CN109659301A - 一种阵列聚焦式激光传能光电接收设备 - Google Patents
一种阵列聚焦式激光传能光电接收设备 Download PDFInfo
- Publication number
- CN109659301A CN109659301A CN201811452567.7A CN201811452567A CN109659301A CN 109659301 A CN109659301 A CN 109659301A CN 201811452567 A CN201811452567 A CN 201811452567A CN 109659301 A CN109659301 A CN 109659301A
- Authority
- CN
- China
- Prior art keywords
- substrate
- laser
- power supply
- battery chip
- supply single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 230000005622 photoelectricity Effects 0.000 claims abstract description 5
- 230000005540 biological transmission Effects 0.000 claims description 13
- 239000010410 layer Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000012546 transfer Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/165—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明属于激光无线能量传输领域,公开了一种阵列聚焦式激光传能光电接收设备,包括光子电源单体、下基板,所述光子电源单体设置于下基板上并紧密无间隙排布为光子电源单体阵列形式;所述光子电源单体包括激光电池芯片、二极管、上基板和聚焦透镜,所述激光电池芯片通过导电胶贴装在上基板上,所述激光电池芯片与二极管反并联连接,所述激光电池芯片、二极管、上基板封装在聚焦透镜内部,所述上基板焊接在下基板的焊盘上。本发明使得电池芯片之间缝隙上的激光可以聚焦在电池光敏面上,提高光电池表面利用效率,提高整体转换效率。
Description
技术领域
本发明涉及激光无线能量传输领域,具体涉及一种阵列聚焦式激光传能光电接收设备。
背景技术
激光无线能量传输技术是以高能光光束作为能量载体,利用高效的电光、光电转换,实现对远端特定设备的非接触能量供给的技术。相对于电磁耦合、磁共振能量传输等形式,激光无线能量传输可以实现更远的传输距离;相对于微波无线能量传输形式,激光无线能量传输装置体积、重量更小,转换效率更高,非常适于对远端的小型目标的静态、动态能量传输。目前,欧、美、日等均对激光无线能量传输进行了大量研究。
由于激光无线能量传输系统接收装置光功率密度远大于太阳光强度,一般采用特定的小尺、激光电池实现激光-电能转化,由于光电池单体尺寸较小。传统光电接收靶面封装工艺是将单体激光电池通过表面贴装技术(SMT)等工艺,直接焊接在光电接收靶面基板上,在面阵封装过程中,电池与电池之间的缝隙占比较大(一般为光电接收靶面的18~25%),造成光电接收靶面光电池有效面积较小,严重影响了光电接收靶面整体光电转换效率。
发明内容
本发明的目的是针对激光无线能量传输系统光电接收板在设计中,由于激光电池单体尺寸较小,整体铺装过程中,电极、间隙等光电转换无效面积大,整体光电有效面积占空比小,影响激光无线能量传输系统光电转换接收板的整体光电转换效率。发明一种阵列聚焦式激光传能光电接收设备,实现对缝隙能量的折射、聚焦和吸收转换。
为了实现上述目的,本发明的技术方案是:一种阵列聚焦式激光传能光电接收设备,其特征在于:包括光子电源单体、下基板,所述光子电源单体设置于下基板上并紧密无间隙排布为光子电源单体阵列形式;
所述光子电源单体包括激光电池芯片、二极管、上基板和聚焦透镜,所述上基板包括基板正极、基板负极和基板绝缘层,所述基板绝缘层分别设于基板正极和基板负极之间和四周,用于将基板正极和基板负极绝缘,所述基板正极和基板负极中心设有导电夹层,所述激光电池芯片通过导电胶贴装在基板负极上表面,所述二极管固定在激光电池芯片四周,并与激光电池芯片反并联连接,所述激光电池芯片的正极通过导线连接基板正极,所述激光电池芯片、二极管、上基板封装在聚焦透镜内部,所述上基板焊接在下基板的焊盘上。
进一步地;所述聚焦透镜材料为透光热固胶或树脂,优选环氧树脂。
进一步地;所述聚焦透镜为球面或柱面透镜,其中曲面向上凸起或向下凹陷。
进一步地;所述聚焦透镜为菲涅尔透镜。
进一步地;所述下基板材料为树脂板、PCB板或金属板。
本发明的有益效果:
1)光子电源单体内部同时封装与激光电池芯片反并联的二极管,提高单个光子电源单体的可靠性,当发生电池衰变,失效时,通过旁路二极管,可以实现对故障电池的隔离,提高整个激光接收电池板的可靠性;
2)利用树脂透镜结构,对入射光束进行折射,使得电池芯片之间缝隙上的激光可以聚焦在电池光敏面上,提高光电池表面利用效率,提高整体转换效率;
3)改用两级加工工艺,在完成光子电源单体封装后,可以根据要求,灵活进行激光电池靶面形状设计,提高灵活性。
附图说明
图1是本发明立体结构示意图;
图2是本发明主视图;
图3是本发明俯视图;
图4是本发明左视图;
图5是光子电源单体的剖视图。
图中:光子电源单体1,下基板2,激光电池芯片3,二极管4,上基板5,聚焦透镜6,基板正极51,基板负极52,基板绝缘层53,导电夹层54。
具体实施方式
实施例:
如图1至图5所示,一种阵列聚焦式激光传能光电接收设备,包括光子电源单体1、下基板2,所述光子电源单体1设置于下基板2上并紧密无间隙排布为光子电源单体1阵列形式;
所述光子电源单体1包括激光电池芯片3、二极管4、上基板5和聚焦透镜6,所述上基板5包括基板正极51、基板负极52和基板绝缘层53,所述基板绝缘层53分别设于基板正极51和基板负极52之间和四周,用于将基板正极51和基板负极52绝缘,所述基板正极51和基板负极52中心设有导电夹层54,所述激光电池芯片3通过导电胶贴装在基板负极52上表面,所述二极管4固定在上基板5上并设于激光电池芯片3四周,所述二极管4与激光电池芯片3反并联连接,所述激光电池芯片3的正极通过金丝导线连接基板正极51,所述激光电池芯片3、二极管4、上基板5封装在聚焦透镜6内部,所述上基板5焊接在下基板2的焊盘上。
所述聚焦透镜6为球面透镜,其曲面向上凸起,其材料为环氧树脂。所述下基板2材料金属板。
所述阵列聚焦式激光传能光电接收设备的制备方法,包括以下步骤:
1)封装激光电池颗粒:
①首选对激光电池芯片3进行清洗和检查,确认无物理损坏;
②然后通过导电胶将激光电池芯片3贴装在基板负极52上表面;
③使用金丝导线在激光电池芯片3的正极和基板正极51上进行焊线,完成后做推拉力测试,保证其可承载大电流且达到规定的焊接强度;
④将二极管4固定在激光电池芯片3四周,并与激光电池芯片3反并联连接;
⑤根据入射光束质量,以及激光电池芯片3无效面积尺寸,设计透镜结构,以保证入射光聚焦光与电池片光敏面面积偏差不超过5%;
⑥根据设计的透镜尺寸,加工注胶模具;
⑦在进行激光电池芯片3、二极管4、上基板5封装时,将注胶模具加工为具有聚焦效果的透镜结构腔体,进行注胶成形;
⑧完成注胶、固化后,对光子电源单体1进行切单处理,形成光子电源单体1。
2)制备激光电池接收阵列下基板2:
①根据激光传能系统传输距离,传输功率、光斑尺寸等指标,设计激光电池接收阵列下基板2,并根据光斑分布情况,设计下基板2上电池链接关系;
②根据电池链接关系设计相应的焊盘和导线。
3)光子电源单体1与下基板2集成:将封装完成的光子电源单体1与下基板2的焊盘结构焊接,利用集成电路工艺,将光子电源单体1与下基板2进行整合加工,完成光电池板的加工。
以上所述的实施例只是本发明较佳的方案,并非对本发明作任何形式上的限制,在不超出权利要求所记载的技术方案的前提下还有其它的变体及改型。
Claims (5)
1.一种阵列聚焦式激光传能光电接收设备,其特征在于:包括光子电源单体、下基板,所述光子电源单体设置于下基板上并紧密无间隙排布为光子电源单体阵列形式;
所述光子电源单体包括激光电池芯片、二极管、上基板和聚焦透镜,所述上基板包括基板正极、基板负极和基板绝缘层,所述基板绝缘层分别设于基板正极和基板负极之间和四周,用于将基板正极和基板负极绝缘,所述基板正极和基板负极中心设有导电夹层,所述激光电池芯片通过导电胶贴装在基板负极上表面,所述二极管固定在激光电池芯片四周,并与激光电池芯片反并联连接,所述激光电池芯片的正极通过导线连接基板正极,所述激光电池芯片、二极管、上基板封装在聚焦透镜内部,所述上基板焊接在下基板的焊盘上。
2.根据权利要求1所述的阵列聚焦式激光传能光电接收设备,其特征在于:所述聚焦透镜材料为透光热固胶或树脂,优选环氧树脂。
3.根据权利要求1所述的阵列聚焦式激光传能光电接收设备,其特征在于:所述聚焦透镜为球面或柱面透镜,其中曲面向上凸起或向下凹陷。
4.根据权利要求1所述的阵列聚焦式激光传能光电接收设备,其特征在于:所述聚焦透镜为菲涅尔透镜。
5.根据权利要求1所述的阵列聚焦式激光传能光电接收设备,其特征在于:所述下基板材料为树脂板、PCB板或金属板。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811452567.7A CN109659301B (zh) | 2018-11-30 | 2018-11-30 | 一种阵列聚焦式激光传能光电接收设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811452567.7A CN109659301B (zh) | 2018-11-30 | 2018-11-30 | 一种阵列聚焦式激光传能光电接收设备 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109659301A true CN109659301A (zh) | 2019-04-19 |
CN109659301B CN109659301B (zh) | 2021-04-16 |
Family
ID=66111131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811452567.7A Active CN109659301B (zh) | 2018-11-30 | 2018-11-30 | 一种阵列聚焦式激光传能光电接收设备 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109659301B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114682910A (zh) * | 2022-05-13 | 2022-07-01 | 东莞市中麒光电技术有限公司 | 采用透镜阵列的晶粒焊接装置及焊接方法 |
CN115077307A (zh) * | 2022-07-13 | 2022-09-20 | 河北砺兵科技有限责任公司 | 一种多模式自动报靶靶机和方法 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1747192A (zh) * | 2004-09-09 | 2006-03-15 | 丰田合成株式会社 | 发光装置 |
CN101937937A (zh) * | 2010-08-27 | 2011-01-05 | 成都钟顺科技发展有限公司 | 复眼式聚光太阳电池组件及其制造工艺 |
CN102044585A (zh) * | 2009-10-20 | 2011-05-04 | 安科太阳能公司 | 使用iii-v族半导体太阳能电池的聚光式光伏系统模块 |
CN102647115A (zh) * | 2012-05-07 | 2012-08-22 | 李万红 | 水冷式聚光光伏太阳能发电场 |
CN202841007U (zh) * | 2012-05-05 | 2013-03-27 | 李万红 | 聚光光伏太阳能发电、供热机 |
JP2013172104A (ja) * | 2012-02-22 | 2013-09-02 | Sharp Corp | 集光型太陽光発電モジュール及びその製造方法 |
CN103633172A (zh) * | 2013-11-05 | 2014-03-12 | 成都聚合科技有限公司 | 一种带保护功能的大电流聚光光伏光电转换专用接收器 |
CN203747745U (zh) * | 2014-01-07 | 2014-07-30 | 武汉凹伟能源科技有限公司 | 一种高倍聚光太阳能发光模组 |
CN204408258U (zh) * | 2015-02-14 | 2015-06-17 | 闽江学院 | 一种用于太阳能电池聚光的非球面光锥 |
CN105051452A (zh) * | 2013-03-15 | 2015-11-11 | 摩根阳光公司 | 太阳光聚集和获取装置 |
CN107851680A (zh) * | 2015-08-03 | 2018-03-27 | 住友电气工业株式会社 | 聚光型光伏单元、聚光型光伏模块、聚光型光伏面板以及聚光型光伏装置 |
CN107959470A (zh) * | 2016-10-18 | 2018-04-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | 聚光装置及聚光模组 |
US10069275B1 (en) * | 2017-10-26 | 2018-09-04 | Namuga Co., Ltd. | Beam projector module using laser |
-
2018
- 2018-11-30 CN CN201811452567.7A patent/CN109659301B/zh active Active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1747192A (zh) * | 2004-09-09 | 2006-03-15 | 丰田合成株式会社 | 发光装置 |
CN102044585A (zh) * | 2009-10-20 | 2011-05-04 | 安科太阳能公司 | 使用iii-v族半导体太阳能电池的聚光式光伏系统模块 |
CN101937937A (zh) * | 2010-08-27 | 2011-01-05 | 成都钟顺科技发展有限公司 | 复眼式聚光太阳电池组件及其制造工艺 |
JP2013172104A (ja) * | 2012-02-22 | 2013-09-02 | Sharp Corp | 集光型太陽光発電モジュール及びその製造方法 |
CN202841007U (zh) * | 2012-05-05 | 2013-03-27 | 李万红 | 聚光光伏太阳能发电、供热机 |
CN102647115A (zh) * | 2012-05-07 | 2012-08-22 | 李万红 | 水冷式聚光光伏太阳能发电场 |
CN105051452A (zh) * | 2013-03-15 | 2015-11-11 | 摩根阳光公司 | 太阳光聚集和获取装置 |
CN103633172A (zh) * | 2013-11-05 | 2014-03-12 | 成都聚合科技有限公司 | 一种带保护功能的大电流聚光光伏光电转换专用接收器 |
CN203747745U (zh) * | 2014-01-07 | 2014-07-30 | 武汉凹伟能源科技有限公司 | 一种高倍聚光太阳能发光模组 |
CN204408258U (zh) * | 2015-02-14 | 2015-06-17 | 闽江学院 | 一种用于太阳能电池聚光的非球面光锥 |
CN107851680A (zh) * | 2015-08-03 | 2018-03-27 | 住友电气工业株式会社 | 聚光型光伏单元、聚光型光伏模块、聚光型光伏面板以及聚光型光伏装置 |
CN107959470A (zh) * | 2016-10-18 | 2018-04-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | 聚光装置及聚光模组 |
US10069275B1 (en) * | 2017-10-26 | 2018-09-04 | Namuga Co., Ltd. | Beam projector module using laser |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114682910A (zh) * | 2022-05-13 | 2022-07-01 | 东莞市中麒光电技术有限公司 | 采用透镜阵列的晶粒焊接装置及焊接方法 |
CN115077307A (zh) * | 2022-07-13 | 2022-09-20 | 河北砺兵科技有限责任公司 | 一种多模式自动报靶靶机和方法 |
Also Published As
Publication number | Publication date |
---|---|
CN109659301B (zh) | 2021-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2007130796A2 (en) | Solar concentrating photovoltaic device with resilient cell package assembly | |
CN101548394A (zh) | 光伏模组及其应用 | |
CN101719738A (zh) | 高效太阳能聚光光伏系统 | |
CN109659301A (zh) | 一种阵列聚焦式激光传能光电接收设备 | |
Martínez et al. | 4-terminal CPV module capable of converting global normal irradiance into electricity | |
CN201893362U (zh) | 用于聚光光伏系统的二次聚光电池封装模组 | |
CN103490720A (zh) | 一种高光伏发电率的聚光太阳能光伏电池 | |
CN103137762A (zh) | 一种太阳能聚光光伏发电组件 | |
CN106785856A (zh) | 基于光电池阵列电路优化的激光输能光电转换增效方法 | |
CN113488455B (zh) | 抗干扰的高速光接收器件 | |
CN204792847U (zh) | 聚光光伏太阳能玻璃底板组件 | |
CN102034886B (zh) | 一种二次聚光太阳能光伏装置 | |
WO2014037721A1 (en) | Concentrated photovoltaic (cpv) cell arrangement, module and method of fabrication | |
CN101882641B (zh) | 一种低倍聚光的光伏组件 | |
CN201733249U (zh) | 一种低倍聚光的光伏组件 | |
CN201278350Y (zh) | 高功率聚光型太阳能光伏组件 | |
CN215933618U (zh) | 一种太阳能电子板易固式电池盖板 | |
CN206977380U (zh) | 一种聚光型太阳能专用二极管 | |
CN204834643U (zh) | 一种太阳能光伏光热建筑一体化模块 | |
CN106887715A (zh) | 一种自供电卫星锅 | |
CN110265781A (zh) | 一种5g太阳能天线 | |
CN110429152B (zh) | 一种基于衍射光学元件的光伏模块及其制作方法 | |
CN204216836U (zh) | 聚光型晶体硅光伏发电系统 | |
CN205159345U (zh) | 一种球形聚光器以及该聚光器的安装结构 | |
CN204614801U (zh) | 太阳能接收器组件结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |