CN109647783A - A kind of cleaning method and automatic flushing device of quartz wafer - Google Patents
A kind of cleaning method and automatic flushing device of quartz wafer Download PDFInfo
- Publication number
- CN109647783A CN109647783A CN201811589934.8A CN201811589934A CN109647783A CN 109647783 A CN109647783 A CN 109647783A CN 201811589934 A CN201811589934 A CN 201811589934A CN 109647783 A CN109647783 A CN 109647783A
- Authority
- CN
- China
- Prior art keywords
- duration
- cleaning
- chip
- quartz wafer
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
This application discloses a kind of cleaning method of quartz wafer and automatic flushing devices.Cleaning method includes: that the chip to be cleaned is placed in after NPB cleaning solution, preheating after the Micro-90 cleaning solution of constant temperature, deionized water, preheating after the hydrogen peroxide of constant temperature, deionized water, preheating to carry out first time ultrasonic cleaning in the dehydrated alcohol of constant temperature respectively, second of ultrasonic cleaning, first time overflow, immersion corrosion, second of overflow, be dehydrated.The automatic flushing device includes that rinse bath can be isolated at least six, fixture, connecting component, hold assembly, control system, the hold assembly is detachably fixed with the fixture by the connecting component and is connect, and the hold assembly is free in outside the rinse bath, for driving the fixture to immerse or remove each rinse bath.The application can realize that carry out more water section washing lotions to the chip cleans automatically, and duration to each cleaning step and temperature parameter realization are precisely controlled.
Description
Technical field
This application involves crystal element and device field more particularly to the cleaning methods and automatic cleaning dress of a kind of quartz wafer
It sets.
Background technique
Quartz-crystal resonator is manufactured resonant element using the quartz wafer with piezoelectric effect, and is constituted brilliant
The key component of oscillation body device.Since quartz-crystal resonator has small in size, light-weight, high reliablity, frequency stability excellent
A series of excellent characteristics such as good are widely used in the industries such as communication, medical treatment, aerospace, weaponry and field.
The surface cleanness of crystal element and device quartz wafer directly affects the indexs such as the resistance of crystal resonator, ageing rate.
Cleaning process flow step is relatively more.Existing quartz crystal cleaning method usually has manual and automatic two class.In current hand
In dynamic cleaning way, the technological parameters such as temperature, duration, mode (ultrasound, immersion, overflow etc.) of cleaning solution need control manually
System.In currently used automatic cleaning mode, then traditionally it is cleaned by ultrasonic using room temperature deionised water, lacks more water sections
Washing lotion auto-cleaning method and device.Therefore, wafer cleaning needs to realize the parameters such as cleaning duration, cleaning solution temperature accurate
More water section washing methods of control, solving artificial control leads to that operating mistake probability is higher, state modulator accuracy is low, quartz-crystal
The problem that piece surface clean cleanliness is unstable, consistency is poor promotes crystal element and device properties of product stability and reliability.
Summary of the invention
The embodiment of the present application provides a kind of cleaning method of quartz wafer, which comprises the following steps:
The chip to be cleaned is placed in progress first time ultrasonic cleaning in NPB cleaning solution；
The chip is placed in after preheating and carries out second of ultrasonic cleaning, the preheating in the Micro-90 cleaning solution of constant temperature
The temperature of the Micro-90 cleaning solution of constant temperature is 60 DEG C to 90 DEG C afterwards；
The chip is placed in progress first time overflow in deionized water；
The chip is placed in after preheating and carries out immersion corrosion in the hydrogen peroxide of constant temperature, the hydrogen peroxide of constant temperature after the preheating
The temperature of reagent is 60 DEG C to 90 DEG C；
The chip is placed in deionized water and carries out second of overflow；
The chip is placed in after preheating and is dehydrated in the dehydrated alcohol of constant temperature, the dehydrated alcohol of constant temperature after the preheating
Temperature be 60 DEG C to 90 DEG C.
Preferably, further comprising the steps of: the dewatered chip is dried.
Preferably, a length of first duration when the first time is cleaned by ultrasonic, a length of second when being cleaned by ultrasonic for described second
Duration, when first time overflow a length of third duration, when immersion corrosion a length of 4th duration, when the first time overflow
A length of 5th duration, when dehydration a length of 6th duration；First duration, third duration, the 5th duration, the 6th duration are extremely
Few one is 1 to 3 minute；Second duration, the 4th duration at least one be 5 to 10 minutes.
Preferably, the dry duration is the 7th duration, and the described 7th when is 5 to 10 minutes a length of.
Preferably, the NPB cleaning solution is that NPB cleans stoste.
Preferably, the Micro-90 cleaning solution that the Micro-90 cleaning solution is 0.1% to 1.0%.
Preferably, the hydrogen peroxide is the hydrogen peroxide of saturation degree 30%.
The embodiment of the present application also provides a kind of automatic flushing device of quartz wafer, and the cleaning device includes at least six
Rinse bath can be isolated, fixture, connecting component, hold assembly, control system, the fixture is for containing the crystal；The folder
It holds component and is detachably fixed by the connecting component with the fixture and is connect；The hold assembly is free in outside the rinse bath
Portion, for driving the fixture to immerse or remove each rinse bath；The control system includes that input unit and output are single
Member, the input unit are used for for inputting preset temperature and preset duration, the output unit according to the preset temperature tune
The temperature of whole each rinse bath moves the hold assembly according to the preset duration.
Preferably, the cleaning device further includes drying part.
Preferably, the fixture includes that at least one carries hole, cover board and bayonet lock；The load hole is single independent for containing
The quartz wafer；The cover board has card slot, and the cover board is pushed by the card slot and the bayonet lock and connected, the card slot
With the relative position of the bayonet lock is mobile realizes the cover board and the folding for carrying hole, when conjunction the cover board and load hole group
At a confined space.
At least one above-mentioned technical solution that the embodiment of the present application uses can reach following the utility model has the advantages that being able to achieve to institute
The more water section washing lotion cleaning step parameters realization for stating chip is precisely controlled, solve artificial control cause operating mistake probability it is higher,
The problem that state modulator accuracy is low, quartz wafer surface clean cleanliness is unstable, consistency is poor promotes crystal element and device
Properties of product stability and reliability.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is the embodiment flow chart of the application quartz wafer cleaning method；
Fig. 2 is the embodiment flow chart of quartz wafer cleaning method of the application comprising drying steps；
Fig. 3 is the application quartz wafer automatic flushing device schematic diagram.
Specific embodiment
To keep the purposes, technical schemes and advantages of the application clearer, below in conjunction with the application specific embodiment and
Technical scheme is clearly and completely described in corresponding attached drawing.Obviously, described embodiment is only the application one
Section Example, instead of all the embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not doing
Every other embodiment obtained under the premise of creative work out, shall fall in the protection scope of this application.
Below in conjunction with attached drawing, the technical scheme provided by various embodiments of the present application will be described in detail.
Embodiment 1
Fig. 1 is the embodiment flow chart of the application quartz wafer cleaning method.
The chip to be cleaned is placed in progress first time ultrasonic cleaning in NPB cleaning solution by step 100；
Preferably, by the chip be placed in NPB cleaning solution carry out first time ultrasonic cleaning duration be first when
Long, first when, is 1 to 3 minute a length of, including endpoint value.The NPB cleaning solution is that NPB cleans stoste.
Preferably, step 100 can be realized and the chip is placed in NPB cleaning solution automatically.
It is further preferred that described first when, is 3 minutes a length of.
For example, presetting 3 minutes a length of when the first of NPB cleaning stoste.The chip is placed under room temperature automatically, i.e.,
First time ultrasonic cleaning is carried out in NPB cleaning stoste at 25 DEG C, after continuing 3 minutes, the chip is automatically taken out.
The chip is placed in after preheating second of ultrasonic cleaning of progress in the Micro-90 cleaning solution of constant temperature by step 200,
The Micro-90 cleaning solution temperature of constant temperature is 60 DEG C to 90 DEG C after the preheating；
Preferably, the chip being placed in Micro-90 cleaning solution and carrying out the duration of second ultrasonic cleaning is the
Two durations, second when, are 5 to 10 minutes a length of.The Micro-90 cleaning solution that the Micro-90 cleaning solution is 0.1% to 1.0%.
The Micro-90 cleaning solution temperature of constant temperature is 60 DEG C, 65 DEG C, 70 DEG C, 75 DEG C, 80 DEG C, 85 DEG C or 90 after the preheating
℃。
Preferably, step 200 can be realized and the chip is placed in Micro-90 cleaning solution automatically.
It is further preferred that described second when, is 5 minutes a length of.The Micro-90 that the Micro-90 cleaning solution is 0.5%
Cleaning solution.
For example, configuration 0.5% Micro-90 cleaning solution, be set in advance in 0.5% Micro-90 cleaning solution into
5 minutes a length of when capable second be cleaned by ultrasonic for the second time, the Micro-90 cleaning solution temperature of constant temperature is 60 DEG C after preheating.It will
0.5% Micro-90 cleaning solution carries out being heated to 60 DEG C.The chip by ultrasonic cleaning for the first time is placed in automatically and is added
In the Micro-90 cleaning solution of heat to the 0.5% of 60 DEG C, continues the chip after five minutes and automatically taken out.
The chip is placed in progress first time overflow in deionized water by step 300；
Preferably, the chip being placed in deionized water and carrying out the duration of overflow is third duration, the third
Shi Changwei 1 to 3 minute.
It is further preferred that a length of 2 minutes when the third.
For example, 2 minutes a length of when presetting the third for carrying out overflow in deionized water.It will be clear by second of ultrasound
The chip washed is placed under room temperature automatically, i.e., in the deionized water at 25 DEG C, the chip is taken automatically after continuing 2 minutes
Out.
Step 400, by the chip be placed in preheating after constant temperature hydrogen peroxide in carry out immersion corrosion, constant temperature after the preheating
Hydrogen peroxide reagent temperature be 60 DEG C to 90 DEG C；
Preferably, the chip being placed in after preheating and carrying out the duration of immersion corrosion in the hydrogen peroxide of constant temperature is the 4th
Duration, the described 4th when, are 5 to 10 minutes a length of.
The hydrogen peroxide temperature of constant temperature is 60 DEG C, 65 DEG C, 70 DEG C, 75 DEG C, 80 DEG C, 85 DEG C or 90 DEG C after the preheating.
It is further preferred that the described 4th when, is 5 minutes a length of.
Preferably, the hydrogen peroxide is the hydrogen peroxide of saturation degree 30%.
For example, having configured the hydrogen peroxide that saturation degree is 30%, it is set in advance in hydrogen peroxide and carries out the 4th of immersion corrosion
Shi Changwei 5 minutes, the hydrogen peroxide temperature of constant temperature was set as 60 DEG C after preheating.30% hydrogen peroxide is carried out to be heated to 60 DEG C.It will
It is placed in 30% hydrogen peroxide for being heated to 60 DEG C automatically by the chip of first time overflow, continues the crystalline substance after five minutes
Piece is automatically taken out.
The chip is placed in deionized water and carries out second of overflow by step 500；
Preferably, by the chip be placed in deionized water carry out overflow duration be the 5th duration, the described 5th
Shi Changwei 1 to 3 minute.
It is further preferred that the described 5th when, is 2 minutes a length of.
For example, presetting 2 minutes a length of when the carry out second of overflow in deionized water the 5th.It will be rotten by impregnating
The chip of erosion is placed under room temperature automatically, i.e., in the deionized water at 25 DEG C, the chip is taken automatically after continuing 2 minutes
Out.
Step 600, by the chip be placed in preheating after constant temperature dehydrated alcohol in be dehydrated, constant temperature after the preheating
The temperature of dehydrated alcohol is 60 DEG C to 90 DEG C.
Preferably, when the chip being placed in that the duration that is dehydrated is the 6th in the dehydrated alcohol of constant temperature after preheating
Long, the described 6th when, is 1 to 3 minute a length of.
The dehydrated alcohol temperature of constant temperature is 60 DEG C, 65 DEG C, 70 DEG C, 75 DEG C, 80 DEG C, 85 DEG C or 90 DEG C after the preheating.
It is further preferred that the described 6th when, is 2 minutes a length of.
For example, being set in advance in when the be dehydrated in dehydrated alcohol the 6th a length of 2 minutes, the anhydrous second of constant temperature after preheating
Alcohol temperature is 60 DEG C.The chip Jing Guo second of overflow is placed in preheating temperature reaches in 60 DEG C of dehydrated alcohol and takes off
Water, duration are taken out after 2 minutes.
Fig. 2 is the embodiment flow chart of quartz wafer cleaning method of the application comprising drying steps.The present embodiment is except packet
Containing step 100~600 outside, further included after step 600:
The dewatered chip is dried step 700.
It preferably, is the 7th duration by the dry duration of the dewatered chip, the described 7th when is 5 to 10 points a length of
Clock.
It is further preferred that the described 6th when, is 10 minutes a length of.
It is described that the dewatered chip is dry using drying mode.
For example, presetting when drying the 7th dried a length of 10 minutes.The chip by dehydration is automatic
It is taken out from the dehydrated alcohol, the drying carried out 10 minutes is automatically taken out.
Preferably, in step 100 to step 600, after the chip is automatically placed in the NPB cleaning solution, the preheating
After the Micro-90 cleaning solution of constant temperature, the deionized water, the preheating after the hydrogen peroxide of constant temperature, the preheating constant temperature it is anhydrous
In ethyl alcohol.
Fig. 3 is the application quartz wafer automatic flushing device schematic diagram.The quartz wafer of the embodiment of the present application cleans automatically
Rinse bath 10,11,12,13,14,15, fixture 20, connecting component 30, hold assembly 40, control can be isolated in device, including at least six
System 50 processed；
The fixture 20 is for containing the crystal；
Preferably, the fixture 20 includes that at least one carries hole 21, cover board 22 and bayonet lock；The load hole is single for containing
The independent quartz wafer；The cover board has card slot, and the cover board is pushed by the card slot and the bayonet lock and connected, institute
State card slot and the bayonet lock relative position it is mobile realize the cover board and the folding for carrying hole, when conjunction the cover board with it is described
It carries hole and forms a confined space.
For example, choosing the fixture of adaptation according to the wafer profile size.5 are provided on the fixture 20 chosen
The chip individually independent can be fitted into the load hole 21 by a load hole 21, i.e., a chip is placed in one load hole 21；
The cover board 22 has card slot, and the cover board 22 is pushed by the card slot and the bayonet lock and connected.When the card slot and described
Bayonet lock relative position is mobile when driving the cover board 22 with the loads hole 21 closure, at this time the cover board 22 and 21 groups of the load hole
At a confined space, for guaranteeing that the chip is not lost from the fixture in cleaning procedure；When the card slot and described
When the bayonet lock relative position mobile drive cover board 22 is opened with the load hole 21, the cover board 22 and the load hole 21 are at this time
Open space, for the chip being put into or being cleaned before cleaning after the chip is taken out.
The hold assembly 40 is detachably fixed with the fixture 20 by the connecting component 30 and is connect；
Preferably, the connecting component 30 is loop bar, and the fixture 20 can be sleeved and fixed on the hold assembly 40.
The hold assembly 40 is free in outside the rinse bath 10, for driving described in the immersion of fixture 20 or removal
Rinse bath 10~15；
Preferably, the hold assembly 40 is mechanical part.
For example, the hold assembly 40 is robotic arm, the fixture 20 is sleeved and fixed by the loop bar described
On robotic arm.The robotic arm is mobile, the fixture can be driven to move up and down, to keep the chip automatic
Merging is taken out from the cleaning solution automatically.
The control system 50 includes input unit and output unit, and the input unit is for inputting preset temperature and pre-
If duration, the output unit is used to adjust the temperature of each rinse bath, the mobile hold assembly.
The output unit further includes temperature controlling device, temperature sensor and temperature feedback device, the temperature controlling device and temperature
Degree sensor is connect with the rinse bath, and the temperature feedback device is connect with the input unit realizes signal transmission；
The temperature controlling device is used to heat or the rinse bath that freezes, and reaches the set temperature；
The temperature sensor is for monitoring the rinse bath real time temperature；
The temperature feedback device gives the differential transmission of the real time temperature signal of the temperature sensor and preset temperature
The input unit.
It should be noted that when the real time temperature signal of the temperature sensor and preset temperature are inconsistent, it is described defeated
Unit is unable to the control signal of hold assembly described in output mobile out.
Preferably, the cleaning device further includes drying part 60.
The drying part 60 is the device with drying functions.
It should be understood by those skilled in the art that, the embodiment of the present invention can provide as method, system or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the present invention
Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the present invention, which can be used in one or more,
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces
The form of product.
It should also be noted that, the terms "include", "comprise" or its any other variant are intended to nonexcludability
It include so that the process, method, commodity or the equipment that include a series of elements not only include those elements, but also to wrap
Include other elements that are not explicitly listed, or further include for this process, method, commodity or equipment intrinsic want
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including described want
There is also other identical elements in the process, method of element, commodity or equipment.
The above description is only an example of the present application, is not intended to limit this application.For those skilled in the art
For, various changes and changes are possible in this application.All any modifications made within the spirit and principles of the present application are equal
Replacement, improvement etc., should be included within the scope of the claims of this application.
Claims (10)
1. a kind of cleaning method of quartz wafer, which comprises the following steps:
The chip to be cleaned is placed in progress first time ultrasonic cleaning in NPB cleaning solution；
The chip is placed in after preheating and carries out second of ultrasonic cleaning in the Micro-90 cleaning solution of constant temperature, it is permanent after the preheating
The temperature of the Micro-90 cleaning solution of temperature is 60 DEG C to 90 DEG C；
The chip is placed in progress first time overflow in deionized water；
The chip is placed in after preheating and carries out immersion corrosion in the hydrogen peroxide of constant temperature, the hydrogen peroxide reagent of constant temperature after the preheating
Temperature be 60 DEG C to 90 DEG C；
The chip is placed in deionized water and carries out second of overflow；
The chip is placed in after preheating and is dehydrated in the dehydrated alcohol of constant temperature, the temperature of the dehydrated alcohol of constant temperature after the preheating
Degree is 60 DEG C to 90 DEG C.
2. a kind of cleaning method of quartz wafer according to claim 1, which is characterized in that further comprising the steps of: will
The dewatered chip is dried.
3. a kind of cleaning method of quartz wafer according to claim 1, it is characterised in that: the first time ultrasonic cleaning
The first duration of Shi Changwei, described second a length of second duration when being cleaned by ultrasonic, when first time overflow a length of third duration,
A length of 4th duration when the immersion corrosion, when second of overflow a length of 5th duration, when a length of 6th when the dehydration
It is long；
First duration, third duration, the 5th duration, the 6th duration at least one be 1 to 3 minute；
Second duration, the 4th duration at least one be 5 to 10 minutes.
4. a kind of cleaning method of quartz wafer according to claim 2, it is characterised in that: the dry duration is
7th duration, the described 7th when, are 5 to 10 minutes a length of.
5. a kind of cleaning method of quartz wafer according to claim 1, which is characterized in that the NPB cleaning solution is NPB
Clean stoste.
6. a kind of cleaning method of quartz wafer according to claim 1, which is characterized in that the Micro-90 cleaning solution
For 0.1% to 1.0% Micro-90 cleaning solution.
7. a kind of cleaning method of quartz wafer according to claim 1, which is characterized in that the hydrogen peroxide is saturation degree
30% hydrogen peroxide.
8. a kind of automatic flushing device of quartz wafer, for realizing claim 1 to 7 any one quartz wafer it is clear
Washing method, the cleaning device include that rinse bath, fixture, connecting component, hold assembly, control system, institute can be isolated at least six
Fixture is stated for containing the crystal, it is characterised in that:
The hold assembly is detachably fixed with the fixture by the connecting component and is connect；
The hold assembly is free in outside the rinse bath, for driving the fixture to immerse or remove each cleaning
Slot；
The control system includes input unit and output unit, the input unit for input preset temperature and it is default when
Long, the output unit is used to adjust the temperature of each rinse bath according to the preset temperature, according to preset duration movement
The hold assembly.
9. a kind of automatic flushing device of quartz wafer according to claim 8, which is characterized in that the cleaning device is also
Including drying part.
10. a kind of automatic flushing device of quartz wafer according to claim 8, which is characterized in that the fixture includes
At least one carries hole, cover board and bayonet lock；
The load hole is for containing the single independent quartz wafer；
The cover board has card slot, and the cover board is pushed by the card slot and the bayonet lock and connected, the card slot and the card
The relative position of pin is mobile to realize the cover board and the folding for carrying hole, and the cover board and load hole composition one are close when conjunction
Close space.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811589934.8A CN109647783A (en) | 2018-12-25 | 2018-12-25 | A kind of cleaning method and automatic flushing device of quartz wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811589934.8A CN109647783A (en) | 2018-12-25 | 2018-12-25 | A kind of cleaning method and automatic flushing device of quartz wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109647783A true CN109647783A (en) | 2019-04-19 |
Family
ID=66116041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811589934.8A Pending CN109647783A (en) | 2018-12-25 | 2018-12-25 | A kind of cleaning method and automatic flushing device of quartz wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109647783A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111330905A (en) * | 2020-04-13 | 2020-06-26 | 中国原子能科学研究院 | Cleaning system |
| CN111330906A (en) * | 2020-04-13 | 2020-06-26 | 中国原子能科学研究院 | Cleaning process |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101219429A (en) * | 2007-01-10 | 2008-07-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning quartz parts surface in polycrystal etching cavity |
| JP2008194638A (en) * | 2007-02-14 | 2008-08-28 | Schott Lithotec Usa Corp | New cleaning method for mask and mask blank |
| CN101708497A (en) * | 2009-12-11 | 2010-05-19 | 廊坊中电大成电子有限公司 | Method for cleaning quartz crystal frequency chip |
| CN201966185U (en) * | 2011-03-02 | 2011-09-07 | 铜陵市永创电子有限责任公司 | Wafer cleaning device |
| CN103449731A (en) * | 2013-09-06 | 2013-12-18 | 中国工程物理研究院激光聚变研究中心 | Method for improving damage threshold of fused quartz optical element |
| CN103639149A (en) * | 2013-12-09 | 2014-03-19 | 山东百利通亚陶科技有限公司 | Method for cleaning wafer |
| CN205613769U (en) * | 2016-05-06 | 2016-10-05 | 紫光国芯股份有限公司 | Quartzy wafer nitric acid belt cleaning device |
| CN107240546A (en) * | 2017-06-20 | 2017-10-10 | 山西潞安太阳能科技有限责任公司 | A kind of silicon wafer cleaning method after Buddha's warrior attendant wire cutting |
-
2018
- 2018-12-25 CN CN201811589934.8A patent/CN109647783A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101219429A (en) * | 2007-01-10 | 2008-07-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning quartz parts surface in polycrystal etching cavity |
| JP2008194638A (en) * | 2007-02-14 | 2008-08-28 | Schott Lithotec Usa Corp | New cleaning method for mask and mask blank |
| CN101708497A (en) * | 2009-12-11 | 2010-05-19 | 廊坊中电大成电子有限公司 | Method for cleaning quartz crystal frequency chip |
| CN201966185U (en) * | 2011-03-02 | 2011-09-07 | 铜陵市永创电子有限责任公司 | Wafer cleaning device |
| CN103449731A (en) * | 2013-09-06 | 2013-12-18 | 中国工程物理研究院激光聚变研究中心 | Method for improving damage threshold of fused quartz optical element |
| CN103639149A (en) * | 2013-12-09 | 2014-03-19 | 山东百利通亚陶科技有限公司 | Method for cleaning wafer |
| CN205613769U (en) * | 2016-05-06 | 2016-10-05 | 紫光国芯股份有限公司 | Quartzy wafer nitric acid belt cleaning device |
| CN107240546A (en) * | 2017-06-20 | 2017-10-10 | 山西潞安太阳能科技有限责任公司 | A kind of silicon wafer cleaning method after Buddha's warrior attendant wire cutting |
Non-Patent Citations (3)
| Title |
|---|
| 张剑波，等: "《清洗技术基础教程》", 31 July 2014 * |
| 格尔塞尔等: "《集成电路工程 设计、制造应用》", 30 April 1985 * |
| 薛婉瑜等: "《电子工业工艺技术成果选编》", 31 March 1986, 太原电子工艺技术编辑部 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111330905A (en) * | 2020-04-13 | 2020-06-26 | 中国原子能科学研究院 | Cleaning system |
| CN111330906A (en) * | 2020-04-13 | 2020-06-26 | 中国原子能科学研究院 | Cleaning process |
| CN111330905B (en) * | 2020-04-13 | 2021-06-29 | 中国原子能科学研究院 | Cleaning system and cleaning method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109647783A (en) | A kind of cleaning method and automatic flushing device of quartz wafer | |
| CN104609856B (en) | The highly preparation method of preferred orientation bismuth titanate sodium titanate-barium lead-free piezoelectric thin film | |
| CN102962226A (en) | Method for cleaning polished sapphire substrate wafer | |
| TWI479548B (en) | Megasonic cleaning with controlled boundary layer thickness and associated systems and methods | |
| CN106629834A (en) | Method for using recrystallization method to prepare lead-halide perovskite nanowire | |
| KR20010007593A (en) | A brushless multipass silicon wafer cleaning process for post chemical mechanical polishing using immersion | |
| CN103489760B (en) | The method of SiC substrate homoepitaxy carbon silicon double-atomic-layer film | |
| CN106129797A (en) | Based on WS2the ultrashort pulse fiber laser of/Graphene hetero-junctions | |
| CN104775167A (en) | Cleaning method and equipment of spinneret plate for polyacrylonitrile fiber | |
| TW201127505A (en) | Ultrasonic cleaning apparatus, ultrasonic cleaning method and storage medium storing computer program for executing ultrasonic cleaning method | |
| CN108232013B (en) | The method for preparing zirconia film and flexible transistor | |
| Chen et al. | Scandium-doped aluminum nitride for acoustic wave resonators, filters, and ferroelectric memory applications | |
| JPS62281431A (en) | Method and device for ultrasonic cleaning | |
| CN107112983B (en) | Universal oscillator | |
| CN206854241U (en) | Multifrequency alternate oscillation ultrasonic washing instrument for photoelectricity parts | |
| CN104946879A (en) | Method and device for controlling electric domain of ferroelectric crystal | |
| CN110581095A (en) | Etching device and etching method | |
| US20170018424A1 (en) | Method for cleaning lanthanum gallium silicate wafer | |
| CN108531857A (en) | Utilize the method for Bending Deformation regulation and control barium titanate single-crystal film excess polarization and coercive field | |
| CN109809391B (en) | Method for preparing carbon nano tube film | |
| JP6009268B2 (en) | Cleaning liquid generating apparatus, cleaning liquid generating method, substrate cleaning apparatus, and substrate cleaning method | |
| CN208980829U (en) | A kind of lithium niobate method corrosion device | |
| JPH1022245A (en) | Method and apparatus for removing foreign matter from semiconductor device | |
| CN109513677A (en) | Silk-screen sapphire strip cleaning method | |
| CN103505945B (en) | A kind of method for suppersonic cleaning of VCV crosslinking unit screen plate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190419 |