CN109713051A - A kind of photovoltaic cell contact structures and manufacturing method - Google Patents
A kind of photovoltaic cell contact structures and manufacturing method Download PDFInfo
- Publication number
- CN109713051A CN109713051A CN201811603014.7A CN201811603014A CN109713051A CN 109713051 A CN109713051 A CN 109713051A CN 201811603014 A CN201811603014 A CN 201811603014A CN 109713051 A CN109713051 A CN 109713051A
- Authority
- CN
- China
- Prior art keywords
- burn
- resistance
- layer
- photovoltaic cell
- pulp layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of photovoltaic cell contact structures and manufacturing methods, wherein photovoltaic cell contact structures and manufacturing method include: step 1, positive burn-through resistance pulp layer is printed on the front passivation layer of wafer bulk, the main part that passivation layer and silicon wafer are passed through at the predetermined point position of positive burn-through resistance pulp layer connects；Step 2, in the non-burn-through resistance pulp layer in surface printing front of positive burn-through resistance pulp layer；Step 3, wafer bulk is sintered.It is connected by using the main part for passing through passivation layer and silicon wafer at the predetermined point position of positive burn-through resistance pulp layer, so that the line formed after the printing of existing slurry is contacted metal-semiconductor structure, change into the metal-semiconductor structure of point contact, contact area is small, low damage metal contact structure is realized, while the double-deck grout structure guarantees contact resistance, it is compound low, it is smaller for the destruction of wafer bulk, the performance of monocrystalline silicon or polysilicon can be given full play to, the efficiency of battery is improved.
Description
Technical field
The present invention relates to solar cell preparation technologies, more particularly to a kind of photovoltaic cell contact structures and system
Make method.
Background technique
Due to solar battery manufacturing cost with the continuous progress of technology, a sharp decline has been obtained, so that too
It is positive can gap between battery and the cost of traditional energy power generation it is smaller and smaller, the power generation process of requirement in to(for) place compared with
It is low, generation it is of reduced contamination, to have been widely used.
Two factors for influencing solar battery at present are to propose effect and drop originally, and silk-screen printing is as manufacture of solar cells mistake
A procedure in journey, the strong influence efficiency of solar battery, therefore the quality for improving printing is necessary.
Traditional printing slurry forms line contact type metal-semiconductor structure after oversintering, and this contact mode connects
Contacting surface is big, compound serious, is unfavorable for the promotion of efficiency.
Summary of the invention
The object of the present invention is to provide a kind of photovoltaic cell contact structures manufacturing methods, and reduction is compound, improve battery
Efficiency.
In order to solve the above technical problems, the embodiment of the invention provides a kind of photovoltaic cell contact structures manufacturing method, packet
It includes:
Step 1, positive burn-through resistance pulp layer, the front burn-through resistance slurry are printed on the front passivation layer of wafer bulk
The passivation layer is passed through at the predetermined point position of layer to connect with the wafer bulk；
Step 2, in the non-burn-through resistance pulp layer in surface printing front of the positive burn-through resistance pulp layer；
Step 3, the wafer bulk is sintered.
Wherein, the positive burn-through resistance slurry with a thickness of 80nm~100nm.
Wherein, before the step 1, further includes:
In the back up back pastes layer of the wafer bulk.
Wherein, the positive burn-through resistance pulp layer with a thickness of 6 μm~10 μm.
Wherein, the positive burn-through resistance pulp layer, the non-burn-through resistance pulp layer in the front are the silver paste bed of material.
Wherein, the back pastes layer is Ag/Al pulp layer.
Wherein, the back pastes layer with a thickness of 10 μm~20 μm.
In addition to this, the embodiment of the invention also provides a kind of photovoltaic cell contact structures, including wafer bulk just
The front passivation layer that sets gradually upwardly, positive burn-through resistance pulp layer, the non-burn-through resistance pulp layer in front and in the silicon wafer
The back side of main body successively down-set backside passivation layer, back pastes layer, the predetermined point of the front burn-through resistance pulp layer
It sets place and is connect across the front passivation layer with the wafer bulk.
Wherein, the positive burn-through resistance slurry with a thickness of 80nm~100nm.
Wherein, the positive burn-through resistance pulp layer, the non-burn-through resistance pulp layer in the front are silver paste bed of material s.
Photovoltaic cell contact structures manufacturing method provided by the embodiment of the present invention has following compared with prior art
Advantage:
The photovoltaic cell contact structures manufacturing method is worn at the predetermined point position by using positive burn-through resistance pulp layer
The main part of transpassivation layer and silicon wafer connection, so that the line formed after the printing of existing slurry is contacted metal-semiconductor junction
Structure changes into the metal-semiconductor structure of point contact, and contact area is small, realizes low damage metal contact structure, the double-deck slurry knot
It is compound low while structure guarantees contact resistance, it is smaller for the destruction of wafer bulk, monocrystalline silicon or polysilicon can be given full play to
Performance, improve the efficiency of battery.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is a kind of step of specific embodiment of photovoltaic cell contact structures manufacturing method provided in an embodiment of the present invention
Rapid flow diagram；
Fig. 2 is a kind of structural representation of specific embodiment of photovoltaic cell contact structures provided in an embodiment of the present invention
Figure.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
FIG. 1 to FIG. 2 is please referred to, Fig. 1 is one kind of photovoltaic cell contact structures manufacturing method provided in an embodiment of the present invention
The step flow diagram of specific embodiment；Fig. 2 is a kind of tool of photovoltaic cell contact structures provided in an embodiment of the present invention
The structural schematic diagram of body embodiment.
In a specific embodiment, the photovoltaic cell contact structures manufacturing method, comprising:
Step 1, positive burn-through resistance pulp layer, the front burn-through resistance slurry are printed on the front passivation layer of wafer bulk
The passivation layer is passed through at the predetermined point position of layer to connect with the wafer bulk；
Step 2, in the non-burn-through resistance pulp layer in surface printing front of the positive burn-through resistance pulp layer；
Step 3, the wafer bulk is sintered.
Photovoltaic cell contact structures manufacturing method in the present invention, by using the predetermined point of positive burn-through resistance pulp layer
It sets place to connect across the main part of passivation layer and silicon wafer, so that the line contact metal-half that will be formed after the printing of existing slurry
Conductor structure changes into the metal-semiconductor structure of point contact, and contact area is small, realizes low damage metal contact structure, double-deck
Grout structure guarantee contact resistance while, it is compound low, it is smaller for the destruction of wafer bulk, can give full play to monocrystalline silicon or
The performance of polysilicon improves the efficiency of battery.
Photovoltaic cell contact structures manufacturing method in the present invention is printed front on the front passivation layer of wafer bulk and is burnt
When wearing property pulp layer, it is only necessary in the extreme temperatures of the silk screen of specific printing points, front passivation layer can be burnt, so that silk
Online slurry passes through front passivation layer and connect with wafer bulk.
The present invention is not specifically limited for printing the temperature of positive burn-through resistance pulp layer, for printing positive burn-through resistance slurry
The thickness and material of the bed of material are not specifically limited.
The general positive burn-through resistance slurry with a thickness of 80nm~100nm.
For the front passivation layer of wafer bulk and the material and thickness of backside passivation layer, implementing process in the present invention
Etc. being not specifically limited, silicon nitride passivation is generally used.
Due to needing to require production electrode contact structure in the front and back of wafer bulk, generally in the step
Before rapid 1, further includes:
In the back up back pastes layer of the wafer bulk.
It should be pointed out that carrying out positive burn-through resistance slurry printing, the non-burn-through resistance slurry printing in front and carrying out back side slurry
Material prints uninevitable sequencing, can be and first carries out positive positive burn-through resistance slurry printing, the non-burn-through resistance in front is starched
Material printing, then the back pastes layer at the back side is carried out, it can also be the printing for first carrying out back pastes layer, then carry out positive front
The printing of burn-through resistance slurry, front non-burn-through resistance slurry printing, the present invention to its sequencing and specific thickness without limitation.
Generally, the positive burn-through resistance pulp layer with a thickness of 6 μm~10 μm.
Preferably, the positive burn-through resistance pulp layer, the non-burn-through resistance pulp layer in the front are the silver paste bed of material.
Likewise, the back pastes layer is generally Ag/Al pulp layer, the identical technique with front can choose,
Can choose existing technique, the present invention to it without limitation.
The general back pastes layer with a thickness of 10 μm~20 μm.
The photovoltaic cell contact structures of photovoltaic cell contact structures manufacturing method manufacture in the present invention, compared to traditional
Line contact type structure can preferably reduce contact area using point contact type structure, and reduction is compound, to promote open-circuit voltage
VOCWith fill factor FF, the performance of battery is improved.On the other hand, the method is compatible with traditional track, only needs to change halftone
With slurry, without other investments, increased cost is very limited, without being adjusted on a large scale to traditional production technology
It is whole.
In addition to this, the embodiment of the invention also provides a kind of photovoltaic cell contact structures, including in wafer bulk 10
Face up the front passivation layer 20 set gradually, positive burn-through resistance pulp layer 30, the non-burn-through resistance pulp layer 40 in front and
The back side of the wafer bulk 10 successively down-set backside passivation layer 50, back pastes layer 60, the front burn-through resistance slurry
The front passivation layer 20 is passed through at the predetermined point position of the bed of material 30 to connect with the wafer bulk 10.
Due to the photovoltaic cell contact structures, using above-mentioned photovoltaic cell contact structures production method, thus have
Identical friendship effect, details are not described herein by the present invention.
Photovoltaic cell contact structures in the present invention, compared to traditional line contact type structure, using point contact type structure
Contact area can be preferably reduced, reduction is compound, to promote open-circuit voltage VOCWith fill factor FF, the property of battery is improved
Energy.On the other hand, the method is compatible with traditional track, only needs to change halftone and slurry, without other investments, increases
Cost it is very limited, without being adjusted on a large scale to traditional production technology.
The present invention for positive burn-through resistance pulp layer technique and thickness and material without limitation, the general front is burnt
Wearing property slurry 30 with a thickness of 80nm~100nm.
Generally, the positive burn-through resistance pulp layer 30, the non-burn-through resistance pulp layer 40 in the front are the silver paste bed of material.The present invention
In for the front passivation layer 20 of wafer bulk and the material of backside passivation layer 50 and thickness without limitation, it is general using nitridation
Silicon passivation layer.
In conclusion photovoltaic cell contact structures provided in an embodiment of the present invention and manufacturing method, by using front
The main part that passivation layer and silicon wafer are passed through at the predetermined point position of burn-through resistance pulp layer connects, so that existing slurry is printed
The line contact metal-semiconductor structure formed afterwards, changes into the metal-semiconductor structure of point contact, contact area is small, realizes low
Damage metal contact structure, it is compound low while double-deck grout structure guarantees contact resistance, for wafer bulk destruction more
It is small, the performance of monocrystalline silicon or polysilicon can be given full play to, the efficiency of battery is improved.
Photovoltaic cell contact structures manufacturing method provided by the present invention is described in detail above.It is used herein
A specific example illustrates the principle and implementation of the invention, and the above embodiments are only used to help understand
Method and its core concept of the invention.It should be pointed out that for those skilled in the art, not departing from this
, can be with several improvements and modifications are made to the present invention under the premise of inventive principle, these improvement and modification also fall into the present invention
In scope of protection of the claims.
Claims (10)
1. a kind of photovoltaic cell contact structures manufacturing method characterized by comprising
Step 1, positive burn-through resistance pulp layer is printed on the front passivation layer of wafer bulk, the front burn-through resistance pulp layer
The passivation layer is passed through at predetermined point position to connect with the wafer bulk；
Step 2, in the non-burn-through resistance pulp layer in surface printing front of the positive burn-through resistance pulp layer；
Step 3, the wafer bulk is sintered.
2. photovoltaic cell contact structures manufacturing method as described in claim 1, which is characterized in that the front burn-through resistance slurry
With a thickness of 80nm~100nm.
3. photovoltaic cell contact structures manufacturing method as claimed in claim 2, which is characterized in that before the step 1, also wrap
It includes:
In the back up back pastes layer of the wafer bulk.
4. photovoltaic cell contact structures manufacturing method as claimed in claim 3, which is characterized in that the front burn-through resistance pulp layer
With a thickness of 6 μm~10 μm.
5. photovoltaic cell contact structures manufacturing method as claimed in claim 4, which is characterized in that the front burn-through resistance slurry
Layer, the non-burn-through resistance pulp layer in the front are the silver paste bed of material.
6. photovoltaic cell contact structures manufacturing method as claimed in claim 5, which is characterized in that the back pastes layer is Ag/
Al pulp layer.
7. photovoltaic cell contact structures manufacturing method as claimed in claim 6, which is characterized in that the thickness of the back pastes layer
It is 10 μm~20 μm.
8. a kind of photovoltaic cell contact structures, which is characterized in that including in the front set gradually that faces up of wafer bulk
Passivation layer, positive burn-through resistance pulp layer, the non-burn-through resistance pulp layer in front and at the back side of the wafer bulk successively to dividing into
The backside passivation layer set, back pastes layer pass through the front passivation at the predetermined point position of the front burn-through resistance pulp layer
Layer is connect with the wafer bulk.
9. photovoltaic cell contact structures as claimed in claim 8, which is characterized in that the front burn-through resistance slurry with a thickness of
80nm~100nm.
10. photovoltaic cell contact structures as claimed in claim 9, which is characterized in that the front burn-through resistance pulp layer, it is described just
The non-burn-through resistance pulp layer in face is the silver paste bed of material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811603014.7A CN109713051A (en) | 2018-12-26 | 2018-12-26 | A kind of photovoltaic cell contact structures and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811603014.7A CN109713051A (en) | 2018-12-26 | 2018-12-26 | A kind of photovoltaic cell contact structures and manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109713051A true CN109713051A (en) | 2019-05-03 |
Family
ID=66258512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811603014.7A Pending CN109713051A (en) | 2018-12-26 | 2018-12-26 | A kind of photovoltaic cell contact structures and manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109713051A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113793877B (en) * | 2021-09-29 | 2023-05-05 | 上饶捷泰新能源科技有限公司 | Photovoltaic cell and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011020124A2 (en) * | 2009-08-14 | 2011-02-17 | Gigasi Solar, Inc. | Backside only contact thin-film solar cells and devices, systems and methods of fabricating same, and products produced by processes thereof |
| CN203312310U (en) * | 2013-06-04 | 2013-11-27 | 泰通(泰州)工业有限公司 | Solar cell sheet |
| CN103703568A (en) * | 2011-06-17 | 2014-04-02 | 荷兰能源研究中心基金会 | Photovoltaic cell and method of manufaturing such a cell |
| CN104518036A (en) * | 2013-10-08 | 2015-04-15 | E.I.内穆尔杜邦公司 | Solar cell and manufacturing method of same |
-
2018
- 2018-12-26 CN CN201811603014.7A patent/CN109713051A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011020124A2 (en) * | 2009-08-14 | 2011-02-17 | Gigasi Solar, Inc. | Backside only contact thin-film solar cells and devices, systems and methods of fabricating same, and products produced by processes thereof |
| CN103703568A (en) * | 2011-06-17 | 2014-04-02 | 荷兰能源研究中心基金会 | Photovoltaic cell and method of manufaturing such a cell |
| CN203312310U (en) * | 2013-06-04 | 2013-11-27 | 泰通(泰州)工业有限公司 | Solar cell sheet |
| CN104518036A (en) * | 2013-10-08 | 2015-04-15 | E.I.内穆尔杜邦公司 | Solar cell and manufacturing method of same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113793877B (en) * | 2021-09-29 | 2023-05-05 | 上饶捷泰新能源科技有限公司 | Photovoltaic cell and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106409929B (en) | Main-grid-free full back contact solar cell module | |
| EP1870942B1 (en) | Solar cell | |
| CN102800712B (en) | A kind of solar battery sheet electrode structure at right side and preparation method thereof | |
| CN109244194A (en) | A kind of preparation method of low cost p-type all back-contact electrodes crystal silicon solar battery | |
| CN107342332A (en) | Two-sided POLO batteries and preparation method thereof | |
| CN103594529A (en) | MWT and passivation combined crystal silicon solar cell and manufacturing method thereof | |
| CN109888045B (en) | Novel double-sided PERC (PERC) laminated tile battery piece and preparation method thereof | |
| CN104064609A (en) | Back contact solar cell component and preparation method thereof | |
| CN209561421U (en) | A kind of p-type tunneling oxide passivation contact solar cell | |
| CN108666386A (en) | A kind of p-type back contacts solar cell and preparation method thereof | |
| WO2021013275A2 (en) | Shingled assembly, solar cell pieces, and manufacturing method for shingled assembly | |
| CN209056507U (en) | A kind of MWT hetero-junction silicon solar cell | |
| CN102683437A (en) | Solar cell electrode structure and solar cell series connection method | |
| CN105702755B (en) | A kind of front electrode of crystal silicon solar batteries | |
| KR20190010644A (en) | Manufacturing method of solar cell and solar cell | |
| CN109713051A (en) | A kind of photovoltaic cell contact structures and manufacturing method | |
| CN103219430B (en) | A kind of segmented mask pattern prepares SE battery methods | |
| JPWO2017051482A1 (en) | Solar cell manufacturing method and solar cell | |
| US20190363203A1 (en) | Double Printing Method and Screen Stencil for Improving the Tensile Force of the Electrode of Solar Panel | |
| CN110364589A (en) | Method and solar battery sheet of the preparation for the solar battery sheet of imbrication component | |
| CN108054219A (en) | A kind of p-type solar cell and preparation method thereof | |
| JP2000164901A (en) | Solar battery | |
| CN208352305U (en) | A kind of p-type back contacts solar cell | |
| CN107275418A (en) | One side POLO batteries and preparation method thereof | |
| CN206460963U (en) | IBC cell electrode structures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190503 |