CN109634527B - 一种ssd内实现的闪存寿命预测方法 - Google Patents
一种ssd内实现的闪存寿命预测方法 Download PDFInfo
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- CN109634527B CN109634527B CN201811514746.9A CN201811514746A CN109634527B CN 109634527 B CN109634527 B CN 109634527B CN 201811514746 A CN201811514746 A CN 201811514746A CN 109634527 B CN109634527 B CN 109634527B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0614—Improving the reliability of storage systems
- G06F3/0616—Improving the reliability of storage systems in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
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CN109634527A CN109634527A (zh) | 2019-04-16 |
CN109634527B true CN109634527B (zh) | 2020-06-09 |
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Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109830255B (zh) * | 2018-12-17 | 2020-11-17 | 武汉忆数存储技术有限公司 | 一种基于特征量的闪存寿命预测方法、系统及存储介质 |
KR102601152B1 (ko) * | 2019-05-10 | 2023-11-13 | 에스케이하이닉스 주식회사 | 메모리 컨트롤러 및 그 동작 방법 |
CN110837477B (zh) * | 2019-10-08 | 2022-09-09 | 置富科技(深圳)股份有限公司 | 一种基于寿命预测的存储系统损耗均衡方法及装置 |
CN112684973A (zh) * | 2019-10-18 | 2021-04-20 | 建兴储存科技股份有限公司 | 具有固态储存器的服务器系统及其相关控制方法 |
CN110851079B (zh) * | 2019-10-28 | 2021-10-15 | 置富科技(深圳)股份有限公司 | 一种自适应的存储设备损耗均衡方法及系统 |
CN111078439A (zh) * | 2019-10-31 | 2020-04-28 | 苏州浪潮智能科技有限公司 | 一种固态硬盘寿命预测方法和装置 |
CN111142796A (zh) * | 2019-12-20 | 2020-05-12 | 北京浪潮数据技术有限公司 | 一种ssd寿命预测方法、装置、设备及可读存储介质 |
CN112085107A (zh) * | 2020-09-10 | 2020-12-15 | 苏州大学 | 基于三维闪存存储结构可预测闪存块使用寿命方法及系统 |
CN112817523B (zh) * | 2021-01-19 | 2021-09-07 | 置富科技(深圳)股份有限公司 | 存储介质可靠性等级判断方法及系统、存储介质、设备 |
CN112817525A (zh) * | 2021-01-19 | 2021-05-18 | 置富科技(深圳)股份有限公司 | 闪存芯片可靠性等级预测方法、装置及存储介质 |
CN112908399B (zh) * | 2021-02-05 | 2022-01-18 | 置富科技(深圳)股份有限公司 | 闪存的异常检测方法、装置、计算机设备及存储介质 |
CN112908391B (zh) * | 2021-02-08 | 2022-04-12 | 置富科技(深圳)股份有限公司 | 一种基于数学模型的闪存分类方法及装置 |
CN113257332B (zh) * | 2021-04-08 | 2024-05-17 | 置富科技(深圳)股份有限公司 | 一种闪存的有效性预测方法、装置及存储介质 |
CN113419682B (zh) * | 2021-06-30 | 2022-06-03 | 湖南国科微电子股份有限公司 | 一种数据处理方法、装置和计算机闪存设备 |
CN116090388B (zh) * | 2022-12-21 | 2024-05-17 | 海光信息技术股份有限公司 | 芯片内部电压预测模型生成方法、预测方法及相关装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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FR3045183B1 (fr) * | 2015-12-15 | 2018-01-19 | Commissariat Energie Atomique | Procede de prediction d'une donnee a precharger dans une memoire cache |
CN107967928B (zh) * | 2017-10-18 | 2020-06-26 | 武汉忆数存储技术有限公司 | 一种基于数学模型的闪存芯片寿命预测方法 |
CN108133732B (zh) * | 2017-12-20 | 2021-05-25 | 北京兆易创新科技股份有限公司 | 闪存芯片的性能测试方法、装置、设备及存储介质 |
CN108766496B (zh) * | 2018-05-23 | 2020-10-16 | 武汉忆数存储技术有限公司 | 一种在线动态预测闪存芯片寿命的方法及装置 |
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Effective date of registration: 20210726 Address after: 518000 Shenzhen, Longgang, Guangdong Bantian street, Jihua Road, long Bi industrial city 13, 2 level. Patentee after: Futurepath Technology (Shenzhen) Co.,Ltd. Address before: 430074 Hubei Province, Wuhan city Hongshan District Luoyu Road No. 1037 Patentee before: HUAZHONG University OF SCIENCE AND TECHNOLOGY |
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Denomination of invention: A flash memory life prediction method implemented in SSD Effective date of registration: 20220325 Granted publication date: 20200609 Pledgee: Industrial and Commercial Bank of China Limited Shenzhen gaoxinyuan sub branch Pledgor: FUTUREPATH TECHNOLOGY Co.,Ltd. Registration number: Y2022980003211 |