CN109597152A

CN109597152A - Narrowband reflection film

Info

Publication number: CN109597152A
Application number: CN201710933107.5A
Authority: CN
Inventors: 于甄; 张国臻; 夏振
Original assignee: Zhangjiagang Kangdexin Optronics Material Co Ltd
Current assignee: Zhangjiagang Kangdexin Optronics Material Co Ltd
Priority date: 2017-09-30
Filing date: 2017-09-30
Publication date: 2019-04-09
Anticipated expiration: 2037-09-30
Also published as: CN109597152B

Abstract

The present invention provides a kind of narrowband reflection films.It include: transparent substrate layer；Membrane system, including n high low-index material units are reflected, reflection membrane system includes that at least one film structure is │ (α₁Hβ₁Lα₂Hβ₂L...α_mHβ_mL) the membrane stack of │, wherein H indicates high refractive index material layer, and L indicates low refractive index material layer, and n, m are positive integer, and 3 < n≤150,3 < m≤50, m≤n, the α of the same membrane stack₁, α₂..., α_mAnd β_m..., β₂, β₁Meet the same gradation law on the same cosine waveform or sinusoidal waveform each independently；For low-index material unit α i-th high_iHβ_iL, 1≤i≤n, α_iIndicate that i-th of high refractive index material layer optical thickness accounts for the multiple of λ/4, β_iIndicate that i-th of low refractive index material layer optical thickness accounts for the multiple of λ/4, and reflection membrane system or transparent substrate layer are additionally provided with light absorber.

Description

Narrowband reflection film

Technical field

The present invention relates to optic film structure fields, in particular to a kind of narrowband reflection film.

Background technique

Existing reflectance coating uses to be coated in the face A of macromolecule PET base material, the mode of the face B plating metal aluminium, wherein the coating of the face A Using HUD fluorescent powder, coloring material, nanometer pelletized resin coating etc., HUD fluorescent powder, coloring material, nanometer pelletized resin bandwidth compared with Width, leads to that the gamut differences of optical device using reflectance coating, albefaction is serious, role's product effect is poor.At the same time, in the market anti- Penetrating film is mostly to end reflectance coating using all band that metal layer is reflected, and all-wave length reflection causes the product transmitance pole It is low, it is substantially opaque.And particular wavelength cut-off reflectance coating, because its reflected wavelength range is wider, so that transmitance is lost It is very big, become product translucent and with certain color substantially.And products of the present invention has transparency height, without white While changing, is substantially colorless, in multiple designated wavelength ranges, product has very high reflectivity, can be formed by display requirement Full-color reflection graphic patterns.

Therefore, a kind of reflectance coating that reflection bandwidth is relatively narrow, the optical effect of Lai Youhua optical device are needed at present.

Summary of the invention

The main purpose of the present invention is to provide a kind of narrowband reflection films, to solve the reflection of reflectance coating in the prior art The larger problem of bandwidth.

To achieve the goals above, according to an aspect of the invention, there is provided a kind of narrowband reflection film, comprising: transparent Substrate layer；Membrane system is reflected, including n high low-index material units, high low-index material unit stack gradually transparent substrate Layer a surface or two opposite surfaces on, each high low-index material unit include a high refractive index material layer and with Pairing a low refractive index material layer, reflection membrane system include at least one film structure be │ (α₁Hβ₁Lα₂Hβ₂L...α_mHβ_mL) the membrane stack of │, wherein H indicates high refractive index material layer, and L indicates low refractive index material layer, and n, m are positive integer, and 3 < n≤ 150,3 < m≤50, m≤n, the α in the same membrane stack₁, α₂..., α_mAnd β_m..., β₂, β₁Meet each independently same Same gradation law in a cosine waveform or sinusoidal waveform；For low-index material unit α i-th high_iHβ_iL, 1≤i≤ n,α_iIndicate that i-th of high refractive index material layer accounts for the multiple of λ/4, β along optical thickness on the direction vertical with transparent substrate layer_iTable Show that i-th low refractive index material layer accounts for the multiple of λ/4 along optical thickness on the direction vertical with transparent substrate layer, λ is membrane stack Supervisory wavelength, and reflect in membrane system or be additionally provided with light absorber in transparent substrate layer.

Further, in the above-mentioned same membrane stack, for low-index material unit α i-th high_iHβ_iL, high refractive index material The optical thickness of the bed of material is α_i* λ/4, the optical thickness of low refractive index material layer are β_i* λ/4, the refractive index of high refractive index material layer For N_H, the physical thickness of high refractive index material layer is D_H, then there is N_H*D_H=α_i*λ/4；The refractive index of low refractive index material layer is N_L, the physical thickness of low refractive index material layer is D_L, then there is N_L*D_L=β_i*λ/4；Wherein, α₁, α₂..., α_mAnd β_m..., β₂, β₁Meet each independently selected from range 0~2 π the same sinusoidal waveform or cosine waveform upper left semifocal chord (such as 0~ String between pi/2), lower-left semifocal chord (such as string between pi/2~π), upper right semifocal chord (such as string between the pi/2 of π~3) and the right side Same gradation law on lower semifocal chord (string between 3 pi/2s~2 π).

Further, when above-mentioned narrowband reflection film is using 455nm as supervisory wavelength, α_i, β_iValue range exist: 0.01≤α_i ≤ 3.2,0.01≤β_i≤ 3.2, it is preferable that 0.05≤α_i≤ 2.8,0.05≤β_i≤2.8；Preferably, 0.1≤α_i≤ 2.8, 0.1≤β_i≤2.8；It is further preferable that 0.2≤α_i≤ 2.7,0.2≤β_i≤2.7。

Further, the quantity of the high low-index material unit of above-mentioned membrane stack accounts for the high low-index material of reflection membrane system The 60~99% of the total quantity of unit.

Further, the physical thickness of above-mentioned high refractive index material layer be 1~400nm, preferably 10~150nm, preferably The physical thickness of low refractive index material layer is 1~400nm, preferably 10~150nm.

Further, the refractive index of above-mentioned high refractive index material layer is 1.5~5.0, preferably 1.65~3.0, low refraction The refractive index of rate material layer is 1.1~1.5, preferably 1.25~1.48.

Further, the refraction materials of above-mentioned high refractive index material layer and low refractive index material layer are formed each independently Selected from MgF₂、CaF₂, transition metal fluorides, ZnO, TiO₂、TiN、In₂O₃、SnO₃、Cr₂O₃、ZrO₂、Ta₂O₅、LaB₆、 NbO、 Nb₂O₃、Nb₂O₅、SiO₂、SiC、Si₃N₄、Al₂O₃, fluorine resin, in the resin containing hollow silica any one or it is more Kind.

Further, total number of plies of above-mentioned high refractive index material layer and low refractive index material layer is 12~60.

Further, the optical admittance of above-mentioned high low-index material unit is greater than 1.5 or 1 < A < 1.2, narrowband reflection Film can be with the width range reflection wavelength of 20~50nm in 380~1200nm range light.

Further, above-mentioned membrane stack further includes one or more layers adhesive layer, and the adjacent membrane stack in part is bonded by adhesive layer.

Further, above-mentioned adhesive layer be OCA glue-line or PSA glue-line, preferably adhesive layer with a thickness of 0.005~0.2mm.

Further, above-mentioned transparent substrate layer be pet layer, COP layers, COC layers, CPI layers, PMMA layers, PEN layers, PC layers or TAC layer, preferably clear substrate layer with a thickness of 1~50 μm.

Further, above-mentioned light absorber is arranged at least partly high refractive index material layer and/or at least partly low refraction In rate material layer, or reflection membrane system further includes one or more layers light absorption oxidant layer, light absorption oxidant layer and part high-index material Layer and/or low refractive index material layer are disposed adjacent.

Further, above-mentioned light absorber is selected from inorganic light absorber, organic light absorber and organic and inorganic compound light combination and inhales Any one or more in agent is received, preferably inorganic light absorber is metal oxide or metallic salt, wherein metal oxide It is copper, chromium, iron or cadmium with the metal in metallic salt, preferably organic light absorber is phthalocyanine, porphyrin or azo, organic and inorganic compound Light combination absorbent is phthalocyanine metal chelate, porphyrin metal chelate or azo-metal chelate.

According to another aspect of the present invention, a kind of narrowband reflection film, the representation of narrowband reflection film are as follows: Sub are provided │(α₁Hβ₁Lα₂Hβ₂L...α_mHβ_mL)^N0│ Air, wherein Sub represents transparent substrate layer, and Air represents atmosphere, and H is high refractive index material The bed of material, L are low refractive index material layer；One high refractive index material layer and a matching low refractive index material layer form one A high low-index material unit, m are natural number, and 3 m≤50 <；N0 indicates the quantity of membrane stack, 1≤N0 < 10；For i-th A high low-index material unit α_iHβ_iL, 1≤i≤n, α_iIndicate i-th of high refractive index material layer along vertical with transparent substrate layer Direction on optical thickness account for the multiples of λ/4, β_iIndicate i-th of low refractive index material layer along the direction vertical with transparent substrate layer Upper optical thickness accounts for the multiple of λ/4, and λ is the supervisory wavelength of membrane stack；α₁, α₂..., α_mAnd β_m..., β₂, β₁In meet it is same The part of same gradation law on sinusoidal waveform is sinusoidal alternation area；α₁, α₂..., α_mAnd β_m..., β₂, β₁In be unsatisfactory for The part of same gradation law on same sinusoidal waveform is sinusoidal optimization area or α₁, α₂..., α_mAnd β_m..., β₂, β₁ The middle part for meeting the same gradation law in same cosine waveform is cosine alternation area；α₁, α₂..., α_mAnd β_m..., β₂, β₁In to be unsatisfactory for the part of same gradation law in same cosine waveform be that cosine optimizes area,

Wherein, the sum of the high refractive index material layer and the quantity of low refractive index material layer in sinusoidal alternation area or cosine alternation area Account for 60~99% of the sum of quantity of high refractive index material layer and low refractive index material layer in narrowband reflection film, and reflect membrane system or Light absorber is additionally provided in person's transparent substrate layer.

Further, the α in above-mentioned cosine alternation area₁, α₂..., α_mThe upper left semifocal chord for meeting cosine waveform is incremented by, β₁, β₂..., β_mThe upper right semifocal chord for meeting cosine waveform successively decreases, and cosine optimization area is located at the both ends in cosine alternation area, and cosine optimizes α in area₁, α₂..., α_mWith one-to-one β₁, β₂..., β_mDifference be less than and the α in cosine alternation area₁With β₁Difference And α_mWith β_mDifference；Or the α in cosine alternation area₁, α₂..., α_mThe lower-left semifocal chord for meeting cosine waveform is incremented by, β₁, β₂..., β_mThe bottom right semifocal chord for meeting cosine waveform successively decreases, and cosine optimization area is located at the both ends in cosine alternation area, and cosine optimizes α in area₁, α₂..., α_mWith one-to-one β₁, β₂..., β_mDifference be less than and the α in cosine alternation area₁With β₁Difference And α_mWith β_mDifference.

Further, the α in above-mentioned sinusoidal alternation area₁, α₂..., α_mThe upper left semifocal chord for meeting institute's sine and cosine waveform is incremented by, β₁, β₂..., β_mThe upper right semifocal chord for meeting sinusoidal waveform successively decreases, and sinusoidal optimization area is located at the both ends in sinusoidal alternation area, and sinusoidal excellent Change the α in area₁, α₂..., α_mWith one-to-one β₁, β₂..., β_mDifference be less than and the α in sinusoidal alternation area₁With β₁Difference Value and α_mWith β_mDifference；Or the α in sinusoidal alternation area₁, α₂..., α_mThe lower-left semifocal chord for meeting sinusoidal waveform is incremented by, β₁, β₂..., β_mThe bottom right semifocal chord for meeting sinusoidal waveform successively decreases, and sinusoidal optimization area is located at the both ends in sinusoidal alternation area, and sinusoidal optimization α in area₁, α₂..., α_mWith one-to-one β₁, β₂..., β_mDifference be less than and the α in sinusoidal alternation area₁With β₁Difference And α_mWith β_mDifference.

Further, the high low-index material number of unit in above-mentioned each membrane stack is repaired by waveform compensation coefficient factor Decorations, factor are equal to α₁, α₂..., α_mAnd β_m..., β₂, β₁The cosine waveform respectively formed accounts for complete a quarter waveform Ratio, and work as α₁, α₂..., α_mAnd β_m..., β₂, β₁Independently meet upper left semifocal chord waveform, lower-left semifocal chord waveform, upper right half Factor is 1 when the complete a quarter waveform of one of string waveform and bottom right semifocal chord waveform, when factor is less than 1, respectively The high low-index material number of unit of compensation in membrane stack is less than or equal to the 1- of the high low-index material number of unit of membrane stack Factor times, and compensate in high low-index material unit, the optical thickness coefficient and low-refraction material of high refractive index material layer The optical thickness coefficient of the bed of material and and the deviation of the optical thickness coefficient in its cosine waveform for compensating be less than ± 20%.

It applies the technical scheme of the present invention, the distance between adjacent high refractive index layer and adjacent low refractive index material layer The distance between that is, the distance of wall, and according to Fabry-Perot interference principle, the distance of wall is λ/4 Interference reaches cosine wave property that is maximum, and transmitting according to the duality principle of light when multiple, and the period of cosine becomes larger, because This is │ (α by the way that film structure is arranged in reflection membrane system₁Hβ₁Lα₂Hβ₂L...α_mHβ_mL) the membrane stack of │, due to the height folding of membrane stack The optical thickness coefficient (i.e. α, β) for penetrating rate material layer and low refractive index material layer follows the regular alternation of cosine waveform, i.e., adjacent The distance between high refractive index layer and the distance between adjacent low refractive index material layer the regular alternation of cosine waveform is presented, Will make the interference effect of specific wavelength is enhanced, then the wavelength band that corresponding respective indices of refraction forms interference will be presented The trend to narrow, i.e., the range of light wavelengths that the membrane stack can make reflectivity sharp change occur largely narrow, to occur The effect of narrowband reflection.Meanwhile according to the variation of membrane stack number in narrowband reflection film, there is corresponding become in narrowband reflection peak number mesh Change.In addition, light absorber is additionally provided in reflection membrane system or in transparent substrate layer, to realize to the light of specific wavelength It absorbs.

Detailed description of the invention

The accompanying drawings constituting a part of this application is used to provide further understanding of the present invention, and of the invention shows Examples and descriptions thereof are used to explain the present invention for meaning property, does not constitute improper limitations of the present invention.In the accompanying drawings:

Fig. 1 shows the cross-section structure signal for the narrowband reflection film that a kind of preferred embodiment according to the present invention provides Figure；

Fig. 2 shows the cross-section structure signals for the narrowband reflection film that another preferred embodiment according to the present invention provides Figure；

Fig. 3 shows the cross-section structure signal for the narrowband reflection film that another preferred embodiment according to the present invention provides Figure；

Fig. 4 shows anti-to the narrowband of embodiment 1 using Essential Macleod Film Design software according to the present invention Penetrate the simulation test figure of the light reflective properties of film；

Fig. 5 shows the transmissivity optical system for testing system structure diagram of according to embodiments of the present invention 2 narrowband reflection film；

Fig. 6 shows the light reflectivity that the transmittance test result of according to embodiments of the present invention 2 narrowband reflection film obtains Figure；

Fig. 7 shows anti-to the narrowband of embodiment 3 using Essential Macleod Film Design software according to the present invention Penetrate the simulation test figure of the light reflective properties of film；

Fig. 8 shows anti-to the narrowband of embodiment 4 using Essential Macleod Film Design software according to the present invention Penetrate the simulation test figure of the light reflective properties of film；

Fig. 9 shows anti-to the narrowband of embodiment 5 using Essential Macleod Film Design software according to the present invention Penetrate the simulation test figure of the light reflective properties of film；

Figure 10 shows the narrowband using Essential Macleod Film Design software to embodiment 6 according to the present invention The simulation test figure of the light reflective properties of reflectance coating；

Figure 11 shows the narrowband using Essential Macleod Film Design software to embodiment 7 according to the present invention The simulation test figure of the light reflective properties of reflectance coating；

Figure 12 shows the narrowband using Essential Macleod Film Design software to comparative example 1 according to the present invention The simulation test figure of the light reflective properties of reflectance coating；And

Figure 13 shows the narrowband using Essential Macleod Film Design software to comparative example 2 according to the present invention The simulation test figure of the light reflective properties of reflectance coating.

Wherein, the above drawings include the following reference numerals:

10, transparent substrate layer；20, membrane stack；21, high refractive index material layer；22, low refractive index material layer；23, adhesive layer；

W₁, tungsten lamp；D₁, deuterium lamp；M₁~M₁₀, reflecting mirror；G, grating；S₁, entrance slit；S₂, exit slit；C, chopping the light tune Device processed；R, reference light colorimetric pool；S, sample light colorimetric pool；PMT, photomultiplier tube.

Specific embodiment

It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and embodiments.

Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Below Description only actually at least one exemplary embodiment be it is illustrative, never as to the present invention and its application or make Any restrictions.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise Under every other embodiment obtained, shall fall within the protection scope of the present invention.

It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root According to exemplary embodiments of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singular Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.

As the application background technique is analyzed, reflectance coating reflection bandwidth in the prior art is larger, causes using reflection The gamut differences of the optical device of film, albefaction is serious, role's product effect is poor, and in order to solve this problem, this application provides a kind of narrow Band reflectance coating, as shown in Figures 1 to 3, the narrowband reflection film include transparent substrate layer 10 and reflection membrane system, and reflection membrane system includes n High low-index material unit, high low-index material unit stack gradually transparent substrate layer 10 a surface or two it is opposite Surface on, each high low-index material unit includes a high refractive index material layer 21 and a paired low-refraction Material layer 22, reflection membrane system include that at least one film structure is │ (α₁Hβ₁Lα₂Hβ₂L...α_mHβ_mL) the membrane stack 20 of │, wherein H Indicate high refractive index material layer 21, L indicates low refractive index material layer 22, and n, m are positive integer, and 3 < n≤150,3 < m≤50, m ≤ n, the α in the same membrane stack 20₁, α₂..., α_mAnd β_m..., β₂, β₁Meet each independently the same cosine waveform or Same gradation law on sinusoidal waveform；For low-index material unit α i-th high_iHβ_iL, 1≤i≤n, α_iIndicate i-th A high refractive index material layer 21 optical thickness along the direction vertical with transparent substrate layer 10 accounts for the multiple of λ/4, β_iIt indicates i-th The optical thickness along the direction vertical with transparent substrate layer 10 of low refractive index material layer 22 accounts for the multiple of λ/4, and λ is the monitoring of membrane stack Wavelength, and reflect in membrane system or be additionally provided with light absorber in transparent substrate layer 10.

It should be noted that the above-mentioned sinusoidal waveform of the application and cosine waveform are standard sine waveform in coordinate system and remaining The variation tendency (being only limitted to variation tendency, specific value is not limited by quadrant and positive and negative values) of string waveform, i.e. sinusoidal waveform packet Symmetrically arranged upper semifocal chord and lower semifocal chord are included, upper semifocal chord includes upper left semifocal chord (such as string between 0~pi/2) and upper right semifocal chord (such as string between 3 pi/2s~2 π), lower semifocal chord include lower-left semifocal chord (such as string between pi/2~π) and bottom right semifocal chord (such as String between the pi/2 of π~3)；Cosine waveform includes symmetrically arranged left semifocal chord and right semifocal chord, and left semifocal chord is the string that successively decreases, right semifocal chord To be incremented by string, left semifocal chord includes upper left semifocal chord and lower-left semifocal chord, and right semifocal chord includes upper right semifocal chord and bottom right semifocal chord.

Since the difference that cosine waveform and sinusoidal waveform are phase generates.In order to express easily, below only with regard to cosine Waveform is illustrated.Currently in order to realizing narrowband reflection, the prior art is dedicated to increasing high refractive index material layer in reflection membrane system The selection of design and refractive material with the low refractive index material layer number of plies, present inventor have been surprisingly found that under study for action, when The thickness change of high refractive index material layer and low refractive index material layer for reflection peak bandwidth there are directly related property, be based on this Present inventor has made intensive studies the thickness change rule of high refractive index material layer and low refractive index material layer, concurrently The regular alternation that the optical thickness coefficient of existing high refractive index material layer and low refractive index material layer follows cosine waveform forms remaining String membrane stack has effect outstanding to the bandwidth for reducing reflection peak.Action principle therein, inventor think:

According to Fabry-Perot (Fabry-Perot) principle of interference, when the frequency of incident light meets its resonance condition, Its transmission spectrum will appear very high peak value, correspond to very high transmissivity.Assuming that interference strength is distributed:

I in formula₀For incident intensity；R is the energy reflectivity of reflecting surface；Phase difference of the δ between adjacent two coherent light, and enters Penetrate that light inclination angle is related, R+T=1 (R is the surface reflectivity of membrane system, and T is transmissivity).The distance between adjacent high refractive index layer And the distance between adjacent low refractive index material layer that is, wall distance, and according to Fabry-Perot interference original Reason, interference reaches cosine baud that is maximum, and transmitting according to the duality principle of light when the distance of wall is the multiple of λ/4 Property, the period of cosine becomes larger, therefore by reflection membrane system setting film structure be │ (α₁Hβ₁Lα₂Hβ₂L...α_mHβ_mL) the membrane stack 20 of │, due to membrane stack 20 high refractive index material layer 21 and low refractive index material layer 22 optical thickness coefficient (i.e. α, β) follow the regular alternation of cosine waveform, i.e., the distance between adjacent high refractive index layer and adjacent low-index material The regular alternation of cosine waveform is presented in the distance between layer, the interference effect of specific wavelength will be made to be enhanced, then right Respective indices of refraction is answered to form the trend that the wavelength band of interference narrows presentation, i.e. the membrane stack 20 can make reflectivity sharp change occur Range of light wavelengths largely narrow, to the effect of narrowband reflection occur, and then avoid reflection bandwidth and cause greatly Optical device gamut differences, albefaction is serious, defect of role's product effect difference.Meanwhile according to the variation of 20 number of membrane stack, narrowband is anti- It penetrates peak number mesh and corresponding variation occurs.In addition, light absorber is additionally provided in reflection membrane system or in transparent substrate layer, thus real The absorption to the light of specific wavelength is showed.

As long as the variation of the optical thickness coefficient of above-mentioned high refractive index material layer 21 and low refractive index material layer 22 follows remaining Same gradation law on string waveform, can be realized said effect, in a preferred embodiment of the present application, the same membrane stack In 20, for low-index material unit α i-th high_iHβ_iL, the optical thickness of high refractive index material layer 21 are α_i* λ/4, low folding The optical thickness for penetrating rate material layer 22 is β_i* λ/4, the refractive index of high refractive index material layer 21 are N_H, high refractive index material layer 21 Physical thickness is D_H, then there is N_H*D_H=α_i*λ/4；The refractive index of low refractive index material layer (22) is N_L, low refractive index material layer 22 physical thickness is D_L, then there is N_L*D_L=β_i*λ/4；Wherein α₁, α₂..., α_mAnd β_m..., β₂, β₁It is full each independently Foot is selected from range in the same sinusoidal waveform of 0~2 π and upper left semifocal chord, lower-left semifocal chord, upper right semifocal chord and the bottom right of cosine waveform Same gradation law on semifocal chord.Above-mentioned each optical thickness coefficient follows four semifocal chords of the same string wave within the above range Waveform changing rule, the difference of obtained optical thickness can be such that above-mentioned narrowband effect preferably sends out in relatively narrow range It waves；It and is not in half-wave hole common in optical thin film design (often in band logical area in the practical preparation of optical filter There is a reflection peak, commonly referred to as half-wave hole at half of the reflection with central wavelength in domain, also having it is referred to as optical filter Half-wave falls).

Above-mentioned supervisory wavelength is determined with the lambda1-wavelength of the use environment of membrane stack, for example selects 550nm as visible The supervisory wavelength of light can specifically be selected, herein not using 750nm as the supervisory wavelength of infrared light according to the prior art It repeats again.

Be easier in order to obtain realize physical thickness and control narrowband reflection film total physical thickness, narrowband reflection film with When 455nm is supervisory wavelength, α_i, β_iValue range exist: 0.01≤α_i≤ 3.2,0.01≤β_i≤ 3.2, preferably 0.05≤α_i ≤ 2.8,0.05≤β_i≤ 2.8, further preferred 0.1≤α_i≤ 2.8,0.1≤β_i≤2.8；It is more highly preferred to 0.2≤α_i≤ 2.7, 0.2≤β_i≤2.7。

In the narrowband reflection film design of the application, in order to enable the hardness of reflection membrane system and transparent substrate layer 10, attachment Property etc. it is more preferable, generally before membrane stack 20 be set can in transparent substrate layer 10 setting transition high low-index layer, Huo Zhewei The adaptability of the adjacent membrane stack 20 of raising, can also be arranged transition zone, for example, 10 upper limit of transparent substrate layer setting refractive index compared with High material layer is as antireflection layer.High low-refraction in order to guarantee the narrow bandization effect of membrane stack 20, in preferably above-mentioned membrane stack 20 The quantity of material cell accounts for the 60~99% of the total quantity of the high low-index material unit of reflection membrane system.

Optical filter, the isostructural requirement of anti false film in view of the narrowband reflection film application of the application, preferably above-mentioned high folding The physical thickness for penetrating rate material layer 21 is 1~400nm, preferably 10~150nm, and the preferably physics of low refractive index material layer 22 is thick Degree is 1~400nm, preferably 10~150nm.

The refractive index size of above-mentioned high refractive index material layer 21 and low refractive index material layer 22 can be with reference in the prior art Making the size of the refraction materials of reflectance coating, the refractive index of high refractive index material layer 21 is 1.5~5.0, preferably 1.65~ 3.0, the refractive index of low refractive index material layer 22 is 1.1~1.5, preferably 1.25~1.48.

The refraction materials for forming the high refractive index material layer 21 and low refractive index material layer 22 with above-mentioned refractive index can To be selected in common refraction materials from the prior art, high refractive index material layer 21 and low refractive index material layer are formed 22 refraction materials are each independently selected from MgF₂、CaF₂, transition metal fluorides, ZnO, TiO₂、TiN、In₂O₃、SnO₃、 Cr₂O₃、ZrO₂、Ta₂O₅、LaB₆、NbO、Nb₂O₃、Nb₂O₅、SiO₂、SiC、Si₃N₄、Al₂O₃, fluorine resin, contain hollow titanium dioxide Any one or more in the resin of silicon.

In addition, in order to improve reflectance coating to the reflectivity of target wavelength, preferably high refractive index material layer 21 and low-refraction Total number of plies of material layer 22 is 12~60.

Preferably, the optical admittance of above-mentioned high low-index material unit is greater than 1.5 or 1 < A < 1.2, narrowband reflection film It can be with the width range reflection wavelength of 20~50nm in 380~1200nm range light (A indicates optical admittance).

Each high refractive index material layer 21 and low refractive index material layer 22 in the membrane stack 20 of the application can using coating or The mode of sputtering is formed, and production method is limited to, when the number of plies of high refractive index material layer 21 and low refractive index material layer 22 is more When, can in different transparent substrate layers 10 setting unit high refractive index material layer 21 and low refractive index material layer 22, so Afterwards again by two transparent substrate layers 10 high refractive index material layer 21 and low refractive index material layer 22 be combined, i.e., such as Fig. 2 Shown, preferably above-mentioned membrane stack 20 further includes one or more layers adhesive layer 23, and the adjacent membrane stack 20 in part is bonded by adhesive layer 23. After gluing, extra transparent substrate layer 10 can retain or remove, and preferably remove it.

In order to avoid adhesive layer 23 to generate unnecessary influence to light as far as possible, preferably above-mentioned adhesive layer 23 is OCA glue Layer or PSA glue-line, further preferred adhesive layer 23 with a thickness of 0.005~0.2mm.Make it both be able to satisfy bonding to require, there is guarantor Demonstrate,prove its enough light transmittance.

In a kind of preferred embodiment of the application, above-mentioned transparent substrate layer 10 is pet layer, COP layers, COC layers, CPI Layer, PMMA layers, PEN layers, PC layers or TAC layer；Preferably clear substrate layer 10 with a thickness of 1~50 μm.Certainly, above-mentioned transparent substrate The hard substrates such as layer 10 or glass may be implemented narrow when selecting the flexible materials such as pet layer as transparent substrate layer 10 Flexibility with reflectance coating.

There are many set-up modes of above-mentioned light absorber, for example light absorber is arranged at least partly high refractive index material layer 21 and/or at least partly in low refractive index material layer 22, high refractive index material layer 21 and/or low folding are dispersed by light absorber It penetrates in rate material layer 22, on the basis of not increasing the thickness of reflection membrane system additionally, realizes narrow-band absorption effect.Or by above-mentioned light Absorbent is arranged in individual structure sheaf, such as preferably as shown in figure 3, reflection membrane system further includes one or more layers light absorber Layer 24, light absorption oxidant layer 24 is disposed adjacent with part high refractive index material layer 21 and/or low refractive index material layer 22.By light absorption Agent is produced in individual light absorption oxidant layer 24, increases light absorber dosage and the flexibility of position is arranged.

Light absorber for the application is selected from inorganic light absorber, organic light absorber and organo-mineral complexing light absorption Any one or more in agent, preferably inorganic light absorber are metal oxide or metallic salt, wherein metal oxide and Metal in the metallic salt is copper, chromium, iron or cadmium, and preferably organic light absorber is phthalocyanine, porphyrin or azo, organic-inorganic Compound light absorber is phthalocyanine metal chelate, porphyrin metal chelate or azo-metal chelate.Such as Exciton company FDR series (FDR-001, FDR-002, the FDR- of ABS series (such as ABS-642, ABS-626 etc.) and hillside plot chemical industry 003, FDR-004, FDR-005 etc..

In another typical embodiment of the application, a kind of narrowband reflection film is provided, can refer to Fig. 1, the narrowband The representation of reflectance coating are as follows: Sub │ (α₁Hβ₁Lα₂Hβ₂L...α_mHβ_mL)^N0│ Air, wherein Sub represents transparent substrate layer 10, Air represents atmosphere, and H is high refractive index material layer 21, and L is low refractive index material layer 22；One high refractive index material layer 21 and one A matching low refractive index material layer shape 22 is at one high low-index material unit, and m is natural number, and 3 < m < 50； N0 indicates the quantity of membrane stack, 1≤N0 < 10；For low-index material unit α i-th high_iHβ_iL, 1≤i≤n, α_iIndicate the I high refractive index material layer 21 optical thickness along the direction vertical with transparent substrate layer 10 accounts for the multiple of λ/4, β_iIndicate i-th A low refractive index material layer 22 optical thickness along the direction vertical with transparent substrate layer 10 accounts for the multiple of λ/4, and λ is the prison of membrane stack Control wavelength；；α₁, α₂..., α_mAnd β_m..., β₂, β₁The middle part for meeting the same gradation law on same sinusoidal waveform is Sinusoidal alternation area；α₁, α₂..., α_mAnd β_m..., β₂, β₁In be unsatisfactory for the portion of same gradation law on same sinusoidal waveform It is divided into sinusoidal optimization area or α₁, α₂..., α_mAnd β_m..., β₂, β₁The middle same alternation rule met in same cosine waveform The part of rule is cosine alternation area；α₁, α₂..., α_mAnd β_m..., β₂, β₁In be unsatisfactory in same cosine waveform same pass Become the part of rule and optimize area into cosine, wherein the high refractive index material layer and low-refraction in sinusoidal alternation area or cosine alternation area The sum of material layer quantity accounts for 60~99% of the sum of high refractive index material layer and low refractive index material layer quantity in narrowband reflection film.

I in formula₀For incident intensity；R is the energy reflectivity of reflecting surface；Phase difference of the δ between adjacent two coherent light, and enters Penetrate that light inclination angle is related, R+T=1 (R is the surface reflectivity of membrane system, and T is transmissivity).Between adjacent high refractive index material layer Distance and the distance between adjacent low refractive index material layer are that is, the distance of wall, and according to Fabry-Perot Luo Gan Principle is related to, interference reaches cosine wave that is maximum, and transmitting according to the duality principle of light when the distance of wall is the multiple of λ/4 The period of characteristic, cosine becomes larger, therefore by being │ (α in setting film structure₁Hβ₁Lα₂Hβ₂L..α_mHβ_mL) | narrowband Reflectance coating, due to narrowband reflection film high refractive index material layer 21 and low refractive index material layer 22 optical thickness coefficient (i.e. α, β) follow the regular alternation of cosine waveform, i.e., the distance between adjacent high refractive index layer and adjacent low refractive index material layer it Between distance the regular alternation of cosine waveform is presented, the interference effect of specific wavelength will be made to be enhanced, then corresponding phase Refractive index is answered to form the trend that the wavelength band of interference narrows presentation, i.e. the narrowband reflection film can make reflectivity sharp change occur Range of light wavelengths largely narrow, to the effect of narrowband reflection occur, and then avoid reflection bandwidth and cause greatly Optical device gamut differences, albefaction is serious, defect of role's product effect difference.Meanwhile according to membrane stack number in narrowband reflection film There is corresponding variation in variation, narrowband reflection peak number mesh.In addition, being additionally provided with light suction in reflection membrane system or in transparent substrate layer Agent is received, to realize the absorption to the light of specific wavelength.

In a preferred embodiment of the present application, the α in cosine alternation area₁, α₂..., α_mMeet the upper left of cosine waveform Semifocal chord is incremented by, β₁, β₂..., β_mThe upper right semifocal chord for meeting cosine waveform successively decreases, and cosine optimization area is located at the two of cosine alternation area End, and the α in cosine optimization area₁, α₂..., α_mWith one-to-one β₁, β₂..., β_mDifference be less than in cosine alternation area α₁With β₁Difference and α_mWith β_mDifference；Or the α in cosine alternation area₁, α₂..., α_mMeet the lower-left half of cosine waveform String is incremented by, β₁, β₂..., β_mThe bottom right semifocal chord for meeting cosine waveform successively decreases, and cosine optimization area is located at the both ends in cosine alternation area, And the α in cosine optimization area₁, α₂..., α_mWith one-to-one β₁, β₂..., β_mDifference be less than in cosine alternation area α₁With β₁Difference and α_mWith β_mDifference.In the application another kind preferred embodiment, the α in sinusoidal alternation area₁, α₂..., α_mThe upper left semifocal chord for meeting sinusoidal waveform is incremented by, β₁, β₂..., β_mThe upper right semifocal chord for meeting sinusoidal waveform successively decreases, sinusoidal Optimize the both ends that area is located at sinusoidal alternation area, and the α in sinusoidal optimization area₁, α₂..., α_mWith one-to-one β₁, β₂..., β_m Difference be less than and the α in sinusoidal alternation area₁With β₁Difference and α_mWith β_mDifference；Or the α in sinusoidal alternation area₁, α₂..., α_mThe lower-left semifocal chord for meeting sinusoidal waveform is incremented by, β₁, β₂..., β_mThe bottom right semifocal chord for meeting sinusoidal waveform successively decreases, sinusoidal Optimize the both ends that area is located at sinusoidal alternation area, and the α in sinusoidal optimization area₁, α₂..., α_mWith one-to-one β₁, β₂..., β_m Difference be less than and the α in sinusoidal alternation area₁With β₁Difference and α_mWith β_mDifference.By above-mentioned set-up mode, avoid Between the high refractive index material layer and low refractive index material layer at sinusoidal alternation area or cosine alternation area both ends too due to thickness difference The problem of bad adaptability caused by big.

In order to increase reflectivity or increase the transmissivity of non-reflective wave band, for membrane stack quantity also according to the actual situation into Row adjustment, it is preferable that the high low-index material number of unit in each membrane stack is modified by waveform compensation coefficient factor, factor Equal to α₁, α₂..., α_mAnd β_m..., β₂, β₁The cosine waveform respectively formed accounts for the ratio of complete a quarter waveform, and works as α₁, α₂..., α_mAnd β_m..., β₂, β₁Independently meet upper left semifocal chord waveform, lower-left semifocal chord waveform, upper right semifocal chord waveform and the right side Factor is 1 when the complete a quarter waveform of one of lower semifocal chord waveform, the benefit when factor is less than 1, in each membrane stack 1-factor times that high low-index material number of unit is less than or equal to the high low-index material number of unit of membrane stack is repaid, and is mended It repays in high low-index material unit, the optical thickness coefficient of high refractive index material layer and the optical thickness of low refractive index material layer Coefficient and and the deviation of the optical thickness coefficient in its cosine waveform for compensating be less than ± 20%.

In order to make those skilled in the art more easily implement the application, the reflectance coating of the application will be illustrated below Manufacturing process.

Using the high-index material with high index as a target of magnetron sputtering, will have compared with low-refraction Another target as magnetron sputtering of low-index material, pet layer is placed in magnetron sputtering chamber, first on pet layer One layer of high-index material and one layer of low-index material are sputtered as transition zone, latter two right target alternately by bombardment to Alternating sputtering high refractive index material layer and low refractive index material layer on transition zone, when the high-index material of cosputtering destination number After layer and low refractive index material layer, stop sputtering；It repeats the above process, the sputtering target in another release PET base material layer Stop sputtering after the high refractive index material layer and low refractive index material layer of quantity, by high refraction exposed in two PET base material layers Rate material layer and low refractive index material layer are bonded by OCA glue, and remove release pet layer, form reflectance coating.

It is respectively provided with membrane stack if it is pet layer two sides, continues another table in the pet layer of the above-mentioned reflectance coating formed Continue magnetron sputtering on face, used target can be identical with abovementioned steps, can also be different.

The embodiment of the specific process parameter of above-mentioned magnetron sputtering, those skilled in the art can be with reference to magnetic in the prior art It controls the related of sputtering method to record, details are not described herein.

Below with reference to embodiment and comparative example, the beneficial effect of the application is further illustrated.

Embodiment 1

Simulated experiment data:

Antireflection layer and reflection membrane system (high refractive index material layer and low-refraction are set on the pet layer with a thickness of 0.05mm Material layer intersects stacked form), wherein the central wavelength of incident light is set as 532nm, and high refractive index material layer is that refractive index is 2.354 titanium dioxide layer, low refractive index material layer are the silicon dioxide layer that refractive index is 1.46, wherein antireflection layer is by optics It is formed with a thickness of the titanium dioxide layer and silicon dioxide layer of λ/4, reflects the optical thickness factor design of membrane system are as follows:

The first half membrane stacks: 0.216H 1.836L 0.303H 1.691L 0.377H 1.591L 0.561H 1.501L 0.583H 1.422L 0.677H 1.358L 0.762H 1.259L 0.851H 1.192L 0.928H 1.102L 1.010H 1.020L 1.106H 0.921L 1.184H 0.886L 1.255H 0.767L 1.346H 0.714L 1.444H 0.634L 1.552H 0.564L 1.625H 0.432L 1.680H 0.416L 1.755H 0.396L 1.902H 0.233L 3.280H 0.905L, wherein the optical thickness coefficient of high refractive index material layer is incremented by according to the upper right semifocal chord of cosine waveform, low-refraction material The optical thickness coefficient of the bed of material successively decreases according to the upper left semifocal chord of cosine waveform；

The second half membrane stacks: 0.306H 2.574L 0.425H 2.369L 0.528H 2.230L 0.784H 2.101L 0.816H 1.987L 0.951H 1.899L 1.066H 1.766L 1.192H 1.667L 1.294H 1.545L 1.412H 1.428L 1.547H 1.289L 1.656H 1.245L 1.758H 1.070L 1.886H 0.996L 2.025H 0.885L 2.175H 0.791L 2.278H 0.603L 2.348H 0.581L 2.457H 0.550L 2.661H 0.326L 4.594H 1.265L, wherein the optical thickness coefficient of high refractive index material layer is incremented by according to the upper right semifocal chord of cosine waveform, low-refraction material The optical thickness coefficient of the bed of material successively decreases according to the lower-left semifocal chord of cosine waveform；

Optical film is arranged on above-mentioned pet layer, passes through the PSA progress with a thickness of 0.1mm between 0.905L and 0.306H Bonding.

It can be carried out mould using light reflective of the Essential Macleod Film Design software to above-mentioned narrowband reflection film Quasi-, analog result is shown in Fig. 4 and table 1.

Embodiment 2

Using two and half membrane stacks of the magnetron sputtering technique production corresponding narrowband reflection film of embodiment 1, with clean pieces of cloth Cleaning treatment is carried out to substrate (being provided with the pet layer of 0.05mm on substrate) with ethyl alcohol.After deflating in vacuum chamber, dust catcher is used It clears up inside bell jar, coating materials to be evaporated is loaded in molybdenum boat, records the coating materials title of each boat.And base is placed in substrate frame Piece does not tilt substrate.Bell jar is fallen, vacuum chamber is vacuumized by coating machine operating instruction.When vacuum degree reaches 7 × 10^-3After Pa, successively to coating materials fritting in molybdenum boat, the gas in coating materials is removed.Attention blocks coating materials with baffle at this time, to protect Substrate is not coated in card fritting.After vacuum degree reaches requirement, plated using the method for the extremum method of λ/4 control optical thickness Control wavelength is placed on 532nm by system.It is coated with titanium dioxide on the pet layer of substrate first, as film layer thickens, amplifier refers to The photoelectric current shown will decline.When photoelectric current numerical value just bottom out, baffle is blocked immediately.Then, drop electric current changes electrode, Applying silicon oxide, when applying silicon oxide, photoelectric current rises as film thickness increases, and stops plated film when reaching extreme value, repeatedly more than Step plated film.When being coated with the wall that optical thickness is λ/2, thickness is doubled, and should be risen in photoelectric current and be dropped to pole again Stop when value.It is later several layers of the same several layers of identically controlled.

After plated film, stops heating according to coating machine operating instruction and vacuumize.It, can be to coating machine vacuum after half an hour Room inflation, takes out be coated with interferometric filter.Then coating machine is vacuumized again by operating instruction, to keep cleaning, finally It shuts down.Then two and half membrane stacks are bonded using the PSA of 0.1mm.Measurement is in TU-1221 dual-beam ultraviolet light and visible light It is carried out on photometer, directly measurement T- λ curve, three major parameter λ of dielectric interference rate optical filter is found out from curve₀、 T_max、Δλ/λ₀.Photometric light path system is as shown in Figure 5.The working principle of spectrophotometer is as follows: black lamp W₁Or deuterium lamp D₂Hair Light out passes through reflecting mirror M₁, entrance slit S₁With reflecting mirror M₂It is irradiated to after collimation on grating G, the light of grating G diffraction is by anti- Penetrate mirror M₃, exit slit S₂, reflecting mirror M₄With reflecting mirror M₅Two-way is divided by chopper C afterwards: being reflecting mirror M all the way₆, reference light ratio Color pond R and reflecting mirror M₈The reference path of composition, another way are reflecting mirror M₇, sample light colorimetric pool S, reflecting mirror M₉And reflecting mirror M₁₀, sample is placed in the sample light colorimetric pool of this optical path.This two-way light intensity is alternately received by photomultiplier tube, and carries out intensity ratio Compared with, it follows that the transmitance of sample.The corner for changing chopper, can choose different wavelength and measures, to obtain Complete transmittance curve is specifically shown in Fig. 6 and table 1 after transmittance graph is converted to reflectance curve.

Embodiment 3

Simulated experiment data:

The optical thickness coefficient of the high refractive index material layer of membrane system and the optical thickness coefficient and reality of low refractive index material layer Apply that example 1 is identical, two and half membrane stacks are arranged on two opposite surfaces of pet layer.Utilize MacLeod's Film Design software pair The light reflective of above-mentioned narrowband reflection film can be carried out simulation, and analog result is shown in Fig. 7 and table 1.

Embodiment 4

Simulated experiment data:

Antireflection layer and reflection membrane system (high refractive index material layer and low-refraction are set on the pet layer with a thickness of 0.05mm Material layer intersects stacked form), wherein the central wavelength of incident light is set as 520nm, and high refractive index material layer is that refractive index is 2.354 titanium dioxide layer, low refractive index material layer are the silicon dioxide layer that refractive index is 1.46, wherein antireflection layer is by optics It is formed with a thickness of the titanium dioxide layer and silicon dioxide layer of λ/4, reflects the optical thickness factor design of membrane system are as follows:

COP 0.251H 1.592L 0.552H 1.487L 0.582H 1.404L 0.675H 1.344L 0.764H 1.253L 0.834H 1.186L 0.916H 1.097L 0.988H 1.026L 1.088H 0.918L 1.165H 0.892L 1.248H 0.765L 1.350H 0.714L 1.446H 0.631L 1.552H 0.565L 1.620H 0.412L 1.250H 1.405L Air,

It can be carried out mould using light reflective of the Essential Macleod Film Design software to above-mentioned narrowband reflection film Quasi-, analog result is shown in Fig. 8 and table 1.

Embodiment 5

Simulated experiment data:

COP 1.667H 1.790L 1.352H 1.284L 1.298H 1.368L 1.474H 1.567L 1.736H 2.055L 1.955H 2.135L 0.554H 1.435L 0.971H 1.206L 1.276H 1.409L 1.487H 1.606L 1.712H 1.874L 1.004H 2.104L 0.947H 1.046L 1.019H 1.135L 1.300H 1.380L 1.518H 1.643L 1.808H 1.878L 1.962H 2.219L 0.800H 0.861L 1.070H 1.194L 1.291H 1.429L 1.516H 1.635L 1.768H 1.877L 2.006H 2.141L 0.792H 1.067L 1.436H 1.901L 0.678H 1.612L 1.566H 1.612L 1.675H 1.837L 1.829H 1.385L Air

It can be carried out mould using light reflective of the Essential Macleod Film Design software to above-mentioned narrowband reflection film Quasi-, analog result is shown in Fig. 9 and table 1.

Embodiment 6

Simulated experiment data:

0.216H 1.836L 0.303H 1.691L 0.377H 1.591L 0.561H 1.501L 0.583H 1.422L 0.677H 1.358L 0.762H 1.259L 0.851H 1.192L 0.928H 1.102L 1.010H 1.020L 1.106H 0.921L 1.184H 0.886L 1.255H 0.767L 1.346H 0.714L 1.444H 0.634L 1.552H 0.564L 1.625H 0.432L 1.680H 0.416L 1.755H 0.396L 1.902H 0.233L 3.280H 0.905L, wherein high The optical thickness coefficient of refractive index material is incremented by according to the upper right semifocal chord of cosine waveform, the optical thickness of low refractive index material layer Coefficient successively decreases according to the upper left semifocal chord of cosine waveform.

It can be carried out mould using light reflective of the Essential Macleod Film Design software to above-mentioned narrowband reflection film Quasi-, analog result is shown in Figure 10 and table 1.

Embodiment 7

Light absorber is arranged in the high refractive index material layer of 0.377H with embodiment 1 in simulated experiment data, Film Design Uv-531 (2-hydroxy-4-n-octoxybenzophenone) ultraviolet light is arranged in the low refractive index material layer of ABS-642,1.591L to inhale Receive agent, wherein weight percent of the light absorber ABS-642 in the high refractive index material layer is 1% or so, uv-531 (2- Hydroxyl -4- oxy-octyl benzophenone) weight percent of the UV absorbers in the low refractive index material layer be 1% left It is right.Due to the addition of above-mentioned ultraviolet absorber, when being deviated for 0~30 °, the offset of narrowband reflection film be can control in 50nm In range.It can be carried out simulation using light reflective of the Essential Macleod Film Design software to above-mentioned narrowband reflection film, Its analog result is shown in Figure 11 and table 1.

Comparative example 1

0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L。

It can be carried out mould using light reflective of the Essential Macleod Film Design software to above-mentioned narrowband reflection film Quasi-, analog result is shown in Figure 12 and table 1.

Comparative example 2

0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L 0.377H 1.591L。

It can be carried out mould using light reflective of the Essential Macleod Film Design software to above-mentioned narrowband reflection film Quasi-, analog result is shown in Figure 13 and table 1.

Table 1

It can be seen that the application according to the result of Fig. 4 to Figure 13 to pass through to high refractive index material layer and low-index material The variation of the optical thickness of layer is regulated and controled, and is changed it according to the rule of cosine waveform, it is anti-to realize ideal narrowband Penetrate effect, wherein the superposition of two and half membrane stacks is so that the cut-off of the repetition cutoff wavelength of two and half membrane stacks is deep in Examples 1 and 2 Degree increases, and is filled and led up without duplicate part, to realize the narrowband reflection of repeating part.In addition, according to Fig. 4 and Figure 11 Comparison and embodiment 1 and embodiment 7 data comparison it can be found that increasing narrowband reflection after UV absorbers does not have It is affected.

And it can be seen that the analogue data of embodiment 1 and the experiment real data of embodiment 2 according to the data in table 1 Consistency is preferable, and according to the comparison of embodiment 1 and embodiment 6 it can be found that by increasing high refractive index material layer and low folding The number of plies for penetrating rate material layer is conducive to increase reflectivity and reduces the bandwidth of reflection peak, and color is more sharp keen, the color of reflection Effect is more prominent.

In addition, present inventor further carries out different colorimetric detections to the narrowband reflection film of embodiment 2, find at 0 ° When coloration, jewel green is presented in reflectance coating, and color is sharp keen, and the effect of similar green quantum dot, pure color has metallic Sense, no albinism, in 45 ° of colorations, the narrow peak of narrowband reflection film deviates to the left, becomes weak cyan, and infrared part light adds Enter, integral color becomes metallic red, illustrates that the narrowband reflection film of the application has good color shifting properties.Comparative example 1 and comparative example 2 Reflectance coating, do not change colour the characteristic sharp keen with coloration.

It can be seen from the above description that the above embodiments of the present invention realized the following chievements:

I in formula₀For incident intensity；R is the energy reflectivity of reflecting surface；Phase difference of the δ between adjacent two coherent light, and enters Penetrate that light inclination angle is related, R+T=1 (R is the surface reflectivity of membrane system, and T is transmissivity).The distance between adjacent high refractive index layer And the distance between adjacent low refractive index material layer that is, wall distance, and according to Fabry-Perot interference original Reason, interference reaches cosine baud that is maximum, and transmitting according to the duality principle of light when the distance of wall is the multiple of λ/4 Property, the period of cosine becomes larger, therefore by reflection membrane system setting film structure be │ (α₁Hβ₁Lα₂Hβ₂L...α_mHβ_mL) | membrane stack, since the high refractive index material layer of membrane stack and the optical thickness coefficient of low refractive index material layer follow cosine waveform Regular alternation, i.e., more than the distance between adjacent high refractive index layer and the distance between adjacent low refractive index material layer are presented The regular alternation of string waveform, will make the interference effect of specific wavelength be enhanced, then corresponding respective indices of refraction formed it is dry The trend that the wavelength band related to narrows presentation, the i.e. membrane stack can make reflectivity the range of light wavelengths of sharp change occur in very great Cheng Narrow on degree, to the effect of narrowband reflection occur.Meanwhile according to the variation of membrane stack number, there is phase in narrowband reflection peak number mesh The variation answered.In addition, light absorber is additionally provided in reflection membrane system or in transparent substrate layer, to realize to specific wavelength Light absorption.

The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.

Claims

1. a kind of narrowband reflection film, wherein include:

Transparent substrate layer (10)；

Membrane system, including n high low-index material units are reflected, the high low-index material unit stacks gradually described transparent On the surface or two opposite surfaces of substrate layer (10), each high low-index material unit includes one high refraction Rate material layer (21) and a paired low refractive index material layer (22), the reflection membrane system include at least one membrane system knot Structure is │ (α₁Hβ₁Lα₂Hβ₂L...α_mHβ_mL) the membrane stack (20) of │, wherein H indicates high refractive index material layer (21), and L indicates low folding It penetrates rate material layer (22), n, m are positive integer, and 3 < n≤150,3 < m≤50, m≤n, in the same membrane stack (20) α₁, α₂..., α_mAnd β_m..., β₂, β₁Meet the same alternation on the same cosine waveform or sinusoidal waveform each independently Rule；For low-index material unit α i-th high_iHβ_iL, 1≤i≤n, α_iIndicate i-th of high refractive index material layer (21) multiple of λ/4, β are accounted for along optical thickness on the direction vertical with the transparent substrate layer (10)_iIndicate i-th of low folding The multiple that rate material layer (22) account for λ/4 along optical thickness on the direction vertical with the transparent substrate layer (10) is penetrated, λ is membrane stack Supervisory wavelength, and light absorber is additionally provided in the reflection membrane system or in the transparent substrate layer (10).

2. narrowband reflection film according to claim 1, wherein in the same membrane stack (20), for i-th of height Low-index material unit α_iHβ_iL, the optical thickness of the high refractive index material layer (21) are α_i* λ/4, the low-refraction material The optical thickness of the bed of material (22) is β_i* λ/4, the refractive index of the high refractive index material layer (21) are N_H, the high-index material The physical thickness of layer (21) is D_H, then there is N_H*D_H=α_i*λ/4；The refractive index of the low refractive index material layer (22) is N_L, institute The physical thickness for stating low refractive index material layer (22) is D_L, then there is N_L*D_L=β_i*λ/4；Wherein, α₁, α₂..., α_mAnd β_m..., β₂, β₁Meet each independently selected from range in the same sinusoidal waveform of 0~2 π or the upper left of cosine waveform Same gradation law on semifocal chord, lower-left semifocal chord, upper right semifocal chord and bottom right semifocal chord.

3. narrowband reflection film according to claim 2, wherein when the narrowband reflection film is using 455nm as supervisory wavelength, α_i, β_iValue range exist: 0.01≤α_i≤ 3.2,0.01≤β_i≤ 3.2, it is preferable that 0.05≤α_i≤ 2.8,0.05≤β_i≤2.8； Preferably, 0.1≤α_i≤ 2.8,0.1≤β_i≤2.8；It is further preferable that 0.2≤α_i≤ 2.7,0.2≤β_i≤2.7。

4. narrowband reflection film according to any one of claim 1 to 3, wherein the high low-refraction of the membrane stack (20) The quantity of material cell accounts for the 60~99% of the total quantity of the high low-index material unit of the reflection membrane system.

5. narrowband reflection film according to any one of claim 1 to 3, wherein the high refractive index material layer (21) Physical thickness is 1~400nm, preferably 10~150nm, the physical thickness of the preferably described low refractive index material layer (22) is 1~ 400nm, preferably 10~150nm.

6. narrowband reflection film according to any one of claim 1 to 3, wherein the high refractive index material layer (21) Refractive index is 1.5~5.0, preferably 1.65~3.0, and the refractive index of the low refractive index material layer (22) is 1.1~1.5, excellent It is selected as 1.25~1.48.

7. narrowband reflection film according to any one of claim 1 to 3, wherein form the high refractive index material layer (21) and the refraction materials of the low refractive index material layer (22) are each independently selected from MgF₂、CaF₂, transition metal fluorination Object, ZnO, TiO₂、TiN、In₂O₃、SnO₃、Cr₂O₃、ZrO₂、Ta₂O₅、LaB₆、NbO、Nb₂O₃、Nb₂O₅、SiO₂、SiC、Si₃N₄、 Al₂O₃, fluorine resin, any one or more in the resin containing hollow silica.

8. narrowband reflection film according to any one of claim 1 to 3, wherein the high refractive index material layer (21) and Total number of plies of the low refractive index material layer (22) is 12~60.

9. narrowband reflection film according to any one of claim 1 to 3, wherein the high low-index material unit Optical admittance is greater than 1.5 or 1 < A < 1.2, and the narrowband reflection film can be existed with the width range reflection wavelength of 20~50nm 380~1200nm range light.

10. narrowband reflection film according to any one of claim 1 to 3, wherein the membrane stack (20) further include one layer or Multi-layered bonded layer (23), the adjacent membrane stack (20) in part are bonded by the adhesive layer (23).

11. narrowband reflection film according to claim 10, wherein the adhesive layer (23) be OCA glue-line or PSA glue-line, It is preferred that the adhesive layer (23) with a thickness of 0.005~0.2mm.

12. reflectance coating according to any one of claim 1 to 3, wherein the transparent substrate layer (10) be pet layer, COP layers, COC layers, CPI layers, PMMA layers, PEN layers, PC layers or TAC layer, the preferably described transparent substrate layer (10) with a thickness of 1~ 50μm。

13. reflectance coating according to claim 1, wherein the light absorber is arranged in at least partly described high refractive index In material layer (21) and/or at least partly described low refractive index material layer (22) or the reflection membrane system further includes one layer or more Layer light absorption oxidant layer (24), the light absorption oxidant layer (24) and the part high refractive index material layer (21) and/or the low folding Rate material layer (22) is penetrated to be disposed adjacent.

14. reflectance coating according to claim 1, wherein the light absorber is selected from inorganic light absorber, organic light absorption Any one or more in agent and organo-mineral complexing light absorber, the preferably described inorganic light absorber be metal oxide or Metallic salt, wherein metal in the metal oxide and the metallic salt is copper, chromium, iron or cadmium, it is preferably described organic Light absorber is phthalocyanine, porphyrin or azo, and the organo-mineral complexing light absorber is phthalocyanine metal chelate, porphyrin metal chela Close object or azo-metal chelate.

15. a kind of narrowband reflection film, wherein the representation of the narrowband reflection film are as follows: Sub │ (α₁Hβ₁Lα₂Hβ₂L...α_mHβ_mL)^N0│ Air, wherein Sub is represented transparent substrate layer (10), and Air represents atmosphere, and H is high refractive index material layer (21), and L is low folding Penetrate rate material layer (22)；One high refractive index material layer (21) and a matching low refractive index material layer (22) one high low-index material unit is formed, m is natural number, and 3 m≤50 <；N0 indicates the quantity of membrane stack, 1≤N0 < 10；For low-index material unit α i-th high_iHβ_iL, 1≤i≤n, α_iIndicate i-th of high refractive index material layer (21) The multiple of λ/4, β are accounted for along optical thickness on the direction vertical with the transparent substrate layer (10)_iIndicate i-th of low-refraction Material layer (22) accounts for the multiple of λ/4 along optical thickness on the direction vertical with the transparent substrate layer (10), and λ is the monitoring of membrane stack Wavelength；

α₁, α₂..., α_mAnd β_m..., β₂, β₁The middle part for meeting the same gradation law on same sinusoidal waveform is sine Alternation area；α₁, α₂..., α_mAnd β_m..., β₂, β₁In the part of same gradation law that is unsatisfactory on same sinusoidal waveform be Sinusoidal optimization area, or

α₁, α₂..., α_mAnd β_m..., β₂, β₁The middle part for meeting the same gradation law in same cosine waveform is cosine Alternation area；α₁, α₂..., α_mAnd β_m..., β₂, β₁In the part of same gradation law that is unsatisfactory in same cosine waveform be Cosine optimizes area,

Wherein, the high refractive index material layer and the low-index material in the sinusoidal alternation area or cosine alternation area The sum of the quantity of layer account for high refractive index material layer described in the narrowband reflection film and the low refractive index material layer quantity it The 60~99% of sum, and light absorber is additionally provided in the reflection membrane system or the transparent substrate layer (10).

16. narrowband reflection film according to claim 15, wherein

The α in cosine alternation area₁, α₂..., α_mThe upper left semifocal chord for meeting the cosine waveform is incremented by, β₁, β₂..., β_mMeet The upper right semifocal chord of the cosine waveform successively decreases, and cosine optimization area is located at the both ends in cosine alternation area, and the cosine Optimize the α in area₁, α₂..., α_mWith one-to-one β₁, β₂..., β_mDifference be less than and the α in cosine alternation area₁ With β₁Difference and α_mWith β_mDifference；Or

The α in cosine alternation area₁, α₂..., α_mThe lower-left semifocal chord for meeting the cosine waveform is incremented by, β₁, β₂..., β_mMeet The bottom right semifocal chord of the cosine waveform successively decreases, and cosine optimization area is located at the both ends in cosine alternation area, and the cosine Optimize the α in area₁, α₂..., α_mWith one-to-one β₁, β₂..., β_mDifference be less than and the α in cosine alternation area₁ With β₁Difference and α_mWith β_mDifference.

17. narrowband reflection film according to claim 15, wherein

The α in the sine alternation area₁, α₂..., α_mThe upper left semifocal chord for meeting institute's sine and cosine waveform is incremented by, β₁, β₂..., β_mMeet The upper right semifocal chord of the sinusoidal waveform successively decreases, and the sinusoidal optimization area is located at the both ends in the sinusoidal alternation area, and the sine Optimize the α in area₁, α₂..., α_mWith one-to-one β₁, β₂..., β_mDifference be less than and the sinusoidal alternation area in α₁ With β₁Difference and α_mWith β_mDifference；Or

The α in the sine alternation area₁, α₂..., α_mThe lower-left semifocal chord for meeting the sinusoidal waveform is incremented by, β₁, β₂..., β_mMeet The bottom right semifocal chord of the sinusoidal waveform successively decreases, and the sinusoidal optimization area is located at the both ends in the sinusoidal alternation area, and the sine Optimize the α in area₁, α₂..., α_mWith one-to-one β₁, β₂..., β_mDifference be less than and the sinusoidal alternation area in α₁ With β₁Difference and α_mWith β_mDifference.

18. narrowband reflection film according to claim 15, wherein the high low-index material unit number in each membrane stack Mesh is modified by waveform compensation coefficient factor, and the factor is equal to α₁, α₂..., α_mAnd β_m..., β₂, β₁Respectively form Cosine waveform accounts for the ratio of complete a quarter waveform, and works as α₁, α₂..., α_mAnd β_m..., β₂, β₁Independently meet upper left half The complete a quarter waveform when institute of one of string waveform, lower-left semifocal chord waveform, upper right semifocal chord waveform and bottom right semifocal chord waveform Stating factor is 1, and when the factor is less than 1, the high low-index material number of unit of compensation in each membrane stack is less than Equal to 1-factor times of the high low-index material number of unit of the membrane stack, and the high low-index material unit of compensation In, it the optical thickness coefficient of the high refractive index material layer and the optical thickness coefficient of low refractive index material layer and is compensated with it The deviation of optical thickness coefficient in the cosine waveform is less than ± 20%.