CN109690305A - 生物传感器及其制作方法 - Google Patents

生物传感器及其制作方法 Download PDF

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Publication number
CN109690305A
CN109690305A CN201680089091.8A CN201680089091A CN109690305A CN 109690305 A CN109690305 A CN 109690305A CN 201680089091 A CN201680089091 A CN 201680089091A CN 109690305 A CN109690305 A CN 109690305A
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semiconductor layer
biosensor
dielectric layer
layer
bottom gate
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CN201680089091.8A
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徐挽杰
杨喜超
张臣雄
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

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  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Thin Film Transistor (AREA)

Abstract

一种生物传感器及其制作方法，该生物传感器包括：底栅(110)；第一电介质层(140)；线隧穿结构，该线隧穿结构由第一半导体层(161)和第二半导体层(162)部分重叠构成；源极(120)和漏极(130)；第二电介质层(150)；以及生物物质受体(170)，该生物物质受体(170)用于与被探测物结合进行选择性探测。该生物传感器采用采用第一半导体层(161)和第二半导体层(162)重叠构成的线隧穿结构，制作较为容易，由于亚阈值摆幅不受载流子热分布的限制，在室温下可以实现更小的亚阈值摆幅，并且整个重叠区域均是有效信号感测区域，从而提高传感器的灵敏度。另外，采用底栅，可以方便的设置传感器的静态工作点，实现最优的灵敏度性能。

Description

PCT国内申请，说明书已公开。

Claims (10)

  1. PCT国内申请，权利要求书已公开。
CN201680089091.8A 2016-09-07 2016-09-07 生物传感器及其制作方法 Pending CN109690305A (zh)

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PCT/CN2016/098354 WO2018045514A1 (zh) 2016-09-07 2016-09-07 生物传感器及其制作方法

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CN109690305A true CN109690305A (zh) 2019-04-26

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Cited By (2)

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CN110672700A (zh) * 2019-10-18 2020-01-10 广东省半导体产业技术研究院 一种生物电子芯片及其制作方法
CN110672699A (zh) * 2019-09-18 2020-01-10 天津师范大学 全固态场效应晶体管及应用其的生物传感器和检测方法

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GB2579061A (en) * 2018-11-16 2020-06-10 Cambridge Entpr Ltd Field-effect transistor for sensing target molecules
CN109406601A (zh) * 2018-12-06 2019-03-01 清华大学 一种二维材料异质结传感器
CN114507714B (zh) * 2022-04-20 2022-07-05 华中科技大学 一种基于miRNA检测的二维材料半导体传感器制备方法

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CN104345082B (zh) * 2013-08-06 2017-02-15 中国科学院苏州纳米技术与纳米仿生研究所 生物传感器、生物传感器的制作方法及其检测方法

Patent Citations (2)

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US20070295988A1 (en) * 2006-06-26 2007-12-27 Canon Kabushiki Kaisha Dual-gate sensor
EP2897172A1 (en) * 2014-01-17 2015-07-22 IMEC vzw Tunnel field-effect transistor

Non-Patent Citations (4)

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DEBLINA SARKAR 等: "A subthermionic tunnel field-effect transistor with an atomically thin channel", 《NATURE》 *
HONGSUK NAM 等: "Multiple MoS2 Transistors for Sensing Molecule Interaction Kinetics", 《SCIENTIFIC REPORTS》 *
TANIA ROY 等: "2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures", 《APPLIED PHYSICS LETTERS》 *
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110672699A (zh) * 2019-09-18 2020-01-10 天津师范大学 全固态场效应晶体管及应用其的生物传感器和检测方法
CN110672700A (zh) * 2019-10-18 2020-01-10 广东省半导体产业技术研究院 一种生物电子芯片及其制作方法
CN110672700B (zh) * 2019-10-18 2022-06-03 广东省半导体产业技术研究院 一种生物电子芯片及其制作方法

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