CN109650326A - MEMS device and its manufacturing method - Google Patents
MEMS device and its manufacturing method Download PDFInfo
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- CN109650326A CN109650326A CN201811611783.1A CN201811611783A CN109650326A CN 109650326 A CN109650326 A CN 109650326A CN 201811611783 A CN201811611783 A CN 201811611783A CN 109650326 A CN109650326 A CN 109650326A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 230000001681 protective effect Effects 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000000717 retained effect Effects 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 17
- 230000005496 eutectics Effects 0.000 claims description 7
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 6
- 125000005375 organosiloxane group Chemical group 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052753 mercury Inorganic materials 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- CHBOSHOWERDCMH-UHFFFAOYSA-N 1-chloro-2,2-bis(4-chlorophenyl)ethane Chemical compound C=1C=C(Cl)C=CC=1C(CCl)C1=CC=C(Cl)C=C1 CHBOSHOWERDCMH-UHFFFAOYSA-N 0.000 claims description 3
- 101710162828 Flavin-dependent thymidylate synthase Proteins 0.000 claims description 3
- 101710135409 Probable flavin-dependent thymidylate synthase Proteins 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- PCIUEQPBYFRTEM-UHFFFAOYSA-N perfluorodecanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F PCIUEQPBYFRTEM-UHFFFAOYSA-N 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- VIFIHLXNOOCGLJ-UHFFFAOYSA-N trichloro(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC[Si](Cl)(Cl)Cl VIFIHLXNOOCGLJ-UHFFFAOYSA-N 0.000 claims description 3
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 79
- 239000010410 layer Substances 0.000 description 29
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005461 lubrication Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Micromachines (AREA)
Abstract
This application discloses a kind of MEMS device and its manufacturing methods.The manufacturing method includes forming sacrificial layer on the first substrate；Mass block is formed on sacrificial layer；It removes part mass block and forms the first groove；The cavity for reaching the surface of the first substrate is formed via the first groove removal partial sacrificial layer；The first bonding region is formed on mass block；Protective film is formed, protective film covers the surface of the first bonding region, mass block and the first substrate and the side wall of the first groove；And removal part protective film; wherein; in the step of removing protective film, it is retained positioned at the protective film of the side wall of the first groove, positioned at the protective film on the mass block surface opposite with the first substrate and positioned at the protective film of the first substrate surface because being blocked by mass block.The manufacturing method cleans the protective film on the first bonding region in the step of removing protective film, has achieved the purpose that improve package quality.
Description
Technical field
The present invention relates to field of semiconductor devices, more particularly, to a kind of MEMS device and its manufacturing method.
Background technique
MEMS (MEMS, Micro-Electro-Mechanical System) material surface prepare it is single or
The ultrathin membrane of person's polymolecular layer can significantly reduce the friction system on MEMS material surface in the case where not reducing its bearing capacity
Number, or even there is superslide state, it is the effective means for solving MEMS system lubrication problem.
Molecular film for MEMS surface lubrication mainly has (langmuir-Blodgett, LB) film and self assembly list
Layer (self-assembeld monolayer, SAM) film etc..It is assembled on the surface of the material by unimolecule using LB membrane technology, it can
Molecular assembly system is constituted, there is the advantages that performance is stable, and coefficient of friction is low, and thickness is controllable, be used for magnetic recording system
Lubrication problem, but due to LB membrane preparation method is complicated and with substrate with Van der Waals force in conjunction with, reduce the thermal stability of film and dynamic
Mechanical stability, and limit its application to a certain extent.SAM film is the novel organic super thin film that developed recently gets up.SAM film
It with stable structure and accumulates closely, has the effects that anticorrosion, reduce friction, reduce and wear, in the profit of solution MEMS system
There is biggish development potentiality in terms of sliding problem.
However, needing to carry out wafer (Wafer) grade packaging technology in some MEMS sensors, SAM film is deposited in crystal column surface
Material will seriously affect wafer-level packaging, causes package quality to be decreased obviously, phenomena such as cavity, gas leakage occurs.
Summary of the invention
In view of this, the present invention provides a kind of MEMS device and its manufacturing methods, wherein in the step of removing protective film
In, the protective film on the first bonding region is removed, has achieved the purpose that improve package quality.
According to an aspect of the present invention, a kind of manufacturing method of MEMS device is provided, comprising: formed on the first substrate
Sacrificial layer；Mass block is formed on the sacrificial layer；It removes the part mass block and forms the first groove；It is recessed via described first
Slot removes the part sacrificial layer and forms the cavity for reaching the surface of first substrate；The first key is formed on the mass block
Close area；Form protective film, the protective film cover first bonding region, the mass block and first substrate surface with
And the side wall of first groove；And the removal part protective film, wherein in the step of removing the protective film, position
In the protective film of the side wall of first groove, positioned at described in the mass block surface opposite with first substrate
It protective film and is retained due to being blocked by the mass block positioned at the protective film of first substrate surface.
Preferably, the protective film also covers the side wall of the sacrificial layer, in the step of removing the protective film, is located at
The protective film of the side wall of the sacrificial layer is retained due to being blocked by the mass block.
Preferably, the step of removing the protective film includes: to generate ultraviolet light using low-pressure quartz mercury lamp；And using institute
It states ultraviolet light and irradiates the protective film to the predetermined time, wherein the ultraviolet light and the MEMS device are in predetermined angle.
Preferably, the method for removing the protective film includes ultraviolet-ozone cleaning.
Preferably, the range of the predetermined angle includes 5 ° to 60 °.
Preferably, the predetermined angle includes 40 ° to 50 °.
Preferably, the predetermined time ranges includes 10 to 60 minutes.
Preferably, the wavelength of the ultraviolet light is selected from least one of 254nm and 185nm.
Preferably, the ratio between the depth of first groove and width are not less than 5.
Preferably, the depth of first groove and the range of the ratio between width include 5 to 30.
Preferably, the material of the protective film in organosilicon alkanes organic film and organosiloxane class organic film extremely
Few one kind.
Preferably, the material of the protective film is selected from FOTS (CF3(CF2)5(CH2)2SiCl3)、OTS(CH3(CH2)17SiCl3)、DDMS(Cl2Si(CH3)2)、MTOS(CH3Si(OCH3)3)、FOTES(CF3(CF2)5(CH2)2Si(OC2H5)3)、
FOMDS(CF3(CF2)5(CH2)2Si(CH3)Cl2)、FOMMS(CF3(CF2)5(CH2)2Si(CH3)2Cl)、PFDA(C10HF19O2)、
DMS(SiO(CH3)2) and FDTS (CF3(CF2)7(CH2)2SiCl3At least one of).
Preferably, the thickness range of the protective film includesExtremely
Preferably, further includes: form MEMS sensor, the MEMS sensor includes the second bonding region；And bonding institute
State the first bonding region and second bonding region.
Preferably, the step of forming the MEMS sensor includes that the second groove is formed on the second substrate, and described second
Groove is corresponding with the position of first groove.
Preferably, first groove is connected to second groove and the cavity.
Preferably, the mode for being bonded first bonding region and second bonding region is selected from eutectic bonding, glass powder key
At least one of conjunction, anode linkage.
Preferably, the material of first bonding region includes Al, and the material of second bonding region includes Ge.
Preferably, being bonded first bonding region and the mode of second bonding region includes Al/Ge eutectic bonding.
According to another aspect of the present invention, a kind of MEMS device is provided, comprising: the first substrate；Sacrificial layer is located at described
On first substrate；Mass block is located on the sacrificial layer；First groove is located in the mass block；Cavity, via described
The surface of one groove exposure, first substrate；First bonding region is located on the mass block；And protective film, described in covering
The side wall of first groove, the mass block surface opposite with first substrate and the surface of first substrate.
Preferably, the protective film also covers the side wall of the sacrificial layer.
Preferably, the ratio between the depth of first groove and width are not less than 5.
Preferably, the depth of first groove and the range of the ratio between width include 5 to 30.
Preferably, the material of the protective film in organosilicon alkanes organic film and organosiloxane class organic film extremely
Few one kind.
Preferably, the thickness range of the protective film includesExtremely
Preferably, further include MEMS sensor, the MEMS sensor include the second bonding region, first bonding region with
The second bonding region bonding.
Preferably, the MEMS sensor further includes the second groove on the second substrate, second groove and institute
The position for stating the first groove is corresponding.
Preferably, first groove is connected to the cavity and second groove.
Preferably, the material of first bonding region includes Al, and the material of second bonding region includes Ge.
The manufacturing method of the MEMS device provided according to the present invention, wherein in the step of removing protective film, be located at first
The protective film of the side wall of groove, positioned at the mass block surface opposite with the first substrate protective film and be located at the first substrate surface
Protective film be retained because being blocked by mass block, and be located at the first bonding region on protective film removed, make MEMS device
First bonding region can be preferably bonded with other structures, to achieve the purpose that improve wafer-level packaging quality.
In addition, the manufacturing method of MEMS device provided by the invention, since mass block can in the step of removing protective film
To block the protective film being retained, it has been optionally removed the protective film of bonding region, has not needed to add mask in this step,
Both cost is saved, production efficiency is also improved.
The present invention, instead of the mask plate of existing scheme, can remove the protective film on bonding region surface by predetermined angle,
Conducive to subsequent processing step, but do not destroy in slot and below suspended matter gauge block bottom protection, achieve the purpose that protection.
There is the problems such as contraposition, template size precision is not high using the method for mask plate in prior art.Meanwhile mask plate
Technique can destroy the MEMS device with movable structure, affect the yield of product.
Detailed description of the invention
In order to illustrate more clearly of the technical solution of the embodiment of the present disclosure, simple be situated between will be made to the attached drawing of embodiment below
It continues, it should be apparent that, the attached drawing in description below only relates to some embodiments of the present disclosure, rather than the limitation to the disclosure.
Fig. 1 a shows the manufacturing method schematic diagram of the MEMS device of the embodiment of the present invention.
Fig. 1 b shows the manufacturing method schematic diagram of the MEMS structure of the MEMS device of the embodiment of the present invention.
Fig. 2 to Fig. 8 shows the section signal in a part of stage in the manufacturing method of the MEMS device of the embodiment of the present invention
Figure.
Specific embodiment
Hereinafter reference will be made to the drawings is more fully described invention.In various figures, identical element uses similar attached drawing
Label is to indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.In addition, may be not shown in figure
Certain well known parts.
Many specific details of invention, such as structure, material, size, the treatment process of component are described hereinafter
And technology, to be more clearly understood that invention.But it just as the skilled person will understand, can not be according to this
A little specific details are invented to realize.
It should be appreciated that being known as being located at another floor, another area when by a floor, a region when describing the structure of component
When domain " above " or " top ", can refer to above another layer, another region, or its with another layer, it is another
Also comprising other layers or region between a region.Also, if by part turnover, this layer, a region will be located at it is another
Layer, another region " following " or " lower section ".
Fig. 1 a shows the manufacturing method schematic diagram of the MEMS device of the embodiment of the present invention.In the following description, it will tie
Fig. 2 to Fig. 8 is closed the manufacturing method of the MEMS device of the embodiment of the present invention is described in detail.
In step S01, MEMS structure is formed.As shown in Figure 1 b, it can be formed by following steps S011 to S015
MEMS structure.
In step S011, sacrificial layer 102 is formed on the first substrate 101, wherein the material of sacrificial layer 102 includes
SiO2, as shown in Figure 2.
In step S012, mass block 103 is formed on sacrificial layer 102, wherein the material of mass block 103 includes polycrystalline
Silicon, as shown in Figure 2.
In step S013, the first bonding region 104 is formed on mass block 103, wherein the material of the first bonding region 104
Including Al, as shown in Figure 2.
In the present embodiment, the first bonding region 104 is located at the two sides of mass block 103, however the embodiment of the present invention is simultaneously
Without being limited thereto, those skilled in the art can according to need the quantity to the first bonding region 104, position carries out other settings.
In step S014, etched portions mass block 103 forms the first groove 10, and partial sacrificial layer 102 is recessed via first
The exposure of slot 10, as shown in Figure 3.
In the present embodiment, the quantity of the first groove 10 includes two.The depth H of first groove 10 and width L ratio be not small
In 5, it is preferable that the ratio between the depth H of the first groove 10 and width L are 5 to 30, it is highly preferred that selection depth-to-width ratio is in 8 to 12 ranges
It is interior, the protective film for being selectively removed mass block and the first bonding region surface can be better achieved, avoid being located at the first groove 10
The protective film of side wall, positioned at the surface opposite with the first substrate 101 of mass block 103 protective film and be located at the first substrate 101
The protective film on surface is removed.The embodiment of the present invention is not limited to this, and those skilled in the art can according to need recessed to first
Quantity, the depth-to-width ratio of slot 10 carry out other settings.
In step S015, cavity 20 is formed via the first groove 10 removal partial sacrificial layer 102 using the method for corrosion,
Wherein, the first substrate of part 101 is via cavity 20 and the exposure of the first groove 10.Retain 103 two sides of mass block and the first substrate 101
Between at least partly sacrificial layer 102, as shown in Figure 4.
In the present embodiment, for example, by hydrofluoric acid (HF) gas phase fumigate in the way of, corrosion mass block 103 middle part and first
Sacrificial layer 102 between substrate 101, so that intermediate quality block graphics release, and the corresponding part of the first substrate 101 is sudden and violent
Dew.
In step S02, protective film is formed.Specifically, as shown in figure 5, protective film 105 covers the first bonding region 104, matter
The side wall of gauge block 103, the surface of the first substrate 101 and the first groove 10 and sacrificial layer 102.
Wherein, the method for forming protective film 105 includes molecular vapor deposition method (Molecular Vapor
Deposition, MVD), protective film 105 is SAM film, and thickness range includesExtremelyThe material of protective film 105 is selected from
At least one of organosilicon alkanes organic film and organosiloxane class organic film, further, the material of protective film 105 is selected from
FOTS(CF3(CF2)5(CH2)2SiCl3)、OTS(CH3(CH2)17SiCl3)、DDMS(Cl2Si(CH3)2)、MTOS(CH3Si
(OCH3)3)、FOTES(CF3(CF2)5(CH2)2Si(OC2H5)3)、FOMDS(CF3(CF2)5(CH2)2Si(CH3)Cl2)、FOMMS
(CF3(CF2)5(CH2)2Si(CH3)2Cl)、PFDA(C10HF19O2) and DMS (SiO (CH3)2At least one of), some
In preferred embodiment, the material of protective film 105 is FDTS (CF3(CF2)7(CH2)2SiCl3)。
In step S03, part protective film is removed.Specifically, as shown in fig. 6, to wafer by the way of purge of gas
Surface carries out cleaning treatment, removes part protective film 105.The mode of (UV-Ozone) is cleaned to wafer for example, by using UV ozone
Surface carries out cleaning treatment, by the low-pressure quartz mercury lamp 110 and MEMS that generate ultraviolet light at predetermined angular, and irradiates protective film
105 to predetermined time, wherein the range of predetermined angle includes 5 ° to 60 °, is more preferably 40 ° to 50 °, and more preferably 45 °,
Within the scope of this, the effect for being chosen to remove protective film is relatively good；The range of predetermined time includes 10 to 60 minutes, preferably 30 points
Clock；The wavelength for the ultraviolet light that low-pressure quartz mercury lamp 110 generates is selected from least one of 254nm and 185nm, the O in air2?
O atom, O atom and O are generated under the action of ultraviolet radiation of wavelength 185nm2Molecule produces O3；O3In the action of ultraviolet radiation of wavelength 254nm
Under dissociate O atom, O atom is reacted with protective film 105, generates the CO that can issue2、H2The products such as O.Positioned at 10 side of the first groove
The protective film of wall, positioned at the protective film on the surface opposite with the first substrate 101 of mass block 103, positioned at the guarantor of 102 side wall of sacrificial layer
Cuticula and protective film positioned at 101 surface of the first substrate are retained because being blocked by mass block 103, and the protective film of crystal column surface is special
It is not that the protective film on 104 surface of bonding region has completely removed, as shown in Figure 7.
In step S04, MEMS sensor is formed, specifically, the second groove 30 is formed in the second substrate 202, and
The second bonding region 201 is formed on second substrate 202, wherein the position of the second groove 30 is corresponding with the first groove 10, the second bonding
Area 201 is corresponding with the quantity of the first bonding region 104, position, wherein the material of the second bonding region 201 includes Ge, as shown in Figure 8.
In step S05, it is bonded MEMS structure and MEMS sensor, to form the MEMS device of the present embodiment, wherein the
Two grooves 30, the first groove 10 and cavity 20 are connected to, as shown in Figure 8.
In the present embodiment, the mode for being bonded the first bonding region 104 and the second bonding region 201 is selected from eutectic bonding, glass
At least one of powder bonding, anode linkage, in some preferred embodiments, the first bonding region 103 of bonding is bonded with second
The mode in area 201 is Al/Ge eutectic bonding.
The embodiment of the invention also provides MEMS device as shown in Figure 8, including MEMS structure and MEMS sensor.MEMS
Structure include: the first substrate 101, sacrificial layer 102, mass block 103, the first bonding region 104, protective film 105, the first groove 10 with
And cavity 20.
Sacrificial layer 102 is located on the first substrate 101.Cavity 20 is by the removal formation of partial sacrificial layer 102, and via the
One groove 10 exposes the first substrate 101.Mass block 103 is located on sacrificial layer 102.First groove 10 is located in mass block 103, and
It is connected to cavity 20.First bonding region 104 is located on mass block 103.Protective film 105 covers the side wall of the first groove 10, quality
The surface opposite with the first substrate 101 of block 103, the side wall of sacrificial layer 102 and the first substrate 101 surface.Wherein, first is recessed
The ratio between the depth of slot 20 and width are not less than 5, it is preferable that the ratio between the depth of the first groove 10 and width are 5 to 30, more preferably
Ground selects depth-to-width ratio in 8 to 12 ranges.The thickness range of protective film 105 includesExtremelyThe material of protective film 105
Selected from least one of organosilicon alkanes organic film and organosiloxane class organic film.
MEMS sensor includes: the second bonding region 201, the second substrate 202 and the second groove 30.Second groove 30 and
The position of one groove 10 is corresponding, and the second groove 30 is connected to the first groove 10 and cavity 20.The material of first bonding region 104
Material includes Al, and the material of the second bonding region 201 includes Ge.First bonding region 104 and the second bonding region 201 pass through Al/Ge eutectic
Bonding.
The manufacturing method of the MEMS device provided according to the present invention, wherein in the step of removing protective film, be located at quality
The protective film of block side wall, the protective film positioned at the mass block surface opposite with the first substrate and the guarantor positioned at the first substrate surface
Cuticula is retained because being blocked by mass block, and the protective film being located on the first bonding region is removed, and the first of MEMS device is made
Bonding region can be preferably bonded with other structures, to achieve the purpose that improve wafer-level packaging quality.
In addition, the manufacturing method of MEMS device provided by the invention, since mass block can in the step of removing protective film
To block the protective film being retained, it has been optionally removed the protective film of bonding region, has not needed to add mask in this step,
Both cost is saved, production efficiency is also improved.
The present invention, instead of the mask plate of existing scheme, can remove the protective film on bonding region surface by predetermined angle,
Conducive to subsequent processing step, but do not destroy in slot and below suspended matter gauge block bottom protection, achieve the purpose that protection.
There is the problems such as contraposition, template size precision is not high using the method for mask plate in prior art.Meanwhile mask plate
Technique can destroy the MEMS device with movable structure, affect the yield of product.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including element.
For example above according to the embodiment of invention, these embodiments details all there is no detailed descriptionthe does not also limit this
The specific embodiment that invention is only.Obviously, as described above, can make many modifications and variations.This specification is chosen and is had
Body describes these embodiments, is the principle and practical application in order to preferably explain invention, to make technical field technology
Personnel can be used using invention and modification on the basis of invention well.Invention is only by claims and its full scope
With the limitation of equivalent.
Claims (29)
1. a kind of manufacturing method of MEMS device, comprising:
Sacrificial layer is formed on the first substrate；
Mass block is formed on the sacrificial layer；
It etches the mass block and forms the first groove；
Cavity is formed via first groove removal part sacrificial layer；
The first bonding region is formed on the mass block；
Form protective film, the protective film cover first bonding region, the mass block and first substrate surface with
And the side wall of first groove；And
The part protective film is removed,
Wherein, in the step of removing the protective film, positioned at the protective film of the side wall of first groove, positioned at described
The protective film on the mass block surface opposite with first substrate and the protection positioned at first substrate surface
Film is retained due to being blocked by the mass block.
2. the manufacturing method according to claim 1, wherein the protective film also covers the side wall of the sacrificial layer, is going
In the step of except the protective film, the protective film positioned at the side wall of the sacrificial layer is protected due to being blocked by the mass block
It stays.
3. the manufacturing method according to claim 1, wherein the step of removing the protective film include:
Ultraviolet light is generated using low-pressure quartz mercury lamp；And
The protective film is irradiated to the predetermined time using the ultraviolet light,
Wherein, the ultraviolet light and the MEMS device are in predetermined angle.
4. manufacturing method according to claim 3, wherein the method for removing the protective film includes that ultraviolet-ozone is clear
It washes.
5. manufacturing method according to claim 3, wherein the range of the predetermined angle includes 5 ° to 60 °.
6. manufacturing method according to claim 3, wherein the predetermined angle includes 40 ° to 50 °.
7. manufacturing method according to claim 3, wherein the predetermined time ranges includes 10 to 60 minutes.
8. manufacturing method according to claim 3, wherein the wavelength of the ultraviolet light in 254nm and 185nm extremely
Few one kind.
9. the manufacturing method according to claim 1, wherein the ratio between the depth of first groove and width are not less than 5.
10. manufacturing method according to claim 9, wherein the depth of first groove and the range packet of the ratio between width
Include 5 to 30.
11. the manufacturing method according to claim 1, wherein the material of the protective film is selected from organosilicon alkanes organic film
At least one of with organosiloxane class organic film.
12. the manufacturing method according to claim 1, wherein the material of the protective film is selected from FOTS (CF3(CF2)5
(CH2)2SiCl3)、OTS(CH3(CH2)17SiCl3)、DDMS(Cl2Si(CH3)2)、MTOS(CH3Si(OCH3)3)、FOTES(CF3
(CF2)5(CH2)2Si(OC2H5)3)、FOMDS(CF3(CF2)5(CH2)2Si(CH3)Cl2)、FOMMS(CF3(CF2)5(CH2)2Si
(CH3)2Cl)、PFDA(C10HF19O2)、DMS(SiO(CH3)2) and FDTS (CF3(CF2)7(CH2)2SiCl3) at least one
Kind.
13. the manufacturing method according to claim 1, wherein the thickness range of the protective film includesExtremely
14. -13 any manufacturing method according to claim 1, further includes:
MEMS sensor is formed, the MEMS sensor includes the second bonding region；And
It is bonded first bonding region and second bonding region.
15. manufacturing method according to claim 14, wherein the step of forming the MEMS sensor is included in the second lining
The second groove is formed on bottom, second groove is corresponding with first groove location.
16. the manufacturing method according to claim 15, wherein first groove and second groove and the sky
Chamber connection.
17. manufacturing method according to claim 14, wherein bonding first bonding region and second bonding region
Mode is selected from least one of eutectic bonding, glass powder bonding, anode linkage.
18. manufacturing method according to claim 14, wherein the material of first bonding region includes Al,
The material of second bonding region includes Ge.
19. manufacturing method according to claim 18, wherein bonding first bonding region and second bonding region
Mode includes Al/Ge eutectic bonding.
20. a kind of MEMS device, comprising:
First substrate；
Sacrificial layer is located on first substrate；
Mass block is located on the sacrificial layer；
First groove is located in the mass block；
Cavity, via the surface of first groove exposure, first substrate；
First bonding region is located on the mass block；And
Protective film covers side wall, the mass block surface opposite with first substrate of first groove and described
The surface of first substrate.
21. MEMS device according to claim 20, wherein the protective film also covers the side wall of the sacrificial layer.
22. MEMS device according to claim 20, wherein the ratio between the depth of first groove and width are not less than 5.
23. MEMS device according to claim 22, wherein the depth of first groove and the range packet of the ratio between width
Include 5 to 30.
24. MEMS device according to claim 20, wherein the material of the protective film is selected from organosilicon alkanes organic film
At least one of with organosiloxane class organic film.
25. MEMS device according to claim 20, wherein the thickness range of the protective film includesExtremely
26. it further include MEMS sensor according to any MEMS device of claim 20-25, the MEMS sensor packet
The second bonding region is included,
First bonding region is bonded with second bonding region.
27. MEMS device according to claim 26, wherein the MEMS sensor further includes being located on the second substrate
Second groove, second groove are corresponding with the position of first groove.
28. MEMS device according to claim 27, wherein second groove is connected to first groove.
29. MEMS device according to claim 28, wherein the material of first bonding region includes Al, and described second
The material of bonding region includes Ge.
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