CN109659410A - A kind of novel PSS board structure and preparation method thereof - Google Patents
A kind of novel PSS board structure and preparation method thereof Download PDFInfo
- Publication number
- CN109659410A CN109659410A CN201811470642.2A CN201811470642A CN109659410A CN 109659410 A CN109659410 A CN 109659410A CN 201811470642 A CN201811470642 A CN 201811470642A CN 109659410 A CN109659410 A CN 109659410A
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- Prior art keywords
- pss
- exposure
- board structure
- novel
- substrate
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000003292 glue Substances 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000004528 spin coating Methods 0.000 claims abstract description 7
- 238000000605 extraction Methods 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a kind of novel PSS board structures and preparation method thereof, PSS substrate includes unit figure and exposure region, and unit figure is evenly distributed in exposure region, production method the following steps are included: using spin coating method, one layer of negative photoresist is coated on PSS substrate, and negative photoresist exposure development is obtained into the PSS substrate with circular hole with glue, then dry ecthing procedure is carried out again, carves the PSS substrate with multiple up big and down small hexagonal holes.The outer rim of the two can be spliced overlay region splicing, be exposed to different exposure areas by two groups of PSS substrates of the invention in splicing, and the exposure of entire exposure field is realized after final each exposure area splicing, the uniformity of exposure is realized, improves exposure quality；The negative photoresist coated using the method for the present invention, thickness are suitable for, and coat uniformly, while cooperating the cooperation of up big and down small circular hole, can significantly increase the extraction efficiency of light.
Description
Technical field
The present invention relates to PSS matrix technique fields more particularly to a kind of novel PSS board structure and preparation method thereof.
Background technique
Graphical sapphire substrate (Patterned Sapphire Substrate, PSS), that is, in Sapphire Substrate
Upper growth dry etching exposure mask, carves figure for exposure mask with the photoetching process of standard, is etched using ICP lithographic technique blue precious
Stone, and remove exposure mask, then grow GaN material on it, so that longitudinal extension of GaN material is become longitudinal extension.It on the one hand can
To effectively reduce the dislocation density of GaN epitaxial material, to reduce the non-radiative recombination of active area, reduces reverse leakage current, mention
The service life of high LED；With the development of the field LED technology, and the rapid growth of entire LED industry, to GaN base
The research of LED device PSS substrate also gradually increases.Nowadays each producer uses PSS technology one after another, to improve LED device
Light extraction efficiency.
Due to LED material, its refraction coefficient is big, and light extraction efficiency is bad, and penetrates PSS base version, in addition to reducing extension
Outside defect, it can also increase the extraction efficiency of light, but existing PSS substrate is weaker to the increase effect of the extraction efficiency of light, and
After the splicing of PSS substrate, final exposure quality will affect, we have devised a kind of novel PSS board structure and its system thus
Problem above is solved as method.
Summary of the invention
The purpose of the present invention is to solve disadvantages existing in the prior art, and a kind of novel PSS substrate knot proposed
Structure and preparation method thereof.
To achieve the goals above, present invention employs following technical solutions:
A kind of novel PSS board structure, the PSS substrate includes unit figure and exposure region, and unit figure is evenly distributed on exposure
In area.
Preferably, the surface of the exposure region is in roughness, and the two sides up and down of exposure region are equipped with outer rim splicing weight
Folded area.
Preferably, the unit figure forms equally distributed hole in exposure region, and hole is up big and down small concentric circles
Shape hole.
A kind of production method of novel PSS board structure, includes following steps: using the method for spin coating, applying on PSS substrate
One layer of negative photoresist is covered, by photoresist exposure development, the PSS substrate with circular hole with glue is obtained, then carries out again
Dry ecthing procedure carves the PSS substrate with multiple up big and down small hexagonal holes.
Preferably, the negative photoresist with a thickness of 2.0~2.3um, optimum thickness 2.3um.
Compared with prior art, the beneficial effects of the present invention are:
1, the outer rim of the two can be spliced overlay region splicing, i.e., unit figure is in exposure region edge in splicing by two groups of PSS substrates
Large semicircle mode spliced with each other, different exposure areas is exposed, is realized after final each exposure area splicing entire
The uniformity of exposure, the corresponding exposure energy of stitching position exposure energy corresponding with other positions are realized in the exposure of exposure field
It is consistent, achieve the purpose that eliminate residue glue, improve exposure quality；
2, negative photoresist is coated on PSS substrate, negative photoresist, can be corresponding when receiving the light or ray of certain wavelength
A kind of photochemical reaction or incentive action occurs, the chemical reaction of photoresist can be induced, utilize the method for the present invention coating
Negative photoresist, thickness are suitable for, and coat uniformly, while cooperating the cooperation of up big and down small circular hole, can significantly increase
The extraction efficiency of light.
Detailed description of the invention
Fig. 1 is the structural schematic diagram after a kind of novel PSS substrate photoetching proposed by the present invention；
Fig. 2 is SEM side view after a kind of photoetching of novel PSS board structure proposed by the present invention；
Fig. 3 is SEM top view after a kind of photoetching of novel PSS board structure proposed by the present invention.
Fig. 4 is SEM side view after a kind of etching of novel PSS board structure proposed by the present invention.
Fig. 5 is SEM top view after a kind of etching of novel PSS board structure proposed by the present invention.
In figure: 1 unit figure, 2 exposure regions.
Specific embodiment
The technical scheme in the embodiments of the invention will be clearly and completely described below, it is clear that described implementation
Example is only a part of the embodiment of the present invention, instead of all the embodiments.
Referring to Fig.1, a kind of novel PSS board structure, PSS substrate includes unit Fig. 1 and exposure region 2, and unit Fig. 1 is exposing
Equally distributed hole is formed in light area 2, hole is up big and down small circular hole, and the surface of exposure region 2 is in roughness,
The two sides up and down of exposure region 2 are equipped with outer rim splicing overlay region.
Embodiment one
A kind of production method of novel PSS board structure, includes following steps: using the method for spin coating, coating one on PSS substrate
Layer negative photoresist, negative photoresist with a thickness of 2.0um, by photoresist exposure development, obtain with glue have circular hole
PSS substrate, see Fig. 3, then carry out dry ecthing procedure again, carve the PSS base with multiple up big and down small hexagonal holes
Plate is shown in Fig. 5.
Embodiment two
A kind of production method of novel PSS board structure, includes following steps: using the method for spin coating, coating one on PSS substrate
Layer negative photoresist, negative photoresist with a thickness of 2.1um, by photoresist exposure development, obtain with glue have circular hole
PSS substrate, see Fig. 3, then carry out dry ecthing procedure again, carve the PSS substrate with multiple hexagonal holes, see Fig. 5.
Embodiment three
A kind of production method of novel PSS board structure, includes following steps: using the method for spin coating, coating one on PSS substrate
Layer negative photoresist, negative photoresist with a thickness of 2.2um, by photoresist exposure development, to glue with circular hole
PSS substrate is shown in Fig. 3, then carries out dry ecthing procedure again, carves the PSS substrate with multiple up big and down small hexagonal holes,
See Fig. 5.
Example IV
A kind of production method of novel PSS board structure, includes following steps: using the method for spin coating, coating one on PSS substrate
Layer negative photoresist, negative photoresist with a thickness of 2.3um, by photoresist exposure development, to glue with circular hole
PSS substrate is shown in Fig. 3, then carries out dry ecthing procedure again, carves the PSS substrate with multiple up big and down small hexagonal holes,
See Fig. 5.
PSS substrate prepared by above-mentioned four groups of embodiments can increase the light-emitting angle of LED lamp bead, and light extraction efficiency is good,
Example IV is most preferred embodiment, and SEM figure of the PSS substrate obtained after photoetching, etching is shown in attached drawing 2-5.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (5)
1. a kind of novel PSS board structure, which is characterized in that the PSS substrate includes unit figure (1) and exposure region (2), and single
Bitmap (1) is evenly distributed in exposure region (2).
2. a kind of novel PSS board structure according to claim 1, which is characterized in that the surface of the exposure region (2) is in
Roughness, the two sides up and down of exposure region (2) are equipped with outer rim splicing overlay region.
3. a kind of novel PSS board structure according to claim 1, which is characterized in that the unit figure (1) is in exposure region
(2) equally distributed hole is formed in, hole is up big and down small circular concentric hole.
4. a kind of production method of novel PSS board structure, which comprises the following steps: using the method for spin coating,
One layer of negative photoresist is coated on PSS substrate, and photoresist exposure development is obtained into the PSS substrate with circular hole with glue,
Then dry ecthing procedure is carried out again, carves the PSS substrate with multiple up big and down small hexagonal holes.
5. a kind of production method of novel PSS board structure according to claim 4, which is characterized in that the negativity light
Photoresist with a thickness of 2.0~2.3um, optimum thickness 2.3um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811470642.2A CN109659410A (en) | 2018-12-04 | 2018-12-04 | A kind of novel PSS board structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811470642.2A CN109659410A (en) | 2018-12-04 | 2018-12-04 | A kind of novel PSS board structure and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109659410A true CN109659410A (en) | 2019-04-19 |
Family
ID=66111778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811470642.2A Pending CN109659410A (en) | 2018-12-04 | 2018-12-04 | A kind of novel PSS board structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109659410A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102520576A (en) * | 2011-11-18 | 2012-06-27 | 中国电子科技集团公司第五十五研究所 | Data split method and correction method of stepping photoetching mask plate for diagrammed substrate process |
| CN103137815A (en) * | 2013-02-28 | 2013-06-05 | 合肥彩虹蓝光科技有限公司 | Novel pattern sapphire substrate (PSS) structure and manufacturing method |
| CN104698769A (en) * | 2013-12-10 | 2015-06-10 | 上海微电子装备有限公司 | Splicing and exposure method of sapphire substrate |
| CN108321088A (en) * | 2018-02-05 | 2018-07-24 | 京东方科技集团股份有限公司 | Manufacturing method, touch base plate and the display device of touch base plate |
-
2018
- 2018-12-04 CN CN201811470642.2A patent/CN109659410A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102520576A (en) * | 2011-11-18 | 2012-06-27 | 中国电子科技集团公司第五十五研究所 | Data split method and correction method of stepping photoetching mask plate for diagrammed substrate process |
| CN103137815A (en) * | 2013-02-28 | 2013-06-05 | 合肥彩虹蓝光科技有限公司 | Novel pattern sapphire substrate (PSS) structure and manufacturing method |
| CN104698769A (en) * | 2013-12-10 | 2015-06-10 | 上海微电子装备有限公司 | Splicing and exposure method of sapphire substrate |
| CN108321088A (en) * | 2018-02-05 | 2018-07-24 | 京东方科技集团股份有限公司 | Manufacturing method, touch base plate and the display device of touch base plate |
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| PB01 | Publication | ||
| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20190419 |