CN109676244B - Laser crystallization device - Google Patents
Laser crystallization device Download PDFInfo
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- CN109676244B CN109676244B CN201811208687.2A CN201811208687A CN109676244B CN 109676244 B CN109676244 B CN 109676244B CN 201811208687 A CN201811208687 A CN 201811208687A CN 109676244 B CN109676244 B CN 109676244B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0071—Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/14—Beam splitting or combining systems operating by reflection only
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
Abstract
The present invention relates to a laser crystallization apparatus, the laser crystallization apparatus according to an embodiment of the present invention includes: a light source unit for generating a plurality of input light beams in the form of laser beams; an optical system that converts the input light received from the light source section into at least one output light; and a stage on which an object substrate is disposed and to which the output light is irradiated, the optical system including: a mixing section for dividing and mixing incident light; a first polarization modulation portion arranged between the light source portion and the mixing portion on an optical path; a processing portion that is arranged on the optical path behind the mixing portion and that forms the output light; and a second polarization modulation portion arranged between the processing portion and the mixing portion on the optical path and including at least one quarter-wave plate.
Description
Technical Field
The present invention relates to a laser crystallization apparatus, and more particularly, to a laser crystallization apparatus with improved laser beam stability.
Background
Generally, an electric and electronic element such as a display device is driven by a thin film transistor. In order to use crystalline silicon having advantages such as high mobility as an active layer of a thin film transistor, a process of crystallizing an amorphous polycrystalline thin film, for example, an amorphous silicon thin film, is required.
In order to crystallize an amorphous silicon film into a crystalline silicon film, it is necessary to irradiate a laser with a predetermined energy.
Disclosure of Invention
The invention aims to provide a laser crystallization device for improving the stability of a laser beam.
The laser crystallization apparatus according to an embodiment of the present invention includes: a light source unit for generating at least one input light in the form of a laser beam; an optical system that converts the input light received from the light source section into at least one output light; and a stage on which an object substrate is disposed and to which the output light is irradiated, the optical system including: a mixing part including at least one beam splitter and at least one mirror and dividing incident light into a plurality of beams of light; a first polarization modulation section arranged between the light source section and the mixing section on an optical path and including at least one quarter-wavelength plate that retards a part of incident light by λ/4; a processing portion arranged on the light path behind the mixing portion, including at least one lens, and forming the output light; and a second polarization modulation section arranged between the processing section and the mixing section on the optical path and including at least one quarter-wave plate that retards a part of the light supplied from the mixing section by λ/4.
The first polarization modulation unit converts incident light in a linearly polarized light state into a circularly polarized light state, and the second polarization modulation unit converts incident light in a circularly polarized light state into a linearly polarized light state.
The input light is a solid state laser.
The optical system further includes: a third polarization modulation portion that is arranged between the second polarization modulation portion and the processing portion on the optical path and changes a polarization direction of the light supplied from the second polarization modulation portion.
The third polarization modulation section includes at least one half-wavelength plate.
The third polarization modulation section further includes: and the half-wavelength driver receives an electric signal to control the optical axis of the half-wavelength plate.
The optical system further includes: a fourth polarization modulation section that is arranged between the first polarization modulation section and the light source section on the optical path, and converts the input light supplied from the light source section into a linearly polarized light state.
The input light is an excimer laser.
The fourth polarization modulation section includes at least one linear polarizer.
The first modulated light defined as light converted into a circularly polarized light state by the first polarization modulation section is incident to the mixing section, which includes: a first mirror that changes a direction of the first modulated light; a first beam splitter for reflecting a part of the first modulated light and projecting the remaining part of the first modulated light, thereby splitting the first modulated light into a plurality of mixed lights; and a second mirror that changes a direction of at least a part of the mixed light divided by the first beam splitter.
The processing unit combines the incident plurality of beams to form the at least one output beam.
The processing portions each have a plate shape in which a plurality of lenses are arranged, and include: at least one Homogenizer (homogenerizer) for homogenizing incident light; and at least one Cylindrical lens (Cylindrical lens) for adjusting the size and focus of the light passing through the homogenizer to form a line-shaped light.
The light source section generates first to nth input lights, and first to nth first modulated lights are incident to the mixing section, wherein the first to nth first modulated lights are defined by lights of the first to nth input lights converted into circularly polarized light states by the first polarization modulation section, respectively, and the mixing section includes: a plurality of beam splitters that split the first to nth first modulated lights into n beams, respectively; and a plurality of mirrors that change the direction from the first modulated light to the n-th modulated light, the light divided into n beams by the modulated light and the light divided into n beams by n-1 beams of modulated light other than the one beam of modulated light being mixed in a one-to-one correspondence, where n is a natural number greater than 1.
The first to nth mixed lights defined by the lights emitted from the mixing section have the same mixing ratio with respect to the first to nth first modulated lights. Optical axes of at least two quarter-wave plates of the plurality of quarter-wave plates of the first polarization modulation section are not parallel to each other.
Optical axes of at least two quarter-wave plates of the plurality of quarter-wave plates of the second polarization modulation section are not parallel to each other.
The plurality of input lights oscillate at different times from each other.
The laser crystallization apparatus further includes a time delay part disposed between the processing part and the mesa on the optical path, and the time delay part includes: a delay beam splitter that transmits a part of the light combined in the processing unit and reflects the remaining part; and a plurality of delay mirrors that increase an optical path of light reflected by the time delay beam splitter among the light combined at the processing portion, a half width of output light being increased due to the time delay portion.
The beam splitter transmits 50% of the incident light and reflects the remaining 50%.
The laser crystallization apparatus according to an embodiment of the present invention includes: a light source unit that generates a plurality of laser beams in a linearly polarized light form; a first polarization modulation section arranged on an optical path behind the light source section and converting the laser beam received from the light source section into circularly polarized light; a mixing section arranged on the optical path behind the first polarization modulation section and dividing and mixing the laser beam converted into the circularly polarized light; a second polarization modulation section arranged at the rear of the mixing section on the optical path and converting the laser beam supplied from the mixing section into linearly polarized light; a processing section disposed behind the second polarization modulation section on the optical path, focusing and mixing the laser beams converted into the linearly polarized light, thereby generating output light; and a mesa arranged on the light path behind the processing portion and irradiated with the output light.
According to the embodiment of the invention, the stability of the laser beam can be improved. That is, the laser crystallization apparatus according to an embodiment of the present invention may output a laser beam with improved uniformity of Energy Density (ED).
Drawings
Fig. 1 is a schematic diagram of a laser crystallization apparatus according to an embodiment of the present invention.
Fig. 2 is a schematic diagram illustrating the optical system shown in fig. 1.
Fig. 3 is an enlarged view of the mixing section illustrated in fig. 2.
Fig. 4 is an enlarged view of the processed portion illustrated in fig. 2.
Fig. 5 is a schematic diagram of a laser crystallization apparatus according to another embodiment of the present invention.
Fig. 6 is a schematic diagram of a laser crystallization apparatus according to another embodiment of the present invention.
Fig. 7 is an enlarged view of the mixing section illustrated in fig. 6.
Fig. 8 is a schematic diagram of a laser crystallization apparatus according to another embodiment of the present invention.
Fig. 9 is a schematic diagram of a laser crystallization apparatus according to another embodiment of the present invention.
Fig. 10 is an enlarged view of the time delay section illustrated in fig. 9.
Description of the symbols
1000: laser crystallization apparatus 10: target substrate
100: light source 200: optical system
300: the table top 210: a first polarization modulation part
220: the mixing section 230: a second polarization modulation part
240: processing unit 250: third polarization modulation section
260: fourth polarization modulation unit 270: time delay unit
Detailed Description
The advantages, features and methods for achieving the advantages and features of the present invention will become more apparent with reference to the drawings and the embodiments described in detail below. However, the present invention is not limited to the embodiments disclosed below, which should be embodied in various forms different from each other, and the embodiments are provided only for the purpose of making the disclosure of the present invention more complete and enabling those having ordinary knowledge in the art to which the present invention pertains to fully understand the scope of the present invention, which should be defined by the scope of the claims. Like reference numerals denote like constituent elements throughout the specification.
When elements or layers are described as being "on" or "over" another element or layer, it does not only mean that it is positioned on an upper portion immediately adjacent to the other element or layer, but also includes that other layers or elements are interposed therebetween.
In contrast, when an element is described as being "directly on" or "immediately above," it means that there are no other elements or layers intervening. "and/or" means each and every one or all combinations of more than one of the referenced items.
Spatially relative terms such as "lower", "below", "lower", "above", "upper", and the like may be used for ease of describing a relational relationship between one element or constituent and another element or constituent as shown in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the element in use or operation in addition to the orientation depicted in the figures. Like reference numerals denote like constituent elements throughout the specification.
Although the terms first, second, etc. may be used herein to describe various elements, components and/or assemblies, it should be apparent that these elements, components and/or assemblies are not limited by these terms. These terms are only used to distinguish one element, component or assembly from another element, component or assembly. Therefore, it is apparent that the first element, the first constituent element, or the first component mentioned below may also be the second element, the second constituent element, or the second component within the scope of the technical idea of the present invention.
The embodiments described in this specification will be described with reference to plan and cross-sectional views, which are idealized schematic views of the present invention. Accordingly, variations from the shapes of the illustrations as a function of manufacturing techniques and/or tolerances, etc., may be expected. Thus, embodiments of the present invention are not limited to the particular shapes illustrated, which include variations in shapes resulting from manufacturing processes. Therefore, the regions illustrated in the drawings have schematic properties, and the shapes of the regions illustrated in the drawings are for illustrating specific forms of the element regions, and are not intended to limit the scope of the present invention.
Hereinafter, preferred embodiments of the invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a schematic diagram of a laser crystallization apparatus according to an embodiment of the present invention.
Referring to fig. 1, a laser crystallization apparatus 1000 according to an embodiment of the present invention includes a light source part 100, an optical system 200, and a stage 300.
In the present embodiment, the light source section 100 may generate a laser beam. That is, the light source unit 100 may be a laser generator.
The input light IL may be a solid state laser. That is, the input light IL generated by the light source section 100 may be light in a linearly polarized light state. Illustratively, the input light IL includes light in a P-polarized state and light in an S-polarized state.
The optical system 200 converts the input light IL received from the light source section 100 into at least one output light OL. The optical system 200 is arranged between the stage 300 and the light source portion 100 on the light path, thereby irradiating at least one output light OL to the stage 300. Hereinafter, the optical system 200 will be described in more detail with reference to fig. 2 to 4.
The stage 300 supports the object substrate 10. The output light OL emitted from the optical system 200 can be irradiated to the target substrate 10. The output light OL may crystallize the thin film formed on the upper surface of the object substrate 10.
Specifically, the object substrate 10 may include an Amorphous Silicon Layer (Amorphous Silicon Layer). The target substrate 10 may be formed by a low pressure Chemical Deposition method, an atmospheric pressure Chemical Deposition method, a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, a sputtering method, a vacuum Deposition (vacuum evaporation) method, or the like. The laser crystallization apparatus 1000 according to the present embodiment can crystallize the amorphous Silicon Layer of the target substrate 10 into a polycrystalline Silicon Layer (Poly-crystalline Silicon Layer) by irradiating the output light OL to the target substrate 10.
Although not shown in the drawings, the laser crystallization apparatus 1000 according to another embodiment of the present invention may further include: a table moving part (not shown) is disposed at a lower portion or a side of the table 300 to move the table 300.
The laser crystallization apparatus 1000 according to an embodiment of the present invention may further include at least one direction conversion member M disposed between the optical system 200 and the mesa 300 on the optical path. Illustratively, the direction conversion member M may be a Mirror (Mirror). The direction conversion member M may change the direction of the output light OL provided from the optical system 200 in such a manner that the output light OL is directed toward the stage 300.
Fig. 2 is a schematic diagram illustrating the optical system shown in fig. 1.
Referring to fig. 2, the optical system 200 includes a first polarization modulation section 210, a mixing section 220, a second polarization modulation section 230, and a processing section 240.
The first polarization modulation portion 210 is arranged at the forefront of the optical system 200 on the optical path. The first polarization modulation unit 210 converts the input light IL incident on the first polarization modulation unit 210 into modulated light MLA. The modulated light MLA may be light in a circularly polarized light (circularly polarized light) state.
Specifically, the first polarization modulation part 210 may include at least one quarter-wavelength plate QA that retards a portion of incident light by λ/4. That is, when the input light IL supplied from the light source unit 100 passes through the first polarization modulation unit 210, a part of the input light IL may be circularly polarized light with a retardation of λ/4.
The mixing portion 220 is disposed behind the first polarization modulation portion 210 on the optical path. The mixing part 220 may include at least one beam splitter (beam splitter) and at least one mirror. The mixing section 220 may divide the modulated light MLA incident on the mixing section 220 into two mixed lights DL1 and DL 2. The mixed light DL1, DL2 may have the same Energy density (Energy density). The mixing section 220 will be described in more detail with reference to fig. 3.
The second polarization modulation part 230 is disposed behind the mixing part 220 on the optical path. The second polarization modulation unit 230 can convert the mixed light DL1, DL2 incident on the second polarization modulation unit 230 into post-modulated light MLB1, MLB 2. The rear modulated lights MLB1, MLB2 may be lights in a linearly polarized light state.
Specifically, the second polarization modulation part 230 may include at least one quarter-wave plate QB that retards a portion of the light by λ/4. That is, when the mixed lights DL1 and DL2 supplied from the mixing unit 220 pass through the second polarization modulation unit 230, they are partially delayed by λ/4 and become linearly polarized lights.
The second polarization modulation section 230 illustrated in fig. 2 includes two quarter-wave plates QB. However, the present invention is not limited thereto. In another embodiment of the present invention, the second polarization modulation part 230 may include only one quarter-wave plate QB, so that the two mixed lights DL1, DL2 are incident to the one quarter-wave plate QB.
In the present embodiment, the two quarter-wave plates QB of the second polarization modulation part 230 have optical axes parallel to each other. However, the present invention is not limited thereto. Exemplarily, the two quarter-wave plates QB of the second polarization modulation part 230 according to another embodiment of the present invention may have optical axes different from each other.
The processing portion 240 is arranged behind the second polarization modulation portion 230 on the optical path. Although not shown, the processing part 240 includes at least one lens. The processing unit 240 combines the incident lights to form the output light OL. The output light OL is emitted from the processing unit 240 and is irradiated to the stage 300. Hereinafter, the processing unit 240 will be described in more detail with reference to fig. 4.
Fig. 3 is an enlarged view of the mixing section illustrated in fig. 2.
Referring to fig. 3, the mixing part 220 according to the embodiment of the present invention divides and mixes the incident modulated light MLA to form two mixed lights DL1, DL 2.
The mixing section 220 includes a first mirror M1, a second mirror M2, and a first beam splitter BS 1.
The modulated light MLA converted into circularly polarized light from the first polarization modulation unit 210 enters the first mirror M1 of the mixing unit 220. First mirror M1 reflects incident first modulated light MLA, changing the direction of first modulated light MLA towards first beam splitter BS 1.
The first beam splitter BS1 transmits a part of the incident first modulated light MLA and reflects the remaining part. Illustratively, the first beam splitter BS1 transmits 50% of the first modulated light MLA and reflects 50%. The first mixed light DL1 transmitted by the first beam splitter BS1 exits from the mixing section 220, and the second mixed light reflected by the first beam splitter BS1 is incident on the second mirror M2. The second mirror M2 reflects the incident second mixed light DL2, thereby changing the direction of the second mixed light DL 2. The redirected second mixed light DL2 is emitted from the mixing unit 220.
In fig. 3, two mirrors M1, M2 and one beam splitter BS1 are shown, however, the detailed configuration of the mixing section 220 of the present invention is not particularly limited. According to another embodiment of the present invention, mixing section 220 may include only one mirror M1 and one beam splitter BS1, while mixing section 220 according to yet another embodiment of the present invention may include more than three mirrors and more than two beam splitters BS 1.
Also, in the present embodiment, the mixing part 220 forms two mixed lights DL1, DL2, but in another embodiment of the present invention, the mixing part 220 may form three or more mixed lights.
Fig. 4 is an enlarged view of the processed portion illustrated in fig. 2.
Referring to fig. 4, processing unit 240 combines rear modulated lights MLB1 and MLB2 converted from second polarization modulation unit 230 to form output light OL.
The processing section 240 includes at least one Homogenizer (homogenerizer) 241 and at least one cylindrical lens 242, 243.
The homogenizer 241 has a plate shape in which a plurality of lenses are arranged. The homogenizer 241 homogenizes incident light, thereby uniformly distributing the energy density of the light beam.
The cylindrical lenses 242 and 243 are provided in plurality. The cylindrical lenses 242, 243 adjust the size and focus of light passing through the homogenizer 241 to form output light OL.
Although not shown, the processing part 240 according to another embodiment of the present invention may further include a telescopic lens (not shown). The telescopic lens may be arranged in front of the processing section 240 so as to enlarge the size of each of the modulated lights MLB1, MLB 2.
Unlike the embodiment of the present invention, in the case where the light incident to the mixing section 220 is linearly polarized light, that is, in the case where the light incident to the mixing section 220 includes light in the S-polarized state and light in the P-polarized state, the ratio of division may not be the same within the mixing section 220. That is, the Energy Density (ED) of the mixed light beams DL1 and DL2 divided from the mixing section 20 may not be uniform. However, according to the embodiment of the present invention, the input light IL generated from the light source unit 100 is incident on the first polarization modulation unit 210 and converted into the first modulated light MLA of the circularly polarized light state before being incident on the mixing unit 220. That is, since the light in the circularly polarized light state enters the mixing section 220, the splitting ratio of the beam splitter based on the S/P polarized light state may be different.
Further, according to the present embodiment, the mixed lights DL1 and DL2 divided equally from the mixing unit 220 are linearly polarized again by the second polarization modulation unit 230 and combined in the processing unit 240. Therefore, the output light OL having a more uniform energy density than the input light IL emitted from the conventional light source unit 100 can be emitted to the mesa 300. That is, the crystallization uniformity of the target substrate 10 can be improved.
Fig. 5 is a schematic diagram of a laser crystallization apparatus according to another embodiment of the present invention.
For convenience of explanation, points different from the embodiment according to the present invention will be mainly explained, and omitted portions refer to the embodiment of the present invention. The constituent elements described above are denoted by reference numerals, and redundant description thereof is omitted.
Referring to fig. 5, the optical system 200-1 of the laser crystallization apparatus 1000-1 according to another embodiment of the present invention further includes a third polarization modulation part 250. The third polarization modulation part 250 is disposed between the second polarization modulation part 230 and the processing part 240 on an optical path.
The third polarization modulation section 250 changes the polarization direction of the rear modulated lights MLB1, MLB2 supplied from the second polarization modulation section 230.
Specifically, the third polarization modulation unit 250 retards a part of each of the rear modulated lights MLB1 and MLB2 supplied from the second polarization modulation unit 230 by λ/2. That is, the third polarization modulation part 250 may include at least one half-wavelength plate H. The rear modulated lights MLB1 and MLB2 can be converted into final modulated lights MLC1 and MLC2 by the third polarization modulation unit 250.
Although not shown, the third polarization modulation part 250 according to an embodiment of the present invention may further include: and a half-wavelength driver (not shown) for receiving an electric signal from the outside to control the optical axis of the half-wavelength plate H. The final modulated light MLC1, MLC2 can be converted to the polarization state desired by the user by a half-wavelength driver (not shown). Finally, the modulated lights MLC1, MLC2 enter the processing unit 240.
Fig. 6 is a schematic diagram of a laser crystallization apparatus according to another embodiment of the present invention, and fig. 7 is an enlarged view illustrating a mixing part of fig. 6.
For convenience of explanation, points different from an embodiment of the present invention will be mainly explained, and omitted portions refer to an embodiment of the present invention. The constituent elements described above are denoted by reference numerals, and redundant description thereof is omitted.
Referring to fig. 6 and 7, the light source section 100-2 of the laser crystallization apparatus 1000-2 according to another embodiment of the present invention generates a plurality of input light beams IL1 to IL 4.
For convenience of explanation, the configuration of the four input light beams IL1 to IL4 is exemplarily illustrated in fig. 6 and 7, but the present invention is also applicable to the case of n light beams.
The first to fourth input lights IL1 to IL4 emitted from the light source unit 100 enter the first polarization modulation unit 210. The first polarization modulation unit 210 includes four quarter-wavelength plates QA1 to QA 4. The first input light IL1 to the fourth input light IL4 may be transmitted in one-to-one correspondence with the four quarter-wavelength plates QA1 to QA 4. The transmitted first input light IL1 to fourth input light IL4 are converted into first modulated light MLA1 to fourth modulated light MLA 4.
According to the present embodiment, the optical axes of at least two quarter-wavelength plates among the four quarter-wavelength plates QA1 to QA4 may not be parallel to each other. However, according to another embodiment of the present invention, the four quarter-wave plates QA1 to QA4 may have optical axes parallel to each other, in which case one quarter-wave plate may replace the four quarter-wave plates QA1 to QA 4.
First modulated light MLA1 to fourth modulated light MLA4 enter mixing section 220-2. The incident first through fourth modulated lights MLA1 through MLA4 are divided and mixed by the mixing section 220-2, thereby forming first through fourth mixed lights DL1 through DL 4.
Specifically, the mixing section 220-2 includes first to sixth mirrors M1 to M6 and first to fourth beam splitters BS1 to BS 4. The configuration of the mixing section 220-2 according to the present embodiment is only for an exemplary illustrative configuration, and the present invention is not particularly limited by the number and positions of the mirrors and beam splitters of the mixing section 220-2.
The first modulated light MLA1 is reflected by the first mirror M1 and is incident on the first beam splitter BS 1. The first modulated light MLA1 is divided once by the first beam splitter BS 1. Of the two first split light beams DLA1 obtained by the primary splitting, one first split light beam DLA1 transmitted through the first beam splitter BS1 is incident on the second beam splitter BS2 and is split twice. Of the first split light DLA2 that is split twice by the second beam splitter BS2, one first split light DLA2 that has passed through the second beam splitter BS2 is emitted from the mixing section 220-2. This may be part of the first mixed light DL 1.
The remaining one of the two first split lights DLA1 once split, which is reflected from the first beam splitter BS1, DLA1 is reflected from the second mirror M2. The reflected first split light DLA1 is incident on the third beam splitter BS3 to be split twice. One of the first split light DLA2 which is twice split by the third beam splitter BS3 and passes through the third beam splitter BS3, i.e., the first split light DLA2, is emitted from the mixing section 220-2, which may be a part of the second mixed light DL 2.
The remaining one of the first split light DLA2 reflected from the second beam splitter BS2 out of the first split light DLA2 twice split by the second beam splitter BS2 is reflected by the third mirror M3 and emitted from the mixing section 220-2. This may be part of the third mixed light DL 3.
The remaining one of the first split light DLA2 reflected from the third beam splitter BS3 out of the first split light DLA2 twice split by the third beam splitter BS3 is reflected by the fourth mirror M4 and is emitted from the mixing section 220-2. This may be part of the fourth mixed light DL 4.
The second previously modulated light MLA2 is divided once by the first beam splitter BS 1. Of the two first-split second split lights DLB1, one second split light DLB1 reflected by the first beam splitter BS1 was incident on the second beam splitter BS2 and was split twice. One of the second split light DLB2 transmitted through the second beam splitter BS2 in the second split light DLB2 that is twice split by the second beam splitter BS2 may be a part of the first mixed light DL 1.
The remaining one of the two once-split second split lights DLB1 transmitted through the first beam splitter BS1, DLB1, is reflected from the second mirror M2. The reflected second split light DLB2 is incident on the third beam splitter BS3 and is split twice. Of the second split light DLB2 that is twice split by the third beam splitter BS3, one second split light DLB2 that has passed through the third beam splitter BS3 is emitted from the mixing section 220-2. This may be part of the second mixed light DL 2.
The remaining one of the second split light DLB2 reflected from the second beam splitter BS2 of the second split light DLB2 twice split by the second beam splitter BS2 is reflected by the third mirror M3 and emitted from the mixing section 220-2. This may be part of the third mixed light DL 3.
The remaining one of the second split light DLB2 reflected from the third beam splitter BS3 out of the second split light DLB2 twice split by the third beam splitter BS3 is reflected by the fourth mirror M4 and is emitted from the mixing section 220-2. This may be part of the fourth mixed light DL 4.
Third modulated light MLA3 is reflected by fifth mirror M5 and enters fourth beam splitter BS 4. The third previously modulated light MLA3 is once split by the fourth beam splitter BS 4. Of the two once-divided third divided lights DLC1, one third divided light DLC1 reflected by the fourth beam splitter BS4 is twice-divided by the second beam splitter BS 2. Of the two third split lights DLC2 split by the second beam splitter BS2, one third split light DLC2 reflected from the second beam splitter BS2 is emitted from the mixing section 220-2. This may be part of the first mixed light DL 1.
Of the two third split lights DLC1 split once by the fourth beam splitter BS4, the remaining one third split light DLC1 transmitted through the fourth beam splitter BS1 is reflected by the sixth mirror M6, and then enters the third beam splitter BS3 to be split twice. One beam of the third divided light DLC2 reflected from the third beam splitter BS3 among the third divided light DLC2 divided twice by the third beam splitter BS3 is emitted from the mixing section 220-2. This may be part of the second mixed light DL 2.
Of the two third split lights DLC2 split twice by the second beam splitter BS2, the remaining one third split light DLC2 transmitted through the second beam splitter BS2 is reflected by the third mirror M3 and exits from the mixing section 220-2. This may be part of the third mixed light DL 3.
The remaining one of the third split light DLC2 transmitted through the third beam splitter BS3 in the third split light DLC2 split twice by the third beam splitter BS3 is reflected by the fourth mirror M4 and emitted from the mixing section 220-2. This may be part of the fourth mixed light DL 4.
The fourth firstly modulated light MLA4 is divided once by the fourth beam splitter BS 4. Of the two first-split fourth split light beams DLD1, one fourth split light beam DLD1 transmitted through the fourth beam splitter BS4 is incident on the second beam splitter BS2 and is subjected to secondary splitting. Of the fourth split light DLD2 that is twice split by the second beam splitter BS2, one beam of the fourth split light DLD2 that is reflected by the second beam splitter BS2 is emitted from the mixing section 220-2. This may be part of the first mixed light DL 1.
The remaining one of the fourth split light DLD1 reflected from the fourth beam splitter BS1 among the fourth split light DLD1 once split by the fourth beam splitter BS4 is reflected from the sixth mirror M6, and then is twice split by the third beam splitter BS 3. Of the two fourth split lights DLD2 split twice by the third beam splitter BS3, one fourth split light DLD2 reflected from the third beam splitter BS3 is emitted from the mixing section 220-2. This may be part of the second mixed light DL 2.
The remaining one of the fourth split light DLD2 transmitted through the second beam splitter BS2 out of the fourth split light DLD2 twice split by the second beam splitter BS2 is reflected by the third mirror M3 and emitted from the mixing unit 220-2. This may be part of the third mixed light DL 3.
The remaining one of the two fourth split lights DLD2 which have been split twice by the third beam splitter BS3 and have passed through the third beam splitter BS3, out of the two fourth split lights DLC2, is reflected by the fourth mirror M4 and is emitted from the mixing section 220-2. This may be part of the fourth mixed light DL 4.
As described above, each of the first modulated light MLA1 to the fourth modulated light MLA4 is divided into four divided lights and emitted from the mixing section 220-2. The first split light DLA2 split into four beams by the first modulated light MLA1 is mixed with the second split light to fourth split light split into four beams by the second to fourth modulated lights MLA2 to MLA4, respectively, in one-to-one correspondence. Specifically, one of the first split light DLA2 split into four beams by the first modulated light MLA1 is mixed with one of the second split light DLB2 split into four beams by the second modulated light MLA2, one of the third split light DLC2 split into four beams by the third modulated light MLA3, and one of the fourth split light DLD2 split into four beams by the fourth modulated light MLA4, thereby forming one mixed light DL 1.
According to the present embodiment, the first to fourth beam splitters BS1 to BS4 transmit 50% of incident light and reflect the remaining 50%. That is, since the first modulated light MLA1 to the fourth modulated light MLA4 entering the mixing section 220-2 are light in the circularly polarized light state, the transmission and reflection ratios of the beam splitters BS1 to BS4 based on the S/P polarized state can be the same. Therefore, the first mixed light DL1 to the fourth mixed light DL4 emitted from the mixing section 220-2 can have the same mixing ratio with respect to the first modulated light MLA1 to the fourth modulated light MLA 4.
The first mixed light DL1 to the fourth mixed light DL4 emitted from the mixing unit 220-2 are incident on the second polarization modulation unit 230-2. The second polarization modulation unit 230-2 includes four quarter-wavelength plates QB1 to QB 4. The first to fourth mixed lights DL1 to DL4 may be transmitted in one-to-one correspondence with the four quarter-wave plates QB1 to QB 4. The transmitted first to fourth mixed lights DL1 to DL4 are converted into first to fourth rear modulated lights MLB1 to MLB 4.
According to the present embodiment, the optical axes of at least two quarter-wave plates among the four quarter-wave plates QB1 to QB4 may not be parallel to each other. However, according to another embodiment of the present invention, four quarter-wave plates QB 1-QB 4 may all have the same optical axis, in which case one quarter-wave plate may replace four quarter-wave plates QB 1-QB 4.
Fig. 8 is a schematic diagram of a laser crystallization apparatus according to another embodiment of the present invention.
For convenience of explanation, points different from an embodiment of the present invention will be mainly explained, and omitted portions refer to an embodiment of the present invention. The constituent elements described above are denoted by reference numerals, and redundant description thereof is omitted.
Referring to fig. 8, the input light ILA generated by the light source section 100 of the laser crystallization apparatus 1000-3 according to another embodiment of the present invention may be light in an unpolarized state. Illustratively, the input light ILA according to the present embodiment may be an excimer Laser (Eximer Laser).
Also, the optical system according to the present embodiment further includes a fourth polarization modulation section 260. The fourth polarization modulation part 260 is disposed between the light source part 100 and the first polarization modulation part 210 on the optical path.
The fourth polarization modulation section 260 changes the polarization direction of the input light ILA supplied from the light source section 100. Specifically, the fourth polarization modulation section 260 converts the input light ILA supplied from the light source section 100 into linearly polarized light ILB. Illustratively, the fourth polarization modulation part 260 may include one linear Polarizer (Polarizer) POL.
Fig. 9 is a schematic diagram of a laser crystallization apparatus according to another embodiment of the present invention.
Fig. 10 is an enlarged view of the time delay section illustrated in fig. 9.
For convenience of explanation, points different from an embodiment of the present invention will be mainly explained, and omitted portions refer to an embodiment of the present invention. The constituent elements described above are denoted by reference numerals, and redundant description thereof is omitted.
Referring to fig. 9 and 10, the optical system 200-4 of the laser crystallization apparatus 1000-4 according to another embodiment of the present invention further includes a time delay part 270. The time delay part 270 is arranged between the processing part 240 and the stage 300 on the optical path.
The time delay unit 270 functions as follows: the pre-output light OL1 synthesized in the processing unit 240 is divided so that the emission time of the divided light is different, thereby increasing the oscillation duration of the output light OL2 irradiated to the stage 300. That is, the time delay section 270 according to the present embodiment functions to increase the full width at half maximum (FWHM) of the output light OL 2.
The time delay unit 270 includes at least one delay beam splitter TBS and a plurality of delay mirrors TM1 to TM 4.
The constitution of the time delay section 270 according to the present embodiment is only the constitution for exemplary illustration, and the number and positions of the delay mirrors and the delay beam splitters of the time delay section 270 of the present invention are not limited.
The pre-output light OL1 emitted from the processing unit 240 enters the delay beam splitter TBS of the time delay unit 270. A part of the pre-output light OL1 incident on the delay beam splitter TBS passes through the delay beam splitter TBS and is emitted from the time delay unit 270. Which is defined as first output light OL 2A.
The remaining portion of the pre-output light OL1 incident on the retardation beam splitter TBS is reflected by the retardation beam splitter TBS to be incident on a time delay loop (loop) formed of the first to fourth retardation mirrors TM1 to TM 4. The time delay loop functions to increase the optical path of the incident light and delay the oscillation time. Specifically, a part of the pre-output light OL1 reflected from the delaying beam splitter TBS is sequentially reflected by the first to fourth delaying mirrors TM1 to TM4 and re-incident to the delaying beam splitter TBS. Of the light incident on the delay beam splitter TBS through the time delay loop, a part of the light reflected by the delay beam splitter TBS is emitted from the time delay unit 270, and the remaining part of the light transmitted through the delay beam splitter TBS is incident again on the time delay loop constituted by the first delay mirror TM1 to the fourth delay mirror TM 4. The light output through the time delay loop is defined as second output light OL 2B.
In the present embodiment, the number n of times that the pre-output light OL1 of one oscillation is incident to the time delay loop through the delay beam splitter TBS is not particularly limited. Illustratively, n may be 3 or more and 5 or less.
According to the present embodiment, the first output light OL2A and the second output light OL2B oscillate with a time difference, so the oscillation duration of the output light OL2 can be increased. That is, according to the present embodiment, the time delay unit 270 expands the oscillation duration of the output light OL2, and thus the target substrate 10 can be crystallized more easily.
Although not shown in the drawings, according to another embodiment of the present invention, the light source section 100 may be made to include a plurality of input lights, and the input lights may be all oscillated at different times, thereby increasing the half width of the output light OL. According to the present embodiment, the plurality of input light beams IL generated from the light source unit 100 are oscillated with a time difference, instead of the time delay unit 270.
Although the present invention has been described with reference to the embodiments, those skilled in the art will appreciate that various modifications and changes can be made to the present invention without departing from the spirit and scope of the present invention as set forth in the appended claims. Also, the disclosed embodiments of the present invention are not intended to limit the technical ideas of the present invention, and the scope of the claims and all technical ideas within the scope equivalent thereto should be construed to be included in the scope of the claims of the present invention.
Claims (9)
1. A laser crystallization apparatus, comprising:
a light source unit for generating at least one input light in the form of a laser beam;
an optical system that converts the input light received from the light source section into at least one output light; and
a table on which an object substrate is disposed and which is irradiated with the output light,
the optical system includes:
a mixing part including at least one beam splitter and at least one mirror and dividing incident light into a plurality of beams of light;
a first polarization modulation part disposed between the light source part and the mixing part on an optical path and including at least one quarter-wave plate that converts light in a linearly polarized light state of the incident light into a circularly polarized light state with a retardation of λ/4;
a processing portion arranged on the light path behind the mixing portion, including at least one lens, and forming the output light; and
a second polarization modulation section arranged between the processing section and the mixing section on the optical path, and including at least one quarter-wavelength plate converting light in a circularly polarized light state supplied from the mixing section into a linearly polarized light state with a retardation of λ/4.
2. The laser crystallization apparatus according to claim 1,
the input light is a solid state laser.
3. The laser crystallization apparatus according to claim 1,
the optical system further includes:
a third polarization modulation portion that is arranged between the second polarization modulation portion and the processing portion on the optical path and changes a polarization direction of the light supplied from the second polarization modulation portion.
4. The laser crystallization apparatus according to claim 3,
the third polarization modulation section includes at least one half-wavelength plate.
5. The laser crystallization apparatus according to claim 4,
the third polarization modulation section further includes: and the half-wavelength driver receives an electric signal to control the optical axis of the half-wavelength plate.
6. The laser crystallization apparatus according to claim 1,
the optical system further includes:
a fourth polarization modulation section that is arranged between the first polarization modulation section and the light source section on the optical path, and converts the input light supplied from the light source section into a linearly polarized light state.
7. The laser crystallization apparatus according to claim 6,
the input light is an excimer laser.
8. The laser crystallization apparatus according to claim 6,
the fourth polarization modulation section includes at least one linear polarizer.
9. The laser crystallization apparatus according to claim 1,
the light source section generates first to nth input lights,
first through nth first modulated lights are incident on the mixing unit, wherein the first through nth first modulated lights are defined by lights in which the first through nth input lights are converted into circularly polarized light states by the first polarization modulation unit, respectively,
the mixing section includes:
a plurality of beam splitters that split the first to nth first modulated lights into n beams, respectively; and
a plurality of mirrors that change the direction of the first through nth first modulated lights,
light divided into n beams by one modulated light beam and light divided into n beams by n-1 modulated light beams other than the one modulated light beam are mixed in a one-to-one correspondence manner, where n is a natural number greater than 1.
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| KR1020170134799A KR102384289B1 (en) | 2017-10-17 | 2017-10-17 | Laser crystalling apparatus |
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| CN110265289B (en) * | 2019-06-25 | 2022-03-08 | 京东方科技集团股份有限公司 | Excimer laser annealing device and preparation method of polycrystalline silicon film |
| KR102287988B1 (en) * | 2019-11-06 | 2021-08-09 | 광주과학기술원 | Manufacturing Technology of Lithium Secondary Battery Electrode Treated by Laser and Lithium Secondary Battery Using the Same |
| KR102331321B1 (en) * | 2020-02-12 | 2021-11-26 | 주식회사 이오테크닉스 | Flat-top laser apparatus having variable pulse width and method of operating the same |
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| KR102384289B1 (en) | 2022-04-08 |
| KR20190043191A (en) | 2019-04-26 |
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