CN109686796A - A kind of flexible thin-film transistor and preparation method thereof based on laser technology - Google Patents
A kind of flexible thin-film transistor and preparation method thereof based on laser technology Download PDFInfo
- Publication number
- CN109686796A CN109686796A CN201910173950.7A CN201910173950A CN109686796A CN 109686796 A CN109686796 A CN 109686796A CN 201910173950 A CN201910173950 A CN 201910173950A CN 109686796 A CN109686796 A CN 109686796A
- Authority
- CN
- China
- Prior art keywords
- active layer
- laser
- layer
- film transistor
- flexible thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 41
- 238000005516 engineering process Methods 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000010410 layer Substances 0.000 claims abstract description 109
- 230000002708 enhancing effect Effects 0.000 claims abstract description 37
- 239000011247 coating layer Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000000137 annealing Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 25
- 230000005855 radiation Effects 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 11
- 238000007639 printing Methods 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 30
- 238000000576 coating method Methods 0.000 claims description 27
- 239000011248 coating agent Substances 0.000 claims description 21
- 238000004528 spin coating Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 14
- 238000002207 thermal evaporation Methods 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 12
- 239000012212 insulator Substances 0.000 claims description 12
- 239000011701 zinc Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- 230000001965 increasing effect Effects 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical group 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 8
- 238000007641 inkjet printing Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 239000011135 tin Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 230000006378 damage Effects 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 3
- -1 vapour Substances 0.000 claims description 3
- 150000004703 alkoxides Chemical class 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims description 2
- 229910017053 inorganic salt Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 239000012266 salt solution Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 230000008595 infiltration Effects 0.000 claims 1
- 238000001764 infiltration Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000002679 ablation Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000009466 transformation Effects 0.000 abstract description 3
- 238000010329 laser etching Methods 0.000 abstract description 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000004064 recycling Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 241000931526 Acer campestre Species 0.000 description 6
- 230000005611 electricity Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003204 osmotic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
-
- H01L29/786—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H01L29/66742—
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention relates to a kind of flexible thin-film transistor and preparation method thereof based on laser technology.The present invention increases optics reflection enhancing coating layer on flexible substrate substrate.Simultaneously after having prepared active layer, graphical and device independence is realized using femtosecond/picosecond laser radiation annealing and etching ablation, reflection enhancing coating layer energy effective recycling reflected laser energy, improve the service efficiency of laser energy, the transformation of presoma to oxide is efficiently completed at low temperature, have barrier steam concurrently, the function that oxygen influences active layer, fast low temperature realizes flexible thin-film transistor preparation.The preparation of roll-to-roll or mode of printing can be used in active layer and insulating layer, simple process, quickly, and oxide active layer can realize semiconductor function using femtosecond/picosecond laser etching and radiation annealing mode, it is operated quick and precisely, high efficiency, high performance reproducibility, the size for obtaining device are smaller, device performance consistency is good, is conducive to save the cost and large area production.
Description
Technical field
The invention belongs to electronic material and device arts, are related to a kind of realize based on laser technology and anneal and etching function
The flexible oxide thin film transistor and preparation method thereof of energy.
Background technique
Thin film transistor (TFT) (Thin Film Transistor, TFT) is as a kind of important semiconductor devices, wearable
Value that electronics device, active matrix liquid crystal are shown and the fields such as microsensor have a wide range of applications, it has also become the present age
Indispensable component part in microelectric technique.As the core element of FPD driving, performance quality determines display
Quality.Several important sets such as film transistor device, including semiconductor conducting channel layer, insulating layer, grid and source-drain electrode
At part.TFT in TFT-LCD is usually that the integrated electricity of large-scale semiconductive is made on the non-single crystal substrates such as glass or plastics
Road, by the film-forming process such as physics, chemical deposition formed manufacture integrated circuit necessary to various films, by the processing to film into
The design and fabrication of row circuit.
In recent years, causing people rapidly with the TFT that oxide semiconductor (oxide semiconductor) is active layer
Extensive concern, and the development advanced by leaps and bounds.Main cause is: oxide TFT has high carrier mobility, energy
Meet the requirement of Organic Light Emitting Diode (OLED) pixel driver technology very well；In addition, amorphous oxide TFT has well
Electricity homogeneity, can be prepared with large area；To visible transparent, the aperture opening ratio of display device is improved, sends resolution.It is full
Sufficient roll-to-roll process and printing technology requirement, when solwution method prepares oxide TFT, traditional graph process requirement is by photoetching
The materials such as glue, etching liquid realize the independence of device by complicated step.In addition, to realize presoma to metal oxide half
The transformation of conductor, high-temperature thermal annealing (350 DEG C) are often essential.These factors limit preparation and the quotient of oxide TFT
Industry, high-temperature technology are even more to hinder its further applying in terms of flexible electronic.With the development of electronic product flexibility,
TFT is also required to the flexibility for having certain as main functional component, this, which also just designs it, proposes new challenge with processing.
Summary of the invention
The purpose of the present invention is to provide a kind of preparations that flexible thin-film transistor is realized using femtosecond/picosecond laser technology
Method, by increasing optics reflection enhancing coating layer on flexible substrates, thin film transistor (TFT) active layer film forming after, using femtosecond/
Picosecond laser to active layer film carry out radiation annealing, and then using femtosecond/picosecond laser focus on light beam to annealing thin film into
Row etching ablation, realizes the graphical of active layer.The photoresist and etching liquid for avoiding traditional graph chemical industry skill are to the shadow of active layer
It rings.
To achieve the above object, the technical scheme is that a kind of flexible thin-film transistor based on laser technology, institute
Stating flexible thin-film transistor is bottom gate top contact structure, is followed successively by substrate from the bottom up, reflection enhancing coating layer, grid, insulating layer, has
Active layer, source-drain electrode；The reflection enhancing coating layer is that high low-index material repeats stacking composition with special construction and reflection function
The dielectric layer of energy；When carrying out laser irradiation to active layer, reflection enhancing coating layer reflected laser energy under active layer makes through having
The laser energy of active layer again returns to active layer, promotes active layer to convert to semiconducting behavior, while avoiding high-energy photon to soft
The osmotic injury of property substrate；The flexible thin-film transistor carries out annealing or synchronously to active layer using femtosecond or picosecond laser
Etching realizes graphical, formation free standing film array；The substrate is flexible media substrate, and the grid is graphical film,
The insulating layer is polymer dielectric layer, and the active layer is metal-oxide film, and the source-drain electrode includes source electrode and leakage
Pole.
In an embodiment of the present invention, the reflection enhancing coating layer is situated between by two or more with high refractive index or low-refraction
Matter overlaps multilayer and constitutes, and meeting in a wavelength range has the influence for increasing reflection function and obstructing water, vapour, oxygen to incident laser
Special construction film layer.
In an embodiment of the present invention, the insulating layer is made of organic polymer, with a thickness of 400 ~ 800nm.
In an embodiment of the present invention, the active layer is Zinc oxide-base N-shaped oxide or p-type oxide, by a kind of or
Various metals alkoxide or inorganic salt solution, which are hydrolyzed directly to form colloidal sol or solved to coagulate, forms colloidal sol, followed by preannealing polymerization is solidifying
Gelatinization solute, then by gel drying, removal organic principle, finally obtain material film.
In an embodiment of the present invention, the source-drain electrode is made by thermal evaporation methods；The source-drain electrode material
Material is gold, silver or aluminium；The gate electrode is made by thermal evaporation methods；The gate material is gold, silver or aluminium.
In an embodiment of the present invention, the insulating layer and active layer film are by spin coating, blade coating or inkjet printing
It is prepared by mode, the active layer with a thickness of 10 ~ 30nm.
The flexible thin-film transistor preparation method based on laser technology that the present invention also provides a kind of comprising following steps,
S1: being pasted onto PET, PEN or PI substrate on silicon wafer or glass, and reflection enhancing coating layer is deposited in PET, PEN or PI substrate；
S2: gate electrode pattern is made on reflection enhancing coating layer with mask plate evaporation coating method；S3: pass through spin coating, blade coating or inkjet printing
Mode prepares organic insulator on the film described in step S2；S4: organic by way of spin coating, blade coating or inkjet printing
The p-type oxides such as active layer Zinc oxide-base N-shaped oxide or nickel, tin, copper are prepared on insulating layer；S5: using laser to active layer
Carry out radiation scanning annealing；S6: active layer is performed etching graphically using laser processing platform；S7: using the side of thermal evaporation
Source-drain electrode pattern is deposited out by mask plate on active layer in method.
Flexible thin-film transistor preparation method the present invention also provides another kind based on laser technology comprising following step
Suddenly,
S1: being pasted onto PET, PEN or PI substrate on silicon wafer or glass, and deposits reflection enhancing coating in PET, PEN or PI substrate
Layer；S2: gate electrode pattern is made on reflection enhancing coating layer with mask plate evaporation coating method；S3: pass through the side of spin coating, blade coating or printing
Formula prepares organic insulator on the film described in step S2；S4: in organic insulator by way of spin coating, blade coating or printing
On prepare active layer Zinc oxide-base N-shaped oxide or p-type oxide；S5: specific aim region spoke is carried out to active layer using laser
According to annealing, irradiation zone presoma is made to be changed into metal oxide, rather than irradiation zone still insulate, and realizes material semiconductor function
The independence in energy region；S6: source-drain electrode pattern is deposited out by mask plate on active layer using the method for thermal evaporation.
In an embodiment of the present invention, the processing mode of the reflection enhancing coating layer are as follows: successively alternately heavy on flexible substrates
The certain thickness high refractive index medium of product and low refractive index dielectric；Each layer of thickness meets relationship nHdH=nLdL=λ0/ 4, wherein
D is film thickness, and n is refractive index, λ0For vertical incidence optical maser wavelength.
In an embodiment of the present invention, the active layer annealing and graphical laser used are femtosecond or picosecond laser.
Compared to the prior art, the invention has the following advantages: the flexible thin-film transistor that the present invention makes, general
Reflection enhancing coating layer is embedded on logical transistor arrangement.The preparation of roll-to-roll or mode of printing, technique can be used in active layer and insulating layer
Simply, quickly, and active layer of metal oxide can independent using laser ablation of simultaneously radiation annealing mode realize and partly lead
Body function, operation quick and precisely, high-efficient, the size for obtaining device is smaller, and device performance uniformity is good, be conducive to save at
This and large area produce.
Detailed description of the invention
Fig. 1 is that the present invention is a kind of based on the flexible oxide thin film transistor of femtosecond/picosecond laser technology and its preparation side
The structural schematic diagram of thin film transistor (TFT) employed in method；Wherein, 100 be glass/silicon piece, and 110 be flexible substrates, and 120 be increasing
Reflective coating, 130 be grid, and 140 be insulating layer, and 150 be active layer, and 160 be source-drain electrode.
Fig. 2 (a) is that the present invention is a kind of based on the flexible oxide thin film transistor of femtosecond/picosecond laser technology and its preparation
Multilayer reflection enhancing coating schematic diagram of a layer structure employed in method.Fig. 2 (b) is that the 5 layers of reflection enhancing coating layer optics of application of embodiment 1 are anti-
Penetrate spectrum.
Fig. 3 is that the present invention is a kind of based on the flexible oxide thin film transistor of femtosecond/picosecond laser technology and its preparation side
Whether specific function reflection enhancing coating layer constructive embodiment 1(design reflection enhancing coating layer is increased in method) increasing is not designed instead with embodiment 2(
Penetrate film layer) preparation flexible thin-film transistor electricity transfer characteristic curve.
Specific embodiment
With reference to the accompanying drawing, technical solution of the present invention is specifically described.
As shown in Figure 1-3, a kind of oxide flexible thin-film transistor of the present invention, the oxide thin film transistor
For bottom gate top contact structure, it is followed successively by substrate, reflection enhancing coating layer, grid, insulating layer, active layer, source-drain electrode, institute from the bottom up
Stating substrate is the flexible medias substrates such as PET/PI/PEN, and the reflection enhancing coating layer is that the material with high low-refraction overlaps structure
At, for radiation annealing laser, medium reflection enhancing coating layer has the function of optics Anti-reflective coating, the grid be graphical aluminium/silver/
Gold thin film, the insulating layer are organic polymer, the active layer be the N-shapeds oxide such as metal-oxide film Zinc oxide-base or
The p-type oxides such as nickel, tin, copper, the source-drain electrode include source electrode and drain electrode.
The source-drain electrode is made by thermal evaporation methods；Source-drain electrode materials are gold/silver/aluminium.
The organic insulator is with a thickness of 400 ~ 800nm.
The material that the active layer uses is metal oxide, the p-types oxygen such as the N-shapeds such as Zinc oxide-base oxide or nickel, tin, copper
The solution such as two or more metal alkoxides or inorganic salts are hydrolyzed and directly form colloidal sol or form colloidal sol through solution is solidifying, so by compound
After be preannealing polymeric gel solute, then by gel drying, removal organic principle, finally obtain material film.
The oxide semiconductor thin-film is prepared by way of spin coating, blade coating or inkjet printing, the active layer
With a thickness of 10 ~ 30nm.
Processing mode after the completion of active layer preparation are as follows: by prepared it is active be placed on three axis mobile platforms,
It is with the optical shaping system comprising cylindrical lens that femtosecond/picosecond laser beam adjustment is rectangular, realize the stepless action of light and substance
It anneals with large area.
Active layer processing mode after the annealing are as follows: femtosecond/picosecond laser beam, which is set to focus on three axis mobile platforms, to be had
Active layer sample surfaces realize efficient, high-precision femtosecond/picosecond laser ablation.Ablation path is controlled by computer program, is realized
Active layer it is graphical.
The processing mode of the reflection enhancing coating layer are as follows: the successively certain thickness high refractive index of alternating deposit on flexible substrates
Medium and low refractive index dielectric.
The present invention also provides the preparation methods that a kind of laser ablation and radiation annealing realize flexible thin-film transistor, including
Following steps,
S1: being pasted onto PET/PEN/PI substrate on silicon wafer/glass, and reflection enhancing coating layer is deposited on PET/PEN/PI；
S2: gate electrode pattern is made on reflection enhancing coating layer with mask plate evaporation coating method.
S3: organic insulator is prepared on the film described in step S2 by way of spin coating/blade coating/printing；
S4: by way of spin coating/blade coating/printing organic insulator prepare the N-shapeds such as active layer Zinc oxide-base oxide or nickel,
The p-type oxides such as tin, copper；
S5: radiation scanning annealing is carried out to active layer using femtosecond/picosecond laser；
S6: active layer is performed etching graphically using femtosecond/picosecond laser processing platform；
S7: source-drain electrode pattern is deposited out by mask plate on active layer using the method for thermal evaporation.
It anneals the present invention also provides another laser irradiation and realizes the preparation method of flexible thin-film transistor, including is as follows
Step,
S1: being pasted onto PET/PEN/PI substrate on silicon wafer/glass, and reflection enhancing coating layer is deposited on PET/PEN/PI；
S2: gate electrode pattern is made on reflection enhancing coating layer with mask plate evaporation coating method.
S3: organic insulator is prepared on the film described in step S2 by way of spin coating/blade coating/printing；
S4: by way of spin coating/blade coating/printing organic insulator prepare the N-shapeds such as active layer Zinc oxide-base oxide or nickel,
The p-type oxides such as tin, copper；
S5: specific aim region radiation annealing is carried out to active layer using femtosecond/picosecond laser, is changed into irradiation zone presoma
Metal oxide, rather than irradiation zone still insulate, and realizes the independence of material semiconductor functional area；
S6: source-drain electrode pattern is deposited out by mask plate on active layer using the method for thermal evaporation.
In the production method of above two flexible thin-film transistor, the reflection enhancing coating thickness degree meets relationship nHdH=nLdL
=λ0/ 4, wherein d is film thickness, and n is refractive index, λ0For vertical incidence optical maser wavelength.
The active layer annealing laser used is femtosecond or picosecond laser.
The following are specific embodiments of the present invention.
Embodiment 1
1) silicon wafer/glass that the size of well cutting is about 1.5cm × 2.0cm and the PEN substrate of same size pass through ultrasonic cleaning
It is dried with nitrogen.
2) PEN is pasted on silicon wafer/glass with double-sided adhesive.
3) one layer of TiO is deposited on PEN with Atomic layer deposition method2With two layers of Al2O3/TiO2Alternating it is double-deck, wherein
Al2O3And TiO2Thickness be respectively 122.6 nm and 85.1 nm.Depositing temperature is 120 degree.
4) by the way of thermal evaporation using mask plate special atomic layer deposition it is dielectric multi-layered on "T"-shaped grid are deposited out
Electrode.
5) PVP insulating layer is prepared using spin coating mode on the film surface that step 4) obtains.PVP solution, which is prepared, presses PVP
The mass ratio that powder and crosslinking agent are 10:1, is dissolved in propylene glycol methyl ether acetate (PGMEA) solvent, magnetic agitation 24 hours
And it filters.Spin speed is 2500rpm/min, time 60s.It anneals 2 hours for 120 degree in nitrogen environment.
6) the spin coating IGZO active layer on the PVP prepared.The molar ratio Zn:In:Ga of IGZO solution is 3:6:1, concentration
For 0.2M, spin coating after filtering, speed 2500rpm/min, time 60s, and 120 degree of preheating 20min.
7) radiation annealing is carried out to IGZO active layer with femtosecond laser.
8) ablation is performed etching to the IGZO active layer after annealing with femtosecond laser.
9) a length of using channel is deposited out on the IGZO active layer of mask plate special after annealing by the way of thermal evaporation
50um, width are the source-drain electrode of 50um.
Laser parameter described in step 7) are as follows: optical maser wavelength 800nm, repetition rate 1kHz, pulse width 45fs, power
Density is 80-130mJ/cm2, scanning speed 40-60um/s.
Laser parameter described in step 8) are as follows: optical maser wavelength 800nm, repetition rate 1kHz, pulse width 45fs, power
Density is 350-500mJ/cm2, scanning speed 300-500um/s.
Embodiment 2
1) the PEN substrate of silicon wafer/glass and same size with ITO that the size of well cutting is about 1.5cm × 2.0cm passes through super
The drying of sound nitrogen purge.
2) PEN with ITO is pasted on silicon wafer/glass with double-sided adhesive.
3) PVP insulating layer is prepared using spin coating mode on the ito surface of step 2) PEN.PVP solution, which is prepared, presses PVP powder
The mass ratio for being 10:1 with crosslinking agent, is dissolved in propylene glycol methyl ether acetate (PGMEA) solvent, magnetic agitation 24 hours and mistake
Filter.Spin speed is 2500rpm/min, time 60s.It anneals 2 hours for 120 degree in nitrogen environment.
4) the spin coating IGZO active layer on the PVP prepared.The molar ratio Zn:In:Ga of IGZO solution is 3:6:1, concentration
For 0.2M, spin coating after filtering, speed 2500rpm/min, time 60s, and 120 degree of preheating 20min.
5) radiation annealing is carried out to IGZO active layer with femtosecond laser.
6) ablation is performed etching to the IGZO active layer after annealing with femtosecond laser.
7) a length of using channel is deposited out on the IGZO active layer of mask plate special after annealing by the way of thermal evaporation
50um, width are the source-drain electrode of 50um.
Laser parameter described in step 5) are as follows: optical maser wavelength 800nm, repetition rate 1kHz, pulse width 45fs, power
Density is 80-130mJ/cm2, scanning speed 40-60um/s.
Laser parameter described in step 6) are as follows: optical maser wavelength 800nm, repetition rate 1kHz, pulse width 45fs, power
Density is 350-500mJ/cm2, scanning speed 300-500um/s.
Embodiment 1 and the electricity transfer characteristic curve of oxide thin film transistor prepared by embodiment 2 are as shown in Figure 3.By
Fig. 3 is it is found that after increasing reflection enhancing coating layer, and the mobility of flexible TFT is from 2.13cm2V-1s-1It has been increased to 4.25 cm2V- 1s-1, current on/off ratio obtains larger raising.It is high in femtosecond laser annealing process after main cause is increases reflection enhancing coating layer
Energy laser beam is reflected significantly, is largely mitigated injury of the high-energy photon to flexible substrate, is guaranteed flexibility TFT device junction
The stabilization of structure and interface, while increasing absorption of the active layer to laser energy, improve the service efficiency of laser energy.It effectively facilitates
Transformation of the presoma to metal-oxygen framework, improves the mobility of device.
Above-described embodiment 1 is the preferable embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, it is other it is any without departing from the spirit and principles of the present invention made by change, modification, substitution, combination, letter
Change, should be equivalent substitute mode, be included within the scope of the present invention.
Claims (10)
1. a kind of flexible thin-film transistor based on laser technology, it is characterised in that: the flexible thin-film transistor is bottom gate top
Contact structures are followed successively by substrate, reflection enhancing coating layer, grid, insulating layer, active layer, source-drain electrode from the bottom up；
The reflection enhancing coating layer is the dielectric layer that high low-index material repeats that stacking composition has special construction and reflection function；
When carrying out laser irradiation to active layer, reflection enhancing coating layer reflected laser energy under active layer makes the laser through active layer
Energy again returns to active layer, promotes active layer to convert to semiconducting behavior, while avoiding high-energy photon to the infiltration of flexible substrate
Damage thoroughly；
The flexible thin-film transistor carries out annealing to active layer using femtosecond or picosecond laser or synchronously etching realizes figure
Change, forms free standing film array；
The substrate is flexible media substrate, and the grid is graphical film, and the insulating layer is polymer dielectric layer, described
Active layer is metal-oxide film, and the source-drain electrode includes source electrode and drain electrode.
2. the flexible thin-film transistor according to claim 1 based on laser technology, it is characterised in that: the reflection enhancing coating
Layer overlaps multilayer with high refractive index or low refractive index dielectric by two or more and constitutes, and meets in a wavelength range to incidence
Laser has the special construction film layer for the influence for increasing reflection function and obstructing water, vapour, oxygen.
3. the flexible thin-film transistor according to claim 1 based on laser technology, it is characterised in that: the insulating layer by
Organic polymer is constituted, with a thickness of 400 ~ 800nm.
4. the flexible thin-film transistor according to claim 1 based on laser technology, it is characterised in that: the active layer is
Zinc oxide-base N-shaped oxide or p-type oxide, hydrolyzed by one or more metal alkoxides or inorganic salt solution directly formed it is molten
Glue forms colloidal sol, followed by preannealing polymeric gel solute through solution is solidifying, then by gel drying, removal organic principle, finally
Obtain material film.
5. the flexible thin-film transistor according to claim 1 based on laser technology, it is characterised in that: the source-drain electrode
It is made by thermal evaporation methods；The source-drain electrode materials are gold, silver or aluminium；The gate electrode passes through thermal evaporation methods system
It forms；The gate material is gold, silver or aluminium.
6. the flexible thin-film transistor according to claim 1 based on laser technology, it is characterised in that: the insulating layer and
Active layer film is prepared by way of spin coating, blade coating or inkjet printing, the active layer with a thickness of 10 ~ 30nm.
7. a kind of flexible thin-film transistor preparation method based on laser technology, it is characterised in that: include the following steps,
S1: being pasted onto PET, PEN or PI substrate on silicon wafer or glass, and deposits reflection enhancing coating in PET, PEN or PI substrate
Layer；
S2: gate electrode pattern is made on reflection enhancing coating layer with mask plate evaporation coating method；
S3: organic insulator is prepared on the film described in step S2 by way of spin coating, blade coating or inkjet printing；
S4: active layer Zinc oxide-base N-shaped oxide is prepared on organic insulator by way of spin coating, blade coating or inkjet printing
Or the p-type oxides such as nickel, tin, copper；
S5: radiation scanning annealing is carried out to active layer using laser；
S6: active layer is performed etching graphically using laser processing platform；
S7: source-drain electrode pattern is deposited out by mask plate on active layer using the method for thermal evaporation.
8. a kind of flexible thin-film transistor preparation method based on laser technology, it is characterised in that: include the following steps,
S1: being pasted onto PET, PEN or PI substrate on silicon wafer or glass, and deposits reflection enhancing coating in PET, PEN or PI substrate
Layer；
S2: gate electrode pattern is made on reflection enhancing coating layer with mask plate evaporation coating method；
S3: organic insulator is prepared on the film described in step S2 by way of spin coating, blade coating or printing；
S4: active layer Zinc oxide-base N-shaped oxide or p are prepared on organic insulator by way of spin coating, blade coating or printing
Type oxide；
S5: specific aim region radiation annealing is carried out to active layer using laser, irradiation zone presoma is made to be changed into metal oxidation
Object, rather than irradiation zone still insulate, and realizes the independence of material semiconductor functional area；
S6: source-drain electrode pattern is deposited out by mask plate on active layer using the method for thermal evaporation.
9. the flexible thin-film transistor preparation method according to claim 7 or 8 based on laser technology, it is characterised in that:
The processing mode of the reflection enhancing coating layer are as follows: the successively certain thickness high refractive index medium of alternating deposit and low on flexible substrates
Index medium；Each layer of thickness meets relationship nHdH=nLdL=λ0/ 4, wherein d is film thickness, and n is refractive index, λ0It is vertical
Laser wavelength of incidence.
10. the flexible thin-film transistor preparation method according to claim 7 or 8 based on laser technology, it is characterised in that:
The active layer annealing and graphical laser used are femtosecond or picosecond laser.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810653932.4A CN108831930A (en) | 2018-06-22 | 2018-06-22 | A kind of flexible thin-film transistor and preparation method thereof based on laser technology |
| CN2018106539324 | 2018-06-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109686796A true CN109686796A (en) | 2019-04-26 |
Family
ID=64137901
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810653932.4A Withdrawn CN108831930A (en) | 2018-06-22 | 2018-06-22 | A kind of flexible thin-film transistor and preparation method thereof based on laser technology |
| CN201910173950.7A Pending CN109686796A (en) | 2018-06-22 | 2019-03-08 | A kind of flexible thin-film transistor and preparation method thereof based on laser technology |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810653932.4A Withdrawn CN108831930A (en) | 2018-06-22 | 2018-06-22 | A kind of flexible thin-film transistor and preparation method thereof based on laser technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN108831930A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112420847A (en) * | 2020-10-29 | 2021-02-26 | 深圳技术大学 | Preparation method of flexible InGaZnO thin film transistor |
| CN113223969A (en) * | 2021-04-23 | 2021-08-06 | 武汉理工大学 | Ultrafast laser annealing technology of flexible p/n type semiconductor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050153476A1 (en) * | 2004-01-12 | 2005-07-14 | Samsung Electronics Co., Ltd. | Flexible display and method of manufacturing the same |
| US20060138922A1 (en) * | 2004-12-16 | 2006-06-29 | Kim Yong H | Low temperature active matrix display device and method of fabricating the same |
| US8435832B2 (en) * | 2011-05-26 | 2013-05-07 | Cbrite Inc. | Double self-aligned metal oxide TFT |
| CN103500745A (en) * | 2013-09-25 | 2014-01-08 | 京东方科技集团股份有限公司 | Flexible display substrate and preparation method thereof as well as flexible display device |
| CN105702700A (en) * | 2016-02-02 | 2016-06-22 | 福州大学 | Laser etching technology-based thin film transistor array and manufacturing method therefor |
| CN106128944A (en) * | 2016-07-13 | 2016-11-16 | 深圳市华星光电技术有限公司 | The manufacture method of metal oxide thin-film transistor array base palte |
-
2018
- 2018-06-22 CN CN201810653932.4A patent/CN108831930A/en not_active Withdrawn
-
2019
- 2019-03-08 CN CN201910173950.7A patent/CN109686796A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050153476A1 (en) * | 2004-01-12 | 2005-07-14 | Samsung Electronics Co., Ltd. | Flexible display and method of manufacturing the same |
| US20060138922A1 (en) * | 2004-12-16 | 2006-06-29 | Kim Yong H | Low temperature active matrix display device and method of fabricating the same |
| US8435832B2 (en) * | 2011-05-26 | 2013-05-07 | Cbrite Inc. | Double self-aligned metal oxide TFT |
| CN103500745A (en) * | 2013-09-25 | 2014-01-08 | 京东方科技集团股份有限公司 | Flexible display substrate and preparation method thereof as well as flexible display device |
| CN105702700A (en) * | 2016-02-02 | 2016-06-22 | 福州大学 | Laser etching technology-based thin film transistor array and manufacturing method therefor |
| CN106128944A (en) * | 2016-07-13 | 2016-11-16 | 深圳市华星光电技术有限公司 | The manufacture method of metal oxide thin-film transistor array base palte |
Non-Patent Citations (1)
| Title |
|---|
| CHEN, CH, CHEN, GX,YANG, HH,ZHANG, GC, HU, DB, CHEN, HP, GUO, TL: "Solution-processed metal oxide arrays using femtosecond laser ablation and annealing for thin-film transistors", 《JOURNAL OF MATERIALS CHEMISTRY C》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108831930A (en) | 2018-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8106389B2 (en) | Thin film transistor with semiconductor precursor and liquid crystal display having the same | |
| KR101186740B1 (en) | Method for Fabricating Bank and Organic Thin Film Transistor Having the Bank | |
| TWI312377B (en) | ||
| US8546197B2 (en) | Thin film transistor, method of manufacturing the same, and electronic device | |
| KR102082697B1 (en) | Oxide semiconductor thin film photo transistor and method of manufacturing the same | |
| US9050775B2 (en) | Methods of fabricating transparent and nanomaterial-based conductive film | |
| US7381633B2 (en) | Method of making a patterned metal oxide film | |
| CN105706243A (en) | Metal oxide semiconductor film, thin-film transistor, display device, image sensor, and x-ray sensor | |
| CN105576123A (en) | Full-graphene group flexible organic field-effect transistor and manufacturing method thereof | |
| CN109686796A (en) | A kind of flexible thin-film transistor and preparation method thereof based on laser technology | |
| CN103985764A (en) | Oxide TFT, preparing method of oxide TFT, array substrate and display device | |
| CN111524998A (en) | Solar light blind area Schottky back grid metal oxide semiconductor field effect photoelectric transistor | |
| CN103107286A (en) | Method of producing imaged indium tin oxides (ITO) electrode with non-photoetching technology | |
| KR101926955B1 (en) | Method of manufacturing metal oxide layer, metal oxide layer, thin film transistor and electronic device | |
| KR102115811B1 (en) | Gate insulation film, composition, cured film, semiconductor device, manufacturing method for the semiconductor device, and display device | |
| CN101179016A (en) | Thin-film transistor, active layer manufacturing method and LCD device | |
| Solieman et al. | Patterning of nanoparticulate transparent conductive ITO films using UV light irradiation and UV laser beam writing | |
| CN115440888A (en) | Flexible vertical channel field effect transistor based on metal and dielectric mixed thin film source electrode | |
| KR101820167B1 (en) | Method of fabricating oxide thin film transistor | |
| KR101967564B1 (en) | Method for producing metal oxide semiconductor film, metal oxide semiconductor film, thin film transistor and electronic device | |
| CN110970308B (en) | Thin film transistor and manufacturing method of heterojunction active layer thereof | |
| KR101964225B1 (en) | Display device including flexible transparent electrode and manufacturing method therof | |
| KR101924272B1 (en) | Method for manufacturing metal oxide film, metal oxide film, thin-film transistor, method for manufacturing thin-film transistor, and electronic device | |
| KR101605884B1 (en) | Method for manufacturing thin film transistor using laser | |
| KR101420289B1 (en) | Semiconductor device and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190426 |
|
| RJ01 | Rejection of invention patent application after publication |