CN109881153A - Application of the indium tin oxide on transparent membrane thermocouple with (400) crystal face preferentially - Google Patents
Application of the indium tin oxide on transparent membrane thermocouple with (400) crystal face preferentially Download PDFInfo
- Publication number
- CN109881153A CN109881153A CN201910314709.1A CN201910314709A CN109881153A CN 109881153 A CN109881153 A CN 109881153A CN 201910314709 A CN201910314709 A CN 201910314709A CN 109881153 A CN109881153 A CN 109881153A
- Authority
- CN
- China
- Prior art keywords
- tin oxide
- indium
- thermocouple
- transparent membrane
- magnetron sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to one kind to have application of the indium tin oxide on transparent membrane thermocouple of (400) crystal face preferentially, belongs to film thermocouple technical field.The pole that method using DC pulse magnetron sputtering will there is the body-centered cubic Ferromanganese Ore phase polycrystalline indium tin oxide of (400) crystal face preferentially transparent membrane thermocouple is made, the duty ratio of the DC pulse magnetron sputtering are 10-40%.The preferred orientation of present invention indium and tin oxide film as obtained by control DC pulse magnetron sputtering, makes indium tin oxide transparent membrane thermocouple Seebeck coefficient with higher.
Description
Technical field
The present invention relates to one kind to have application of the indium tin oxide on transparent membrane thermocouple of (400) crystal face preferentially,
Belong to film thermocouple technical field.
Background technique
Film thermocouple has many advantages, such as that low preparation cost, high sensitivity, response time are short.Currently, film thermocouple master
It to be made of metal group material, such as: Pt, Ni90Cr10、Ni95Si5Deng above-mentioned metal class film thermocouple is in visible-range
Be opaque, and in certain special dimensions, it is desirable that film thermocouple be in visible-range it is transparent, such as: space is hoped
The remote lens surface of mirror, the glass surface of spacecraft, surface of solar panel etc..Indium and tin oxide film material is a kind of
Important transparent conductive material has important application in photoelectric conversion field, such as: solar battery transparent electrode, FPD
Device transparent electrode, photoelectric sensor transparent electrode etc..In recent years, by electrically conducting transparent indium and tin oxide film material use transparent
The research in film thermocouple field, has attracted more and more attention from people.Transparent indium-tin-oxide thin-film material is as thin transparent
For film thermocouple in application, its Seebeck coefficient is bigger, transparent membrane thermocouple temperature measurement is more quasi-；Seebeck coefficient is more stable, transparent
Film thermocouple service life is longer.However, common indium and tin oxide film has without preferentially polycrystalline body-centered cubic Ferromanganese Ore phase
Structure, when carrying out thermometric in air, due to without preferentially the phase indium and tin oxide film meeting of polycrystalline body-centered cubic Ferromanganese Ore and air
In oxygen react, cause the electrical properties of indium and tin oxide film that irreversible change can occur, and then cause film hot
Galvanic couple has lower Seebeck coefficient, eventually leads to the reduction of film thermocouple temperature measurement accuracy.
Currently, to overcome indium tin oxide transparent membrane thermocouple Seebeck coefficient during thermometric is unstable to ask
Topic, needs in indium and tin oxide film transparent membrane thermocouple gauge wheat flour for one layer of fine and close inoxidzable coating, such as: SiO2、
Al2O3、SiNx、AlNxDeng, but these methods come with some shortcomings place, such as: biggish stress can destroy in inoxidzable coating
Indium and tin oxide film material；Biggish stress can cause inoxidzable coating broken during alternating temperature is on active service in inoxidzable coating
It is broken, fall off, and then lead to anti-oxidation failure；It needs outwardly to discharge during preparing inoxidzable coating containing Cl, F, COx、
NHx、NOxThe tail gas of equal pernicious gases, causes environmental pollution；The indium tin oxide transparent membrane thermocouple of preparation there are it is at high cost,
The problems such as time-consuming, low efficiency.
Summary of the invention
The present invention is saturating using the method preparation body-centered cubic Ferromanganese Ore phase polycrystalline indium tin oxide of DC pulse magnetron sputtering
Bright film thermocouple has indium tin oxide transparent membrane thermocouple by adjusting the preferred orientation of indium and tin oxide film
Higher Seebeck coefficient, solves the above problem.
The present invention provides one kind to have indium tin oxide the answering on transparent membrane thermocouple of (400) crystal face preferentially
With will have the body-centered cubic Ferromanganese Ore phase polycrystalline indium tin oxygen of (400) crystal face preferentially using the method for DC pulse magnetron sputtering
A pole of transparent membrane thermocouple is made in compound, and the duty ratio of the DC pulse magnetron sputtering is 10-40%.
Duty ratio of the present invention is defined as: target material surface is when carrying out DC pulse magnetron sputtering, a pulse week
Phase is T, in which: the positive voltage time is t1, the negative voltage time is t2, t1+t2=T, duty ratio are
The present invention is preferably thickness >=300nm of indium tin oxide in the transparent membrane thermocouple.
The present invention is preferably that the purity of the indium tin oxide is 99.99%, in which: the mass percent of indium sesquioxide
For 90wt.%, the mass percent of stannic oxide is 10wt.%.
The present invention is preferably that the temperature of the DC pulse magnetron sputtering is natural room temperature.
The present invention is preferably that the working gas of the DC pulse magnetron sputtering is argon, and the purity of argon is 99.99%.
The invention has the following beneficial effects:
The preferred orientation of present invention indium and tin oxide film as obtained by control DC pulse magnetron sputtering, aoxidizes indium tin
Object transparent membrane thermocouple Seebeck coefficient with higher.
Transparent membrane thermocouple of the present invention prepares that simple, at low cost, yield is high, convenient for large-scale industry metaplasia
It produces.
Detailed description of the invention
4 width of attached drawing of the present invention,
Fig. 1 is the structural schematic diagram of Zinc-aluminium membrane electrode mask plate in embodiment 1-4, comparative example 1-2；
Fig. 2 is the structural schematic diagram of indium and tin oxide film electrode mask plate in embodiment 1-4, comparative example 1-2；
Fig. 3 is the structural schematic diagram of transparent membrane thermocouple in embodiment 1-4, comparative example 1-2；
Fig. 4 is the X ray diffracting spectrum of indium and tin oxide film electrode in embodiment 1-4, comparative example 1-2.
Specific embodiment
Following non-limiting embodiments can with a person of ordinary skill in the art will more fully understand the present invention, but not with
Any mode limits the present invention.
Embodiment 1
One kind having application of the indium tin oxide on transparent membrane thermocouple of (400) crystal face preferentially, utilizes direct current arteries and veins
The method of magnetron sputtering is rushed under natural room temperature using quartz plate as base material, mask plate as shown in Figure 1 is placed in substrate material
On material, using Zinc-aluminium as sputtering target material, the purity of Zinc-aluminium is 99.99%, in which: the mass percent of zinc oxide
Mass percent for 98wt.%, aluminum oxide is 2wt.%, and using argon as sputter gas, the purity of argon is 99.99%, into
Row magnetron sputtering prepares Zinc-aluminium membrane electrode in transparent membrane thermocouple, Zinc-aluminium film pole with a thickness of
1500nm；Then, using the method for DC pulse magnetron sputtering under natural room temperature with the above-mentioned stone for being deposited with Zinc-aluminium
English piece is base material, and mask plate as shown in Figure 2 is placed on base material, using indium tin oxide as sputtering target material, indium tin
The purity of oxide is 99.99%, in which: the mass percent of indium sesquioxide is 90wt.%, the quality percentage of stannic oxide
Than for 10wt.%, using argon as sputter gas, the purity of argon is 99.99%, carries out DC pulse magnetron sputtering and prepare transparent membrane
Indium and tin oxide film electrode in thermocouple, indium and tin oxide film pole with a thickness of 700nm, it is as shown in Figure 3 to form structure
Transparent membrane thermocouple, wherein indium and tin oxide film material is in body-centered cubic Ferromanganese Ore phase polycrystalline structure, and is shown weak
(400) Solute Content in Grain, as shown in Figure 4；
Wherein: when preparing Zinc-aluminium membrane electrode, DC pulse magnetron sputtering power work frequency is 100kHz, zinc
Aluminum oxide target surface Sputtering power density is 2.0W/cm2, argon flow is 50sccm, and back end vacuum degree is 3.0 × 10-3Pa splashes
Penetrating vacuum degree is 0.7Pa, sedimentation time 80min；
Wherein: when preparing indium and tin oxide film electrode, DC pulse magnetron sputtering power work frequency is 100kHz, is accounted for
For sky than being 10%, indium tin oxide target surface Sputtering power density is 3.3W/cm2, argon flow is 20sccm, and back end vacuum degree is
3.0×10-3Pa, sputtering vacuum degree are 0.7Pa, sedimentation time 8.10min；
The Seebeck coefficient of prepared transparent membrane thermocouple is 32.78 ± 0.45 μ V/K.
Embodiment 2
One kind having application of the indium tin oxide on transparent membrane thermocouple of (400) crystal face preferentially, utilizes direct current arteries and veins
The method of magnetron sputtering is rushed under natural room temperature using quartz plate as base material, mask plate as shown in Figure 1 is placed in substrate material
On material, using Zinc-aluminium as sputtering target material, the purity of Zinc-aluminium is 99.99%, in which: the mass percent of zinc oxide
Mass percent for 98wt.%, aluminum oxide is 2wt.%, and using argon as sputter gas, the purity of argon is 99.99%, into
Row magnetron sputtering prepares Zinc-aluminium membrane electrode in transparent membrane thermocouple, Zinc-aluminium film pole with a thickness of
1500nm；Then, using the method for rf magnetron sputtering under natural room temperature with the above-mentioned quartz plate for being deposited with Zinc-aluminium
For base material, mask plate as shown in Figure 2 is placed on base material, using indium tin oxide as sputtering target material, the oxidation of indium tin
The purity of object is 99.99%, in which: the mass percent of indium sesquioxide is 90wt.%, and the mass percent of stannic oxide is
10wt.%, using argon as sputter gas, the purity of argon is 99.99%, carries out DC pulse magnetron sputtering and prepares transparent membrane thermoelectricity
Indium and tin oxide film electrode in idol, indium and tin oxide film pole with a thickness of 500nm, form as shown in Figure 3 transparent of structure
Film thermocouple, wherein indium and tin oxide film material is in the body-centered cubic Ferromanganese Ore phase polycrystalline structure of (400) crystal face preferentially, such as
Shown in Fig. 4；
Wherein: when preparing Zinc-aluminium membrane electrode, DC pulse magnetron sputtering power work frequency is 100kHz, zinc
Aluminum oxide target surface Sputtering power density is 2.0W/cm2, argon flow is 50sccm, and back end vacuum degree is 3.0 × 10-3Pa splashes
Penetrating vacuum degree is 0.7Pa, sedimentation time 80min；
Wherein: when preparing indium and tin oxide film electrode, DC pulse magnetron sputtering power work frequency is 100kHz, is accounted for
For sky than being 20%, indium tin oxide target surface Sputtering power density is 3.3W/cm2, argon flow is 20sccm, and back end vacuum degree is
3.0×10-3Pa, sputtering vacuum degree are 0.7Pa, sedimentation time 5.45min；
The Seebeck coefficient of prepared transparent membrane thermocouple is 35.88 ± 0.23 μ V/K.
Embodiment 3
One kind having application of the indium tin oxide on transparent membrane thermocouple of (400) crystal face preferentially, utilizes direct current arteries and veins
The method of magnetron sputtering is rushed under natural room temperature using quartz plate as base material, mask plate as shown in Figure 1 is placed in substrate material
On material, using Zinc-aluminium as sputtering target material, the purity of Zinc-aluminium is 99.99%, in which: the mass percent of zinc oxide
Mass percent for 98wt.%, aluminum oxide is 2wt.%, and using argon as sputter gas, the purity of argon is 99.99%, into
Row magnetron sputtering prepares Zinc-aluminium membrane electrode in transparent membrane thermocouple, Zinc-aluminium film pole with a thickness of
600nm；Then, using the method for DC pulse magnetron sputtering under natural room temperature with the above-mentioned quartz for being deposited with Zinc-aluminium
Piece is base material, and mask plate as shown in Figure 2 is placed on base material, using indium tin oxide as sputtering target material, indium tin oxygen
The purity of compound is 99.99%, in which: the mass percent of indium sesquioxide is 90wt.%, the mass percent of stannic oxide
For 10wt.%, using argon as sputter gas, the purity of argon is 99.99%, carries out DC pulse magnetron sputtering and prepares transparent membrane heat
Indium and tin oxide film electrode in galvanic couple, indium and tin oxide film pole with a thickness of 400nm, form as shown in Figure 3 saturating of structure
Bright film thermocouple, wherein indium and tin oxide film material is in the body-centered cubic Ferromanganese Ore phase polycrystalline structure of (400) crystal face preferentially,
As shown in Figure 4；
Wherein: when preparing Zinc-aluminium membrane electrode, DC pulse magnetron sputtering power work frequency is 100kHz, zinc
Aluminum oxide target surface Sputtering power density is 2.0W/cm2, argon flow is 50sccm, and back end vacuum degree is 3.0 × 10-3Pa splashes
Penetrating vacuum degree is 0.7Pa, sedimentation time 80min；
Wherein: when preparing indium and tin oxide film electrode, DC pulse magnetron sputtering power work frequency is 100kHz, is accounted for
For sky than being 30%, indium tin oxide target surface Sputtering power density is 3.3W/cm2, argon flow is 20sccm, and back end vacuum degree is
3.0×10-3Pa, sputtering vacuum degree are 0.7Pa, sedimentation time 4.12min；
The Seebeck coefficient of prepared transparent membrane thermocouple is 38.92 ± 0.35 μ V/K.
Embodiment 4
One kind having application of the indium tin oxide on transparent membrane thermocouple of (400) crystal face preferentially, utilizes direct current arteries and veins
The method of magnetron sputtering is rushed under natural room temperature using quartz plate as base material, mask plate as shown in Figure 1 is placed in substrate material
On material, using Zinc-aluminium as sputtering target material, the purity of Zinc-aluminium is 99.99%, in which: the mass percent of zinc oxide
Mass percent for 98wt.%, aluminum oxide is 2wt.%, and using argon as sputter gas, the purity of argon is 99.99%, into
Row magnetron sputtering prepares Zinc-aluminium membrane electrode in transparent membrane thermocouple, Zinc-aluminium film pole with a thickness of
1500nm；Then, using the method for DC pulse magnetron sputtering under natural room temperature with the above-mentioned stone for being deposited with Zinc-aluminium
English piece is base material, and mask plate as shown in Figure 2 is placed on base material, using indium tin oxide as sputtering target material, indium tin
The purity of oxide is 99.99%, in which: the mass percent of indium sesquioxide is 90wt.%, the quality percentage of stannic oxide
Than for 10wt.%, using argon as sputter gas, the purity of argon is 99.99%, carries out DC pulse magnetron sputtering and prepare transparent membrane
Indium and tin oxide film electrode in thermocouple, indium and tin oxide film pole with a thickness of 1000nm, it is as shown in Figure 3 to form structure
Transparent membrane thermocouple, wherein indium and tin oxide film material is in the body-centered cubic Ferromanganese Ore phase polycrystalline knot of (400) crystal face preferentially
Structure, as shown in Figure 4；
Wherein: when preparing Zinc-aluminium membrane electrode, DC pulse magnetron sputtering power work frequency is 100kHz, zinc
Aluminum oxide target surface Sputtering power density is 2.0W/cm2, argon flow is 50sccm, and back end vacuum degree is 3.0 × 10-3Pa splashes
Penetrating vacuum degree is 0.7Pa, sedimentation time 80min；
Wherein: when preparing indium and tin oxide film electrode, DC pulse magnetron sputtering power work frequency is 100kHz, is accounted for
For sky than being 40%, indium tin oxide target surface Sputtering power density is 3.3W/cm2, argon flow is 20sccm, and back end vacuum degree is
3.0×10-3Pa, sputtering vacuum degree are 0.7Pa, sedimentation time 9.11min；
The Seebeck coefficient of prepared transparent membrane thermocouple is 40.38 ± 0.48 μ V/K.
Comparative example 1
It, will be as shown in Figure 1 using the method for DC pulse magnetron sputtering using quartz plate as base material under natural room temperature
Mask plate be placed on base material, using Zinc-aluminium as sputtering target material, the purity of Zinc-aluminium is 99.99%, in which:
The mass percent of zinc oxide is 98wt.%, and the mass percent of aluminum oxide is 2wt.%, using argon as sputter gas, argon
Purity be 99.99%, carry out magnetron sputtering prepare Zinc-aluminium membrane electrode, Zinc-aluminium in transparent membrane thermocouple
Film pole with a thickness of 1500nm；Then, it is deposited with using the method for DC pulse magnetron sputtering under natural room temperature with above-mentioned
The quartz plate of Zinc-aluminium is base material, and mask plate as shown in Figure 2 is placed on base material, is with indium tin oxide
Sputtering target material, the purity of indium tin oxide are 99.99%, in which: the mass percent of indium sesquioxide is 90wt.%, dioxy
The mass percent for changing tin is 10wt.%, and using argon as sputter gas, the purity of argon is 99.99%, carries out magnetically controlled DC sputtering system
Indium and tin oxide film electrode in standby transparent membrane thermocouple, indium and tin oxide film pole with a thickness of 600nm, form structure such as
Transparent membrane thermocouple shown in Fig. 3, wherein indium and tin oxide film material is in without body-centered cubic Ferromanganese Ore phase polycrystalline preferentially
Structure, as shown in Figure 4；
Wherein: when preparing Zinc-aluminium membrane electrode, DC pulse magnetron sputtering power work frequency is 100kHz, zinc
Aluminum oxide target surface Sputtering power density is 2.0W/cm2, argon flow is 50sccm, and back end vacuum degree is 3.0 × 10-3Pa splashes
Penetrating vacuum degree is 0.7Pa, sedimentation time 80min；
Wherein: when preparing indium and tin oxide film electrode, indium tin oxide target surface magnetically controlled DC sputtering power density is
3.3W/cm2, argon flow is 20sccm, and back end vacuum degree is 3.0 × 10-3Pa, sputtering vacuum degree are 0.7Pa, and sedimentation time is
10.11min；
The Seebeck coefficient of prepared transparent membrane thermocouple is 4.36 ± 0.28 μ V/K.
Comparative example 2
It, will be as shown in Figure 1 using the method for DC pulse magnetron sputtering using quartz plate as base material under natural room temperature
Mask plate be placed on base material, using Zinc-aluminium as sputtering target material, the purity of Zinc-aluminium is 99.99%, in which:
The mass percent of zinc oxide is 98wt.%, and the mass percent of aluminum oxide is 2wt.%, using argon as sputter gas, argon
Purity be 99.99%, carry out magnetron sputtering prepare Zinc-aluminium membrane electrode, Zinc-aluminium in transparent membrane thermocouple
Film pole with a thickness of 1500nm；Then, zinc-aluminium is deposited with above-mentioned under natural room temperature using the method for rf magnetron sputtering
The quartz plate of oxide is base material, and mask plate as shown in Figure 2 is placed on base material, is sputtering with indium tin oxide
Target, the purity of indium tin oxide are 99.99%, in which: the mass percent of indium sesquioxide is 90wt.%, stannic oxide
Mass percent be 10wt.%, using argon as sputter gas, the purity of argon is 99.99%, carries out DC pulse magnetron sputtering system
Indium and tin oxide film electrode in standby transparent membrane thermocouple, indium and tin oxide film pole with a thickness of 1000nm, form structure
Transparent membrane thermocouple as shown in Figure 3, wherein indium and tin oxide film material is in more without body-centered cubic Ferromanganese Ore phase preferentially
Crystal structure, as shown in Figure 4；
Wherein: when preparing Zinc-aluminium membrane electrode, DC pulse magnetron sputtering power work frequency is 100kHz, zinc
Aluminum oxide target surface Sputtering power density is 2.0W/cm2, argon flow is 50sccm, and back end vacuum degree is 3.0 × 10-3Pa splashes
Penetrating vacuum degree is 0.7Pa, sedimentation time 80min；
Wherein: when preparing indium and tin oxide film electrode, radio-frequency sputtering power work frequency is 13.56MHz, the oxidation of indium tin
Object target surface Sputtering power density is 3.3W/cm2, argon flow is 20sccm, and back end vacuum degree is 3.0 × 10-3Pa sputters vacuum
Degree is 0.7Pa, sedimentation time 21.33min；
The Seebeck coefficient of prepared transparent membrane thermocouple is 3.71 ± 0.19 μ V/K.
Claims (5)
1. one kind has application of the indium tin oxide on transparent membrane thermocouple of (400) crystal face preferentially, it is characterised in that: benefit
There to be the body-centered cubic Ferromanganese Ore phase polycrystalline indium tin oxide system of (400) crystal face preferentially with the method for DC pulse magnetron sputtering
At a pole of transparent membrane thermocouple, the duty ratio of the DC pulse magnetron sputtering is 10-40%.
2. application according to claim 1, it is characterised in that: the thickness of indium tin oxide in the transparent membrane thermocouple
≥300nm。
3. application according to claim 2, it is characterised in that: the purity of the indium tin oxide is 99.99%, in which:
The mass percent of indium sesquioxide is 90wt.%, and the mass percent of stannic oxide is 10wt.%.
4. application according to claim 3, it is characterised in that: the temperature of the DC pulse magnetron sputtering is nature room
Temperature.
5. application according to claim 4, it is characterised in that: the working gas of the DC pulse magnetron sputtering is argon,
The purity of argon is 99.99%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910314709.1A CN109881153B (en) | 2019-04-18 | 2019-04-18 | Application of indium tin oxide with (400) crystal face preference to transparent thin-film thermocouple |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910314709.1A CN109881153B (en) | 2019-04-18 | 2019-04-18 | Application of indium tin oxide with (400) crystal face preference to transparent thin-film thermocouple |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109881153A true CN109881153A (en) | 2019-06-14 |
| CN109881153B CN109881153B (en) | 2020-12-04 |
Family
ID=66937733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910314709.1A Active CN109881153B (en) | 2019-04-18 | 2019-04-18 | Application of indium tin oxide with (400) crystal face preference to transparent thin-film thermocouple |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109881153B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113174569A (en) * | 2021-04-20 | 2021-07-27 | 中国航发北京航空材料研究院 | Method for preparing indium tin oxide-indium zinc oxide film thermocouple with preferred crystal orientation |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103526173A (en) * | 2013-10-30 | 2014-01-22 | 东南大学 | Method for preparing low-indium-content indium tin oxide film through co-doping tin and zinc |
| DE102012217742A1 (en) * | 2012-09-28 | 2014-04-03 | Siemens Aktiengesellschaft | Temperature sensor for gas turbine, has a thermocouple having two electrically conductive half-elements formed by thermal spraying of ceramic, while differing in Seebeck coefficient and connected to each other at a contact point |
| CN104513966A (en) * | 2014-12-25 | 2015-04-15 | 庞凤梅 | Method preparing ITO thin film through radio frequency magnetron sputtering and ITO thin film |
| CN106854754A (en) * | 2016-12-16 | 2017-06-16 | 桂林电子科技大学 | A kind of preparation method of 400 main peak crystal face height preferred orientation ito thin film |
| CN109596041A (en) * | 2018-11-28 | 2019-04-09 | 大连交通大学 | One kind having application of the indium tin oxide on thin film strain meter of (400) crystal face preferentially |
-
2019
- 2019-04-18 CN CN201910314709.1A patent/CN109881153B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012217742A1 (en) * | 2012-09-28 | 2014-04-03 | Siemens Aktiengesellschaft | Temperature sensor for gas turbine, has a thermocouple having two electrically conductive half-elements formed by thermal spraying of ceramic, while differing in Seebeck coefficient and connected to each other at a contact point |
| CN103526173A (en) * | 2013-10-30 | 2014-01-22 | 东南大学 | Method for preparing low-indium-content indium tin oxide film through co-doping tin and zinc |
| CN104513966A (en) * | 2014-12-25 | 2015-04-15 | 庞凤梅 | Method preparing ITO thin film through radio frequency magnetron sputtering and ITO thin film |
| CN106854754A (en) * | 2016-12-16 | 2017-06-16 | 桂林电子科技大学 | A kind of preparation method of 400 main peak crystal face height preferred orientation ito thin film |
| CN109596041A (en) * | 2018-11-28 | 2019-04-09 | 大连交通大学 | One kind having application of the indium tin oxide on thin film strain meter of (400) crystal face preferentially |
Non-Patent Citations (1)
| Title |
|---|
| 吴勐等: ""氧氩体积百分比对ITO薄膜性能的影响"", 《材料保护》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113174569A (en) * | 2021-04-20 | 2021-07-27 | 中国航发北京航空材料研究院 | Method for preparing indium tin oxide-indium zinc oxide film thermocouple with preferred crystal orientation |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109881153B (en) | 2020-12-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI493728B (en) | Transparent conductive film layered structure and method for producing the same, and silicon based thin film solar cell | |
| CN110004410A (en) | Application of the indium tin oxide on transparent membrane thermocouple with (400) crystal face preferentially | |
| CN101158049A (en) | Method for preparing P-type transparent conductive oxide CuAlO2 film | |
| CN101908583B (en) | Preparation method of CIGS (Copper, Indium, Gallium and Selenide) thin film solar cell window layer | |
| CN101985740A (en) | Method for annealing aluminum-doped zinc oxide transparent conductive thin film | |
| CN109881153A (en) | Application of the indium tin oxide on transparent membrane thermocouple with (400) crystal face preferentially | |
| CN106282924B (en) | One kind having the preparation method of the indium and tin oxide film material of (400) crystal face preferentially | |
| Si-Ning et al. | Fabrication and characterization of the AZO/Ag/AZO transparent conductive films prepared by RF magnetron sputtering using powder targets | |
| CN103924191A (en) | Method for plating ITO thin film on substrate | |
| CN109596041A (en) | One kind having application of the indium tin oxide on thin film strain meter of (400) crystal face preferentially | |
| TW201736271A (en) | Method for preparing amorphous composite metal oxide | |
| CN108039379B (en) | A kind of zinc oxide combination electrode film and preparation method thereof that metal foil surface is metal-doped | |
| CN101882632B (en) | Glass substrate matte structure ZnO film and application | |
| JPH04272612A (en) | Transparent electrode | |
| CN103081028A (en) | Multilayer transparent electroconductive film and method for manufacturing same, as well as thin-film solar cell and method for manufacturing same | |
| JPH0987833A (en) | Production of transparent electrically conductive film | |
| Ellmer et al. | Relations between texture and electrical parameters of thin polycrystalline zinc oxide films | |
| CN103924168A (en) | Multi-element alloy material and solar cell containing back electrode layer formed therefrom | |
| CN102863961A (en) | Cerium-doped yttrium-aluminum borate luminescent material, preparation method and application thereof | |
| CN105517335A (en) | Touch screen circuit board | |
| CN102650044B (en) | A kind of preparation method of SGZO-Au-SGZO nesa coating | |
| CN101834009B (en) | Low-indium doping amount zinc oxide transparent conducting film and preparation method thereof | |
| CN205486019U (en) | Touch screen circuit board | |
| JP5807909B2 (en) | Film formation method | |
| Lyubenova et al. | Electrical and Morphological study of Mo thin films for solar cell applications |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |