CN109650323B - Solder isolation structure and electronic device - Google Patents
Solder isolation structure and electronic device Download PDFInfo
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- CN109650323B CN109650323B CN201811583773.1A CN201811583773A CN109650323B CN 109650323 B CN109650323 B CN 109650323B CN 201811583773 A CN201811583773 A CN 201811583773A CN 109650323 B CN109650323 B CN 109650323B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
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Abstract
The invention discloses a solder isolation structure and an electronic device, wherein the solder isolation structure comprises a middle continuous gold-plating ring area, an intermittent inner gold-plating ring area and an intermittent outer gold-plating ring area which are positioned on the upper surface of a welding carrier, the middle continuous gold-plating ring area is a welding ring, the intermittent inner gold-plating ring area is not intersected with the middle continuous gold-plating ring area and is positioned on the inner side of the middle continuous gold-plating ring area, the intermittent outer gold-plating ring area is not intersected with the middle continuous gold-plating ring area and is positioned on the outer side of the middle continuous gold-plating ring area, the intermittent inner gold-plating ring area and the intermittent outer gold-plating ring area comprise a plurality of non-intersected independent gold-plating areas, and solder is adsorbed between the adjacent gold-plating areas through a capillary effect and is prevented from passing through. The inner side and the outer side of the middle continuous gold-plating ring area on the upper surface of the welding carrier are provided with the intermittent inner gold-plating ring area and the intermittent outer gold-plating ring area, so that the solder is adsorbed by the capillary effect and prevented from passing through, the isolation and the limitation of the solder are realized, and the yield of products is improved.
Description
Technical Field
The invention relates to the technical field of wafer-level packaging, in particular to a solder isolation structure and an electronic device.
Background
As various semiconductor MEMS device wafer-level vacuum packaging has the characteristics of simple packaging structure, small volume, low cost, long vacuum service life and the like compared with the traditional metal packaging and ceramic packaging, the packaging form of the MEMS industry starts to be changed to the wafer-level packaging, and the most key technology of the wafer-level packaging is wafer-level bonding. Generally, the classic structure of wafer level bonding is to align the chip wafer and the window wafer in height, complete the soldering through the solder and the metal plating layer plated on the chip and the window in advance, and then cut the bonded wafer into single detector products.
Correspondingly, the wafer-level bonding technology and the process with high efficiency and low cost are powerful ways for reducing the production cost of semiconductor devices, improving the yield of products and further improving the competitiveness of the products.
The encapsulation sealing area of the wafer level encapsulation is generally formed by welding alloy solder and a gold plating area, the solder is well infiltrated in the gold plating area, and meanwhile, due to the fact that the fluidity of the solder is too good, the solder can seriously overflow, and even the detector can be seriously scrapped, so that the unit cost of the detector is improved, and the product competitiveness is not favorably improved.
Disclosure of Invention
The invention aims to provide a solder isolation structure and an electronic device, which effectively solve the problem of serious solder overflow in the wafer-level packaging process, control the solder in an expected range and effectively improve the yield and the product performance of the wafer-level packaging.
In order to solve the above technical problem, an embodiment of the present invention provides a solder isolation structure, including an intermediate continuous gold-plating ring region, an intermittent inner gold-plating ring region, and an intermittent outer gold-plating ring region, which are located on an upper surface of a solder carrier, where the intermediate continuous gold-plating ring region is a solder ring, the intermittent inner gold-plating ring region does not intersect with the intermediate continuous gold-plating ring region and is located inside the intermediate continuous gold-plating ring region, the intermittent outer gold-plating ring region does not intersect with the intermediate continuous gold-plating ring region and is located outside the intermediate continuous gold-plating ring region, the intermittent inner gold-plating ring region and the intermittent outer gold-plating ring region include a plurality of non-intersecting independent gold-plating regions, and solder is adsorbed between adjacent gold-plating regions by a capillary effect and is prevented from passing through the solder regions.
Wherein the independent gold plating area is circular, oval or rectangular in shape.
Wherein, the discontinuous inner gold-plating ring area and the discontinuous outer gold-plating ring area are single-layer discontinuous gold-plating ring areas or double-layer discontinuous gold-plating ring areas.
Wherein the ratio of the sum of the areas of the plurality of independent gold-plated regions in the interrupted inner gold-plated ring region to the area of the interrupted inner gold-plated ring region is 70% or more, and/or the ratio of the sum of the areas of the plurality of independent gold-plated regions in the interrupted outer gold-plated ring region to the area of the interrupted outer gold-plated ring region is 70% or more.
And the distance between every two adjacent independent gold-plated areas is 1/10-1/5 of the length of each independent gold-plated area.
Wherein a plurality of said individual gold-plated regions in said interrupted inner gold-plated ring region and said interrupted outer gold-plated ring region are identical in shape.
Wherein the distances between the plurality of independent gold-plated regions in the intermittent inner gold-plated ring region and the plurality of independent gold-plated regions in the intermittent outer gold-plated ring region and the middle continuous gold-plated ring region are equal except for the vertex angle.
Wherein, an inner etching area is arranged between the middle continuous gold-plating ring area and the interrupted inner gold-plating ring area, and/or an outer etching area is arranged between the middle continuous gold-plating ring area and the interrupted outer gold-plating ring area.
In addition, the embodiment of the invention also provides an electronic device, which comprises a chip wafer, a window wafer and the solder isolation structure, wherein the solder isolation structure is arranged on the chip wafer or the window of the window wafer, and the chip wafer is bonded with the window wafer.
Compared with the prior art, the solder isolation structure and the electronic device provided by the embodiment of the invention have the following advantages:
the solder isolation structure and the electronic device are characterized in that the inner side and the outer side of the middle continuous gold-plating ring area on the upper surface of the welding carrier are provided with the intermittent inner gold-plating ring area and the intermittent outer gold-plating ring area, so that the solder is adsorbed by a capillary effect and prevented from passing through, the solder flows to the welding ring which is easy to flow, the isolation and the limitation of the solder are realized, and the yield of products is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an embodiment of a solder isolation structure according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another specific implementation of a solder isolation structure according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 to 2, fig. 1 is a schematic structural diagram of an embodiment of a solder isolation structure according to the present invention; fig. 2 is a schematic structural diagram of another specific implementation of a solder isolation structure according to an embodiment of the present invention.
In a specific embodiment, the solder isolation structure comprises an intermediate continuous gold-plated ring region 10, an intermittent inner gold-plated ring region 20 and an intermittent outer gold-plated ring region 30, which are located on the upper surface of the solder carrier, wherein the intermediate continuous gold-plated ring region 10 is a solder ring, the intermittent inner gold-plated ring region 20 does not intersect with the intermediate continuous gold-plated ring region 10 and is located on the inner side of the intermediate continuous gold-plated ring region 10, the intermittent outer gold-plated ring region does not intersect with the intermediate continuous gold-plated ring region 10 and is located on the outer side of the intermediate continuous gold-plated ring region 10, the intermittent inner gold-plated ring region 20 and the intermittent outer gold-plated ring region 30 comprise a plurality of non-intersecting independent gold-plated regions 40, and solder is adsorbed and prevented from passing through between adjacent gold-plated regions through a capillary effect.
The intermittent inner gold-plating ring area 20 and the intermittent outer gold-plating ring area 30 are arranged on the inner side and the outer side of the middle continuous gold-plating ring area 10 on the upper surface of the welding carrier, so that the solder is adsorbed by the capillary effect and prevented from passing through, the solder flows to the welding ring which is easy to flow, the isolation and the limitation of the solder are realized, and the yield of products is improved.
In the solder isolation structure, because the inner side and the outer side of the intermittent inner gold-plated ring area 20 and the intermittent outer gold-plated ring area 30 which are taken as the welding rings are arranged and do not intersect, the welding area is a gold-plated area which is uniformly soaked by solder and can freely flow, and the solder flows to the welding area which is easy to flow due to poor fluidity of the solder between the intermittent inner gold-plated ring area 20 and the intermittent outer gold-plated ring area 30, so that the solder is prevented from passing through the intermittent inner gold-plated ring area 20 and the intermittent outer gold-plated ring area 30, the isolation and the limitation of the solder are realized, and the yield of products is improved.
The solder isolation structure can be arranged on any one of the window wafer and the chip wafer, namely, the welding carrier can be arranged on the window wafer or the chip wafer, and the welding carrier can be correspondingly arranged as required by the technical personnel in the field.
In one embodiment, solder is pre-formed on the chip wafer, the window wafer is metallized to form a gold-plated region, a solder isolation structure is designed on the window, an annular non-gold-plated structure is formed on the window, the solder ring is separated from the interrupted inner gold-plated ring region 20 and the interrupted outer gold-plated ring region 30, and the interrupted independent gold-plated region 40 is formed on the interrupted inner gold-plated ring region 20 and the interrupted outer gold-plated ring region 30 by etching process or other methods. The welding ring is an actual expected welding area, the solder is uniformly infiltrated in the welding area in the welding process, the solder has poor flowability in the annular non-gold-plated structure, most of the solder is intercepted in the middle welding area, and if a very small amount of solder crosses the non-gold-plated area and enters the intermittent inner gold-plated ring area 20 and the intermittent outer gold-plated ring area 30, the solder can infiltrate and flow along the annular gold-plated area, so that the serious overflow condition can not occur.
The width, length, adjacent spacing and the like of the independent gold-plated area 40 are not limited, the shape of the independent gold-plated area 40 can be circular, rectangular, square, oval or other shapes as long as the solder can be ensured to be adsorbed on a welding area due to capillary phenomenon, namely, the shape of the independent gold-plated area 40 is circular, oval or rectangular.
In the present invention, a plurality of independent gold-plating regions 40 are provided in the interrupted inner gold-plating ring region 20 and the interrupted outer gold-plating ring region 30, and the solder is adsorbed and blocked by the capillary effect between the adjacent independent gold-plating regions 40, in the present invention, the number of layers of the independent gold-plating regions 40 in the interrupted inner gold-plating ring region 20 and the interrupted outer gold-plating ring region 30, that is, the number of layers of the independent gold-plating regions 40 in the interrupted inner gold-plating ring region 20 and the interrupted outer gold-plating ring region 30, in the direction from the middle continuous gold-plating region to the interrupted inner gold-plating ring region 20 and the interrupted outer gold-plating ring region 30, may be a single layer, or may be a multilayer to improve the adsorption efficiency, that is, two or three layers are used, that is, the interrupted inner gold-plating ring region 20 and the interrupted outer gold-plating ring region 30 may be a single-layer non-plating.
The invention does not limit the distance between two layers of the gold plating rings in the double-layer discontinuous gold plating ring area, and the gaps between each layer in the two layers of the discontinuous gold plating ring area can be aligned or not, but generally, in order to further ensure the isolation effect, the gaps between the two layers are staggered, thereby improving the capillary effect and the isolation effect on the solder.
In order to ensure sufficient isolation between the intermittent inner gold-plated ring region 20 and the intermittent outer gold-plated ring region 30 and thus sufficient capillary attraction between the individual gold-plated ring regions 40, the ratio of the total area of the individual gold-plated regions 40 in the intermittent inner gold-plated ring region 20 to the area of the intermittent inner gold-plated ring region 20 is generally 70% or more, and/or the ratio of the total area of the individual gold-plated regions 40 in the intermittent outer gold-plated ring region 30 to the area of the intermittent outer gold-plated ring region 30 is 70% or more.
The length, the width, the adjacent spacing and the like of the independent gold-plated area 40 are not particularly limited, and the spacing between the adjacent independent gold-plated areas 40 is 1/10-1/5 of the length of the independent gold-plated area 40 on the premise of ensuring sufficient capillary adsorption effect.
The working personnel can design the layout very simply according to certain parameters, the processing difficulty of the independent gold plating area 40 is reduced, the cost is reduced, and the manufacturing quality of the solder isolation structure is improved.
Preferably, the shapes of the plurality of independent gold-plated regions 40 in the intermittent inner gold-plated ring region 20 and the intermittent outer gold-plated ring region 30 are the same.
Further, the sizes of the individual gold-plated regions 40 in the intermittent inner gold-plated ring region 20 and the intermittent outer gold-plated ring region 30 are equal.
In order to further reduce the process difficulty and make the blocking capability of the different regions to the solder equal or similar as much as possible, in one embodiment of the present invention, the distances between the plurality of independent gold-plated regions 40 in the interrupted inner gold-plated ring region 20, the plurality of independent gold-plated regions 40 in the interrupted outer gold-plated ring region 30 and the middle continuous gold-plated ring region 10 are equal except the top corner.
In another embodiment of the present invention, the solder is prefabricated on the window of the window wafer, the solder ring is formed between the non-gold-plated regions, if the solder overflows the non-gold-plated regions and reaches the discontinuous outer gold-plated ring region 30 or the discontinuous inner gold-plated ring region 20, the solder is adsorbed on the discontinuous inner gold-plated ring region 20 and the independent gold-plated region 40 of the discontinuous outer gold-plated ring region 30 due to capillary phenomenon, so as to ensure that the solder flows within a set range, as shown in fig. 1, which is a single-layer discontinuous gold-plated ring region structure, and fig. 2, which is a double-layer discontinuous gold-plated ring region structure.
To further reduce solder flow between the intermediate continuous gold-plated ring region 10 and the interrupted inner gold-plated ring region 20 and the interrupted outer gold-plated ring region 30, in one embodiment of the present invention, an inner etched region is located between the intermediate continuous gold-plated ring region 10 and the interrupted inner gold-plated ring region 20, and/or an outer etched region is located between the intermediate continuous gold-plated ring region 10 and the interrupted outer gold-plated ring region 30.
An inner etching area or an outer etching area and an inner etching area are formed through etching, so that the wettability of the solder at the position is reduced, the solder can flow to the welding ring as much as possible, and the welding efficiency is improved. It should be noted that the forming method of the inner etching area or the outer and inner etching areas is not specifically limited, and the inner etching area or the outer and inner etching areas can be formed by dry etching or wet etching, and generally the inner etching area or the outer and inner etching areas are formed by dry etching in order to ensure the beautiful structure and to etch only a designated area.
In addition, the embodiment of the invention also provides an electronic device, which comprises a chip wafer, a window wafer and the solder isolation structure, wherein the solder isolation structure is arranged on the chip wafer or the window of the window wafer, and the chip wafer is bonded with the window wafer.
Since the electronic device includes the solder barrier structure as described above, it should have the same advantageous effects, and the present invention is not described herein again.
The electronic device is not particularly limited in the present invention, and may be a probe or other MEMS device.
In summary, in the solder isolation structure and the electronic device provided by the embodiments of the present invention, the inner side and the outer side of the middle continuous gold-plating ring region on the upper surface of the solder carrier are provided with the intermittent inner gold-plating ring region and the intermittent outer gold-plating ring region, so that the solder is adsorbed by the capillary effect and prevented from passing through, and the solder flows to the solder ring easy to flow, thereby realizing isolation and limitation of the solder and improving the yield of the product.
The solder barrier structure and the electronic device provided by the present invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (9)
1. A solder isolation structure is characterized by comprising an intermediate continuous gold-plating ring area, an intermittent inner gold-plating ring area and an intermittent outer gold-plating ring area, wherein the intermediate continuous gold-plating ring area is a welding ring and does not intersect with the intermediate continuous gold-plating ring area and is positioned on the inner side of the intermediate continuous gold-plating ring area, the intermittent outer gold-plating ring area does not intersect with the intermediate continuous gold-plating ring area and is positioned on the outer side of the intermediate continuous gold-plating ring area, the intermittent inner gold-plating ring area and the intermittent outer gold-plating ring area comprise a plurality of independent gold-plating areas, and solder is adsorbed between the adjacent independent gold-plating areas through the capillary effect and is prevented from passing through the independent gold-plating areas.
2. The solder barrier structure of claim 1, wherein the free-standing gold plated areas are circular, oval or rectangular in shape.
3. The solder isolation structure of claim 2, wherein the discontinuous inner gold-plated ring region, the discontinuous outer gold-plated ring region is a single-layer discontinuous gold-plated ring region or a double-layer discontinuous gold-plated ring region.
4. The solder isolation structure of claim 3, wherein a ratio of a sum of areas of a plurality of said individual gold-plated regions in said interrupted inner gold-plated ring region to an area of said interrupted inner gold-plated ring region is 70% or more, and/or a ratio of a sum of areas of a plurality of said individual gold-plated regions in said interrupted outer gold-plated ring region to an area of said interrupted outer gold-plated ring region is 70% or more.
5. The solder isolation structure of claim 4, wherein the spacing between adjacent individual gold-plated regions is 1/10-1/5 of the length of the individual gold-plated regions.
6. The solder isolation structure of claim 5, wherein a plurality of said individual gold-plated regions in said interrupted inner gold-plated ring region and said interrupted outer gold-plated ring region are identical in shape.
7. The solder isolation structure of claim 6, wherein a plurality of said individual gold-plated regions in said interrupted inner gold-plated ring region, a plurality of said individual gold-plated regions in said interrupted outer gold-plated ring region, and said intermediate continuous gold-plated ring region are equally spaced apart except at a top corner.
8. The solder isolation structure of claim 7, wherein an inner etched region is between the middle continuous gold-plated ring region and the interrupted inner gold-plated ring region, and/or an outer etched region is between the middle continuous gold-plated ring region and the interrupted outer gold-plated ring region.
9. An electronic device comprising a chip wafer, a window wafer, and the solder barrier structure of any of claims 1-8, wherein the solder barrier structure is disposed on the chip wafer or the window of the window wafer, and wherein the chip wafer is bonded to the window wafer.
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| CN201811583773.1A CN109650323B (en) | 2018-12-24 | 2018-12-24 | Solder isolation structure and electronic device |
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| CN201811583773.1A CN109650323B (en) | 2018-12-24 | 2018-12-24 | Solder isolation structure and electronic device |
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| CN109650323B true CN109650323B (en) | 2020-11-03 |
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| CN1232437C (en) * | 2003-08-06 | 2005-12-21 | 中国科学院上海微系统与信息技术研究所 | Method of air tight packaging micro computer electric system device using capillary tube method |
| JP4651359B2 (en) * | 2004-10-29 | 2011-03-16 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
| CN101295695A (en) * | 2007-04-29 | 2008-10-29 | 飞思卡尔半导体（中国）有限公司 | Lead frame with welding flux flow control |
| US7883937B1 (en) * | 2007-04-30 | 2011-02-08 | Altera Corporation | Electronic package and method of forming the same |
| CN106504998B (en) * | 2016-10-25 | 2018-12-21 | 中国电子科技集团公司第三十八研究所 | The production method and product of metal solder mask for the assembling of high density microwave circuit |
| CN107634044A (en) * | 2017-09-15 | 2018-01-26 | 成都睿腾万通科技有限公司 | A kind of high-power SIP gold tin welding encapsulating structure and method for packing |
| CN108493121B (en) * | 2018-03-22 | 2019-09-20 | 上海飞骧电子科技有限公司 | A kind of support plate production and packaging method solving double-sided circuit wafer short-circuited with solder |
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