CN109713114A - The preparation method of light emitting diode (LED) chip with vertical structure and light emitting diode (LED) chip with vertical structure unit - Google Patents
The preparation method of light emitting diode (LED) chip with vertical structure and light emitting diode (LED) chip with vertical structure unit Download PDFInfo
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- CN109713114A CN109713114A CN201811626990.4A CN201811626990A CN109713114A CN 109713114 A CN109713114 A CN 109713114A CN 201811626990 A CN201811626990 A CN 201811626990A CN 109713114 A CN109713114 A CN 109713114A
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Abstract
The present invention provides the preparation method of a kind of light emitting diode (LED) chip with vertical structure and light emitting diode (LED) chip with vertical structure unit, light emitting diode (LED) chip with vertical structure includes chip unit；Cutting Road, between the adjacent chip unit；And isolation channel, the isolation channel are formed in the Cutting Road, for electrically isolating the chip unit；It is formed with the thermal component of one Yu the adjacent chip unit gap setting in the bottom of the isolation channel, the thermal component surrounds the chip unit, and the thermal component is as sliver channel.The present invention is allowed and is cut in laser sliver along thermal component by the thermal component formed on Cutting Road, influence of the generated temperature to cut place when reducing cutting, bad order when so as to improve LED chip cutting.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing field, in particular to a kind of light emitting diode (LED) chip with vertical structure and vertical junction
The preparation method of structure LED core blade unit.
Background technique
Light emitting diode (Light Emitting Diode, LED) is in response to electric current and is excited, to generate various colors
Light semiconductor devices.Wherein, with gallium nitride (GaN) be representative Group III-V compound semiconductor due to it is wide with band gap,
The features such as luminous efficiency is high, electronics saturation drift velocity is high, chemical property is stablized and in high brightness LED, laser etc.
Field of optoelectronic devices has huge application potential, causes the extensive concern of people.
By taking blue-light LED chip as an example, blue-light LED chip is usually raw using the method for vapor deposition on a sapphire substrate
Long GaN luminescent layer, the size of blue-light LED chip is commonly 2 inches at present, needs to cut chip before the encapsulation of LED terminal applies
It is cut into smaller size of chip unit (die).During production scale expands rapidly, cost constantly reduces, GaN/ is blue precious
Stone LED chip cuts one of the technical problem for always needing to solve, and becomes hinder its production cost to further decrease one
A bottleneck, this is because much harder than compound semiconductor materials such as general GaAs, GaP of GaN/ sapphire, according to
Traditional mechanical system scribing, it will damage is brought to LED chip, to cause low yield rate, low output and at high cost etc. all
More problems.
To solve the above-mentioned problems, current relatively effective method is using laser scribing sliver mode to LED chip
It is cut in front.Compared with traditional mechanical scribing, the scribing speed of laser scribing is greatly improved, and helps to drop
Low cost, still, laser scribing make cut place the trace that appearance is burnt occur due to the difference of heat transfer in cutting, the trace
Mark causes abnormal appearance.
Summary of the invention
The purpose of the present invention is to provide a kind of light emitting diode (LED) chip with vertical structure and preparation method thereof, are cut with improving LED chip
Bad order when cutting.
In order to solve the above technical problems, the present invention provides a kind of light emitting diode (LED) chip with vertical structure, comprising:
Chip unit；
Cutting Road, between the adjacent chip unit；And
Isolation channel, the isolation channel are formed in the Cutting Road, for electrically isolating the adjacent chip unit, in institute
The bottom for stating isolation channel is formed with the thermal component of one Yu the adjacent chip unit gap setting, and the thermal component surrounds institute
Chip unit is stated, and the thermal component is as sliver channel.
Optionally, the thermal component integrally annularly surrounds the chip unit, and the thermal component is positioned at described
The center of isolation channel, the thermal component are more than or equal to 10 μm at a distance from the gap between chip unit, and described scattered
The thickness of thermal part is more than or equal to
Optionally, the chip unit includes conductive substrates, be sequentially located at the conductive substrates side bonding structure and
Metal layer, and P electrode and epitaxial layer on the metal layer, and the N electrode positioned at the conductive substrates other side.
Further, the thermal component and metal layer are formed simultaneously on the bonding structure, and the thermal component and metal layer
Thickness it is identical, material is identical；Alternatively, the thermal component and P electrode are formed simultaneously in the isolation channel, and the heat dissipation
The height of component is less than or equal to the height of the P electrode, material of the material of the thermal component at least partly with the P electrode
Matter is identical.
The present invention also provides a kind of preparation methods of light emitting diode (LED) chip with vertical structure unit, prepare above-mentioned vertical structure LED core
Piece, comprising:
The light emitting diode (LED) chip with vertical structure of one isolation channel to be formed is provided, the light emitting diode (LED) chip with vertical structure include chip unit with
And the Cutting Road between adjacent chips unit；
Isolation channel is formed, the isolation channel is formed on the Cutting Road, described for electrically isolating the chip unit
The thermal component with the adjacent chip unit gap setting is formed in isolation channel；
Sliver technique is executed along the thermal component, to obtain several light emitting diode (LED) chip with vertical structure units.
Optionally, the preparation method of the light emitting diode (LED) chip with vertical structure unit includes:
Growth substrates and conductive substrates are provided, N electrode is formed on the side of the conductive substrates, is formed on the other side
First is bonded minor structure, is formed with epitaxial layer in the growth substrates；
It is formed simultaneously metal layer and thermal component on said epitaxial layer there, and is formed on the metal layer and thermal component
Second bonding minor structure, the thermal component is located at the metal layer side, and the metal layer is located at the chip unit, institute
State Cutting Road of the thermal component between adjacent chips unit；
It is bonded the growth substrates and conductive substrates；
Isolation channel is formed above the thermal component, while forming first groove on the metal layer of part, it is described
Isolation channel is connected to first groove, and the opening of the isolation channel and groove is respectively positioned on one that the conductive substrates form metal layer
Side；
Second groove is formed, the second groove is located at the bottom of the first groove, the second groove expose portion
The metal layer, and P electrode is formed on the metal layer, to form light emitting diode (LED) chip with vertical structure；And
Sliver technique is executed along the thermal component, to obtain several light emitting diode (LED) chip with vertical structure units.
Wherein, metal layer and thermal component are formed simultaneously using vapour deposition method on said epitaxial layer there, and the metal layer and
The thickness of thermal component is identical, and material is identical.
Optionally, the preparation method of the light emitting diode (LED) chip with vertical structure unit includes:
The light emitting diode (LED) chip with vertical structure of one isolation channel to be formed is provided, the light emitting diode (LED) chip with vertical structure include chip unit with
And the Cutting Road between adjacent chips unit；
Isolation channel is formed in the Cutting Road, forms first groove, the isolation channel and the first ditch in the chip unit
Slot connection, and the opening of the isolation channel and groove is respectively positioned on the side that the conductive substrates form metal layer；
Second groove is formed, the second groove is located at the bottom of the first groove, the second groove expose portion
The metal layer；
Thermal component is formed in the isolation channel, while forming P electrode on the metal layer exposed, to be formed
Light emitting diode (LED) chip with vertical structure；And
Sliver technique is executed along the thermal component, to obtain several light emitting diode (LED) chip with vertical structure units.
Wherein, thermal component is formed in the isolation channel using vapour deposition method, while on the metal layer exposed
P electrode is formed, the height of the thermal component is less than or equal to the height of the P electrode, the material of the thermal component at least portion
Divide identical as the material of the P electrode.
Compared with prior art, a kind of light emitting diode (LED) chip with vertical structure and vertical structure LED chip list provided by the present invention
The preparation method of member, the light emitting diode (LED) chip with vertical structure includes chip unit；Cutting Road, between the adjacent chip unit；
And isolation channel, the isolation channel are formed in the Cutting Road, for electrically isolating the chip unit, in the isolation channel
Bottom is formed with the thermal component of one Yu the adjacent chip unit gap setting, and the thermal component surrounds the chip list
Member, and the thermal component allows and is cut in laser sliver along thermal component as sliver channel, to reduce
Influence of the generated temperature to cut place when cutting, bad order when so as to improve LED chip cutting.
Detailed description of the invention
Fig. 1 is the overlooking structure diagram of the light emitting diode (LED) chip with vertical structure of the embodiment of the present invention one；
Fig. 2 is the schematic diagram of the section structure of the light emitting diode (LED) chip with vertical structure of the embodiment of the present invention one；
Fig. 3 is the schematic diagram of the section structure of another light emitting diode (LED) chip with vertical structure of the embodiment of the present invention one；
Fig. 4 is the schematic diagram of the section structure of the light emitting diode (LED) chip with vertical structure of the embodiment of the present invention two.
Description of symbols:
100- chip unit；110- conductive substrates；120- bonding structure；130- metal layer；140-P electrode；150- extension
Layer；160-N electrode；The reflecting layer 170-；180- insulating layer；
200- Cutting Road；210- isolation channel；220- radiator structure.
Specific embodiment
One of core of the invention thought is, provides a kind of light emitting diode (LED) chip with vertical structure, comprising:
Chip unit；
Cutting Road, between the adjacent chip unit；
Isolation channel, the isolation channel are formed in the Cutting Road, for electrically isolating the chip unit, in the isolation
The thermal component of one Yu the adjacent chip unit gap setting are formed in slot, the thermal component surrounds the chip list
Member, and the thermal component is as sliver channel.
Another core concept of the invention is, provides a kind of preparation method of light emitting diode (LED) chip with vertical structure unit, comprising:
The light emitting diode (LED) chip with vertical structure of one isolation channel to be formed is provided, the light emitting diode (LED) chip with vertical structure include chip unit with
And the Cutting Road between adjacent chips unit；
Isolation channel is formed, the isolation channel is formed on the Cutting Road, for electrically isolating the chip unit, and institute
State the thermal component being formed in isolation channel with the adjacent chip unit gap setting；
Sliver technique is executed along the thermal component, to obtain several light emitting diode (LED) chip with vertical structure units.
Below in conjunction with the drawings and specific embodiments to a kind of light emitting diode (LED) chip with vertical structure of the invention and vertical structure LED core
The preparation method of blade unit is further described.According to following description and drawings, advantages and features of the invention will be more clear
Chu, however, it should be noted that, the design of technical solution of the present invention can be implemented in many different forms, it is not limited to
This specific embodiment illustrated.Attached drawing is all made of very simplified form and using non-accurate ratio, only to convenient, bright
The purpose of the embodiment of the present invention is aided in illustrating clearly.
It should be noted that in order to simple, clear, attached drawing in following embodiments is with a chip unit and adjacent
A Cutting Road be example.
Embodiment one
Fig. 1 is the plan structure signal of the light emitting diode (LED) chip with vertical structure of the present embodiment.As shown in Figure 1, the present invention provides one
Kind light emitting diode (LED) chip with vertical structure, including chip unit 100 and Cutting Road 200.
Fig. 2 is the schematic diagram of the section structure of the light emitting diode (LED) chip with vertical structure of the present embodiment.As shown in Fig. 2, please referring to figure simultaneously
1, the chip unit 100 includes: conductive substrates 110, is sequentially located at 120 He of bonding structure of 110 side of conductive substrates
Metal layer 130, P electrode 140 and epitaxial layer 150 on the metal layer 130, and it is located at the conductive substrates 100 separately
The N electrode 160 of side.
Fig. 1 and Fig. 2 are please referred to, the light emitting diode (LED) chip with vertical structure further includes Cutting Road 200, and the Cutting Road 200 is located at phase
Between adjacent chip unit, and the isolation channel 210 is formed in the Cutting Road 200, and the isolation channel 210 is for electrically isolating phase
The adjacent chip unit, and the opening of the isolation channel 210 is located at the side that the conductive substrates 110 form metal layer 130,
Thermal component 220, the thermal component 220 and adjacent institute are formed on the bottom of such as isolation channel 210 in the isolation channel 210
State chip unit gap setting.
In the present embodiment, the isolation channel 210 is formed in the Cutting Road 200.The material of the thermal component 220
The e.g. preferable material of heat-conducting effect, such as metal.The thermal component 220 surrounds the chip unit 100, and described scattered
Thermal part 220 is used as sliver channel.Preferably, the thermal component 220 is whole annularly surrounds the chip unit 100, and
The thermal component 220 is located at the center of the bottom of the isolation channel 210.The thermal component 220 and chip unit 100
Between the distance in gap be more than or equal to 10 μm, and the thickness of the thermal component 220 is more than or equal toThe heat dissipation
Component 220, which can be, to be formed in isolation channel 210 by the technique that thermal component 220 is formed, in laser sliver, reduction is split
Influence of the generated temperature to cut place when piece is also possible in a certain building block (example for forming the chip unit 100
Metal layer in this way or P electrode) when it is formed concurrently so that without increase process flow can reduce it is generated when sliver
Influence of the temperature to cut place.
The a certain building block of the thermal component 220 illustrated below and chip unit 100 is formed simultaneously, such as Fig. 2
Shown, the thermal component 220 can be formed simultaneously in the heat dissipating layer on the bonding structure, preferably with the metal layer 130
, the thickness of the thermal component 220 is identical as the thickness of the metal layer 130, the material of the thermal component 220 with it is described
The material of metal layer 130 is identical, does not increase process flow, has saved processing step, at the same yet form reduce sliver when
The thermal component of influence of the generated temperature to cut place, certainly, the thickness of the thermal component 220 can also be with the gold
The thickness for belonging to layer 130 is different, and the material of the thermal component 220 can also be different from the material of the metal layer 130, only need institute
The thickness for stating thermal component 220 is more than or equal toThe material of the thermal component 220 is that the good material of thermal conductivity is
Can, this is not limited by the present invention.
Fig. 3 is the schematic diagram of the section structure of another light emitting diode (LED) chip with vertical structure of the present embodiment.As shown in figure 3, described dissipate
Thermal part 220, which can also be, to be formed simultaneously with the P electrode 140, and height is less than or equal to the height of the P electrode 140, institute
The material for stating thermal component 220 is at least partly identical as the material of the P electrode 140.Preferably, the thermal component 220
Height is identical as the height of the P electrode 140, and the material of the thermal component 220 is identical as the material of the P electrode 140,
Also without process flow is increased, processing step has been saved, while having yet formed when reducing sliver generated temperature to cutting
The thermal component of the influence at place.Certainly, the thickness of the thermal component 220 can also be different from the thickness of the P electrode 140,
The material of the thermal component 220 can also be different from the material of the P electrode 140, only need the height of the thermal component 220
It is more than or equal toAnd it is less than or equal to the height of the P electrode, the material of the thermal component 220 is the good material of thermal conductivity
Matter, this is not limited by the present invention.
Thermal component described in above-described embodiment and the metal layer are formed simultaneously to prepare vertical structure LED below
The method of chip unit is described in detail.
The present embodiment additionally provides a kind of preparation method of light emitting diode (LED) chip with vertical structure unit, comprising:
Step S11: growth substrates and conductive substrates are provided, are formed with N electrode, the other side on the side of the conductive substrates
On be formed with the first bonding minor structure, be formed with epitaxial layer in the growth substrates；
Step S12: metal layer and thermal component are formed on said epitaxial layer there, and on the metal layer and thermal component
The second bonding minor structure is formed, the thermal component gap is located at the metal layer side, and the metal layer is positioned at described
Chip unit, Cutting Road of the thermal component between adjacent chips unit；
Step S13: the growth substrates and conductive substrates are bonded；
Step S14: isolation channel is formed above the thermal component, while forming the first ditch on the metal layer of part
Slot, the isolation channel are connected to first groove, and the opening of the isolation channel and groove is respectively positioned on the conductive substrates and forms gold
Belong to the side of layer；；
Step S15: forming second groove, and the second groove is located at the bottom of the first groove, the second groove
Metal layer described in expose portion, and P electrode is formed on the metal layer, to form light emitting diode (LED) chip with vertical structure；
Step S16: sliver technique is executed along the thermal component, to obtain several light emitting diode (LED) chip with vertical structure units.
Wherein, metal layer and thermal component are formed simultaneously using vapour deposition method on said epitaxial layer there, the metal layer and dissipated
The thickness of thermal part is identical, and material is identical.
In step S14, the bottom of the isolation channel can expose the thermal component, the bottom of the isolation channel
It can be not exposed from the thermal component, such as there are also an insulating layers between the bottom and the thermal component of the isolation channel
180。
Thermal component described in above-described embodiment and the P electrode are formed simultaneously to prepare vertical junction below in conjunction with Fig. 3
The method of structure LED core blade unit is described in detail.
The present embodiment additionally provides a kind of preparation method of light emitting diode (LED) chip with vertical structure unit, comprising:
Step S21: providing the light emitting diode (LED) chip with vertical structure of an isolation channel to be formed, and the vertical structure LED chip includes
Chip unit and the Cutting Road between adjacent chips unit；
Step S22: forming isolation channel in the Cutting Road, forms first groove, the isolation channel in the chip unit
It is connected to first groove, and the opening of the isolation channel and groove is respectively positioned on the side that the conductive substrates form metal layer；
Step S23: forming second groove, and the second groove is located at the bottom of the first groove, the second groove
Metal layer described in expose portion；
Step S24: forming thermal component in the isolation channel, while P electricity is formed on the metal layer exposed
Pole, to form light emitting diode (LED) chip with vertical structure, the side positioned at the P electrode in the thermal component gap；And
Step S25: sliver technique is executed along the thermal component, to obtain several light emitting diode (LED) chip with vertical structure units.
Wherein, thermal component is formed in the isolation channel using vapour deposition method, using vapour deposition method in the gold exposed
Belong to and form P electrode on layer, the height of the thermal component is less than or equal to the height of the P electrode, the material of the thermal component
It is at least partly identical as the material of the P electrode.In the present embodiment, the height of the thermal component is equal to the P electrode
Highly, the material of the thermal component is identical as the material of the P electrode.
Embodiment two
Fig. 4 is the schematic diagram of the section structure of the light emitting diode (LED) chip with vertical structure of the present embodiment.As shown in figure 4, the present embodiment provides
A kind of light emitting diode (LED) chip with vertical structure, compared with embodiment one, the structure of the chip unit of the present embodiment is different.Specifically, described hang down
Straight structure LED chip includes chip unit 100 and the Cutting Road 200 between adjacent chips unit 100, the Cutting Road
It is formed with isolation channel 210 on 200, is formed with a thermal component 220, the thermal component 220 in the bottom of the isolation channel 210
It is whole annular in shape and surround the chip unit 100, and the thermal component 100 is used as sliver channel.The chip unit
100 include conductive substrates 110, is sequentially located at reflecting layer 170, epitaxial layer 150 and the N electrode of 110 side of conductive substrates
160, the P electrode 140 positioned at 110 other side of conductive substrates.The epitaxial layer 150 is, for example, including p-type GaN layer, volume
Sub- well layer and N-type GaN layer, N-type GaN layer described in the N electrode covering part, the radiator structure 220 be, for example, formed every
It is independently formed from after slot 220 in the center of Cutting Road 200.
The present embodiment additionally provides a kind of preparation method of light emitting diode (LED) chip with vertical structure unit, comprising:
Step S21: providing the light emitting diode (LED) chip with vertical structure of an isolation channel to be formed, and the vertical structure LED chip includes
Chip unit and the Cutting Road between adjacent chips unit；
Step S22: forming isolation channel on the Cutting Road, and one and the adjacent chip are formed in the isolation channel
The thermal component of cell gap setting, the thermal component surround the chip unit；
Step S23: sliver technique is executed along the thermal component, to obtain several light emitting diode (LED) chip with vertical structure units.
Wherein, the thermal component is located at the center of the isolation channel, between the thermal component and chip unit
The distance in gap be more than or equal to 10 μm, and the thickness of the thermal component is more than or equal to
In conclusion the preparation of a kind of light emitting diode (LED) chip with vertical structure provided by the present invention and light emitting diode (LED) chip with vertical structure unit
Method, the light emitting diode (LED) chip with vertical structure include chip unit；Cutting Road, between the adjacent chip unit；And isolation
The Cutting Road that is located at of slot, the isolation channel is formed for electrically isolating the chip unit in the bottom of the isolation channel
There are the thermal component of one Yu the adjacent chip unit gap setting, the thermal component surrounds the chip unit, and described
Thermal component allows and is cut in laser sliver along thermal component as sliver channel, cuts when institute to reduce
Influence of the temperature of generation to cut place, bad order when so as to improve LED chip cutting.
It is understood that although the present invention has been disclosed in the preferred embodiments as above, above-described embodiment not to
Limit the present invention.For any person skilled in the art, without departing from the scope of the technical proposal of the invention,
Many possible changes and modifications all are made to technical solution of the present invention using the technology contents of the disclosure above, or are revised as
With the equivalent embodiment of variation.Therefore, anything that does not depart from the technical scheme of the invention are right according to the technical essence of the invention
Any simple modifications, equivalents, and modifications made for any of the above embodiments still fall within the range of technical solution of the present invention protection
It is interior.
Claims (10)
1. a kind of light emitting diode (LED) chip with vertical structure characterized by comprising
Chip unit；
Cutting Road, between the adjacent chip unit；
Isolation channel, the isolation channel are formed in the Cutting Road, for electrically isolating the adjacent chip unit, it is described every
From the thermal component for being formed with one Yu the adjacent chip unit gap setting in slot, the thermal component surrounds the chip list
Member, and the thermal component is as sliver channel.
2. light emitting diode (LED) chip with vertical structure as described in claim 1, which is characterized in that the whole encirclement annular in shape of the thermal component
The chip unit, and the thermal component is located at the center of the isolation channel, the thermal component and chip unit it
Between the distance in gap be more than or equal to 10 μm, and the thickness of the thermal component is more than or equal to
3. light emitting diode (LED) chip with vertical structure as described in claim 1, which is characterized in that the chip unit includes conductive substrates, according to
Secondary bonding structure and metal layer positioned at the conductive substrates side, and P electrode and epitaxial layer on the metal layer,
And the N electrode positioned at the conductive substrates other side.
4. light emitting diode (LED) chip with vertical structure as claimed in claim 3, which is characterized in that the thermal component and metal layer shape simultaneously
On bonding structure described in Cheng Yu, and the thickness of the thermal component and metal layer, material are all the same.
5. light emitting diode (LED) chip with vertical structure as claimed in claim 3, which is characterized in that the P electrode is formed in the metal layer,
The thermal component is formed in the isolation channel simultaneously, and the height of the thermal component is less than or equal to the height of the P electrode
Degree, the material of the thermal component are at least partly identical as the material of the P electrode.
6. a kind of preparation method of light emitting diode (LED) chip with vertical structure unit, prepares vertical junction according to any one of claims 1 to 5
Structure LED chip characterized by comprising
The light emitting diode (LED) chip with vertical structure of an isolation channel to be formed is provided, the light emitting diode (LED) chip with vertical structure includes chip unit and position
Cutting Road between adjacent chips unit；
Isolation channel is formed, the isolation channel is formed on the Cutting Road, for electrically isolating the chip unit, the isolation
The thermal component with the adjacent chip unit gap setting is formed in slot；
Sliver technique is executed along the thermal component, to obtain several light emitting diode (LED) chip with vertical structure units.
7. the preparation method of light emitting diode (LED) chip with vertical structure unit as claimed in claim 6 characterized by comprising
Growth substrates and conductive substrates are provided, N electrode is formed on the side of the conductive substrates, is formed with first on the other side
It is bonded minor structure, is formed with epitaxial layer in the growth substrates；
It is formed simultaneously metal layer and thermal component on said epitaxial layer there, and forms second on the metal layer and thermal component
It is bonded minor structure, the thermal component gap is located at the metal layer side, and the metal layer is located at the chip unit,
Cutting Road of the thermal component between adjacent chips unit；
It is bonded the growth substrates and conductive substrates；
Isolation channel is formed above the thermal component, while first groove, the isolation are formed on the metal layer of part
Slot is connected to first groove, and the opening of the isolation channel and groove is respectively positioned on the side that the conductive substrates form metal layer；
Second groove is formed, the second groove is located at the bottom of the first groove, described in the second groove expose portion
Metal layer, and P electrode is formed on the metal layer, to form light emitting diode (LED) chip with vertical structure；And
Sliver technique is executed along the thermal component, to obtain several light emitting diode (LED) chip with vertical structure units.
8. preparation method as claimed in claim 7, which is characterized in that be formed simultaneously gold on said epitaxial layer there using vapour deposition method
Belong to layer and thermal component, and the metal layer is identical with the thickness of thermal component, material is identical.
9. the preparation method of light emitting diode (LED) chip with vertical structure unit as claimed in claim 6 characterized by comprising
The light emitting diode (LED) chip with vertical structure of an isolation channel to be formed is provided, the light emitting diode (LED) chip with vertical structure includes chip unit and position
Cutting Road between adjacent chips unit；
Isolation channel is formed in the Cutting Road, forms first groove in the chip unit, the isolation channel and first groove connect
It is logical, and the opening of the isolation channel and groove is respectively positioned on the side that the conductive substrates form metal layer；
Second groove is formed, the second groove is located at the bottom of the first groove, described in the second groove expose portion
Metal layer；
Thermal component is formed in the isolation channel, while forming P electrode on the metal layer exposed, it is vertical to be formed
Structure LED chip, the side positioned at the P electrode in the thermal component gap；And
Sliver technique is executed along the thermal component, to obtain several light emitting diode (LED) chip with vertical structure units.
10. the preparation method of light emitting diode (LED) chip with vertical structure unit as claimed in claim 9, which is characterized in that existed using vapour deposition method
Thermal component is formed in the isolation channel, while P electrode, the height of the thermal component are formed on the metal layer exposed
Degree is less than or equal to the height of the P electrode, and the material of the thermal component is at least partly identical as the material of the P electrode.
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