CN220155555U - On-chip integrated microwave photon detector - Google Patents
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- CN220155555U CN220155555U CN202321654063.XU CN202321654063U CN220155555U CN 220155555 U CN220155555 U CN 220155555U CN 202321654063 U CN202321654063 U CN 202321654063U CN 220155555 U CN220155555 U CN 220155555U
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 121
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 121
- 239000010703 silicon Substances 0.000 claims abstract description 121
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 84
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 84
- 229910052751 metal Inorganic materials 0.000 claims abstract description 69
- 239000002184 metal Substances 0.000 claims abstract description 69
- 238000010521 absorption reaction Methods 0.000 claims abstract description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 23
- 238000005253 cladding Methods 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000006096 absorbing agent Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000012938 design process Methods 0.000 abstract description 4
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The utility model discloses an on-chip integrated microwave photon detector, which comprises at least two metal electrodes, a germanium absorption layer and a silicon doping layer, wherein the metal electrodes are connected with the silicon doping layer through metal vias, the germanium absorption layer is arranged on a gap between the silicon doping layers formed after each two metal electrodes are connected with the silicon doping layer, a silicon waveguide is arranged at the edge of the silicon doping layer, and the end part of the germanium absorption layer is connected with the silicon waveguide; the utility model has the advantages that: the design process of the photoelectric detector is simple.
Description
Technical Field
The utility model relates to the field of photoelectric detectors, in particular to an on-chip integrated microwave photon detector.
Background
The high-speed high-power photoelectric detector is a key device in microwave photon applications such as optical carrier radio communication (ROF), low-phase noise microwave signal generation, antenna remote processing, arbitrary waveform generation and the like. These applications require high power and high linearity Photodetectors (PD) to maintain high Radio Frequency (RF) gain and large Spurious Free Dynamic Range (SFDR). Various PD structures have been reported to achieve high power RF output in the microwave frequency range. The related studies are mainly conducted from the following aspects.
First, a single-transit-carrier photodiode structure (UTC) PD is employed. In UTC PD, photons excite electron-hole pairs in the unconsumed absorber layer. Since only electrons are injected into the transparent drift layer, the transit time is short and the space charge effect is weakened compared with the conventional p-i-n PD, so that higher optical power can be detected. And secondly, the size of the p-i-n photoelectric detector is increased, the density of photo-generated carriers is reduced under the condition that the total photocurrent is unchanged, and the output saturation of the device is avoided. Thirdly, a segmented loading Traveling Wave PD (TWPD) structure is adopted. According to the scheme, the incident light is equally divided into a plurality of conventional Ge/Si waveguide type PIN PDs by using a power divider to detect, and then photocurrent signals detected by the PDs are collected by using traveling wave electrodes. Since a plurality of PDs are employed in parallel, the level of detectable optical power is greatly increased. The DC photoelectric response characteristics of the device were tested in the literature X Luo, J Song, X Tu, Q Fang, L Jia, Y Huang, T Y Liow, M Yu, and G Q Lo. Silicon-based delivery-wave photodetector array (Si-TWPDA) with parallel optical feeding [ J ], optics express,2014,22 (17): 20020-20026 ]. When 4 PIN PDs are employed, the dc maximum linear output photocurrent is 65mA. Fourth, structures bonded to silicon waveguides using group iii-v UTC PD have the greatest saturated output power, but group iii-v materials and bonding processes are not compatible with CMOS processes. Increasing the saturation current by increasing the PD size increases the RC time constant of the device, which is lower in bandwidth.
Based on the rapid development of the various PD structures described above, waveguide-coupled germanium (Ge) p-i-n Photodetectors (PDs) have been attracting attention and research due to their high performance and achievable on-chip integration. Conventional waveguide-coupled PDs require metal contacts and doping on Ge to form p-i-n junctions. However, in the standard CMOS process, the technology of the Ge metal contact electrode is still not mature, thus leading to a complex design process of the corresponding PDs.
Disclosure of Invention
The technical problem to be solved by the utility model is that the photoelectric detector in the prior art needs to be in metal contact with Ge, so that the design process of the photoelectric detector is complex.
The utility model solves the technical problems by the following technical means: the microwave photon detector comprises at least two metal electrodes, a germanium absorption layer and a silicon doping layer, wherein the metal electrodes are connected with the silicon doping layer through metal through holes, the germanium absorption layer is arranged on a middle gap of the silicon doping layer formed after each two metal electrodes are connected with the silicon doping layer, a silicon waveguide is arranged at the edge of the silicon doping layer, and the end part of the germanium absorption layer is connected with the silicon waveguide.
Further, the silicon waveguide receives an optical signal, the germanium absorbing layer absorbs the optical signal, and all the doping (N-type doping and P-type doping) is located in the silicon doped layer.
Further, two metal electrodes are respectively connected with the silicon doped layer through metal vias, a germanium absorption layer is arranged on a middle gap of the silicon doped layer formed after the two metal electrodes are connected with the silicon doped layer, the silicon doped layer at the position of one end of the germanium absorption layer extends outwards to form a silicon waveguide, one end of the germanium absorption layer is connected with the silicon waveguide, the other end of the germanium absorption layer is suspended, and a single-end incidence structure of the single detector is integrally formed.
Further, three metal electrodes are respectively connected with the silicon doped layers through metal through holes, a germanium absorbing layer is arranged in a middle gap of the silicon doped layers formed after two adjacent metal electrodes are connected with the silicon doped layers, the two germanium absorbing layers are parallel, the silicon doped layers at the positions of one ends of the germanium absorbing layers outwards extend to form two parallel silicon waveguides, one ends of the two germanium absorbing layers are respectively connected with the corresponding silicon waveguides, the other ends of the two germanium absorbing layers are suspended, and a double-detector single-end incident structure is integrally formed. The middle gap between the two absorption layers adopts P-type high doping, an electrode connected above the P-type high doping through a via hole is a signal electrode (S electrode), the electrode is a common electrode of the detectors at the two sides, and parallel connection of the two detectors can be realized only by a single-layer metal process. The two silicon waveguides connected with the germanium absorption layer have the same length from the light incidence position to the germanium absorption layer end.
Further, three metal electrodes are respectively connected with the silicon doped layers through metal through holes, a germanium absorption layer is arranged in a middle gap of the silicon doped layers formed after two adjacent metal electrodes are connected with the silicon doped layers, the two germanium absorption layers are parallel, the silicon doped layers at the positions of one ends of the germanium absorption layers extend outwards to form two parallel silicon waveguides, the silicon doped layers at the positions of the other ends of the germanium absorption layers also extend outwards to form two parallel silicon waveguides, one ends of the two germanium absorption layers and the other ends of the two germanium absorption layers are respectively connected with the silicon waveguides at the corresponding positions, and a double-end incident structure of the double detector is integrally formed. The middle gap between the two absorption layers adopts P-type high doping, an electrode connected above the P-type high doping through a via hole is a signal electrode (S electrode), the electrode is a common electrode of the detectors at the two sides, and parallel connection of the two detectors can be realized only by a single-layer metal process. The four silicon waveguides connected with the germanium absorption layer have the same length from the light incidence position to the germanium absorption layer end.
Further, the microwave photon detector also comprises a silicon oxide upper cladding layer, and the silicon doped layer, the metal via hole and the germanium absorption layer are filled by the silicon oxide upper cladding layer.
Furthermore, the microwave photon detector also comprises a silicon oxide lower cladding layer, and the silicon oxide lower cladding layer is attached to the silicon doped layer opposite to the back side of the germanium absorbing layer.
Still further, the microwave photon detector further comprises a silicon substrate layer, and the silicon substrate layer is attached to the opposite surface of the silicon oxide lower cladding layer to the surface where the silicon doped layer is connected.
Further, the silicon oxide upper cladding layer and the silicon oxide lower cladding layer are made of silicon dioxide.
Further, the metal electrode is made of aluminum.
The utility model has the advantages that:
(1) Compared with the prior art, the utility model has the advantages that the metal electrode is not formed due to the fact that the metal contact is performed on Ge, so that the problem that the design of the whole detector is complex because the technology of the Ge metal contact electrode is not mature in the conventional CMOS process is avoided, and compared with the CMOS process, the utility model has the advantages that only the whole photon detector is additionally provided with two metal electrodes connected with the silicon doped layer, no additional process step is required, the process and the structure are simple, and the design process of the photoelectric detector is simpler.
(2) According to the utility model, all doping and electrode contact are only carried out on the silicon doped layer, the germanium absorption layer is only used for absorbing optical signals, and a metal electrode is not formed due to metal contact on Ge, so that the metal electrode is prevented from absorbing light, and the sharp reduction of the responsivity of the photon detector is further avoided.
(3) According to the utility model, the single-end incidence structure of the single-photon detector, the single-end incidence structure of the two-photon detector and the double-end incidence structure of the two-photon detector are formed by setting the numbers of the metal electrodes, the silicon waveguides and the germanium absorption layers, so that the single-end incidence structure of the single-photon detector, the single-end incidence structure of the two-photon detector and the double-end incidence structure of the two-photon detector can be applied to different application scenes and have strong applicability.
(4) The single-end incidence structure of the two-photon detector and the double-end incidence structure of the two-photon detector adopt parallel structures, the Ge double-absorption area shares the signal and the grounding electrode, the transmission direction of the electric signal is parallel to the transmission direction of the light, and as the incident power is uniformly divided into multiple paths to enter the photon detector, the optical density is effectively reduced, the space charge effect of the photon detector is further suppressed, and the output power of the photon detector is remarkably improved.
Drawings
FIG. 1 is a schematic diagram of a three-dimensional structure of an on-chip integrated microwave photon detector according to embodiment 1 of the present utility model;
FIG. 2 is a schematic diagram of a three-dimensional structure of an on-chip integrated microwave photon detector according to embodiment 2 of the present utility model;
FIG. 3 is a cross-sectional view of an on-chip integrated microwave photon detector as disclosed in embodiment 2 of the utility model;
FIG. 4 is a schematic diagram of a three-dimensional structure of an on-chip integrated microwave photon detector according to embodiment 3 of the present utility model;
FIG. 5 is a schematic diagram showing dark current comparison of an on-chip integrated microwave photon detector according to 3 embodiments of the present utility model;
FIG. 6 is a schematic diagram showing comparison of photocurrents of an on-chip integrated microwave photon detector according to 3 embodiments of the present utility model;
fig. 7 is a graph showing normalized frequency response of an on-chip integrated microwave photon detector in accordance with 3 embodiments of the present utility model.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions in the embodiments of the present utility model will be clearly and completely described in the following in conjunction with the embodiments of the present utility model, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Example 1
As shown in fig. 1, an on-chip integrated microwave photon detector comprises at least two metal electrodes 1, a silicon doped layer 3 and a germanium absorbing layer 4, wherein the metal electrodes 1 are connected with the silicon doped layer 3 through metal vias 2, the germanium absorbing layer 4 is arranged on a gap between each two metal electrodes 1 and the silicon doped layer 3 formed after the metal electrodes are connected with the silicon doped layer 3, a silicon waveguide 5 is arranged at the edge of the silicon doped layer 3, the end part of the germanium absorbing layer 4 is connected with the silicon waveguide 5, light enters the germanium absorbing layer 4 after entering the silicon waveguide 5, the germanium absorbing layer 4 is used for absorbing optical signals, and all doping is located in the silicon doped layer 3. The silicon doped layer 3, the metal via hole 2 and the germanium absorption layer 4 are filled by a silicon oxide upper cladding layer 6. A silicon oxide lower cladding layer 7 is attached to the back side of the silicon doped layer 3 opposite to the germanium absorbing layer 4. The silicon substrate layer 8 is attached to the surface of the silicon oxide under-cladding layer 7 opposite to the surface to which the silicon doped layer 3 is attached. The silicon oxide upper cladding layer 6 and the silicon oxide lower cladding layer 7 are made of silicon dioxide. The metal electrode 1 is made of aluminum.
As a specific embodiment, two metal electrodes 1 are respectively connected with the silicon doped layer 3 through the metal via holes 2, a germanium absorbing layer 4 is disposed on the middle gap of the silicon doped layer 3 formed after the two metal electrodes 1 are connected with the silicon doped layer 3, the silicon doped layer 3 at the position of one end of the germanium absorbing layer 4 extends outwards to form a silicon waveguide 5, one end of the germanium absorbing layer 4 is connected with the silicon waveguide 5, the other end of the germanium absorbing layer 4 is suspended, and a single-end incident structure of the single photon detector is integrally formed.
The doping and electrode contact are only carried out on Si materials, the germanium absorption layer 4 is an intrinsic material and is only used for absorbing C-band optical signals, the process and the structure are simple, and the PD is prepared by adopting a standard CMOS process. After the preparation of the detector material, such as the material growth and the formation of the PIN structure, is completed on the silicon substrate layer 8 (SOI substrate), the metal electrode 1 is entirely made of Al by a series of device preparation process steps, such as cleaning, photolithography, etching, sputtering, stripping, and the like. Finally, the preparation of the SOI-based Ge waveguide PD is completed. Light in the optical fiber enters the silicon waveguide 5 through the grating coupler, is split by a multi-stage 1X2 multimode interference device (MMI), and finally enters the germanium absorption layer 4 through evanescent wave coupling.
Through the technical scheme, all doping and electrode contact are only carried out on the silicon doping layer 3, the germanium absorption layer 4 is only used for absorbing optical signals, and the metal electrode 1 is not formed due to metal contact on Ge, so that the metal electrode 1 is prevented from absorbing light, and the sharp reduction of the responsivity of a photon detector is further avoided.
Example 2
As shown in fig. 2, unlike embodiment 1, the specific number of the metal electrodes 1, the silicon waveguides 5 and the germanium absorbing layers 4 in embodiment 2 of the present utility model is different, in this embodiment, three metal electrodes 1 are respectively connected with the silicon doped layers 3 through metal vias 2, two adjacent metal electrodes 1 are respectively disposed on a middle gap of the silicon doped layers 3 formed after being connected with the silicon doped layers 3, the two germanium absorbing layers 4 are parallel, the silicon doped layers 3 at the position where one end of the germanium absorbing layer 4 is located extend outwards to form two parallel silicon waveguides 5, one ends of the two germanium absorbing layers 4 are respectively connected with the corresponding silicon waveguides 5, and the other ends of the two germanium absorbing layers 4 are suspended, so that a single-end incident structure of the two-photon detector is integrally formed. The cross-section schematic diagram of the common P/N doping and the common S pole PD studied in the utility model is shown in figure 3, wherein n+ and n++ are N-type doping and p+ and p++ are P-type doping, and the basic unit of the device is shown in a box.
Example 3
As shown in fig. 4, unlike embodiment 1, the specific number of the metal electrodes 1, the silicon waveguides 5, and the germanium absorbing layers 4 in embodiment 3 of the present utility model is different, in this embodiment, three metal electrodes 1 are respectively connected with the silicon doped layers 3 through metal vias 2, one germanium absorbing layer 4 is disposed on the middle gap of the silicon doped layer 3 formed after two adjacent metal electrodes 1 are connected with the silicon doped layers 3, the two germanium absorbing layers 4 are parallel, the silicon doped layers 3 at the position of one end of the germanium absorbing layer 4 extend outwards to form two parallel silicon waveguides 5, the silicon doped layers 3 at the position of the other end of the germanium absorbing layer 4 also extend outwards to form two parallel silicon waveguides 5, one end of the two germanium absorbing layers 4 and the other end of the two germanium absorbing layers 4 are respectively connected with the silicon waveguides 5 at the corresponding positions, and the whole incident structure of the two-photon detector is formed.
The germanium absorber layer 4 in all PD structures of the utility model was 0.5 μm wide, 0.26 μm thick and 15.2 μm long. After the PD with the three structures is formed, the utility model performs characteristic test on the PD with the three structures to obtain a test result. In the characteristic test process, the structure a corresponds to a single-end incident structure of the single-photon detector, the structure B corresponds to a single-end incident structure of the two-photon detector, and the structure C corresponds to a double-end incident structure of the two-photon detector.
1. Static characteristic test
The dark current of the three structures PD was tested and the results are shown in fig. 5. The dark currents of structure B and structure C are substantially uniform because the junction areas of the two are uniform. Dark current is doubled for structures B and C compared to structure a because the junction area of structure B/C is doubled compared to structure a. at-3V, the dark currents for the three structures were 26.5, 46.6 and 48nA, respectively.
The PD current versus input optical power was measured by increasing the incident optical power step by an optical amplifier, and the three structure saturation currents were varied with the incident optical power as shown in fig. 6. As can be seen from fig. 6, the saturated photocurrents of the three structures were 8.4, 14.5 and 30.7mA at a bias voltage of-3V, respectively. When the optical power applied to the three probes during the test is greater than 18, 28.5 and 71.6mW, the probe A, B is burned out, while the probe C still works properly, limited by the test conditions and the maximum sustainable optical power of the structure C is not measured. From the test results, it can be seen that the saturation output current characteristics of the proposed A, B and C structures PD are progressively improved, especially structure C has a significant improvement over a. The responsivity of the three structures was 0.64,0.87 and 0.6A/W, respectively, at a bias of-3V.
2. High speed performance test
The S21 curves of the three structures PD measured under-3V bias and 1.8mW optical power input conditions are shown in fig. 7. As can be seen from fig. 7, the 3dB bandwidths for the three structures are 60, 55 and 41GHz, respectively. Structure a suffers from degradation of device bandwidth relative to B, C due to the increased total capacitance after the dual devices are connected in parallel, resulting in a reduced bandwidth. The bandwidth of the C structure is also degraded compared to the B structure, possibly due to the phase delay of the double-sided light, the optical signals are not synchronized, and the bandwidth is eventually reduced.
3. Conclusion(s)
The waveguide coupling Ge p-i-n PDs are designed and manufactured based on the CSiP180Al process. The PD unit structure adopts a lateral structure, and the Si/Ge/Si heterojunction PIN optical waveguide PD is manufactured through full Si doping. Three structures PD were designed and fabricated, namely a common single-PD single-ended incidence structure, a dual-PD single-ended incidence structure, and a dual-PD double-ended incidence structure. The double PDs adopt parallel structures, the Ge double absorption areas share the signal and the grounding electrode, and the transmission direction of the electric signals is parallel to the transmission direction of the light. Because the incident power is uniformly divided into four paths to enter the detector, the optical density is effectively reduced, the space charge effect of the PD is further suppressed, and the output power of the PD is remarkably improved. Compared with the traditional single PD, the saturation current of the PD with the novel structure is improved by 350 percent, and meanwhile, the-3 dB photoelectric cutoff frequency reaches 38GHz at the voltage of-3 v.
The above embodiments are only for illustrating the technical solution of the present utility model, and are not limiting; although the utility model has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present utility model.
Claims (10)
1. The on-chip integrated microwave photon detector is characterized by comprising at least two metal electrodes, a germanium absorption layer and a silicon doping layer, wherein the metal electrodes are connected with the silicon doping layer through metal through holes, the germanium absorption layer is arranged on a middle gap of the silicon doping layer formed after each two metal electrodes are connected with the silicon doping layer, a silicon waveguide is arranged at the edge of the silicon doping layer, and the end part of the germanium absorption layer is connected with the silicon waveguide.
2. An integrated microwave photon detector in chip according to claim 1 wherein said silicon waveguide receives an optical signal and said silicon doped layer has N-type doping and P-type doping disposed thereon.
3. The integrated microwave photon detector on chip according to claim 1, wherein two metal electrodes are respectively connected with the silicon doped layer through metal vias, a germanium absorbing layer is arranged on a silicon doped layer middle gap formed after the two metal electrodes are connected with the silicon doped layer, the silicon doped layer at the position of one end of the germanium absorbing layer extends outwards to form a silicon waveguide, one end of the germanium absorbing layer is connected with the silicon waveguide, the other end of the germanium absorbing layer is suspended, and a single-detector optical signal single-ended incident structure is integrally formed.
4. The on-chip integrated microwave photon detector as claimed in claim 1 wherein three metal electrodes are respectively connected with the silicon doped layer through metal vias, a germanium absorbing layer is arranged on a silicon doped layer intermediate gap formed after two adjacent metal electrodes are connected with the silicon doped layer, the two germanium absorbing layers are parallel, the silicon doped layer at the position of one end of the germanium absorbing layer extends outwards to form two parallel silicon waveguides, one ends of the two germanium absorbing layers are respectively connected with the corresponding silicon waveguides, the other ends of the two germanium absorbing layers are suspended, a double-detector single-end incident structure is integrally formed, a P-type high doping is arranged in the two germanium absorbing layer intermediate gap, and the lengths of the two silicon waveguides connected with the germanium absorbing layer from a light incident position to the germanium absorbing layer end are the same.
5. The on-chip integrated microwave photon detector as claimed in claim 1 wherein the three metal electrodes are respectively connected with the silicon doped layers through metal vias, a germanium absorbing layer is arranged on a silicon doped layer intermediate gap formed after two adjacent metal electrodes are connected with the silicon doped layers, the two germanium absorbing layers are parallel, the silicon doped layers at the positions of one ends of the germanium absorbing layers extend outwards to form two parallel silicon waveguides, the silicon doped layers at the positions of the other ends of the germanium absorbing layers also extend outwards to form two parallel silicon waveguides, one ends of the two germanium absorbing layers and the other ends of the two germanium absorbing layers are respectively connected with the silicon waveguides at the corresponding positions, a double-end incident structure of the double detector is integrally formed, the two germanium absorbing layers intermediate gaps are provided with P-type high doping, and the lengths of four silicon waveguides connected with the germanium absorbing layers from light incident positions to the germanium absorbing layers are the same.
6. The integrated microwave photon detector on chip of claim 1 further comprising a silicon oxide over-cladding layer, the silicon doped layer, the metal via, and the germanium absorber layer being filled with the silicon oxide over-cladding layer.
7. The integrated microwave photon detector on chip of claim 6 further comprising a silicon oxide under-cladding layer attached to the silicon doped layer opposite the backside of the germanium absorbing layer.
8. The integrated microwave photon detector of claim 7 further comprising a silicon substrate layer, wherein a surface of the silicon oxide under-cladding layer opposite the surface to which the silicon doped layer is attached.
9. An integrated microwave photon detector in accordance with claim 7 wherein the silicon oxide upper cladding layer and silicon oxide lower cladding layer are silicon dioxide.
10. An integrated microwave photon detector in chip according to claim 1 wherein the material of the metal electrode is aluminum.
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