CN109639245A - Unit amplifier - Google Patents
Unit amplifier Download PDFInfo
- Publication number
- CN109639245A CN109639245A CN201811513376.7A CN201811513376A CN109639245A CN 109639245 A CN109639245 A CN 109639245A CN 201811513376 A CN201811513376 A CN 201811513376A CN 109639245 A CN109639245 A CN 109639245A
- Authority
- CN
- China
- Prior art keywords
- source module
- current source
- amplifier
- transistor
- bipolar junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The present invention relates to technical field of semiconductors, the present invention is to solve the problems that the noiseproof feature of the existing amplifier based on CMOS transistor is poor, it is proposed a kind of unit amplifier, including first order amplifier, second level amplifier and current source module, the second level amplifier is CMOS transistor, the connection of the input terminal of the current source module and post-amplifier, the first order amplifier is bipolar junction transistor, the current source module includes above setting current source module and underlying current source module, current source module is set on described to connect with the input terminal of the collector of bipolar transistor and second level amplifier respectively, the connection of the emitter of the underlying current source module and bipolar junction transistor.The mode that entire amplifier forms bipolar junction transistor and CMOS transistor hybrid working reduces noise for the amplifier individually based on COMS transistor.
Description
Technical field
The present invention relates to semiconductor fields, relate in particular to a kind of amplifier.
Background technique
Amplifier is the voltage of input signal or the device of power amplification to be become by electron tube or transistor, power supply
Depressor and other electric elements form, amplifier be widely used in communicate, broadcast, radar, TV and automatic control etc. it is relevant
In device, it is the critical elements that signal is handled in automation equipment.
Existing amplifier generally uses following methods to realize: the first is using master of the CMOS transistor as amplifier
Device is wanted, second is using main devices of the bipolar junction transistor as amplifier, and first way can be such that amplifier obtains
Better performance, such as power consumption, area, driving capability, manufacturing cost and the technology stability of amplification are obtained, but in noiseproof feature
Aspect is not so good as the second way, and the second way has the advantages that low noise, but other performances are not so good as first way.
In conclusion the transistor that amplifier in the prior art uses be all based on individual CMOS transistor or
Individual bipolar junction transistor realizes that the noiseproof feature of CMOS transistor is poor, and other performances of bipolar junction transistor are poor.
Summary of the invention
The invention aims to solve the problems, such as that the noiseproof feature of the existing amplifier based on CMOS transistor is poor, mention
A kind of unit amplifier out.
The technical proposal adopted by the invention to solve the above technical problems is that: unit amplifier, including first order amplifier,
Second level amplifier and current source module, the second level amplifier are CMOS transistor, and the current source module is put with rear class
The input terminal connection of big device, the first order amplifier are bipolar junction transistor, and the current source module includes above setting current source
Module and underlying current source module, it is described on set current source module respectively with the collector of bipolar transistor and second level amplifier
Input terminal connection, the emitter of the underlying current source module and bipolar junction transistor connects.
Further, to control effectively to input current, it is described on to set current source module include NMOS transistor, institute
Stating underlying current source module includes PMOS transistor, and one end of the NMOS transistor is connect with input voltage interface, the other end
It is connect respectively with the input terminal of the collector of bipolar junction transistor and second level amplifier, one end of the PMOS transistor and double
The emitter of bipolar transistor connects, other end ground connection.
Further, to receive differential signal, the bipolar junction transistor includes the first bipolar junction transistor and second pair
Bipolar transistor, it is described on to set current source module include setting on first and setting current source module on current source module and second, it is described
Underlying current source module includes the first underlying current source module and the second underlying current source module.
Further, to meet the parameter function needed, the second level amplifier fixed setting is that 9 times of difference of closed loop increase
Benefit.
Further, the bipolar junction transistor is NPN transistor.
The beneficial effects of the present invention are: unit amplifier of the present invention, is based on CMOS transistor as the second level
The amplifier of amplifier uses bipolar junction transistor as first order amplifier, entire amplifier formed bipolar junction transistor and
The low noise advantage of the bad bipolar junction transistor of partial properties is utilized to make up in the mode of CMOS transistor hybrid working
The weakness of CMOS transistor in this respect is put to realize and make high performance low noise in the standard CMOS process of low cost
Big device reduces noise for the amplifier individually based on COMS transistor, for being individually based on bipolar transistor
For the amplifier of pipe, driving capability is improved, is reduced costs and power consumption.
Detailed description of the invention
Fig. 1 is the circuit diagram of unit amplifier described in the embodiment of the present invention；
Description of symbols:
The first bipolar junction transistor of Q1-；The second bipolar junction transistor of Q2-；The underlying current source module of I1- first；I2- second
Underlying current source module；Current source module is set on I3- first；Current source module is set on I4- second；The second level OP- amplifier.
Specific embodiment
Embodiments of the present invention are described in detail below in conjunction with attached drawing.
Unit amplifier of the present invention, including first order amplifier, second level amplifier and current source module, it is described
Second level amplifier is CMOS transistor, and the input terminal of the current source module and post-amplifier connects, and the first order is put
Big device is bipolar junction transistor, and the current source module includes above setting current source module and underlying current source module, it is described on set
Current source module is connect with the input terminal of the collector of bipolar transistor and second level amplifier respectively, the underlying current source mould
The connection of the emitter of block and bipolar junction transistor.
After input signal enters bipolar junction transistor, the letter of the electric current inside bipolar junction transistor is converted by voltage signal
Number, meanwhile, it above sets current source module and underlying current source module and size influence is carried out on the switching current of bipolar junction transistor, on
It sets current source module, underlying current source module and bipolar junction transistor formation equivalent resistance size and the ratio of supply voltage is formed
Branch current provides input voltage for second level amplifier.
Embodiment
Unit amplifier described in the embodiment of the present invention, as shown in Figure 1, including first order amplifier, second level amplifier
And current source module, the second level amplifier are CMOS transistor, the input terminal of the current source module and post-amplifier
Connection, the first order amplifier are bipolar junction transistor, and the current source module includes above setting current source module and underlying electricity
Flow source module, it is described on set current source module respectively with the input terminal of the collector of bipolar transistor and second level amplifier connect
It connects, the emitter connection of the underlying current source module and bipolar junction transistor.
Since the input signal of input amplifier may be smaller, it is also possible to not near ideal common-mode voltage electricity,
Carrying out clamper therefore, it is necessary to the base voltage to bipolar junction transistor, to stablize input signal attached in ideal electrical voltage point
Closely, it is ensured that the normal work that bipolar junction transistor can be stable, thus the size of stable feedback input signal.
The present embodiment is the unit amplifier based on CMOS transistor for post-amplifier, passes through post-amplifier i.e. second
Grade amplifier realizes the last amplification of input signal, and provides certain driving capability, it is ensured that rear class unit can normally receive.
Optionally, bipolar junction transistor described in the present embodiment is NPN transistor comprising the first bipolar junction transistor
Q1 and the second bipolar junction transistor Q2, it is described on to set current source module include setting to set electricity on current source module I3 and second on first
Source module I4 is flowed, the underlying current source module includes the first underlying underlying current source module I2 of current source module I1 and second.
Two-way input to amplifier, can be used a certain number of bipolar junction transistors as first order amplifier, connects
The input differential signal from input terminal INN and INP is received, also can receive single-ended signal.
Optionally, above setting current source module includes NMOS transistor, and underlying current source module includes PMOS transistor, described
One end of NMOS transistor is connect with input voltage interface, and the other end is put with the collector of bipolar junction transistor and the second level respectively
The input terminal connection of big device, one end of the PMOS transistor and the emitter of bipolar junction transistor connect, other end ground connection.
The bias voltage that biasing module inputs is converted into bias current to generate branch current by NMOS transistor and PMOS transistor
Part biases, wherein the biasing module for generating bias voltage generates three kinds of different bias voltages, comprising: (1) underlying current source
The bias voltage that the NMOS transistor of module needs；(2) bias voltage that the NMOS transistor of current source module needs is set on；
(3) bias voltage that bipolar junction transistor is needed as the input terminal of second level amplifier, which can control bipolar
The input common-mode point of transistor npn npn.
To meet the parameter function needed, amplifier fixed setting in the second level is 9 times of differential gains of closed loop.Due to amplifier
It is fixed on the mode of Closed loop operation, reduces at least four port, the mode of Closed loop operation can simplify setting for the pcb board of chip
Meter.
Claims (5)
1. unit amplifier, including first order amplifier, second level amplifier and current source module, the second level amplifier are
The input terminal of CMOS transistor, the current source module and post-amplifier connects, which is characterized in that the first order amplifier
For bipolar junction transistor, the current source module includes above setting current source module and underlying current source module, it is described on set electric current
Source module is connect with the input terminal of the collector of bipolar transistor and second level amplifier respectively, the underlying current source module with
The emitter of bipolar junction transistor connects.
2. unit amplifier as described in claim 1, which is characterized in that setting current source module on described includes NMOS crystal
Pipe, the underlying current source module includes PMOS transistor, and one end of the NMOS transistor is connect with input voltage interface, separately
One end is connect with the input terminal of the collector of bipolar junction transistor and second level amplifier respectively, one end of the PMOS transistor
It is connect with the emitter of bipolar junction transistor, other end ground connection.
3. unit amplifier as described in claim 1, which is characterized in that the bipolar junction transistor includes the first ambipolar crystalline substance
Body pipe and the second bipolar junction transistor, it is described on to set current source module include setting on first and setting electric current on current source module and second
Source module, the underlying current source module include the first underlying current source module and the second underlying current source module.
4. unit amplifier as described in claim 1, which is characterized in that the second level amplifier fixed setting is closed loop 9
Times differential gain.
5. unit amplifier as described in claim 1, which is characterized in that the bipolar junction transistor is NPN transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811513376.7A CN109639245A (en) | 2018-12-11 | 2018-12-11 | Unit amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811513376.7A CN109639245A (en) | 2018-12-11 | 2018-12-11 | Unit amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109639245A true CN109639245A (en) | 2019-04-16 |
Family
ID=66073041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811513376.7A Pending CN109639245A (en) | 2018-12-11 | 2018-12-11 | Unit amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109639245A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715999A (en) * | 2012-10-04 | 2014-04-09 | 美国亚德诺半导体公司 | Offset current trim circuit |
| CN104348432A (en) * | 2013-08-09 | 2015-02-11 | 成都国腾电子技术股份有限公司 | Single-converted-to-double low noise amplifier with highly balanced and stabilized differential output gain phase |
| CN107017292A (en) * | 2015-12-10 | 2017-08-04 | 格罗方德半导体公司 | The integration of heterojunction bipolar transistor with different base profiles |
-
2018
- 2018-12-11 CN CN201811513376.7A patent/CN109639245A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715999A (en) * | 2012-10-04 | 2014-04-09 | 美国亚德诺半导体公司 | Offset current trim circuit |
| CN104348432A (en) * | 2013-08-09 | 2015-02-11 | 成都国腾电子技术股份有限公司 | Single-converted-to-double low noise amplifier with highly balanced and stabilized differential output gain phase |
| CN107017292A (en) * | 2015-12-10 | 2017-08-04 | 格罗方德半导体公司 | The integration of heterojunction bipolar transistor with different base profiles |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190416 |
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| RJ01 | Rejection of invention patent application after publication |