CN210133880U - MEMS device - Google Patents
MEMS device Download PDFInfo
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- CN210133880U CN210133880U CN201822216605.0U CN201822216605U CN210133880U CN 210133880 U CN210133880 U CN 210133880U CN 201822216605 U CN201822216605 U CN 201822216605U CN 210133880 U CN210133880 U CN 210133880U
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Abstract
The application discloses a MEMS device. The MEMS device includes: a first substrate; a sacrificial layer on the first substrate; the mass block is positioned on the sacrificial layer; the first groove is positioned in the mass block; a cavity exposing a surface of the first substrate via the first groove; a first bonding region located on the mass block; and a protective film covering the side wall of the first groove, the surface of the mass block opposite to the first substrate, and the surface of the first substrate. The MEMS device reduces the friction coefficient of the MEMS device through the protective film positioned on the side wall of the first groove, the protective film positioned on the surface of the mass block opposite to the first substrate and the protective film positioned on the surface of the first substrate, and the first bonding area is not provided with the protective film, so that the first bonding area of the MEMS device can be better bonded with other structures, and the purpose of improving the wafer-level packaging quality is achieved.
Description
Technical Field
The utility model relates to a semiconductor device field, more specifically relates to a MEMS device.
Background
The single or multi-molecular-layer ultrathin film prepared on the surface of a Micro-Electro-Mechanical System (MEMS) material can obviously reduce the friction coefficient of the surface of the MEMS material even in an ultra-smooth state without reducing the bearing capacity of the MEMS material, and is an effective means for solving the lubrication problem of the MEMS System.
The molecular film for the lubrication of the MEMS surface is mainly a (langmuir-Blodgett, LB) film, a self-assembled monolayer (SAM) film, and the like. The LB film technology is utilized to assemble single molecules on the surface of a material, a molecular ordered system can be formed, the LB film has the advantages of stable performance, low friction coefficient, controllable thickness and the like, and is used for the lubrication problem of a magnetic recording system at present. The SAM film is a new organic ultrathin film that has been developed in recent years. The SAM film has stable structure and compact accumulation, has the functions of corrosion prevention, friction reduction, abrasion reduction and the like, and has great development potential in solving the lubrication problem of the MEMS system.
However, in some MEMS sensors, a Wafer (Wafer) level packaging process is required, and depositing the SAM film material on the surface of the Wafer will seriously affect the Wafer level packaging, resulting in significant degradation of packaging quality, occurrence of voids, air leakage, and the like.
SUMMERY OF THE UTILITY MODEL
According to the utility model provides a pair of MEMS device, include: a first substrate; the sacrificial layer is positioned on the first substrate; the mass block is positioned on the sacrificial layer; a first recess in the mass; a cavity exposing a surface of the first substrate via the first groove; a first bonding region located on the mass; and a protective film covering the side wall of the first groove, the surface of the mass block opposite to the first substrate, and the surface of the first substrate.
Preferably, the protective film further covers a sidewall of the sacrificial layer.
Preferably, the ratio of the depth to the width of the first groove is not less than 5.
Preferably, the range of the depth to width ratio of the first groove includes 5 to 30.
Preferably, the material of the protective film is selected from at least one of an organic film of an organosilane type and an organic film of an organosiloxane type.
Preferably, the thickness range of the protective film includes
To
Preferably, the MEMS sensor comprises a second bonding area, and the first bonding area is bonded with the second bonding area.
Preferably, the MEMS sensor further comprises a second groove on a second substrate, the second groove corresponding to the first groove in position.
Preferably, the first groove communicates with the cavity and the second groove.
Preferably, the material of the first bonding region includes Al, and the material of the second bonding region includes Ge.
According to the utility model provides a MEMS device, through the protection film that is located the lateral wall of first recess, is located the protection film on the surface that the quality piece is relative with first substrate and the protection film that is located first substrate surface has reduced MEMS device coefficient of friction, and does not have the protection film on the first bonding district, makes the first bonding district of MEMS device can bond with other structures better to the purpose that improves wafer level encapsulation quality has been reached.
Drawings
To more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below, and it is apparent that the drawings in the following description only relate to some embodiments of the present disclosure and do not limit the present disclosure.
Fig. 1a shows a schematic diagram of a manufacturing method of a MEMS device according to an embodiment of the present invention.
Fig. 1b shows a schematic diagram of a method for manufacturing a MEMS structure of a MEMS device according to an embodiment of the present invention.
Fig. 2 to 8 show schematic cross-sectional views of a part of stages in a method of manufacturing a MEMS device according to an embodiment of the invention.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. Moreover, certain well-known elements may not be shown in the figures.
In the following description, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of components, are set forth in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the invention may be practiced without these specific details.
It will be understood that when a layer, region or layer is referred to as being "on" or "over" another layer, region or layer in describing the structure of the component, it can be directly on the other layer, region or layer or intervening layers or regions may also be present. Also, if the component is turned over, one layer or region may be "under" or "beneath" another layer or region.
Fig. 1a shows a schematic diagram of a manufacturing method of a MEMS device according to an embodiment of the present invention. In the following description, a method for manufacturing a MEMS device according to an embodiment of the present invention will be described in detail with reference to fig. 2 to 8.
In step S01, a MEMS structure is formed. As shown in fig. 1b, a MEMS structure may be formed by the following steps S011 to S015.
In step S011, a sacrificial layer 102 is formed on a first substrate 101, wherein a material of the sacrificial layer 102 includes SiO2As shown in fig. 2.
In step S012, a mass block 103 is formed on the sacrificial layer 102, wherein a material of the mass block 103 includes polysilicon, as shown in fig. 2.
In step S013, a first bonding region 104 is formed on the mass 103, wherein a material of the first bonding region 104 includes Al, as shown in fig. 2.
In the present embodiment, the first bonding regions 104 are respectively located at two sides of the mass block 103, however, the embodiments of the present invention are not limited thereto, and those skilled in the art may make other arrangements on the number and positions of the first bonding regions 104 as needed.
In step S014, a portion of the proof mass 103 is etched to form a first groove 10, and a portion of the sacrificial layer 102 is exposed through the first groove 10, as shown in fig. 3.
In the present embodiment, the number of the first grooves 10 includes two. The ratio of the depth H to the width L of the first groove 10 is not less than 5, preferably the ratio of the depth H to the width L of the first groove 10 is 5 to 30, and more preferably the aspect ratio is selected to be in the range of 8 to 12, which can better achieve the selective removal of the protective film on the surface of the proof mass and the first bonding region, and the removal of the protective film on the sidewall of the first groove 10, the protective film on the surface of the proof mass 103 opposite to the first substrate 101, and the protective film on the surface of the first substrate 101. The embodiment of the present invention is not limited thereto, and those skilled in the art may perform other settings on the number and the depth-to-width ratio of the first groove 10 as needed.
In step S015, a cavity 20 is formed by removing a portion of the sacrificial layer 102 through the first groove 10 by etching, wherein a portion of the first substrate 101 is exposed through the cavity 20 and the first groove 10. At least part of the sacrificial layer 102 between both sides of the proof mass 103 and the first substrate 101 remains, as shown in fig. 4.
In the present embodiment, the sacrificial layer 102 between the middle portion of the proof mass 103 and the first substrate 101 is etched, for example, by vapor fumigation with hydrofluoric acid (HF), so that the middle proof mass pattern is released and the corresponding portion of the first substrate 101 is exposed.
In step S02, a protective film is formed. Specifically, as shown in fig. 5, the protective film 105 covers the first bonding region 104, the mass block 103, the surface of the first substrate 101, and the sidewalls of the first recess 10 and the sacrificial layer 102.
The method for forming the protective film 105 includes a Molecular Vapor Deposition (MVD), and the protective film 105 is a SAM film having a thickness in a range including
To
The material of the protective film 105 is selected from at least one of an organic film of an organosilane and an organic film of an organosiloxane, and the material of the protective film 105 is selected from FOTS (CF)3(CF2)5(CH2)2SiCl3)、OTS(CH3(CH2)17SiCl3)、DDMS(Cl2Si(CH3)2)、MTOS(CH3Si(OCH3)3)、FOTES(CF3(CF2)5(CH2)2Si(OC2H5)3)、FOMDS(CF3(CF2)5(CH2)2Si(CH3)Cl2)、FOMMS(CF3(CF2)5(CH2)2Si(CH3)2Cl)、PFDA(C10HF19O2) And DMS (SiO (CH)3)2) In some preferred embodiments, the material of the protective film 105 is FDTS (CF)3(CF2)7(CH2)2SiCl3)。
In step S03, a part of the protective film is removed. Specifically, as shown in fig. 6, a cleaning process is performed on the wafer surface by using a gas cleaning method to remove a portion of the protective film 105. Cleaning the wafer surface by using an ultraviolet Ozone cleaning (UV-Ozone) method, making a low-pressure quartz mercury lamp 110 generating ultraviolet rays and the MEMS at a predetermined angle, and irradiating the protective film 105 for a predetermined time, wherein the predetermined angle is in a range from 5 ° to 60 °, preferably from 40 ° to 50 °, more preferably 45 °, and the protective film is preferably selectively removed within the range; the predetermined time range includes 10 to 60 minutes, preferably 30 minutes; the wavelength of the ultraviolet light generated by the low-pressure quartz mercury lamp 110 is at least one selected from 254nm and 185nm, O in air2Generating O atoms, O atoms and O atoms under the action of ultraviolet rays with the wavelength of 185nm2Molecular production of O3；O3O atoms are dissociated by ultraviolet rays having a wavelength of 254nm, and the O atoms react with the protective film 105 to generate CO to be emitted2、H2O, and the like. The protective film on the side wall of the first groove 10, the protective film on the surface of the mass block 103 opposite to the first substrate 101, the protective film on the side wall of the sacrificial layer 102 and the protective film on the surface of the first substrate 101 are remained because of being shielded by the mass block 103, and the protective film on the surface of the wafer, particularly the protective film on the surface of the bonding region 104, has been completely removed, as shown in fig. 7.
In step S04, a MEMS sensor is formed, specifically, a second groove 30 is formed in the second substrate 202, and a second bonding region 201 is formed on the second substrate 202, wherein the position of the second groove 30 corresponds to the first groove 10, the second bonding region 201 corresponds to the number and position of the bonding first bonding regions 104, and the material of the second bonding region 201 includes Ge, as shown in fig. 8.
In step S05, the MEMS structure and the MEMS sensor are bonded to form the MEMS device of the present embodiment, wherein the second recess 30, the first recess 10 and the cavity 20 are communicated, as shown in fig. 8.
In the present embodiment, the first bonding region 104 and the second bonding region 201 are bonded by at least one selected from eutectic bonding, glass frit bonding, and anodic bonding, and in some preferred embodiments, the first bonding region 103 and the second bonding region 201 are bonded by Al/Ge eutectic bonding.
The embodiment of the utility model provides a MEMS device as shown in FIG. 8 is still provided, including MEMS structure and MEMS sensor. The MEMS structure includes: a first substrate 101, a sacrificial layer 102, a mass block 103, a first bonding region 104, a protective film 105, a first recess 10, and a cavity 20.
A sacrificial layer 102 is located on the first substrate 101. The cavity 20 is formed by removing a portion of the sacrificial layer 102 and exposes the first substrate 101 via the first recess 10. The mass 103 is located on the sacrificial layer 102. The first recess 10 is located in the mass 103 and communicates with the cavity 20. The first bonding region 104 is located on the mass 103. The protective film 105 covers the side wall of the first groove 10, the surface of the mass block 103 opposite to the first substrate 101, the side wall of the sacrificial layer 102, and the surface of the first substrate 101. Wherein the ratio of the depth to the width of the first groove 20 is not less than 5, preferably the ratio of the depth to the width of the first groove 10 is 5 to 30, more preferably the aspect ratio is selected in the range of 8 to 12. The thickness range of the protective film 105 includes
To
The material of the protective film 105 is at least one selected from an organic silane film and an organic siloxane film.
The MEMS sensor includes: a second bonding region 201, a second substrate 202, and a second recess 30. The second groove 30 corresponds to the position of the first groove 10, and the second groove 30 communicates with the first groove 10 and the cavity 20. The material of the first bonding region 104 includes Al and the material of the second bonding region 201 includes Ge. The first bonding region 104 and the second bonding region 201 are eutectic bonded by Al/Ge.
According to the utility model provides a manufacturing approach of MEMS device, wherein, in the step of getting rid of the protection film, the protection film that is located the quality piece lateral wall, the protection film that is located the quality piece and the relative surface of first substrate and the protection film that is located the first substrate surface are because of being sheltered from by the quality piece and are remain, and the protection film that is located on first bonding zone is clear away, makes the first bonding zone of MEMS device can bond with other structures better to the purpose that has reached improvement wafer level encapsulation quality.
Furthermore, the utility model provides a manufacturing approach of MEMS device is because the quality piece can shelter from by the protection film that remains in the step of getting rid of the protection film, has selectively got rid of the protection film of bonding region, need not add the shade in this step, has both saved the cost, has still improved production efficiency.
The utility model discloses a predetermine the mask version that the angle has replaced current scheme, can remove the protection film on bonding zone surface, do benefit to subsequent process step, do not destroy the protection of bottom below the inslot and the suspension quality piece again, reach the purpose of protection.
The method of using the mask in the prior art has the problems of low alignment, low size precision of the template and the like. Meanwhile, the mask process can damage the MEMS device with the movable structure, and the yield of products is influenced.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
In accordance with the invention, as set forth above, these embodiments do not set forth all of the details nor limit the invention to the specific embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and its practical application, to thereby enable others skilled in the art to best utilize the invention and its practical application with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.
Claims (8)
1. A MEMS device, comprising:
a first substrate;
the sacrificial layer is positioned on the first substrate;
the mass block is positioned on the sacrificial layer;
a first recess in the mass;
a cavity exposing a surface of the first substrate via the first groove;
a first bonding region located on the mass; and
and the protective film covers the side wall of the first groove, the surface of the mass block, which is opposite to the first substrate, and the surface of the first substrate.
2. The MEMS device, as recited in claim 1, wherein the protective film further covers sidewalls of the sacrificial layer.
3. The MEMS device, as recited in claim 1, wherein a ratio of a depth to a width of the first recess is not less than 5.
4. The MEMS device, as recited in claim 3, wherein the first recess has a depth to width ratio in a range including 5 to 30.
5. The method of claim 1MEMS device, characterized in that the thickness range of the protective film comprises
To
6. The MEMS device of any of claims 1-5, further comprising a MEMS sensor, the MEMS sensor comprising a second bonding region,
the first bonding region is bonded to the second bonding region.
7. The MEMS device, as recited in claim 6, further comprising a second recess on a second substrate, the second recess corresponding in position to the first recess.
8. The MEMS device, as recited in claim 7, wherein the second recess is in communication with the first recess.
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| CN201822216605.0U CN210133880U (en) | 2018-12-27 | 2018-12-27 | MEMS device |
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| CN201822216605.0U CN210133880U (en) | 2018-12-27 | 2018-12-27 | MEMS device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109650326A (en) * | 2018-12-27 | 2019-04-19 | 杭州士兰集成电路有限公司 | MEMS device and its manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109650326A (en) * | 2018-12-27 | 2019-04-19 | 杭州士兰集成电路有限公司 | MEMS device and its manufacturing method |
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