gj+1Respectively indicate j rank and j+1 rank series reactor inductance or
The capacitor of first rank shunt capacitor；gn、gn+1Respectively indicate the series reactor inductance or shunt capacitor of N rank and load
Capacitor；XnIndicate the reactance of N rank diaphragm；RSIndicate load impedance；KJ, j+1The impedance transformation being expressed as between j and j+1 rank
Device；KJ, j+1|J=1 → n-1Indicate j from 1 to impedance transformer n-1；KN, n+1Indicate the impedance transformer of last single order；K is impedance
Converter, g are Chebyshev's lowpass prototype filter parameters；
Step 4: waveguide filter structure equivalent inductance is separated by electrical length θ, wherein be including jX in parallel and with point length
The impedance transformation of the transmission line of φ is provided by Ralph Levy:
Step 5: inductance diaphragm is equivalent to T-type network structure, the transmission matrix of the T-type network structure are as follows:
It is obtained according to the relation of equality of formula (11) and formula (12):
Step 6: according to formula (14) and (15), and the condition of binding site length φ:
Obtain impedance transformer K, electrical length φ and the impedance transformer model with chamfering:
Wherein, XSIndicate the reactance parameter generated due to chamfering；XsjIt is the reactance parameter that j rank chamfering generates, i.e. chamfering reactance；
XJ, j+1It is expressed as the reactance parameter that chamfering generates between j and j+1 rank resonator；
Step 7: the additional inductor that chamfering introduces is merged into shunt inductance two sides, it is φ/2 that two sides, which respectively introduce equivalent electrical length,
The then electrical length of practical resonant cavity are as follows:
Wherein, λ0It is waveguide bandpass filter working frequency, LjIt is BPF cavity length, XJ-1, jIt is expressed as j-1 and j rank resonator
Between chamfering generate reactance parameter；
Step 8: obtaining the pass between cavity length and working frequency according to cavity length and working frequency relational model
System, relationship is as follows between the cavity length and working frequency:
Lj=θjλ0/2π (22)
So far the parameter designing of the filter is completed.
2. the face H waveguide bandpass filter is cut in the tunable face E that design method described in a kind of claim 1 is formed, feature exists
In the tunable face the E cutting face the H waveguide bandpass filter includes the face H waveguide bandpass filter: the logical filter of the H surface wave conduction band
Wave device uses rectangular configuration；It is equipped with two groups of inductance diaphragms inside the waveguide bandpass filter of the face H, includes in every group of inductance diaphragm
Two rows of inductance diaphragms；Two groups of inductance diaphragms are using the central axes in the waveguide bandpass filter long side of the face H as symmetry axis mirror image pair
Claim the inside for being distributed in the face H waveguide bandpass filter；Two rows of inductance diaphragms in every group of inductance diaphragm are logical with H surface wave conduction band
Central axes on filter broadside are that symmetry axis mirror symmetry is mounted on the two sides long side side wall of the face H waveguide bandpass filter,
And it is vertical with the long side side wall；The diaphragm of every row's inductance diaphragm is of different size, and the distance between two neighboring inductance diaphragm is no
Together.
3. the face H waveguide bandpass filter is cut in the tunable face E according to claim 2, which is characterized in that symmetrical institute
It states in two rows of inductance diaphragms, there are the air gaps between corresponding every two inductance diaphragm；The width of each the air gap is equal
It is not identical.
4. the face H waveguide bandpass filter is cut in the tunable face E according to claim 2, which is characterized in that two groups of inductance
It include 6 inductance diaphragms in diaphragm, 6 inductance diaphragms are divided into two rows；In every row's inductance diaphragm, along the filter
Both ends to filter to filter long side centerline direction successively are as follows: the first inductance diaphragm, the second inductance diaphragm and third inductance
Diaphragm.
5. the face H waveguide bandpass filter is cut in the tunable face E according to claim 4, which is characterized in that the first inductance diaphragm
Width less than the second inductance diaphragm width；The width of second inductance diaphragm is less than the width of third inductance diaphragm；The
The distance between one inductance diaphragm and the second inductance diaphragm are L1；The distance between second inductance diaphragm and third inductance diaphragm are
L2；The distance between third inductance diaphragm in two groups of inductance diaphragms is L3, and the size relationship between each distance are as follows: L1<
L2< L3。
6. the face H waveguide bandpass filter is cut in the tunable face E according to claim 4, which is characterized in that corresponding two rows
In inductance diaphragm, the air gap width between two the first inductance diaphragms is t1；Air between two the second inductance diaphragms
Gap width is t2；Air gap width between two third inductance diaphragms is t3；Wherein, between each air gap width
Relationship are as follows: t1> t2> t3。
7. the face H waveguide bandpass filter is cut in the tunable face E according to claim 2, which is characterized in that the inductance diaphragm
Bottom end be fixedly mounted on the bottom surface of the face H waveguide bandpass filter；The top of the inductance diaphragm and the edge of bottom end are deposited
In chamfering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811562282.9A CN109713412B (en) | 2018-12-20 | 2018-12-20 | Tunable E-plane cutting H-plane waveguide band-pass filter and design method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811562282.9A CN109713412B (en) | 2018-12-20 | 2018-12-20 | Tunable E-plane cutting H-plane waveguide band-pass filter and design method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109713412A true CN109713412A (en) | 2019-05-03 |
| CN109713412B CN109713412B (en) | 2024-03-29 |
Family
ID=66256083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811562282.9A Active CN109713412B (en) | 2018-12-20 | 2018-12-20 | Tunable E-plane cutting H-plane waveguide band-pass filter and design method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109713412B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111224209A (en) * | 2019-12-08 | 2020-06-02 | 南京航空航天大学 | Waveguide band-pass filter based on waveguide re-cut-off characteristic and design method thereof |
| CN114824707A (en) * | 2022-04-28 | 2022-07-29 | 西南科技大学 | 5G millimeter wave reconfigurable waveguide filter and passband adjusting method thereof |
| CN114927844A (en) * | 2022-07-20 | 2022-08-19 | 南京天朗防务科技有限公司 | Waveguide filter of Ku wave band |
| CN115117580A (en) * | 2022-07-12 | 2022-09-27 | 安徽大学 | High-rectangular-coefficient semi-lumped millimeter wave filter chip based on cross-coupling structure |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1190495A (en) * | 1968-05-23 | 1970-05-06 | Standard Telephones Cables Ltd | Improvements in or relating to Waveguide Filters |
| JPH0832312A (en) * | 1994-07-11 | 1996-02-02 | Nippon Hoso Kyokai <Nhk> | Waveguide branching filter |
| EP1538692A1 (en) * | 2003-12-05 | 2005-06-08 | Alcatel | Rectangular waveguide filter with extracted poles |
| CN201017972Y (en) * | 2007-03-22 | 2008-02-06 | 成都赛纳赛德科技有限公司 | Compact short circuit transmission line waveguide filter |
| CN101546347A (en) * | 2008-09-12 | 2009-09-30 | 西安电子科技大学 | Parameter determination method of rectangular waveguide lowpass |
| US20130154772A1 (en) * | 2010-07-09 | 2013-06-20 | Politecnico Di Milano | Waveguide band-pass filter with pseudo-elliptic response |
| US20130169384A1 (en) * | 2009-12-22 | 2013-07-04 | Thales | Frequency-tunable microwave bandpass filter |
| CN203445217U (en) * | 2013-07-25 | 2014-02-19 | 上海航天测控通信研究所 | Satellite data transmission waveguide combiner |
| JP2016184831A (en) * | 2015-03-25 | 2016-10-20 | 古河電気工業株式会社 | Inductive iris coupled waveguide filter |
| CN205882138U (en) * | 2016-06-27 | 2017-01-11 | 北京航天光华电子技术有限公司 | Ku frequency channel compact waveguide duplexer |
| CN106450749A (en) * | 2016-11-14 | 2017-02-22 | 华南理工大学 | Pyramid horn filtering antenna based on waveguide structure |
| CN106992346A (en) * | 2017-04-07 | 2017-07-28 | 北京理工大学 | A kind of Millimeter Wave Rectangular Wave cavity body filter with dual transfer zero |
-
2018
- 2018-12-20 CN CN201811562282.9A patent/CN109713412B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1190495A (en) * | 1968-05-23 | 1970-05-06 | Standard Telephones Cables Ltd | Improvements in or relating to Waveguide Filters |
| JPH0832312A (en) * | 1994-07-11 | 1996-02-02 | Nippon Hoso Kyokai <Nhk> | Waveguide branching filter |
| EP1538692A1 (en) * | 2003-12-05 | 2005-06-08 | Alcatel | Rectangular waveguide filter with extracted poles |
| CN201017972Y (en) * | 2007-03-22 | 2008-02-06 | 成都赛纳赛德科技有限公司 | Compact short circuit transmission line waveguide filter |
| CN101546347A (en) * | 2008-09-12 | 2009-09-30 | 西安电子科技大学 | Parameter determination method of rectangular waveguide lowpass |
| US20130169384A1 (en) * | 2009-12-22 | 2013-07-04 | Thales | Frequency-tunable microwave bandpass filter |
| US20130154772A1 (en) * | 2010-07-09 | 2013-06-20 | Politecnico Di Milano | Waveguide band-pass filter with pseudo-elliptic response |
| CN203445217U (en) * | 2013-07-25 | 2014-02-19 | 上海航天测控通信研究所 | Satellite data transmission waveguide combiner |
| JP2016184831A (en) * | 2015-03-25 | 2016-10-20 | 古河電気工業株式会社 | Inductive iris coupled waveguide filter |
| CN205882138U (en) * | 2016-06-27 | 2017-01-11 | 北京航天光华电子技术有限公司 | Ku frequency channel compact waveguide duplexer |
| CN106450749A (en) * | 2016-11-14 | 2017-02-22 | 华南理工大学 | Pyramid horn filtering antenna based on waveguide structure |
| CN106992346A (en) * | 2017-04-07 | 2017-07-28 | 北京理工大学 | A kind of Millimeter Wave Rectangular Wave cavity body filter with dual transfer zero |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111224209A (en) * | 2019-12-08 | 2020-06-02 | 南京航空航天大学 | Waveguide band-pass filter based on waveguide re-cut-off characteristic and design method thereof |
| CN114824707A (en) * | 2022-04-28 | 2022-07-29 | 西南科技大学 | 5G millimeter wave reconfigurable waveguide filter and passband adjusting method thereof |
| CN114824707B (en) * | 2022-04-28 | 2023-09-26 | 西南科技大学 | 5G millimeter wave reconfigurable waveguide filter and passband adjusting method thereof |
| CN115117580A (en) * | 2022-07-12 | 2022-09-27 | 安徽大学 | High-rectangular-coefficient semi-lumped millimeter wave filter chip based on cross-coupling structure |
| CN115117580B (en) * | 2022-07-12 | 2024-04-30 | 安徽大学 | High rectangular coefficient semi-lumped millimeter wave filter chip based on cross coupling structure |
| CN114927844A (en) * | 2022-07-20 | 2022-08-19 | 南京天朗防务科技有限公司 | Waveguide filter of Ku wave band |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109713412B (en) | 2024-03-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109713412A (en) | Tunable E-plane cutting H-plane waveguide bandpass filter and design method thereof | |
| Skaik et al. | Synthesis of multiple output coupled resonator circuits using coupling matrix optimisation | |
| US4489293A (en) | Miniature dual-mode, dielectric-loaded cavity filter | |
| Martinez et al. | Compact CPW-fed combline filter in substrate integrated waveguide technology | |
| EP1732158A1 (en) | Microwave filter including an end-wall coupled coaxial resonator | |
| Choi et al. | A V-band planar narrow bandpass filter using a new type integrated waveguide transition | |
| CN108417940B (en) | Multi-port filtering power divider based on dielectric resonator and construction method thereof | |
| Sieganschin et al. | Compact diplexers with folded circular SIW cavity filters | |
| Anwar et al. | Design of S-band combline coaxial cavity bandpass filter | |
| Delmonte et al. | Cavity resonator filters in shielded quarter-mode substrate integrated waveguide technology | |
| López-Oliver et al. | 3-D printed bandpass filter using conical posts interlaced vertically | |
| Miek et al. | Techniques for the generation of multiple additional transmission zeros in H-plane waveguide filters | |
| Bharathi et al. | Design and analysis of interdigital microstrip bandpass filter for centre frequency 2.4 GHz | |
| Yang et al. | The round-ended design and measurement of all symmetric edge-coupled bandpass filter | |
| Alaydrus et al. | Designing cross-coupled bandpass filters with transmission zeros in lossy microstrip | |
| Zhang et al. | Dimensional synthesis of symmetric wideband waveguide cross-coupled filters without global full-wave optimization | |
| CN209374643U (en) | Tunable E-plane cutting H-plane waveguide bandpass filter | |
| Das et al. | Design of a H-Plane Waveguide Narrow Band Pass Filter with Sharp Roll-off at Ka-Band | |
| Ariturk et al. | Element-level microwave filter integration in fully-digital phased array radar systems | |
| Ali et al. | A Compact Second-order Chebyshev Bandpass Filter Using U-shaped Resonator and Defected Ground Structure. | |
| Farahani et al. | Compact Filtering Power Divider with Distributed Combline Coupled-Resonators | |
| Sullca et al. | Design of dual stopband filters for interference suppression | |
| Zhang et al. | Design of 83GHz rectangular waveguide E-plane diaphragm bandpass filter | |
| Yang et al. | Design of H-plane inductance diaphragm waveguide band-pass filter for millimeter imaging frontend | |
| Li et al. | Integration of slot antenna with evanescent-mode filter for tunable front-end applications |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |