CN109671600A - A kind of AlGaAs photocathode of Wavelength tunable - Google Patents
A kind of AlGaAs photocathode of Wavelength tunable Download PDFInfo
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- CN109671600A CN109671600A CN201910098554.2A CN201910098554A CN109671600A CN 109671600 A CN109671600 A CN 109671600A CN 201910098554 A CN201910098554 A CN 201910098554A CN 109671600 A CN109671600 A CN 109671600A
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Abstract
The present invention is a kind of AlGaAs photocathode of Wavelength tunable, including glass window, the Si being successively arranged concentrically from the bottom to top3N4If antireflection layer, buffer layer and dry plate emission layer, if diameter is sequentially reduced the dry plate emission layer from the bottom to top, the upper surface of every layer of emission layer is covered with active coating, and every layer of activation layer surface is all covered with dismountable sun-shading cap；Wherein buffer layer uses Al x Ga1‑x As Uniform Doped buffer layer；If dry plate emission layer uses the Al of different Al components x’ Ga1‑x’ As emission layer, if Al component in dry plate emission layerx’Value is sequentially reduced from the bottom to top,x’Value is between 1 ~ 0, if dry plate emission layer is all made of Uniform Doped mode, the doping concentration in each emission layer is sequentially reduced from the bottom to top；Active coating uses Cs/O active coating；The sun-shading cap of this kind of photocathode cooperation suitable quantity and position, can be realized the effect of Wavelength tunable according to the difference of usage scenario.
Description
Technical field
The present invention is to be related to photocathode technical field, the AlGaAs photocathode of specifically a kind of Wavelength tunable.
Background technique
At present both at home and abroad to negative electron affinity (NEA) (negative electron affinity, abbreviation NEA) photocathode
Research be all directed to standard GaAs photocathode, narrowband response GaAlAs photocathode, ultraviolet day blind response GaN photoelectricity yin
Pole, near-infrared InGaAs photocathode etc..Project team is opened based on the research achievement in recent ten years to NEA photocathode
A kind of patent of invention " blue extension variable speed gap AlGaAs/GaAs photoelectricity yin has been applied in the research for having opened up AlGaAs photocathode
Pole and preparation method thereof " (application number: CN201110202343.2), " the transmission-type GaAlAs photocathode sensitive to 532nm and
Preparation method " (application number: 201110013841.2) and " 532nm cut-off reflective GaAlAs photocathode and its preparation
Method " (application number: 201210094925.8), " a kind of the reflective GaAs photocathode of exponential doping and preparation method thereof " (Shen
Please number: CN201310211048.2), " based on logarithm doping become In component reflective structure GaAs photocathode " (application number:
CN201410010132.2), " a kind of indigo plant Elongation index doping Transmission-mode GaAs photocathode and preparation method thereof " (application number:
CN201410153219.5) etc., above each patent is related to GaAs the or AlGaAs photocathode of different structure, but these photoelectricity yin
Pole only has single emission layer both for the design of spectral response range a certain under specific application.
A kind of requirement difference for different application to spectral response is needed to provide a kind of transmission-type of Wavelength tunable
AlGaAs photocathode can be realized the effect of Wavelength tunable according to the difference of usage scenario.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of AlGaAs photocathodes of Wavelength tunable.
In order to solve the above technical problems, the technical solution adopted by the present invention are as follows:
A kind of AlGaAs photocathode of Wavelength tunable, it is characterized in that: include successively be arranged concentrically from the bottom to top glass window,
Si3N4If antireflection layer, buffer layer and dry plate emission layer, if diameter is sequentially reduced the dry plate emission layer from the bottom to top, every layer of hair
The upper surface exposed area for penetrating layer is all covered with active coating, and every layer of emission layer is provided with corresponding active coating,
The geomery of the upper surface exposed area of the corresponding emission layer of the shape and size of the end face of the active coating is identical,
Every layer of activation layer surface is all covered with dismountable sun-shading cap；
The buffer layer uses Al x Ga1-x As Uniform Doped buffer layer；
If the dry plate emission layer uses the Al of different Al components x’ Ga1-x’ As emission layer, if Al component in dry plate emission layerx’
Value is sequentially reduced from the bottom to top,x’Value is between 1 ~ 0, if dry plate emission layer is all made of Uniform Doped mode, each emission layer
In doping concentration be sequentially reduced from the bottom to top；
The active coating uses Cs/O active coating；
The sun-shading cap is made of light-proof material.
2 ~ the 8mm of glass window thickness, the diameter of the glass window are 22 ~ 42mm.
The Si3N4Anti-reflection 100 ~ 200nm of thickness, Si3N413 ~ 23mm of antireflection layer diameter.
Al used by the buffer layer x Ga1-x In As Uniform Doped buffer layerxValue is between 0.4 ~ 0.8,
Even doping concentration is between 1.0 × 1017~1.0×1019cm-3Between, buffer 100 ~ 1000nm of thickness, 13 ~ 23mm of buffer layer diameter.
Bottom emission layer diameter is identical as buffer layer diameter, if dry plate emission layer diameter successively successively decrease 2 from the bottom to top ~
8mm, if dry plate emission layer thickness is identical, sheet emitting 100 ~ 3000nm of thickness, if the doping concentration of dry plate emission layer between 1.0 ×
1019~1.0×1018cm-3Between.
Sun-shading cap end face above the active coating of top is circle, the sun-shading cap above the active coating of non-top
End face is circular ring shape.
The glass window, Si3N4Antireflection layer, buffer layer, emission layer and active coating it is adjacent between using ultrahigh vacuum swash
Technique living realizes that mutually absorption is fixed.
The thickness of active coating does not influence the realization of present apparatus technical effect, general active coating thickness 0.5 ~
Between 1.5nm.
Doping in buffer layer and emission layer is all made of Uniform Doped mode, according to Metal Organic Vapor extension
Method, then foreign atom is zinc, and according to molecular beam epitaxy, then foreign atom is beryllium.
The AlGaAs photocathode of this kind of Wavelength tunable can the beneficial effects are as follows: by using different-diameter,
Different component, the different multi-emissive layer structure designs adulterated, enable spectral response range to cover the spectral response of each emission layer
Range can obtain the response of 400 ~ 900nm wide spectrum when the photocathode is used alone, cooperating can obtain not when different sun-shading caps
With the spectrum effects of response, such as visible light-responded, bluish-green photoresponse.With the transmission-type AlGaAs photoelectricity yin in structure of the invention
Pole can be used for the photocathode under night sky in gleam image intensifier；532nm laser can be cooperated, using Yu Haiyang's photoelectricity
In sub- sensitive detection parts, for carrying out the Activities in hydrospace detection field；It can also be used for vacuum electric component, solar battery etc. no
The field required with spectral response.
Detailed description of the invention
Fig. 1 is a kind of structure principle chart of the AlGaAs photocathode of Wavelength tunable of the present invention.
Fig. 2 is a kind of sectional view of the AlGaAs photocathode of Wavelength tunable of the present invention.
Fig. 3 is a kind of spectral response curve figure of the AlGaAs photocathode of Wavelength tunable of the present invention.
Figure of description mark: 1, glass window；2,Si3N4Antireflection layer；3, buffer layer；4, emission layer；5, active coating；6,
Sun-shading cap；
4.1, the first emission layer；4.2, the second emission layer；4.3, third emission layer；
5.1, the first active coating；5.2, the second active coating；5.3, third active coating.
Specific embodiment
Below in conjunction with Figure of description and specific preferred embodiment, the invention will be further described.
Specific embodiment one:
As shown in Fig. 2, a kind of AlGaAs photocathode of Wavelength tunable, it is characterized in that: including successively being arranged concentrically from the bottom to top
Glass window 1, Si3N4If antireflection layer 2, buffer layer 3 and dry plate emission layer 4, if the dry plate emission layer 4 is straight from the bottom to top
Diameter is sequentially reduced, and 4 upper surface of every layer of emission layer is provided with corresponding active coating 5, the end of the active coating 5
The geomery of the upper surface exposed area of the corresponding emission layer 4 of the shape and size in face is identical, every layer of 5 surface of active coating
It is all covered with dismountable sun-shading cap 6；
In the present embodiment, glass window 1 uses Corning 7056#Glass window, overall thickness 4mm, diameter 32mm.
In the present embodiment, Si3N42 overall thickness of antireflection layer is 100nm, diameter 18mm.
In the present embodiment, buffer layer 3 uses Al x Ga1-x As Uniform Doped buffer layer；The wherein Al group score value in buffer layer 3xBe 0.5, overall thickness 500nm, buffer layer 3 use Uniform Doped mode, foreign atom Zn, doping concentration be 1.0 ×
1019cm-3。
In the present embodiment, three layers of emission layer 4 are provided with, including the first emission layer 4.1, the second emission layer from the bottom to top
4.2 and third emission layer 4.3, three layers of emission layer use the Al of different Al components x’ Ga1-x’ As emission layer；
Wherein, the first emission layer uses Al x1 Ga1-x1 As emission layer, the Al group score value of the first emission layerx1 is 1.0, with a thickness of
500nm, diameter 18mm, foreign atom Zn are adulterated by the way of Uniform Doped, and doping concentration is 1.0 × 1019cm-3；
Second emission layer uses Al x2 Ga1-x2 As emission layer, the Al group score value of the second emission layerx2 be 0.5, with a thickness of 500nm, directly
Diameter is 13mm, and foreign atom Zn is adulterated by the way of Uniform Doped, and doping concentration is 5.0 × 1018cm-3；
Third emission layer uses Al x3 Ga1-x3 As emission layer, the Al group score value of third emission layerx3 be 0, with a thickness of 500nm, diameter
It is adulterated by the way of Uniform Doped for 8mm, foreign atom Zn, doping concentration is 1.0 × 1018cm-3。
In the present embodiment, the first emission layer, the second emission layer and third emission layer upper surface are provided with active coating 5；
Wherein, the first emission layer upper surface is provided with the first active coating 5.1 of annular, and the first active coating uses Cs/O active coating,
With a thickness of 0.7nm, the first active coating internal diameter is 13mm, and the first active coating outer diameter is 18mm；
Second emission layer upper surface is provided with the second active coating 5.2 of annular, and the second active coating uses Cs/O active coating, with a thickness of
0.7nm, the second active coating internal diameter are 8mm, and the second active coating outer diameter is 13mm；
Third emission layer upper surface is provided with circular third active coating 5.2, and third active coating uses Cs/O active coating, with a thickness of
0.7nm, third active coating diameter are 8mm.
In the present embodiment, every layer of active coating upper surface is provided with dismountable sun-shading cap 6；
Wherein the first active coating upper surface is provided with annular sun-shading cap, which is 13mm, and the first active coating outer diameter is
18mm；Second active coating upper surface is again provided with annular sun-shading cap, which is 8mm, and the second active coating outer diameter is
13mm；Third active coating upper surface is provided with round sun-shading cap, which is 8mm.
In the present embodiment, glass window, Si3N4Antireflection layer, buffer layer, emission layer and active coating it is adjacent between use superelevation
Vacuum activation technology realizes that mutually absorption is fixed.
The spectral response curve that different response ranges are realized by the sun-shading cap of installation different location and quantity, such as Fig. 3 institute
Show, the corresponding curve of curve 1 is spectral response when photoelectron only passes through the first emission layer, at this point, the second active coating and third
Active coating upper surface is equipped with sun-shading cap, can be realized the spectral response of bluish-green optical band, can be used for hydrospace detection device；Curve
2 corresponding curves are spectral response when photoelectron passes through the first emission layer and the second emission layer, at this point, the first active coating and the
Three active coating upper surfaces are equipped with sun-shading cap, realize the spectral response of visible light wave range；The corresponding curve of curve 3 is photoelectron
Spectral response when by the first emission layer, the second emission layer and third emission layer, at this point, the first active coating and the second active coating
Upper surface is equipped with sun-shading cap, realizes the spectral response of 400 ~ 900nm wide spectral range, can be used for gleam image intensifier.
Specific embodiment two:
A kind of AlGaAs photocathode of Wavelength tunable, it is characterized in that: include successively be arranged concentrically from the bottom to top glass window,
Si3N4If antireflection layer, buffer layer and dry plate emission layer, if diameter is sequentially reduced the dry plate emission layer from the bottom to top, every layer of hair
The upper surface exposed area for penetrating layer is all covered with active coating, and every layer of emission layer is provided with corresponding active coating,
The geomery of the upper surface exposed area of the corresponding emission layer of the shape and size of the end face of the active coating is identical,
Every layer of activation layer surface is all covered with dismountable sun-shading cap；
In the present embodiment, glass window uses Corning 7056#Glass window, overall thickness 6mm, diameter 40mm.
In the present embodiment, Si3N4Antireflection layer overall thickness is 150nm, diameter 30mm.
In the present embodiment, buffer layer uses Al x Ga1-x As Uniform Doped buffer layer；The wherein Al group score value in buffer layerx
It is 0.5, overall thickness 500nm, buffer layer uses Uniform Doped mode, foreign atom Zn, and doping concentration is 1.0 × 1019cm-3。
In the present embodiment, three layers of emission layer are provided with, including the first emission layer, the second emission layer and third from the bottom to top
Emission layer, three layers of emission layer use the Al of different Al components x’ Ga1-x’ As emission layer；
Wherein, the first emission layer uses Al x1 Ga1-x1 As emission layer, the Al group score value of the first emission layerx1 is 1.0, with a thickness of
500nm, diameter 18mm, foreign atom Zn are adulterated by the way of Uniform Doped, and doping concentration is 1.0 × 1019cm-3；
Second emission layer uses Al x2 Ga1-x2 As emission layer, the Al group score value of the second emission layerx2 be 0.5, with a thickness of 500nm, directly
Diameter is 13mm, and foreign atom Zn is adulterated by the way of Uniform Doped, and doping concentration is 5.0 × 1018cm-3；
Third emission layer uses Al x3 Ga1-x3 As emission layer, the Al group score value of third emission layerx3 be 0, with a thickness of 500nm, diameter
It is adulterated by the way of Uniform Doped for 8mm, foreign atom Zn, doping concentration is 1.0 × 1018cm-3。
In the present embodiment, the first emission layer, the second emission layer and third emission layer upper surface are provided with active coating；
Wherein, the first emission layer upper surface is provided with the first active coating of annular, and the first active coating uses Cs/O active coating, thickness
For 0.5nm, the first active coating internal diameter is 13mm, and the first active coating outer diameter is 18mm；
Second emission layer upper surface is provided with the second active coating of annular, and the second active coating uses Cs/O active coating, with a thickness of
0.5nm, the second active coating internal diameter are 8mm, and the second active coating outer diameter is 13mm；
Third emission layer upper surface is provided with circular third active coating, and third active coating uses Cs/O active coating, with a thickness of
0.5nm, third active coating diameter are 8mm.
In the present embodiment, every layer of active coating upper surface is provided with dismountable sun-shading cap；
Wherein the first active coating upper surface is provided with annular sun-shading cap, which is 13mm, and the first active coating outer diameter is
18mm；Second active coating upper surface is again provided with annular sun-shading cap, which is 8mm, and the second active coating outer diameter is
13mm；Third active coating upper surface is provided with round sun-shading cap, which is 8mm.
In the present embodiment, glass window, Si3N4Antireflection layer, buffer layer, emission layer and active coating it is adjacent between use superelevation
Vacuum activation technology realizes that mutually absorption is fixed.
Specific embodiment three:
A kind of AlGaAs photocathode of Wavelength tunable, it is characterized in that: include successively be arranged concentrically from the bottom to top glass window,
Si3N4If antireflection layer, buffer layer and dry plate emission layer, if diameter is sequentially reduced the dry plate emission layer from the bottom to top, every layer of hair
The upper surface exposed area for penetrating layer is all covered with active coating, and every layer of emission layer is provided with corresponding active coating,
The geomery of the upper surface exposed area of the corresponding emission layer of the shape and size of the end face of the active coating is identical,
Every layer of activation layer surface is all covered with dismountable sun-shading cap；
In the present embodiment, glass window uses Corning 7056#Glass window, overall thickness 2mm, diameter 30mm.
In the present embodiment, Si3N4Antireflection layer overall thickness is 200nm, diameter 20mm.
In the present embodiment, buffer layer uses Al x Ga1-x As Uniform Doped buffer layer；The wherein Al group score value in buffer layerx
It is 0.5, overall thickness 500nm, buffer layer uses Uniform Doped mode, foreign atom Zn, and doping concentration is 1.0 × 1019cm-3。
In the present embodiment, three layers of emission layer are provided with, including the first emission layer, the second emission layer and third from the bottom to top
Emission layer, three layers of emission layer use the Al of different Al components x’ Ga1-x’ As emission layer；
Wherein, the first emission layer uses Al x1 Ga1-x1 As emission layer, the Al group score value of the first emission layerx1 is 1.0, with a thickness of
500nm, diameter 18mm, foreign atom Zn are adulterated by the way of Uniform Doped, and doping concentration is 1.0 × 1019cm-3；
Second emission layer uses Al x2 Ga1-x2 As emission layer, the Al group score value of the second emission layerx2 be 0.5, with a thickness of 500nm, directly
Diameter is 13mm, and foreign atom Zn is adulterated by the way of Uniform Doped, and doping concentration is 5.0 × 1018cm-3；
Third emission layer uses Al x3 Ga1-x3 As emission layer, the Al group score value of third emission layerx3 be 0, with a thickness of 500nm, diameter
It is adulterated by the way of Uniform Doped for 8mm, foreign atom Zn, doping concentration is 1.0 × 1018cm-3。
In the present embodiment, the first emission layer, the second emission layer and third emission layer upper surface are provided with active coating；
Wherein, the first emission layer upper surface is provided with the first active coating of annular, and the first active coating uses Cs/O active coating, thickness
For 1.5nm, the first active coating internal diameter is 13mm, and the first active coating outer diameter is 18mm；
Second emission layer upper surface is provided with the second active coating of annular, and the second active coating uses Cs/O active coating, with a thickness of
1.5nm, the second active coating internal diameter are 8mm, and the second active coating outer diameter is 13mm；
Third emission layer upper surface is provided with circular third active coating, and third active coating uses Cs/O active coating, with a thickness of
1.5nm, third active coating diameter are 8mm.
In the present embodiment, every layer of active coating upper surface is provided with dismountable sun-shading cap；
Wherein the first active coating upper surface is provided with annular sun-shading cap, which is 13mm, and the first active coating outer diameter is
18mm；Second active coating upper surface is again provided with annular sun-shading cap, which is 8mm, and the second active coating outer diameter is
13mm；Third active coating upper surface is provided with round sun-shading cap, which is 8mm.
In the present embodiment, glass window, Si3N4Antireflection layer, buffer layer, emission layer and active coating it is adjacent between use superelevation
Vacuum activation technology realizes that mutually absorption is fixed.
The difference of specific embodiment two, specific embodiment three and specific embodiment one is glass window, antireflection layer, activation
Thickness, the diameter of layer are different.But the spectral response curve of equipment and specific reality in specific embodiment two and specific embodiment three
It is identical to apply example one.Therefore, illustrate that glass window, antireflection layer, the thickness of active coating, diameter do not directly affect spectral response effect
Fruit, and support the size range of glass window, antireflection layer, the thickness of active coating, diameter.
Specific embodiment four:
A kind of AlGaAs photocathode of Wavelength tunable, it is characterized in that: include successively be arranged concentrically from the bottom to top glass window,
Si3N4If antireflection layer, buffer layer and dry plate emission layer, if diameter is sequentially reduced the dry plate emission layer from the bottom to top, every layer of hair
The upper surface exposed area for penetrating layer is all covered with active coating, and every layer of emission layer is provided with corresponding active coating,
The geomery of the upper surface exposed area of the corresponding emission layer of the shape and size of the end face of the active coating is identical,
Every layer of activation layer surface is all covered with dismountable sun-shading cap；
In the present embodiment, glass window uses Corning 7056#Glass window, overall thickness 4mm, diameter 32mm.
In the present embodiment, Si3N4Antireflection layer overall thickness is 100nm, diameter 18mm.
In the present embodiment, buffer layer uses Al x Ga1-x As Uniform Doped buffer layer；The wherein Al group score value in buffer layerx
It is 0.4, overall thickness 600nm, buffer layer uses Uniform Doped mode, foreign atom Zn, and doping concentration is 2.0 × 1019cm-3。
In the present embodiment, three layers of emission layer are provided with, including the first emission layer, the second emission layer and third from the bottom to top
Emission layer, three layers of emission layer use the Al of different Al components x’ Ga1-x’ As emission layer；
Wherein, the first emission layer uses Al x1 Ga1-x1 As emission layer, the Al group score value of the first emission layerx1 is 1.0, with a thickness of
500nm, diameter 18mm, foreign atom Zn are adulterated by the way of Uniform Doped, and doping concentration is 1.0 × 1019cm-3；
Second emission layer uses Al x2 Ga1-x2 As emission layer, the Al group score value of the second emission layerx2 be 0.5, with a thickness of 500nm, directly
Diameter is 13mm, and foreign atom Zn is adulterated by the way of Uniform Doped, and doping concentration is 5.0 × 1018cm-3；
Third emission layer uses Al x3 Ga1-x3 As emission layer, the Al group score value of third emission layerx3 be 0, with a thickness of 500nm, diameter
It is adulterated by the way of Uniform Doped for 8mm, foreign atom Zn, doping concentration is 1.0 × 1018cm-3。
In the present embodiment, the first emission layer, the second emission layer and third emission layer upper surface are provided with active coating；
Wherein, the first emission layer upper surface is provided with the first active coating of annular, and the first active coating uses Cs/O active coating, thickness
For 0.7nm, the first active coating internal diameter is 13mm, and the first active coating outer diameter is 18mm；
Second emission layer upper surface is provided with the second active coating of annular, and the second active coating uses Cs/O active coating, with a thickness of
0.7nm, the second active coating internal diameter are 8mm, and the second active coating outer diameter is 13mm；
Third emission layer upper surface is provided with circular third active coating, and third active coating uses Cs/O active coating, with a thickness of
0.7nm, third active coating diameter are 8mm.
In the present embodiment, every layer of active coating upper surface is provided with dismountable sun-shading cap；
Wherein the first active coating upper surface is provided with annular sun-shading cap, which is 13mm, and the first active coating outer diameter is
18mm；Second active coating upper surface is again provided with annular sun-shading cap, which is 8mm, and the second active coating outer diameter is
13mm；Third active coating upper surface is provided with round sun-shading cap, which is 8mm.
In the present embodiment, glass window, Si3N4Antireflection layer, buffer layer, emission layer and active coating it is adjacent between use superelevation
Vacuum activation technology realizes that mutually absorption is fixed.
The difference of specific embodiment four and specific embodiment one is buffer layer using Al x Ga1-x As Uniform Doped buffer layer
Al group score valuex, size and doping concentration it is different, illustrate the adjustability of buffer layer structure data, when its Al component reduces,
Spectral response increased, and when its thickness change, spectral response peak-to-valley value position changes.
Specific embodiment five:
A kind of AlGaAs photocathode of Wavelength tunable, it is characterized in that: include successively be arranged concentrically from the bottom to top glass window,
Si3N4If antireflection layer, buffer layer and dry plate emission layer, if diameter is sequentially reduced the dry plate emission layer from the bottom to top, every layer of hair
The upper surface exposed area for penetrating layer is all covered with active coating, and every layer of emission layer is provided with corresponding active coating,
The geomery of the upper surface exposed area of the corresponding emission layer of the shape and size of the end face of the active coating is identical,
Every layer of activation layer surface is all covered with dismountable sun-shading cap；
In the present embodiment, glass window uses Corning 7056#Glass window, overall thickness 4mm, diameter 32mm.
In the present embodiment, Si3N4Antireflection layer overall thickness is 100nm, diameter 18mm.
In the present embodiment, buffer layer uses Al x Ga1-x As Uniform Doped buffer layer；The wherein Al group score value in buffer layerx
It is 0.5, overall thickness 500nm, buffer layer uses Uniform Doped mode, foreign atom Zn, and doping concentration is 1.0 × 1019cm-3。
In the present embodiment, three layers of emission layer are provided with, including the first emission layer, the second emission layer and third from the bottom to top
Emission layer, three layers of emission layer use the Al of different Al components x’ Ga1-x’ As emission layer；
Wherein, the first emission layer uses Al x1 Ga1-x1 As emission layer, the Al group score value of the first emission layerx1 is 0.7,With a thickness of
600nm, diameter 18mm, foreign atom Zn are adulterated by the way of Uniform Doped, and doping concentration is 5.0 × 1018cm-3；
Second emission layer uses Al x2 Ga1-x2 As emission layer, the Al group score value of the second emission layerx2 be 0.5, with a thickness of 600nm, directly
Diameter is 13mm, and foreign atom Zn is adulterated by the way of Uniform Doped, and doping concentration is 5.0 × 1018cm-3；
Third emission layer uses Al x3 Ga1-x3 As emission layer, the Al group score value of third emission layerx3 be 0.2, with a thickness of 600nm, directly
Diameter is 8mm, and foreign atom Zn is adulterated by the way of Uniform Doped, and doping concentration is 1.0 × 1018cm-3。
In the present embodiment, the first emission layer, the second emission layer and third emission layer upper surface are provided with active coating；
Wherein, the first emission layer upper surface is provided with the first active coating of annular, and the first active coating uses Cs/O active coating, thickness
For 0.7nm, the first active coating internal diameter is 13mm, and the first active coating outer diameter is 18mm；
Second emission layer upper surface is provided with the second active coating of annular, and the second active coating uses Cs/O active coating, with a thickness of
0.7nm, the second active coating internal diameter are 8mm, and the second active coating outer diameter is 13mm；
Third emission layer upper surface is provided with circular third active coating, and third active coating uses Cs/O active coating, with a thickness of
0.7nm, third active coating diameter are 8mm.
In the present embodiment, every layer of active coating upper surface is provided with dismountable sun-shading cap；
Wherein the first active coating upper surface is provided with annular sun-shading cap, which is 13mm, and the first active coating outer diameter is
18mm；Second active coating upper surface is again provided with annular sun-shading cap, which is 8mm, and the second active coating outer diameter is
13mm；Third active coating upper surface is provided with round sun-shading cap, which is 8mm.
In the present embodiment, glass window, Si3N4Antireflection layer, buffer layer, emission layer and active coating it is adjacent between use superelevation
Vacuum activation technology realizes that mutually absorption is fixed.
Specific embodiment five is that each emission layer size and Al component are different from the difference of specific embodiment one, Dang Gefa
It penetrates thickness degree and when Al component changes, influences spectral response cutoff wavelength, peak wavelength, the high low performance of response.
The above is only the preferred embodiment of the present invention, protection scope of the present invention is not limited merely to above-described embodiment,
All technical solutions belonged under thinking of the present invention all belong to the scope of protection of the present invention.It should be pointed out that for the art
For those of ordinary skill, several improvements and modifications without departing from the principles of the present invention should be regarded as protection of the invention
Range.
Claims (7)
1. the AlGaAs photocathode of a kind of Wavelength tunable, it is characterized in that: including the windowpane being successively arranged concentrically from the bottom to top
Mouth (1), Si3N4Antireflection layer (2), buffer layer (3) and if dry plate emission layer (4), if the dry plate emission layer (4) is from the bottom to top
Diameter is sequentially reduced, and the upper surface exposed area of every layer of emission layer (4) is all covered with active coating (5), the active coating (5)
The geomery of the upper surface exposed area of the corresponding emission layer of the shape and size of end face (4) is identical, every layer of active coating
(5) surface is all covered with dismountable sun-shading cap (6)；
The buffer layer (3) uses Al x Ga1-x As Uniform Doped buffer layer；
If the dry plate emission layer (4) is using the Al of different Al components x’ Ga1-x’ As emission layer, if Al in dry plate emission layer (4)
Componentx’Value is sequentially reduced from the bottom to top,x’Value is between 1 ~ 0, if dry plate emission layer (4) is all made of Uniform Doped mode, respectively
Doping concentration in piece emission layer (4) is sequentially reduced from the bottom to top；
The active coating (5) uses Cs/O active coating；
The sun-shading cap (6) is made of light-proof material.
2. a kind of AlGaAs photocathode of Wavelength tunable according to claim 1, it is characterised in that: the windowpane
Mouth 2 ~ 8mm of (1) thickness, the diameter of the glass window (1) are 22 ~ 42mm.
3. a kind of AlGaAs photocathode of Wavelength tunable according to claim 1, it is characterised in that: the Si3N4Increase
Permeable layers (2) thickness 100 ~ 200nm, Si3N4Antireflection layer (2) 13 ~ 23mm of diameter.
4. a kind of AlGaAs photocathode of Wavelength tunable according to claim 1, it is characterised in that: the buffer layer
(3) Al used by x Ga1-x In As Uniform Doped buffer layerxValue is between 0.4 ~ 0.8, and uniform doping concentration is between 1.0
×1017~1.0×1019cm-3Between, buffer layer (3) 100 ~ 1000nm of thickness, buffer layer (3) 13 ~ 23mm of diameter.
5. a kind of AlGaAs photocathode of Wavelength tunable according to claim 1, it is characterised in that: bottom emission layer
(4) diameter is identical as buffer layer (3) diameter, 2 ~ 8mm if dry plate emission layer (4) diameter successively successively decreases from the bottom to top, if dry plate is sent out
It is identical to penetrate layer (4) thickness, sheet emitting (4) 100 ~ 3000nm of thickness, if the doping concentration of dry plate emission layer (4) is between 1.0 × 1019~
1.0×1018cm-3Between.
6. a kind of AlGaAs photocathode of Wavelength tunable according to claim 1, it is characterised in that: positioned at top
Sun-shading cap (6) end face above active coating (5) is circle, and sun-shading cap (6) end face above the active coating (5) of non-top is circle
Annular.
7. a kind of AlGaAs photocathode of Wavelength tunable according to claim 1, it is characterised in that: the windowpane
Mouth (1), Si3N4Antireflection layer (2), buffer layer (3), emission layer (4) and active coating (5) it is adjacent between using ultrahigh vacuum activate work
Skill realizes that mutually absorption is fixed.
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