CN109596041A - One kind having application of the indium tin oxide on thin film strain meter of (400) crystal face preferentially - Google Patents
One kind having application of the indium tin oxide on thin film strain meter of (400) crystal face preferentially Download PDFInfo
- Publication number
- CN109596041A CN109596041A CN201811435791.5A CN201811435791A CN109596041A CN 109596041 A CN109596041 A CN 109596041A CN 201811435791 A CN201811435791 A CN 201811435791A CN 109596041 A CN109596041 A CN 109596041A
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- Prior art keywords
- tin oxide
- indium
- film strain
- thin film
- indium tin
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
- G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
- G01B7/20—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance formed by printed-circuit technique
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
The present invention relates to one kind to have application of the indium tin oxide on thin film strain meter of (400) crystal face preferentially, belongs to thin film strain meter technical field.To there is method using magnetron sputtering the body-centered cubic Ferromanganese Ore phase polycrystalline indium tin oxide of (400) crystal face preferentially thin film strain meter is made.The preferred orientation of present invention indium and tin oxide film as obtained by control magnetron sputtering, realizes indium and tin oxide film strain gauge in 200 DEG C of temperature stabilities below.
Description
Technical field
The present invention relates to one kind to have application of the indium tin oxide on thin film strain meter of (400) crystal face preferentially, belongs to
Thin film strain meter technical field.
Background technique
Thin film strain meter has many advantages, such as that low preparation cost, high sensitivity, response time are short.Currently, thin film strain meter master
It to be made of metal group material, such as: Pt, Ni80Cr20、Ni45Cu55Deng above-mentioned metal class thin film strain meter is in visible-range
Be opaque, and in certain special dimensions, it is desirable that thin film strain meter be in visible-range it is transparent, such as: space is hoped
The remote lens surface of mirror, the glass surface of spacecraft, surface of solar panel etc..Indium and tin oxide film material is a kind of
Important transparent conductive material has important application in photoelectric conversion field, such as: solar battery transparent electrode, FPD
Device transparent electrode, photoelectric sensor transparent electrode etc..In recent years, using electrically conducting transparent indium and tin oxide film material as thin transparent
The research of membrane strain meter, has attracted more and more attention from people.Transparent indium-tin-oxide thin-film material is strained as transparent membrane
Meter is in application, its Service Environment is usually varying temperature environment, and such as: room temperature is to 200 DEG C, and therefore, indium and tin oxide film strain gauge exists
When lower than 200 DEG C, there should be temperature stability, that is, after the down cycles process that repeatedly heats up, indium and tin oxide film is answered
The electrical properties for becoming meter still remain unchanged.However, commonly indium and tin oxide film strain gauge is during varying temperature environment is on active service, especially
It, since indium and tin oxide film can react with the oxygen in air, leads to indium and tin oxide film at 100 DEG C of >
Irreversible change can occur for electrical properties, and then indium and tin oxide film strain gauge is caused to fail.
Currently, being needed thin in indium tin oxide to overcome the Problem of Failure of indium and tin oxide film strain gauge at high temperature
Membrane strain meter surface prepares one layer of fine and close inoxidzable coating, such as: SiO2、Al2O3、SiNx、AlNxDeng, but these methods exist
Some shortcomings, such as: biggish stress can reduce the sensitivity coefficient of indium and tin oxide film strain gauge in inoxidzable coating；
Biggish stress can cause inoxidzable coating to be crushed, fall off during alternating temperature is on active service in inoxidzable coating, and then lead to oxygen
Change failure；It needs outwardly to discharge during preparing inoxidzable coating containing Cl, F, COx、NHx、NOxThe tail of equal pernicious gases
Gas causes environmental pollution；There are the problems such as at high cost, time-consuming, low efficiency for the indium and tin oxide film strain gauge of preparation.
Summary of the invention
The present invention prepares body-centered cubic Ferromanganese Ore phase polycrystalline indium and tin oxide film strain gauge using the method for magnetron sputtering,
By adjusting the preferred orientation of indium and tin oxide film, makes indium and tin oxide film strain gauge that there is temperature stability, solve
The above problem.
The present invention provides one kind to have application of the indium tin oxide on thin film strain meter of (400) crystal face preferentially, benefit
With the method for magnetron sputtering will there is the body-centered cubic Ferromanganese Ore phase polycrystalline indium tin oxide of (400) crystal face preferentially film is made to answer
Become meter.
The present invention is preferably the thin film strain meter with a thickness of >=300nm.
The present invention is preferably that the purity of the indium tin oxide is 99.99%, in which: the mass percent of indium sesquioxide
For 90wt.%, the mass percent of stannic oxide is 10wt.%.
The present invention is preferably that the power density of the magnetron sputtering is 4.8-8.0W/cm2。
The present invention is preferably that the temperature of the magnetron sputtering is natural room temperature.
The present invention is preferably that the working gas of the magnetron sputtering is argon, and the purity of the argon is 99.99%.
The invention has the following beneficial effects:
1. the preferred orientation of present invention indium and tin oxide film as obtained by control magnetron sputtering, realizes that indium tin oxide is thin
Membrane strain meter is in 200 DEG C of temperature stabilities below.
2. thin film strain meter preparation method of the present invention is simple, at low cost, yield is high, is convenient for large-scale industry metaplasia
It produces.
Detailed description of the invention
4 width of attached drawing of the present invention,
Fig. 1 is the structural schematic diagram of mask plate in embodiment 1-4, comparative example 1-2；
Fig. 2 is the X ray diffracting spectrum of indium tin oxide in embodiment 1-4, comparative example 1-2；
Fig. 3 is the temperature cycles curve of indium and tin oxide film strain gauge in embodiment 1-4, comparative example 1-2；
Fig. 4 is the resistance change curves of indium and tin oxide film strain gauge in embodiment 1-4, comparative example 1-2.
Specific embodiment
Following non-limiting embodiments can with a person of ordinary skill in the art will more fully understand the present invention, but not with
Any mode limits the present invention.
Embodiment 1
One kind having application of the indium tin oxide on thin film strain meter of (400) crystal face preferentially, utilizes DC pulse magnetic
The method sputtered is controlled under natural room temperature using glass slide as base material, mask plate as shown in Figure 1 is placed on base material, with
Indium tin oxide (purity of indium tin oxide be 99.99%, in which: the mass percent of indium sesquioxide be 90wt.%, two
The mass percent of tin oxide is 10wt.%) it is sputtering target material, with argon (purity of argon is 99.99%) for sputter gas, carry out
Magnetron sputtering prepares indium and tin oxide film strain gauge, indium and tin oxide film strain gauge with a thickness of 800nm, indium tin oxide
Thin-film material is in body-centered cubic Ferromanganese Ore phase polycrystalline structure, and shows weak (400) Solute Content in Grain, as shown in Figure 2；
Wherein: DC pulse shielding power supply working frequency is 200kHz, and indium tin oxide target surface Sputtering power density is
4.8W/cm2, argon flow is 20sccm, and back end vacuum degree is 3.0 × 10-3Pa, sputtering vacuum degree are 0.7Pa, and sedimentation time is
5min。
Indium and tin oxide film strain gauge is placed in drying box, under air atmosphere, 20-200 DEG C of progress temperature cycles
Test, in each temperature cycles period, thermometric step-length is 20 DEG C, and heat/cool rates are 4 DEG C/min, each temperature measuring point heat preservation
Time is 20min, and Fig. 3 is the temperature cycles curve graph under a temperature cycles.
After 15 temperature cycles, the resistance value of indium and tin oxide film strain gauge, there is no significant changes, such as scheme
Shown in 4.
Embodiment 2
One kind having application of the indium tin oxide on thin film strain meter of (400) crystal face preferentially, utilizes DC pulse magnetic
The method sputtered is controlled under natural room temperature using quartz plate as base material, mask plate as shown in Figure 1 is placed on base material, with
Indium tin oxide (purity of indium tin oxide be 99.99%, in which: the mass percent of indium sesquioxide be 90wt.%, two
The mass percent of tin oxide is 10wt.%) it is sputtering target material, with argon (purity of argon is 99.99%) for sputter gas, carry out
Magnetron sputtering prepares indium and tin oxide film strain gauge, indium and tin oxide film strain gauge with a thickness of 500nm, indium tin oxide
Thin-film material is in the body-centered cubic Ferromanganese Ore phase polycrystalline structure of (400) crystal face preferentially, as shown in Figure 2；
Wherein: DC pulse shielding power supply working frequency is 13.56MHz, indium tin oxide target surface Sputtering power density
For 5.6W/cm2, argon flow is 15sccm, and back end vacuum degree is 2.0 × 10-3Pa, sputtering vacuum degree are 0.6Pa, and sedimentation time is
5min。
Indium and tin oxide film strain gauge is placed in drying box, under air atmosphere, 20-200 DEG C of progress temperature cycles
Test, in each temperature cycles period, thermometric step-length is 20 DEG C, and heat/cool rates are 4 DEG C/min, each temperature measuring point heat preservation
Time is 20min, and Fig. 3 is the temperature cycles curve graph under a temperature cycles.
After 15 temperature cycles, the resistance value of indium and tin oxide film strain gauge, there is no significant changes, such as scheme
Shown in 4.
Embodiment 3
One kind having application of the indium tin oxide on thin film strain meter of (400) crystal face preferentially, utilizes DC pulse magnetic
The method sputtered is controlled under natural room temperature using quartz plate as base material, mask plate as shown in Figure 1 is placed on base material, with
Indium tin oxide (purity of indium tin oxide be 99.99%, in which: the mass percent of indium sesquioxide be 90wt.%, two
The mass percent of tin oxide is 10wt.%) it is sputtering target material, with argon (purity of argon is 99.99%) for sputter gas, carry out
Magnetron sputtering prepares indium and tin oxide film strain gauge, indium and tin oxide film strain gauge with a thickness of 400nm, indium tin oxide
Thin-film material is in the body-centered cubic Ferromanganese Ore phase polycrystalline structure of (400) crystal face preferentially, as shown in Figure 2；
Wherein: DC pulse shielding power supply working frequency is 200kHz, and indium tin oxide target surface Sputtering power density is
6.4W/cm2, argon flow is 18sccm, and back end vacuum degree is 3.0 × 10-3Pa, sputtering vacuum degree are 0.7Pa, and sedimentation time is
3min。
Indium and tin oxide film strain gauge is placed in drying box, under air atmosphere, 20-200 DEG C of progress temperature cycles
Test, in each temperature cycles period, thermometric step-length is 20 DEG C, and heat/cool rates are 4 DEG C/min, each temperature measuring point heat preservation
Time is 20min, and Fig. 3 is the temperature cycles curve graph under a temperature cycles.
After 15 temperature cycles, the resistance value of indium and tin oxide film strain gauge, there is no significant changes, such as scheme
Shown in 4.
Embodiment 4
One kind having application of the indium tin oxide on thin film strain meter of (400) crystal face preferentially, utilizes DC pulse magnetic
The method sputtered is controlled under natural room temperature using quartz plate as base material, mask plate as shown in Figure 1 is placed on base material, with
Indium tin oxide (purity of indium tin oxide be 99.99%, in which: the mass percent of indium sesquioxide be 90wt.%, two
The mass percent of tin oxide is 10wt.%) it is sputtering target material, with argon (purity of argon is 99.99%) for sputter gas, carry out
Magnetron sputtering prepares indium and tin oxide film strain gauge, indium and tin oxide film strain gauge with a thickness of 1000nm, the oxidation of indium tin
Object thin-film material is in the body-centered cubic Ferromanganese Ore phase polycrystalline structure of (400) crystal face preferentially, as shown in Figure 2；
Wherein: DC pulse shielding power supply working frequency is 300kHz, and indium tin oxide target surface Sputtering power density is
8.0W/cm2, argon flow is 20sccm, and back end vacuum degree is 3.0 × 10-3Pa, sputtering vacuum degree are 0.7Pa, and sedimentation time is
8min。
Indium and tin oxide film strain gauge is placed in drying box, under air atmosphere, 20-200 DEG C of progress temperature cycles
Test, in each temperature cycles period, thermometric step-length is 20 DEG C, and heat/cool rates are 4 DEG C/min, each temperature measuring point heat preservation
Time is 20min, and Fig. 3 is the temperature cycles curve graph under a temperature cycles.
After 15 temperature cycles, the resistance value of indium and tin oxide film strain gauge, there is no significant changes, such as scheme
Shown in 4.
Comparative example 1
A kind of preparation method of indium and tin oxide film strain gauge, the preparation method is that: it is splashed using DC pulse magnetic control
Mask plate as shown in Figure 1 is placed on base material by the method penetrated at room temperature using quartz plate as base material, with the oxidation of indium tin
(purity of indium tin oxide is 99.99% to object, in which: the mass percent of indium sesquioxide is 90wt.%, stannic oxide
Mass percent is 10wt.%) it is sputtering target material, with argon (purity of argon is 99.99%) for sputter gas, carry out magnetron sputtering
Prepare indium and tin oxide film strain gauge, indium and tin oxide film strain gauge with a thickness of 600nm, indium and tin oxide film material
In the body-centered cubic Ferromanganese Ore phase polycrystalline structure of nothing preferentially, as shown in Figure 2；
Wherein: DC pulse shielding power supply working frequency is 200kHz, and indium tin oxide target surface Sputtering power density is
4.0W/cm2, argon flow is 20sccm, and back end vacuum degree is 3.0 × 10-3Pa, sputtering vacuum degree are 0.7Pa, and sedimentation time is
8min。
Indium and tin oxide film strain gauge is placed in drying box, under air atmosphere, 20-200 DEG C of progress temperature cycles
Test, in each temperature cycles period, thermometric step-length is 20 DEG C, and heat/cool rates are 4 DEG C/min, each temperature measuring point heat preservation
Time is 20min, and Fig. 3 is the temperature cycles curve graph under a temperature cycles.
After 15 temperature cycles, the resistance value of indium and tin oxide film strain gauge is significantly increased, such as Fig. 4 institute
Show.
Comparative example 2
A kind of preparation method of indium and tin oxide film strain gauge, the preparation method is that: it is splashed using DC pulse magnetic control
Mask plate as shown in Figure 1 is placed on base material by the method penetrated at room temperature using quartz plate as base material, with the oxidation of indium tin
(purity of indium tin oxide is 99.99% to object, in which: the mass percent of indium sesquioxide is 90wt.%, stannic oxide
Mass percent is 10wt.%) it is sputtering target material, with argon (purity of argon is 99.99%) for sputter gas, carry out magnetron sputtering
Prepare indium and tin oxide film strain gauge, indium and tin oxide film strain gauge with a thickness of 1000nm, indium and tin oxide film material
Body-centered cubic Ferromanganese Ore phase polycrystalline structure of the material in nothing preferentially, as shown in Figure 2；
Wherein: DC pulse shielding power supply working frequency is 13.56MHz, indium tin oxide target surface Sputtering power density
For 3.2W/cm2, argon flow is 15sccm, and back end vacuum degree is 2.0 × 10-3Pa, sputtering vacuum degree are 0.6Pa, and sedimentation time is
15min。
Indium and tin oxide film strain gauge is placed in drying box, under air atmosphere, 20-200 DEG C of progress temperature cycles
Test, in each temperature cycles period, thermometric step-length is 20 DEG C, and heat/cool rates are 4 DEG C/min, each temperature measuring point heat preservation
Time is 20min, and Fig. 3 is the temperature cycles curve graph under a temperature cycles.
After 15 temperature cycles, the resistance value of indium and tin oxide film strain gauge is significantly increased, such as Fig. 4 institute
Show.
Claims (6)
1. one kind has application of the indium tin oxide on thin film strain meter of (400) crystal face preferentially, it is characterised in that: utilize magnetic
To there is the method for control sputtering the body-centered cubic Ferromanganese Ore phase polycrystalline indium tin oxide of (400) crystal face preferentially thin film strain is made
Meter.
2. application according to claim 1, it is characterised in that: the thin film strain meter with a thickness of >=300nm.
3. application according to claim 2, it is characterised in that: the purity of the indium tin oxide is 99.99%, in which:
The mass percent of indium sesquioxide is 90wt.%, and the mass percent of stannic oxide is 10wt.%.
4. application according to claim 3, it is characterised in that: the power density of the magnetron sputtering is 4.8-8.0W/cm2。
5. application according to claim 4, it is characterised in that: the temperature of the magnetron sputtering is natural room temperature.
6. application according to claim 5, it is characterised in that: the working gas of the magnetron sputtering is argon, the argon
Purity is 99.99%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811435791.5A CN109596041A (en) | 2018-11-28 | 2018-11-28 | One kind having application of the indium tin oxide on thin film strain meter of (400) crystal face preferentially |
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| CN201811435791.5A CN109596041A (en) | 2018-11-28 | 2018-11-28 | One kind having application of the indium tin oxide on thin film strain meter of (400) crystal face preferentially |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109881153A (en) * | 2019-04-18 | 2019-06-14 | 大连交通大学 | Application of the indium tin oxide on transparent membrane thermocouple with (400) crystal face preferentially |
| CN110004410A (en) * | 2019-04-18 | 2019-07-12 | 大连交通大学 | Application of the indium tin oxide on transparent membrane thermocouple with (400) crystal face preferentially |
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| CN105908142A (en) * | 2016-04-15 | 2016-08-31 | 大连交通大学 | High-temperature thin film strain gauge and manufacturing method thereof |
| CN106282924A (en) * | 2016-09-27 | 2017-01-04 | 大连交通大学 | One has the preparation method of (004) crystal face indium and tin oxide film material preferentially |
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| CN102544233A (en) * | 2012-02-23 | 2012-07-04 | 上海中智光纤通讯有限公司 | ITO transparent conductive oxide thin film preparation method |
| CN103900460A (en) * | 2012-12-28 | 2014-07-02 | 华东理工大学 | Semiconductor film high-temperature deformation sensor |
| CN104851968A (en) * | 2015-05-21 | 2015-08-19 | 中国特种设备检测研究院 | Anisotropy film for in-plane strain sensor, and preparation method thereof |
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| CN109881153A (en) * | 2019-04-18 | 2019-06-14 | 大连交通大学 | Application of the indium tin oxide on transparent membrane thermocouple with (400) crystal face preferentially |
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