CN109676244A - Laser crystallization equipment - Google Patents
Laser crystallization equipment Download PDFInfo
- Publication number
- CN109676244A CN109676244A CN201811208687.2A CN201811208687A CN109676244A CN 109676244 A CN109676244 A CN 109676244A CN 201811208687 A CN201811208687 A CN 201811208687A CN 109676244 A CN109676244 A CN 109676244A
- Authority
- CN
- China
- Prior art keywords
- light
- modulation
- mixing unit
- polarisation
- laser crystallization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005499 laser crystallization Methods 0.000 title claims abstract description 39
- 230000003287 optical effect Effects 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000010287 polarization Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 230000011218 segmentation Effects 0.000 description 55
- 239000000470 constituent Substances 0.000 description 15
- 230000005540 biological transmission Effects 0.000 description 12
- 102100025222 CD63 antigen Human genes 0.000 description 10
- 101000934368 Homo sapiens CD63 antigen Proteins 0.000 description 10
- 101000908706 Homo sapiens Dynein light chain 2, cytoplasmic Proteins 0.000 description 10
- 101000647991 Homo sapiens StAR-related lipid transfer protein 13 Proteins 0.000 description 10
- 102100025252 StAR-related lipid transfer protein 13 Human genes 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 101100170553 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DLD2 gene Proteins 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 101001053992 Homo sapiens Deleted in lung and esophageal cancer protein 1 Proteins 0.000 description 4
- 101000966403 Homo sapiens Dynein light chain 1, cytoplasmic Proteins 0.000 description 4
- 101001063878 Homo sapiens Leukemia-associated protein 1 Proteins 0.000 description 4
- 101001106322 Homo sapiens Rho GTPase-activating protein 7 Proteins 0.000 description 4
- 102100030893 Leukemia-associated protein 1 Human genes 0.000 description 4
- 102100021446 Rho GTPase-activating protein 7 Human genes 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 101150042537 dld1 gene Proteins 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 101000573526 Homo sapiens Membrane protein MLC1 Proteins 0.000 description 3
- 101000635885 Homo sapiens Myosin light chain 1/3, skeletal muscle isoform Proteins 0.000 description 3
- 102100030739 Myosin light chain 4 Human genes 0.000 description 3
- 102100026925 Myosin regulatory light chain 2, ventricular/cardiac muscle isoform Human genes 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 108010065781 myosin light chain 2 Proteins 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000009514 concussion Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000029553 photosynthesis Effects 0.000 description 2
- 238000010672 photosynthesis Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
- H01S3/0071—Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/14—Beam splitting or combining systems operating by reflection only
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Laser Beam Processing (AREA)
- Recrystallisation Techniques (AREA)
- Polarising Elements (AREA)
Abstract
The present invention relates to a kind of Laser crystallization equipment, the Laser crystallization equipment of embodiment according to the present invention includes: light source portion, generates the multi beam input light of laser beam form;Optical system will be converted at least a branch of output light from the received input light in the light source portion;And table top, it is mounted with object substrate, and the illuminated output light, the optical system include: mixing unit, incident light is divided and mixed;First polarisation modulation portion is arranged between the light source portion and the mixing unit on light path;Processing department, is arranged in the rear of the mixing unit on the light path, and forms the output light;And the second polarisation modulation portion, it is arranged on the light path between the processing department and the mixing unit, and including at least one quarter wave plate.
Description
Technical field
The present invention relates to a kind of Laser crystallization equipment more particularly to a kind of laser crystallizations for the stability for improving laser beam
Device.
Background technique
In general, the electric electronic elements such as display device are driven by thin film transistor (TFT).In order to have high movement
The crystalline silicon for the advantages that spending be used as thin film transistor (TFT) active layer, need to carry out it is a kind of by noncrystalline polycrystal film, for example, amorphous
The process of silicon thin film crystallization.
In order to be crystal silicon thin film by amorphous silicon membrane crystallization, need with scheduled energy exposure laser.
Summary of the invention
The purpose of the present invention is to provide a kind of Laser crystallization equipments of stability for improving laser beam.
The Laser crystallization equipment of embodiment according to the present invention includes: light source portion, generates at least a branch of of laser beam form
Input light;Optical system will be converted at least a branch of output light from the received input light in the light source portion;And table top,
It is mounted with object substrate, and the illuminated output light, the optical system include: mixing unit, including at least one beam splitting
Device and at least one mirror, and incident light is divided into multi-beam;First polarisation modulation portion is arranged in described on light path
Between light source portion and the mixing unit, and at least one quarter-wave including making a part delay λ/4 of incident light
Long slab;Processing department is arranged in the rear of the mixing unit on the light path, and including at least one lens, and forms institute
State output light;And the second polarisation modulation portion, it is arranged on the light path between the processing department and the mixing unit,
And at least one quarter wave plate including making a part delay λ/4 of the light provided from the mixing unit.
The light of incident linearly polarized light state is converted to circularly polarized light state by the first polarisation modulation portion, and described second
The light of incident circularly polarized light state is converted to linearly polarized light state by polarisation modulation portion.
The input light is Solid State Laser.
The optical system further include: third polarisation modulation portion is arranged in the second polarisation tune on the light path
Between portion processed and the processing department, and change the polarization direction of the light provided from the second polarisation modulation portion.
The third polarisation modulation portion includes at least one half-wave plate.
The third polarisation modulation portion further include: half-wave elongated drive receives electric signal and controls the half-wave plate
Optical axis.
The optical system further include: the 4th polarisation modulation portion is arranged in the first polarisation tune on the light path
Between portion processed and the light source portion, and the input light provided from the light source portion is converted into linearly polarized light state.
The input light is excimer laser.
The 4th polarisation modulation portion includes at least one linear polarization device.
It is defined as being incident on by the first modulation light for the light that the first polarisation modulation portion is converted to circularly polarized light state described
Mixing unit, the mixing unit include: the first mirror, change the direction of the first modulation light;First beam splitter, reflection is described first to adjust
A part reflection of light processed, and it is de- to throw remaining a part, so that the first modulation light is divided into multi beam mixed light;And
Second mirror changes at least part of direction in the mixed light divided by first beam splitter.
Incident multi beam photosynthesis is formed at least a branch of output light by the processing department.
The processing department is respectively provided with the plate shape as made of multiple lens arrangements, and includes: at least one homogenizer
(Homogenizer), for homogenizing incident light;And at least one cylindrical lens (Cylindrical lens), it adjusts
By the size and focus of the light of the homogenizer, to form the light of line morphology.
The light source portion generates the first input light to the n-th input light, and the first first modulation light is incident to the n-th first modulation light
To the mixing unit, wherein the described first first modulation light to the n-th first modulation light is by first input light to n-th input
Light is respectively converted into the light of circularly polarized light state by the first polarisation modulation portion to define, also, the mixing unit packet
Include: the described first first modulation light to the described n-th first modulation light is divided into n beam by multiple beam splitters respectively;And multiple mirrors,
Change the described first first modulation light to the direction of the described n-th first modulation light, by modulation light be divided into the light of n beam with by addition to described
N-1 beam modulation light other than a branch of modulation light is divided into the light of n beam to mix in a manner of corresponding one to one respectively, and wherein n is
Natural number greater than 1.
The first mixed light to the n-th mixed light defined by the light projected from the mixing unit relative to the first first modulation light to
N-th first modulation light mixing ratio having the same.In the multiple quarter wave plate of the first polarisation modulation portion extremely
The optical axis of few two quarter wave plates is not parallel each other.
At least two quarter wave plates in the multiple quarter wave plate of the second polarisation modulation portion
Optical axis it is each other and not parallel.
The multi beam input light is shaken in the time different from each other.
Laser crystallization equipment further includes the time being arranged between the processing department and the table top on the light path
Delay portion, and the time delay portion includes: delay beam splitter, makes a part transmission of the light synthesized in the processing department,
And make remaining a part reflection;And multiple delay mirrors, increase in the light that the processing department synthesizes by the time
Postpone the light path of the light of beam splitter reflection, the half-breadth of output light increases due to the time delay portion.
The beam splitter makes 50% in incident light to penetrate, and makes remaining 50% reflection.
The Laser crystallization equipment of embodiment according to the present invention includes: light source portion, and the multi beam for generating linearly polarized light form swashs
Light beam;First polarisation modulation portion, is arranged in the rear in the light source portion on light path, and makes from received institute, the light source portion
It states laser beam and is converted to circularly polarized light;Mixing unit is arranged in the rear of the first polarisation modulation portion on the light path, and
It is converted into the laser beam segmentation and mixing of the circularly polarized light;Second polarisation modulation portion, is arranged on the light path
In the rear of the mixing unit, and the laser beam provided from the mixing unit is made to be converted to linearly polarized light;Processing department, in institute
The rear for being arranged in the second polarisation modulation portion on light path is stated, the laser beam focus of the linearly polarized light is converted into
And mix, to generate output light;And table top, the rear of the processing department is arranged on the light path, and shone
Penetrate the output light.
According to an embodiment of the invention, can be improved the stability of laser beam.That is, the laser of embodiment according to the present invention
Crystallization system can export the laser beam for improving the uniformity of energy density (Energy Density:ED).
Detailed description of the invention
Fig. 1 is the schematical ideograph of the Laser crystallization equipment of embodiment according to the present invention.
Fig. 2 is the schematical ideograph for being illustrated in the optical system of Fig. 1.
Fig. 3 is the enlarged drawing for being illustrated in the mixing unit of Fig. 2.
Fig. 4 is the enlarged drawing for being illustrated in the processing department of Fig. 2.
Fig. 5 is the schematical ideograph of Laser crystallization equipment according to another embodiment of the present invention.
Fig. 6 is the schematical ideograph of Laser crystallization equipment according to another embodiment of the present invention.
Fig. 7 is the enlarged drawing for being illustrated in the mixing unit of Fig. 6.
Fig. 8 is the schematical ideograph of Laser crystallization equipment according to another embodiment of the present invention.
Fig. 9 is the schematical ideograph of Laser crystallization equipment according to another embodiment of the present invention.
Figure 10 is the enlarged drawing for being illustrated in the time delay portion of Fig. 9.
Symbol description
1000: Laser crystallization equipment 10: object substrate
100: light source portion 200: optical system
300: 210: the first polarisation modulation portion of table top
220: 230: the second polarisation modulation portion of mixing unit
240: processing department 250: third polarisation modulation portion
260: the four polarisation modulation portions 270: time delay portion
Specific embodiment
Referring to attached drawing and the embodiment being described in detail below, can definitely advantages of the present invention, feature and
For realizing the advantage and the method for feature.However the invention is not limited to embodiments disclosed below, should be presented as
The form of multiplicity different from each other, the purpose for providing the embodiment, which is only in that, keeps disclosure of the invention more complete, and makes
The technical staff with general knowledge level completely understands the scope of the present invention in the technical field of the invention, and of the invention
It should be defined by the range of claims.Throughout the specification, identical drawing reference numeral indicates that identical composition is wanted
Element.
When element (elements) either layer be described as be in another element or layer " upper (on) " or " on
(on) " when, not only indicate to be located at situation with another element or the adjacent top of layer, further include centre be folded with other layers or
The situation of element.
On the contrary, being indicated when element is described as be in " (directly on) directly above " or " immediately above "
Centre is without sandwiched other elements or the situation of layer."and/or" indicate each of items for being previously mentioned or more than one
All combinations.
" under (below) ", " lower section (beneath) ", " lower part (lower) ", " top (above) ", " top (upper) "
It can be for ease of a description element as illustrated in the diagram or constituent element and another element or structure Deng relative terms spatially
It is used at the correlativity between element.It should be understood that other than the direction described in attached drawing, spatially opposite
Term also include element different direction in use or in operation.Throughout the specification, identical drawing reference numeral table
Show identical constituent element.
Although using the terms such as first, second in order to describe various elements, constituent element and/or component, it is apparent that this
A little elements, constituent element and/or component should not be limited by these terms.These terms are only used to want an element, composition
Element or component are distinguished with another element, constituent element or component.Therefore, within the scope of the technical idea of the present invention, below
First element, the first constituent element or the first assembly mentioned can also be second element, the second constituent element or the second component,
This is obvious.
Come referring to the plan view and cross-sectional view as Utopian schematic diagram of the invention to reality described in this specification
Example is applied to be illustrated.Accordingly, it is possible to lead to the variation of the shape of diagram according to manufacturing technology and/or tolerance etc..Therefore, of the invention
Embodiment be not limited to diagram specific shape comprising by manufacturing process generate shape variation.Therefore, in attached drawing
The region shown has schematical attribute, and the shape in region shown in the accompanying drawings is used to show the specific shape of element area
State, the range being not intended to limit the present invention.
Hereinafter, the preferred embodiment of invention is described in detail with reference to the accompanying drawings.
Fig. 1 is the schematical ideograph of the Laser crystallization equipment of embodiment according to the present invention.
Referring to Fig.1, the Laser crystallization equipment 1000 of embodiment according to the present invention includes light source portion 100, optical system 200
With table top (stage) 300.
In the present embodiment, light source portion 100 can produce laser beam.That is, light source portion 100 can be laser generator.
Input light IL can be Solid State Laser.That is, the input light IL generated by light source portion 100 can be linearly polarized light state
Light.Illustratively, input light IL includes the light of P polarized condition and the light of S polarized condition.
Optical system 200 will be converted at least a branch of output light OL from the received input light IL in light source portion 100.Optical system
200 are arranged between table top 300 and light source portion 100 on light path, to irradiate at least a branch of output light OL to table top 300.
Hereinafter, optical system 200 is described in more detail hereinafter with reference to Fig. 2 to Fig. 4.
Table top 300 supports object substrate 10.The output light OL projected from optical system 200 can be irradiated to object substrate
10.Output light OL can make the film crystallization for being formed in the upper surface of object substrate 10.
Specifically, object substrate 10 may include amorphous silicon layer (Amorphous Silicon Layer).Object substrate
10 can pass through low-pressure chemical deposition, normal pressure chemical sedimentation, plasma enhanced chemical vapor deposition (PECVD:Plasma
Enhanced Chemical Vapor Deposition) method, sputtering (sputtering) method, vacuum deposition (vacuum
Evaporation) the methods of method formation.It can be by being shone to object substrate 10 according to the Laser crystallization equipment 1000 of the present embodiment
It penetrates output light OL and is polysilicon layer (Poly-crystal Silicon Layer) by the amorphous silicon layer crystallization of object substrate 10.
Although not shown in figures, Laser crystallization equipment 1000 according to another embodiment of the present invention can also be wrapped
Include: portion's (not shown) of moving playing surface is arranged in the lower part or side of table top 300, so that table top 300 is mobile.
The Laser crystallization equipment 1000 of embodiment according to the present invention can also include being arranged in optical system on light path
At least one changes direction end part M between system 200 and table top 300.Illustratively, changes direction end part M can be mirror
(Mirror).Changes direction end part M can by so that from optical system 200 provide output light OL towards table top 300 in a manner of change
Become the direction of output light OL.
Fig. 2 is the schematical ideograph for being illustrated in the optical system of Fig. 1.
Referring to Fig. 2, optical system 200 includes the first polarisation modulation portion 210, mixing unit 220, the second polarisation modulation portion 230
With processing department 240.
First polarisation modulation portion 210 is arranged in the forefront of optical system 200 on light path.First polarisation modulation portion
The input light IL for being incident on the first polarisation modulation portion 210 is converted to first modulation light MLA by 210.It is inclined that first modulation light MLA can be circle
The light of light (the circularly polarized light) state of vibration.
Specifically, the first polarisation modulation portion 210 may include at least one for making a part delay λ/4 of incident light
Quarter wave plate QA.That is, the input light IL provided by light source portion 100 is when through the first polarisation modulation portion 210, one portion
Divide delay λ/4 and circularly polarized light can be become.
Mixing unit 220 is arranged in the rear of the first polarisation modulation portion 210 on light path.Mixing unit 220 may include to
A few beam splitter (beam splitter) and at least one mirror.Mixing unit 220 can will be incident on mixing unit 220
First modulation light MLA is divided and forms two beam mixed light DL1, DL2.Mixed light DL1, DL2 can have identical energy density
(Energy Dencity).Mixing unit 220 will be hereinafter described in detail referring to Fig. 3.
Second polarisation modulation portion 230 is arranged in the rear of mixing unit 220 on light path.Second polarisation modulation portion 230 can
Mixed light DL1, DL2 for being incident on the second polarisation modulation portion 230 are converted to rear modulation light MLB1, MLB2.Modulation light afterwards
MLB1, MLB2 can be the light of linearly polarized light state.
Specifically, the second polarisation modulation portion 230 may include make light a part delay λ/4 at least one four/
One wavelength plate QB.That is, from mixed light DL1, DL2 that mixing unit 220 provides when passing through the second polarisation modulation portion 230, a part
Postpone λ/4 and linearly polarized light can be become.
It includes two quarter wave plate QB that the second polarisation modulation portion 230 is illustrated as in Fig. 2.However, the present invention is not
It is limited to this.In another embodiment of the invention, the second polarisation modulation portion 230 can only include a quarter wave plate
QB, so that two beam mixed light DL1, DL2 are incident on a quarter wave plate QB.
In the present embodiment, two quarter wave plate QB of the second polarisation modulation portion 230 have light parallel to each other
Axis.However, the present invention is not limited to this.Illustratively, the second polarisation modulation portion 230 according to another embodiment of the present invention
Two quarter wave plate QB can have optical axis different from each other.
Processing department 240 is arranged in the rear of the second polarisation modulation portion 230 on light path.Although it is not shown, still processing
Portion 240 includes at least one lens.Incident photosynthesis is formed output light OL by processing department 240.Output light OL is from processing department
240 project, to be irradiated to table top 300.Hereinafter, processing department 240 is described in detail hereinafter with reference to Fig. 4.
Fig. 3 is the enlarged drawing for being illustrated in the mixing unit of Fig. 2.
Referring to Fig. 3, incident first modulation light MLA is divided and is mixed by the mixing unit 220 of embodiment according to the present invention, from
And form two beam mixed light DL1, DL2.
Mixing unit 220 includes the first mirror M1, the second mirror M2 and the first beam splitter BS1.
The first modulation light MLA for being converted to circularly polarized light from the first polarisation modulation portion 210 is incident on the first mirror of mixing unit 220
Sub- M1.First mirror M1 makes incident first modulation light MLA reflection, to being changed in the direction of first modulation light MLA towards first
Beam splitter BS1.
First beam splitter BS1 makes a part transmission in incident first modulation light MLA, and makes remaining a part reflection.
Illustratively, the first beam splitter BS1 makes the 50% of first modulation light MLA to transmit, and makes 50% reflection.It is saturating by the first beam splitter BS1
The the first mixed light DL1 penetrated is projected from mixing unit 220, and is incident on the by the second mixed light that the first beam splitter BS1 reflects
Two mirror M2.Second mirror M2 makes incident the second mixed light DL2 reflection, to change the direction of the second mixed light DL2.Change
The second mixed light DL2 in direction is projected from mixing unit 220.
In fig. 3 it is shown that two mirrors M1, M2 and a beam splitter BS1, however mixing unit 220 of the invention is thin
Portion constitutes and is not limited particularly.According to another embodiment of the present invention, mixing unit 220 can only comprising a mirror M1 and
One beam splitter BS1, and mixing unit 220 according to still another embodiment of the invention may include three or more mirrors and two
A above beam splitter BS1.
Also, in the present embodiment, mixing unit 220 forms two beam mixed light DL1, DL2, but in another reality of the invention
It applies in example, mixing unit 220 can form the mixed light of three beams or more.
Fig. 4 is the enlarged drawing for being illustrated in the processing department of Fig. 2.
Referring to Fig. 4, processing department 240 synthesizes rear modulation light MLB1, MLB2 converted from the second polarisation modulation portion 230 and shape
At output light OL.
Processing department 240 include at least one homogenizer (Homogenizer) 241 and at least one cylindrical lens 242,
243。
Homogenizer 241 has the plate shape as made of multiple lens arrangements.Homogenizer 241 homogenizes incident light, thus
It is uniformly distributed beam energy density.
Cylindrical lens 242,243 is equipped to multiple.Cylindrical lens 242,243 adjusts the size of the light by homogenizer 241
Output light OL is formed with focus.
Although it is not shown, still processing department 240 according to another embodiment of the present invention can also include telephoto lens
(Telescope lens, be not shown).Telephoto lens can be arranged in the front of processing department 240, thus modulation light after amplification
The respective size of MLB1, MLB2.
Differently with the embodiment of the present invention, in the case where being incident on the light of mixing unit 220 is the light of linearly polarized light,
That is, in the case that the light for being incident on mixing unit 220 includes the light of S polarized condition and the light of P polarized condition, in mixing unit 220
The ratio of segmentation may not be identical.That is, from the energy density (Energy between mixed light DL1, DL2 that mixing unit 20 is divided
It Density:ED) may be uneven.However according to an embodiment of the invention, the input light IL generated from light source portion 100 is in incidence
To before mixing unit 220, it is incident on the first polarisation modulation portion 210 and is converted to the first modulation light MLA of circularly polarized light state.That is,
Since the light of circularly polarized light state is incident on mixing unit 220, the ration of division of the beam splitter based on S/P polarized condition may not
It is identical.
Also, according to the present embodiment, from mixed light DL1, DL2 of the identical Ground Split of mixing unit 220 due to the second polarisation tune
Portion 230 processed and become linearly polarized light again, and be synthesized in processing department 240.It therefore, can be close to 300 irradiation energy of table top
Spend the output light OL more more uniform than the input light IL irradiated from previous light source portion 100.I.e., it is possible to improve object substrate 10
The crystallization uniformity.
Fig. 5 is the schematical ideograph of Laser crystallization equipment according to another embodiment of the present invention.
For ease of description, it is illustrated, and omits to based on the point for being different from an embodiment according to the present invention
Partly referring to one embodiment of the invention.Also, to constituent element described above and with drawing reference numeral, and omits and be directed to
The repeated explanation of the constituent element.
It is also wrapped referring to Fig. 5, the optical system 200-1 of Laser crystallization equipment 1000-1 according to another embodiment of the present invention
Include third polarisation modulation portion 250.Third polarisation modulation portion 250 is arranged in the second polarisation modulation portion 230 and processing on light path
Between portion 240.
Third polarisation modulation portion 250 changes the polarisation of rear modulation light MLB1, MLB2 provided from the second polarisation modulation portion 230
Direction.
Specifically, third polarisation modulation portion 250 make from the second polarisation modulation portion 230 provide rear modulation light MLB1,
MLB2 respective a part delay λ/2.That is, third polarisation modulation portion 250 may include at least one half-wave plate H.After modulate
Light MLB1, MLB2 can be converted to last modulation light MLC1, MLC2 by third polarisation modulation portion 250.
Although it is not shown, the third polarisation modulation portion 250 of embodiment according to the present invention can also include: half-wavelength driving
Device (not shown), from the external optical axis for receiving electric signal and controlling half-wave plate H.It, can by half-wave elongated drive (not shown)
Last modulation light MLC1, MLC2 is converted to polarized condition required for user.Last modulation light MLC1, MLC2, which is incident on, to be added
The Ministry of worker 240.
Fig. 6 is the schematical ideograph of Laser crystallization equipment according to another embodiment of the present invention, and Fig. 7 is figure
It is shown in the enlarged drawing of the mixing unit of Fig. 6.
For ease of description, to be different from one embodiment of the invention point based on and be illustrated, and omit portion
Divide referring to one embodiment of the invention.Also, to constituent element described above and with drawing reference numeral, and omit for described
The repeated explanation of constituent element.
Referring to figure 6 and figure 7, the light source portion 100-2 of Laser crystallization equipment 1000-2 according to another embodiment of the present invention
Generate multi beam input light IL1~IL4.
For ease of description, the composition about four beam input light IL1~IL4 is illustratively illustrated in Fig. 6 and Fig. 7, but
It is the situation that the present invention may be equally applicable for n light beams.
The the first input light IL1 to the 4th input light IL4 projected from light source portion 100 is incident on the first polarisation modulation portion 210.
First polarisation modulation portion 210 includes four quarter wave plate QA1~QA4.First input light IL1 to the 4th input light IL4
It can accordingly be transmitted one to one with four quarter wave plate QA1~QA4.First input light IL1 to the 4th of transmission
Input light IL4 is converted to the first modulation light MLA4 of the first elder generation modulation light MLA1 to the 4th.
According to the present embodiment, the light of at least two quarter wave plates in four quarter wave plate QA1~QA4
Axis can be not parallel each other.However, according to another embodiment of the present invention, four quarter wave plate QA1~QA4 can have
Have optical axis parallel to each other, in the case, a quarter wave plate can replace four quarter wave plate QA1~
QA4。
The first elder generation elder generation of modulation light MLA1 to the 4th modulation light MLA4 is incident on mixing unit 220-2.Incident first is first modulated
The elder generation modulation light MLA4 of light MLA1 to the 4th is divided and is mixed by mixing unit 220-2, thus the first mixed light DL1 of formation to the
Four mixed light DL4.
Specifically, mixing unit 220-2 includes the first mirror M1 to the 6th mirror M6 and the first beam splitter BS1 to the 4th
Beam splitter BS4.It is only intended to the composition illustratively illustrated according to the composition of the mixing unit 220-2 of the present embodiment, the present invention is simultaneously
It is not limited to the mirror of mixing unit 220-2 and the quantity of beam splitter and position especially.
First elder generation modulation light MLA1 is reflected by the first mirror M1 and is incident on the first beam splitter BS1.First first modulation light
MLA1 is once divided by the first beam splitter BS1.In the two beams first segmentation light DLA1 after primary segmentation, through the first beam splitter
A branch of first segmentation light DLA1 of BS1 is incident on the second beam splitter BS2 and obtains secondary splitting.By the second beam splitter BS2 bis- times
A branch of first segmentation light DLA2 of the second beam splitter BS2 of transmission in first segmentation light DLA2 of segmentation is penetrated from mixing unit 220-2
Out.This can be a part of the first mixed light DL1.
Once divided two beams first segmentation light DLA1 in from the first beam splitter BS1 reflect remaining a branch of first
Segmentation light DLA1 is reflected from the second mirror M2.The the first segmentation light DLA1 reflected is incident on third beam splitter BS3 and obtains two
Secondary segmentation.By third beam splitter BS3 secondary splitting first segmentation light DLA2 in through a branch of the first of third beam splitter BS3
Divide light DLA2 to project from mixing unit 220-2, this can be a part of the second mixed light DL2.
By remaining reflected from the second beam splitter BS2 in the first segmentation light DLA2 of the second beam splitter BS2 secondary splitting
It is a branch of first segmentation light DLA2 by third mirror M3 reflect and from mixing unit 220-2 project.This can be third mixed light DL3
A part.
Remaining reflected by the slave third beam splitter BS3 in the first segmentation light DLA2 of third beam splitter BS3 secondary splitting
It is a branch of first segmentation light DLA2 by the 4th mirror M4 reflect and from mixing unit 220-2 injection.This can be the 4th mixed light DL4
In a part.
Second elder generation modulation light MLA2 is once divided by the first beam splitter BS1.Two beams second after primary segmentation divide light
In DLB1, a branch of second segmentation light DLB1 reflected from the first beam splitter BS1 is incident on the second beam splitter BS2 and obtains secondary point
It cuts.By a branch of second segmentation of the second beam splitter BS2 of transmission in the second segmentation light DLB2 of the second beam splitter BS2 secondary splitting
Light DLB2 can be a part in the first mixed light DL1.
Remaining a branch of second point of the first beam splitter BS1 of transmission in two beams second segmentation light DLB1 once divided
Light DLB1 is cut to reflect from the second mirror M2.Reflected second segmentation light DLB2 be incident on third beam splitter BS3 and by secondary point
It cuts.By a branch of second segmentation through third beam splitter BS3 in the second segmentation light DLB2 of third beam splitter BS3 secondary splitting
Light DLB2 is projected from mixing unit 220-2.This can be a part of the second mixed light DL2.
By remaining reflected from the second beam splitter BS2 in the second segmentation light DLB2 of the second beam splitter BS2 secondary splitting
It is a branch of second segmentation light DLB2 by third mirror M3 reflect and from mixing unit 220-2 project.This can be third mixed light DL3
A part.
Remaining reflected by the slave third beam splitter BS3 in the second segmentation light DLB2 of third beam splitter BS3 secondary splitting
It is a branch of second segmentation light DLB2 by the 4th mirror M4 reflect and from mixing unit 220-2 injection.This can be the 4th mixed light DL4
A part.
Third elder generation modulation light MLA3 is reflected by the 5th mirror M5 and is incident on the 4th beam splitter BS4.Third elder generation modulation light
MLA3 is once divided by the 4th beam splitter BS4.In two beam thirds segmentation light DLC1 after primary segmentation, by the 4th beam splitter BS4
A branch of third segmentation light DLC1 of reflection is by the second beam splitter BS2 secondary splitting.The two beam thirds divided by the second beam splitter BS2
Divide a branch of third reflected from the second beam splitter BS2 in light DLC2 and divides light DLC2 from mixing unit 220-2 injection.This can be with
It is a part of the first mixed light DL1.
The two beam thirds once divided by the 4th beam splitter BS4 divide its of the 4th beam splitter BS1 of transmission in light DLC1
Remaining a branch of third segmentation light DLC1 is reflected from the 6th mirror M6, is incident on third beam splitter BS3 later and is obtained secondary splitting.
The a branch of third segmentation reflected by the slave third beam splitter BS3 in the third segmentation light DLC2 of third beam splitter BS3 secondary splitting
Light DLC2 is projected from mixing unit 220-2.This can be a part of the second mixed light DL2.
By its of the second beam splitter BS2 of transmission in the two beam thirds segmentation light DLC2 of the second beam splitter BS2 secondary splitting
Remaining a branch of third segmentation light DLC2 is reflected and projected from mixing unit 220-2 by third mirror M3.This can be third mixed light
A part of DL3.
By third beam splitter BS3 secondary splitting third segmentation light DLC2 in through third beam splitter BS3 remaining
A branch of third segmentation light DLC2 is reflected and projected from mixing unit 220-2 by the 4th mirror M4.This can be the 4th mixed light DL4's
A part.
4th elder generation modulation light MLA4 is once divided by the 4th beam splitter BS4.Two beams the 4th after primary segmentation divide light
In DLD1, the second beam splitter BS2 is incident on through a branch of 4th segmentation light DLD1 of the 4th beam splitter BS4 and obtains secondary point
It cuts.By a branch of 4th point reflected by the second beam splitter BS2 in the 4th segmentation light DLD2 of the second beam splitter BS2 secondary splitting
Light DLD2 is cut to project from mixing unit 220-2.This can be a part of the first mixed light DL1.
Remaining reflected from the 4th beam splitter BS1 in the 4th segmentation light DLD1 once divided by the 4th beam splitter BS4
It is a branch of 4th segmentation light DLD1 reflected from the 6th mirror M6, later by third beam splitter BS3 secondary splitting.By third beam splitter
BS3 secondary splitting two beams the 4th segmentation light DLD2 in slave third beam splitter BS3 reflection it is a branch of 4th segmentation light DLD2 from
Mixing unit 220-2 is projected.This can be a part of the second mixed light DL2.
By remaining of the second beam splitter BS2 of transmission in the 4th segmentation light DLD2 of the second beam splitter BS2 secondary splitting
A branch of 4th segmentation light DLD2 is reflected and projected from mixing unit 220-2 by third mirror M3.This can be third mixed light DL3's
A part.
By third beam splitter BS3 secondary splitting two beams the 4th segmentation light DLC2 in through third beam splitter BS3 its
Remaining a branch of 4th segmentation light DLD2 is reflected and projected from mixing unit 220-2 by the 4th mirror M4.This can be the 4th mixed light
A part of DL4.
As described above, the first elder generation modulation light MLA1 to the 4th elder generation modulation light MLA4 be divided into respectively four beams segmentation light and from
Mixing unit 220-2 is projected.First segmentation light DLA2 of four beams is divided by the first elder generation modulation light MLA1 and by the second first modulation light
The elder generation of MLA2 to the 4th modulation light MLA4 is divided into the second of four beams to divide light to the 4th segmentation light respectively and accordingly mixes one to one
It closes.Specifically, be divided into four beams by the first elder generation modulation light MLA1 first divides a branch of first adjusting with by second in light DLA2
Light MLA2 processed is divided into the third a branch of, that four beams are divided by third elder generation modulation light MLA3 in the second segmentation light DLB2 of four beams
Segmentation light DLC2 in it is a branch of and by the 4th elder generation modulation light MLA4 be divided into four beams the 4th divide light DLD2 in it is a branch of mix
It closes, to form a branch of mixed light DL1.
According to the present embodiment, the first beam splitter BS1 to the 4th beam splitter BS4 makes 50% transmission in incident light, and makes
Remaining 50% reflection.That is, since the first elder generation elder generation of modulation light MLA1 to the 4th modulation light MLA4 for being incident on mixing unit 220-2 is
The light of circularly polarized light state, so the respective transmission of beam splitter BS1~BS4 based on S/P polarized condition and reflection ratio can be with
It is identical.Therefore, it can first be modulated relative to first from the first mixed light DL1 to the 4th mixed light DL4 that mixing unit 220-2 is projected
The elder generation modulation light MLA4 of light MLA1 to the 4th and mixing ratio having the same.
The the first mixed light DL1 to the 4th mixed light DL4 projected from mixing unit 220-2 is incident on the second polarisation modulation portion
230-2.Second polarisation modulation portion 230-2 includes four quarter wave plate QB1~QB4.First mixed light DL1 to the 4th is mixed
Light combination DL4 can accordingly be transmitted one to one with four quarter wave plate QB1~QB4.First mixed light DL1 of transmission
Modulation light MLB4 after modulation light MLB1 to the 4th after being converted to first to the 4th mixed light DL4.
According to the present embodiment, the light of at least two quarter wave plates in four quarter wave plate QB1~QB4
Axis can be not parallel each other.However, according to another embodiment of the present invention, four quarter wave plate QB1~QB4 can be complete
Portion have identical optical axis, in the case, a quarter wave plate can replace four quarter wave plate QB1~
QB4。
Fig. 8 is the schematical ideograph of Laser crystallization equipment according to another embodiment of the present invention.
For ease of description, to be different from one embodiment of the invention point based on and be illustrated, and omit portion
Divide referring to one embodiment of the invention.Also, to constituent element described above and with drawing reference numeral, and omit for described
The repeated explanation of constituent element.
Referring to Fig. 8, caused by the light source portion 100 of Laser crystallization equipment 1000-3 according to another embodiment of the present invention
Input light ILA can be the light of no polarized condition.Illustratively, it can be quasi-molecule according to the input light ILA of the present embodiment to swash
Light (Eximer Laser).
Also, the optical system according to the present embodiment further includes the 4th polarisation modulation portion 260.4th polarisation modulation portion 260
It is arranged on light path between light source portion 100 and the first polarisation modulation portion 210.
4th polarisation modulation portion 260 changes the polarization direction of the input light ILA provided by light source portion 100.Specifically, the
The input light ILA provided from light source portion 100 is converted to the light ILB of line polarisation by four polarisation modulation portions 260.Illustratively, the 4th
Polarisation modulation portion 260 may include linear polarization device (Polarizer) POL.
Fig. 9 is the schematical ideograph of Laser crystallization equipment according to another embodiment of the present invention.
Figure 10 is the enlarged drawing for being illustrated in the time delay portion of Fig. 9.
For ease of description, to be different from one embodiment of the invention point based on and be illustrated, and omit portion
Divide referring to one embodiment of the invention.Also, to constituent element described above and with drawing reference numeral, and omit for described
The repeated explanation of constituent element.
Referring to Fig. 9 and Figure 10, the optical system of Laser crystallization equipment 1000-4 according to another embodiment of the present invention
200-4 further includes time delay portion 270.Time delay portion 270 is arranged between processing department 240 and table top 300 on light path.
It plays following effect in time delay portion 270: the pre-output light OL1 synthesized in processing department 240 being divided, to make
The injection time of divided light is different, to increase the duration of oscillation for being irradiated to the output light OL2 of table top 300.That is, root
Play the role of increasing the half-breadth (FWHM) of output light OL2 according to the time delay portion 270 of the present embodiment.
Time delay portion 270 includes at least one delay beam splitter TBS and multiple delay mirror TM1~TM4.
It is only used for the composition of exemplary illustration according to the composition in the time delay portion 270 of the present embodiment, it is of the invention
The delay mirror in time delay portion 270 and the quantity of delay beam splitter and position are not limited.
The pre-output light OL1 projected from processing department 240 is incident on the delay beam splitter TBS in time delay portion 270.It is incident on
The a part for postponing the pre-output light OL1 of beam splitter TBS is projected through delay beam splitter TBS from time delay portion 270.Its quilt
It is defined as the first output light OL2A.
Be incident on delay beam splitter TBS pre-output light OL1 remaining a part be delayed by beam splitter TBS reflection and it is incident
Postpone the time delay loop (loop) that mirror TM4 is constituted to by the first delay mirror TM1 to the 4th.Time delay loop plays
Increase the light path of incident light and delays to shake the effect of time.Specifically, the pre-output reflected from delay beam splitter TBS
A part of light OL1 postpones mirror TM4 by reflecting continuously by the first delay mirror TM1 to the 4th, and is incident on delay again and divides
Beam device TBS.Be delayed by beam splitter TBS reflection one being incident on by time delay loop in the light of delay beam splitter TBS
Part light is projected from time delay portion 270, and is again incident on through remaining a part of light of delay beam splitter TBS by first
Postpone mirror TM1 to the 4th and postpones the time delay loop that mirror TM4 is constituted.The light exported by time delay loop is determined
Justice is the second output light OL2B.
In the present embodiment, the pre-output light OL1 once shaken is incident on time delay ring by postponing beam splitter TBS
The frequency n on road is not limited particularly.Illustratively, n can be 3 or more and 5 or less.
According to the present embodiment, the first output light OL2A and the second output light OL2B shake in a manner of with the time difference, because
This can increase the concussion duration of output light OL2.That is, time delay portion 270 expands output light OL2 according to the present embodiment
The concussion duration, so as to more easily make 10 crystallization of object substrate.
Although not shown in figures, according to another embodiment of the present invention, can make light source portion 100 includes multi beam
Input light, and shake input light all in different times, to increase the half-breadth of output light OL.According to this implementation
Example shakes the multi beam input light IL generated from light source portion 100 in a manner of with the time difference, so as to replace the time
The effect of delay portion 270.
More than, be illustrated referring to embodiment, but in the art skilled artisans will appreciate that, Neng Gou
The modification and change for carrying out multiplicity in the range of the thought and field of the invention recorded in claims to the present invention are not departed from
More.Also, disclosed embodiment of this invention is not intended to limit technical idea of the invention, and the range of claims
It should all be interpreted to be included in interest field of the invention with all technical ideas in the range that is equal with this.
Claims (10)
1. a kind of Laser crystallization equipment, wherein include:
Light source portion generates at least a branch of input light of laser beam form;
Optical system will be converted at least a branch of output light from the received input light in the light source portion;And
Table top is mounted with object substrate, and is irradiated by the output light,
The optical system includes:
Mixing unit, including at least one beam splitter and at least one mirror, and incident light is divided into multi-beam;
First polarisation modulation portion is arranged between the light source portion and the mixing unit on light path, and including making incidence
At least one quarter wave plate of a part delay λ/4 of light;
Processing department is arranged in the rear of the mixing unit on the light path, and including at least one lens, and described in formation
Output light;And
Second polarisation modulation portion, is arranged between the processing department and the mixing unit on the light path, and including make from
At least one quarter wave plate of a part delay λ/4 for the light that the mixing unit provides.
2. Laser crystallization equipment as described in claim 1, wherein
The light of incident linearly polarized light state is converted to circularly polarized light state, second polarisation by the first polarisation modulation portion
The light of incident circularly polarized light state is converted to linearly polarized light state by modulation portion.
3. Laser crystallization equipment as claimed in claim 2, wherein
The input light is Solid State Laser.
4. Laser crystallization equipment as claimed in claim 2, wherein
The optical system further include:
Third polarisation modulation portion is arranged between the second polarisation modulation portion and the processing department on the light path, and
The polarization direction of the light provided from the second polarisation modulation portion is provided.
5. Laser crystallization equipment as claimed in claim 4, wherein
The third polarisation modulation portion includes at least one half-wave plate.
6. Laser crystallization equipment as claimed in claim 5, wherein
The third polarisation modulation portion further include: half-wave elongated drive receives electric signal and controls the optical axis of the half-wave plate.
7. Laser crystallization equipment as claimed in claim 2, wherein
The optical system further include:
4th polarisation modulation portion is arranged between the first polarisation modulation portion and the light source portion on the light path, and
The input light provided from the light source portion is converted into linearly polarized light state.
8. Laser crystallization equipment as claimed in claim 7, wherein
The input light is excimer laser.
9. Laser crystallization equipment as claimed in claim 7, wherein
The 4th polarisation modulation portion includes at least one linear polarization device.
10. Laser crystallization equipment as described in claim 1, wherein
The light source portion generates the first input light to the n-th input light,
First first modulation light to the n-th first modulation light is incident on the mixing unit, wherein the described first first modulation light is first adjusted to n-th
Light processed is to be respectively converted into circular polarization by the first polarisation modulation portion by first input light to n-th input light
The light of light state defines,
The mixing unit includes:
Described first first modulation light to the described n-th first modulation light is divided into n beam by multiple beam splitters respectively;And
Multiple mirrors, the first modulation light of change described first to the direction of the described n-th first modulation light,
It is divided into the light of n beam to divide respectively with by the n-1 beam modulation light other than a branch of modulation light by a branch of modulation light
It is mixed in a manner of corresponding one to one at the light of n beam, wherein n is the natural number greater than 1.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2017-0134799 | 2017-10-17 | ||
KR1020170134799A KR102384289B1 (en) | 2017-10-17 | 2017-10-17 | Laser crystalling apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109676244A true CN109676244A (en) | 2019-04-26 |
CN109676244B CN109676244B (en) | 2022-06-07 |
Family
ID=66184525
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811208687.2A Active CN109676244B (en) | 2017-10-17 | 2018-10-17 | Laser crystallization device |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR102384289B1 (en) |
CN (1) | CN109676244B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110265289A (en) * | 2019-06-25 | 2019-09-20 | 京东方科技集团股份有限公司 | The preparation method of quasi-molecule laser annealing device, polysilicon membrane |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102287988B1 (en) * | 2019-11-06 | 2021-08-09 | 광주과학기술원 | Manufacturing Technology of Lithium Secondary Battery Electrode Treated by Laser and Lithium Secondary Battery Using the Same |
KR102331321B1 (en) * | 2020-02-12 | 2021-11-26 | 주식회사 이오테크닉스 | Flat-top laser apparatus having variable pulse width and method of operating the same |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1448753A (en) * | 2002-03-28 | 2003-10-15 | 三菱电机株式会社 | Optical system with laser beam uniform irradiation |
AU2002359205A1 (en) * | 2002-12-19 | 2004-07-14 | Telefonaktiebolaget Lm Ericsson (Publ) | Flexible optical cabling |
KR20050009532A (en) * | 2003-07-16 | 2005-01-25 | 삼성에스디아이 주식회사 | Flat panel display device comprising polysilicone thin film transistor and method thereof |
TW200528223A (en) * | 2004-02-26 | 2005-09-01 | Ultratech Inc | Laser scanning apparatus and methods for thermal processing |
CN1691278A (en) * | 2004-03-11 | 2005-11-02 | 株式会社液晶先端技术开发中心 | Laser crystallization apparatus and laser crystallization method |
US20060105585A1 (en) * | 2004-11-12 | 2006-05-18 | Applied Materials, Inc. | Autofocus for high power laser diode based annealing system |
TW200818323A (en) * | 2006-06-27 | 2008-04-16 | Applied Materials Inc | Dynamic surface annealing using addressable laser array with pyrometry feedback |
CN101208778A (en) * | 2005-09-14 | 2008-06-25 | 株式会社Ihi | Laser annealing method and device |
TW200828410A (en) * | 2006-08-31 | 2008-07-01 | Semiconductor Energy Lab | Method for manufacturing crystalline semiconductor film and semiconductor device |
US20080280458A1 (en) * | 2007-05-11 | 2008-11-13 | Sony Corporation | Irradiating apparatus, semiconductor device manufacturing apparatus, semiconductor device manufacturing method, and display device manufacturing method |
CN101866058A (en) * | 2005-01-21 | 2010-10-20 | 株式会社尼康 | Polarization conversion device |
CN103797564A (en) * | 2011-11-04 | 2014-05-14 | 应用材料公司 | Optical design for line generation using microlens array |
CN104283099A (en) * | 2013-07-10 | 2015-01-14 | 三星显示有限公司 | Method for performing laser crystallization |
CN105321850A (en) * | 2014-08-05 | 2016-02-10 | 三星显示有限公司 | Laser crystalling apparatus |
CN106483672A (en) * | 2015-08-25 | 2017-03-08 | 三星显示有限公司 | Laser crystallization apparatus |
CN106552992A (en) * | 2015-09-30 | 2017-04-05 | 三星显示有限公司 | Laser aid |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102507094B1 (en) * | 2016-01-13 | 2023-03-08 | 삼성디스플레이 주식회사 | Laser crystalling apparatus |
-
2017
- 2017-10-17 KR KR1020170134799A patent/KR102384289B1/en active IP Right Grant
-
2018
- 2018-10-17 CN CN201811208687.2A patent/CN109676244B/en active Active
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1448753A (en) * | 2002-03-28 | 2003-10-15 | 三菱电机株式会社 | Optical system with laser beam uniform irradiation |
AU2002359205A1 (en) * | 2002-12-19 | 2004-07-14 | Telefonaktiebolaget Lm Ericsson (Publ) | Flexible optical cabling |
KR20050009532A (en) * | 2003-07-16 | 2005-01-25 | 삼성에스디아이 주식회사 | Flat panel display device comprising polysilicone thin film transistor and method thereof |
TW200528223A (en) * | 2004-02-26 | 2005-09-01 | Ultratech Inc | Laser scanning apparatus and methods for thermal processing |
CN1691278A (en) * | 2004-03-11 | 2005-11-02 | 株式会社液晶先端技术开发中心 | Laser crystallization apparatus and laser crystallization method |
US20060105585A1 (en) * | 2004-11-12 | 2006-05-18 | Applied Materials, Inc. | Autofocus for high power laser diode based annealing system |
CN101866058A (en) * | 2005-01-21 | 2010-10-20 | 株式会社尼康 | Polarization conversion device |
CN101208778A (en) * | 2005-09-14 | 2008-06-25 | 株式会社Ihi | Laser annealing method and device |
TW200818323A (en) * | 2006-06-27 | 2008-04-16 | Applied Materials Inc | Dynamic surface annealing using addressable laser array with pyrometry feedback |
TW200828410A (en) * | 2006-08-31 | 2008-07-01 | Semiconductor Energy Lab | Method for manufacturing crystalline semiconductor film and semiconductor device |
US20080280458A1 (en) * | 2007-05-11 | 2008-11-13 | Sony Corporation | Irradiating apparatus, semiconductor device manufacturing apparatus, semiconductor device manufacturing method, and display device manufacturing method |
CN103797564A (en) * | 2011-11-04 | 2014-05-14 | 应用材料公司 | Optical design for line generation using microlens array |
CN104283099A (en) * | 2013-07-10 | 2015-01-14 | 三星显示有限公司 | Method for performing laser crystallization |
CN105321850A (en) * | 2014-08-05 | 2016-02-10 | 三星显示有限公司 | Laser crystalling apparatus |
CN106483672A (en) * | 2015-08-25 | 2017-03-08 | 三星显示有限公司 | Laser crystallization apparatus |
CN106552992A (en) * | 2015-09-30 | 2017-04-05 | 三星显示有限公司 | Laser aid |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110265289A (en) * | 2019-06-25 | 2019-09-20 | 京东方科技集团股份有限公司 | The preparation method of quasi-molecule laser annealing device, polysilicon membrane |
WO2020259383A1 (en) * | 2019-06-25 | 2020-12-30 | 京东方科技集团股份有限公司 | Excimer laser annealing device, preparation method for polycrystalline silicon thin film, thin film transistor and preparation method therefor |
CN110265289B (en) * | 2019-06-25 | 2022-03-08 | 京东方科技集团股份有限公司 | Excimer laser annealing device and preparation method of polycrystalline silicon film |
Also Published As
Publication number | Publication date |
---|---|
KR102384289B1 (en) | 2022-04-08 |
CN109676244B (en) | 2022-06-07 |
KR20190043191A (en) | 2019-04-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109676244A (en) | Laser crystallization equipment | |
JP4309419B2 (en) | Light beam generation system and method using anisotropic acousto-optic modulator | |
CN106552992B (en) | Laser device | |
CN101990729A (en) | Combining multiple laser beams to form high repetition rate, high average power polarized laser beam | |
TW200305767A (en) | Method, apparatus and system for beam steering | |
US11532476B2 (en) | Laser crystallizing apparatus | |
KR20040063079A (en) | Beam irradiator and laser anneal device | |
CN1959471A (en) | System and method for generating beams of light using an anisotropic acousto-optic modulator | |
JP2017513071A5 (en) | ||
EP2005227A1 (en) | Phase stabilization device for stimulated brillouin scattering phase conjugate mirrors and light amplification apparatus using the same | |
JP2008541194A (en) | Optical diplexer with adjustable liquid crystal wave plate | |
JP2009276389A (en) | Terahertz wave-generating device and terahertz wave-generating method | |
CN102576152A (en) | Optical system for generating a light beam for treating a substrate | |
US20080037599A1 (en) | Wavelength conversion laser apparatus | |
JPWO2008117528A1 (en) | Laser resonator and laser device with non-uniform polarization distribution | |
CN113985603B (en) | Light beam scanning system | |
KR100906460B1 (en) | Pulse energy controllable multiple-pulse optical device | |
CN106898935A (en) | A kind of radio frequency intensity modulated green glow realizes system and tuning methods | |
CN116191188B (en) | Adjustable extra-cavity pulse laser and adjusting method thereof | |
KR102460551B1 (en) | Laser crystalling apparatus | |
KR102409834B1 (en) | Laser crystalling apparatus | |
JP3539931B2 (en) | Sum frequency light generation method and sum frequency light generation device | |
CN110554509B (en) | Device and method for forming spin-dependent optical lattice | |
JP6286089B2 (en) | Cascade optical harmonic generation | |
CN117691446A (en) | Laser pulse sequence generating device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |