CN109690406A - Lithographic equipment and support construction background - Google Patents
Lithographic equipment and support construction background Download PDFInfo
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- CN109690406A CN109690406A CN201780054845.0A CN201780054845A CN109690406A CN 109690406 A CN109690406 A CN 109690406A CN 201780054845 A CN201780054845 A CN 201780054845A CN 109690406 A CN109690406 A CN 109690406A
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- lithographic equipment
- equipment according
- support construction
- conductive fluid
- electric conductor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Networks & Wireless Communication (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A kind of lithographic equipment may include fixed frame with the first electric conductor and the support construction for being configured to support object.Support construction is movably coupled to frame and has the second electric conductor.Lithographic equipment can also include the conductive fluid that the first electric conductor is electrically coupled to the second electric conductor.
Description
Cross reference to related applications
This application claims the U.S. Provisional Patent Application No.62/385 submitted on September 9th, 2016,623 priority,
Entire contents are incorporated herein by reference.
Technical field
This disclosure relates to the support construction of the object of lithographic equipment and support such as substrate or patterning apparatus.
Background technique
Lithographic equipment is a kind of machine that desired pattern is applied on substrate, is typically applied on the target part of substrate
Device.It is, for example, possible to use lithographic equipments to manufacture integrated circuit (IC).In this case, patterning apparatus is (for example, mask
Or mask) circuit pattern to be formed in the single layer of IC can be generated.The pattern can be transferred to substrate (for example, silicon
Chip) on target part (e.g., including the part of one or several tube cores) on.The transfer of pattern is usually via in substrate
Imaging on the layer of the radiation-sensitive materials (resist) of upper offer carries out.In general, single substrate will include continuous patterned
Adjacent target portions network.Traditional lithographic equipment includes so-called stepper (wherein by once exposing entire pattern
Each target part is irradiated on light to target part) and so-called scanner (wherein by radiation beam in assigned direction
Scan pattern irradiates each target part parallel or anti-parallel to the direction simultaneously to scan substrate on (" scanning " direction)).
It can also be by pattern will be transferred to substrate from patterning apparatus on imprint patterns to substrate.
Lithographic equipment typically comprises at least one movable support structure of supporting object, for example, the lining of support substrate
Bottom stage or the mask platform for supporting patterning apparatus.Use one or more conducting wires from stationary source for the electric current of power or signal
(for example, frame) is provided to movable support structure.In general, these conducting wires (and the other components such as compressed-air line)
It is accommodated in conduit carrier (for example, cable plate or umbilical line), which provides conduit to conducting wire with from fixation
Component is transmitted to movable support structure.In general, conduit carrier is configured as moving in lithographic equipment in movable support structure
It is bent (for example, folding and unfolding) when dynamic, and when the bending of conduit carrier, the conducting wire being included in also is bent.
One source of the system failure and pollution in lithographic equipment is conduit carrier and carries intracorporal lead included in conduit
Line.When conduit carrier and conducting wire are bent due to the movement of movable support structure, the material and conducting wire of conduit carrier are formed
(for example, forming the material of conduit carrier or the polymer insulation layer of conducting wire) begins to wear out.And final, conduit carrier and conducting wire
It may wear to system failure point, and/or pollution particle generated due to this abrasion.
Summary of the invention
Therefore, in some embodiments, reduce or eliminate using conduit carrier and conducting wire and will be electric in lithographic equipment
Stream is transferred to movable support structure from fixation member, to reduce or eliminate the source of the system failure and pollution.
In some embodiments, a kind of lithographic equipment includes having the fixed frame of the first electric conductor and being configured to support
The support construction of object.Support construction is movably coupled to frame and has the second electric conductor.Lithographic equipment further include by
First electric conductor be electrically coupled to the second electric conductor conductive fluid (e.g., including the fluid including water of the conductive metals such as mercury
With the fluid of salt, the fluid including plasma or including the fluid of ionized gas).
In some embodiments, frame limits the cavity for accommodating conductive fluid.Supporting element can be configured as along first
First distance is moved in direction, and the size that cavity has in a first direction can be equal to or more than first distance.Supporting element
It can be additionally configured to move second distance along the second direction for being different from first direction, and cavity has in a second direction
Some sizes can be equal to or more than second distance.Cavity can be Chong Die with supporting element in vertical direction.Lithographic equipment can be with
It is configurable to generate the air-flow in the cavity by conductive fluid holding, or is configurable to generate and conductive fluid is maintained at cavity
Interior magnetic field.
In some embodiments, the second electric conductor includes the first part being immersed in conductive fluid.
In some embodiments, lithographic equipment includes electrical components, which is electrically coupled to the second electric conductor and couples
To support construction, so that electrical components are moved together with support construction.Electrical components may include be configured as emit or receive via
The sensor of the signal of conductive fluid transmission.Electrical components may include the locator for being configured as moving support structure.
In some embodiments, lithographic equipment includes the electrical components for being electrically coupled to the first electric conductor.Electrical components may include
It is configured as the data processing equipment of the process of control lithographic equipment.
In some embodiments, conductive fluid includes mercury or gallium.In some embodiments, conductive fluid includes solvent and electricity
Solve matter solute.Solvent may include water, and electrolyte solute may include salt, such as sodium chloride.In some embodiments, it leads
Electrofluid includes plasma or ionized gas.
In some embodiments, support construction includes the substrate table for being configured to support substrate.In some embodiments, it props up
Support structure includes the mask platform for being configured to support patterning apparatus.
Below with reference to the accompanying drawings other feature and advantage and various embodiments for embodiment being described in detail are structurally and operationally.
It should be noted that the present invention is not limited to specific embodiments described herein.These embodiments are merely for illustrative purpose and at this
It is presented in text.Based on the introduction for including herein, other embodiments will be very clear those skilled in the relevant art.
Detailed description of the invention
It is incorporated herein and the attached drawing for forming specification a part shows the present invention, and into one together with specification
It walks principle for explaining the present invention and those skilled in the relevant art is enabled to manufacture and use the present invention.
Figure 1A is the schematic diagram according to the reflective type photomask equipment of one embodiment.
Figure 1B is the schematic diagram according to the transmission-type lithographic equipment of one embodiment.
Fig. 2 is the schematic plan view of the substrate table and substrate according to one embodiment.
Fig. 3 is the schematic side according to the lithographic equipment with fixed frame and movable support structure of one embodiment
View.
Fig. 4 is the schematic plan view according to the lithographic equipment of Fig. 3 of one embodiment.
Fig. 5 is the block diagram according to the lithographic equipment with fixed frame and movable support structure of one embodiment.
Fig. 6 is the schematic side elevation for being configurable to generate air and blowing the lithographic equipment of leaching according to one embodiment.
Fig. 7 is the schematic side elevation according to the lithographic equipment for being configurable to generate magnetic field of one embodiment.
By the detailed description provided with reference to the accompanying drawing, the feature and advantage of the disclosed embodiments will become brighter
Aobvious, the identical appended drawing reference in attached drawing always shows corresponding element.In the accompanying drawings, identical appended drawing reference usually indicates phase
With, the similar element of intimate and/or structure.Element is for the first time in the attached drawing wherein occurred is marked by respective drawings
Leftmost digital representation.Unless otherwise noted, it is otherwise not construed as in proportion through the attached drawing that the disclosure provides
It draws.
Specific embodiment
The disclosed embodiments only illustrate the present invention.The scope of the present invention is not limited to the disclosed embodiments.The present invention by
Appended claims limit.
To " example ", " one embodiment ", " embodiment ", " example implementation in described embodiment and specification
Example ", the reference instruction described embodiment of " some embodiments " etc. may include specific feature, structure or characteristic, still
Each embodiment may not necessarily include the specific feature, structure or characteristic.Moreover, such phrase be not necessarily meant to refer to it is same
Embodiment.In addition, when describing a particular feature, structure, or characteristic in conjunction with the embodiments, it should be understood that carry out shadow in conjunction with other embodiments
Such feature, structure or characteristic are rung in the range of the knowledge of those skilled in the art, regardless of these other embodiments are
It is no to be clearly described.
However, presentation can realize embodiment of the disclosure wherein before such embodiment is more fully described
Example context be beneficial.
Example is reflective and transmission-type lithography system
Figure 1A and Figure 1B is the lithographic equipment 100 and lithographic equipment 100' that embodiment of the disclosure wherein may be implemented respectively
Schematic diagram.Lithographic equipment 100 and lithographic equipment 100' each include the following terms: be configured as adjust radiation beam B (for example,
DUV or EUV radiation) irradiation system (illuminator) IL；Patterning apparatus is configured to support (for example, mask, mask or dynamic
State patterning apparatus) MA and it is connected to support construction (for example, mask platform) MT of the first locator PM, the first locator PM quilt
It is configured to be accurately located patterning apparatus MA；And be configured as keeping substrate the chip of coating (for example, resist) W and
It is connected to substrate support structure (for example, substrate table) WT of the second locator PW, the second locator PW is configured as accurately fixed
Position substrate W.Lithographic equipment 100 and 100', which also have, is configured as that the pattern of radiation beam B will be endowed by patterning apparatus MA
Project the projection system PS on target part (e.g., including the part of one or more tube cores) C of substrate W.It is set in photoetching
In standby 100, patterning apparatus MA and projection system PS are reflective.In lithographic equipment 100', patterning apparatus MA and throwing
The system PS of penetrating is transmission-type.In some embodiments, projection system PS is Reflected refraction type no.
Irradiation system IL may include for guide, shape or control the radiation such as refraction of B, reflection, magnetism, electromagnetism,
Various types of optical components such as electrostatic or other kinds of optical component or any combination thereof.
Support construction MT is depending on the orientation of patterning apparatus MA, the design of lithographic equipment 100 and 100' and such as
The mode whether patterning apparatus MA is maintained at the medium other conditions of vacuum environment carrys out holding pattern makeup and sets MA.Support construction
MT can be used machinery, vacuum, electrostatic or other clamping techniques come holding pattern makeup set MA.Support construction MT can be frame
Or estrade, such as can be fixed as needed or movably.Support construction MT may insure that patterning apparatus is in
Such as the desired position relative to projection system PS.
Term " patterning apparatus " MA, which is broadly interpreted to refer to, can be used for assigning in its cross section to radiation beam B
Pattern is given to generate any device of pattern in the target part C of substrate W.The pattern for being endowed radiation beam B can correspond to
Particular functional layer in the device that integrated circuit etc. generates in target part C.
Patterning apparatus MA can be (such as in the lithographic equipment 100' of Figure 1B) of transmission-type or reflective (such as scheme
In the lithographic equipment 100 of 1A).The example of patterning apparatus MA includes mask, mask, array of programmable mirrors and may be programmed
LCD panel.Mask is well known in photoetching, and including mask-types such as binary system, alternating phase-shift and attenuating phase-shifts
And various hybrid mask types.One example of array of programmable mirrors uses the matrix arrangements of small mirror, and each small mirror can
Incident radiation beam is reflected in different directions individually to tilt.Inclined mirror is assigned in the radiation beam B reflected by mirror matrix
Give pattern.
Term " projection system " PS may include being suitable for used exposing radiation or being suitable for such as immersion liquid
Use or vacuum the other factors such as use any kind of projection system, including refraction, reflection, reflected refraction, magnetic, electricity
Magnetic and electrostatic optics system, or any combination thereof.Vacuum environment can be used for EUV or electron beam irradiation, because other gases can
Too many radiation or electronics can be absorbed.Therefore, by means of vacuum wall and vacuum pump, vacuum environment can be provided to entire optical path.
Lithographic equipment 100 and/or lithographic equipment 100' can be tool, and there are two (twin-stage) or more substrate support structures
The type of WT (and/or two or more mask platforms).In this " multistage " machine, additional substrate branch can be used parallel
Support structure WT, or preliminary step can be executed on one or more workbench, while using other one or more substrates
Support construction WT is exposed.
With reference to Figure 1A and Figure 1B, illuminator IL receives radiation beam from radiation source S O.Source SO and lithographic equipment 100,100' can
To be isolated entity, for example, when source SO is excimer laser.In this case, source SO is not considered to form photoetching
A part of equipment 100 or 100', and radiation beam B is by means of including the light beam for for example suitably orienting mirror and/or beam expander
Delivery system BD (in fig. ib) is transmitted to illuminator IL from source SO.In other cases, source SO can be lithographic equipment 100,
The component part of 100', such as when source SO is mercury lamp.If desired, source SO and illuminator IL and beam delivery system BD can
To be referred to as radiating system.
Illuminator IL may include the adjuster AD (in fig. ib) for adjusting the angle intensity distribution of radiation beam.In general,
Intensity distribution in the pupil plane of adjustable illuminator at least externally and/or internally radial extension is (commonly referred to as
" σ-outside " and " σ-inside ").In addition, illuminator IL may include various other components (in fig. ib), such as integrator IN
With condenser CO.Illuminator IL can be used for adjusting radiation beam B to have desired uniformity and intensity point in its cross section
Cloth.
With reference to Figure 1A, radiation beam B is incident on the patterning apparatus being maintained on support construction (for example, mask platform) MT
On (for example, mask) MA, and patterned by patterning apparatus MA.In lithographic equipment 100, radiation beam B is from patterning apparatus
(for example, mask) MA reflection.After patterning apparatus (for example, mask) MA reflection, radiation beam B passes through projection system PS,
Projection system PS focuses on radiation beam B on the target part C of substrate W.By means of the second locator PW and position sensor IF2
(for example, interferometric measuring means, linear encoder or capacitance type sensor) can accurately move substrate support structure WT (example
Such as, so that different target part C is located in the path of radiation beam B).Similarly, the first locator PM and another location
Sensor IF1 can be used for being accurately located patterning apparatus (for example, mask) MA relative to the path of radiation beam B.Patterning
Mask alignment mark M1, M2 and substrate alignment mark P1, P2 can be used to be aligned in device (for example, mask) MA and substrate W.
With reference to Figure 1B, radiation beam B is incident on the patterning apparatus being maintained in support construction (for example, mask table MT)
In (for example, mask MA), and patterned by patterning apparatus.After passing through mask MA, radiation beam B passes through projection system
PS, projection system PS are focused of the light beam on the target part C of substrate W.Projection system has to be conjugated with irradiation system pupil IPU
Pupil PPU.Intensity distribution of the partial radiation from irradiation system pupil IPU issues, and passes through mask pattern without being covered
The influence of diffraction at mould pattern generates the image of intensity distribution at irradiation system pupil IPU.
By means of the second locator PW and position sensor IF (for example, interferometric measuring means, linear encoder or condenser type
Sensor), substrate support structure WT can be accurately moved (for example, so that different target part C is located in radiation beam B
Path in).Similarly, the first locator PM and another location sensor (being not shown in Figure 1B) can be used for relative to radiation
The path of beam B is accurately located mask MA (for example, after mechanically fetching from mask library or during scanning).
In general, the movement of mask table MT can be (rough by means of forming the long-stroke module of the part of the first locator PM
Positioning) and short stroke module (finely positioning) Lai Shixian.Similarly, the movement of substrate support structure WT can be used to form second
The long-stroke module of the part of locator PW and short stroke module are realized.In the case where stepper (opposite with scanner),
Mask table MT can be connected only to short-stroke actuator, or can be fixed.Can be used mask alignment mark M1, M2 and
Substrate alignment mark P1, P2 comes alignment mask MA and substrate W.Although substrate alignment mark (as shown in the figure) occupies dedicated target portions
Point, but they can be in the space positioned at target part between (alignment mark of referred to as crossing).Similarly, it is above mentioned in mask MA
In the case where being provided with more than one tube core, mask alignment mark can be between tube core.
Mask table MT and patterning apparatus MA can in a vacuum chamber, and wherein can be used for will be all by vacuum inner machine people IVR
Such as mask patterning apparatus is movable into and out vacuum chamber.Alternatively, when mask table MT and patterning apparatus MA are in vacuum chamber
Similar with vacuum inner machine people IVR when external, the outer robot of vacuum can be used for various transport operations.In vacuum and outside vacuum
Robot requires to be calibrated, with the fixation for any payload (for example, mask) to be smoothly transferred to transfer station
Motion bracket.
Lithographic equipment 100 and 100' can be used at least one of following modes:
1. support construction (for example, mask platform) MT and substrate support structure WT keep substantially static in step mode, and
The entire pattern for assigning radiation beam B is once projected on target part C (that is, single static exposure).Then, substrate supports knot
Structure WT is shifted in X-direction and/or Y-direction, and different target part C is exposed.
2. support construction (for example, mask platform) MT and substrate support structure WT are synchronized, simultaneously in scan pattern
The pattern for assigning radiation beam B is projected on target part C (that is, single dynamic exposure).Substrate support structure WT is relative to branch
The speed of support structure (for example, mask platform) MT and direction can be by (diminution) magnifying powers and image reversal characteristics of projection system PS
To be determined.
3. support construction (for example, mask platform) MT keeps substantially static in another mode, to keep programmable patterning
Device, and substrate support structure WT is understood moved or scanned, while the pattern for assigning radiation beam B is projected on target part C.
Impulse radiation source SO can be used, and continuous after each movement of substrate support structure WT or during scanning
It radiates and updates programmable patterning apparatus between pulse as needed.This operation mode can be readily applied to using such as
The maskless lithography of the programmable patterning apparatus such as the array of programmable mirrors of type described herein.
It can also be using combination and/or the variant of described use pattern or entirely different use pattern.
Fig. 2 schematically depicts the substrate supports described in the lithographic equipment according to Figure 1A or Figure 1B of one embodiment
The arrangement of structure WT, wherein substrate support structure WT includes imaging sensor.In some embodiments, as shown in Fig. 2, substrate branch
Support structure WT includes two imaging sensors IAS1 and IAS2.Imaging sensor IAS1 and IAS2 can be used for passing through spatial image
Scanning image sensor IAS1 or IAS2 determines the position of the spatial image of the pattern in mask MA (for example, object tag).
The object tag in mask MA can be derived relative to wafer station from the information obtained using imaging sensor IAS1, IAS2
The relative position of WT, and multiple parameters can be calculated according to the measurement position of the object tag in mask MA.For example, mask MA
These parameters may include MA magnifying power (M), around the rotation (R) of z-axis, mask MA along x-axis and y-axis translation (Cx,
Cy), the magnifying power (My) on the direction y and scanning deflection (RI).
It is to be understood that there may be more or fewer images to pass instead of two imaging sensors IAS1 and IAS2
Sensor, for example, one or three.The form of these sensors and electronic device is known to the skilled in the art, and will
No longer it is described in further detail.The aligning guide of alternative form is possible, and is useful within the scope of the invention.?
In other embodiments, imaging sensor IAS1, IAS2 can be saved, or they are provided in the wafer station point with carrying substrate
On the supporting element opened.
In another embodiment, lithographic equipment 100 includes the pole for being configurable to generate the beam of EUV radiation for EUV lithography
The ultraviolet source (EUV).In general, EUV source is configured in radiating system, and corresponding irradiation system is configured as adjusting EUV source
Beam of EUV radiation.
The exemplary embodiment of lithographic equipment
Fig. 3 is the photoetching including frame 102 and the support construction 104 for being configured to support object according to one embodiment
The schematic side elevation of equipment 100.In some embodiments, frame 102 can be fixed, and in other embodiments,
Frame 102 can be moveable.In some embodiments, support construction 104 can be movably coupled to frame 102, make
It is mobile relative to frame 102 to obtain support construction 104.
In some embodiments, lithographic equipment 100 is being structurally and functionally similar to as above with reference to Figure 1A and Figure 1B institute
The lithographic equipment 100 or 100' stated.In some embodiments, for example, support construction 104 can be as discussed in Figure 1A and Figure 1B
Be configured to support patterning apparatus (for example, mask, mask or dynamic pattern makeup set) mask table MT.In some realities
It applies in example, support construction 104 can be the substrate for being configured to support such as chip substrate discussed in such as Figure 1A and Figure 1B
Support construction WT.In some embodiments, frame 102 is insulator.
Lithographic equipment 100 can also include the conductive fluid that electric current is conducted by the movement of electronics, ion or both
106.In some embodiments, the conductivity that conductive fluid 106 has is greater than the conductivity of pure water, that is, greater than about 10-4mho/m。
In some embodiments, conductive fluid 106 completely or partially include mercury, gallium, any other suitable metal or
A combination thereof has fluid state under the operation temperature of lithographic equipment 100.
In some embodiments, conductive fluid 106 completely or partially includes solvent and electrolyte solute.For example, solvent
It can be water, and electrolyte solute can be salt, such as sodium chloride or calcium chloride.In other embodiments, solvent can be
Fluid in addition to water, and electrolyte solute can be material in addition to the salt.
Frame 102 may include at least one electric conductor 108 for being electrically coupled to conductive fluid 106, and support construction 104
It may include at least one electric conductor 110 for being electrically coupled to conductive fluid 106.Therefore, conductive fluid 106 is electric by electric conductor 108
It is coupled to electric conductor 110 to allow to transmit electric current between electric conductor 108 and 110.It discusses in greater detail below, transmission
Electric current may, for example, be input signal, output signal or the power to electrical components.
Electric conductor 108 and 110 can be any suitable electric conductor, including such as Solid conductive metallic is (for example, copper or appoint
What his suitable Solid conductive metallic) or any other suitable solid conductive material.In some embodiments, electric conductor
108 be power or signal input/output electric connector.In some embodiments, electric conductor 110 is item or by Solid conductive metallic
Any other suitable structure that (for example, copper) is constituted.In some embodiments, electric conductor 110 may be coupled to support construction
104, so that conductor 110 is moved together with support construction 104.
In some embodiments, frame 102 limits the cavity 112 for accommodating conductive fluid 106.Cavity 112 is oriented to make
At least part 114 for obtaining electric conductor 110 contacts conductive fluid 106 (for example, part 114 can be immersed in conductive fluid 106
In), and a part 118 of electric conductor 108 can also contact the conductive fluid 106 in cavity 112 (for example, part 118 can be with
It is immersed in conductive fluid 106).Therefore, electric conductor 110 is electrically coupled to electric conductor 108 by conductive fluid 106.
In some embodiments, cavity 112 is configured (for example, forming, scale cun and positioning) at making electric conductor 110
A part 114 contacts conductive fluid 106 in some or entire motion range of movable support structure 104.For example, such as Fig. 3
With shown in Fig. 4, movable support structure 104 can be configured as mobile first distance and in difference on 122 in a first direction
Second direction 124 on mobile second distance.In some embodiments, first direction 122 and second direction 124 are perpendicular to one another,
As shown in Figure 3 and Figure 4, and the X-axis and Y-axis of lithographic equipment 100 be can correspond to.In such embodiments, cavity 112
Shape and size can be designed to have first size 126 to adapt to support construction 104 on the direction for being parallel to direction 122
Movement on 122 in a first direction, and the shape and size of cavity 112 can be designed to be parallel to second direction 124
Direction on have the second size 128 to adapt to movement of the support construction 104 in second direction 124.
In some embodiments, first size 126 and the second size 128 can be equal to support construction 104 in a first direction
122 and second direction 124 on the respective distance that moves.Therefore, if electric conductor 110 is located at the center of support construction 104, electricity
Conductor 110 do not contact limit cavity 112 peripheral wall, until support construction 104 in a first direction 122 or second direction 124 on
Reach its terminal location.
(as shown in Figure 3 and Figure 4) in other embodiments, first size 126 and the second size 128 can be greater than support knot
Structure 104 in a first direction 122 and second direction 124 on the respective distance that moves.Therefore, if electric conductor 110 is located at support knot
The center of structure 104, then electric conductor 110 is not outer with restriction cavity 112 at any point in the motion range of support construction 104
Wall is adjacent.
Collective reference Fig. 3 to Fig. 5, electric conductor 110 are directly or indirectly electrically coupled to one or more electrical components 130, and one
A or multiple electrical components 130 are coupled to movable support structure 104.In some Indirect Electro coupling embodiments, electric conductor 110 with
The bus for being coupled to movable support structure 104 is electrically coupled, and electrical components 130 are electrically coupled to bus, and bus is by electrical components 130
It is electrically coupled to electric conductor 110.In some embodiments, multiple electrical components 130 may be coupled to bus.It is electrically coupled indirectly some
In embodiment, electric conductor 110 is electrically coupled to one or more signal processings or regulating member, such as amplifier and filter,
It is electrically coupled to electrical components 130.
Electrical components 130, which can be, to be needed power at any point during the operation of lithographic equipment 100, receives signal, hair
Penetrate any device of signal or any combination thereof.For example, in some embodiments, electrical components 130 can be to form locator PM
Or the long-stroke module (coarse positioning) or short stroke module (accurate positionin) of the part of locator PW, such as above with reference to Figure 1A and figure
Described in 1B.In some embodiments, electrical components 130 can be sensor (for example, interferometric measuring means, linear encoder or electricity
Capacity sensor).For example, electrical components 130, which can be composition, sets supporting element MT or substrate support structure for registration pattern makeup
The sensor of the position sensor IF1 or position sensor IF2 of WT, above with reference to as described in Figure 1A and Figure 1B.Such as electricity
Component 130 can be the figure for forming the position for the spatial image for determining the pattern (for example, object tag) on patterning apparatus MA
It is such as described in reference diagram 2 above as the sensor of sensor IAS1 and IAS2.
Collective reference Fig. 3 to Fig. 5, electric conductor 108 are directly or indirectly electrically coupled to one or more electrical components 132, electric portion
Part 132 can couple or be not coupled to frame 102.In some embodiments, electrical components 132 include data processing equipment, for example,
Control the controller of all or some movements and measurement of the various parts (for example, actuator and sensor) of lithographic equipment 100.
Example data processing equipment includes signal transacting data disposal ability, relevant to the operation of lithographic equipment 100 to realize
It is expected that calculating.In some embodiments, data processing equipment is the system of many subelements, and each subelement handles lithographic equipment
Real-time data acquisition, processing and the control of subsystem or component in 100.For example, a processing subsystem can be exclusively used in determining
The SERVO CONTROL of position device PW, and individually unit even can handle rough and fine actuator or different axis.Another list
Member may be exclusively used in read-out position sensor IF1 or IF2.The overall control of lithographic equipment 100 can by with these subsystems
The central processing unit controls of other equipment communication involved in reason unit, operator and photolithographic procedures.In some implementations
In example, data processing equipment can be microprocessor, and in some embodiments, can execute and be recorded in such as hard drive
The non-transient computer readable storage mediums such as device, floppy disk, CD (compact disk (CD) or digital versatile disc (DVD)), flash memory
On instruction.
In some embodiments, conductive fluid 106 replaces the function of conventional catheters carrier, conventional catheters partially or completely
Carrier pin is to being electrically coupled electrical components 130 and 132 and what is extended between fixed frame 102 and movable support structure 104 leads
Line and conduit is provided and is used in lithographic equipment.Therefore, in some embodiments, can be omitted from lithographic equipment 100
Carry conducting wire or for the electrical components 130 in movable support structure 104 to be electrically coupled to not in movable support structure 104
Electrical components 132 other conductors all or some conduit carriers, to reduce or eliminate the wind of the system failure and/or pollution
Danger.
In some embodiments, lithographic equipment 100 be configured as be used together with such as EUV or electron beam irradiation it is true
It is operated in Altitude.In some vacuum embodiments, lithographic equipment 100 includes for conductive fluid 106 to be maintained at cavity 112
Interior mechanism.Fig. 6 and Fig. 7 shows two exemplary embodiments.
As shown in fig. 6, in some embodiments, lithographic equipment 100 can be configured as generation and keep conductive fluid 106
Air in cavity 112 blows leaching.It is blown in leaching embodiment in some air, conductive fluid 106 can have low-steam pressure.Example
Such as, in some embodiments, conductive fluid 106 be at room temperature with about 100pPa vapour pressure ionic liquid (in room
The pure water of the lower vapour pressure with about 3kPa of temperature is compared).Also, lithographic equipment 100 is configured as the electrical conduction current in cavity 112
Air-flow 134 is generated on the exposed surface of body 106.Air-flow 134 forms the air being maintained at conductive fluid 106 in cavity 112
Blow leaching.In some embodiments, frame 102 includes the outlet 138 for introducing the entrance 136 and discharge air-flow 134 of air-flow 134.?
In some embodiments, air-flow 134 is by one of helium, argon gas, hydrogen, nitrogen etc. or a variety of forms.
As shown in fig. 7, in some embodiments, lithographic equipment 100, which can be configured as generation, which repels conductive fluid 106, makes
It obtains it and is retained in the magnetic field in cavity 112.In some magnetic field embodiments, conductive fluid 106 is ionized gas or plasma
Body.For example, in some embodiments, ionized gas or plasma include inert gas or mercury vapour.Lithographic equipment 100 may be used also
To include the magnet for being configurable to generate magnetic field 142, the magnetic field 142 is so that conductive fluid is retained in the side in cavity 112
Formula repels conductive fluid 106 (for example, ionized gas or plasma).In some embodiments, magnet 140 is permanent magnet.?
In other embodiments, magnet 140 is electromagnet.
Although herein can be with specific reference to the use of lithographic equipment in ic manufacturing, but it is to be understood that herein
The lithographic equipment of description can have other application, and such as guidance of integrated optics system, magnetic domain memory and detection pattern are put down
The manufacture of plate display, liquid crystal display (LCD), film magnetic head etc..The skilled person will understand that in the upper of such alternate application
Hereinafter, any use of term " chip " herein or " tube core " can be considered as respectively with more generally term " substrate "
Or " target part " is synonymous.Substrate referred to herein for example (can be applied usually to substrate in track before or after exposure
Add the tool of resist layer and the resist for exposure of developing), it is processed in metering outfit and/or checking tool.What is be applicable in
In the case of, disclosure herein can be applied to such and other substrate processing tools.In addition, substrate can be located
Reason more than once, such as to generate multilayer IC so that term substrate used herein also may refer to it is included multiple
The substrate of processed layer.
Although above can in the context of optical lithography to the use of embodiment carried out with specific reference to,
It should be appreciated that embodiment can be used for other application, such as imprint lithography, and under where the context permits, it is not only
It is limited to optical lithography.In imprint lithography, the pattern in patterning apparatus limits the pattern generated on substrate.Patterning apparatus
Pattern can be pressed into the resist layer for being provided to substrate, by applying electromagnetic radiation, heat, pressure or its group to substrate
It closes to solidify resist.After resist solidification, it will be patterned into device and remove resist, to leave pattern wherein.
It should be appreciated that words or terms herein are the purposes for description rather than limited, so that the art of this specification
Language or wording will be explained by those skilled in the relevant art in view of introduction herein.
In the embodiment being described herein, under where the context permits, term " lens " and " lens element " can
To refer to any one of various types of optical components or combination, including refraction, reflection, magnetism, electromagnetism and electrostatic optics
Component.
In addition, term " radiation " used herein and " light beam " include all types of electromagnetic radiation, including ultraviolet
(UV) radiation (for example, the wavelength X having is 365,248,193,157 or 126nm), extreme ultraviolet (EUV or grenz ray) radiation
(for example, the wavelength having in the range of 5-20nm, such as 13.5nm) or the hard X to work in the case where being less than 5nm are penetrated
The particle beams of line and such as ion beam or electron beam.In general, the wavelength having is about 400 to the radiation quilt between about 700nm
It is considered visible radiation；Radiation of the wavelength having between about 780-3000nm (or bigger) is considered as IR radiation.UV is
Refer to the radiation that the wavelength having is about 100-400nm.In photoetching technique, term " UV " is also applied for be produced by mercury discharge lamp
Raw wavelength: G line 436nm；H line 405nm；And/or I line 365nm.Vacuum UV or VUV (that is, the UV absorbed by gas) refer to tool
Some wavelength are the radiation of about 100-200nm.Deep UV (DUV) typically refers to the wavelength having in the range of 126nm to 428nm
Radiation, and in one embodiment, the DUV radiation used in the lithographic apparatus can be generated in excimer laser.It should
Understand, radiation of the wavelength having in the range of such as 5-20nm is related to the radiation with specific band, wherein at least part
Wavelength is in the range of 5-20nm.
Term " substrate " used herein usually description is added with the material of subsequent layers of material thereon.In embodiment,
Substrate itself can be patterned, and the material added above it can also be patterned, or can retain without
Patterning.
Term " substantial exposure " used herein usually description physical contact with one another but be only slightly disengaged each other (this usually
Caused by misalignment tolerance) element or structure.It should be appreciated that one or more special characteristic used herein, structure or
The purpose that space description (for example, " perpendicular alignmnet ", " substantial exposure " etc.) between characteristic is merely to illustrate, and not
In the case where being detached from spirit and scope of the present disclosure, the practical realization of structure described herein may include misalignment tolerance.
Although specific embodiment is described above, but it is to be understood that embodiment can be described to be different from
Mode is practiced.This description is not intended to be limited to the present invention.
Above description is intended to illustrative and not limiting.Therefore, it is clear to a person skilled in the art that, in the case where not departing from
In the case where telling the scope of the claims stated in person, it can modify to the described present invention.
It should be appreciated that specific embodiment part rather than summary of the invention and abstract part are intended for explaining that right is wanted
It asks.Summary of the invention and abstract part can illustrate one or more but not all exemplary embodiment desired by inventor,
Therefore, it is not intended to limit the invention in any way and appended claims.
Embodiment is described by means of showing the function building block of the realization of specific function and its relationship above.For the ease of
Description, arbitrarily defines the boundary of these function building blocks herein.Substitution boundary can be defined, as long as being appropriately performed specified
Function and its relationship.
The above description of specific embodiment so will fully disclose general aspects of the invention, allow other people
It is easily directed in the case where not departing from universal of the invention by applying the knowledge within the scope of art technology various
Using and modify and/or adapt to such specific embodiment, without excessive experiment.Therefore, based on the religion being presented herein
It leads and instructs, in the meaning and scope for the equivalent that such adaptation and modification are intended to fall within the disclosed embodiments.It should manage
Solution, words or terms herein are the purposes for description rather than limited, so that the term of this specification or wording will be by these
Field technical staff explains in view of these introductions and guidance.
Range and range of the invention should not be limited by any of above exemplary embodiment, and should be according only to appended
Claim and its equivalent are defined.
Claims (20)
1. a kind of lithographic equipment, comprising:
Fixed frame has the first electric conductor；
Support construction is configured to support object, is movably coupled to the frame, and have the second electric conductor；And
Conductive fluid is configured as first electric conductor being electrically coupled to second electric conductor.
2. lithographic equipment according to claim 1, wherein the frame limits the cavity for accommodating the conductive fluid.
3. lithographic equipment according to claim 2, in which:
The support construction is configured as moving first distance along a first direction；And
The size that the cavity has in said first direction is equal to or more than the first distance.
4. lithographic equipment according to claim 2, in which:
The support construction is configured as moving second distance along the second direction for being different from the first direction；And
The size that the cavity has in this second direction is equal to or more than the second distance.
5. lithographic equipment according to claim 2, wherein the cavity is Chong Die with the support construction in vertical direction.
6. lithographic equipment according to claim 2, wherein the lithographic equipment is configurable to generate the conductive fluid
Keep air-flow in the cavity.
7. lithographic equipment according to claim 2, wherein the lithographic equipment is configurable to generate the conductive fluid
Keep magnetic field in the cavity.
8. lithographic equipment according to claim 1, wherein second electric conductor includes being immersed in the conductive fluid
First part.
9. lithographic equipment according to claim 1 further comprises electrical components, the electrical components are electrically coupled to described second
Electric conductor, and it is coupled to the support construction, so that the electrical components are moved together with the support construction.
10. lithographic equipment according to claim 9, wherein the electrical components include being configured as sending or receiving via institute
State the sensor of the signal of conductive fluid transmission.
11. lithographic equipment according to claim 9, wherein the electrical components include being configured as moving the support construction
Locator.
12. lithographic equipment according to claim 1 further comprises the electrical components for being electrically coupled to first electric conductor.
13. lithographic equipment according to claim 12, wherein the electrical components include being configured as controlling the photoetching setting
The data processing equipment of standby process.
14. lithographic equipment according to claim 1, wherein the conductive fluid includes mercury.
15. lithographic equipment according to claim 1, wherein the conductive fluid includes gallium.
16. lithographic equipment according to claim 1, wherein the conductive fluid includes solvent and electrolyte solute.
17. lithographic equipment according to claim 16, wherein the solvent includes water, and the electrolyte solute includes
Salt.
18. lithographic equipment according to claim 17, wherein the salt includes sodium chloride.
19. lithographic equipment according to claim 1, wherein the support construction includes the substrate for being configured to support substrate
Platform.
20. lithographic equipment according to claim 1, wherein the support construction includes being configured to support patterning apparatus
Mask platform.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662385623P | 2016-09-09 | 2016-09-09 | |
| US62/385,623 | 2016-09-09 | ||
| PCT/EP2017/070896 WO2018046280A1 (en) | 2016-09-09 | 2017-08-18 | Lithographic apparatus and support structures background |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109690406A true CN109690406A (en) | 2019-04-26 |
Family
ID=59656073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780054845.0A Pending CN109690406A (en) | 2016-09-09 | 2017-08-18 | Lithographic equipment and support construction background |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2019529970A (en) |
| KR (1) | KR20190046986A (en) |
| CN (1) | CN109690406A (en) |
| NL (1) | NL2019437A (en) |
| TW (1) | TW201812986A (en) |
| WO (1) | WO2018046280A1 (en) |
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| GB2290658A (en) * | 1994-06-27 | 1996-01-03 | Nikon Corp | Electromagnetic alignment and scanning apparatus |
| CN1550905A (en) * | 2003-05-13 | 2004-12-01 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN1949082A (en) * | 2005-10-14 | 2007-04-18 | 台湾积体电路制造股份有限公司 | Exposure method and apparatus for immersion lithography |
| CN101517490A (en) * | 2006-09-22 | 2009-08-26 | Asml荷兰有限公司 | Apparatus comprising a rotating contaminant trap |
| US20100195074A1 (en) * | 2009-02-04 | 2010-08-05 | Nikon Corporation | Thermal regulation of vibration-sensitive objects |
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|---|---|---|---|---|
| US4445696A (en) * | 1983-02-22 | 1984-05-01 | Ferrofluidics Corporation | Nonbursting magnetic liquid seals for high vacuum applications |
| US6128069A (en) * | 1997-03-13 | 2000-10-03 | Canon Kabushiki Kaisha | Stage mechanism for exposure apparatus |
| JPH11214482A (en) * | 1998-01-28 | 1999-08-06 | Canon Inc | Stage unit, aligner and fabrication of device |
| JP2001311789A (en) * | 2000-04-28 | 2001-11-09 | Matsushita Electric Ind Co Ltd | Precise feeder for moving stage |
| JP2003172338A (en) * | 2001-12-07 | 2003-06-20 | Nippon Densan Corp | Bearing having conducting function |
| US20040004703A1 (en) * | 2002-07-02 | 2004-01-08 | Hazelton Andrew J. | Method and apparatus for reducing rotary stiffness in a support mechanism |
| US7779781B2 (en) * | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20050128449A1 (en) * | 2003-12-12 | 2005-06-16 | Nikon Corporation, A Japanese Corporation | Utilities transfer system in a lithography system |
-
2017
- 2017-08-18 CN CN201780054845.0A patent/CN109690406A/en active Pending
- 2017-08-18 JP JP2019510309A patent/JP2019529970A/en active Pending
- 2017-08-18 KR KR1020197010058A patent/KR20190046986A/en not_active Application Discontinuation
- 2017-08-18 WO PCT/EP2017/070896 patent/WO2018046280A1/en active Application Filing
- 2017-08-23 NL NL2019437A patent/NL2019437A/en unknown
- 2017-08-29 TW TW106129243A patent/TW201812986A/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2290658A (en) * | 1994-06-27 | 1996-01-03 | Nikon Corp | Electromagnetic alignment and scanning apparatus |
| CN1550905A (en) * | 2003-05-13 | 2004-12-01 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN1949082A (en) * | 2005-10-14 | 2007-04-18 | 台湾积体电路制造股份有限公司 | Exposure method and apparatus for immersion lithography |
| CN101517490A (en) * | 2006-09-22 | 2009-08-26 | Asml荷兰有限公司 | Apparatus comprising a rotating contaminant trap |
| US20100195074A1 (en) * | 2009-02-04 | 2010-08-05 | Nikon Corporation | Thermal regulation of vibration-sensitive objects |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190046986A (en) | 2019-05-07 |
| NL2019437A (en) | 2018-03-13 |
| WO2018046280A1 (en) | 2018-03-15 |
| JP2019529970A (en) | 2019-10-17 |
| TW201812986A (en) | 2018-04-01 |
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