CN109671600B - AlGaAs photocathode with adjustable wavelength - Google Patents
AlGaAs photocathode with adjustable wavelength Download PDFInfo
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- CN109671600B CN109671600B CN201910098554.2A CN201910098554A CN109671600B CN 109671600 B CN109671600 B CN 109671600B CN 201910098554 A CN201910098554 A CN 201910098554A CN 109671600 B CN109671600 B CN 109671600B
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Abstract
The invention relates to an AlGaAs photocathode with adjustable wavelength, which comprises a glass window and Si which are concentrically arranged from bottom to top 3 N 4 The light-shielding device comprises an anti-reflection layer, a buffer layer and a plurality of emission layers, wherein the diameters of the emission layers are sequentially reduced from bottom to top, the upper surface of each emission layer is covered with an activation layer, and the surface of each activation layer is covered with a detachable light-shielding cap; wherein the buffer layer adopts Al x Ga x1‑ Uniformly doping the buffer layer with As; several emission layers are made of Al with different Al compositions x’ Ga x’1‑ As emitting layer, al component in several emitting layersx’The values decrease in sequence from bottom to top,x’the value is 1~0, a plurality of emission layers are uniformly doped, and the doping concentration in each emission layer is sequentially reduced from bottom to top; the activating layer adopts a Cs/O activating layer; the photocathode is matched with the shading caps with proper number and positions, and the effect of adjustable wavelength can be achieved according to different use scenes.
Description
Technical Field
The invention relates to the technical field of photocathodes, in particular to an AlGaAs photocathode with adjustable wavelength.
Background
At present, research on negative electron affinity (negative electron affinity, NEA for short) photocathodes at home and abroad is focused on standard GaAs photocathodes, narrow-band response GaAlAs photocathodes, ultraviolet solar blind response GaN photocathodes, near-infrared InGaAs photocathodes and the like. The project group is based on research results of NEA photocathodes In recent decades, and has applied for research of AlGaAs photocathodes, namely, a blue-extended variable-bandgap AlGaAs/GaAs photocathode and a preparation method thereof (application number: CN 201110202343.2), a 532 nm-sensitive transmission type GaAlAs photocathode and a preparation method thereof (application number: 201110013841.2) and a 532 nm-cut-off reflection type GaAlAs photocathode and a preparation method thereof (application number: 201210094925.8), an index-doped reflection type GaAs photocathode and a preparation method thereof (application number: CN 201310211048.2), a logarithmic-doped variable-In component-based reflection type GaAs photocathode (application number: CN 201410010132.2), a blue-extended index-doped transmission type GaAs photocathode and a preparation method thereof (application number: CN 201410153219.5) and the like, wherein the above patents relate to GaAs or AlGaAs photocathodes of different structures and have single emission layers only for a certain spectral response range under specific application.
There is a need for a transmissive AlGaAs photocathode with adjustable wavelength, which can realize the effect of adjustable wavelength according to different usage scenarios, according to different requirements of different applications on spectral response.
Disclosure of Invention
The invention aims to provide an AlGaAs photocathode with adjustable wavelength.
In order to solve the technical problems, the invention adopts the following technical scheme:
an AlGaAs photocathode with adjustable wavelength is characterized in that: comprises a glass window and Si which are concentrically arranged from bottom to top 3 N 4 The light-shielding device comprises an anti-reflection layer, a buffer layer and a plurality of emission layers, wherein the diameters of the emission layers are sequentially reduced from bottom to top, an exposed area of the upper surface of each emission layer is covered with an activation layer, each emission layer is provided with an activation layer corresponding to the emission layer, the shape and the size of the end face of each activation layer are the same as those of the exposed area of the upper surface of the corresponding emission layer, and the surface of each activation layer is covered with a detachable light-shielding cap;
the buffer layer adopts Al x Ga x1- Uniformly doping the buffer layer with As;
the plurality of emission layers adopt Al with different Al compositions x’ Ga x’1- As emitting layer, al component in several emitting layersx’The values decrease in sequence from bottom to top,x’the value is 1~0, a plurality of emission layers are uniformly doped, and the doping concentration in each emission layer is sequentially reduced from bottom to top;
the activating layer adopts a Cs/O activating layer;
the shading cap is made of opaque materials.
The thickness of the glass window is 2-8 mm, and the diameter of the glass window is 22-42 mm.
The Si is 3 N 4 The thickness of the anti-reflection layer is 100-200 nm, and Si 3 N 4 The diameter of the anti-reflection layer is 13-23 mm.
Al used for the buffer layer x Ga x1- In an As uniformly doped buffer layerxThe value is between 0.4 and 0.8, and the uniform doping concentration is between 1.0X10 17 ~1.0×10 19 cm -3 The thickness of the buffer layer is 100-1000 nm, and the diameter of the buffer layer is 13-23 mm.
The diameter of the bottom emission layer is the same as that of the buffer layer, the diameters of the emission layers are sequentially decreased by 2-8 mm from bottom to top, the thicknesses of the emission layers are the same, the thickness of the emission layers is 100-3000 nm, and the doping concentration of the emission layers is 1.0X10 19 ~1.0×10 18 cm -3 Between them.
The end face of the shading cap above the topmost activating layer is round, and the end face of the shading cap above the non-topmost activating layer is annular.
The glass window and Si 3 N 4 The anti-reflection layer, the buffer layer, the emission layer and the activation layer are adjacent to each other and are mutually adsorbed and fixed by adopting an ultrahigh vacuum activation process.
The thickness of the activation layer has no influence on the realization of the technical effect of the device, and the thickness of the activation layer is generally 0.5-1.5 nm.
The doping in the buffer layer and the emission layer adopts a uniform doping mode, if a metal organic compound vapor phase epitaxy method is adopted, the doping atoms are zinc, and if a molecular beam epitaxy method is adopted, the doping atoms are beryllium.
The wavelength-adjustable AlGaAs photocathode has the beneficial effects that: by adopting the structural design of multiple light emitting layers with different diameters, different components and different doping, the spectral response range can cover the spectral response range of each light emitting layer, 400-900 nm wide spectral response can be obtained when the photocathode is used alone, and spectral effects with different responses, such as visible light response and blue-green light response, can be obtained when the photocathode is matched with different shading caps. The transmission AlGaAs photocathode with the structure can be used for photocathodes in low-light-level image intensifiers under night sky; the device can be matched with a 532nm laser, applied to an ocean photoelectron detection device and used for performing various activities in the ocean detection field; the method can also be used in the fields of vacuum electron sources, solar cells and the like with different spectral response requirements.
Drawings
Fig. 1 is a schematic structural diagram of an AlGaAs photocathode with adjustable wavelength according to the present invention.
FIG. 2 is a cross-sectional view of a wavelength tunable AlGaAs photocathode of the present invention.
FIG. 3 is a graph showing the spectral response of a wavelength tunable AlGaAs photocathode of the present invention.
The drawings in the specification are marked: 1. a glass window; 2. si (Si) 3 N 4 An anti-reflection layer; 3. a buffer layer; 4. an emissive layer; 5. an activation layer; 6. a light shielding cap;
4.1, a first emission layer; 4.2, a second emission layer; 4.3, a third emission layer;
5.1, a first activation layer; 5.2, a second activation layer; 5.3, a third activation layer.
Detailed Description
The invention is further described below with reference to the drawings and specific preferred embodiments.
First embodiment:
as shown in fig. 2, a wavelength-adjustable AlGaAs photocathode is characterized in that: comprises glass windows 1 and Si which are concentrically arranged in sequence from bottom to top 3 N 4 The anti-reflection layer 2, the buffer layer 3 and the plurality of emission layers 4, wherein the diameters of the emission layers 4 are sequentially reduced from bottom to top, the upper surface of each emission layer 4 is provided with an activation layer 5 corresponding to the emission layer 4, the shape and the size of the end face of the activation layer 5 are the same as the shape and the size of the exposed area of the upper surface of the corresponding emission layer 4, and the surface of each activation layer 5 is covered with a detachable shading cap 6;
in this embodiment, the glass window 1 is made of Corning 7056 # Glass window, totalThe thickness is 4mm and the diameter is 32mm.
In the present embodiment, si 3 N 4 The total thickness of the anti-reflection layer 2 is 100nm, and the diameter is 18mm.
In the present embodiment, the buffer layer 3 is made of Al x Ga x1- Uniformly doping the buffer layer with As; wherein the Al component value in the buffer layer 3x0.5, total thickness of 500nm, buffer layer 3 with uniform doping, doping atoms of Zn, doping concentration of 1.0X10 19 cm -3 。
In this embodiment, three emission layers 4 are provided, including a first emission layer 4.1, a second emission layer 4.2, and a third emission layer 4.3 from bottom to top, and the three emission layers adopt Al with different Al compositions x’ Ga x’1- An As emission layer;
wherein the first emitting layer adopts Al x1 Ga x11- As emission layer, al component value of first emission layerx1 is 1.0, the thickness is 500nm, the diameter is 18mm, the doping atoms are Zn, the doping is carried out in a uniform doping mode, and the doping concentration is 1.0x10 19 cm -3 ；
The second emission layer adopts Al x2 Ga x21- As emission layer, al composition value of second emission layerx2 is 0.5, the thickness is 500nm, the diameter is 13mm, the doping atoms are Zn, the doping is carried out in a uniform doping mode, and the doping concentration is 5.0x10 18 cm -3 ；
The third emission layer adopts Al x3 Ga x31- As emission layer, al composition value of third emission layerx3 is 0, the thickness is 500nm, the diameter is 8mm, the doping atoms are Zn, the doping is carried out in a uniform doping mode, and the doping concentration is 1.0x10 18 cm -3 。
In this embodiment, the upper surfaces of the first emission layer, the second emission layer and the third emission layer are all provided with an activation layer 5;
the upper surface of the first emitting layer is provided with an annular first activating layer 5.1, the first activating layer adopts a Cs/O activating layer, the thickness is 0.7nm, the inner diameter of the first activating layer is 13mm, and the outer diameter of the first activating layer is 18mm;
the upper surface of the second emission layer is provided with an annular second activation layer 5.2, the second activation layer adopts a Cs/O activation layer, the thickness is 0.7nm, the inner diameter of the second activation layer is 8mm, and the outer diameter of the second activation layer is 13mm;
the upper surface of the third emitting layer is provided with a round third activating layer 5.2, the third activating layer adopts a Cs/O activating layer, the thickness is 0.7nm, and the diameter of the third activating layer is 8mm.
In the embodiment, the upper surface of each activating layer is provided with a detachable shading cap 6;
the upper surface of the first activation layer is provided with an annular shading cap, the inner diameter of the shading cap is 13mm, and the outer diameter of the first activation layer is 18mm; the upper surface of the second activation layer is also provided with an annular shading cap, the inner diameter of the shading cap is 8mm, and the outer diameter of the second activation layer is 13mm; the upper surface of the third activation layer is provided with a circular shading cap with the diameter of 8mm.
In this embodiment, glass window, si 3 N 4 The anti-reflection layer, the buffer layer, the emission layer and the activation layer are adjacent to each other and are mutually adsorbed and fixed by adopting an ultrahigh vacuum activation process.
The light shielding caps at different positions and numbers are arranged to realize the spectral response curves in different response ranges, as shown in fig. 3, the curve corresponding to the curve 1 is the spectral response of photoelectrons passing through the first emission layer only, at this time, the light shielding caps are arranged on the upper surfaces of the second activation layer and the third activation layer, so that the spectral response of blue-green light wave bands can be realized, and the light shielding caps can be used for ocean detection devices; the curve corresponding to the curve 2 is the spectral response of photoelectrons passing through the first emission layer and the second emission layer, and at the moment, the upper surfaces of the first activation layer and the third activation layer are provided with shading caps, so that the spectral response of visible light wave bands is realized; the curve corresponding to the curve 3 is the spectral response of photoelectrons passing through the first emission layer, the second emission layer and the third emission layer, and at the moment, the light shielding caps are arranged on the upper surfaces of the first activation layer and the second activation layer, so that the spectral response of 400-900 nm wide spectral range is realized, and the light shielding cap can be used for a low-light-level image intensifier.
Specific embodiment II:
an AlGaAs photocathode with adjustable wavelength is characterized in that: comprises a main body consisting ofGlass window and Si concentrically arranged from bottom to top 3 N 4 The light-shielding device comprises an anti-reflection layer, a buffer layer and a plurality of emission layers, wherein the diameters of the emission layers are sequentially reduced from bottom to top, an exposed area of the upper surface of each emission layer is covered with an activation layer, each emission layer is provided with an activation layer corresponding to the emission layer, the shape and the size of the end face of each activation layer are the same as those of the exposed area of the upper surface of the corresponding emission layer, and the surface of each activation layer is covered with a detachable light-shielding cap;
in this embodiment, the glass window is made of Corning 7056 # The glass window has a total thickness of 6mm and a diameter of 40mm.
In the present embodiment, si 3 N 4 The total thickness of the anti-reflection layer is 150nm, and the diameter is 30mm.
In this embodiment, the buffer layer is made of Al x Ga x1- Uniformly doping the buffer layer with As; wherein the Al component value in the buffer layerx0.5, total thickness of 500nm, buffer layer adopting uniform doping mode, doping atoms of Zn, doping concentration of 1.0X10 19 cm -3 。
In this embodiment, three emission layers are provided, including a first emission layer, a second emission layer, and a third emission layer from bottom to top, the three emission layers being made of Al having different Al compositions x’ Ga x’1- An As emission layer;
wherein the first emitting layer adopts Al x1 Ga x11- As emission layer, al component value of first emission layerx1 is 1.0, the thickness is 500nm, the diameter is 18mm, the doping atoms are Zn, the doping is carried out in a uniform doping mode, and the doping concentration is 1.0x10 19 cm -3 ；
The second emission layer adopts Al x2 Ga x21- As emission layer, al composition value of second emission layerx2 is 0.5, the thickness is 500nm, the diameter is 13mm, the doping atoms are Zn, the doping is carried out in a uniform doping mode, and the doping concentration is 5.0x10 18 cm -3 ；
The third emission layer adopts Al x3 Ga x31- As emissionAl component value of layer, third emission layerx3 is 0, the thickness is 500nm, the diameter is 8mm, the doping atoms are Zn, the doping is carried out in a uniform doping mode, and the doping concentration is 1.0x10 18 cm -3 。
In this embodiment, the upper surfaces of the first emission layer, the second emission layer and the third emission layer are all provided with an activation layer;
the upper surface of the first emitting layer is provided with an annular first activating layer, the first activating layer adopts a Cs/O activating layer, the thickness is 0.5nm, the inner diameter of the first activating layer is 13mm, and the outer diameter of the first activating layer is 18mm;
the upper surface of the second emission layer is provided with an annular second activation layer, the second activation layer adopts a Cs/O activation layer, the thickness is 0.5nm, the inner diameter of the second activation layer is 8mm, and the outer diameter of the second activation layer is 13mm;
the upper surface of the third emitting layer is provided with a round third activating layer, the third activating layer adopts a Cs/O activating layer, the thickness is 0.5nm, and the diameter of the third activating layer is 8mm.
In the embodiment, the upper surface of each activating layer is provided with a detachable shading cap;
the upper surface of the first activation layer is provided with an annular shading cap, the inner diameter of the shading cap is 13mm, and the outer diameter of the first activation layer is 18mm; the upper surface of the second activation layer is also provided with an annular shading cap, the inner diameter of the shading cap is 8mm, and the outer diameter of the second activation layer is 13mm; the upper surface of the third activation layer is provided with a circular shading cap with the diameter of 8mm.
In this embodiment, glass window, si 3 N 4 The anti-reflection layer, the buffer layer, the emission layer and the activation layer are adjacent to each other and are mutually adsorbed and fixed by adopting an ultrahigh vacuum activation process.
Third embodiment:
an AlGaAs photocathode with adjustable wavelength is characterized in that: comprises a glass window and Si which are concentrically arranged from bottom to top 3 N 4 The anti-reflection layer, the buffer layer and a plurality of emission layers, the emission layers are sequentially reduced from bottom to top, the upper surface exposed area of each emission layer is covered with an activation layer, and each emission layer is provided with a plurality of active layersThe shape and the size of the end face of the corresponding activation layer are the same as those of the upper surface exposure area of the corresponding emission layer, and the surface of each activation layer is covered with a detachable shading cap;
in this embodiment, the glass window is made of Corning 7056 # The glass window has a total thickness of 2mm and a diameter of 30mm.
In the present embodiment, si 3 N 4 The total thickness of the anti-reflection layer is 200nm, and the diameter is 20mm.
In this embodiment, the buffer layer is made of Al x Ga x1- Uniformly doping the buffer layer with As; wherein the Al component value in the buffer layerx0.5, total thickness of 500nm, buffer layer adopting uniform doping mode, doping atoms of Zn, doping concentration of 1.0X10 19 cm -3 。
In this embodiment, three emission layers are provided, including a first emission layer, a second emission layer, and a third emission layer from bottom to top, the three emission layers being made of Al having different Al compositions x’ Ga x’1- An As emission layer;
wherein the first emitting layer adopts Al x1 Ga x11- As emission layer, al component value of first emission layerx1 is 1.0, the thickness is 500nm, the diameter is 18mm, the doping atoms are Zn, the doping is carried out in a uniform doping mode, and the doping concentration is 1.0x10 19 cm -3 ；
The second emission layer adopts Al x2 Ga x21- As emission layer, al composition value of second emission layerx2 is 0.5, the thickness is 500nm, the diameter is 13mm, the doping atoms are Zn, the doping is carried out in a uniform doping mode, and the doping concentration is 5.0x10 18 cm -3 ；
The third emission layer adopts Al x3 Ga x31- As emission layer, al composition value of third emission layerx3 is 0, the thickness is 500nm, the diameter is 8mm, the doping atoms are Zn, the doping is carried out in a uniform doping mode, and the doping concentration is 1.0x10 18 cm -3 。
In this embodiment, the upper surfaces of the first emission layer, the second emission layer and the third emission layer are all provided with an activation layer;
the upper surface of the first emitting layer is provided with an annular first activating layer, the first activating layer adopts a Cs/O activating layer, the thickness is 1.5nm, the inner diameter of the first activating layer is 13mm, and the outer diameter of the first activating layer is 18mm;
the upper surface of the second emission layer is provided with an annular second activation layer, the second activation layer adopts a Cs/O activation layer, the thickness is 1.5nm, the inner diameter of the second activation layer is 8mm, and the outer diameter of the second activation layer is 13mm;
the upper surface of the third emitting layer is provided with a round third activating layer, the third activating layer adopts a Cs/O activating layer, the thickness is 1.5nm, and the diameter of the third activating layer is 8mm.
In the embodiment, the upper surface of each activating layer is provided with a detachable shading cap;
the upper surface of the first activation layer is provided with an annular shading cap, the inner diameter of the shading cap is 13mm, and the outer diameter of the first activation layer is 18mm; the upper surface of the second activation layer is also provided with an annular shading cap, the inner diameter of the shading cap is 8mm, and the outer diameter of the second activation layer is 13mm; the upper surface of the third activation layer is provided with a circular shading cap with the diameter of 8mm.
In this embodiment, glass window, si 3 N 4 The anti-reflection layer, the buffer layer, the emission layer and the activation layer are adjacent to each other and are mutually adsorbed and fixed by adopting an ultrahigh vacuum activation process.
The second embodiment and the third embodiment are different from the first embodiment in that the thicknesses and diameters of the glass window, the anti-reflection layer and the activation layer are different. However, the spectral response curves of the devices in the second and third embodiments are identical to those of the first embodiment. Therefore, the thicknesses and diameters of the glass window, the anti-reflection layer and the activation layer are not directly influenced by the spectral response effect, and the size range of the thicknesses and diameters of the glass window, the anti-reflection layer and the activation layer is supported.
Fourth embodiment:
an AlGaAs photocathode with adjustable wavelength is characterized in that: comprises a glass window and Si which are concentrically arranged from bottom to top 3 N 4 Anti-reflection layerThe light-shielding device comprises a plurality of emission layers, a buffer layer and a plurality of emission layers, wherein the diameters of the emission layers are sequentially reduced from bottom to top, the exposed area of the upper surface of each emission layer is covered with an activation layer, each emission layer is provided with an activation layer corresponding to the emission layer, the shape and the size of the end face of each activation layer are the same as those of the exposed area of the upper surface of the corresponding emission layer, and the surface of each activation layer is covered with a detachable light-shielding cap;
in this embodiment, the glass window is made of Corning 7056 # The glass window has a total thickness of 4mm and a diameter of 32mm.
In the present embodiment, si 3 N 4 The total thickness of the anti-reflection layer is 100nm, and the diameter is 18mm.
In this embodiment, the buffer layer is made of Al x Ga x1- Uniformly doping the buffer layer with As; wherein the Al component value in the buffer layerxThe total thickness is 600nm and the buffer layer adopts a uniform doping mode, the doping atoms are Zn, and the doping concentration is 2.0X10 19 cm -3 。
In this embodiment, three emission layers are provided, including a first emission layer, a second emission layer, and a third emission layer from bottom to top, the three emission layers being made of Al having different Al compositions x’ Ga x’1- An As emission layer;
wherein the first emitting layer adopts Al x1 Ga x11- As emission layer, al component value of first emission layerx1 is 1.0, the thickness is 500nm, the diameter is 18mm, the doping atoms are Zn, the doping is carried out in a uniform doping mode, and the doping concentration is 1.0x10 19 cm -3 ；
The second emission layer adopts Al x2 Ga x21- As emission layer, al composition value of second emission layerx2 is 0.5, the thickness is 500nm, the diameter is 13mm, the doping atoms are Zn, the doping is carried out in a uniform doping mode, and the doping concentration is 5.0x10 18 cm -3 ；
The third emission layer adopts Al x3 Ga x31- As emission layer, al composition value of third emission layerx3 is 0, the thickness is 500nm, and the diameter is 8mmThe doping atoms are Zn, and the doping is carried out in a uniform doping mode, wherein the doping concentration is 1.0 multiplied by 10 18 cm -3 。
In this embodiment, the upper surfaces of the first emission layer, the second emission layer and the third emission layer are all provided with an activation layer;
the upper surface of the first emitting layer is provided with an annular first activating layer, the first activating layer adopts a Cs/O activating layer, the thickness is 0.7nm, the inner diameter of the first activating layer is 13mm, and the outer diameter of the first activating layer is 18mm;
the upper surface of the second emission layer is provided with an annular second activation layer, the second activation layer adopts a Cs/O activation layer, the thickness is 0.7nm, the inner diameter of the second activation layer is 8mm, and the outer diameter of the second activation layer is 13mm;
the upper surface of the third emitting layer is provided with a round third activating layer, the third activating layer adopts a Cs/O activating layer, the thickness is 0.7nm, and the diameter of the third activating layer is 8mm.
In the embodiment, the upper surface of each activating layer is provided with a detachable shading cap;
the upper surface of the first activation layer is provided with an annular shading cap, the inner diameter of the shading cap is 13mm, and the outer diameter of the first activation layer is 18mm; the upper surface of the second activation layer is also provided with an annular shading cap, the inner diameter of the shading cap is 8mm, and the outer diameter of the second activation layer is 13mm; the upper surface of the third activation layer is provided with a circular shading cap with the diameter of 8mm.
In this embodiment, glass window, si 3 N 4 The anti-reflection layer, the buffer layer, the emission layer and the activation layer are adjacent to each other and are mutually adsorbed and fixed by adopting an ultrahigh vacuum activation process.
The fourth embodiment differs from the first embodiment in that the buffer layer is made of Al x Ga x1- Al component value of As uniformly doped buffer layerxThe differences in size and doping concentration illustrate the adjustability of the buffer layer structure data, with the spectral response increasing as its Al composition decreases and the spectral response peak-to-valley position changing as its thickness changes.
Fifth embodiment:
AlGaAs photoelectric device with adjustable wavelengthA cathode, characterized by: comprises a glass window and Si which are concentrically arranged from bottom to top 3 N 4 The light-shielding device comprises an anti-reflection layer, a buffer layer and a plurality of emission layers, wherein the diameters of the emission layers are sequentially reduced from bottom to top, an exposed area of the upper surface of each emission layer is covered with an activation layer, each emission layer is provided with an activation layer corresponding to the emission layer, the shape and the size of the end face of each activation layer are the same as those of the exposed area of the upper surface of the corresponding emission layer, and the surface of each activation layer is covered with a detachable light-shielding cap;
in this embodiment, the glass window is made of Corning 7056 # The glass window has a total thickness of 4mm and a diameter of 32mm.
In the present embodiment, si 3 N 4 The total thickness of the anti-reflection layer is 100nm, and the diameter is 18mm.
In this embodiment, the buffer layer is made of Al x Ga x1- Uniformly doping the buffer layer with As; wherein the Al component value in the buffer layerx0.5, total thickness of 500nm, buffer layer adopting uniform doping mode, doping atoms of Zn, doping concentration of 1.0X10 19 cm -3 。
In this embodiment, three emission layers are provided, including a first emission layer, a second emission layer, and a third emission layer from bottom to top, the three emission layers being made of Al having different Al compositions x’ Ga x’1- An As emission layer;
wherein the first emitting layer adopts Al x1 Ga x11- As emission layer, al component value of first emission layerx1 is 0.7，The thickness is 600nm, the diameter is 18mm, the doping atoms are Zn, the doping is carried out in a uniform doping mode, and the doping concentration is 5.0x10 18 cm -3 ；
The second emission layer adopts Al x2 Ga x21- As emission layer, al composition value of second emission layerx2 is 0.5, the thickness is 600nm, the diameter is 13mm, the doping atoms are Zn, the doping is carried out in a uniform doping mode, and the doping concentration is 5.0x10 18 cm -3 ；
The third emission layer adopts Al x3 Ga x31- As emission layer, al composition value of third emission layerx3 is 0.2, the thickness is 600nm, the diameter is 8mm, the doping atoms are Zn, the doping is carried out in a uniform doping mode, and the doping concentration is 1.0x10 18 cm -3 。
In this embodiment, the upper surfaces of the first emission layer, the second emission layer and the third emission layer are all provided with an activation layer;
the upper surface of the first emitting layer is provided with an annular first activating layer, the first activating layer adopts a Cs/O activating layer, the thickness is 0.7nm, the inner diameter of the first activating layer is 13mm, and the outer diameter of the first activating layer is 18mm;
the upper surface of the second emission layer is provided with an annular second activation layer, the second activation layer adopts a Cs/O activation layer, the thickness is 0.7nm, the inner diameter of the second activation layer is 8mm, and the outer diameter of the second activation layer is 13mm;
the upper surface of the third emitting layer is provided with a round third activating layer, the third activating layer adopts a Cs/O activating layer, the thickness is 0.7nm, and the diameter of the third activating layer is 8mm.
In the embodiment, the upper surface of each activating layer is provided with a detachable shading cap;
the upper surface of the first activation layer is provided with an annular shading cap, the inner diameter of the shading cap is 13mm, and the outer diameter of the first activation layer is 18mm; the upper surface of the second activation layer is also provided with an annular shading cap, the inner diameter of the shading cap is 8mm, and the outer diameter of the second activation layer is 13mm; the upper surface of the third activation layer is provided with a circular shading cap with the diameter of 8mm.
In this embodiment, glass window, si 3 N 4 The anti-reflection layer, the buffer layer, the emission layer and the activation layer are adjacent to each other and are mutually adsorbed and fixed by adopting an ultrahigh vacuum activation process.
The fifth embodiment differs from the first embodiment in that the size and Al composition of each emission layer are different, and when the thickness and Al composition of each emission layer are changed, the spectral response cut-off wavelength, the peak wavelength, the response height, and the like are affected.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the invention without departing from the principles thereof are intended to be within the scope of the invention as set forth in the following claims.
Claims (7)
1. An AlGaAs photocathode with adjustable wavelength is characterized in that: comprises a glass window (1) and Si which are concentrically arranged from bottom to top 3 N 4 The anti-reflection coating comprises an anti-reflection layer (2), a buffer layer (3) and a plurality of emission layers (4), wherein the diameters of the emission layers (4) are sequentially reduced from bottom to top, an upper surface exposure area of each emission layer (4) is covered with an activation layer (5), the shape and the size of the end face of each activation layer (5) are the same as those of the upper surface exposure area of the corresponding emission layer (4), and the surface of each activation layer (5) is covered with a detachable shading cap (6);
the buffer layer (3) adopts Al x Ga x1- Uniformly doping the buffer layer with As;
the plurality of emission layers (4) adopt Al with different Al compositions x’ Ga x’1- An As emission layer, al components in a plurality of emission layers (4)x’The values decrease in sequence from bottom to top,x’the values are 1~0, the emission layers (4) are uniformly doped, and the doping concentration in each emission layer (4) is sequentially reduced from bottom to top;
the activating layer (5) adopts a Cs/O activating layer;
the shading cap (6) is made of opaque materials.
2. A wavelength tunable AlGaAs photocathode according to claim 1, wherein: the thickness of the glass window (1) is 2-8 mm, and the diameter of the glass window (1) is 22-42 mm.
3. A wavelength tunable AlGaAs photocathode according to claim 1, wherein: the Si is 3 N 4 The thickness of the anti-reflection layer (2) is 100-200 nm, and Si 3 N 4 The diameter of the anti-reflection layer (2) is 13-23 mm.
4. A wavelength tunable AlGaAs photocathode according to claim 1, wherein: al used in the buffer layer (3) x Ga x1- In an As uniformly doped buffer layerxThe value is between 0.4 and 0.8, and the uniform doping concentration is between 1.0X10 17 ~1.0×10 19 cm -3 The thickness of the buffer layer (3) is 100-1000 nm, and the diameter of the buffer layer (3) is 13-23 mm.
5. A wavelength tunable AlGaAs photocathode according to claim 1, wherein: the diameter of the bottom-most emission layer (4) is the same as that of the buffer layer (3), the diameters of a plurality of emission layers (4) are sequentially decreased from bottom to top by 2-8 mm, the thicknesses of a plurality of emission layers (4) are the same, the thickness of the emission layers (4) is 100-3000 nm, and the doping concentration of a plurality of emission layers (4) is 1.0X10) 19 ~1.0×10 18 cm -3 Between them.
6. A wavelength tunable AlGaAs photocathode according to claim 1, wherein: the end face of the shading cap (6) above the topmost activating layer (5) is round, and the end face of the shading cap (6) above the non-topmost activating layer (5) is annular.
7. A wavelength tunable AlGaAs photocathode according to claim 1, wherein: the glass window (1) and Si 3 N 4 The anti-reflection layer (2), the buffer layer (3), the emission layer (4) and the activation layer (5) are adjacent to each other and are mutually adsorbed and fixed by adopting an ultrahigh vacuum activation process.
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