CN109712903A - Electron beam scanning machine electron beam aperture dynamic adjustment structure and test method - Google Patents
Electron beam scanning machine electron beam aperture dynamic adjustment structure and test method Download PDFInfo
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- CN109712903A CN109712903A CN201811607200.8A CN201811607200A CN109712903A CN 109712903 A CN109712903 A CN 109712903A CN 201811607200 A CN201811607200 A CN 201811607200A CN 109712903 A CN109712903 A CN 109712903A
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Abstract
The invention discloses a kind of electron beam scanning machine electron beam aperture dynamic adjustment structures, the defect of wafer is scanned, the electron beam aperture adjustment structure includes multiple to surround circular arc block plate, it is centrally formed the aperture that power supply beamlet passes through, the aperture at center can be carried out size step-less adjustment.The electron beam scanning machine electron beam aperture dynamic adjusts the test method of structure, board built-in scan program, before formal scanning, prescan is being carried out by the specific region to wafer, search out the optimal condition of scanning, to reach best scanning effect, a standard image data is formed, its resolution is recorded；Then start scanner program, wafer loader platform first runs prescanning procedure, resolution is obtained in predeterminable area, then it is compared with the resolution of standard image data, when there is certain deviation, board adjust automatically electron beam pore size, until the resolution of resolution and standard image data is close, realization dynamic adjusts resolution.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices, particularly relate to a kind of electron beam scanning machine electron beam aperture dynamic
Adjust structure.
The invention further relates to the surveys tested using the electron beam scanning machine electron beam aperture dynamic adjustment structure
Method for testing.
Background technique
As the development of integrated circuit technology and critical size are scaled, semiconductor technology also becomes increasingly complex,
Defects detection also become it is more and more difficult with it is complicated.When making defect sample in the prior art, Defect Scanning board is generally utilized,
Defect Scanning is carried out to wafer, obtains wafer defect scan image, wafer defect scan image can be shown existing for crystal column surface
The pattern of defect and crystal column surface, then wafer is loaded into sample making board, whole wafer table is shown by sample making board
The wafer feature image in face, the crystal column surface shape appearance figure shown in conjunction with existing wafer defect scan image and sample making board
Picture finds the position of defect and record in crystal column surface feature image, to realize the positioning of defect, according to the defective bit of record
It sets through focused ion beam cutting crystal wafer, production includes the sample of the defect.
E-Beam (electron beam) defect checking machine platform is applied than wide, can find process window in development phase,
Realize during volume production can ancillary works Shi Faxian system problem and adjusting process window in time, in addition, in mass production,
E-Beam can be used to monitoring process and deviate, however the optical detection board that these defects cannot be commonly used is found,
In our practical applications, board electron beam aperture can not be automatically adjusted after determining in scanning formula at present, be unable to get
Optimal images.
The electron beam through-hole selection mode of existing electron beam scanning machine is as shown in Figure 1, what electron beam was selected by one
The hardware physical pore size component of constant aperture, to form image.When needing a certain aperture, corresponding throughhole member is selected, is schemed
The component of middle 1~6 kind of different pore size size of example, actual capabilities have more components to adapt to more demands.When need compared with
When more electron beams, when can choose the biggish component in aperture, such as No. 1 component of selection, and needing less electron beam, selection
It drops from the air relatively small component, such as No. 5, No. 6 components.Due to being all the aperture of pre-set fixation, and due to each
Aperture is unable to electrodeless adjustment between a component, very inconvenient in actual use, for example 3,4 be two adjacent components, but can
Problem too big using No. 3 component apertures, and using No. 4 component apertures too small can occur, optimal effect is often not achieved.
Summary of the invention
Technical problem to be solved by the present invention lies in provide a kind of electron beam scanning machine electron beam aperture dynamic adjustment
Mode reaches dynamic adjustment pore size purpose by changing electron beam aperture arrangement and prescan mode being added.
The present invention also technical problems to be solved, which are to provide, utilizes the electron beam scanning machine electron beam aperture dynamic
The test method that adjustment structure is tested.
To solve the above problems, a kind of electron beam scanning machine electron beam aperture dynamic adjustment structure of the present invention,
The defect of wafer is scanned, the electron beam aperture adjustment structure of the electron beam scanning machine includes multiple arcs gear
Piece, the multiple arc block plate surround circle, are centrally formed the aperture that power supply beamlet passes through, and the multiple arc block plate is able to achieve
Dynamic adjusts, so that the aperture at center can be carried out big minor adjustment.
A further improvement is that the arc block plate is no less than four, no less than four arc block plates
Surround circle, centre forms the cavity that a power supply beamlet passes through, the pore size in cavity influence across electron beam quantity.
A further improvement is that no less than four arc block plates can respectively in a certain range while inwards or
It moves out, the aperture at center is made to be able to achieve stepless changing, enable arc block plate activity of the aperture at described no less than four
The aperture of arbitrary size is formed in range.
A further improvement is that the electron beam scanning machine can carry out prescan to wafer specific region, search out most
The good condition of scanning, to achieve the purpose that best scanning effect.
To solve the above problems, the present invention provides a kind of survey of electron beam scanning machine electron beam aperture dynamic adjustment structure
Method for testing, the electron beam scanning machine are built-in with scanner program, and the electron beam scanning machine is before formal scanning, logical
It crosses and prescan is carried out to the specific region of wafer, the optimal condition of scanning is searched out, to reach best scanning effect；
Pore size is determined by scanner program, is carried out image-capture in above-mentioned specific region, is formed a standard picture number
According to recording its resolution；
Start scanner program, wafer loader platform first runs prescanning procedure, obtains resolution in predeterminable area, then with
The resolution of standard image data is compared, when there is certain deviation, board adjust automatically electron beam pore size, until solution
The resolution of analysis degree and standard image data is close, realizes dynamic adjustment resolution.
A further improvement is that the specific region refers to the region on different wafers with similar pattern structure, institute
The best scanning effect stated is the picture resolution highest for obtaining scanning, and board sweep parameter at this time is optimum scanning
Condition.
A further improvement is that the electron beam scanning machine, includes the electron beam surrounded by multiple arcs baffle
Aperture dynamic adjustment structure, the size in electron beam aperture can in the scope of activities of arc block plate stepless changing.
It is scanned, is obtained by the specific region to wafer a further improvement is that the standard image data refers to
To the highest photo of resolution as standard image data, the wafer image for the acquisition of follow up scan program is in contrast.
A further improvement is that carrying out the resolution deviation of resolution and standard image data that prescan obtains to wafer
When more than 10%, board adjust automatically electron beam pore size redefines resolution, finally make obtain picture resolution with
The resolution deviation of standard image data is within 5%.
Electron beam scanning machine electron beam aperture of the present invention dynamic adjustment structure, by the movement of multiple baffles,
The automatic and stepless changing for realizing electron beam pore size, the picture for obtaining scanning all reach highest resolution.The present invention
The test method adjusts structure by the dynamic in electron beam aperture, in conjunction with prescan function increased in scanner program, first
Standard image data is formed, then scanned picture is compared with standard image data, scanned picture resolution is moved in realization
State adjustment, scanning quality are optimal.
Detailed description of the invention
Fig. 1 is existing electron beam bore components.
Fig. 2 is the electron beam bore components of energy stepless changing in aperture provided by the invention.
Fig. 3 is the schematic diagram of scan image of the present invention and standard image data comparison.
Specific embodiment
A kind of electron beam scanning machine electron beam aperture dynamic adjustment structure of the present invention, carries out the defect of wafer
Scanning, the electron beam aperture adjustment structure of the electron beam scanning machine includes multiple arcs baffle, the multiple arc gear
Piece surrounds circle, as shown in Figure 1, being centrally formed the aperture that power supply beamlet passes through, the multiple arc block plate is able to achieve dynamic and adjusts
It is whole, so that the aperture at center can be carried out big minor adjustment.
The arc block plate is no less than four, and no less than four arc block plates surround circle, forms one
A structure similar to camera lens aperture, centre form the hole that a power supply beamlet passes through, and the pore size of hole influences
The quantity of the electron beam passed through.
No less than four arc block plates can be moved respectively in a certain range while inwardly or outwardly, make center
Aperture be able to achieve stepless changing, so that aperture is formed in the described no less than four arc block plate scopes of activities arbitrarily large
Small aperture.
The electron beam scanning machine can carry out prescan to wafer specific region, pass through the above-mentioned aperture that is adapted dynamically
Structure is adjusted, optimum scanning condition is searched out, to achieve the purpose that best scanning effect.
Using above-mentioned electron beam aperture dynamic adjustment structure, the present invention provides a kind of electron beam scanning machine electron beam aperture
Dynamic adjusts the test method of structure, and the electron beam scanning machine is built-in with scanner program, the electron beam scanning machine
Before formal scanning, prescan is being carried out by the specific region to wafer, the optimal condition of scanning is being searched out, to reach best
Scanning effect.It first passes through and prescan is carried out to the region on a certain wafer, which is upper with other wafers to be checked
The region with similar pattern structure.Tool parameters are adjusted, the resolution for the image for obtaining scanning reaches most preferably, at this time
Board sweep parameter is optimum scanning condition.
Pore size is determined by scanner program, after reaching optimal resolution, is carried out image in above-mentioned specific region and is grabbed
It takes, forms a standard image data, record the resolution.The standard image data is used for the ginseng that follow up scan picture compares
Standard is examined, there is optimal resolution.
Then start scanner program, wafer loader platform first runs prescanning procedure, with obtain standard image data
The predeterminable area of the same position of aforementioned wafer scans to obtain picture, by the resolution of the picture with the parsing of standard image data
Degree is compared, and when certain deviation occurs in the resolution of two parts of pictures, such as when gap is more than 10%, board is automatically by adjustment
The position of baffle adjusts electron beam pore size, until the resolution of resolution and standard image data is close, for example controls
Within 5%, dynamic adjustment resolution is realized.It can also be according to different requirement or standard, by the deviation of resolution
And last resolution compare close to situation, can be set to it is larger or smaller, it is looser or stringent to realize
Test.
Electron beam scanning machine electron beam aperture of the present invention dynamic adjustment structure, by the movement of multiple baffles,
The automatic and stepless changing for realizing electron beam pore size, the picture for obtaining scanning all reach highest resolution.The present invention
The test method adjusts structure by the dynamic in electron beam aperture, in conjunction with prescan function increased in scanner program, first
Standard image data is formed, then scanned picture is compared with standard image data, scanned picture resolution is moved in realization
State adjustment, is optimal scanning quality.
The above is only a preferred embodiment of the present invention, is not intended to limit the present invention.Come for those skilled in the art
It says, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any modification, equivalent
Replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (9)
1. a kind of electron beam scanning machine electron beam aperture dynamic adjustment structure, is scanned the defect of wafer, feature exists
In: the electron beam aperture adjustment structure of the electron beam scanning machine includes multiple arcs baffle, the multiple arc block plate
Circle is surrounded, the aperture that power supply beamlet passes through is centrally formed, the multiple arc block plate is able to achieve dynamic and adjusts, so that center
Aperture can be carried out big minor adjustment.
2. dynamic adjustment structure in electron beam scanning machine electron beam aperture as described in claim 1, it is characterised in that: described
Arc block plate is no less than four, and no less than four arc block plates surround circle, and it is logical that centre forms a power supply beamlet
The hole crossed, cavity pore size influence across electron beam quantity.
3. electron beam scanning machine electron beam aperture as claimed in claim 2 dynamic adjustment structure, it is characterised in that: it is described not
Arc block plate less than four can be moved respectively in a certain range while inwardly or outwardly, and the aperture at center is made to be able to achieve nothing
Grade adjustment enables aperture to form the aperture of arbitrary size in described no less than four arc block plate scopes of activities.
4. dynamic adjustment structure in electron beam scanning machine electron beam aperture as described in claim 1, it is characterised in that: the electricity
Beamlet scanning machine can carry out prescan to wafer specific region, search out optimum scanning condition, to reach best scanning effect
The purpose of fruit.
5. a kind of electron beam scanning machine electron beam aperture dynamic adjusts the test method of structure, the electron beam scanning machine
It is built-in with scanner program, it is characterised in that: the electron beam scanning machine is passing through the given zone to wafer before formal scanning
Domain carries out prescan, the optimal condition of scanning is searched out, to reach best scanning effect；
Pore size is determined by scanner program, is carried out image-capture in above-mentioned specific region, is formed a standard image data, note
Record its resolution；
Start scanner program, wafer loader platform first runs prescanning procedure, resolution obtained in predeterminable area, then with standard
The resolution of image data is compared, when there is certain deviation, board adjust automatically electron beam pore size, until resolution
It is close with the resolution of standard image data, realize dynamic adjustment resolution.
6. electron beam scanning machine electron beam aperture dynamic as claimed in claim 5 adjusts the test method of structure, feature
Be: the specific region refers to the region on different wafers with similar pattern structure, the best scanning effect
It is the picture resolution highest for obtaining scanning, board sweep parameter at this time is optimum scanning condition.
7. electron beam scanning machine electron beam aperture dynamic as claimed in claim 5 adjusts the test method of structure, feature
Be: the electron beam scanning machine includes the electron beam aperture dynamic adjustment structure surrounded by multiple arcs baffle,
The size in electron beam aperture can in the scope of activities of arc block plate stepless changing.
8. electron beam scanning machine electron beam aperture dynamic as claimed in claim 5 adjusts the test method of structure, feature
Be: the standard image data refers to be scanned by the specific region to wafer, obtains the highest photo of resolution
As standard image data, the wafer image for the acquisition of follow up scan program is in contrast.
9. electron beam scanning machine electron beam aperture dynamic as claimed in claim 5 adjusts the test method of structure, feature
Be: when being more than 10% to the resolution deviation that wafer carries out resolution and standard image data that prescan obtains, board is certainly
Dynamic adjustment electron beam pore size, redefines resolution, finally makes the solution of the picture resolution obtained and standard image data
Analysis degree deviation is within 5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811607200.8A CN109712903B (en) | 2018-12-27 | 2018-12-27 | Dynamic adjusting structure and testing method for electron beam aperture of electron beam scanning machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811607200.8A CN109712903B (en) | 2018-12-27 | 2018-12-27 | Dynamic adjusting structure and testing method for electron beam aperture of electron beam scanning machine |
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| CN109712903A true CN109712903A (en) | 2019-05-03 |
| CN109712903B CN109712903B (en) | 2021-06-15 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110299298A (en) * | 2019-06-25 | 2019-10-01 | 德淮半导体有限公司 | Wafer defect scan method and system, fault detection board |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06139988A (en) * | 1992-10-23 | 1994-05-20 | Hitachi Ltd | Electron microscope |
| US20080054196A1 (en) * | 2006-09-06 | 2008-03-06 | Elpida Memory, Inc. | Variable shaped electron beam lithography system and method for manufacturing substrate |
| US20110114838A1 (en) * | 2009-11-18 | 2011-05-19 | Liqun Han | High-Sensitivity and High-Throughput Electron Beam Inspection Column Enabled by Adjustable Beam-Limiting Aperture |
| CN108183078A (en) * | 2017-12-21 | 2018-06-19 | 上海华力微电子有限公司 | A kind of electron beam scans formula parameters self-tuning method |
-
2018
- 2018-12-27 CN CN201811607200.8A patent/CN109712903B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06139988A (en) * | 1992-10-23 | 1994-05-20 | Hitachi Ltd | Electron microscope |
| US20080054196A1 (en) * | 2006-09-06 | 2008-03-06 | Elpida Memory, Inc. | Variable shaped electron beam lithography system and method for manufacturing substrate |
| US20110114838A1 (en) * | 2009-11-18 | 2011-05-19 | Liqun Han | High-Sensitivity and High-Throughput Electron Beam Inspection Column Enabled by Adjustable Beam-Limiting Aperture |
| CN108183078A (en) * | 2017-12-21 | 2018-06-19 | 上海华力微电子有限公司 | A kind of electron beam scans formula parameters self-tuning method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110299298A (en) * | 2019-06-25 | 2019-10-01 | 德淮半导体有限公司 | Wafer defect scan method and system, fault detection board |
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| CN109712903B (en) | 2021-06-15 |
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