CN109712903B - Dynamic adjusting structure and testing method for electron beam aperture of electron beam scanning machine - Google Patents
Dynamic adjusting structure and testing method for electron beam aperture of electron beam scanning machine Download PDFInfo
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- CN109712903B CN109712903B CN201811607200.8A CN201811607200A CN109712903B CN 109712903 B CN109712903 B CN 109712903B CN 201811607200 A CN201811607200 A CN 201811607200A CN 109712903 B CN109712903 B CN 109712903B
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Abstract
The invention discloses an electron beam aperture dynamic adjusting structure of an electron beam scanning machine, which is used for scanning defects of a wafer and comprises a plurality of arc-shaped blocking pieces which are enclosed into a circle, wherein an aperture for an electron beam to pass through is formed in the center, and the aperture in the center can be subjected to size stepless adjustment. The test method of the electron beam aperture dynamic adjustment structure of the electron beam scanning machine comprises the steps that a scanning program is arranged in the machine, and before formal scanning, the best scanning condition is found by pre-scanning a specific area of a wafer so as to achieve the best scanning effect, form standard image data and record the resolution of the standard image data; and then starting a scanning program, loading the wafer into a machine, operating a pre-scanning program, obtaining the resolution in a preset area, comparing the resolution with the resolution of the standard image data, and automatically adjusting the aperture size of the electron beam by the machine until the resolution is close to the resolution of the standard image data when a certain deviation occurs, thereby realizing dynamic adjustment of the resolution.
Description
Technical Field
The invention relates to the field of semiconductor device manufacturing, in particular to an electron beam aperture dynamic adjusting structure of an electron beam scanning machine.
The invention also relates to a test method for testing by utilizing the electron beam aperture dynamic adjustment structure of the electron beam scanning machine.
Background
As integrated circuit processes have evolved and critical dimensions have scaled down, semiconductor processes have become more complex and defect detection has become more difficult and complex. In the prior art, when a defect sample is manufactured, a defect scanning machine is generally used to scan the defects of a wafer to obtain a wafer defect scanning image, the wafer defect scanning image can show the defects existing on the surface of the wafer and the appearance of the surface of the wafer, then the wafer is loaded into a sample manufacturing machine, the sample manufacturing machine displays the wafer appearance image of the whole surface of the wafer, the positions of the defects are found and recorded in the wafer surface appearance image by combining the existing wafer defect scanning image and the wafer surface appearance image displayed by the sample manufacturing machine to realize the positioning of the defects, and the wafer is cut by a focused ion beam according to the recorded defect positions to manufacture the sample containing the defects.
The E-Beam defect inspection machine has a wide application range, can find a process window in a research and development stage, and can assist engineers in finding system problems and adjusting the process window in time in the mass production process.
The electron beam through hole selection method of the conventional electron beam scanner is shown in fig. 1, in which an electron beam passes through a hardware physical aperture component with a selected fixed aperture to form an image. When a certain aperture is needed, corresponding through hole components are selected, in the figure, the components with different aperture sizes of examples 1-6, and actually more components are possible to adapt to more requirements. When more beams are required, parts with larger apertures may be selected, such as part number 1, and when fewer beams are required, parts with relatively smaller drops are selected, such as parts number 5, 6. Because the fixed aperture is preset and the aperture between each part can not be steplessly adjusted, the method is inconvenient in practical use, for example, the 3 and 4 parts are adjacent two parts, but the problem that the aperture of the 3 part is too large and the aperture of the 4 part is too small can occur, and the optimal effect can not be achieved frequently.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a dynamic adjustment method for the electron beam aperture of an electron beam scanning machine, which achieves the purpose of dynamically adjusting the aperture size by changing the electron beam aperture device and adding a pre-scanning method.
The invention also provides a testing method for testing by using the electron beam aperture dynamic adjustment structure of the electron beam scanning machine.
In order to solve the above problems, the present invention provides an electron beam aperture dynamic adjustment structure for an electron beam scanning machine, which scans defects of a wafer, and the electron beam aperture adjustment structure for the electron beam scanning machine comprises a plurality of arc-shaped blocking pieces, wherein the arc-shaped blocking pieces surround a circle, an aperture for passing an electron beam is formed in the center, and the arc-shaped blocking pieces can dynamically adjust the aperture in the center so as to adjust the size of the aperture in the center.
The further improvement is that the number of the arc-shaped baffle plates is not less than four, the arc-shaped baffle plates are surrounded into a circle, a cavity for electron beams to pass through is formed in the middle of the arc-shaped baffle plates, and the aperture size of the cavity influences the number of the passing electron beams.
The further improvement is that the at least four arc-shaped baffle plates can move inwards or outwards within a certain range, so that the central aperture can be adjusted in a stepless manner, and the aperture can form an aperture with any size within the range of motion of the at least four arc-shaped baffle plates.
The further improvement is that the electron beam scanning machine can pre-scan a specific area of the wafer to find the optimal scanning condition, so as to achieve the purpose of the best scanning effect.
In order to solve the above problems, the present invention provides a method for testing an electron beam aperture dynamic adjustment structure of an electron beam scanning machine, wherein a scanning program is built in the electron beam scanning machine, and before formal scanning, the electron beam scanning machine pre-scans a specific region of a wafer to find an optimal scanning condition so as to achieve a best scanning effect;
determining the aperture size through a scanning program, performing image capture in the specific area to form standard image data, and recording the resolution of the standard image data;
and starting a scanning program, loading a wafer into a machine, operating a pre-scanning program, obtaining the resolution in a preset area, comparing the resolution with the resolution of standard image data, and automatically adjusting the aperture size of the electron beam by the machine until the resolution is close to the resolution of the standard image data when a certain deviation occurs, thereby realizing dynamic adjustment of the resolution.
In a further improvement, the specific area refers to an area having a similar pattern structure on different wafers, and the best scanning effect is to maximize the resolution of the scanned image, and the scanning parameters of the machine at this time are the optimal scanning conditions.
The electron beam scanning machine comprises an electron beam aperture dynamic adjusting structure formed by enclosing a plurality of arc-shaped blocking pieces, and the size of the electron beam aperture can be adjusted in a stepless manner within the moving range of the arc-shaped blocking pieces.
In a further improvement, the standard image data is obtained by scanning a specific area of the wafer to obtain a picture with the highest resolution as standard image data, and the picture is used for comparing a wafer image obtained by a subsequent scanning procedure with the standard image data.
The further improvement is that when the deviation between the resolution obtained by pre-scanning the wafer and the resolution of the standard image data exceeds 10%, the machine automatically adjusts the aperture size of the electron beam, re-determines the resolution, and finally makes the deviation between the resolution of the obtained picture and the resolution of the standard image data within 5%.
The dynamic adjusting structure for the electron beam aperture of the electron beam scanning machine station realizes automatic and stepless adjustment of the electron beam aperture size through the movement of the plurality of baffle plates, so that the scanned pictures reach the highest resolution. According to the testing method, through the dynamic adjustment structure of the electron beam aperture and the combination of the pre-scanning function added in the scanning program, the standard image data is formed firstly, and then the scanning picture is compared with the standard image data, so that the dynamic adjustment of the resolution of the scanning picture is realized, and the scanning quality is optimal.
Drawings
Fig. 1 is a conventional electron beam aperture assembly.
Fig. 2 is an electron beam aperture assembly with steplessly adjustable aperture provided by the present invention.
FIG. 3 is a schematic representation of a scanned image of the present invention compared to standard image data.
Detailed Description
The electron beam aperture adjusting structure of the electron beam scanning machine platform comprises a plurality of arc-shaped blocking pieces, wherein the arc-shaped blocking pieces are enclosed into a circle, as shown in figure 1, an aperture for an electron beam to pass through is formed in the center, and the arc-shaped blocking pieces can realize dynamic adjustment so that the aperture in the center can be adjusted in size.
The arc separation blade be no less than four, the arc separation blade of being no less than four enclose into circularly, form a structure similar to camera lens diaphragm, the centre forms a hole that supplies electron beam to pass through, the aperture size of its hole influences the quantity of the electron beam that passes.
The at least four arc-shaped separation blades can move inwards or outwards simultaneously within a certain range, so that the central aperture can be adjusted steplessly, and the aperture can be formed into an aperture with any size within the range of the at least four arc-shaped separation blades.
The electron beam scanning machine can pre-scan a specific area of a wafer, and the optimal scanning condition is found through the adjusting structure capable of dynamically adjusting the aperture so as to achieve the purpose of the best scanning effect.
The invention provides a test method for electron beam aperture dynamic adjusting structure of electron beam scanning machine by utilizing the electron beam aperture dynamic adjusting structure, wherein a scanning program is arranged in the electron beam scanning machine, and the electron beam scanning machine searches for the best scanning condition by pre-scanning a specific area of a wafer before formal scanning so as to achieve the best scanning effect. That is, a pre-scan is performed on a region of a wafer, which is a region having a similar pattern structure as the regions of other wafers to be tested. And adjusting the parameters of the machine to ensure that the resolution of the scanned image reaches the best, wherein the scanning parameters of the machine at the moment are the best scanning conditions.
And determining the aperture size through a scanning program, and after the optimal resolution is reached, performing image capture on the specific area to form standard image data and recording the resolution. The standard image data is used as a reference standard for comparison of subsequent scanning pictures and has the best resolution.
And then starting a scanning program, loading the wafer into a machine, operating a pre-scanning program, scanning a preset area at the same position of the wafer with the standard image data to obtain a picture, comparing the resolution of the picture with the resolution of the standard image data, and when the resolutions of the two pictures have a certain deviation, such as the difference exceeds 10%, automatically adjusting the aperture size of the electron beam by adjusting the position of a baffle plate by the machine until the resolution is close to the resolution of the standard image data, such as controlling the resolution within 5%, thereby realizing dynamic adjustment of the resolution. The deviation value of the resolution and the proximity of the final resolution ratio can be set to be larger or smaller according to different requirements or standards, so as to realize more relaxed or strict tests.
The dynamic adjusting structure for the electron beam aperture of the electron beam scanning machine station realizes automatic and stepless adjustment of the electron beam aperture size through the movement of the plurality of baffle plates, so that the scanned pictures reach the highest resolution. According to the testing method, through the dynamic adjustment structure of the electron beam aperture and the combination of the pre-scanning function added in the scanning program, the standard image data is formed firstly, and then the scanning picture is compared with the standard image data, so that the dynamic adjustment of the resolution of the scanning picture is realized, and the scanning quality is optimal.
The above are merely preferred embodiments of the present invention, and are not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (4)
1. A test method for electron beam aperture dynamic adjustment structure of electron beam scanner is disclosed, the electron beam scanner is provided with a scanning program inside, which is characterized in that: before formal scanning, the electron beam scanning machine searches for the optimal scanning condition by pre-scanning a specific area of a wafer so as to achieve the best scanning effect; the specific area refers to an area with a similar graph structure on different wafers, the best scanning effect is to ensure that the resolution of the scanned picture is the highest, and the scanning parameters of the machine at the moment are the optimal scanning conditions;
determining the aperture size through a scanning program, performing image capture in the specific area to form standard image data, and recording the resolution of the standard image data;
and starting a scanning program, loading a wafer into a machine, operating a pre-scanning program, obtaining the resolution in a preset area, comparing the resolution with the resolution of standard image data, and automatically adjusting the aperture size of the electron beam by the machine until the resolution is close to the resolution of the standard image data when a certain deviation occurs, thereby realizing dynamic adjustment of the resolution.
2. The method of claim 1, further comprising: the electron beam scanning machine comprises an electron beam aperture dynamic adjusting structure formed by enclosing a plurality of arc-shaped blocking pieces, and the size of the electron beam aperture can be adjusted in a stepless manner within the moving range of the arc-shaped blocking pieces.
3. The method of claim 1, further comprising: the standard image data refers to a picture with the highest resolution obtained by scanning a specific area of the wafer and is used as standard image data for comparing a wafer image acquired by a subsequent scanning procedure with the standard image data.
4. The method of claim 1, further comprising: when the deviation between the resolution obtained by pre-scanning the wafer and the resolution of the standard image data exceeds 10%, the machine automatically adjusts the aperture size of the electron beam, re-determines the resolution, and finally enables the deviation between the resolution of the obtained picture and the resolution of the standard image data to be within 5%.
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| US8294125B2 (en) * | 2009-11-18 | 2012-10-23 | Kla-Tencor Corporation | High-sensitivity and high-throughput electron beam inspection column enabled by adjustable beam-limiting aperture |
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