CN109637695A - A kind of high-performance thick-film resistor paste composition - Google Patents

A kind of high-performance thick-film resistor paste composition Download PDF

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Publication number
CN109637695A
CN109637695A CN201811518690.4A CN201811518690A CN109637695A CN 109637695 A CN109637695 A CN 109637695A CN 201811518690 A CN201811518690 A CN 201811518690A CN 109637695 A CN109637695 A CN 109637695A
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parts
ruthenic
follows
organic
film resistor
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Inventor
鹿宁
陆冬梅
周宝荣
王要东
王大林
雷莉君
李艳
张亚鹏
刘丝颖
殷美
赵科良
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Xian Hongxing Electronic Paste Technology Co Ltd
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Xian Hongxing Electronic Paste Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14Conductive material dispersed in non-conductive inorganic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables

Abstract

The invention discloses a kind of high-performance thick-film resistor paste compositions, include 12 ~ 44 parts of conductive powder, 20 ~ 60 parts of lead borosilicate glass powder, 0.5 ~ 5 part of inorganic additive, 35 ~ 45 parts of organic carrier, and the above material amounts to 100 parts;The conductive powder is the mixing of one or both of the ruthenic oxide being surface-treated using phosphoric acid lipid organic agent or ruthenic acid lead.The composition of the conductive powder are as follows: ruthenic oxide 40 ~ 100%, ruthenic acid lead 20 ~ 100%.Invention is using the ruthenic oxide of extremely low resistivity and the material of high resistivity ruthenic acid lead as main conductive powder, guarantee in different resistance values, resistance slurry has good resistance stability, excellent proof voltage, resistance to power characteristic, and has good compactness after electrical resistance sintering.

Description

A kind of high-performance thick-film resistor paste composition
Technical field
The present invention relates to a kind of resistance slurry compositions, more particularly to a kind of high-performance thick film circuit resistance slurry group Close object.
Background technique
High-performance thick film circuit is mainly used in Aeronautics and Astronautics and high power, high-accuracy, high tip frontier science and technology product Deng the field for having highly reliable aspect to require thick film circuit, demand of the current whole world to high-performance thick film circuit product is increasingly Greatly, therefore to electric slurry needed for preparation high-performance thick film circuit, especially resistance slurry product requirement is higher.
High-performance thick film circuit product needs resistance slurry to have the features such as resistance accuracy is high, stability is good, and resistance to power is strong, The conditions such as high temperature, high humidity, high and cold, vibration and high power can be subjected in.Therefore resistance slurry product must have high Resistance to power characteristic.
The resistance slurry of traditional handicraft preparation, resistance accuracy is poor, and TCR range is wide, and static discharge changes greatly, in high temperature, height Poor reliability under wet, high and cold, vibration and the long-term power-up condition of power load.
Summary of the invention
The object of the present invention is to provide a kind of high-performance thick-film resistor paste composition, product changes with static discharge The advantages that small, Steadydamp-heat, working life are good stablizes resistance slurry reliable performance.
In order to achieve the above object, a kind of high-performance thick-film resistor paste composition provided by the invention includes following matter The material of part is measured, specifically:
Conductive powder: 12 ~ 44 parts;
Lead borosilicate glass powder: 20 ~ 60 parts;
Inorganic additive: 0.5 ~ 5 part;
Organic carrier: 35 ~ 45 parts;
The above material amounts to 100 parts;
The conductive powder is one in the ruthenic oxide or ruthenic acid lead being surface-treated using phosphoric acid lipid organic agent Kind or two kinds of mixing.
The composition of the conductive powder are as follows: ruthenic oxide 40 ~ 100%, ruthenic acid lead 20 ~ 100%;The composition of the ruthenic oxide Are as follows: specific surface area 5m2/g~10m2The ruthenic oxide 25% ~ 45% of/g, specific surface area 75m2/g~95m2The ruthenic oxide of/g 40%~75%;The composition of the ruthenic acid lead are as follows: specific surface area made from chemical synthesis is 8m2/g~12m2The ruthenic acid lead 35% of/g ~ 45%, the ruthenic acid lead 40% ~ 75% that partial size made from roasting method is 1 μm ~ 1.3 μm.
The lead borosilicate glass powder includes Pb-B-Ca-Si system and Pb-B-Si system, wherein Pb-B-Ca-Si body It is mass fraction be 30 ~ 65%, Pb-B-Si system quality score is 25 ~ 70%;
The inorganic additive is PbO, Pb3O4、B2O3、CaO、CaCO3、Al2O3, ZnO, Cu or its compound, Mn or its chemical combination Object, Fe or its compound, Ta or its compound, Ni or its compound, Nb2O5、Sb2O3、ZrO2、SiO2One of or it is a variety of mixed It closes;
The composition of the organic carrier are as follows: resin 4% ~ 15%, organic additive 1% ~ 5%, organic solvent 80% ~ 95%.
The Pb-B-Ca-Si system particle size of glass powder range is 1.8 μm ~ 2.0 μm, and glass softening point is 580 ~ 620 DEG C, Thermal expansion coefficient is 6.5 × 10-6 ~7.5 × 10-6M/m DEG C, composition are as follows: Pb3O440% ~ 60%, CaO 15% ~ 20%, SiO2 18% ~ 25%, B2O3 3%~10%;The Pb-B--Si system particle size of glass powder range is 0.8 μm ~ 1.0 μm, and glass softening point is 480 ~ 510 DEG C, thermal expansion coefficient is 7.0 × 10-6~8.0 × 10-6 M/m DEG C, composition are as follows: Pb3O450% ~ 75%, SiO2 18% ~ 25%, B2O3 5%~15%。
The resin is rosin resin, ethyl cellulose, hydroxylated cellulose or methylcellulose;The organic solvent is rouge One or more of class, alcohols or ethers.
The conductive powder needs to be surface-treated with organic agent, the mass ratio of inorganic agent and conductive powder are as follows: Inorganic agent/ruthenic oxide=0.1 ~ 5:100, inorganic agent/ruthenic acid lead=0.1 ~ 3:100;Organic agent is phosphate ester type organic, Fusing point is less than 300 DEG C.
The invention has the following advantages that
The present invention using extremely low resistivity ruthenic oxide and high resistivity ruthenic acid lead material as main conductive powder, due to ruthenium It is that the noble metals resistance value such as synthetic relatively silver, palladium is higher, there is better resistance value reproducibility and burning in the preparation of resistance slurry Tie stability.Wherein ruthenic oxide, ruthenic acid lead select the powder collocation mixing of different specific surface areas, partial size, guarantee in different resistances Value, resistance slurry have good resistance stability, excellent proof voltage, resistance to power characteristic, and have after electrical resistance sintering good Good compactness.
The conductive paste material that the present invention uses is on the basis of traditional handicraft, using phosphoric acid lipid organic agent to conduction Phase material powder surface is handled, and by organic agent treated conductive paste material, forms one layer in conductive phase surface Organic film improves the wellability of conductive paste material and organic carrier, conductive phase in the slurry of preparation in slurry preparation process Material can dispersion more evenly, improve the resistance accuracy and reliability of slurry.
Detailed description of the invention
Fig. 1 is embodiment slurry basic performance resolution chart.
Specific embodiment
The present invention will be described in detail With reference to embodiment.
A kind of high-performance thick-film resistor paste composition includes the material of following mass parts, specifically:
Conductive powder: 10 ~ 45 parts;
Lead borosilicate glass powder: 20 ~ 60 parts;
Inorganic additive: 0.5 ~ 5 part;
Organic carrier: 35 ~ 45 parts;
The above material amounts to 100 parts;
The conductive powder is the mixing of one or both of ruthenic oxide or ruthenic acid lead, composition are as follows: ruthenic oxide 40 ~ 100%, Ruthenic acid lead 20 ~ 100%.
The composition of above-mentioned ruthenic oxide are as follows: specific surface area 5m2/g~10m2The ruthenic oxide 25% ~ 45% of/g, specific surface area For 75m2/g~95m2The ruthenic oxide 40% ~ 75% of/g.
The composition of above-mentioned ruthenic acid lead are as follows: specific surface area made from chemical synthesis is 8m2/g~12m2The ruthenic acid lead 35% of/g ~ 45%, the ruthenic acid lead 40% ~ 75% that partial size made from roasting method is 1 μm ~ 1.3 μm.
Above-mentioned conductive powder needs to be surface-treated with organic agent, the mass ratio difference of inorganic agent and conductive powder Are as follows: inorganic agent/ruthenic oxide=0.1 ~ 5:100, inorganic agent/ruthenic acid lead=0.1 ~ 3:100;Organic agent is that phosphoric acid lipid is organic Object, fusing point is less than 300 DEG C.
The lead borosilicate glass powder includes Pb-B-Ca-Si system and Pb-B-Si system, wherein Pb-B-Ca-Si system Content is that 30 ~ 65%, Pb-B-Si system content is 25 ~ 70%.
The Pb-B-Ca-Si system particle size of glass powder range is 1.8 μm ~ 2.0 μm, and glass softening point is 580 ~ 620 DEG C, Thermal expansion coefficient is 6.5 × 10-6 ~7.5 × 10-6M/m DEG C, composition are as follows: Pb3O440% ~ 60%, CaO 15% ~ 20%, SiO2 18% ~ 25%, B2O3 3%~10%;The Pb-B--Si system particle size of glass powder range is 0.8 μm ~ 1.0 μm, and glass softening point is 480 ~ 510 DEG C, thermal expansion coefficient is 7.0 × 10-6~8.0 × 10-6 M/m DEG C, composition are as follows: Pb3O450% ~ 75%, SiO2 18% ~ 25%, B2O3 5%~15%。
The inorganic additive is PbO, Pb3O4、B2O3、CaO、CaCO3、Al2O3, ZnO, Cu or its compound, Mn or its Compound, Fe or its compound, Ta or its compound, Ni or its compound, Nb2O5、Sb2O3、ZrO2、SiO2One of or it is more Kind mixing.
The inorganic additive can be used in lead Pyrex, can also individually add in the slurry.Mainly improve resistance The temperature coefficient and voltage-resistent characteristic of slurry, to improve the properties of resistance slurry.
It is preferable to use Cu or its compounds, Mn or its compound, Ni or its compound, Nb for the inorganic additive2O5、 Sb2O3、ZrO2, it is contemplated that dispersibility and printing adaptability, the evaluation granularity of compound are preferably 0.1 ~ 5 μm, more preferably 0.3~0.8μm.When granularity is more than 5 μm, conference is crossed due to granularity, resistance is caused to form high current concentration in the point, influence resistance Whole voltage-resistent characteristic.
The composition of the organic carrier are as follows: resin 4% ~ 15%, organic additive 1% ~ 5%, organic solvent 80% ~ 95%.
The resin is one or more of rosin resin, ethyl cellulose, hydroxylated cellulose and methylcellulose, excellent Select rosin or ethyl cellulose.
The organic solvent is one or more of lipid, alcohols or ethers, preferably lipid or alcohols.
In the present invention, above-mentioned conductive powder, lead borosilicate glass powder and inorganic additive are dispersed in and pass through hybrid resin In solvent and the organic carrier that obtains, so that preparation has the slurry of fluid properties.
In embodiment, the preparation of raw material and evaluation method is as follows:
Conductive powder raw material used in embodiment is formed referring to table 1.
Table one: embodiment conductive powder raw material composition
The phosphate ester type organic of selection includes castor oil phosphate ester, isooctanol phosphate ester, oleyl alcohol phosphate ester, butanol phosphate ester One or more, the conductive phase powder completed to preparation are surface-treated.The mass ratio of inorganic agent and conductive powder is respectively as follows: Inorganic agent/ruthenic oxide=0.1 ~ 5:100, inorganic agent/ruthenic acid lead=0.1 ~ 3:100.
The preparation and evaluation method of lead borosilicate glass powder:
Each raw material is weighed according to mass ratio, the weighed raw material of institute is sufficiently mixed, mixed mixture is put into crucible, so It is put into 1200 DEG C~1400 DEG C of electric furnace, is melted afterwards, keep the temperature 30min~60min, melt and had no completely to compound Bubble exclude, the glass metal after fusing is poured into quenching in cold water, by granular glass ball milling to targeted particle size until, after ball milling Glass powder drying, broken, sieving, detection, packaging.
Glass powder is first cast into film laminator cylindric, carries out 600 DEG C~900 DEG C pre-sinterings, carried out later with DTA soft Change the test of point and the coefficient of expansion.
The evaluation method of resistance slurry:
Conductive powder, lead borosilicate glass powder, inorganic additive, organic carrier according to table 2 match, by three-high mill rolling it Afterwards, the test of slurry basic performance is carried out, wherein resolution chart is referring to Fig.1.Slurry is printed to by silk-screen printing to 96% aluminium oxide (25.4mm long × 25.4mm wide × 1mm is thick), figure Fig. 1 on substrate.Drying condition is 10 minutes at 150 DEG C, then in band It is sintered in formula sintering furnace with the speed of 120mm/min.After being sintered, full performance test, test result ginseng are carried out to substrate It is shown in Table 3.
Table 2: embodiment raw material proportioning
Embodiment 1
A kind of high-performance thick-film resistor paste composition includes the material of following mass parts, specifically:
Conductive powder: 2 parts of ruthenic oxide, 10 parts of ruthenic acid lead;
Lead borosilicate glass powder: 60 parts;
Inorganic additive: 5 parts;
Organic carrier: 23 parts;
Lead borosilicate glass powder is two kinds of glass, and wherein glass powder A is matched are as follows: Pb3O4 55%、CaO 18%、SiO2 23%、B2O3 4%, the group in slurry is divided into 39 parts, glass powder B proportion are as follows: Pb3O4 70%、SiO2 19%、B2O3 11%, the group in slurry is divided into 21 parts.
Inorganic additive group becomes Ta2O53%, Nb2O5 1%, CuO 0.5%, ZrO2 0.5%。
Organic carrier group becomes resin ethyl cellulose 15%, soybean lecithin 1%, terpinol 84%.
Embodiment 2
A kind of high-performance thick-film resistor paste composition includes the material of following mass parts, specifically:
Conductive powder: 4 parts of ruthenic oxide, 10 parts of ruthenic acid lead;
Lead borosilicate glass powder: 55 parts;
Inorganic additive: 4.5 parts;
Organic carrier: 24.5 parts;
Lead borosilicate glass powder is two kinds of glass, and wherein glass powder A is matched are as follows: Pb3O4 55%、CaO 18%、SiO2 23%、B2O3 4%, the group in slurry is divided into 33 parts, glass powder B proportion are as follows: Pb3O4 70%、SiO2 19%、B2O3 11%, the group in slurry is divided into 22 parts.
Inorganic additive group becomes Ta2O52.5%, Nb2O5 1%, CuO 0.5%, ZrO2 0.5%。
Organic carrier group becomes resin ethyl cellulose 15%, soybean lecithin 5%, terpinol 80%.
Embodiment 3
A kind of high-performance thick-film resistor paste composition includes the material of following mass parts, specifically:
Conductive powder: 4 parts of ruthenic oxide, 16 parts of ruthenic acid lead;
Lead borosilicate glass powder: 50 parts;
Inorganic additive: 4 parts;
Organic carrier: 26 parts;
Lead borosilicate glass powder is two kinds of glass, and wherein glass powder A is matched are as follows: Pb3O4 55%、CaO 18%、SiO2 23%、B2O3 4%, the group in slurry is divided into 30 parts, glass powder B proportion are as follows: Pb3O4 70%、SiO2 19%、B2O3 11%, the group in slurry is divided into 20 parts.
Inorganic additive group becomes Ta2O52.5%, Nb2O5 0.5%, CuO 0.5%, ZrO2 0.5% 。
Organic carrier group becomes resin ethyl cellulose 12%, soybean lecithin 3%, terpinol 85%.
Embodiment 4
A kind of high-performance thick-film resistor paste composition includes the material of following mass parts, specifically:
Conductive powder: 8 parts of ruthenic oxide, 16 parts of ruthenic acid lead;
Lead borosilicate glass powder: 45 parts;
Inorganic additive: 3.5 parts;
Organic carrier: 27.5 parts;
Lead borosilicate glass powder is two kinds of glass, and wherein glass powder A is matched are as follows: Pb3O4 55%、CaO 18%、SiO2 23%、B2O3 4%, the group in slurry is divided into 25 parts, glass powder B proportion are as follows: Pb3O4 70%、SiO2 19%、B2O3 11%, the group in slurry is divided into 20 parts.
Inorganic additive group becomes Ta2O52%, Nb2O5 0.5%, CuO 0.5%, ZrO2 0.5%。
Organic carrier group becomes resin ethyl cellulose 10%, soybean lecithin 3%, terpinol 87%.
Embodiment 5
A kind of high-performance thick-film resistor paste composition includes the material of following mass parts, specifically:
Conductive powder: 12 parts of ruthenic oxide, 16 parts of ruthenic acid lead;
Lead borosilicate glass powder: 40 parts;
Inorganic additive: 3 parts;
Organic carrier: 29 parts;
Lead borosilicate glass powder is two kinds of glass, and wherein glass powder A is matched are as follows: Pb3O4 55%、CaO 18%、SiO2 23%、B2O3 4%, the group in slurry is divided into 20 parts, glass powder B proportion are as follows: Pb3O4 70%、SiO2 19%、B2O3 11%, the group in slurry is divided into 20 parts.
Inorganic additive group becomes Ta2O52%, CuO 0.5%, ZrO2 0.5%。
Organic carrier group becomes resin ethyl cellulose 9%, soybean lecithin 4%, terpinol 87%.
Embodiment 6
A kind of high-performance thick-film resistor paste composition includes the material of following mass parts, specifically:
Conductive powder: 12 parts of ruthenic oxide, 20 parts of ruthenic acid lead;
Lead borosilicate glass powder: 35 parts;
Inorganic additive: 3 parts;
Organic carrier: 30 parts;
Lead borosilicate glass powder is two kinds of glass, and wherein glass powder A is matched are as follows: Pb3O4 55%、CaO 18%、SiO2 23%、B2O3 4%, the group in slurry is divided into 15 parts, glass powder B proportion are as follows: Pb3O4 70%、SiO2 19%、B2O3 11%, the group in slurry is divided into 20 parts.
Inorganic additive group becomes Ta2O52%, CuO 0.5%, ZrO2 0.5%。
Organic carrier group becomes resin ethyl cellulose 8%, soybean lecithin 4%, terpinol 88%.
Embodiment 7
A kind of high-performance thick-film resistor paste composition includes the material of following mass parts, specifically:
Conductive powder: 16 parts of ruthenic oxide, 20 parts of ruthenic acid lead;
Lead borosilicate glass powder: 30 parts;
Inorganic additive: 4 parts;
Organic carrier: 30 parts;
Lead borosilicate glass powder is two kinds of glass, and wherein glass powder A is matched are as follows: Pb3O4 55%、CaO 18%、SiO2 23%、B2O3 4%, the group in slurry is divided into 15 parts, glass powder B proportion are as follows: Pb3O4 70%、SiO2 19%、B2O3 11%, the group in slurry is divided into 15 parts.
Inorganic additive group becomes Ta2O50.5%, Nb2O5 0.5%, CuO 3%, ZrO2 0.5%。
Organic carrier group becomes resin ethyl cellulose 6%, soybean lecithin 3%, terpinol 91%.
Embodiment 8
A kind of high-performance thick-film resistor paste composition includes the material of following mass parts, specifically:
Conductive powder: 16 parts of ruthenic oxide, 24 parts of ruthenic acid lead;
Lead borosilicate glass powder: 25 parts;
Inorganic additive: 4.5 parts;
Organic carrier: 30.5 parts;
Lead borosilicate glass powder is two kinds of glass, and wherein glass powder A is matched are as follows: Pb3O4 55%、CaO 18%、SiO2 23%、B2O3 4%, the group in slurry is divided into 10 parts, glass powder B proportion are as follows: Pb3O4 70%、SiO2 19%、B2O3 11%, the group in slurry is divided into 15 parts.
Inorganic additive group becomes Ta2O50.5%, Nb2O5 0.5%, CuO 3.5%, ZrO2 0.5%。
Organic carrier group becomes resin ethyl cellulose 5%, soybean lecithin 5%, terpinol 90%.
Embodiment 9
A kind of high-performance thick-film resistor paste composition includes the material of following mass parts, specifically:
Conductive powder: 20 parts of ruthenic oxide, 24 parts of ruthenic acid lead;
Lead borosilicate glass powder: 20 parts;
Inorganic additive: 5 parts;
Organic carrier: 31 parts;
Lead borosilicate glass powder is two kinds of glass, and wherein glass powder A is matched are as follows: Pb3O4 55%、CaO 18%、SiO2 23%、B2O3 4%, the group in slurry is divided into 5 parts, glass powder B proportion are as follows: Pb3O4 70%、SiO2 19%、B2O3 11%, the group in slurry is divided into 15 Part.
Inorganic additive group becomes Nb2O5 1%, CuO 3.5%, ZrO2 0.5%。
Organic carrier group becomes resin ethyl cellulose 4%, soybean lecithin 1%, terpinol 95%.
Seen from table 3, traditional handicraft conductive paste material is compared, the present invention is by organic agent treated conductive phase material The resistance slurry for expecting preparation has the advantages that TCR narrow range, static discharge variation small, Steadydamp-heat, good working life, makes electricity Resistance paste has the stable feature of reliable performance.
Table 3: resistance slurry specific performance evaluation result
The contents of the present invention are not limited to cited by embodiment, and those of ordinary skill in the art are right by reading description of the invention Any equivalent transformation that technical solution of the present invention is taken, all are covered by the claims of the invention.

Claims (6)

1. a kind of high-performance thick-film resistor paste composition, it is characterised in that:
It include the material of following mass parts, specifically:
Conductive powder: 12 ~ 44 parts;
Lead borosilicate glass powder: 20 ~ 60 parts;
Inorganic additive: 0.5 ~ 5 part;
Organic carrier: 35 ~ 45 parts;
The above material amounts to 100 parts;
The conductive powder is one in the ruthenic oxide or ruthenic acid lead being surface-treated using phosphoric acid lipid organic agent Kind or two kinds of mixing.
2. a kind of high-performance thick-film resistor paste composition according to claim 1, it is characterised in that:
The composition of the conductive powder are as follows: ruthenic oxide 40 ~ 100%, ruthenic acid lead 20 ~ 100%;The composition of the ruthenic oxide are as follows: Specific surface area is 5m2/g~10m2The ruthenic oxide 25% ~ 45% of/g, specific surface area 75m2/g~95m2The ruthenic oxide 40% of/g ~ 75%;The composition of the ruthenic acid lead are as follows: specific surface area made from chemical synthesis is 8m2/g~12m2The ruthenic acid lead 35% ~ 45% of/g, The ruthenic acid lead 40% ~ 75% that partial size made from roasting method is 1 μm ~ 1.3 μm.
3. a kind of high-performance thick-film resistor paste composition according to claim 1 or 2, it is characterised in that:
The lead borosilicate glass powder includes Pb-B-Ca-Si system and Pb-B-Si system, wherein Pb-B-Ca-Si system matter It is 25 ~ 70% that amount score, which is 30 ~ 65%, Pb-B-Si system quality score,;
The inorganic additive is PbO, Pb3O4、B2O3、CaO、CaCO3、Al2O3, ZnO, Cu or its compound, Mn or its chemical combination Object, Fe or its compound, Ta or its compound, Ni or its compound, Nb2O5、Sb2O3、ZrO2、SiO2One of or it is a variety of mixed It closes;
The composition of the organic carrier are as follows: resin 4% ~ 15%, organic additive 1% ~ 5%, organic solvent 80% ~ 95%.
4. a kind of high-performance thick-film resistor paste composition according to claim 3, it is characterised in that:
The Pb-B-Ca-Si system particle size of glass powder range is 1.8 μm ~ 2.0 μm, and glass softening point is 580 ~ 620 DEG C, and heat is swollen Swollen coefficient is 6.5 × 10-6 ~7.5 × 10-6M/m DEG C, composition are as follows: Pb3O440% ~ 60%, CaO 15% ~ 20%, SiO2 18%~ 25%, B2O3 3%~10%;The Pb-B--Si system particle size of glass powder range be 0.8 μm ~ 1.0 μm, glass softening point be 480 ~ 510 DEG C, thermal expansion coefficient is 7.0 × 10-6~8.0 × 10-6 M/m DEG C, composition are as follows: Pb3O450% ~ 75%, SiO2 18%~ 25%, B2O3 5%~15%。
5. a kind of high-performance thick-film resistor paste composition according to claim 4, it is characterised in that:
The resin is rosin resin, ethyl cellulose, hydroxylated cellulose or methylcellulose;The organic solvent be lipid, One or more of alcohols or ethers.
6. a kind of high-performance thick-film resistor paste composition according to claim 5, it is characterised in that:
The conductive powder needs to be surface-treated with organic agent, the mass ratio of inorganic agent and conductive powder are as follows: processing Agent/ruthenic oxide=0.1 ~ 5:100, inorganic agent/ruthenic acid lead=0.1 ~ 3:100;Organic agent is phosphate ester type organic, fusing point Less than 300 DEG C.
CN201811518690.4A 2018-12-12 2018-12-12 A kind of high-performance thick-film resistor paste composition Withdrawn CN109637695A (en)

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Cited By (10)

* Cited by examiner, † Cited by third party
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CN112992401A (en) * 2021-04-25 2021-06-18 西安宏星电子浆料科技股份有限公司 Resistance paste capable of realizing lossless resistance adjustment
CN113053560A (en) * 2021-06-01 2021-06-29 西安宏星电子浆料科技股份有限公司 Resistance paste for high-performance thick film resistor
CN113393955A (en) * 2021-08-13 2021-09-14 西安宏星电子浆料科技股份有限公司 LTCC co-fired matching type resistance paste
CN113470864A (en) * 2021-09-01 2021-10-01 西安宏星电子浆料科技股份有限公司 Thick film resistor paste with low size effect
CN113793716A (en) * 2021-11-17 2021-12-14 西安宏星电子浆料科技股份有限公司 Low-voltage coefficient resistance paste
CN113793715A (en) * 2021-11-16 2021-12-14 西安宏星电子浆料科技股份有限公司 Low-temperature coefficient resistance paste
CN113851250A (en) * 2021-11-29 2021-12-28 西安宏星电子浆料科技股份有限公司 Overload-voltage-resistant resistance paste and preparation method and application thereof
CN113851249A (en) * 2021-11-29 2021-12-28 西安宏星电子浆料科技股份有限公司 Low-current noise type resistance paste and preparation method and application thereof
CN114121335A (en) * 2022-01-24 2022-03-01 西安宏星电子浆料科技股份有限公司 Low-contact-resistance type resistance paste
CN115620934A (en) * 2022-12-02 2023-01-17 西安宏星电子浆料科技股份有限公司 Resistance paste with stable temperature coefficient for chip resistor

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JP2018049900A (en) * 2016-09-21 2018-03-29 住友金属鉱山株式会社 Resistance paste and resistor produced by firing the same
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CN112992401A (en) * 2021-04-25 2021-06-18 西安宏星电子浆料科技股份有限公司 Resistance paste capable of realizing lossless resistance adjustment
CN113053560A (en) * 2021-06-01 2021-06-29 西安宏星电子浆料科技股份有限公司 Resistance paste for high-performance thick film resistor
CN113393955A (en) * 2021-08-13 2021-09-14 西安宏星电子浆料科技股份有限公司 LTCC co-fired matching type resistance paste
CN113393955B (en) * 2021-08-13 2021-11-16 西安宏星电子浆料科技股份有限公司 LTCC co-fired matching type resistance paste
CN113470864A (en) * 2021-09-01 2021-10-01 西安宏星电子浆料科技股份有限公司 Thick film resistor paste with low size effect
CN113793715A (en) * 2021-11-16 2021-12-14 西安宏星电子浆料科技股份有限公司 Low-temperature coefficient resistance paste
CN113793715B (en) * 2021-11-16 2022-02-25 西安宏星电子浆料科技股份有限公司 Low-temperature coefficient resistance paste
CN113793716A (en) * 2021-11-17 2021-12-14 西安宏星电子浆料科技股份有限公司 Low-voltage coefficient resistance paste
CN113793716B (en) * 2021-11-17 2022-02-25 西安宏星电子浆料科技股份有限公司 Low-voltage coefficient resistance paste
CN113851250A (en) * 2021-11-29 2021-12-28 西安宏星电子浆料科技股份有限公司 Overload-voltage-resistant resistance paste and preparation method and application thereof
CN113851249A (en) * 2021-11-29 2021-12-28 西安宏星电子浆料科技股份有限公司 Low-current noise type resistance paste and preparation method and application thereof
CN114121335A (en) * 2022-01-24 2022-03-01 西安宏星电子浆料科技股份有限公司 Low-contact-resistance type resistance paste
CN114121335B (en) * 2022-01-24 2022-04-19 西安宏星电子浆料科技股份有限公司 Low-contact-resistance type resistance paste
CN115620934A (en) * 2022-12-02 2023-01-17 西安宏星电子浆料科技股份有限公司 Resistance paste with stable temperature coefficient for chip resistor
CN115620934B (en) * 2022-12-02 2023-04-07 西安宏星电子浆料科技股份有限公司 Resistance paste with stable temperature coefficient for chip resistor

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