CN109642309A

CN109642309A - High accurancy and precision covers shady mask deposition system and its method

Info

Publication number: CN109642309A
Application number: CN201780042868.XA
Authority: CN
Inventors: M·阿南丹; A·高希; F·瓦然; E·多诺霍; I·哈尤林; T·阿里; K·泰斯
Original assignee: Angstrom Gold Corp
Current assignee: Angstrom Gold Corp
Priority date: 2017-05-17
Filing date: 2017-07-24
Publication date: 2019-04-16
Anticipated expiration: 2037-07-24
Also published as: JP7134095B2; KR102378672B1; KR20200008936A; TWI737795B; CN109642309B; JP2019517623A; TW201900901A

Abstract

The present invention discloses a kind of Direct precipitation system that high-resolution patterns of material is formed on the substrate.Vaporization atom from evaporation source is by covering the through-hole pattern of shady mask to be deposited on the substrate by institute's desirable pattern.It covers shady mask by described and is immobilizated in mask chuck, the mask chuck enables described to cover shady mask and the substrate is spaced and is smaller than 10 microns of distance.Before covering shady mask described in the arrival, vaporization atom is the collimator of spatial filter by operation, and the spatial filter stops any atom that do not advance along the direction for being approximately perpendicular to the substrate surface.Deflection dispersion is not showed seldom or after through through-hole by the vaporization atom for covering shady mask, and the material relative to the through-hole pattern for covering shady mask to have very Hi-Fi pattern deposition on the substrate.

Description

High accurancy and precision covers shady mask deposition system and its method

The statement of related case

In the U.S. provisional patent application cases (generation of Serial No. 62/340,793 filed on May 24th, 2016, is advocated in this case Manage file number: 6494-208PR1) priority, it is described be incorporated by reference herein in its entirety herein.This case is also main Serial No. 15/597,635 filed on May 17th, 2017 U.S. Non-provisional Patent application case (attorney docket: 6494-208US1) and the U.S. Non-provisional Patent application case (generation of Serial No. 15/602,939 filed on May 23rd, 2017 Manage file number: 6494-209US1) priority, it is described two be incorporated by reference herein in its entirety herein.

Technical field

The present invention relates generally to film depositions, and more particularly, and the present invention relates to the film depositions based on vapor deposition.

Background technique

It is that institute's desirable pattern of the layer will be made to exist on the surface of material layer depositions to substrate based on the deposition for covering shady mask The process being defined during deposition process itself.This deposition technique is sometimes referred to as " directly patterning ".

Covered in shady mask deposition event in typical case, with the source of substrate distance at vaporize wanted material, wherein covering Between shady mask alignment Yu Yuanyu substrate.When the vaporization atom of material is advanced towards substrate, by covering one in shady mask Group through-hole, it is described to cover shady mask alignment in the front of substrate surface.Through-hole (that is, hole) makes material be arranged to institute on substrate Desirable pattern.Therefore, it covers whole vaporization atoms of the shady mask blocks in addition to the vaporization atom by through-hole to pass through, passes through through-hole Vaporization atom is deposited on substrate surface with institute's desirable pattern.It is similar to based on the deposition for covering shady mask for for developing art The silk screening techniques of pattern (such as uniform number etc.) are formed on the clothes or template article of product.

For many years, it is used to patterns of material being deposited on lining in integrated circuit (IC) industry based on the deposition for covering shady mask On bottom, this is partly due to it and avoids the need for the fact that pattern the material layer after deposition materials layer.Therefore, it uses It will it is not necessary that deposition materials are exposed to harmful chemical (such as acidic etchant, causticity photoetching development chemical substance etc.) It is patterned.In addition, needing less disposition and processing substrate based on the deposition for covering shady mask, the risk of substrate damage is reduced whereby And improve manufacturing yield.In addition, many materials of such as organic material cannot be subjected to photoetching in the case where not making it impaired Substance is learned, this makes to deposit such material by covering shady mask as inevitable.

Unfortunately, the feature resolution that can cover shady masked-deposition by routine to obtain is because deposition materials are intended to passing through The fact that cover deflection dispersion after shady mask (referred to as " sprouting wings (feathering) ") and reduce.Sprout wings with substrate and covers shady mask Between spacing magnitude and increase.Sprout wings to mitigate, do not undermine holding substrate and cover shady mask chuck integrality In the case of make this spacing keep it is as small as possible.In addition, any heterogeneity in this spacing across deposition region will lead to emergence The variation of amount.This heterogeneity by (for example) substrate and can cover between shady mask not parallel, substrate and cover the one or two of shady mask Person arches upward or sagging and so on causes.

Unfortunately, it can be difficult to shady mask will cover and substrate is positioned to close enough to avoid causing largely to sprout wings.In addition, It must only be supported at the periphery for covering shady mask and cover shady mask to avoid stopping vaporization atom to pass through through-hole pattern.Therefore, shade is covered The center of mask can be sagging because of gravity, this is further exacerbated by emergence problem.

Therefore, in fact, by the key feature of the prior art formed based on the deposition technique for covering shady mask usually by phase To larger open spaces region disconnecting to adapt to sprout wings, this limits obtainable device density.For example, active-matrix organic light emission Each pixel of diode (AMOLED) display generally comprises several luminous organic material areas of each spontaneous emission different color light Domain.Due to emergence problem, the displayer of the prior art be usually limited to about 600 pixels (600ppi) of per inch or Smaller, this should be used to say that many of for example close eye augmented reality and virtual reality applications insufficient.In addition, pixel in and picture Need wide arc gap that the pixel filling factor is caused to reduce between element, this reduces display brightness.Therefore, it is necessary to increase through organic layer Current density provides wanted brightness, this can negatively affect display life.

Alternative is to cover shady mask using with the hole big with the active area sample of display itself come across entire Display deposition emits monolithic white light organic layer and then patterns or be deposited on OLED's red, green and blue filter On top.These coloured filters absorb in addition to the red of spectrum, green or blue portion (depending on coloured filter) All transmitting white lights, to allow to generate full-colour image.However, these coloured filters absorb up to 80% transmitting light, this is aobvious It writes and reduces display brightness, to needed again to be higher than wanted driving current and operate.

In the prior art, do not meet yet to the needs for realizing the directly patterned process of high-resolution.

Summary of the invention

The patterning materials on substrate are realized in the case that the present invention is not the shortcomings that increasing cost and overcoming the prior art The high-resolution Direct precipitation of layer.The angle of propagation for vaporizing atom is filtered into around the table perpendicular to substrate by the embodiment of the present invention The close limit in the direction in face.Therefore, mitigate the emergence of the deposition materials outside the lateral dimension for the feature for covering shady mask.Of the invention Sensitive material of the embodiment particularly suitable for depositing such as luminous organic material.Embodiment is also very suitable for depositing encapsulation and answers With the processing of, integrated circuit apply and so in other films and thick film layers.

The present invention further realizes the high accurancy and precision alignment for covering shady mask and substrate that is accessible or being only spaced a few micrometers.This Invention also mitigate the gravity for covering shady mask being only supported at its periphery be led to it is sagging.The embodiment of the present invention is especially very suitable In the application for needing high density material pattern on substrate, for example, dense-pixel display (DPD), High Resolution Display and its Fellow.

Illustrative embodiments of the invention is a kind of direct patterned deposition system, and wherein material is vaporized in Yuan Chu, is made It obtains on the surface that it is deposited on substrate after the pattern of apertures by covering shady mask.The vaporization atom covers described in reaching at it Pass through collimator before shady mask, the collimator stops except the propagation with the direction for being nearly perpendicular to the substrate surface Whole vaporization atoms except the vaporization atom at angle.Therefore, compared with prior art, hole and its correspondingly deposited material area it Between lateral deviation be reduced.

The collimator include with Gao Gaokuan aspect ratio multiple channels, wherein the longitudinal axis in the channel generally with hang down Histogram is to alignment.Therefore, do not stopped along the vaporization atom advanced close to vertical direction by the inner sidewall in the channel.

In some embodiments, the source is set size and arrangement to provide the taper steam plumage (vapor of vaporization atom Plume), so that the entire substrate surface receives evaporation of materials simultaneously.In several persons in these embodiments, moved along path The source is moved, so that the uniformity of the thickness of the deposition materials on the 2 dimensional region of the substrate surface is improved.

In some embodiments, the source is the linear sources for emitting fan-shaped steam plumage, wherein the linear sources along not with its The direction of longitudinal axis alignment is mobile.In several persons in these embodiments, along be generally orthogonal to the source the longitudinal axis and The mobile source in the direction of both vertical direction.In several persons in these embodiments, institute is moved along nonlinear path State source.

In some embodiments, the source includes multiple individual nozzles, and each of these person emits taper steam plumage, so that The nozzle provides the substantial uniform vaporization atomic current on the region of the substrate surface jointly.

In some embodiments, the source is two-dimensional surface source, is arranged into and is parallel to and towards the substrate, so that Flat surfaces of the organic material when being heated across the source equably vaporize.In some embodiments, the source and institute are provided State the thickness uniformity for covering the deposition materials on 2 dimensional region of the relative motion between shady mask to improve the substrate surface.

Another illustrative embodiments of the invention is a kind of direct patterned deposition system comprising: the first chuck, tool There is the first mounting surface for holding substrate；And second chuck, having for hold includes that through-hole pattern covers shady mask The second mounting surface.Second chuck includes bracket, around the through-hole pattern covered in shady mask described in exposure Central opening.Therefore, during deposition, the vaporization atom of material can be by second chuck and the through-hole with by being schemed Case is deposited on the deposition region of the front surface of the substrate.

First chuck generates the first electrostatic force for being applied selectively to the rear surface of the substrate.First card Disk is also set size and is arranged such that it does not protrude past the front surface of the substrate.In a similar manner, second chuck Generate the second electrostatic force for being applied selectively to the rear surface for covering shady mask.Second chuck be also set size and It is arranged such that it does not protrude past the front surface for covering shady mask.When described with covering shady mask and substrate alignment for sinking When product, first chuck and second chuck invade the substrate and three covered between shady mask without any part In dimension space.Therefore, the substrate and it is described cover shady mask and can be located very close to during deposition or even contact, whereby Mitigate and sprouts wings.

In some embodiments, in first suction and second suction to few one be such as vacuum generation The non-electrostatic force of power, magnetic force etc..

In some embodiments, second mounting surface be set size and arrangement with it is described cover shady mask before table Tensile stress is generated in face, the gravity for the central area for covering shady mask described in mitigation is led to sagging.In some such embodiments In, the bracket of second chuck makes its mounting surface incline far from the top edge of the inner periphery of the bracket through moulding Tiltedly.Therefore, when it is described cover shady mask and be installed in second chuck when, described to cover shady mask and become slightly to arch upward, this is led to Tensile stress in the front surface for covering shady mask.In these some embodiments, the mounting surface is from the bracket The top edge of the inner periphery is bent downwardly.

The embodiment of the present invention is a kind of multiple deposition positions for the first material to be deposited in the deposition region of substrate System on point, the multiple deposition site are arranged to the first arrangement, wherein the substrate is comprising the first main surface and including institute The second main surface for stating deposition region, the system comprises: it is former to be used to provide the described the more vaporizations of the first of the first material for source Son, each of vaporization atom is propagated along the direction of propagation more than described first, the direction of propagation with relative to perpendicular to by The angle of propagation of the first direction for the first plane that the substrate defines is characterized, wherein the propagation of more than described first vaporization atom First angular region of range spans at angle；Cover shady mask comprising multiple through-holes of first arrangement are arranged to, wherein described cover Shady mask includes third main surface and the 4th main surface including the through-hole；First chuck is used to hold the substrate, institute It states the first chuck and is set size and arrangement so that the first suction is selectively bestowed first main surface；Second chuck, For hold it is described cover shady mask, second chuck includes bracket, and the support ring is described around enabling the material to pass through Second chuck and to the through-hole first opening, second chuck be set size and arrangement with by the second suction selectivity Bestow the third main surface in ground；Collimator comprising multiple channels, the collimator cover shady mask with described between the source Between, wherein each of the multiple channel is set size and arrangement only to make with less than first angular region The vaporization atom of angle of propagation in second angular region passes through；And positioning system, it is used to control first chuck and described The relative position of two chucks is so that described cover shady mask and substrate alignment.

Another embodiment of the present invention is a kind of multiple heavy in the deposition region of substrate for the first material to be deposited on System on product site, the multiple deposition site are arranged to the first arrangement, wherein the substrate includes the first main surface and tool There is the second main surface of the first lateral extent, the system comprises: source can be operated to provide multiple vaporization atoms, described more Each of a vaporization atom is advanced along the direction of propagation for defining angle of propagation, wherein the multiple angle of propagation crosses over first jiao of model It encloses；Cover shady mask comprising be arranged to multiple through-holes of first arrangement, to cover shady mask include third main surface wherein described And the 4th main surface including the through-hole, wherein it is described cover shady mask and the multiple deposition site define jointly be less than it is described The acceptable angular region of first angular region；First chuck is used to hold the substrate；Second chuck is used to hold described Shady mask is covered, second chuck includes bracket, and the support ring is arrived by second chuck around enabling the material First opening of the through-hole；Wherein when it is described cover shady mask and the substrate and be aligned when, it is described to cover shady mask and the substrate Second area is defined jointly, the second area (1) has the second lateral extent equal to or more than first lateral extent, (2) have and be equal to the substrate and the thickness for covering the spacing between shady mask, and (3) do not include first chuck and institute State the second chuck；Wherein first chuck and second chuck is set size and arrangement so that the thickness can be less than 10 microns；And collimator, be positioned at the source and it is described cover between shady mask, the collimator includes multiple channels, described Each of multiple channels have the wide aspect ratio of the height for defining the filtering angular region less than or equal to the acceptable angular region.

Another embodiment of the present invention is a kind of to be arranged to the first arrangement on substrate for the first material to be deposited on Method on multiple deposition sites, wherein the substrate includes the first main surface and the second main table with the first lateral extent Face, second main surface includes first area, the method comprise the steps that it is former to receive more than first vaporizations at collimator Son, the collimator positioner being covered between shady mask in source and with the multiple through-holes for being arranged to first arrangement, wherein institute State that cover shady mask include third main surface and the 4th main surface including the through-hole, wherein more than described first vaporization atom with First propagation angular region is characterized；The substrate is immobilizated in the first chuck, first chuck is selective by the first suction Bestow first main surface in ground；It covers shady mask by described and is immobilizated in the second chuck, second chuck selects the second suction Bestow to selecting property the third main surface, wherein second chuck enable include the material particle by described second Chuck and arrive the through-hole；Shady mask is covered described in by the collimator with making more than second vaporization atoms, Described in more than second vaporization atoms by be narrower than described first propagate the second of angular region propagate angular region characterized by；And positioning institute State substrate and it is described cover shady mask so that second main surface and the 4th main surface interval are less than or equal to 10 microns Distance；And enable to pass through second chuck and the multiple through-hole to few several persons in more than described second vaporization atom And it is deposited on the substrate.

Detailed description of the invention

Fig. 1 describes the schematic diagram of the cross section of the main feature of direct patterned deposition system according to prior art.

Fig. 2 describes the main feature of the direct patterned deposition system of high accurancy and precision of illustrative embodiments according to the present invention Cross section schematic diagram.

Fig. 3 describes the behaviour of the method for being deposited on direct patterned material layer on substrate according to illustrative embodiments Make.

Fig. 4 A to B describes the schematic diagram of top view and cross-sectional view according to the mask chuck of illustrative embodiments respectively.

Fig. 5 describes the cross-sectional view for covering shady mask 106 being installed in mask chuck 206.

Fig. 6 A describes the signal of the cross-sectional view of the part of the mask chuck 206 of the first alternate embodiment according to the present invention Figure.

Fig. 6 B describes the signal of the cross-sectional view of the part of the mask chuck 206 of the second alternate embodiment according to the present invention Figure.

Fig. 7 A to B describes the top view and cross-sectional view of the mask chuck of third alternate embodiment according to the present invention respectively Schematic diagram.

Fig. 8 A describes the schematic diagram of the cross-sectional view of the mask chuck according to illustrative embodiments.

Fig. 8 B describes the schematic diagram of cross-sectional view of the substrate chuck 204 in holding substrate 102.

The schematic diagram of the cross-sectional view of the part of Fig. 9 trace system 100 wherein substrate 102 and covers shady mask 106 alignment ground Deposition for material 116.

Figure 10 describes the pixel region of substrate 102 and covers the signal of its enlarged drawing for corresponding to hole 120 of shady mask 106 Figure.

Figure 11 A describes the schematic diagram of the cross-sectional view of the collimator according to illustrative embodiments.

Figure 11 B to C describes the top view in the region of collimator 208 and the schematic diagram of sectional view respectively.

Specific embodiment

Fig. 1 describes the schematic diagram of the cross section of the main feature of direct patterned deposition system according to prior art.System System 100 is conventional deposition system, covers shady mask for wanted material figure by being positioned in front of substrate by evaporation material Case is deposited on substrate.System 100 includes the source 104 being arranged in low-voltage vacuum room (not showing in figure) and covers shady mask 106.

Substrate 102 is adapted for forming the glass substrate of active-matrix Organic Light Emitting Diode (AMOLED) display.Substrate 102 surfaces 114 comprising defining plane 108 and vertical axis 110.Vertical axis 110 is orthogonal to plane 108.Surface 114 includes to be used for It receives the multiple deposition site G for emitting the material of green light, multiple deposition site B of the material for receiving transmitting blue light and is used for Receive multiple deposition site R of the material of transmitting feux rouges.Deposition site is arranged in multiple pixel regions 112, so that each picture Plain region includes a deposition site of the luminescent material for each color.

Source 104 is the crucible for vaporizing material 116, and material 116 is the organic material for emitting the light of wanted wavelength.? In discribed example, material 116 is the luminous organic material for emitting feux rouges.In the illustrated case, source 104 be relative to The single chamber crucible placed in the middle of substrate 102；However, in some embodiments, source 104 is one-dimensional and/or two-dimensional arrangement comprising being arranged to Multiple rooms.When material 116 is melted or distilled in the low pressure atmosphere of vacuum chamber 110, the vaporization atom 122 of material 116 is from source It projects and is propagated in a manner of generally trajectory towards substrate 102.The vaporization atom projected by source 104 defines steam plumage 124 jointly.

Covering shady mask 106 is the structural wood flitch comprising hole 120.Shady mask is covered generally to be flat and define plane 118.Shady mask alignment is covered between source 104 and substrate 102, so that its blocking is complete in addition to the vaporization atom by its hole Portion's vaporization atom passes through.Shady mask and substrate space distance s (usually tens of or hundreds of microns) are covered, plane 108 and 118 is substantially It is upper parallel, and hole 120 is aligned with deposition site R.

It is desirable that vaporization atom is only incident on deposition site R when depositing red-luminescing material 116.Unfortunately, steam Plumage 124 includes the vaporization atom advanced along many different directions of propagation 126, many directions of propagation not direction with vertical axis 110 Alignment.Therefore, it is advanced by most of vaporization atom of hole 120 along the direction of propagation with considerable cross stream component.Each vapour Change atom geometrically depending on its angle of propagation and substrate in the incidence point on surface 114 and covering the space pass between shady mask System, specifically, the alignment of distance s and hole 120 and deposition site R.In order to which (it includes appended claims for this specification Book), by term " angle of propagation " be defined as by vaporization atom relative to the plane 108 perpendicular to substrate 102 direction (that is, vertical Direction 128 is aligned with vertical axis 110) the direction of propagation formed angle.For example, vaporization atom 122 is along the direction of propagation 126 It advances, the direction of propagation 126 forms propagation angle theta p relative to vertical direction 128.

The relatively large angular region of the angle of propagation leap-θ m to+θ m of the vaporization atom of steam plumage 124, this leads to existing skill The significant drawback of art Direct precipitation system.In particular, the surface 114 for causing material 118 to be deposited on outside the periphery of hole 120 On, this commonly referred to as " sprouts wings ".In addition, the emergence amount at hole can increase at a distance from the center of substrate 102 with the hole Add.

For being positioned at the hole of the immediate vicinity of steam plumage 124, reaching the vaporization atom 122 for covering shady mask 106 has Angle of propagation in relatively small angular region.In other words, it advances along the direction for being only offset slightly from vertical axis 110.Therefore, pass through The vaporization atom of these holes is only showing minimum lateral drift (that is, emergence) after shady mask by covering.Therefore, in this region In, the lateral extent of deposition materials 116 is usually almost aligned (that is, it is mainly deposited on target deposition position with the edge of hole 120 On point R).

However, the vaporization atom that shady mask 106 is covered in arrival crosses over phase for the hole further from the center of steam plumage 124 To larger angular region and include to be relatively close to | θ m | angle of propagation.Therefore, in that region, vaporization atom is covered by covering shade The lateral distance advanced after mould is larger, sprouts wings so as to cause the deposition materials for the lateral extent for being completely out of hole.This causes Lateral shift δ f between the edge of aperture and the wherein periphery in the region of deposition materials 116.Therefore, deposition materials extend Region beyond target deposition site.In some cases, this emergence, which can lead to material and be deposited on, is desirably used for different luminous materials On the deposited adjacent site (that is, deposition site B and/or G) of material, lead to color mixture whereby.

It should be noted that any additional misalignment covered between shady mask and substrate can aggravate to sprout wings, for example, deviate plane 108 and 118 depth of parallelism (that is, relative spacing and/or deflection between mask and substrate), the uneven degree for covering shady mask and/or substrate And the translation and/or rotation covered between shady mask and substrate are misaligned.In addition, many prior art depositing systems (such as with In the system etc. for depositing more than one materials) in, source 104 is positioned relative to substrate bias, this causes even more big emergence to be asked Topic.

Those skilled in the art should be understood that making to cover shady mask 106 contacts with substrate 102 during deposition and will mitigate Or even completely eliminate emergence problem.Unfortunately, for various reasons, this is undesirable or impossible in most cases. First, it the substrate of the prior art and covers shady mask chuck and usually separately includes the feature for protruding past substrate and covering shady mask.Cause This, these features become limitation substrate and cover the barrier element of the close positioning degree of shady mask.Second, it is contacted with shady mask is covered The existing structure mechanism on the surface of substrate can be caused impaired.Third, covering that shady mask is impaired can be caused by with substrate contact.The Four, once releasing and substrate contact, then residue, which can stay in, covers on shady mask surface.Then, frequent cleans is needed to cover shady mask, This increases process time and totle drilling cost, while being also possible to be damaged mask during clean operation.Therefore, the prior art covers shade Masked-deposition has generally been limited to the non-contact configuration with significantly negatively affecting of wherein sprouting wings.5th, routinely cover shady mask It is usually to be made of metal and therefore inevitable relatively thicker.Thickness covers shady mask leads to covering in each pore region when with substrate contact Shade, this leads to the edge thinning of deposition characteristics.It covers shady mask for thicker and (such as is commonly used for and in the prior art cover shade and cover Mould), more materials are depleted because of the wall of hole and the edge thinning of sub-pixel.

However, the present invention realizes Direct precipitation in the case where overcoming some disadvantages of the prior art.Of the invention first Aspect is: can cover shady mask by the vaporization atom arrival for only allowing the direction along the surface for being approximately perpendicular to substrate to propagate to show Write reduce sprout wings, enable whereby the pattern of deposition materials have relative to the pattern of apertures for covering shady mask high-resolution and Fidelity.

Another aspect of the present invention is: being used to cover shady mask for the nonmetallic materials of such as silicon nitride and allows it to as pole Thin (≤1 micron), cause whereby than the prior art cover that shady mask substantially reduces cover shade.

Another aspect of the present invention is: can by using be set size and arrangement to offset the gravity for covering shady mask Cover shady mask chuck reduce or eliminate cover shady mask gravity be led to it is sagging.

Another aspect of the present invention is: substrate and covering shady mask chuck and does not have and protrude past substrate and cover the top of shady mask The structure in face realize substrate with cover minimum spacing between shady mask or even contact, mitigate sprout wings whereby.Substrate/cover shady mask Contact can also increase its stability during deposition, improve stock utilization by reducing waste, realize very fast deposition and Higher flux, and realize compared with low temperature depositing.

Fig. 2 describes the main feature of the direct patterned deposition system of high accurancy and precision of illustrative embodiments according to the present invention Cross section schematic diagram.System 200 includes vacuum chamber 202, substrate chuck 204, source 104, covers shady mask 106, mask chuck 206, collimator 208 and positioning system 212.System 200 can operate with by wanted patterns of material vapor deposition on substrate surface and nothing Need the subsequent abatement patterning operations of such as photoetching and etching.

It is relevant to herein using luminescent material pattern deposition in (it is as the portion of manufacture displayer in glass substrate Point) system 200 described.However, those skilled in the art should be clear after reading this description, the present invention can be directed to In any various substrates (such as semiconductor substrate (such as silicon, silicon carbide, germanium etc.), ceramic substrate, metal substrate, plastic lining Bottom) on form the direct patterned layer of actually any film and thick-film material (organic or inorganic).In addition, to the greatest extent Pipe illustrative embodiments is hot evaporation system, but those skilled in the art should recognize after reading this description, this Invention can be for actually any material deposition process, such as electron beam evaporation plating, sputter.In addition, although being retouched The example drawn is the depositing system suitable for single substrate plane treatment, but the present invention is suitable also for other manufacturing methods, example Such as cluster tools processing, tracking process, scroll bar type processing, coil type processing.Therefore, the present invention is answered suitable for various With it includes (but being not limited to) package application, IC manufacture, MEMS manufacture, nanotechnological devices manufacture, ball grid array (BGA) systems Make and so on.

In the illustrated case, covering shady mask 106 and being includes disposing the high accurancy and precision of substrate 224 and film 226 to cover shade and cover Mould is suspended on the central opening being formed in disposition substrate.Film 226 includes through-hole pattern 228.Covering shady mask 106 includes Two main surfaces: front surface 230 and rear surface 232.Front surface 230 is the top surface of film 226 (that is, the film far from disposition substrate 224 Surface), define plane 118.Rear surface 232 is to dispose the surface (that is, substrate surface far from film 226) of substrate 224.It should infuse Meaning, although covering shady mask 106 is that the high accurancy and precision based on film covers shady mask, mask chuck according to the present invention can be used to consolidate It holds and virtually any type of covers shady mask.Preferably, film 226 includes silicon nitride；However, can be without departing substantially from the scope of the present invention In the case where use other materials.Preferably, film 226 has the thickness less than or equal to one micron；However, can be without departing substantially from this hair The film of other thickness is used in the case where bright range.

As discussed above, with the prior art cover shady mask compared with, by using with one micron or smaller thickness Shady effect is covered during covering shady mask film and can reducing Direct precipitation.

Vacuum chamber 202 is for accommodating the traditional pressure vessel for making material 116 vaporize required environment under low pressure.Described Example in, vacuum chamber 110 is separate unit；However, also it can be become without departing substantially from the scope of the present invention The part of middle the gather together depositing system or tracking depositing system that multiple deposited chambers are arranged to linear chain.In some embodiments, Vacuum chamber 110 include can be formed on substrate 102 different materials different pattern (such as (for example) transmitting different color (example Such as red, green and blue) light multiple light emitting sub-pixels) several evaporation sources/cover shady mask combination.

Controller 240 is that control signal 236 and 238 is especially provided respectively to substrate chuck 204 and mask chuck 206 Conventional instrument controller.

Fig. 3 describes the behaviour of the method for being deposited on direct patterned material layer on substrate according to illustrative embodiments Make.Method is described with continued reference to Fig. 2 and with reference to Fig. 4 A to B, 5,6A to B, 7A to B, 8A to B, 9,10 and 11A to C herein 300.Method 300 starts from operation 301, wherein collimator 208 is installed in collimator chuck 210.

Collimator 208 is to include by the mechanically robust plate in multiple channels of thin-walled separation, as follows to arrive relative to Figure 11 A C is described in more detail.Collimator 208 is set size and arrangement for use as spatial filter, and edge is selectively made almost to hang down Directly pass through in the vaporization atom (that is, vaporization atom with very small angle of propagation) that the direction of plane 108 is propagated.Therefore, it collimates Device 202 mitigates the emergence across entire substrate 102.

Collimator chuck 210 is for relative to the annular clamp system for covering the shady fixing of mask 106 and positioning collimator.

In operation 302, shady mask 106 will be covered to be installed in mask chuck 206.

Mask chuck 206 is that the fixture for covering shady mask 106 is held via the suction for only bestowing its rear surface.Described Example in, mask chuck 206 is held using electrostatic force covers shady mask 106.In some embodiments, mask chuck 206 passes through Shady mask is covered by the different suction that such as vacuum generates power, magnetic force etc. to hold.In other embodiments, mask chuck 206 It is mechanical folder.

Fig. 4 A to B describes the schematic diagram of top view and cross-sectional view according to the mask chuck of illustrative embodiments respectively. Discribed cross section is that the line a-a shown in Fig. 4 A is intercepted in Fig. 4 B.Mask chuck 206 includes bracket 402, electricity Pole 404-1 and 404-2 and pad 406.

Bracket 402 is the structural rigidity annulus of electrically insulating material.Bracket 402 around opening 408, opening 408 it is sufficiently large with The entire through-hole pattern 228 of exposure.In some embodiments, bracket 402 has such as square, rectangle, irregular shape etc. Non-circular shape.In some embodiments, bracket 402 includes the conductive material coated with electrical insulator.

Electrode 404-1 and 404-2 are formed at the conducting element on the surface of bracket 402.Electrode 404-1 and 404-2 with Controller 240 is electrically coupled.

Pad 406 is the structural rigidity plate for the electrically insulating material being placed on electrode 404-1 and 404-2.It is each in pad 406 Person includes mounting surface 410, when that will cover shady mask 106 and be installed in mask chuck, covers shady mask 106 and is close to mounting surface 410。

Shady mask 106, which will be covered, by the electrostatic force bestowed between mounting surface 410 and rear surface 232 is immobilizated in mask card In disk 206.Electrostatic force is generated in response to the voltage potential between electrode 404-1 and 404-2, and the voltage potential is believed by control Numbers 238 generate.When contacting rear surface 232 and mounting surface 410, sympathetic charge area develops in disposition substrate 224, such as It is shown in figure.Therefore, electrostatic force is selectively bestowed between rear surface 232 and mounting surface 410.

In general, covering shady mask 106 only around the perimeter support for covering shady mask 106.Therefore, in the prior art to cover shady mask It is intended in sagging under the effect of gravity.In some embodiments, mask chuck according to the present invention includes one or more features, It is mitigated or eliminated the gravity that covers shady mask of installation when covering shady mask be led to it is sagging.As being discussed in detail above, shade is covered Mask be attributable to its own quality and gravity and a few micrometers of middle cardioptosia.This gravity be led to it is sagging cause aggravation sprout wings Several significant problems.Firstly, the spacing covered between shady mask and substrate in its center for increasing deposition region, deposition region are logical It is often centrally located on and covers on shady mask.As discussed above, sprout wings and increase with substrate/cover shady mask spacing.Secondly, it causes Substrate and the non-homogeneous spacing between shady mask is covered, this leads to the variation of the emergence degree occurred across substrate surface.Even if non-homogeneous Property can not compensate and sprout wings via innovation mask layout, but can be very difficult.

Another aspect of the present invention is: mask chuck may include mitigating to cover the gravity of shady mask and be led to sagging feature.

In some embodiments, mask chuck 206 includes and makes to cover shady mask to upwardly bias to offset and be attributed to covering for gravity The sagging slight curvature of shady mask (such as upward gradient).In some embodiments, fine support construction can across mask chuck 206 In opening extend with support mask and reduce gravity sag.It will be hereafter described in more detail relative to Fig. 6 A to B and Fig. 7 A to B These features.

Fig. 6 A to B describes the signal of the cross-sectional view of the part of the mask chuck of the first alternate embodiment according to the present invention Figure.Discribed cross section is that the line a-a shown in Fig. 4 A is intercepted in Fig. 6 A.Mask chuck 600 includes bracket 402, electrode 404-1 and 404-2 and pad 702.

Pad 602 is similar to that described above pad 406；However, each pad 602 has and is designed to be led to or increase and covers shade The mounting surface for covering the elongation strain in shady mask when mask is installed in mask chuck.Pad 602 has from inward flange 606 (that is, close to edge of opening 408) arrives the mounting surface 604 of the downward linear taper of outer edge 608.In other words, table is installed Face 604 in negative z direction from point 614 to point 616 (that is, from plane 610 with the plotted point of inward flange 606 in plane 612 The plotted point at place and outer edge 608) possibly tapered, as show in the figure.Therefore, in wherein inward flange 606 perpendicular to plane 610 In embodiment, inward flange 606 and mounting surface 604 form interior angle θ, so that it is acute angle.

When that will cover shady mask 106 and be immobilizated in mask chuck 600, rear surface 232 is attracted to mounting surface 604, is borrowed This, which is led to, covers shady mask flexure, increases the lateral steering tension in the front surface 230 for covering shady mask.Therefore, film is drawn more Tight and gravity is led to sagging be reduced or eliminated.

Fig. 6 B describes the schematic diagram of the cross-sectional view of the part of the mask chuck of the second alternate embodiment according to the present invention. Discribed cross section is that the line a-a shown in Fig. 4 A is intercepted in Fig. 6 B.Mask chuck 618 includes bracket 402, electricity Pole 404-1 and 404-2 and pad 720.

Pad 620 is similar to that described above pad 406；However, each pad 620, which has, to be designed to be led to such as pad 602 Or increase the mounting surface for covering the elongation strain in shady mask covered when shady mask is installed in mask chuck.Pad 620 have from Inward flange 606 arrives the curved mounting surface 622 downwards (that is, in negative z direction, as show in the figure) of outer edge 608.In other words Say, mounting surface 622 in negative z direction from point 614 to 616 possibly tapered are put, as show in the figure.

When that will cover shady mask 106 and be immobilizated in mask chuck 618, rear surface 232 is attracted to mounting surface 622, is borrowed This, which is led to, covers shady mask flexure, increases the lateral steering tension in the front surface 230 for covering shady mask.Therefore, film is drawn more Tight and gravity is led to sagging be reduced or eliminated.In some embodiments, electrode 404-1 and 404-2 can be applied to by control The magnitude of voltage difference control the additional tension amount being led in front surface 230.

Those skilled in the art should be clear after reading this description, for wherein overturning installation mask (with Fig. 1 In its discribed orientation compare) depositing system, the direction of the inclination of mounting surface 604 and 622 (or bending) will be reversed.This Outside, in this configuration, it usually needs substrate chuck 204 is enable to be designed to reside at substrate 102 in opening 408 so that lining Bottom/cover shady mask spacing less than or equal to 10 microns.

Fig. 7 A to B describes the top view and cross-sectional view of the mask chuck of third alternate embodiment according to the present invention respectively Schematic diagram.Mask chuck 700 includes mask chuck 206 and support grid 702.

Support grid 702 includes plate 704 and ribs 706.

Plate 704 is the rigid plate extending therefrom of ribs 706.In some embodiments, plate 704 and ribs 706 be by Solid structure material is process.Suitable for the material in plate 704 and ribs 706 including (but not limited to) metal, plastics, Ceramics, composite material, glass and so on.Plate 704 is designed to be installed to bracket 402 so that support grid 702 to be positioned at In opening 408, so that its machinery twelve Earthly Branches when covering shady mask 106 and being installed in mask chuck 700 supports film 226.

Ribs 706 are arranged to support in the region between the through-hole for being located at through-hole arrangement 228 and cover shady mask 106. In general, the through-hole for covering shady mask is arranged to correspond to gathering together for the different die areas on substrate.Since these die areas are logical It is often separated by " drawing lines " wishing to remove by cast-cutting saw, so ribs 706 are preferably arranged to match these drawing lines Arrangement.However, it should be noted that any suitable arrangement of ribs can be used in support grid 702.

Support grid 702 is formed such that its top surface 708 is coplanar and defines plane 710.Plane 710 is located at installation table At the distance of the thickness equal to bracket 224 of 410 top of face.Therefore, when bracket 224 and mounting surface 410 contact, ribs 706 contact with film 226.

In some embodiments, shady mask 106 will be covered reversedly to be immobilizated in mask chuck 700, so that film 226 and installation Surface 410 contacts.In such embodiments, support grid 702 is designed to be assemblied in opening 408, so that plane 710 and peace It is coplanar to fill surface 410.Therefore, film 226 is supported by support grid 702, so that it is fully horizontal always in entire opening 408.

In operation 303, substrate 102 is installed in substrate chuck 204.

Substrate chuck 204 is the platen for carrying out holding substrate 102 via the suction for being applied only to its rear surface.It is being retouched In the example drawn, substrate chuck 204 generates electrostatic force with holding substrate, however, in some embodiments, substrate chuck 204 passes through The different suction of power, magnetic force etc. are generated come holding substrate by such as vacuum.In order to which (it includes appended claims for this specification Book), term " magnetic force " includes as using any power caused by permanent magnet and/or electromagnet.It will hereafter come relative to Fig. 8 A to B Substrate chuck 204 is described in more detail.

In some embodiments, substrate chuck 204 is set size and arrangement only from front surface contact substrate 102 to subtract The gently interference to being deposited on material on the other side of substrate.In some embodiments, substrate chuck 204 is passed through from the two sides of substrate Substrate, etc. is fixed by the different component of such as vacuum machine folder.In some embodiments, substrate chuck 204 includes in situ Gap sensor, operated together with positioning system 212 with control substrate 102 with cover spacing between shady mask 106 and parallel Degree.

In the illustrated case, substrate 102 is shown suitable for active-matrix Organic Light Emitting Diode (AMOLED) Glass substrate in device.Substrate 102 includes two main surfaces for defining display element thereon: rear surface 115 and front surface 114. Front surface 114 defines plane 108.

Fig. 8 A describes the schematic diagram of the cross-sectional view of the substrate chuck according to illustrative embodiments.Substrate chuck 204 includes Platen 802 and electrode 804-1 and 804-2.

Platen 802 is the structural rigidity platform for including substrate 806 and dielectric layer 808.Substrate 806 and dielectric layer 808 Each of including, for example, glass, ceramics, anodised aluminium, composite material, bakelite and so on electrically insulating material with Keep electrode 804-1 and 804-2 electrically isolated from one and make when substrate to be installed in substrate chuck electrode 804-1 and 804-2 with Substrate 102 is electrically isolated.

Electrode 804-1 and 804-2 are conducting elements, are formed on the surface of substrate 806 and are covered by dielectric layer 808 To be embedded into platen 802.Electrode 804-1 and 804-2 is electrically coupled with controller 240.Although should be noted that electrode 804-1 and 804-2 is depicted as simple plales, but substrate chuck 204 can actually have the electrode of moulding in any way, such as finger-fork type Comb refers to, concentric ring, irregular shape etc..

Dielectric layer 808 is to be placed in the structural rigidity glass that mounting surface 810 is generated on electrode 804-1 and 804-2 Layer.

For substrate 102 to be immobilizated in substrate chuck 204, control signal 236 generates between electrode 804-1 and 804-2 Voltage potential.When making rear surface 115 and mounting surface 810 (that is, top surface of dielectric layer 808) contacts, sympathetic charge area Develop in substrate 102, as show in the figure.Therefore, electrostatic force is selectively bestowed to rear surface 115, whereby by rear surface 115 are attracted to mounting surface 610.

Although illustrative embodiments includes to come the substrate chuck of holding substrate 102, the skill of fields via electrostatic force Art personnel should be clear how to specify after reading this description, manufacture and use alternate embodiment, wherein via such as vacuum Generate power, magnetic force and so on the suction of non-electrostatic force substrate is immobilizated in substrate chuck.

In operation 304, substrate 102, source 104, the phase for covering shady mask 106 and collimator 208 are controlled by positioning system 212 To position.

Positioning system 212 makes substrate 102 by controlling the position of substrate chuck 204 and covers the shady alignment of mask 106.One In a little embodiments, positioning system to make substrate and covers shady mask registration by controlling the position of mask chuck 206.In some implementations In example, the position of two chucks is controlled to make substrate and cover shady mask registration.It hereafter will be relative to Fig. 1,2,9,10 and 11A to C Operation 304 and positioning system 212 is described in more detail.

Positioning system is comprising three six axis executors and for controlling substrate 102 and covering the alignment between shady mask 106 Optical alignment system.Each of six axis executors in substrate chuck 204, mask chuck 206 and collimator chuck 210 Each is operably connected to control it along the position of each of x-axis, y-axis and z-axis and in x-axis, y-axis and z-axis Each rotation.In some embodiments, the position to few one in mask chuck 206 and collimator chuck 210 is not It is to be controlled by six axis positioners.In some embodiments, positioning system 212 is also comprising for controlling substrate 102 and covering shady mask The turntable of 106 relative rotation alignment.

In operation 304, positioning system 212 positions substrate and covers shady mask, so that the deposition site in deposition region 216 R is aligned with hole 120, plane 108 and 118 parallel, and substrate and covers distance s between shady mask close in zero (that is, contact), it is preferable that in a few micrometers (such as 1 to 5 microns).In some embodiments, s is another suitable spacing.It should infuse Meaning, for clarity, distance s are specially amplified description.

Aspect of the invention is: in some embodiments, both substrate chuck 204 and mask chuck 206, which do not include, to be protruded Any structural detail of mounting surface corresponding more than its.Therefore, substrate and cover shady mask can distance very little or each other continuously It is aligned away from ground to mitigate the emergence during deposition.Those skilled in the art should be understood that in conventional Direct precipitation system, Substrate and the spacing covered between shady mask are necessary for minority ten or even hundreds of microns.

When substrate and when covering shady mask registration, the region 902 between it is defined jointly.Region 902, which has, is equal to preceding table The lateral extent L1 of the lateral extent in face 114.Region 902 also has the distance s 1 being equal between plane 108 and 118 (that is, substrate With cover the spacing between shady mask) thickness.

Entered in region 902 because substrate chuck 204 extends beyond plane 108 without any part, substrate with Cover clear between shady mask.Therefore, substrate 102 and cover distance s 1 between shady mask 106 can for minimum (≤10 is micro- Rice).In fact, if desired, can so make substrate and cover shady mask to be in contact with each other.Be equal in the shady mask spacing of substrate/cover or Directly patterned ability is executed in the case where less than 10 microns makes the embodiment of the present invention be significantly better than the direct of the prior art Patterned deposition system, this is because it can substantially reduce or even be eliminated emergence.In some embodiments, substrate and shade is covered Between mask without spacing or gap be zero with completely eliminate sprout wings.

In operation 305, source 104 generates steam plumage 124.As above in relation to described by Fig. 1, the vaporization of steam plumage 124 The relatively large angular region of the propagation angle theta p leap-θ m to+θ m of atom.In the prior art, this big angular region aggravation is sprouted wings, plumage Change according to substrate 102 and covers transverse direction and rotary alignment between shady mask 106, substrate 102 and cover the spacing between shady mask 106 It s and is incident in the range for covering the propagation angle theta p of the atom of the vaporization on shady mask and changes.

However, in the present invention, by being positioned at spatial filter (that is, collimator 208) from source 104 to covering shady mask Reduce the range for reaching the angle of propagation of vaporization atom of substrate surface in 106 vaporization atom path.Therefore, in system 200 In comprising collimator 208 substantially reduce Direct precipitation during emergence.

Figure 10 describes the pixel region 112 of substrate 102 and covers showing for its enlarged drawing for corresponding to hole 120 of shady mask 106 It is intended to.As show in the figure, for the high fidelity between the deposition of the material on hole 120 and deposition site R, by covering shade The angle of propagation of the vaporization atom of mask 106 must be in the tolerance interval of-θ a to+θ a.In order to which (it includes appended for this specification Claims), it is defined as term " acceptable angular region " to be expected that by the range for the angle of propagation for covering shady mask, cross over From the angular region of-θ a to+θ a.In general, acceptable angular region is that material 116 is enable only to be deposited on after through hole 120 Angular region on deposition site R.In some embodiments, being subjected to angular region includes the small buffer zone around deposition site to permit Perhaps it is less than the emergence of the half of the spacing between nearest deposition site.Being incident in the angle of propagation outside this range covers shady mask On any vaporization atom will be deposited on beyond deposition site R lateral extent surface 114 on.

In operation 306, steam plumage 124 is filtered to generate steam plume 214 by collimator 208.

Figure 11 A describes the schematic diagram of the cross-sectional view of the collimator according to illustrative embodiments.Collimator 208 includes through scheming For case to form the main body 1102 in multiple channels 1104, each of multiple channels 1104 extend through the thickness of main body 1102 Degree.

Main body 1102 is adapted for the glass plate of plane treatment.In the illustrated case, main body 1102 has about 25 millimeters (mm) thickness；However, any practical thickness can be used without departing substantially from the scope of the present invention.In some embodiments In, main body 1102 include suitable for bear with heat and/or the associated temperature of electron beam evaporation plating and will not significantly deform it is different tie Structure rigid material.Suitable for the material in main body 1102 including (but not limited to) semiconductor (such as silicon, silicon carbide etc.), pottery Porcelain (such as aluminium oxide etc.), composite material (such as carbon fiber etc.), glass fibre, printed circuit board, metal, polymer (such as polyether-ether-ketone (PEEK) etc.) and so on.

Channel 1104 be using conventional treatment operation (such as metal forming, drilling, electron discharge processing, deep reactivity from Son etching (DRIE)) come the through-hole that is formed in main body 1102.In the illustrated case, channel 1104 has Circular cross section, the diameter with about 3mm.Therefore, the wide aspect ratio of height of the channel 1104 with about 8:1.Preferably, height is indulged It is horizontal than to it is few be equal to 3:1.In addition, for be more than 100:1 the wide aspect ratio of height, start to reduce by the vaporization atomic current of collimator To non-wanted level；However, the wide aspect ratio of height for being more than 100:1 is within the scope of the invention.In some embodiments, channel 1104 have non-circular transverse cross-section (such as square, rectangle, hexagon, octagon, irregular shape etc.).

The formation in channel 1104 generates the multiple walls 1106 resided between channel.Preferably, high-throughput to realize, wall 1106 will structural intergrity that is thin as much as possible and not sacrificing main body 1102.In the illustrated case, wall 506 has about 500 The average thickness of micron；However, any practical thickness can be used in wall 1106.

Figure 11 B to C describes the top view in the region of collimator 208 and the schematic diagram of sectional view respectively.Channel 1106 is arranged It is arranged at honeycomb, wherein column are periodic and adjacent column is from its neighbor's offset half period.In some embodiments, lead to Road is arranged to the different arrangements that such as two-dimension periodic, six sides are tightly packed, random and so on.

As described in Figure 11 C, the aspect ratio in channel 1104 defines filtering angular region.In order to which (it includes institutes for this specification Attached claims), by term " filtering angular region " be defined as will by the range of the angle of propagation of collimator 208, across from- The angular region of θ c to+θ c.Therefore, have and be greater than | θ c | the vaporization atom of angle of propagation collimated device is stopped.

Those skilled in the art should be understood that above with respect to provided by main body 1102, channel 1104 and wall 1106 Size can use other sizes only for explanation without departing substantially from the scope of the present invention.

In operation 307, hole 120 passes through the vaporization atom of steam plume 214, so that it is deposited on deposition region 216 In deposition site R on.

In optional operation 308, movement is bestowed collimator 208 to improve vaporization atomic density across steaming by positioning system 212 The uniformity of the lateral extent of vapour column 214 improves the deposition uniformity across the deposition site on substrate 102 whereby.In some realities It applies in example, positioning system 212 can be operated so that collimator 208 is bestowed in oscillating movement.

It should be noted that in an illustrative embodiment, the point source of the substantially material 116 of source 104, this is because its crucible is spacious Open area of the area significantly less than substrate 102.

In optional operation 309, positioning system 212 is equal to improve deposition relative to substrate moving source 102 in an x-y plane Even property.

In some embodiments, source 104 is linear evaporation source comprising transmitting vaporizes the multiple of the fan-shaped steam plumage of atom Nozzle.In some embodiments, positioning system 212 in an x-y plane along the direction that is not aligned with its longitudinal axis move linear sources with Improve the uniformity of the deposition materials on substrate 102.In some embodiments, this path is be generally orthogonal to nozzle linear The route of 110 the two of arrangement and vertical axis.In some embodiments, linear sources are moved along nonlinear path in an x-y plane.

In some embodiments, source 104 includes the two-dimensional arrangement of nozzle, and each nozzle emits taper steam plumage, so that more A nozzle provides the substantial uniform vaporization atomic current on the region of substrate surface jointly.In some embodiments, positioning system The two-dimensional arrangement of 212 moving nozzles is to promote deposition uniformity.In some embodiments, the two-dimensional arrangement of nozzle is revolved in the planes Turn to promote deposition uniformity.

In some embodiments, source 104 is two-dimensional surface source, and it includes the material layers 116 being distributed across its top surface.Source is through cloth It sets so that this top surface is parallel to and towards substrate 102.Material 116 across uniform plane is vaporized when being heated.Virgin (Tung) etc. People " is manufacturing (OLED Fabrication by Using a Novel by using the OLED of novel flat evaporation technique Planar Evaporation Technique) " (Int.J.of Photoenergy, the 2014th (18) volume, page 1 to page 8 (2014)) it discloses in (it is incorporated herein by reference) and is steamed suitable for the exemplary planar in the embodiment of the present invention Plating source.

In some embodiments, it to improve uniformity when material 116 is deposited on the 2 dimensional region on surface 114, positions System 212 is by come the source of bestowing 104 and substrate 102 and covering shady mask 106 to few one in mobile substrate/mask combination and source Combination between relative motion.

It should be understood that the present invention is only taught according to some embodiments of the present invention, and those skilled in the art can read Many variations of the invention are easy to imagine that after reader invention, and the scope of the present invention will be determined by the appended claims.

Claims

1. a kind of system for the first material to be deposited on multiple deposition sites in the deposition region of substrate, the multiple Deposition site is arranged to the first arrangement, wherein the substrate includes the first main surface and the second main table including the deposition region Face, the system comprises:

Source is used to provide the described the more vaporization atoms of the first of the first material, each in more than described first vaporization atom Person propagates along the direction of propagation, and the direction of propagation is relative to the first direction perpendicular to the first plane defined by the substrate Angle of propagation be characterized, wherein more than described first the angle of propagation of vaporization atom the first angular region of range spans；

Cover shady mask comprising be arranged to multiple through-holes of first arrangement, to cover shady mask include the main table of third wherein described Face and the 4th main surface including the through-hole；

First chuck, is used to hold the substrate, and first chuck is set size and arrangement to select the first suction Bestow first main surface to property；

Second chuck, be used to hold it is described cover shady mask, second chuck includes bracket, and the support ring is around making the material Material can be set size and arrangement by the first opening of second chuck to the through-hole, second chuck to incite somebody to action Second suction selectively bestows the third main surface；

Collimator comprising multiple channels, the collimator between the source and it is described cover between shady mask, wherein the multiple Each of channel is set size and arrangement only to make with the biography in the second angular region less than first angular region The vaporization atom for broadcasting angle passes through；And

Positioning system, be used to control the relative position of first chuck and second chuck so that it is described cover shady mask and The substrate alignment.

2. system according to claim 1, wherein first material is organic material.

3. system according to claim 2, wherein first material can be operated to emit the organic material of light.

4. system according to claim 1, wherein the multiple deposition site and the multiple through-hole are defined jointly and can be connect By angular region, and wherein, second angular region is less than or equal to the acceptable angular region.

5. system according to claim 1, wherein each of the multiple channel is to be equal to or greater than about the height of 3:1 Wide aspect ratio is characterized.

6. system according to claim 1, wherein each of the multiple channel is wide with the height equal to or more than 8:1 Aspect ratio is characterized.

7. system according to claim 1, wherein the positioning system can be operated to bestow the substrate and the collimation Relative motion between device.

8. system according to claim 1, wherein first chuck, second chuck and the positioning system are common Realize the substrate and the substrate covered when there is spacing less than or equal to about 10 microns between shady mask and described Cover the alignment of shady mask.

9. system according to claim 8, wherein first chuck, second chuck and described common to Barebone Realize the substrate and it is described cover between shady mask have greater than 0 micron and when spacing less than or equal to about 10 microns described in Substrate and the alignment for covering shady mask.

10. system according to claim 1, wherein first chuck, second chuck and described total to Barebone With lining when realizing the substrate and the spacing covered in the range of there are about 2 microns to about 5 microns between shady mask Bottom and the alignment for covering shady mask.

11. system according to claim 1, wherein second suction is electrostatic force.

12. system according to claim 1, wherein second suction is selected from generating power by vacuum and magnetic force forms Group.

13. system according to claim 1, wherein second chuck is set size and arrangement to mitigate and described cover shade The gravity of mask is led to sagging.

14. system according to claim 13, wherein the bracket has cross section, the cross section is defined to extend and be connect Mounting surface between the first edge of nearly first opening and the second edge far from first opening, covers when by described When shady mask is immobilizated in second chuck, the mounting surface is contacted with the third main surface, wherein the installation table At face and the first edge intersect in this first plane and the mounting surface and the second edge are in the second plane Centre-exchange-meeting in Dian Chu, and wherein when it is described cover shady mask and the substrate and be aligned when, first plane is than second plane Closer to the substrate.

15. system according to claim 14, wherein the mounting surface is nonlinear.

16. system according to claim 1, wherein second chuck further includes the support in first opening Grid, the support grid be set size and arrangement with mitigate the gravity for covering shady mask be led to it is sagging.

17. system according to claim 1, wherein each of first suction and second suction are electrostatic Power.

18. system according to claim 1, wherein described, to cover shady mask include silicon nitride.

19. system according to claim 1, wherein described cover shady mask with the thickness less than or equal to 1 micron.

20. a kind of system for the first material to be deposited on multiple deposition sites in the deposition region of substrate, described more A deposition site is arranged to the first arrangement, wherein the substrate includes the first main surface and the second master with the first lateral extent Surface, the system comprises:

Source can be operated with more than first vaporization atoms of offer, and biography is defined on each of more than described first vaporization atom edge The direction of propagation for broadcasting angle is advanced, so that more than described first vaporization atom is with more than first a angle of propagation across the first angular region Feature；

Cover shady mask comprising be arranged to multiple through-holes of first arrangement, to cover shady mask include the main table of third wherein described Face and the 4th main surface including the through-hole cover shady mask and the multiple deposition site is defined jointly less than institute wherein described State the acceptable angular region of the first angular region；

First chuck is used to hold the substrate；

Second chuck, be used to hold it is described cover shady mask, second chuck includes bracket, and the support ring is around making the material Material can pass through the first opening of second chuck to the through-hole；

Wherein when it is described cover shady mask and the substrate and be aligned when, it is described to cover shady mask and the substrate defines the firstth area jointly Domain, the first area (1) have the second lateral extent equal to or more than first lateral extent, and (2), which have, is equal to institute Substrate and the thickness for covering the spacing between shady mask are stated, and (3) do not include first chuck and second chuck；

Wherein first chuck and the second chuck are set size and arrangement so that the thickness can be less than 10 microns；And

Collimator, be positioned at the source and it is described cover between shady mask, the collimator includes selectively making more than second Multiple channels that vaporization atom passes through, more than described first vaporization atom includes more than described second vaporization atoms, wherein described Each of multiple channels have the wide aspect ratio of the height for defining the filtering angular region less than or equal to the acceptable angular region, And wherein characterized by more than described second more than the second a angle of propagation for vaporizing atom to be less than or equal to the filtering angular region.

21. system according to claim 20, wherein the substrate defines the first plane and perpendicular to first plane First direction, and wherein the source include for emit it is the multiple vaporization atom multiple nozzles, the multiple nozzle cloth It is set to the second arrangement, described second is arranged in the second generally parallel with first plane plane in a second direction The first length, and wherein the source can move in second plane along path, the path not with the second direction Alignment.

22. system according to claim 20, wherein the deposition region has the first area in first plane, And wherein the source include for emit it is the multiple vaporization atom first jet, and wherein the source can generally with institute It states and is moved in the second parallel plane of the first plane.

23. system according to claim 20 further comprises positioning system, the positioning system can be operated to bestow Relative motion between the collimator and the substrate.

24. system according to claim 20, wherein first chuck and second chuck are set size and cloth It sets so that the thickness can be zero micron, so that the substrate and described to cover shady mask be contact.

25. system according to claim 20, wherein first chuck and second chuck are set size and cloth It sets so that the thickness can be greater than 0 micron and be equal to or less than 10 microns.

26. system according to claim 20, wherein second chuck can operate it is described only to bestow the first suction Third main surface.

27. system according to claim 26, wherein first suction is electrostatic force.

28. system according to claim 26, wherein first suction is to be selected to be made of vacuum generation power and magnetic force Group.

29. system according to claim 26, wherein first chuck can operate it is described only to bestow the second suction First main surface.

30. system according to claim 29, wherein each of first suction and second suction are quiet Electric power.

31. system according to claim 20, wherein second chuck is set size and arrangement to mitigate described the Two gravity for covering shady mask for covering when shady mask is immobilizated in second chuck are led to sagging.

32. system according to claim 31, wherein second chuck is set size and arrangement by being led to State the tensile stress in the 4th main surface mitigate the gravity be led to it is sagging.

33. system according to claim 31, wherein second chuck is set size and arrangement to influence described cover The curvature of shady mask.

34. system according to claim 31, wherein second chuck includes the branch being positioned in first opening Grid is supportted, and wherein the support grid is set size and arrangement physically to support and described cover shady mask.

35. system according to claim 20, wherein described, to cover shady mask include silicon nitride.

36. system according to claim 20, wherein described cover shady mask with the thickness less than or equal to 1 micron.

37. a kind of method for the first material to be deposited on the multiple deposition sites for being arranged to the first arrangement on substrate, Wherein the substrate includes the first main surface and the second main surface with the first lateral extent, and second main surface includes institute First area is stated, the method comprise the steps that

The shady mask that covers including multiple through-holes is provided, it is described to cover shady mask with third main surface and including the multiple through-hole 4th main surface；

The substrate is immobilizated in the first chuck, the first suction is selectively bestowed the described first main table by first chuck Face；

It covers shady mask by described and is immobilizated in the second chuck, the second suction is selectively bestowed the third by second chuck Main surface, wherein second chuck enables the vaporization atom of the material to lead to by second chuck to the multiple Hole；

Position the substrate and it is described cover shady mask so that second main surface and the 4th main surface interval are less than or wait In 10 microns of distance；

More than first vaporization atoms are received being located at source and the collimator covered between shady mask, wherein more than described first Atom is vaporized characterized by first propagates angular region；

Shady mask is covered described in by the collimator with making more than second vaporization atoms, wherein more than described first Vaporizing atom includes more than described second vaporization atoms, and wherein more than described second vaporization atom is propagated with being narrower than described first Second propagation angular region of angular region is characterized；And

Enable to pass through second chuck and the multiple through-hole to few several persons in more than described second vaporization atom It is deposited on the substrate.

38. according to the method for claim 37, further comprising: the collimator is provided, so that the collimator packet Containing multiple channels, each of the multiple channel, which has, determines the described second wide aspect ratio of height for propagating angular region.

39. described to connect according to the method for claim 38, wherein the high wide aspect ratio is to be based on acceptable angular region It by the substrate and described covered shady mask by angular region and defined.

40. according to the method for claim 39, wherein the high wide aspect ratio is defined less than or equal to the acceptable angle The filtering angular region of range.

41. the method according to claim 11, further comprising:

More than first vaporizations atom is generated at source；And

Relative to the mobile source of the substrate.

42. according to the method for claim 41, further comprising: providing linear arrangement of the source as nozzle.

43. according to the method for claim 41, further comprising: providing two-dimensional arrangement of the source as nozzle.

44. according to the method for claim 37, further comprising: bestowing the phase between the collimator and the substrate To movement.

45. according to the method for claim 37, wherein the substrate and described covering shady mask and being aligned so that described second Main surface and the 4th main surface interval are greater than 0 micron and are less than or equal to 10 microns of distance.

46. according to the method for claim 37, wherein the substrate and described covering shady mask and being aligned so that described second Distance in the range of about 2 microns to about 5 microns of main surface and the 4th main surface interval.

47. according to the method for claim 37, further comprising: generating second suction as electrostatic force.

48. according to the method for claim 47, further comprising: generating first suction as electrostatic force.

49. according to the method for claim 37, further comprising: mitigate described in cover shady mask gravity be led to it is sagging.

50. according to the method for claim 49, wherein being mitigated by the elongation strain being led in the 4th main surface The gravity is led to sagging.

51. according to the method for claim 50, wherein being led to the described 4th by covering the curvature of shady mask described in influence The elongation strain in main surface.

52. according to the method for claim 49, wherein by the region comprising covering shady mask described in the through-hole Mechanically support described in cover shady mask mitigate the gravity be led to it is sagging.

53. method according to claim 52, further comprising: second chuck is provided, so that second card Disk includes:

Bracket surround and is operable such that the particle including the material can be by second chuck to the through-hole First opening；And

Support grid is positioned in first opening, wherein the support grid is set size and arrangement with physically Shady mask is covered described in support.

54. the system according to claim 37, wherein described, to cover shady mask include silicon nitride.

55. the system according to claim 37, wherein described cover shady mask with the thickness less than or equal to 1 micron.