CN109686652A - A kind of process for GaN growth - Google Patents
A kind of process for GaN growth Download PDFInfo
- Publication number
- CN109686652A CN109686652A CN201811586320.4A CN201811586320A CN109686652A CN 109686652 A CN109686652 A CN 109686652A CN 201811586320 A CN201811586320 A CN 201811586320A CN 109686652 A CN109686652 A CN 109686652A
- Authority
- CN
- China
- Prior art keywords
- growth
- layer
- substrate
- buffer layer
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 26
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 238000000137 annealing Methods 0.000 claims abstract description 10
- 239000008367 deionised water Substances 0.000 claims abstract description 6
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 150000004767 nitrides Chemical class 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 239000003153 chemical reaction reagent Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 235000011007 phosphoric acid Nutrition 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000003749 cleanliness Effects 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 7
- 238000011109 contamination Methods 0.000 abstract description 4
- 238000012797 qualification Methods 0.000 abstract description 4
- 239000002699 waste material Substances 0.000 abstract description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 abstract description 3
- 239000002253 acid Substances 0.000 abstract description 3
- 239000002245 particle Substances 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004821 distillation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of processes for GaN growth, are related to GaN growth technical field, include the following steps；Step 1), pretreatment；Step 2), growth.Present invention process is simple, substrate is passed through after organic solution wiped clean, using deionized water shower completely again by being dried with nitrogen after soda acid impregnates, effectively optimize substrate surface particle and cleanliness, substrate slice surface cleanliness after annealing reaches no black-white point, no color differnece, without impression of the hand, without contamination, increase product quality, it is bad and the problem of be easy to appear deformation to improve the back side, improve qualification rate, reduce costs waste, using two second buffer layers, the nitrogen polarity gallium nitride in first buffer layer is distilled completely simultaneously, leave the good gallium-polar gallium nitride of crystal quality, to realize the growth of high-quality gallium nitride, increase product overall performance, when buffer layer can be penetrated so as to cause many defects by solving the problems, such as that the crystal quality of conventional buffer layer is poor.
Description
Technical field
The present invention relates to GaN growth technical field, specifically a kind of process for GaN growth.
Background technique
Gallium nitride is a kind of semiconductor with larger forbidden bandwidth, belongs to the column of so-called wide bandgap semiconductor, it is micro-
One of excellent material and blue light luminescent device of wave power transistor have the semiconductor of significant application value.
LED epitaxial wafer generallys use buffer layer technique at present, i.e., deposits one layer of buffer layer regrowth GaN material on substrate
Material, buffer layer can overcome the lattice mismatch between substrate and GaN material to a certain degree, and the defect between them is embedded in buffer layer
Under, but the crystal quality of buffer layer is still poor, still can penetrate buffer layer there are many defect, due to GaN material and lining
Bottom is there are thermal mismatching, and the stress caused by alternating temperature process can be such that these defects expand and penetrate entire epitaxial layer, to influence device
The problem of part performance.Therefore, those skilled in the art provide a kind of process for GaN growth, above-mentioned to solve
The problem of being proposed in background technique.
Summary of the invention
The purpose of the present invention is to provide a kind of processes for GaN growth, to solve in above-mentioned background technique
The problem of proposition.
To achieve the above object, the invention provides the following technical scheme: a kind of process for GaN growth, packet
Include following steps；
Step 1), pretreatment:
S1, wiping cleaning is carried out to substrate surface using organic reagent；
S2, the substrate cleaned out is put into the corrosive liquid after heating and is impregnated, rinsed simultaneously through deionized water after ten minutes
It is handled using being dried with nitrogen；
S3, the substrate of drying is put into temperature in 1000 DEG C of vacuum chamber, is made annealing treatment in a hydrogen atmosphere.
Step 2), growth:
A1, substrate grow nucleating layer at high temperature；
A2, the high growth temperature first layer nitride buffer layer on the surface of nucleating layer, temperature are controlled at 1050 ± 20 degree；
A3, toasted in the atmosphere of hydrogen 2-8 minutes the nitrogen polarity gallium nitride in first layer nitride buffer layer is complete
Distillation, leaves gallium gallium nitride；
A4, temperature is reduced, continues to produce second layer nitride buffer layer on substrate, temperature is controlled in 500-600 degree；
A5, three dimensional growth is carried out, at 1000 ± 20 degree, the time was controlled within 25 minutes for growth temperature control；
A6, two-dimensional growth is carried out to the gallium nitride after three dimensional growth, temperature is controlled at 1100 ± 20 degree, while the time controls
Within 20 minutes；
A7, it anneals in hydrogen atmosphere, obtains finished product after taking out after cooling.
As further scheme of the invention: component of the substrate using oxidation aluminium material in the step 1), thickness
Degree is 600 μm.
As the present invention further scheme: in the step 1) corrosive liquid mixed using hydrogen SO4 and H3PO4 and
At ratio between the two is 3:1.
As the present invention further scheme: the vacuum degree of vacuum chamber is 10-2Pa in the step 1), when pretreatment
Between control at 30 minutes.
As further scheme of the invention: the growth temperature of the nucleating layer in the step 2) is controlled at 650 degree, and
And nucleating layer with a thickness of 50nm.
As the present invention further scheme: first layer nitride buffer layer with a thickness of 20- in the step 2)
40nm, second layer nitride buffer layer with a thickness of 15-25nm.
As the present invention further scheme: annealing temperature control in the step 2) is at 1040 ± 20 degree, the time
Continue 8 minutes.
Compared with prior art, the beneficial effects of the present invention are: present invention process is simple, substrate is wiped by organic solution
After wiping completely, substrate surface is effectively optimized completely again by being dried with nitrogen using deionized water shower after soda acid impregnates
Grain and cleanliness, the substrate slice surface cleanliness after annealing reach no black-white point, no color differnece, no impression of the hand, and no contamination increases production
Quality, it is bad and the problem of be easy to appear deformation to improve the back side, improves qualification rate, waste is reduced costs, using two
Second buffer layer, while the nitrogen polarity gallium nitride in first buffer layer being distilled completely, leave the good gallium polarity nitrogen of crystal quality
Change gallium and increase product overall performance to realize the growth of high-quality gallium nitride, solves the crystal quality of conventional buffer layer
Poor problem when can penetrate buffer layer so as to cause many defects.
Detailed description of the invention
Fig. 1 is a kind of process frame diagram of process for GaN growth.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 1, in the embodiment of the present invention, a kind of process for GaN growth includes the following steps；
Step 1), pretreatment:
S1, wiping cleaning is carried out to substrate surface using organic reagent；
S2, the substrate cleaned out is put into the corrosive liquid after heating and is impregnated, rinsed simultaneously through deionized water after ten minutes
It is handled using being dried with nitrogen；
S3, the substrate of drying is put into temperature in 1000 DEG C of vacuum chamber, is made annealing treatment in a hydrogen atmosphere.
Substrate surface particle and cleanliness effectively are optimized, the substrate slice surface cleanliness after annealing reaches no black and white
Point, no color differnece, no impression of the hand, no contamination increase product quality, and it is bad and the problem of be easy to appear deformation to improve the back side, mention
High qualification rate, reduces costs waste.
Step 2), growth:
A1, substrate grow nucleating layer at high temperature；
A2, the high growth temperature first layer nitride buffer layer on the surface of nucleating layer, temperature are controlled at 1050 ± 20 degree；
A3, toasted in the atmosphere of hydrogen 2-8 minutes the nitrogen polarity gallium nitride in first layer nitride buffer layer is complete
Distillation, leaves gallium gallium nitride；
A4, reduce temperature, continue to produce second layer nitride buffer layer on substrate, temperature control in 500-600 degree, from
And realize the growth of high-quality gallium nitride, increase product overall performance, solve conventional buffer layer crystal quality it is poor from
And problem when causing many defects that can penetrate buffer layer；
A5, three dimensional growth is carried out, at 1000 ± 20 degree, the time was controlled within 25 minutes for growth temperature control；
A6, two-dimensional growth is carried out to the gallium nitride after three dimensional growth, temperature is controlled at 1100 ± 20 degree, while the time controls
Within 20 minutes；
A7, it anneals in hydrogen atmosphere, obtains finished product after taking out after cooling.
Further, the substrate in step 1) is using the component for aoxidizing aluminium material, with a thickness of 600 μm.
Further, corrosive liquid is mixed using hydrogen SO4 and H3PO4 in step 1), and ratio between the two is 3:
1。
Further, the vacuum degree of vacuum chamber is 10-2Pa in step 1), and pretreatment time was controlled at 30 minutes.
Further, the nucleating layer in step 2) growth temperature control at 650 degree, and nucleating layer with a thickness of
50nm。
Further, in step 2) first layer nitride buffer layer with a thickness of 20-40nm, second layer nitride buffer layer
With a thickness of 15-25nm.
Further, the annealing temperature in step 2) is controlled at 1040 ± 20 degree, and the time continues 8 minutes.
In summary: by substrate by being done after soda acid impregnates using deionized water shower after organic solution wiped clean
Only again by being dried with nitrogen, substrate surface particle and cleanliness are effectively optimized, the substrate slice surface cleanliness after annealing reaches
Without black-white point, no color differnece, no impression of the hand, no contamination increases product quality, and it is bad and be easy to appear asking for deformation to improve the back side
Topic, improves qualification rate, reduces costs waste, nitrogenizes using two second buffer layers, while by the nitrogen polarity in first buffer layer
Gallium distils completely, leaves the good gallium-polar gallium nitride of crystal quality, to realize the growth of high-quality gallium nitride, increases production
Product overall performance, when buffer layer can be penetrated so as to cause many defects by solving the problems, such as that the crystal quality of conventional buffer layer is poor.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (7)
1. a kind of process for GaN growth, it is characterised in that include the following steps；
Step 1), pretreatment:
S1, wiping cleaning is carried out to substrate surface using organic reagent；
S2, the substrate cleaned out is put into the corrosive liquid after heating and is impregnated, rinsed and use through deionized water after ten minutes
It is dried with nitrogen processing；
S3, the substrate of drying is put into temperature in 1000 DEG C of vacuum chamber, is made annealing treatment in a hydrogen atmosphere.
Step 2), growth:
A1, substrate grow nucleating layer at high temperature；
A2, the high growth temperature first layer nitride buffer layer on the surface of nucleating layer, temperature are controlled at 1050 ± 20 degree；
A3, it is toasted in the atmosphere of hydrogen 2-8 minutes the nitrogen polarity gallium nitride in first layer nitride buffer layer distils completely,
Leave gallium gallium nitride；
A4, temperature is reduced, continues to produce second layer nitride buffer layer on substrate, temperature is controlled in 500-600 degree；
A5, three dimensional growth is carried out, at 1000 ± 20 degree, the time was controlled within 25 minutes for growth temperature control；
A6, two-dimensional growth is carried out to the gallium nitride after three dimensional growth, temperature is controlled at 1100 ± 20 degree, while time control is 20
Within minute；
A7, it anneals in hydrogen atmosphere, obtains finished product after taking out after cooling.
2. a kind of process for GaN growth according to claim 1, which is characterized in that in the step 1)
Substrate using oxidation aluminium material component, with a thickness of 600 μm.
3. a kind of process for GaN growth according to claim 1, which is characterized in that in the step 1)
Corrosive liquid is mixed using hydrogen SO4 and H3PO4, and ratio between the two is 3:1.
4. a kind of process for GaN growth according to claim 1, which is characterized in that in the step 1)
The vacuum degree of vacuum chamber is 10-2Pa, and pretreatment time was controlled at 30 minutes.
5. a kind of process for GaN growth according to claim 1, which is characterized in that in the step 2)
Nucleating layer growth temperature control at 650 degree, and nucleating layer with a thickness of 50nm.
6. a kind of process for GaN growth according to claim 1, which is characterized in that in the step 2)
First layer nitride buffer layer with a thickness of 20-40nm, second layer nitride buffer layer with a thickness of 15-25nm.
7. a kind of process for GaN growth according to claim 1, which is characterized in that in the step 2)
Annealing temperature control at 1040 ± 20 degree, the time continues 8 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811586320.4A CN109686652A (en) | 2018-12-25 | 2018-12-25 | A kind of process for GaN growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811586320.4A CN109686652A (en) | 2018-12-25 | 2018-12-25 | A kind of process for GaN growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109686652A true CN109686652A (en) | 2019-04-26 |
Family
ID=66189058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811586320.4A Pending CN109686652A (en) | 2018-12-25 | 2018-12-25 | A kind of process for GaN growth |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109686652A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112331752A (en) * | 2020-12-03 | 2021-02-05 | 至芯半导体(杭州)有限公司 | Deep ultraviolet LED epitaxial manufacturing method with low-resistivity P-type layer |
-
2018
- 2018-12-25 CN CN201811586320.4A patent/CN109686652A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112331752A (en) * | 2020-12-03 | 2021-02-05 | 至芯半导体(杭州)有限公司 | Deep ultraviolet LED epitaxial manufacturing method with low-resistivity P-type layer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9799737B2 (en) | Method for forming group III/V conformal layers on silicon substrates | |
| TW459390B (en) | Semiconductor substrate and method for producing the same | |
| CN106128937B (en) | A kind of high quality AlN film of epitaxial growth on a si substrate and preparation method thereof | |
| TW574762B (en) | Method for growing monocrystal GaN on silicon substrate | |
| CN103165444A (en) | High-quality gan high-voltage hfets on silicon | |
| TWI597800B (en) | Gallium nitride to silicon direct wafer bonding | |
| WO2020015765A1 (en) | Ultraviolet waveband metal-doped gallium oxide transparent conductive thin film and preparation method therefor | |
| CN100347822C (en) | Method of manufacturing display device | |
| CN109686652A (en) | A kind of process for GaN growth | |
| CN104846438B (en) | Growth method of aluminum indium nitride film | |
| WO2009119159A1 (en) | Substrate for optical device and method for manufacturing the substrate | |
| CN110896109B (en) | Method for post-treatment and buffer layer deposition of light absorption layer of Cu-based thin film solar cell | |
| Doan et al. | Development of laser lift-off process with a GaN/Al0. 7Ga0. 3N strained-layer superlattice for vertical UVC LED Fabrication | |
| CN106816504B (en) | Semi-polarity AlN film and preparation method thereof based on the face m SiC substrate | |
| DE112019006310T5 (en) | METHOD OF MANUFACTURING A FREE-STANDING POLYCRYSTALLINE DIAMOND SUBSTRATE | |
| CN105097901B (en) | Composite gate dielectric layer applied to iii-v substrate and preparation method thereof | |
| CN106784227B (en) | C surface AlN film and preparation method thereof based on the face c SiC graph substrate | |
| TWI705480B (en) | Method of fabricating a device on a carrier substrate and device on a carrier substrate | |
| CN114121622A (en) | Substrate pretreatment method and semiconductor epitaxial layer growth method | |
| WO2012036177A1 (en) | Surface treatment method for wafer, and production method | |
| JP2002161000A (en) | Method for producing gallium nitride single crystal | |
| CN112820635A (en) | Semiconductor structure, self-supporting gallium nitride layer and preparation method thereof | |
| Li et al. | Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping | |
| CN114267757B (en) | Preparation method of double-polished thin substrate nitride epitaxial layer and epitaxial layer thereof | |
| CN104037285B (en) | A kind of growth GaN film on a si substrate and its preparation method and application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190426 |