CN109638104A - A kind of graphene photodetector and preparation method thereof - Google Patents
A kind of graphene photodetector and preparation method thereof Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 80
- 229910052751 metal Inorganic materials 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 134
- 239000000463 material Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 5
- 239000000523 sample Substances 0.000 abstract description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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Abstract
The invention discloses a kind of graphene photodetector and preparation methods comprising: substrate, length, width and short transverse are respectively defined as X, Y, Z-direction；Compartment of terrain is set to light input end and light output end on the substrate in X direction；Optical waveguide structure between the light input end and light output end, comprising: the first metal electrode, index layer and the second metal electrode that are set on the substrate and the graphene layer set on the high refractive index layer surface, first metal electrode, index layer and the second metal electrode are sequentially arranged and are connected along Y-direction；The index layer includes the first low-index layer, high refractive index layer and the second low-index layer for being sequentially arranged and being connected along Y-direction, the high refractive index layer both ends are connected with light input end and light output end respectively, and graphene layer both ends are extended to along Y-direction is covered each by first metal electrode and the second metal electrode.Probe response degree and photodetection bandwidth can be improved in the present invention.
Description
Technical field
The present invention relates to photodetector technical fields, and in particular to a kind of graphene photodetector and its preparation side
Method.
Background technique
In optoelectronic integrated circuit, optical detector is one of receiving end core integrated device, it is by high speed optical data
It is converted into electric signal.Optical detector is that have pyroelectric effect, photoelectric effect, electric absorption effect using material, to detect light
Amplitude.The material system usually utilized has III-V material (InP), SiGe (Si/Ge).
Graphene has excellent photoelectronics characteristic as a kind of new material, for example, broadband photoresponse, strong with light
The ultra-wide to light may be implemented in conjunction with the optical waveguide structure of the materials such as silicon substrate in interaction, ultrafast carrier mobility rate etc.
Band, high-responsivity detection.Ultra wide band, high-responsivity graphene photodetector basic principle be: graphene have zero band gap,
(visible light to Terahertz) can be acted on ultra-wide light wave help；The carrier mobility rate of graphene quickly, is sufficiently designing
After optimizing RC circuit, the 3dB photoelectric respone bandwidth of detector can theoretically arrive 500GHz；Graphene and light interaction simultaneously
It is very strong, so that being conducive to improve responsiveness.
It obtains with good performance currently based on the detector of these material systems and realizes commercialization, but still
There is shortcoming, for example, probe response degree is low, bandwidth is low, preparation process is complicated, higher cost etc..
Summary of the invention
It in view of the deficiencies in the prior art, can the purpose of the present invention is to provide a kind of graphene photodetector
To improve probe response degree and photodetection bandwidth.
To achieve the above objectives, the technical solution adopted by the present invention is that: a kind of graphene photodetector comprising:
Substrate, length, width and short transverse are respectively defined as X, Y, Z-direction；
Compartment of terrain is set to light input end and light output end on the substrate in X direction；
Optical waveguide structure between the light input end and light output end comprising:
The first metal electrode, index layer and the second metal electrode being set on the substrate, the first metal electricity
Pole, index layer and the second metal electrode are sequentially arranged and are connected along Y-direction；The index layer includes along Y-direction successively cloth
The first low-index layer, high refractive index layer and the second low-index layer set and be connected, the high refractive index layer both ends respectively with
Light input end is connected with light output end；
It is set to the graphene layer of the high refractive index layer surface, both ends are extended to along Y-direction is covered each by described first
Metal electrode and the second metal electrode.
Further, the refractive index of the high refractive index layer is 1.8~4.2, the refractive index of first low-index layer
It is 1.0~2.5, the refractive index of second low-index layer is 1.0~2.5, first metal electrode and the second metal electricity
The material of pole includes at least one of gold, silver, copper.
Further, the material of the high refractive index layer includes at least one of GaAs, germanium, silicon, silicon nitride.
Further, first low-index layer, the second low-index layer material include silica, boron nitride,
At least one of silicon nitride.
Further, the high refractive index layer is 150~500nm in the size of Z-direction, and size in the Y direction is 150
~450nm.
Further, the graphene layer is single layer or multi-layer graphene, and the size of graphene layer in z-direction is
0.35~3.5nm.
Further, first low-index layer, the size of the second low-index layer in the Y direction are 10~150nm.
Further, the size of the graphene layer in the Y direction is 1~10um.
Further, the high refractive index layer and the first metal electrode in the Y direction at a distance from be 10~150nm, height folding
Penetrate rate layer and the second metal electrode in the Y direction at a distance from for 10~150nm.
The present invention also provides a kind of preparation methods of graphene photodetector, include the following steps:
The silicon chip on substrate is handled by electron beam exposure and inductive plasma etching, prepares high refractive index
Layer；
Deposited metal film prepares the first metal electrode, the second metal electrode；
Divide between first metal electrode and high refractive index layer and between the second metal electrode and high refractive index layer
The first low-index layer and the second low-index layer are not deposited, and carry out planarization process；
Graphene film is transferred to the first metal electrode, the first low-index layer, high refractive index layer, the second low-refraction
On layer, the second metal electrode, graphene layer is formed.
Compared with the prior art, the advantages of the present invention are as follows:
(1) optical waveguide structure provided in an embodiment of the present invention can make the mould field of TE mode in high refractive index layer and first
Area distribution between metal electrode and between high refractive index layer and the second metal electrode increases, and is conducive to enhancing and covers with upper layer
The interaction of the graphene layer of lid improves probe response degree.
Have benefited from optical waveguide structure of the present invention, device integral capacitor becomes lower, so that the detector possesses more Gao Guang electricity
Detective bandwidth, theoretically three dB bandwidth can reach 200GHz or more.
(2) present invention has benefited from graphene layer and is formed on metal electrode, so that graphene is of high quality after transfer, and
And structure preparation process is simple, is conducive to promote.
Detailed description of the invention
Fig. 1 is graphene photodetector planar structure schematic diagram provided in an embodiment of the present invention；
Fig. 2 is end view drawing at C-C in Fig. 1；
Fig. 3 is graphene photodetector preparation method flow chart provided in an embodiment of the present invention.
In figure: A, light input end；B, light output end；1, substrate；2, the first metal electrode；3, the second metal electrode；4,
One low-index layer；5, high refractive index layer；6, the second low-index layer；7, graphene layer；8, tapered coupling transition region；9, metal
Back taper.
Specific embodiment
Invention is further described in detail with reference to the accompanying drawings and embodiments.
Shown in Figure 1, the embodiment of the invention provides a kind of graphene photodetectors comprising substrate 1, light input
A and light output end B, optical waveguide structure are held, 1 length of substrate, width and short transverse are respectively defined as X, Y, Z-direction, referring to
Shown in Fig. 1 and Fig. 2；
Shown in Figure 1, compartment of terrain is located on substrate 1 in X direction by light input end A and light output end B；
For optical waveguide structure between light input end A and light output end B, optical waveguide structure includes two parts:
First part: the first metal electrode 2, index layer and the second metal electrode 3 on substrate 1, the first gold medal are set
Belong to electrode 2, index layer and the second metal electrode 3 to be sequentially arranged and be sequentially connected along Y-direction；Index layer includes along Y-direction
The first low-index layer 4, high refractive index layer 5 and the second low-index layer 6 for being sequentially arranged and being sequentially connected, high refractive index layer 5
Both ends are connected with light input end A and light output end B respectively；It is shown in Figure 1, in the present embodiment, the first metal electrode 2, first
Low-index layer 4, high refractive index layer 5, the second low-index layer 6, the second metal electrode 3 be in the Y direction be sequentially arranged and according to
It is secondary to be connected, it of courses, it can also be in the following way: the first metal electrode 2, the second low-index layer 6, high refractive index layer 5, the
One low-index layer 4, the second metal electrode 3 are to be sequentially arranged and be sequentially connected in the Y direction；
Second part: the graphene layer 7 set on 5 surface of high refractive index layer, both ends are extended to along Y-direction is covered each by
One metal electrode 2 and the second metal electrode 3, referring to shown in Fig. 1 and 2, graphene layer 7 is covered in the first metal electrode along Y-direction
2, the first low-index layer 4, high refractive index layer 5, the second low-index layer 6, on the second metal electrode 3.
Optical waveguide structure provided in an embodiment of the present invention can make the mould field of TE mode in high refractive index layer and the first gold medal
(i.e. second is low between (i.e. the first low-index layer region) and high refractive index layer and the second metal electrode between category electrode
Index layer region) area distribution increase, be conducive to enhancing with upper layer covering graphene layer interaction, improve
Probe response degree.
Have benefited from optical waveguide structure of the present invention, device integral capacitor becomes lower, so that the detector possesses more Gao Guang electricity
Detective bandwidth, theoretically three dB bandwidth can reach 200GHz or more.
It is formed on metal electrode in addition, the present invention has benefited from graphene layer, so that graphene is of high quality after transfer,
And structure preparation process is simple, is conducive to promote.
In the present embodiment, the refractive index of high refractive index layer 5 is 1.8~4.2, and the refractive index of the first low-index layer 4 is 1.0
~2.5, the refractive index of the second low-index layer 6 is 1.0~2.5；The material packet of first metal electrode 2 and the second metal electrode 3
At least one of gold, silver, copper are included, there is characteristics of plasma.
The material of high refractive index layer 5 includes at least one of GaAs, germanium, silicon, silicon nitride.First low-index layer 4,
The material of second low-index layer 6 includes at least one of silica, boron nitride, silicon nitride.
High refractive index layer 5 is 150~500nm in the size of Z-direction, and size in the Y direction is 150~450nm.
Graphene layer 7 is single layer or multi-layer graphene, and the size of graphene layer in z-direction is 0.35~3.5nm.
First low-index layer 4, the size of the second low-index layer 6 in the Y direction are 10~150nm.
The size of graphene layer 7 in the Y direction is 1~10um.
High refractive index layer 5 and the first metal electrode 2 in the Y direction at a distance from be 10~150nm, high refractive index layer 5 and the
The distance of two metal electrodes in the Y direction is 10~150nm.
Shown in Figure 1, graphene photodetector further includes two tapered coupling transition regions 8 on substrate 1: its
In one be set between light input end A and high refractive index layer 5, and its both ends respectively with 5 phase of light input end A and high refractive index layer
Even, which is gradually reduced from light input end A to high refractive index layer 5；Two 1 cones
Type couple transition region 8 between light output end B and high refractive index layer 5, and its both ends respectively with light output end B and high refractive index
Layer 5 is connected, which is gradually reduced from light output end B to high refractive index layer 5.
Graphene photodetector further includes the metal back taper 9 on substrate 1, and shown in Figure 1, metal back taper 9 has
Four, two of them arranged for interval and are connected to 2 both ends of the first metal electrode along the x axis, two outer two along the x axis
Arranged for interval is simultaneously connected to 3 both ends of the second metal electrode, and the metal back taper 9 being connected with the first metal electrode 2 is in the Y direction
Size be gradually reduced from it close to one end of the first metal electrode 2 towards far from extreme direction of the first metal electrode 2, with second
The size of the connected metal back taper 9 of metal electrode 3 in the Y direction from its close to one end of the second metal electrode 3 towards far from second
One extreme direction of metal electrode 3 is gradually reduced.
The taper of metal back taper 9 is adapted with the taper of tapered coupling transition region 8, and (first is low by low-index layer for the two
Index layer 4, the second low-index layer 6) it separates.
Shown in Figure 3, the embodiment of the invention also provides a kind of preparation methods of graphene photodetector, including such as
Lower step:
S1: being handled the silicon chip on substrate 1 by electron beam exposure and inductive plasma etching, prepares high refraction
Rate layer 5；
S2: conductive metal deposition film prepares the first metal electrode 2, the second metal electrode 3；
S3: between the first metal electrode 2 and high refractive index layer 5 and between the second metal electrode 3 and high refractive index layer 5
The first low-index layer 4 and the second low-index layer 6 are deposited respectively, and carry out planarization process；
S4: it is low that graphene film is transferred to the first metal electrode 2, the first low-index layer 4, high refractive index layer 5, second
On index layer 6, the second metal electrode 3, graphene layer 7 is formed.
The present invention is not limited to the above-described embodiments, for those skilled in the art, is not departing from
Under the premise of the principle of the invention, several improvements and modifications can also be made, these improvements and modifications are also considered as protection of the invention
Within the scope of.The content being not described in detail in this specification belongs to the prior art well known to professional and technical personnel in the field.
Claims (10)
1. a kind of graphene photodetector, characterized in that it comprises:
Substrate (1), length, width and short transverse are respectively defined as X, Y, Z-direction；
Compartment of terrain is set to light input end (A) and light output end (B) on the substrate (1) in X direction；
Optical waveguide structure between the light input end (A) and light output end (B) comprising:
The first metal electrode (2), index layer and the second metal electrode (3) being set on the substrate (1), first gold medal
Belong to electrode (2), index layer and the second metal electrode (3) to be sequentially arranged and be connected along Y-direction；The index layer includes along Y
The first low-index layer (4), high refractive index layer (5) and the second low-index layer (6) that direction is sequentially arranged and is connected, the height
Index layer (5) both ends are connected with light input end (A) and light output end (B) respectively；
It is set to the graphene layer (7) on the high refractive index layer (5) surface, both ends are extended to along Y-direction is covered each by described the
One metal electrode (2) and the second metal electrode (3).
2. graphene photodetector as described in claim 1, it is characterised in that: the refractive index of the high refractive index layer (5)
It is 1.8~4.2, the refractive index of first low-index layer (4) is 1.0~2.5, the folding of second low-index layer (6)
Penetrating rate is 1.0~2.5, the material of first metal electrode (2) and the second metal electrode (3) include gold, silver, in copper at least
It is a kind of.
3. graphene photodetector as described in claim 1, it is characterised in that: the material packet of the high refractive index layer (5)
Include at least one of GaAs, germanium, silicon, silicon nitride.
4. graphene photodetector as described in claim 1, it is characterised in that: first low-index layer (4), second
The material of low-index layer (6) includes at least one of silica, boron nitride, silicon nitride.
5. graphene photodetector as described in claim 1, it is characterised in that: the high refractive index layer (5) is in Z-direction
Having a size of 150~500nm, size in the Y direction is 150~450nm.
6. graphene photodetector as described in claim 1, it is characterised in that: the graphene layer (7) be single layer or
Multi-layer graphene, the size of graphene layer in z-direction are 0.35~3.5nm.
7. graphene photodetector as described in claim 1, it is characterised in that: first low-index layer (4), second
The size of low-index layer (6) in the Y direction is 10~150nm.
8. graphene photodetector as described in claim 1, it is characterised in that: the graphene layer (7) is in the Y direction
Having a size of 1~10um.
9. graphene photodetector as described in claim 1, it is characterised in that: the high refractive index layer (5) and the first gold medal
Belonging to electrode (2) distance in the Y direction is 10~150nm, and high refractive index layer (5) and the second metal electrode (3) are in the Y direction
Distance is 10~150nm.
10. a kind of preparation method of graphene photodetector as described in claim 1, which is characterized in that including walking as follows
It is rapid:
The silicon chip on substrate (1) is handled by electron beam exposure and inductive plasma etching, prepares high refractive index layer
(5)；
Deposited metal film prepares the first metal electrode (2), the second metal electrode (3)；
Between first metal electrode (2) and high refractive index layer (5) and the second metal electrode (3) and high refractive index layer
(5) the first low-index layer (4) and the second low-index layer (6) are deposited between respectively, and carries out planarization process；
Graphene film is transferred to the first metal electrode (2), the first low-index layer (4), high refractive index layer (5), second low
On index layer (6), the second metal electrode (3), formed graphene layer (7).
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| CN110112250A (en) * | 2019-04-25 | 2019-08-09 | 淮阴工学院 | Graphene optical-electronic detector and preparation method thereof |
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| CN105655420A (en) * | 2016-01-12 | 2016-06-08 | 浙江大学 | Glass-based waveguide type photoelectric detector and preparation method thereof based on graphene light absorption properties |
| WO2016106731A1 (en) * | 2014-12-31 | 2016-07-07 | 华为技术有限公司 | Graphene groove waveguide photodetector |
| CN108181735A (en) * | 2017-12-25 | 2018-06-19 | 武汉邮电科学研究院 | A kind of graphene electro-optical modulator and preparation method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016106731A1 (en) * | 2014-12-31 | 2016-07-07 | 华为技术有限公司 | Graphene groove waveguide photodetector |
| CN105655420A (en) * | 2016-01-12 | 2016-06-08 | 浙江大学 | Glass-based waveguide type photoelectric detector and preparation method thereof based on graphene light absorption properties |
| CN108181735A (en) * | 2017-12-25 | 2018-06-19 | 武汉邮电科学研究院 | A kind of graphene electro-optical modulator and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110112250A (en) * | 2019-04-25 | 2019-08-09 | 淮阴工学院 | Graphene optical-electronic detector and preparation method thereof |
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