CN109599345B - Method for preventing metal connecting wire of heterojunction bipolar transistor from being easily broken - Google Patents
Method for preventing metal connecting wire of heterojunction bipolar transistor from being easily broken Download PDFInfo
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- CN109599345B CN109599345B CN201811284929.6A CN201811284929A CN109599345B CN 109599345 B CN109599345 B CN 109599345B CN 201811284929 A CN201811284929 A CN 201811284929A CN 109599345 B CN109599345 B CN 109599345B
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- dielectric material
- bipolar transistor
- heterojunction bipolar
- photosensitive low
- metal
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- 239000002184 metal Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000003989 dielectric material Substances 0.000 claims abstract description 39
- 239000003990 capacitor Substances 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 238000001883 metal evaporation Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 241001391944 Commicarpus scandens Species 0.000 claims description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
The invention provides a method for preventing a metal connecting wire of a heterojunction bipolar transistor from being easily broken, which comprises the following steps: 1) coating a layer of photosensitive low dielectric material on the upper surface of the heterojunction bipolar transistor; 2) covering a light shield on the photosensitive low dielectric material, wherein the light shield is provided with holes at positions corresponding to a bottom capacitor area and a base platform area of the heterojunction bipolar transistor; 3) exposing and developing the photosensitive low dielectric material, and removing the photosensitive low dielectric material on the bottom capacitor area and the base platform area; 4) heating the exposed and developed photosensitive low-dielectric material to make the appearance trend of the photosensitive low-dielectric material slow; 5) then, opening holes in a capacitor area and other areas of the heterojunction bipolar transistor where metal connecting wires are needed by the heterojunction bipolar transistor through a developing and etching process; 6) and covering a layer of metal coating film on the device area to be connected by metal evaporation.
Description
Technical Field
The present invention relates to an electronic component, and more particularly to a heterojunction bipolar transistor.
Technical Field
Some advanced processes make the base mesa of the heterojunction bipolar transistor steeper or even shrink the BP below BC in order to reduce the capacitance between the base and the collector and improve the device characteristics of the heterojunction bipolar transistor
However, the above method can affect the metal connection, especially the evaporation process, and the metal after evaporation can be broken due to too steep morphology, as shown in fig. 1.
Disclosure of Invention
The invention aims to solve the main technical problem of providing a method for preventing a metal connecting wire of a heterojunction bipolar transistor from being easily broken, and solves the problems in the background technology.
In order to solve the technical problem, the invention provides a method for preventing a metal connecting wire of a heterojunction bipolar transistor from being broken easily, which comprises the following steps:
1) coating a layer of photosensitive low dielectric material on the upper surface of the heterojunction bipolar transistor;
2) covering a light shield on the photosensitive low dielectric material, wherein the light shield is provided with holes at positions corresponding to a bottom capacitor area and a base platform area of the heterojunction bipolar transistor;
3) exposing and developing the photosensitive low dielectric material, and removing the photosensitive low dielectric material on the capacitor region and the base platform region;
4) heating the exposed and developed photosensitive low-dielectric material to make the appearance trend of the photosensitive low-dielectric material slow;
5) then, a developing etching process is carried out to open holes in a capacitor area and other areas of the heterojunction bipolar transistor where metal connecting wires are needed
6) And covering a metal coating film on the device area to be connected by metal evaporation, wherein the metal coating film comprises the positions of the capacitor area and the heterojunction bipolar transistor area and the upper surface of the photosensitive low-dielectric material after exposure and development.
In a preferred embodiment: the photosensitive low dielectric material includes, but is not limited to benzocyclobutene.
In a preferred embodiment: and a step of removing residues at the exposed and developed openings of the photosensitive low-dielectric material by using oxidation plasma is also included between the step 4 and the step 5.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
according to the method for preventing the metal connecting line of the heterojunction bipolar transistor from being broken easily, the photosensitive low dielectric material is coated on the upper surface of the heterojunction bipolar transistor, the photosensitive low dielectric material is subjected to planarization treatment, and then metal evaporation is performed on the photosensitive low dielectric material, so that the situation that the metal coating film is broken due to too steep appearance is avoided.
Drawings
FIG. 1 is a cross-sectional view of a prior art heterojunction bipolar transistor metal link fracture;
fig. 2-6 are flow charts of the implementation of the method for making the metal connection of the heterojunction bipolar transistor not easy to break in the preferred embodiment of the invention.
Detailed Description
In order to make the technical solution of the present invention clearer, the present invention will now be described in further detail with reference to the following embodiments and accompanying drawings:
the invention provides a method for preventing a metal connecting wire of a heterojunction bipolar transistor from being broken easily, which comprises the following steps:
1) coating a layer of photosensitive low-dielectric material 3 on the upper surface of the heterojunction bipolar transistor 2; the photosensitive low dielectric material 3 includes, but is not limited to benzocyclobutene, as shown in fig. 2.
2) Covering a light shield on the photosensitive low dielectric material, wherein the light shield is provided with holes at positions corresponding to a bottom capacitor area and a base platform area of the heterojunction bipolar transistor;
3) exposing and developing the photosensitive low dielectric material 3, and removing the photosensitive low dielectric material 3 on the bottom capacitor region 21 and the base region 22; as shown in fig. 3;
4) heating the exposed and developed photosensitive low-dielectric material to make the appearance trend of the photosensitive low-dielectric material slow; as shown in fig. 4.
5) Then, by a developing and etching process, openings 23 are formed in the capacitor region and the other regions of the heterojunction bipolar transistor 2 where metal connecting lines need to be formed, as shown in fig. 5;
6) and covering a metal coating film 4 on the device area to be connected by metal evaporation, wherein the metal coating film comprises the positions of the capacitor area and the heterojunction bipolar transistor area and the upper surface of the photosensitive low-dielectric material after exposure and development, and the structure is shown in fig. 6.
In this embodiment, a step of removing residues at the exposed and developed openings of the photosensitive low dielectric material by using an oxidizing plasma is further included between the step 4 and the step 5.
According to the method for preventing the metal connecting line of the heterojunction bipolar transistor from being broken easily, the upper surface of the heterojunction bipolar transistor is coated with the photosensitive low dielectric material, the photosensitive low dielectric material is subjected to planarization treatment, and then metal evaporation is carried out on the photosensitive low dielectric material, so that the situation that the metal coating film is broken due to too steep appearance is avoided.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (3)
1. A method for preventing a metal connecting wire of a heterojunction bipolar transistor from being broken easily is characterized by comprising the following steps:
1) coating a layer of photosensitive low dielectric material on the upper surface of the heterojunction bipolar transistor;
2) covering a light shield on the photosensitive low dielectric material, wherein the light shield is provided with holes at positions corresponding to a bottom capacitor area and a base platform area of the heterojunction bipolar transistor;
3) exposing and developing the photosensitive low dielectric material, and removing the photosensitive low dielectric material on the bottom capacitor region and the base region;
4) heating the exposed and developed photosensitive low-dielectric material to make the appearance trend of the photosensitive low-dielectric material slow;
5) then, opening holes in a capacitor area and other areas of the heterojunction bipolar transistor where metal connecting wires are needed by the heterojunction bipolar transistor through a developing and etching process;
6) and covering a metal coating film on the device area to be connected by metal evaporation, wherein the metal coating film comprises the positions of the capacitor area and the heterojunction bipolar transistor area and the upper surface of the photosensitive low-dielectric material after exposure and development.
2. The method of claim 1, wherein the metal connection line of the heterojunction bipolar transistor is not easy to break, and the method comprises the following steps: the photosensitive low dielectric material comprises benzocyclobutene.
3. The method of claim 1, wherein the metal connection line of the heterojunction bipolar transistor is not easy to break, and the method comprises the following steps: and a step of removing residues at the exposed and developed openings of the photosensitive low-dielectric material by using oxidation plasma is also included between the step 4 and the step 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811284929.6A CN109599345B (en) | 2018-10-31 | 2018-10-31 | Method for preventing metal connecting wire of heterojunction bipolar transistor from being easily broken |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811284929.6A CN109599345B (en) | 2018-10-31 | 2018-10-31 | Method for preventing metal connecting wire of heterojunction bipolar transistor from being easily broken |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109599345A CN109599345A (en) | 2019-04-09 |
| CN109599345B true CN109599345B (en) | 2020-03-20 |
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| CN201811284929.6A Active CN109599345B (en) | 2018-10-31 | 2018-10-31 | Method for preventing metal connecting wire of heterojunction bipolar transistor from being easily broken |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4015756B2 (en) * | 1998-06-30 | 2007-11-28 | ユーディナデバイス株式会社 | Manufacturing method of semiconductor device |
| CN100524780C (en) * | 2006-10-27 | 2009-08-05 | 北京京东方光电科技有限公司 | TFT LCD array substrate structure and method for forming non-comformal insulation film and use |
| US8946779B2 (en) * | 2013-02-26 | 2015-02-03 | Freescale Semiconductor, Inc. | MISHFET and Schottky device integration |
| CN104867828B (en) * | 2015-04-28 | 2018-03-09 | 厦门市三安集成电路有限公司 | A kind of preparation method of GaAs based semiconductor device |
| CN108346620A (en) * | 2017-01-23 | 2018-07-31 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display device |
| CN107424978A (en) * | 2017-05-16 | 2017-12-01 | 杭州立昂东芯微电子有限公司 | Dielectric wire and preparation method thereof between a kind of compound semiconductor layer |
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