CN109587846A - Micro- heating plate of composite construction and preparation method thereof - Google Patents
Micro- heating plate of composite construction and preparation method thereof Download PDFInfo
- Publication number
- CN109587846A CN109587846A CN201811622329.6A CN201811622329A CN109587846A CN 109587846 A CN109587846 A CN 109587846A CN 201811622329 A CN201811622329 A CN 201811622329A CN 109587846 A CN109587846 A CN 109587846A
- Authority
- CN
- China
- Prior art keywords
- substrate
- layer
- insulating layer
- heating
- thermal insulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 75
- 239000002131 composite material Substances 0.000 title claims abstract description 28
- 238000010276 construction Methods 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 103
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000009413 insulation Methods 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000010453 quartz Substances 0.000 claims abstract description 16
- 238000005516 engineering process Methods 0.000 claims abstract description 12
- 230000008569 process Effects 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 238000011946 reduction process Methods 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 238000001291 vacuum drying Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 238000005554 pickling Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 239000005439 thermosphere Substances 0.000 claims 1
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 206010054949 Metaplasia Diseases 0.000 description 1
- -1 PVD deposition Pt Chemical class 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007084 catalytic combustion reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Micromachines (AREA)
Abstract
The invention discloses micro- heating plates of a kind of composite construction and preparation method thereof.The production method includes: to process to form cavity structure in the second surface of one first substrate；It is successively grown in one second substrate surface and forms thermal insulation layer and the first insulating layer；First insulating layer is bonded with the first surface of first substrate, the first surface and second surface are opposite facing, remove second substrate later；Heating layer, second insulating layer and test layer are sequentially formed on the thermal insulation layer.Wherein quartz substrate, monocrystalline substrate can be respectively adopted in the first, second substrate.The structure of micro- heating plate of composite construction provided by the invention is simple, secured, and high reliablity, stability is good, especially has efficient heating properties, while its preparation process is simply easily operated, can use MEMS technology Rapid Implementation, is suitable for large-scale production.
Description
Technical field
The present invention relates to a kind of micro- heating plate and preparation method thereof, in particular to micro- heating plate of a kind of composite construction and its
Production method belongs to semiconductor technical field of micro and nano fabrication.
Background technique
Gas sensor mainly has semiconductor-type, electric chemical formula, catalytic combustion type etc. several at this stage, wherein semiconductor-type
The most practical a kind of gas sensor of gas sensor.It has it is low in cost, be simple to manufacture, high sensitivity, fast response time,
The advantages that service life is long, and circuit low to humidity sensitive is simple.Mature semiconductor-type gas sensor is at present with micro- heating plate
Basis coats sensitive material above it, and sensitive material is made to work at a certain temperature, and semiconductor-type gas sensing may be implemented
The works fine of device.
For currently used micro- heating plate mainly based on ceramic bases or silicon base, ceramic bases are mainly used for traditional height
Temperature sensitive material is heated, and relative volume is larger, for the more of traditional gas sensor.The micro- heating plate of silicon substrate is mainly with outstanding
Based on hollow structure, body of overleaf beginning to speak, surface silicon nitride, silica form composite layer, for insulation and thermal insulation layer.From the U.S.
Since proposing the micro- heating plate of MEMS earliest, lot of domestic and international researcher has carried out a large amount of research to it, for example, some
The micro- heating plate research carried out using SOI silicon as substrate is reported in document.But there is also yields for the micro- heating plate of current MEMS silicon substrate
It is low, be difficult to the shortcomings that resistant to high temperatures, support film is easily damaged etc..Specifically, the micro- heating plate one of existing MEMS silicon substrate
As using the back side formed cavity, surface silicon nitride, silica etc. formed supporting layer, insulation insulating layer, then formed above
Heating structure, still, one side silicon itself are the good conductors of heat, and thermal loss will affect working efficiency during the work time, separately
On the one hand when etching silicon back chamber, Surface Oxygen SiClx and silicon nitride film is often damaged, its yield of devices is influenced.
Summary of the invention
The main purpose of the present invention is to provide a kind of micro- heating plate of composite construction, manufacture craft is simple, can be in height
Temperature lower work, long service life, to overcome the deficiencies in the prior art.
Another object of the present invention is to provide a kind of methods of micro- heating plate for making the composite construction.
For realization aforementioned invention purpose, the technical solution adopted by the present invention includes:
The embodiment of the invention provides a kind of micro- heating plates of composite construction comprising the first substrate and is successively set on
The first insulating layer, thermal insulation layer, heating layer, second insulating layer and the test layer of first substrate first surface, first substrate
Second surface is formed with cavity structure, the second surface and the opposite facing setting of first surface.
The embodiment of the invention also provides a kind of production methods of micro- heating plate of composite construction comprising:
It processes to form cavity structure in the second surface of one first substrate；
It is successively grown in one second substrate surface and forms thermal insulation layer and the first insulating layer；
First insulating layer is bonded with the first surface of first substrate, the first surface and second surface phase
Back to removing second substrate later；
Heating layer, second insulating layer and test layer are sequentially formed on the thermal insulation layer.
In some embodiments, aforementioned first substrate uses quartz substrate, especially high-purity quartz substrate.
In some embodiments, aforementioned second substrate uses monocrystalline substrate (that is, Silicon Wafer).
The embodiment of the invention also provides micro- heating plates of the composite construction in preparing the application in micro- heating sensor.
Compared with prior art, simple and strong in structure, the high reliablity of micro- heating plate of composite construction provided by the invention,
Stability is good, especially has efficient heating properties, while its preparation process is simply easily operated, can use MEMS work
Skill Rapid Implementation, is adapted for industrialized production.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of micro- heating plate of composite construction in an exemplary embodiments of the invention；
Fig. 2 is a kind of preparation technology flow chart of micro- heating plate of composite construction in an exemplary embodiments of the invention；
Fig. 3 is a kind of preparation process schematic diagram of micro- heating plate of composite construction in an exemplary embodiments of the invention.
Specific embodiment
As previously mentioned, inventor is studied for a long period of time and largely practiced in view of many defects of the existing technology, obtain
To propose technical solution of the present invention.The technical solution, its implementation process and principle etc. will be further explained as follows
It is bright.
A kind of production method of the micro- heating plate for composite construction that the one aspect of the embodiment of the present invention provides includes:
It processes to form cavity structure in the second surface of one first substrate；
It is successively grown in one second substrate surface and forms thermal insulation layer and the first insulating layer；
First insulating layer is bonded with the first surface of first substrate, the first surface and second surface phase
Back to removing second substrate later；
Heating layer, second insulating layer and test layer are sequentially formed on the thermal insulation layer.
The test layer includes test electrode.The test electrode can be with patterned structures.
In some embodiments, the production method specifically includes: using three-dimensional hot press forming technology, described the
The second surface of one substrate is processed to form cavity structure.Wherein, hot-forming by using three-dimensional, it can be to avoid conventional wet process
Compound or dry etching technique can significantly improve it to destruction caused by the heating of substrate face or test electrode
Yield.
In some embodiments, the production method specifically includes: second substrate is adequately cleaned,
The mode of cleaning include pickling, alkali cleaning, organic solvent cleaning, deionized water cleaning in the combination of any one or more, it
Vacuum drying or the drying in nitrogen atmosphere afterwards, then successively grown in the second substrate surface and form thermal insulation layer and the first insulating layer.
In some embodiments, the production method specifically includes: exhausted by described first using anode linkage technique
Edge layer is bonded with the first surface of first substrate.Using this bonding technology, two kinds of stronger knots of substrate can be made
Altogether, guarantee the mechanical strength of device.
In some embodiments, the production method specifically includes: second substrate is removed using reduction process,
To make the thermal insulation layer expose, the first substrate is etched later, makes the cavity structure axially through the first substrate.It is such
Operation, can make device general levels thinner, can preferably control the fuel factor of heating plate.
In some embodiments, the production method specifically includes: grown using CVD method to be formed it is described heat-insulated
At least one of layer, the first insulating layer, second insulating layer.
In some embodiments, the production method specifically includes: grown using PVD method to be formed the heating layer,
At least one of test layer.
In some more specific embodiments, the production method be may include steps of:
(1) using three-dimensional hot press forming technology, a cavity is formed at the first substrate (such as high-purity quartz substrate) back side
Structure (also known as back chamber), can be round, rectangular etc., the length size of cavity can be in 100um-5000um or so.It is excellent
Choosing, in this step, the cavity structure is not along axial direction completely through first substrate, that is, in the cavity structure bottom
It is remaining that there are also the composition materials of the first substrate.It so can control the thermal diffusion of heating plate, so that heating plate has good add
Thermal effect.
(2) by the second substrate (such as monocrystalline substrate) sufficiently clean, including pickling, alkali cleaning, organic solvent cleaning, go from
Sub- water cleaning, it is sufficiently dry in vacuum drying oven or nitrogen drying later.
(3) heat insulation layer (such as silicon nitride layer) and first is grown on a side surface of the second substrate in the way of CVD absolutely
Edge layer (such as silicon oxide layer).
(4) anode linkage technique is utilized, the first surface of insulating layer and the first substrate face are bonded together.
(5) remaining second substrate is removed by reduction process, exposes heat insulation layer.
(6) the first substrate is carried on the back extra substrate material above chamber (such as quartz) to remove with dry etch process, exposes the
One insulating layer.So device general levels can be made thinner, can preferably control the fuel factor of heating plate.
(7) PVD deposition heating layer is utilized in insulation layer surface.
(8) second insulating layer is deposited in the way of CVD in heating layer surface.
(9) test layer is deposited in the way of PVD on second insulating layer surface.
A kind of micro- heating plate for composite construction that the other side of the embodiment of the present invention provides include the first substrate and
It is successively set on the first insulating layer, thermal insulation layer, heating layer, second insulating layer and the test layer of the first substrate first surface, it is described
The second surface of first substrate is formed with cavity structure, the second surface and the opposite facing setting of first surface.
Further, first substrate includes quartz substrate.
Further, second substrate includes monocrystalline substrate.
Further, first insulating layer, second insulating layer material include silica, such as can be silica
Layer.
Further, the material of the thermal insulation layer includes silicon nitride, such as can be silicon nitride layer.
Further, the material of the heating layer includes metal, such as can be any one in Pt, Mo, W or two kinds
The structured metal layer that above combination or its alloy are formed.
Further, the material of the test layer includes metal, such as can be the gold that Au and/or Ag or its alloy are formed
Belong to structure sheaf.
In some embodiments, first substrate and the first insulating layer by anode linkage technique in conjunction with.
It is more preferred, first insulating layer, second insulating layer with a thickness of 100nm-5000nm.
It is more preferred, the thermal insulation layer with a thickness of 100nm-5000nm.
It is more preferred, the heating layer with a thickness of 100nm-1000nm.
It is more preferred, the test layer with a thickness of 100nm-1000nm.
More preferred, the cavity structure is axially through first substrate.
More preferred, the length of the cavity structure is having a size of 100 μm -5000 μm.
It is arranged by using structural parameters above-mentioned, can enables the good combination of each structure sheaf in the heating plate
Together, facilitate good heating effect, and the yield of integral device can be made to be controlled in higher level.
The other side of the embodiment of the present invention additionally provides micro- heating plate of the composite construction and passes in preparing micro- heating
Application in sensor.For example, described device includes micro- heating of aforementioned composite construction the embodiment of the invention provides a kind of device
Plate, it is preferred that the apparatus may include micro- heating sensors.
The structure of micro- heating plate of composite construction provided by the invention is simple, secured, high reliablity, stability are good, heating
Performance efficiency, while its preparation process is simply easily operated, can use MEMS technology Rapid Implementation, is adapted for industrial metaplasia
It produces.
Clear, complete description is carried out to technical solution of the present invention below in conjunction with attached drawing and typical case.
Refering to Figure 1, in an exemplary embodiments of the invention, a kind of micro- heating plate of composite construction includes the
One substrate 1 and the first insulating layer 2, thermal insulation layer 3, the heating layer 4, second insulating layer for being successively set on the first substrate first surface
5 and test layer 6, the second surface of first substrate be formed with cavity structure 7, the second surface and first surface are opposite facing
Setting.Preferably, the cavity structure is axially through first substrate.
Further, first substrate can use high-purity quartz substrate.
Further, second substrate can use Silicon Wafer, i.e. monocrystalline substrate.
Further, first insulating layer, second insulating layer may each be silicon oxide layer.
Further, the thermal insulation layer can be silicon nitride layer.
Further, the heating layer can be by any one or the two or more combinations or its conjunction in Pt, Mo, W
Gold is formed.
Further, the test layer can be is formed by Au and/or Ag or its alloy.
Further, first substrate can be with the first insulating layer by conjunction with anode linkage technique.
Further, first insulating layer, second insulating layer thickness can be 100nm-5000nm.
Further, the thermal insulation layer with a thickness of 100nm-5000nm.
Further, the heating layer with a thickness of 100nm-1000nm.
Further, the test layer with a thickness of 100nm-1000nm.
Further, the length of the cavity structure is having a size of 100 μm -5000 μm.
Micro- heating plate of the embodiment can use MEMS technology production, for example, a kind of method for making micro- heating plate
It can be refering to shown in Fig. 2, Fig. 3.The production method specifically comprises the following steps:
(1) prepare high-purity quartz substrate 1, monocrystalline substrate 8, wherein the thickness of quartz substrate can be about 200-
The thickness of 500um, monocrystalline substrate can be about 200-500um.
(2) monocrystalline substrate is sufficiently cleaned, comprising: a, with the concentrated sulfuric acid, 85 DEG C are boiled 15 minutes；B, it then uses
50wt% potassium hydroxide solution impregnates 10min；C, with acetone soln ultrasound 15min, deionized water solution ultrasound 15min；Later
It is sufficiently dry (120 DEG C of drying about 1h) in vacuum drying oven or nitrogen drying.
(3) growth as the silicon nitride layer 3 of heat insulation layer and is made on a side surface of monocrystalline substrate 8 in the way of CVD
For the silicon oxide layer 2 of insulating layer.Silicon nitride layer 3, silicon oxide layer 2 thickness can be respectively 100nm-5000nm.
(4) using three-dimensional hot press forming technology, hot pressing temperature is controlled in 500-800min, pressure is in 20-100kg, in stone
1 back side of English substrate forms a cavity structure 7 ' (also known as back chamber), can be round, rectangular etc., length size can be 100
μm -5000 μm or so.In this step, the cavity structure is not along axial direction completely through first substrate, that is, in the cavity
There are also the composition materials of the first substrate to remain for structural base, thickness about 20-50um.
(5) anode linkage technique is utilized, control bonding temperature is in 200-500 degree, and pressure is in 10-200MPa, absolutely by first
Edge layer surface is bonded together with the first substrate face.
(6) remaining monocrystalline substrate 8 is removed by reduction process, exposes silicon nitride layer 3.
(7) quartz substrate is carried on the back substrate material extra above chamber to remove with dry etch process, forms cavity structure 7,
And expose silicon oxide layer 2.
(8) heating layer 4 is formed using the metals such as PVD deposition Pt, Mo, W or its alloy on 3 surface of silicon nitride layer.The heating
The thickness of layer can be 100nm-1000nm.
(9) on 4 surface of heating layer, cvd silicon oxide etc. forms insulating layer 5 in the way of CVD.The thickness of the insulating layer can be with
For 100nm-5000nm.
(10) metals such as Au, Ag are deposited in the way of PVD on 5 surface of insulating layer or its alloy is formed plus test layer 6.The survey
The thickness for trying layer can be 100nm-1000nm.
The process conditions of the CVD, PVD, the dry etching that use in aforementioned production method etc. may each be known to industry.
In the production method that the embodiment provides, by the bonding face of Silicon Wafer, being pre-formed certain thickness oxygen
Change layer and nitration case as support, and, in the good cavity structure of quartz substrate back side pre-production, then by Silicon Wafer and high-purity
Quartz substrate combines, and forms the synthesis of silicon and quartz, can then form micro- heating using quartz substrate as support construction
Plate, up to achieving efficient heating properties.The production method is simply easily operated, and it is quickly real to can use MEMS technology
Apply, be suitable for large-scale production, and make the simple and strong in structure of micro- heating plate of composite construction formed, heating efficiency it is high,
High reliablity, good operating stability.
Technology contents and technical characteristic of the invention have revealed that as above, however those skilled in the art still may base
Make various replacements and modification without departing substantially from spirit of that invention, therefore, the scope of the present invention in teachings of the present invention and announcement
It should be not limited to the revealed content of embodiment, and should include various without departing substantially from replacement and modification of the invention, and be this patent Shen
Please claim covered.
Claims (10)
1. a kind of production method of micro- heating plate of composite construction, characterized by comprising:
It processes to form cavity structure in the second surface of one first substrate；
It is successively grown in one second substrate surface and forms thermal insulation layer and the first insulating layer；
First insulating layer is bonded with the first surface of first substrate, the first surface is opposite with second surface
It is right, second substrate is removed later；
Heating layer, second insulating layer and test layer are sequentially formed on the thermal insulation layer.
2. production method as described in claim 1, it is characterised in that specifically include: using three-dimensional hot press forming technology, in institute
The second surface for stating the first substrate is processed to form cavity structure.
3. production method as described in claim 1, it is characterised in that specifically include: being carried out to second substrate adequately clear
Wash, the mode of cleaning include pickling, alkali cleaning, organic solvent cleaning, deionized water cleaning in the combination of any one or more,
Vacuum drying later or the drying in nitrogen atmosphere, then successively grown in the second substrate surface and form thermal insulation layer and the first insulation
Layer.
4. production method as described in claim 1, it is characterised in that specifically include: using anode linkage technique by described first
Insulating layer is bonded with the first surface of first substrate.
5. production method as described in claim 1, it is characterised in that specifically include: using reduction process removal second lining
Bottom etches the first substrate later, makes the cavity structure axially through the first substrate so that the thermal insulation layer be made to expose.
6. production method as described in claim 1, it is characterised in that specifically include: grown using CVD method to be formed it is described every
At least one of thermosphere, the first insulating layer, second insulating layer；And/or it is grown using PVD method and to form the heating layer, test
At least one of layer.
7. manufacturing method according to claim 1, it is characterised in that: first substrate includes quartz substrate；And/or
Second substrate includes monocrystalline substrate；And/or the material of first insulating layer, second insulating layer includes silica；
And/or the material of the thermal insulation layer includes silicon nitride；And/or the material of the heating layer includes metal, the metal includes
Any one in Pt, Mo, W or two or more combinations；And/or the material of the test layer includes metal, the metal packet
Include Au and/or Ag；And/or first substrate and the first insulating layer by anode linkage technique in conjunction with；And/or described first
Insulating layer, second insulating layer with a thickness of 100nm-5000nm；And/or the thermal insulation layer with a thickness of 100nm-5000nm；
And/or the heating layer with a thickness of 100nm-1000nm；And/or the test layer with a thickness of 100nm-1000nm；With/
Or, the cavity structure is axially through first substrate；And/or the length of the cavity structure is having a size of 100 μ
m-5000μm。
8. a kind of micro- heating plate of composite construction, it is characterised in that including the first substrate and be successively set on the first substrate first
The second surface of first insulating layer, thermal insulation layer, heating layer, second insulating layer and the test layer on surface, first substrate is formed
There are cavity structure, the second surface and the opposite facing setting of first surface.
9. micro- heating plate of composite construction according to claim 8, it is characterised in that: first substrate includes quartz lining
Bottom；And/or the material of first insulating layer, second insulating layer includes silica；And/or the material of the thermal insulation layer includes
Silicon nitride；And/or the material of the heating layer includes metal, the metal include any one or two kinds in Pt, Mo, W with
On combination；And/or the material of the test layer includes metal, the metal includes Au and/or Ag；And/or described first
Substrate and the first insulating layer by anode linkage technique in conjunction with.
10. micro- heating plate of composite construction according to claim 8 or claim 9, it is characterised in that: first insulating layer,
Two insulating layers with a thickness of 100nm-5000nm；And/or the thermal insulation layer with a thickness of 100nm-5000nm；And/or it is described
Heating layer with a thickness of 100nm-1000nm；And/or the test layer with a thickness of 100nm-1000nm；And/or the sky
Cavity configuration is axially through first substrate；And/or the length of the cavity structure is having a size of 100 μm -5000 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811622329.6A CN109587846A (en) | 2018-12-28 | 2018-12-28 | Micro- heating plate of composite construction and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811622329.6A CN109587846A (en) | 2018-12-28 | 2018-12-28 | Micro- heating plate of composite construction and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109587846A true CN109587846A (en) | 2019-04-05 |
Family
ID=65933358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811622329.6A Pending CN109587846A (en) | 2018-12-28 | 2018-12-28 | Micro- heating plate of composite construction and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109587846A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116170906A (en) * | 2022-12-06 | 2023-05-26 | 东北林业大学 | MEMS micro-heater of supporting beam and manufacturing method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101608962A (en) * | 2009-06-09 | 2009-12-23 | 华中科技大学 | A kind of micro Pirani gage |
| CN106744652A (en) * | 2017-02-10 | 2017-05-31 | 苏州甫电子科技有限公司 | Micro- heating chip and its manufacture method and the applications of MEMS of composite construction |
| CN107500244A (en) * | 2017-08-15 | 2017-12-22 | 河北美泰电子科技有限公司 | The manufacture method of MEMS flow sensor |
| KR101842648B1 (en) * | 2017-01-25 | 2018-03-28 | 한국산업기술대학교산학협력단 | Harmful Gas Sensor of MEMS Structure having Embedded Heater |
| CN108369204A (en) * | 2015-12-14 | 2018-08-03 | Ams传感器英国有限公司 | Sensed layer constructs |
| CN209448911U (en) * | 2018-12-28 | 2019-09-27 | 苏州甫一电子科技有限公司 | Micro- heating plate of composite construction |
-
2018
- 2018-12-28 CN CN201811622329.6A patent/CN109587846A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101608962A (en) * | 2009-06-09 | 2009-12-23 | 华中科技大学 | A kind of micro Pirani gage |
| CN108369204A (en) * | 2015-12-14 | 2018-08-03 | Ams传感器英国有限公司 | Sensed layer constructs |
| KR101842648B1 (en) * | 2017-01-25 | 2018-03-28 | 한국산업기술대학교산학협력단 | Harmful Gas Sensor of MEMS Structure having Embedded Heater |
| CN106744652A (en) * | 2017-02-10 | 2017-05-31 | 苏州甫电子科技有限公司 | Micro- heating chip and its manufacture method and the applications of MEMS of composite construction |
| CN107500244A (en) * | 2017-08-15 | 2017-12-22 | 河北美泰电子科技有限公司 | The manufacture method of MEMS flow sensor |
| CN209448911U (en) * | 2018-12-28 | 2019-09-27 | 苏州甫一电子科技有限公司 | Micro- heating plate of composite construction |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116170906A (en) * | 2022-12-06 | 2023-05-26 | 东北林业大学 | MEMS micro-heater of supporting beam and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106744652B (en) | The micro- heating chip of the MEMS of composite construction and its manufacturing method and application | |
| CN209448911U (en) | Micro- heating plate of composite construction | |
| JP2005534510A5 (en) | ||
| CN110284097B (en) | Environmental barrier coating and coating method and application thereof | |
| TW201105571A (en) | Method for fabricating hollow nanotube structure | |
| CN110417374A (en) | Film bulk acoustic resonator and preparation method thereof | |
| CN109587846A (en) | Micro- heating plate of composite construction and preparation method thereof | |
| CN105679882A (en) | Method of etching polycrystalline silicon sheet cut by diamond wire | |
| CN113979402A (en) | MEMS infrared light source and preparation method thereof | |
| CN110194448A (en) | A kind of two-dimensional material of graphene coated or the manufacturing method of graphene | |
| JP5840869B2 (en) | Textured single crystal | |
| CN106185784A (en) | MEMS infrared light source based on wet pre-release structure and preparation method thereof | |
| US20140314998A1 (en) | Porous material for thermal and/or electrical isolation and methods of manufacture | |
| CN104599949A (en) | Processing method of deep etching smooth surface based on SiC substrate slice | |
| CN209472775U (en) | The micro- heating plate of ceramics of multilayer beam type structure | |
| CN107400876A (en) | A kind of method that nano-diamond membrane is graphically made using copper film | |
| CN112938892B (en) | Porous silicon heat insulation supported high-temperature heat flow sensor and preparation method thereof | |
| CN104089990B (en) | A kind of relative humidity sensor of single-chip integration porous silicon and preparation method thereof | |
| CN116334554A (en) | Production process of platinum resistance temperature sensor chip | |
| CN214360245U (en) | Ceramic suspension beam type MEMS micro-heating plate | |
| CN109467044A (en) | Single chip integrated CMOS adds the micro-heater and preparation method of MEMS | |
| CN109495994A (en) | Micro- heating plate of ceramics of multilayer beam type structure and preparation method thereof | |
| CN104715994B (en) | Inductive type plasma process chamber and its anticorrosive insulated window and manufacture method | |
| CN114112085A (en) | Manufacturing method of high-efficiency MEMS high-temperature film thermocouple sensor | |
| CN113461442A (en) | Method for improving CMAS resistance of thermal barrier coating and CMAS-resistant workpiece |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |