CN109671782A - A kind of thin film transistor base plate and preparation method thereof - Google Patents
A kind of thin film transistor base plate and preparation method thereof Download PDFInfo
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- CN109671782A CN109671782A CN201811570668.4A CN201811570668A CN109671782A CN 109671782 A CN109671782 A CN 109671782A CN 201811570668 A CN201811570668 A CN 201811570668A CN 109671782 A CN109671782 A CN 109671782A
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- 239000010409 thin film Substances 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 96
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 96
- 239000005300 metallic glass Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims description 67
- 239000002184 metal Substances 0.000 claims description 67
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 50
- 239000010408 film Substances 0.000 claims description 35
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 25
- 229910052733 gallium Inorganic materials 0.000 claims description 25
- 229910052738 indium Inorganic materials 0.000 claims description 25
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 25
- 239000011787 zinc oxide Substances 0.000 claims description 25
- 238000009413 insulation Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 238000002425 crystallisation Methods 0.000 claims description 13
- 230000008025 crystallization Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910007541 Zn O Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Present applicant proposes a kind of thin film transistor base plates and preparation method thereof.The thin film transistor base plate includes the active layer of substrate and setting over the substrate.Wherein, the active layer includes the crystalline metal-oxide at both ends and the amorphous metal oxide that is arranged between the crystalline metal-oxide.The application forms active layer by using the mode that crystalline metal-oxide and amorphous metal oxide combine, and then promotes the electron mobility of thin film transistor base plate and the stability of device.
Description
Technical field
This application involves display field, in particular to a kind of thin film transistor base plate and preparation method thereof.
Background technique
With the continuous increase of size of display panels, the driving frequency of thin film transistor (TFT) is not also continuously improved.Traditional amorphous
Silicon thin film transistor has electron mobility low, the poor disadvantage of homogeneity.
Indium gallium zinc oxide (In-Ga-Zn-O, IGZO) thin film transistor (TFT) is because its mobility is high, translucency is good, film knot
Structure is stable, preparation temperature is low and it is at low cost the advantages that more and more paid attention to.But indium gallium zinc oxide (In-Ga-
Zn-O, IGZO) it is more sensitive to environment, there are devices for indium gallium zinc oxide (In-Ga-Zn-O, IGZO) film transistor device
The poor problem of stability.
Therefore, a kind of thin film transistor base plate and preparation method thereof is needed at present to solve the above problems.
Summary of the invention
The application provides a kind of thin film transistor base plate and preparation method thereof, with solve thin film transistor (TFT) stability compared with
The lower problem of difference, electron mobility.
To solve the above problems, technical solution provided by the present application is as follows:
According to the one aspect of the application, a kind of thin film transistor base plate, including substrate and setting are provided described
Active layer on substrate；
Wherein, the active layer include both ends crystalline metal-oxide and setting the crystalline metal-oxide it
Between amorphous metal oxide.
According to one embodiment of the application, the crystalline metal-oxide includes crystallization indium gallium zinc oxide, the amorphous gold
Belonging to oxide includes amorphous indium gallium zinc oxide.
According to one embodiment of the application, the edge at the both ends of the amorphous metal oxide and the crystalline metal-oxide
Fitting.
According to one embodiment of the application, the both ends part of the amorphous metal oxide covers the crystal metal oxidation
Object.
According to one embodiment of the application, the thin film transistor (TFT) further include:
Gate insulation layer on the active layer is set；
The first metal layer on the gate insulation layer 13 is set；
Insulating layer between being arranged on the first metal layer, it is described between insulating layer include the first via hole and the second via hole；
Be arranged in it is described between second metal layer on insulating layer, two metal layer includes source metal and drain metal,
The source metal and the drain metal pass through first via hole and second via hole and the crystal metal oxygen respectively
Compound electrical connection.
According to further aspect of the application, a kind of production method of thin film transistor base plate is additionally provided, comprising:
Step S10, a substrate is provided；
Step S20, form active layer over the substrate, the active layer include both ends crystalline metal-oxide and
Amorphous metal oxide between the crystalline metal-oxide is set.
According to one embodiment of the application, the step S20 is specifically included:
Step S201, depositing metal oxide films layer over the substrate, in 300 degrees Celsius to 1000 degrees Celsius of environment
Under, the crystallization of object film layer is oxidized metal using object gas, forms crystalline metal-oxide film layer；
Step S202, using yellow light technique by the crystalline metal-oxide film pattern, to form the crystallization at both ends
Metal oxide and intermediate channel；
Step S203, amorphous metal oxide is formed in the channel.
According to one embodiment of the application, the object gas is oxygen, and the flow of the oxygen is not less than 1 standard milliliters
It is per minute and per minute no more than 100 standard milliliters.
According to one embodiment of the application, the step S20 is specifically included:
Step S201, the ditch among crystalline metal-oxide and the crystalline metal-oxide is formed over the substrate
Road；
Step S202, amorphous metal oxide film layer is formed in the channel；
Step S203, gate insulation film layer and the first metallic diaphragm are formed in the amorphous metal oxide film layer；
Step S204, using yellow light technique to the amorphous metal oxide film layer, the gate insulation film layer and described
One metallic diaphragm is patterned, to form amorphous metal oxide, gate insulation layer 13 and the first metal layer.
According to one embodiment of the application, the production method of the thin film transistor (TFT) further include:
Step S30, patterned insulating layer of forming layer on the first metal layer is provided in insulating layer between described
First via hole and the second via hole；
Step S40, second metal layer is formed on insulating layer between described, the second metal layer includes source metal and leakage
Pole metal, the source metal and the drain metal pass through first via hole and second via hole and the crystallization respectively
Metal oxide electrical connection.
The utility model has the advantages that the application is formed by using the mode that crystalline metal-oxide and amorphous metal oxide combine
Active layer, and then promote the electron mobility of thin film transistor base plate and the stability of device.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the structural schematic diagram for the thin film transistor base plate that the application first embodiment provides；
Fig. 2 is the structural schematic diagram for the thin film transistor base plate that the application second embodiment provides；
Fig. 3 is the structural schematic diagram for the thin film transistor base plate that the application 3rd embodiment provides；
Fig. 4 is the structural schematic diagram for the thin film transistor base plate that the application fourth embodiment provides；
Fig. 5 is the flow diagram of the production method for the thin film transistor base plate that the 5th embodiment of the application provides；
Fig. 6 is the structure of thin film transistor (TFT) in the production method for the thin film transistor base plate that the 5th embodiment of the application provides
Schematic diagram；
Fig. 7 a-7b is the knot of step S20 in the production method for the thin film transistor base plate that the application sixth embodiment provides
Structure schematic diagram；
Fig. 8 a-8b is step S30 and S40 in the production method for the thin film transistor base plate that the 7th embodiment of the application provides
Structural schematic diagram.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the application
Example.The direction term that the application is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the application, rather than to
Limit the application.The similar unit of structure is with being given the same reference numerals in the figure.
The application provides a kind of thin film transistor base plate and preparation method thereof, to solve existing thin film transistor (TFT) stability
Problem poor, electron mobility is lower.
Referring to Fig. 1, Fig. 1 is the structural schematic diagram for the thin film transistor base plate that the application first embodiment provides.
This application provides a kind of thin film transistor base plates 100, including substrate 11 and are arranged on the substrate 11
Active layer 12；
Wherein, the active layer 12 includes the crystalline metal-oxide 121 at both ends and is arranged in the crystal metal oxygen
Amorphous metal oxide 122 between compound 121.
In one embodiment, the substrate 11 includes the one of them in flexible substrate and rigid substrate.
In one embodiment, the crystalline metal-oxide 121 includes crystallization indium gallium zinc oxide, the amorphous metal
Oxide 122 includes amorphous indium gallium zinc oxide.Wherein, indium gallium zinc oxide performance compared with amorphous indium gallium zinc oxide is crystallized
It is more stable, through crystallization indium gallium zinc oxide in conjunction with amorphous indium gallium zinc oxide, it can effectively promote active layer 12
Mobility and stability.
In one embodiment, the crystallization indium gallium zinc oxide is that C axis crystallizes indium gallium zinc oxide.
Referring to Fig. 2, Fig. 2 is the structural schematic diagram for the thin film transistor (TFT) that the application second embodiment provides.
In one embodiment, the side at the both ends of the amorphous metal oxide 122 and the crystalline metal-oxide 121
Edge fitting.
In one embodiment, the both ends part of the amorphous metal oxide 122 covers the crystalline metal-oxide
121。
In one embodiment, the spacing between the crystalline metal-oxide 121 not less than 1 micron and is not more than 100
Micron.
Referring to Fig. 3, Fig. 3 is the structural schematic diagram for the thin film transistor base plate that the application 3rd embodiment provides.
Referring to Fig. 4, Fig. 4 is the structural schematic diagram for the thin film transistor base plate that the application fourth embodiment provides.
In one embodiment, the thin film transistor base plate 100 further include gate insulation layer 13, the first metal layer 14,
Insulating layer 15 and second metal layer 16.
In one embodiment, the gate insulation layer 13 is arranged on the active layer 12.
In one embodiment, the material for preparing of the gate insulation layer 13 includes in silica, aluminium oxide and silicon nitride
One of them.
In one embodiment, the first metal layer 14 is arranged on the gate insulation layer 13.
In one embodiment, the material for preparing of the first metal layer 14 includes the one of them in molybdenum, copper and aluminium.
In one embodiment, insulating layer 15 is arranged on the first metal layer 14 between described, it is described between insulating layer 15
Including the first via hole 151 and the second via hole 152.
In one embodiment, the material for preparing of insulating layer 15 includes in silica, aluminium oxide and silicon nitride between described
One of them.
In one embodiment, the second metal layer 16 setting is between described on insulating layer 15, the two metal layers packet
Source metal 161 and drain metal 162 are included, the source metal 161 and the drain metal 162 pass through first mistake respectively
Hole 151 and second via hole 152 are electrically connected with the crystalline metal-oxide 121.
In one embodiment, the crystalline metal-oxide 121 includes being located at 122 side of amorphous metal oxide
The first crystalline metal-oxide 121 and positioned at 122 other side of amorphous metal oxide the second crystal metal aoxidize
Object 121；
Wherein, first crystalline metal-oxide 121 is electrically connected with the source metal 161, second mat gold
Belong to oxide 121 to be electrically connected with the drain metal 162.
In one embodiment, the material for preparing of the second metal layer 16 includes the one of them in molybdenum, aluminium and copper.
Wherein, the thin film transistor (TFT) that the thin film transistor base plate 100 and fourth embodiment that 3rd embodiment provides provide
Difference is the positional relationship between the both ends and the crystalline metal-oxide 121 of the amorphous metal oxide 122.
Referring to Fig. 5, Fig. 5 is the stream of the production method for the thin film transistor base plate 100 that the 5th embodiment of the application provides
Journey schematic diagram.
Referring to Fig. 6, Fig. 6 is thin in the production method for the thin film transistor base plate 100 that the 5th embodiment of the application provides
The structural schematic diagram of film transistor.
According to further aspect of the application, a kind of production method of thin film transistor base plate 100 is additionally provided, comprising:
Step S10, a substrate 11 is provided；
Step S20, active layer 12 is formed on the substrate 11, the active layer 12 includes that the crystal metal at both ends aoxidizes
Object 121 and the amorphous metal oxide 122 being arranged between the crystalline metal-oxide 121.
In one embodiment, the substrate 11 includes the one of them in flexible substrate and rigid substrate.
In one embodiment, the crystalline metal-oxide 121 includes crystallization indium gallium zinc oxide, the amorphous metal
Oxide 122 includes amorphous indium gallium zinc oxide.Wherein, indium gallium zinc oxide performance compared with amorphous indium gallium zinc oxide is crystallized
It is more stable, through crystallization indium gallium zinc oxide in conjunction with amorphous indium gallium zinc oxide, it can effectively promote active layer 12
Mobility and stability.
The structure that active layer 12 is combined by crystallizing indium gallium zinc oxide with amorphous indium gallium zinc oxide, can reduce source
The contact resistance of metal and semiconductor at drain contact areas, while improving the carrier concentration and stability of channel.
In one embodiment, the crystallization indium gallium zinc oxide is that C axis crystallizes indium gallium zinc oxide.
In one embodiment, the step S20 is specifically included:
Step S201, the depositing metal oxide films layer on the substrate 11, in 300 degrees Celsius to 1000 degrees Celsius of ring
Under border, the crystallization of object film layer is oxidized metal using object gas, forms 121 film layer of crystalline metal-oxide；
Step S202, using yellow light technique by 121 film pattern of crystalline metal-oxide, to form the knot at both ends
Brilliant metal oxide 121 and intermediate channel；
Step S203, amorphous metal oxide 122 is formed in the channel.
In one embodiment, the object gas is oxygen, and the flow of the oxygen is not less than 1 every point of standard milliliters
Clock and no more than 100 standard milliliters it is per minute.
In one embodiment, the length of the channel not less than 1 micron and is not more than 100 microns.
Fig. 7 a-7b is please referred to, Fig. 7 a-7b is the production method for the thin film transistor base plate that the application sixth embodiment provides
The structural schematic diagram of middle step S20.
In one embodiment, the step S20 is specifically included:
Step S201, crystalline metal-oxide 121 and the crystalline metal-oxide 121 are formed on the substrate 11
Intermediate channel；
Step S202, amorphous metal oxide film layer 122a is formed in the channel；
Step S203, gate insulation film layer 13a and the first metal film are formed on the amorphous metal oxide film layer 122a
Layer 14a；
Step S204, using yellow light technique to the amorphous metal oxide film layer 122a, the gate insulation film layer 13a and
The first metallic diaphragm 14a is patterned, to form amorphous metal oxide 122, gate insulation layer 13 and the first metal layer
14。
In one embodiment, 122 film layer of amorphous metal oxide can be formed individually using yellow light technique non-
Brilliant metal oxide 122 can also use yellow light technique to be formed together with the gate insulation film layer and first metallic diaphragm
Amorphous metal oxide 122 can be specifically configured, here without limitation according to the actual situation.When the gate insulation film layer and
First metallic diaphragm uses yellow light technique to form amorphous metal oxide 122 together, and then can save one of light shield.
Fig. 8 a-8b is please referred to, Fig. 8 a-8b is the production method for the thin film transistor base plate that the 7th embodiment of the application provides
The structural schematic diagram of middle step S30 and S40.
In one embodiment, the production method of the thin film transistor base plate 100 further include:
Step S30, patterned insulating layer 15 of forming layer on the first metal layer 14, it is described between in insulating layer 15
It is provided with the first via hole 151 and the second via hole 152；
Step S40, second metal layer 16 is formed on insulating layer 15 between described, the second metal layer 16 includes source electrode gold
Belong to 161 and drain metal 162, the source metal 161 and the drain metal 162 pass through 151 He of the first via hole respectively
Second via hole 152 is electrically connected with the crystalline metal-oxide 121.
In one embodiment, the crystalline metal-oxide 121 includes being located at 122 side of amorphous metal oxide
The first crystalline metal-oxide 121 and positioned at 122 other side of amorphous metal oxide the second crystal metal aoxidize
Object 121；
Wherein, first crystalline metal-oxide 121 is electrically connected with the source metal 161, second mat gold
Belong to oxide 121 to be electrically connected with the drain metal 162.
The utility model has the advantages that the application is formed by using the mode that crystalline metal-oxide and amorphous metal oxide combine
Active layer, and then promote the electron mobility of thin film transistor base plate and the stability of device.
Although above preferred embodiment is not to limit in conclusion the application is disclosed above with preferred embodiment
The application processed, those skilled in the art are not departing from spirit and scope, can make various changes and profit
Decorations, therefore the protection scope of the application subjects to the scope of the claims.
Claims (10)
1. a kind of thin film transistor base plate, which is characterized in that including the active layer of substrate and setting over the substrate；
Wherein, the active layer includes the crystalline metal-oxide at both ends and is arranged between the crystalline metal-oxide
Amorphous metal oxide.
2. thin film transistor base plate according to claim 1, which is characterized in that the crystalline metal-oxide includes crystallization
Indium gallium zinc oxide, the amorphous metal oxide include amorphous indium gallium zinc oxide.
3. thin film transistor base plate according to claim 1, which is characterized in that the both ends of the amorphous metal oxide with
The edge of the crystalline metal-oxide is bonded.
4. thin film transistor base plate according to claim 1, which is characterized in that the both ends of the amorphous metal oxide
Divide covering the crystalline metal-oxide.
5. thin film transistor base plate according to claim 1, which is characterized in that the thin film transistor base plate further include:
Gate insulation layer on the active layer is set；
The first metal layer on the gate insulation layer is set；
Insulating layer between being arranged on the first metal layer, it is described between insulating layer include the first via hole and the second via hole；
Be arranged in it is described between second metal layer on insulating layer, two metal layer includes source metal and drain metal, described
Source metal and the drain metal pass through first via hole and second via hole and the crystalline metal-oxide respectively
Electrical connection.
6. a kind of production method of thin film transistor base plate characterized by comprising
Step S 10, a substrate is provided；
Step S20, active layer is formed over the substrate, and the active layer includes crystalline metal-oxide and the setting at both ends
Amorphous metal oxide between the crystalline metal-oxide.
7. the production method of thin film transistor base plate according to claim 6, which is characterized in that the step S20 is specific
Include:
Step S201, depositing metal oxide films layer over the substrate, in the environment of 300 degrees Celsius to 1000 degrees Celsius,
The crystallization of object film layer is oxidized metal using object gas, forms crystalline metal-oxide film layer；
Step S202, using yellow light technique by the crystalline metal-oxide film pattern, to form the crystal metal at both ends
Oxide and intermediate channel；
Step S203, amorphous metal oxide is formed in the channel.
8. the production method of thin film transistor base plate according to claim 7, which is characterized in that the object gas is oxygen
Gas, the flow of the oxygen are per minute and per minute no more than 100 standard milliliters not less than 1 standard milliliters.
9. the production method of thin film transistor base plate according to claim 6, which is characterized in that the step S20 is specific
Include:
Step S201, the channel among crystalline metal-oxide and the crystalline metal-oxide is formed over the substrate；
Step S202, amorphous metal oxide film layer is formed in the channel；
Step S203, gate insulation film layer and the first metallic diaphragm are formed in the amorphous metal oxide film layer；
Step S204, using yellow light technique to the amorphous metal oxide film layer, the gate insulation film layer and first gold medal
Belong to film layer to be patterned, to form amorphous metal oxide, gate insulation layer 13 and the first metal layer.
10. the production method of thin film transistor base plate according to claim 9, which is characterized in that the thin film transistor (TFT)
The production method of substrate further include:
Step S30, patterned insulating layer of forming layer on the first metal layer is provided with first in insulating layer between described
Via hole and the second via hole；
Step S40, second metal layer is formed on insulating layer between described, the second metal layer includes source metal and drain electrode gold
Belong to, the source metal and the drain metal pass through first via hole and second via hole and the crystal metal respectively
Oxide electrical connection.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811570668.4A CN109671782A (en) | 2018-12-21 | 2018-12-21 | A kind of thin film transistor base plate and preparation method thereof |
| PCT/CN2019/083213 WO2020124900A1 (en) | 2018-12-21 | 2019-04-18 | Thin film transistor and manufacturing method therefor, and array substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811570668.4A CN109671782A (en) | 2018-12-21 | 2018-12-21 | A kind of thin film transistor base plate and preparation method thereof |
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| CN109671782A true CN109671782A (en) | 2019-04-23 |
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| WO (1) | WO2020124900A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021022605A1 (en) * | 2019-08-05 | 2021-02-11 | 深圳市华星光电半导体显示技术有限公司 | Method for preparing oxide thin film transistor, and array substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080258140A1 (en) * | 2007-04-20 | 2008-10-23 | Samsung Electronics Co., Ltd. | Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor |
| JP2014140005A (en) * | 2012-12-20 | 2014-07-31 | Nippon Hoso Kyokai <Nhk> | Thin film transistor and manufacturing method of the same |
| CN104064603A (en) * | 2009-02-05 | 2014-09-24 | 株式会社半导体能源研究所 | Transistor And Method For Manufacturing The Transistor |
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| TWI629791B (en) * | 2015-04-13 | 2018-07-11 | 友達光電股份有限公司 | Active device structure and fabricating method thereof |
| CN107968095A (en) * | 2017-11-21 | 2018-04-27 | 深圳市华星光电半导体显示技术有限公司 | Carry on the back channel etch type TFT substrate and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080258140A1 (en) * | 2007-04-20 | 2008-10-23 | Samsung Electronics Co., Ltd. | Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor |
| CN104064603A (en) * | 2009-02-05 | 2014-09-24 | 株式会社半导体能源研究所 | Transistor And Method For Manufacturing The Transistor |
| JP2014140005A (en) * | 2012-12-20 | 2014-07-31 | Nippon Hoso Kyokai <Nhk> | Thin film transistor and manufacturing method of the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021022605A1 (en) * | 2019-08-05 | 2021-02-11 | 深圳市华星光电半导体显示技术有限公司 | Method for preparing oxide thin film transistor, and array substrate |
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