CN109658837A - Semiconductor device and the method for driving semiconductor device - Google Patents
Semiconductor device and the method for driving semiconductor device Download PDFInfo
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- CN109658837A CN109658837A CN201810278322.0A CN201810278322A CN109658837A CN 109658837 A CN109658837 A CN 109658837A CN 201810278322 A CN201810278322 A CN 201810278322A CN 109658837 A CN109658837 A CN 109658837A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3266—Details of drivers for scan electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Abstract
A kind of semiconductor device includes one first display unit and one second display unit.First display unit includes a first substrate, including one first display area, and wherein first substrate has a first side and the second side relative to first side；Multiple first luminescence units are located in the first display area；And a first grid driving circuit, it is located in the first display area.Second display unit is arranged adjacent to the first display unit.Second display unit includes a second substrate, including one second display area, and wherein the second substrate has a third side and the four side relative to third side；Multiple second luminescence units are located in the second display area；And a second grid driving circuit, it is located in the second display area.
Description
Technical field
The present invention relates generally to a kind of semiconductor device and its driving method, espespecially a kind of half with multiple display units
Conductor device and its driving method.
Background technique
Method of the display screen as Dynamically Announce advertisement has been generallyd use in recent years.It is limited to the size of display screen,
An independent display screen is difficult to be utilized to show the advertisement of large area.
In order to solve the problem above-mentioned, the side that multiple display screens are spliced into a screen wall is utilized in known technology
Formula shows the advertisement of large area.However, since a display screen is in having the frame that can not show image on display surface,
The lines of trellis can be presented on image shown by screen wall, and then affect the quality of image shown by screen wall.
Therefore, although current display screen has met its purpose used, not yet meet wanting for many other aspects
It asks.Accordingly, it is desirable to provide the improvement project of display screen.
Summary of the invention
Present disclose provides a kind of semiconductor devices, including one first display unit and one second display unit.First
Display unit includes a first substrate, including one first display area, and wherein first substrate has a first side and opposite
In a second side of first side；Multiple first luminescence units are located in the first display area；And one first grid driving
Circuit is located in the first display area.
Above-mentioned second display unit is arranged adjacent to the first display unit.Second display unit includes a second substrate, packet
One second display area is included, wherein the second substrate has a third side and the four side relative to third side；It is more
A second luminescence unit is located in the second display area；And a second grid driving circuit, it is located in the second display area.
Present disclose provides a kind of methods for driving semiconductor device, including provide one first display unit, wherein first
Display unit includes a first side；A second side relative to first side；Between first side and second side
One first display area；The multiple first driving transistors being set in the first display area；It is set to the first display area
In multiple first luminescence units；And it is set to a first circuit board of first side.
The method of above-mentioned driving semiconductor device, which further includes, provides one second display unit, wherein the second display unit includes
Adjacent to a third side of second side；A four side relative to third side；Positioned at third side and four side
Between one second display area；The multiple second driving transistors being set in the second display area；It is set to the second display
Multiple second luminescence units in region；And it is set to a second circuit board of four side.First driving transistor is sequentially
It is opened by second side to first side, and the second driving transistor is sequentially opened by four side to third side.
Detailed description of the invention
For the above objects, features and advantages of the present invention can be clearer and more comprehensible, below in conjunction with attached drawing to tool of the invention
Body embodiment elaborates, in which:
Figure 1A is the schematic diagram according to the semiconductor device of the disclosure in some embodiments.
Figure 1B is the rough schematic view according to the semiconductor device of the disclosure in some embodiments.
Fig. 1 C is the rough schematic view according to the semiconductor device of the disclosure in some embodiments.
Fig. 2 is the schematic diagram according to the display unit of the disclosure in some embodiments.
Fig. 3 is the method according to the driving semiconductor device of the disclosure in some embodiments.
Fig. 4 is the schematic diagram according to the display unit of the disclosure in some embodiments.
Fig. 5 is the schematic diagram according to the semiconductor device of the disclosure in some embodiments.
Fig. 6 is the schematic diagram according to the luminescence unit of the disclosure in some embodiments.
Fig. 7 is the schematic diagram according to the control circuit of the disclosure in some embodiments.
Fig. 8 is the schematic diagram according to the display unit of the disclosure in some embodiments.
Component label instructions are as follows in figure:
Semiconductor device A1
Display unit 1,1b, 1d, 1e, 1f, 1g
Display unit (the first display unit) 1a
Display unit (the second display unit) 1c
Substrate 10,10a, 10b, 10c, 10d
Side 13,14
Side (first side, four side) 11
Side (second side, third side) 12
Major surfaces 15
The back side 16
Groove 17
Conductive pad 18
Cut away section 19
Luminescence unit (the first luminescence unit, the second luminescence unit) 20
Initial luminous unit 20a
Terminal luminescence unit 20b
Shine ontology 21
First electrode 22
Second electrode 23
Lower surface 24
Circuit board (first circuit board, second circuit board) 30
Circuit board 30a, 30c
Data driver 40
Gate driving circuit 50
Level display switch controller 60
Vertically displayed switch controller 70
Test circuit 80
Signal device B1
Level display switching module B10
Vertically displayed switching module B20
Capacitor C1, C2, C3
Testing capacitor C4, C5
First direction D1
Second direction D2
Distance d1, d2
Control circuit E1
Height difference H 1
Opening direction S1, S2, S3, S4
Drive transistor (the first driving transistor, the second driving transistor) T1
Drive transistor T10, T20, T30, T40
Initial driving transistor T1a
Terminal drives transistor T1b
Gate terminal T31, T41
Second end T32, T42
Third end T33, T43
Through-hole V1
Length W1, W2
Display area (the first display area, the second display area) Z1
Control area Z2
Specific embodiment
The following description provides many different embodiments or example, for implementing different characteristic of the invention.With
Element and arrangement mode described in lower specific examples, the expression present invention for only being used to simplify, only as an example, and are not used
To limit the present invention.For example, the description of structure of the fisrt feature above a second feature includes the first and second spies
It directly contacts between sign, or is set between the first and second features with another feature, so that the first and second features are simultaneously
It is not directly to contact.
In addition, this specification has continued to use identical element numbers and/or text in different examples.It is above-mentioned to continue to use only
In order to simplified and clear, being not offered as must be relevant between different embodiment and setting.
In the spatially relevant vocabulary that this is used, such as above or below etc., only to one in simple description schema
The relationship of element or a feature relative to another elements or features.Other than the arrangement method described in schema, it is included in difference
Arrangement method use or operation device.Shape, size, thickness and inclined angle in schema may be in order to clear
Purpose that Chu illustrates and draw or be simplified not according to ratio, purposes of discussion is only provided.
Figure 1A, Figure 1B and Fig. 1 C are the schematic diagram according to the semiconductor device A1 of the disclosure in some embodiments, wherein
Figure 1B and Fig. 1 C is the simplification of Figure 1A.Fig. 2 is the schematic diagram according to the display unit 1 of the disclosure in some embodiments.Partly lead
Body device A1 can be used to show an overall image.In some embodiments, semiconductor device A1 can be a display equipment.Semiconductor
Device A1 includes multiple display units 1.Display unit 1 can arrange in array fashion, and display unit 1 shows above-mentioned whole shadow
A part of picture.In other words, display unit 1 is to show a part of image, and above-mentioned partial image is spliced into above-mentioned entirety
Image.Above-mentioned overall image and partial image can be a static image or a dynamic image.
As shown in Figure 1A, semiconductor device A1 can be arranged with the array manner of M x N, and above-mentioned M and N are positive integer, and M with
N is greater than or equal to 1.In some embodiments, when M is equal to 1, N is greater than or equal to 2, and M is greater than or equal to 2 when N is equal to 1.
In some embodiments, M be between 1 to 30 range, and N be between 1 to 30 range.For example, it partly leads
Body device A1 can be 1x 2,1x 3,2x 1,2x 2,2x 3,3x 1,3x 2 or 3x 3, and but not limited to this.Such as Figure 1A institute
Show, semiconductor device A1 can be arranged with the array manner of 2x 2.
Display unit 1 may include Organic Light Emitting Diode (OLED), micro-led (Micro LED, mini
LED), liquid crystal (liquid crystal, LC), quantum dot (quant μm of dot, QD), fluorescent (fluorescence) material, phosphorus
Light (phosphor) material, light emitting diode (light-emitting diode, LED) or other display mediums, but the disclosure
It is not limited thereto.In some embodiments, display unit 1 may be, for example, flexible display device (flexible display), touching
Display device (touch display) or curved-surface display device (curved display) are controlled, but the disclosure is not limited thereto.
Display unit 1 includes a substrate 10, multiple luminescence units 20, a circuit board 30, a data driver 40, Yi Jiyi
Gate driving circuit 50.In this present embodiment, display unit 1 can be of the same size, structure and/or element, so as to saving
The cost of manufacture of semiconductor device A1.In some embodiments, display unit 1 can have different according to different designs demand
Size, structure and/or element.
Substrate 10 can be rigid substrate, flexible base plate or mixing substrate.Rigid substrate, can be for example made by glass material
At.In some embodiments, the sizes and/or shapes of the substrate 10 of display unit 1 can be equal.In some embodiments, substrate
10 can be a rectangle, a polygon, a round, ellipse or irregular shape, but be not limited thereto.In some implementations
In example, the sizes and/or shapes of the substrate 10 of display unit 1 can be able to be according to different designs demand, sizes and/or shapes
It is unequal, but be not limited thereto.
In some embodiments, substrate 10 can be an arc.The semiconductor device being spliced into via multiple display units 1
A1 can be cylindric or dome-shaped semiconductor device A1.In some embodiments, it is spliced into via multiple display units 1
Semiconductor device A1 can be irregular semiconductor device A1, but be not limited thereto.
In this present embodiment, substrate 10 can be a rectangle.Substrate 10 have a side 11, a side 12, a side 13, with
And a side 14.Side 11 and side 12 can extend along a first direction D1.In other words, side 11 can be parallel to side
12.Side 13 and side 14 can be arranged along a second direction D2.In other words, side 13 can be parallel to side 14.Above-mentioned
One direction D1 may differ from second direction D2.In some embodiments, first direction D1 can be vertical with second direction D2.Cause
This, side 11 and side 12 can be perpendicular to side 13 and sides 14, but the disclosure is not limited.
Substrate 10 can have an a display area Z1 and control area Z2.Control area Z2 can be placed in the side of substrate 10
On side 11.From the point of view of overlook direction, display area Z1 accounts for 90% or 95% of substrate 10 or more.Control area Z2 10% or
5% or less.
Luminescence unit 20 can be arranged in array fashion in the Z1 of display area.In this present embodiment, display area Z1
Area can be the area of display image.Therefore on the major surfaces 15 of substrate 10, the region except the Z1 of display area is not
It can show image.In other words, the region except the Z1 of display area forms the frame of display unit 1.
For simplicity purposes, a display area Z1 only depicts 30 luminescence units 20 in Figure 1A and Fig. 2.However,
The number of luminescence unit 20 is not limited thereto.In some embodiments, the number of luminescence unit 20 can for 2,000,000 or more,
4000000 or more or 8,000,000 or more, but not limited to this.
Light of the luminescence unit 20 to issue a color.For example, luminescence unit 20 can be used to issue a feux rouges,
One yellow light, a green light or a blue light.The multiple luminescence units 20 for issuing the light of a variety of different colours form the one of an image
Pixel (pixel).
In this present embodiment, luminescence unit 20 can be light emitting diode (LED).In some embodiments, luminescence unit 20
It may include micro-led (Micro LED, mini LED), Organic Light Emitting Diode (OLED), (quant μm of quantum dot
Dot, QD), fluorescent (fluorescence) material, phosphorescence (phosphor) material, but be not limited thereto.Some embodiments
In, the chip size of light emitting diode is about 300 microns (μm) to 10 millimeters (mm), micro-led (mini LED's)
Chip size is about 100 microns (μm) to 300 microns (μm), and the chip size of micro-led (micro LED) is about 1
Micron (μm) is to 100 microns (μm), but the disclosure is not limited thereto.
Since luminescence unit 20 is the light for issuing at least one color self, display unit 1 can in this present embodiment
Backlight module is not needed.For example, luminescence unit can be sending blue light, the light of red, blue, green or white.In some
In embodiment, luminescence unit 20 can issue the light of the light of same color also capable of emitting different colours, and but the present disclosure is not limited thereto.
In some embodiments, display unit 1 can not need the liquid crystal structure being set on substrate 10 and light guide plate, can also be not required to
It is set to the light source of the side of substrate 10, and then reduces the area of the frame of display unit 1, achievees the effect that narrow frame (such as
Shown in Figure 1A and Fig. 2).
In this present embodiment, luminescence unit 20 is electrically connected at least one driving transistor T1.Drive transistor T1 setting
In on the display area Z1 of substrate 10, and be electrically connected at luminescence unit 20, data driver 40 with door gate driving circuit
50.Above-mentioned driving transistor T1 can be thin film transistor (TFT).As shown in Fig. 2, circuit board 30 is connected to substrate 10, and control can be located at
In region Z2 processed.Circuit board 30 is for electrically connecting to a signal device B1.Signal device B1 via circuit board 30 to transmit not
Same video signal is in luminescence unit 20.Data driver 40 may be disposed on circuit board 30, and be electrically connected driving transistor
T1 and circuit board 30.Data driver 40 is to foundation image signal transmitting data-signal in driving transistor T1.
Gate driving circuit 50 is set on the Z1 of display area, and is electrically connected driving transistor T1 and circuit board 30.
Gate driving circuit 50 is to foundation image signal transmitting grid signal in driving transistor T1.In this present embodiment, grid drives
Dynamic circuit 50 can be GIA (Gate driver in Array) driving circuit, the grid integrated circuits as driven (Gate IC)
Function is integrated into the circuit in the Z1 of display area.In this present embodiment, D2 extends gate driving circuit 50 in a second direction, and
Positioned at the center of display area Z1.The position of gate driving circuit 50 in the present embodiment is only illustrated can be in other embodiments
Any position of display area Z1.In some embodiments, gate driving circuit 50 can be located at the side of display area Z1.
In this present embodiment, (enable) is opened by grid signal caused by gate driving circuit 50 or close
(disable) transistor T1 is driven, and by the brightness of the control luminescence unit 20 of data-signal caused by data driver 40.
In detail, when drive transistor T1 open when luminescence unit 20 issue corresponding data luminance signals light.When driving crystal
When pipe T1 is closed, luminescence unit 20 does not emit beam.
As shown in Fig. 2, gate driving circuit 50 can since gate driving circuit 50 may be disposed on the Z1 of display area
To be not necessary on the region being separately set between display area Z1 and side 11, side 12, side 13 or side 14, and then increase
The area of the display area Z1 of substrate 10, and reduce the area of the frame of substrate 10.
As shown in Fig. 2, the design of the semiconductor device A1 by the disclosure, display area Z1 may extend to or adjacent to bases
Side 12, side 13 and the side 14 of plate 10.In some embodiments, display area Z1 has maximum in a second direction d 2
Length W1, the minimum range d1 between display area Z1 and side 12 are smaller than the 1% of maximum length W1.In some embodiments
In, the minimum range d1 between display area Z1 and side 12 may be less than or equal to 5 millimeters (mm).In some embodiments, show
Show reducible 0 millimeter of minimum range d1 between region Z1 and side 12.Above-mentioned distance d1 and length W1 is on second direction D2
It measures.
In addition, display area Z1 has maximum length W2 in the first direction dl, between display area Z1 and side 13
Minimum range d2 is less than the 1% of maximum length W2.Minimum range in some embodiments, between display area Z1 and side 13
D2 may be less than or equal to 5 millimeters.In some embodiments, the minimum range d2 between display area Z1 and side 13 can be 0 milli
Rice.Display area Z1 has maximum length W2, the minimum range d3 between display area Z1 and side 14 in the first direction dl
Less than the 1% of maximum length W2.
In some embodiments, the minimum range d3 between display area Z1 and side 14 may be less than or equal to 5 millimeters.In
In some embodiments, in the first direction dl, the minimum range d3 between display area Z1 and side 14 can be 0 millimeter.It is above-mentioned
Distance d2, d3 and maximum length W2 measured on first direction D1.Above-mentioned distance d2, d3 also can be equal to display unit 1
Frame length.
When the distance between different display unit 1 and display area Z1 d1, d2 or d3 are controlled at 5 millimeters or less, half
Less likely there are trellis lines on human eye vision in overall image shown by conductor device A1.As shown in Figure 1A and Fig. 2, Yu Ben
In embodiment, when multiple display units 1 put splicing in different directions, different display units 1 can be via substrate 10
Side 12, side 13 and/or side 14 connect, so that partial image shown by different display units 1 can reach thin space
Connection, or the minimization that the distance between makes partial image.
In this present embodiment, the distance between partial image may be less than or equal to 10 millimeters.In some embodiments, part
The distance between image can be 0 millimeter.So that overall image shown by semiconductor device A1 is not in trellis lines
Or the width of trellis lines can be minimized, and then promote the quality of overall image.
In some embodiments, the distance between side 12 and the side 12 of substrate 10c of substrate 10a are less than substrate 10a
Side 11 and substrate 10c the distance between side 11.In this present embodiment, since circuit board 30 is adjacent to side 11, because
The side 11 of this substrate 10 can be not connected to another substrate 10.As shown in Figure 1A, the circuit board 30a of substrate 10a is adjacent to side 11.
Therefore, the side 11 of substrate 10a and substrate 10b can be not connected to another substrate.The circuit board 30c of substrate 10c is adjacent to side 11.
Therefore, the side 11 of substrate 10c and substrate 10d can be not connected to another substrate.
Accordingly, by the design and arrangement of the display unit of the disclosure 1, may make substrate 10, (such as substrate 10a is extremely
Connection between 10d) has lesser gap, and may make substrate 10 (such as between the display area Z1 of substrate 10a to 10d)
Connection have lesser gap, and then improve semiconductor device A1 shown by overall image quality.
Fig. 1 C is the schematic diagram of multiple display units 1 with different arrangement methods.As shown in Figure 1 C, the display list of splicing
Control area Z2 or initial driving transistor T1a in first (1a, 1c, 1e, 1f) can be adjusted optionally in the position of display unit 1
It sets, and can have optimal visual effect and space utilization rate after splicing can be made.
As shown in Figure 1B, the above-mentioned display unit 1 put with different arrangement methods may be selected and be arranged as display equipment A1.It changes
Sentence is talked about, initial to drive transistor T1a, and the same position that can be corresponded in different display units (1a~1d) is put, or can
The different location optionally corresponded in different display units (1a~1d) is put, and the present disclosure is not limited thereto.
As display unit 1a and display unit 1b display portion image, along the driving transistor of first direction D1 arrangement
T1 sequentially opens corresponding luminescence unit 20 by side 13 to side 14, and in a second direction D2 arrangement driving transistor T1 according to
Sequence opens corresponding luminescence unit 20 by side 12 to side 11.When display unit 1c and display unit 1d display portion image
When, the driving transistor T1 along first direction D1 arrangement sequentially opens corresponding luminescence unit 20 by side 14 to side 13, and
The driving transistor T1 of D2 arrangement sequentially opens corresponding luminescence unit 20 by side 11 to side 12 in a second direction.In other words
It says, the driving transistor T1 of the display unit 1 in semiconductor device A1 is opened according to opening direction S1 or opening direction S2
Corresponding luminescence unit 20.
In some embodiments, the driving transistor T1 of the display unit 1 in semiconductor device A1 can be according to opening direction
S3 opens corresponding luminescence unit 20, and can open corresponding luminescence unit 20 according to opening direction S4.Above-mentioned opening direction
S3 is in contrast to opening direction S1, and opening direction S4 is in contrast to opening direction S2.
As shown in Fig. 2, signal device B1 transmits a video signal when display unit 1 shows a part of image.Data are driven
Dynamic device 40 sequentially opens corresponding luminescence unit to control driving transistor T1 according to video signal with door gate driving circuit 50
20.In a partial image, gate driving circuit 50 can first open initial driving transistor T1a, via data driver 40
Open the initial luminous unit 20a for corresponding to initial driving transistor T1a.Finally, gate driving circuit 50 can open one eventually
Point driving transistor T1b, and make the terminal luminescence unit corresponding to terminal driving transistor T1b via data driver 40
20b is opened.
Above-mentioned initial driving transistor T1a and terminal driving transistor T1b can be located separately the two-phase in the Z1 of display area
Diagonally.For example, in Fig. 2, initial driving transistor T1a is located at side 12 and side 13 is formed by corner.Terminal
Driving transistor T1b is located at side 11 and side 14 is formed by corner.
In addition, above-mentioned initial luminous unit 20a and terminal luminescence unit 20b be located in the Z1 of display area it is two opposite
Angle.In Fig. 2, initial luminous unit 20a is located at side 12 and side 13 is formed by corner.Terminal luminescence unit 20b
Corner is formed by side 11 and side 14.
For example, gate driving circuit 50 controls the driving transistor T1 of first row shown in Fig. 2 by initially driving crystalline substance
Body pipe T1a is sequentially opened along opening direction S1.Later, gate driving circuit 50 controls the sequentially edge driving transistor T1 of second row
Opening direction S1 is opened.The driving of last row where gate driving circuit 50 controls terminal driving transistor T1b is brilliant
Body pipe T1 is sequentially opened along opening direction S1.And data driver 40 controls luminescence unit 20 shown in Fig. 2 by initial luminous list
First 20a is sequentially opened along opening direction S2.
As shown in Fig. 2, display unit 1 further includes a horizontal display switch controller 60 and one in some embodiments
Vertically displayed switch controller 70.Level display switch controller 60 and the controllable driving of vertically displayed switch controller 70 are brilliant
The position for the initial driving transistor T1a in direction and setting that body pipe T1 is opened, and the direction that controllable luminescence unit 20 is opened
And the position of setting initial luminous unit 20a.
As shown in Fig. 2, horizontal display switch controller 60 control driving transistor T1 is sequentially opened pair along opening direction S1
The luminescence unit 20 answered, or corresponding luminescence unit 20 is sequentially opened along opening direction S3.Vertically displayed switch controller 70
Control driving transistor T1 sequentially opens corresponding luminescence unit 20 along opening direction S2, or sequentially opens along opening direction S4
Corresponding luminescence unit 20.In some embodiments, opening direction S1~S4 can be optionally by initially driving transistor T1a and end
Position where point driving transistor T1b determines, but the disclosure is not limited.
In some embodiments, above-mentioned horizontal display switch controller 60 and vertically displayed switch controller 70 can divide
Horizontal display switch controller 60 and vertically displayed switch controller 70 are not operated via mechanical switch, is shone with changing
The direction that unit 20 is opened.
As shown in Fig. 2, display unit 1 further includes a horizontal display switching module B10 and one and hangs down in some embodiments
Straight display switching module B20.It is aobvious that level display switching module B10 and vertically displayed switching module B20 can distinguish controlled level
Show the signal of switch controller 60 and vertically displayed switch controller 70.In some embodiments, horizontal display switching module
B10 and vertically displayed switching module B20 can be additional system, give horizontal display switch controller 60 and vertical respectively
70 signal of switch controller is shown to switch the direction of horizontally or vertically picture output, to change the side of the unlatching of luminescence unit 20
To.
In some embodiments, the signal of level display switch controller 60 and vertically displayed switch controller 70 is can
Signal is controlled by different transmission agreement interfaces, to change the direction of the unlatching of luminescence unit 20.For example, above-mentioned level
Show that switching module B10 and vertically displayed switching module B20 can be a program, user can be via operation, signal device B1
Carry out controlled level display switching module B10 and vertically displayed switching module B20 to generate a switching signal, it is brilliant to change driving
The direction that the direction and luminescence unit 20 that body pipe T1 is opened are opened.
Fig. 3 is the method according to the driving semiconductor device A1 of the disclosure in some embodiments.In step S101, provide
First display unit 1a, the first display unit 1a includes first side 11 and the second side 12 relative to first side 11.
There is the first display area Z1 between first side 11 and second side 12, is arranged multiple first in the first display area Z1
Drive transistor T1, multiple first luminescence units 20 and the first circuit board 30 for being set to first side 11.
In step S103, the second display unit 1c is provided.Second display unit 1c includes adjacent to the first display unit
The third side 12 of the second side 12 of 1a, and the four side 11 of the third side 12 relative to the first display unit 1a.The
Two display unit 1c include between third side 12 and four side 14 the second display area Z1.In the second display unit
Multiple second driving transistor T1, multiple second luminescence units 20 are set in the second display area Z1 of 1c and are set to the 4th
The second circuit board 30 of side 11.The first driving transistor T1 of first display unit 1a is sequentially by 11 to the first side of second side
Side 12 is opened, and the second driving transistor T1 of the second display unit 1c is sequentially opened by four side 12 to third side 11.
In addition, by the second display unit 1c, D2 is arranged adjacent to the first display unit 1a in a second direction.As shown in Figure 1A,
The third side 12 of the substrate 10c of second display unit 1c may connect to the first side of the substrate 10a of the first display unit 1a
12。
In step S101 and S103, as shown in Figure 1B, the driving transistor T1 of all display units 1 is controlled along identical
Open corresponding luminescence unit 20 in direction.
In some embodiments, the driving transistor T1 of display unit 1a is controlled sequentially by the unlatching pair of side 12 to side 11
The luminescence unit 20 answered, and corresponding luminescence unit 20 is opened by side 13 to side 14.The driving for controlling display unit 1c is brilliant
Body pipe T1 sequentially opens corresponding luminescence unit 20 by side 11 to side 12, and opens corresponding hair by side 14 to side 13
Light unit 20.
It can be simply whole by display one after the splicing of multiple display units 1 by the method for above-mentioned driving semiconductor device A1
Image.
Fig. 4 is the schematic diagram according to the display unit 1g of the disclosure in some embodiments.For simplicity purposes, in Fig. 4
In do not draw luminescence unit 20 and driving transistor T1.The display area Z1 of substrate 10 can be adjacent to the side of substrate 10
11.Circuit board 30 is not set to the major surfaces 15 (luminescence unit 20 be arranged surface) of substrate 10, and be set in contrast to
The back side 16 of major surfaces 15.Data driver 40, horizontal display switch controller 60 and vertically displayed switch controller 70
It may be disposed on the circuit board 30 at the back side 16, and by through-hole V1 is formed on the substrate 10, passed through via conductive material logical
Hole V1 and driving transistor T1 are electrically connected.The method can reduce such as 40 element of data driver and account on display unit 1g
According to area, such as elements such as data driver 40 are arranged in the back side 16 of substrate 10, can reach the effect of narrow frame.Some
In embodiment, through-hole V1 can also be used in soft board, hardboard or mixed plate.
Substrate 10 can have multiple through-hole V1 to be connected to major surfaces 15 and the back side 16.For example, through-hole V1 can benefit
It is formed on substrate 10 with glass via hole technology.In addition, conductive material can be filled in through-hole V1.Circuit board positioned at the back side 16
30 can be electrically connected the luminescence unit 20 (as shown in Figure 2) being located on major surfaces 15, driving transistor T1 (such as via through-hole V1
Shown in Fig. 2) or gate driving circuit 50.
In some embodiments, above-mentioned through-hole V1 can be via the side such as laser drill (Laser Drilling) or wet etching
Formula production.The mode that above-mentioned conductive material can be electroplated is filled in through-hole V1, or is filled out in the way of ink-jet (Ink Jet)
It fills in through-hole V1.In some embodiments, above-mentioned conductive material can be filled in through-hole V1 in a manner of wire mark.
In some embodiments, when display unit 1g is low temperature polycrystalline silicon (LTPS) display unit, driving can be first made
Transistor T1 re-forms a protective layer (not shown).Later in formation through-hole V1 on substrate 10 and protective layer.Finally carry out again
The processing procedure (LED Post Process) of light emitting diode setting.In some embodiments, if display unit 1g is by other materials
When (for example, oxide semiconductor material, polycrystalline silicon material or other suitable semiconductor materials) are formed, transistor T1 is driven
It can optionally be formed by corresponding suitable structure, the present disclosure is not limited thereto.
It is set to by by data driver 40, horizontal display switch controller 60 or vertically displayed switch controller 70
Design positioned at the back side of substrate 10 16 can further increase the area of the display area Z1 of substrate 10, and then it is single to reduce display
The area of the frame of first 1g.At this point, the substrate of another display unit also may connect to side 11.
Fig. 5 is the schematic diagram according to the semiconductor device A1 of the disclosure in some embodiments.As shown in figure 5, display unit
1a, display unit 1g and display unit 1c can in a second direction D2 arrange, and display unit 1g can be located at display unit 1a with
And between display unit 1c.Multiple display unit 1a, multiple display unit 1g and multiple display unit 1c can be respectively along first
Direction D1 arrangement.Since the circuit board 30 of display unit 1g is set to the back side 16, the side 11 of display unit 1g can connect
It may connect to the side 12 of display unit 1c in the side 12 of the side of display unit 1a 12, and display unit 1g.
In addition, the display area Z1 of display unit 1a can connect or adjacent to display unit 1g display area Z1, and it is aobvious
Show the display area Z1 of unit 1c can connect or adjacent to display unit 1g display area Z1.Therefore, semiconductor device A1 institute
The overall image of display less will appear trellis lines or can minimize the width of trellis lines, and then promote the product of overall image
Matter.
In some embodiments, the semiconductor device A1 of Fig. 5 can be formed all via display unit 1g.
Fig. 6 is the schematic diagram of the luminescence unit 20 and substrate 10 according to the disclosure in some embodiments.Luminescence unit 20 wraps
Include a luminous ontology 21, a first electrode 22 and a second electrode 23.First electrode 22 and second electrode 23 may be disposed at
The lower surface 24 of luminous ontology 21.In some embodiments, first electrode 22 is set to the center of lower surface 24, and second electrode
23 are surrounded on first electrode 22.First electrode 22 can be column structure, and second electrode 23 can be cyclic structure.Above-mentioned first electricity
Pole 22 can be P electrode, and above-mentioned second electrode 23 can be N electrode.In some embodiments, above-mentioned first electrode 22 can be N electricity
Pole, and above-mentioned second electrode 23 can be P electrode.
In this present embodiment, first electrode 22 relative to lower surface 24 height be greater than or equal to second electrode 23 relative to
The height of lower surface 24.In some embodiments, have between first electrode 22 and second electrode 23 relative to lower surface 24
One height difference H 1, and height difference H 1 is greater than or equal to 0 micron (μm), and is less than or equal to 0.5 micron (0≤d≤0.5 μm).
Substrate 10 has multiple grooves 17, and the bottom of groove 17 is equipped with a conductive pad 18.When luminescence unit 20 is connected to
When substrate 10, first electrode 22 and second electrode 23 are set in groove 17, and are contacted with conductive pad 18.In the present embodiment
In, the height due to first electrode 22 relative to lower surface 24 can be greater than or equal to height of the second electrode 23 relative to lower surface 24
Degree, it is hereby ensured that first electrodes 22 to contact conductive pad 18.If first electrode 22 can be equal to relative to the height of lower surface 24
When height of the second electrode 23 relative to lower surface 24, second electrode 23 be can contact in conductive pad 18.In addition, if first electrode 22
It, can be by pushing luminescence unit when height relative to lower surface 24 can be greater than height of the second electrode 23 relative to lower surface 24
20 to substrate 10 when, tilt luminescence unit 20 relative to substrate 10, so that second electrode 23 is contacted with conductive pad 18.Some
In embodiment, the width of groove 17 can be greater than the width of first electrode 22 or second electrode 23.
Accordingly, by the design of above-mentioned luminescence unit 20, first electrode 22 can be improved and second electrode 23 is contacted with
The chance of conductive pad 18, and then improve the yield of display unit 1.
In order to achieve the purpose that narrow frame, test circuit can be configured according to the embodiment of Fig. 7 and Fig. 8.In the reality of Fig. 7
It applies in example, will test circuit integrated in the Z1 of display area.Fig. 7 is according to the schematic diagram in some embodiments.In order to succinct
Purpose, only depicts the control circuit E1 of a corresponding luminescence unit 20 in Fig. 7, and will test circuit integrated in control circuit
In E1.In some embodiments, control circuit E1 can correspond to the luminescence unit 20 of multiple couplings.
Control circuit E1 may be coupled to a few luminescence unit 20, data driver 40, with door gate driving circuit 50
(as shown in Figure 2).Control circuit E1 can be used to receive grid signal caused by gate driving circuit 50, and receives data and drive
Data-signal caused by dynamic device 40.Control circuit E1 can control driving transistor T1 according to grid signal and open, and according to number
It is believed that number control luminescence unit 20 issues the light of different brightness.
In this present embodiment, in order in measured in the Z1 of display area all driving transistor T1 (T10, T20, T30,
T40) whether can normal operation, therefore in control circuit E1 increase testing capacitor C4, C5.The maximum capacitor of testing capacitor C4, C5
Value can for example be greater than 35uF.In this present embodiment, control circuit E1 includes simultaneously testing capacitor C4 and testing capacitor C5.Yu Yi
In a little embodiments, control circuit E1 may not include testing capacitor C4.In some embodiments, control circuit E1 may not include test
Capacitor C5.
Testing capacitor C4 can be coupled to driving transistor T10, T40, therefore can judge by the voltage of measurement capacitor C4
Drive transistor T10, T40 whether can normal operation.
In some embodiments, driving transistor T40 includes a gate terminal T41, a second end T42 and a third end
T43.Drive the gate terminal T41 of transistor T40 to receive SE signal wire (Sensing Driver), second end T42 is coupled to
Luminescence unit 20 (as shown in Figure 2), and testing capacitor C4 is coupled to third end T43.
Testing capacitor C5 is coupled to driving transistor T30, therefore can judge that driving is brilliant by the voltage of measurement capacitor C5
Whether body pipe T30 can normal operation.
In some embodiments, driving transistor T30 includes a gate terminal T31, a second end T32 and a third end
T33.Drive the gate terminal T31 of transistor T30 to receive EM signal (Emission Driver), second end T32 is coupled to survey
Capacitor C5 is tried, and third end T33 is coupled to driving transistor T40.
It accordingly, can be in the Z1 of display area by the above-mentioned capacitor C1 of the disclosure, testing capacitor C4 and testing capacitor C5
The driving transistor T1 (T10, T20, T30, T40) of circuit of measurement and control E1, and then the yield of display unit 1 can be improved.In addition,
The display unit 1 of the disclosure can be not required to outside the Z1 of display area another setting test circuit in measuring driving transistor on substrate 10
T1 can further increase the area of display area Z1, or reduce the area of the frame of substrate 10.
Fig. 8 is the schematic diagram according to the display unit 1 of the disclosure in some embodiments.Substrate 10 can further include a cut away section
19, it is connected to display area Z1.Display unit 1 can further include a test circuit 80 and be set in cut away section 19.In cut away section 19
Test circuit 80 can be electrically connected luminescence unit 20 and driving transistor T1.In this present embodiment, as driving transistor T1
When being opened with luminescence unit 20, driving transistor T1 is checked whether there is using test circuit 80 and luminescence unit 20 can not be normal
The defect of running.
The cut away section 19 of substrate 10 can be cut after having implemented checking step for luminescence unit 20 or driving transistor T1
It removes, so that display area Z1 increases the area of display area Z1 adjacent to the edge of substrate 10, and then reduces the frame of substrate 20
Area.
In conclusion the display unit of the disclosure has less frame, therefore when multiple display units are spliced into one
When semiconductor device, the trellis lines that overall image shown by semiconductor device has area less, and then entirety can be improved
The quality of image.
Above-mentioned published feature can be combined with each other in any appropriate manner with one or more published embodiments, repair
Decorations, displacement or conversion, are not limited to specific embodiment.
Although the present invention is disclosed as above with preferred embodiment, however, it is not to limit the invention, any this field skill
Art personnel, without departing from the spirit and scope of the present invention, when can make a little modification and perfect therefore of the invention protection model
It encloses to work as and subject to the definition of the claims.
Claims (11)
1. a kind of semiconductor device, comprising:
One first display unit includes:
One first substrate, including one first display area, wherein the first substrate have a first side and relative to this
One second side of a side；
Multiple first luminescence units are located in first display area；And
One first grid driving circuit is located in first display area；And
One second display unit is arranged, wherein second display unit adjacent to first display unit, comprising:
One the second substrate, including one second display area, wherein the second substrate have a third side and relative to this
One four side of three sides；
Multiple second luminescence units are located in second display area；And
One second grid driving circuit is located in second display area.
2. semiconductor device as described in claim 1, which is characterized in that first display unit further include adjacent to this first
One first circuit board of side, second display unit further include the second circuit board adjacent to the four side, and this
The distance between dual side-edge and third side are less than the distance between the first side and the four side.
3. semiconductor device as claimed in claim 2, which is characterized in that when first display unit shows image, this is more
A first luminescence unit is sequentially opened by the second side to the first side, and multiple second luminescence unit sequentially by this
It opens four side to the third side.
4. semiconductor device as claimed in claim 2, which is characterized in that the first substrate further includes a first through hole, this
Two substrates further include one second through-hole, and the first grid driving circuit is electrically connected at first circuit via the first through hole
Plate, and the second grid driving circuit is electrically connected at the second circuit board via second through-hole.
5. semiconductor device as described in claim 1, which is characterized in that one of multiple first luminescence unit, including
One first electrode and the second electrode for being surrounded on the first electrode, and the height of the first electrode be greater than or equal to this second
The height of electrode.
6. semiconductor device as claimed in claim 5, which is characterized in that have one between the first electrode and the second electrode
Difference in height, and the difference in height is greater than or equal to 0 micron, and is less than or equal to 0.5 micron.
7. semiconductor device as described in claim 1, which is characterized in that the first substrate further includes one first driving transistor
And a first capacitor, and the first driving transistor includes a gate terminal, a second end and a third end, wherein this
The second end of one driving transistor is electrically connected at one of multiple first luminescence unit, and the first capacitor electrically connects
It is connected to the third end.
8. semiconductor device as described in claim 1, which is characterized in that the first substrate further includes one second driving transistor
And one second capacitor, and the second driving transistor includes a gate terminal, a second end and a third end, wherein this
The second end of two driving transistors is electrically connected at one of second capacitor and multiple first luminescence unit.
9. a kind of method for driving semiconductor device, comprising:
One first display unit is provided, wherein first display unit includes a first side；One relative to the first side
Second side；One first display area between the first side and the second side；It is set to first display area
In it is multiple first driving transistors；Multiple first luminescence units being set in first display area；And it is set to this
One first circuit board of first side；And
One second display unit is provided, wherein second display unit includes adjacent to a third side of the second side；Phase
For a four side of the third side；One second display area between the third side and the four side；If
The multiple second driving transistors being placed in second display area；Multiple second be set in second display area shine
Unit；And it is set to a second circuit board of the four side；
Wherein this first driving transistor sequentially by the second side to the first side open, and this second driving transistor according to
Sequence is opened by the four side to the third side.
10. the method for driving semiconductor device as claimed in claim 9, which is characterized in that first display unit further includes
The first grid driving circuit being set in first display area, and second display unit further include be set to this second
A second grid driving circuit in display area.
11. the method for driving semiconductor device as claimed in claim 10, which is characterized in that first display unit further includes
One first through hole, second display unit further include one second through-hole, and the first grid driving circuit is via first through hole electricity
Property is connected to the first circuit board, and the second grid driving circuit is electrically connected at the second circuit via second through-hole
Plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/131,123 US10909914B2 (en) | 2017-10-12 | 2018-09-14 | Display device and driving method thereof having a display area in a peripheral region |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762571343P | 2017-10-12 | 2017-10-12 | |
| US62/571,343 | 2017-10-12 |
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| CN201810278322.0A Pending CN109658837A (en) | 2017-10-12 | 2018-03-30 | Semiconductor device and the method for driving semiconductor device |
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