CN109585574B - Method for adjusting response wavelength of GaSb nanowire detector - Google Patents
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- 239000002070 nanowire Substances 0.000 title claims abstract description 81
- 229910005542 GaSb Inorganic materials 0.000 title claims abstract description 77
- 230000004044 response Effects 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 33
- 230000005684 electric field Effects 0.000 claims abstract description 28
- 238000005516 engineering process Methods 0.000 claims abstract description 15
- 238000000609 electron-beam lithography Methods 0.000 claims abstract description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- 238000005844 autocatalytic reaction Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 2
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 abstract description 21
- 230000008859 change Effects 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000006854 communication Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007605 air drying Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a method for adjusting the response wavelength of a GaSb nanowire detector, which comprises the steps of preparing ITO (indium tin oxide) structural patterns on two sides of a single GaSb nanowire by using an electron beam lithography technology, applying an electric field to two ends of an ITO material and adjusting the electric field to realize the adjustment of the surface plasma resonance frequency of the ITO material, and changing the characteristic response wavelength of the GaSb nanowire detector by adjusting the surface plasma resonance frequency of the ITO material so as to realize the continuous adjustment of the response wavelength of the GaSb nanowire detector. According to the method, the GaSb-based nanowire serves as a main body of the detector, the ITO graph structure is adopted to generate surface plasmas, electric fields are applied to the upper end and the lower end of the ITO graph structure, the dielectric constant of the ITO material is changed by adjusting the electric field intensity, the resonance frequency of the ITO material is further adjusted, and the adjustment of the characteristic response wavelength of the GaSb-based nanowire detector is achieved.
Description
Technical Field
The invention belongs to the field of nano photoelectron, relates to a GaSb nanowire detector, and particularly relates to a method for adjusting the response wavelength of the GaSb nanowire detector.
Background
Infrared detectors are of great importance in both military and civilian applications, with GaSb-based 1.55 μm band infrared detectors being an important component of laser communications. The information security in the laser communication process is concerned against life and death of both parties, and the advanced encryption transmission means can effectively ensure the security of the information and avoid the information from being acquired and decrypted by enemies. The detector with the continuously adjustable wavelength has obvious advantages in the aspect, the detector with the continuously adjustable wavelength and the laser are used as a receiving end and a transmitting end, and the communication is carried out in a mode of transmitting information when the wavelengths of the receiving end and the transmitting end are synchronous, so that an enemy cannot predict a transmitted waveband and acquire continuous and effective information, and the information safety in the communication process is ensured.
At present, the commonly used means for adjusting the response wavelength of the detector is to change the forbidden bandwidth of the material, but the wavelength of the detector obtained by the method is fixed, and the in-situ dynamic continuous adjustment of the wavelength cannot be realized. The surface plasma is an important means for changing the detection and luminescence properties of semiconductor materials and devices, the metal surface plasma enhancement can improve the responsivity of the detector by 2-3 orders of magnitude, and the surface plasma modification can change the luminescence wavelength of the materials; and little research has been done on changing the material detection wavelength by surface plasmons.
The performance of metal surface plasmon enhanced detectors has been widely studied, and enhancement of the performance of the detectors can be achieved when the resonance frequency of the surface plasmon matches the response wavelength of the detector. If the frequency of the surface plasma is within the response wavelength range of the wide-spectrum detector, the improvement of the responsivity of the corresponding wavelength can be realized, so that the characteristic response of the wavelength is realized; when the surface plasmon resonance frequency is changed, the characteristic response wavelength of the probe will also change accordingly. Therefore, the resonance frequency of the surface plasma and the characteristic response wavelength of the detector are adjusted, and the problem that the response wavelength of the detector cannot be dynamically adjusted by a conventional means is solved.
Disclosure of Invention
The invention provides a method for adjusting the response wavelength of a GaSb nanowire detector, which adjusts the surface plasma resonance frequency in the device structure of the GaSb nanowire detector so as to adjust the characteristic response wavelength of the GaSb nanowire detector. The method provided by the invention aims at realizing the adjustment of the response wavelength of the GaSb nanowire detector, grows the GaSb nanowire by adopting a molecular beam epitaxy technology, and then transfers the epitaxially grown GaSb nanowire to SiO2On a substrate, followed by magnetron sputtering and electron beam lightAn ITO (indium tin oxide) pattern structure is formed on two sides of a GaSb nanowire by an etching technology, a GaSb nanowire detector with surface plasma enhanced is constructed, an electric field is applied to two ends of the ITO, the surface plasma resonance frequency is adjusted by adjusting the electric field at the two ends of the ITO, and then the characteristic response wavelength of the GaSb nanowire detector is changed, so that the continuous adjustment of the response wavelength of the GaSb nanowire detector is realized. According to the method, the GaSb-based nanowire serves as a main body of the detector, the ITO graph structure is adopted to generate surface plasmas, electric fields are applied to the upper end and the lower end of the ITO graph structure, the dielectric constant of the ITO material is changed by adjusting the electric field intensity, the resonance frequency of the ITO material is further adjusted, and the adjustment of the characteristic response wavelength of the GaSb-based nanowire detector is achieved.
In order to realize the purpose, the adopted technical scheme is as follows:
the method realizes the adjustment of the surface plasma resonance frequency of an ITO material by adjusting an electric field applied to the ITO material, and further realizes the dynamic adjustment of the response wavelength of the GaSb-based nanowire detector.
The method for adjusting the response wavelength of the GaSb nanowire detector comprises the following specific implementation methods:
the method comprises the following steps: growing GaSb nanowires on a Si substrate by using Ga metal liquid drops through autocatalysis by adopting Molecular Beam Epitaxy (MBE);
step two: stripping the GaSb nanowire from the Si substrate, and transferring the single GaSb nanowire to the surface of the Si substrate;
step three: preparing ITO pattern structure around the nano wire by electron beam lithography, and preparing SiO on the surface of the Si substrate by PECVD except other parts of the ITO pattern structure2Preparing electrodes at the upper end and the lower end of the ITO to construct a GaSb nanowire detector prototype device with the electric field for adjusting the surface plasma enhanced frequency;
step four: and applying electric fields with different sizes to two ends of the ITO to obtain the continuous adjustability of the response wavelength of the GaSb single nanowire detector for the surface plasma frequency enhancement through electric field adjustment.
The invention has the beneficial effects that: according to the invention, the constant electric field is applied between the upper surface and the lower surface of the ITO graphic film, the change of the surface plasma resonance frequency of the ITO material is realized by adjusting the electric field applied on the ITO material, and the dynamic adjustment of the response wavelength of the GaSb nanowire detector device is further realized, so that the problems that the response wavelength of the GaSb nanowire detector device in the prior art cannot be dynamically adjusted in real time and the adjustment technology is complex are solved, and the further wide application of the GaSb nanowire detector device in the field of nano optoelectronics is promoted.
Drawings
Fig. 1 is a schematic structural diagram of a GaSb nanowire detector device in the method of the present invention.
Detailed Description
The following description of specific embodiments of the present invention is provided in connection with examples to facilitate a better understanding of the present invention.
The invention provides a method for adjusting the response wavelength of a GaSb nanowire detector, which realizes the adjustment of the surface plasma resonance frequency of an ITO material by adjusting an electric field applied on the ITO material, and further realizes the dynamic adjustment of the response wavelength of the GaSb nanowire detector. The method for adjusting the response wavelength of the GaSb nanowire detector, which is proposed by the present invention, is described in detail below with reference to the accompanying drawings and examples.
In the embodiment, the nanowire material is a GaSb nanowire, the GaSb nanowire grows on a Si substrate by adopting a molecular beam epitaxy technology, the material for adjusting the surface plasma resonance frequency is an ITO material, the ITO material is prepared on two sides of the GaSb nanowire material by adopting an electron beam lithography technology, a metal electrode positive electrode is preferably an Au electrode, a negative electrode is preferably an Ni/Au electrode, and the constant electric field intensity applied to the ITO material can be adjusted within 0-200V.
Fig. 1 is a schematic structural diagram of a GaSb nanowire detector device in the method provided by the present invention, which includes: a single GaSb nanowire 1, electrodes 2 at two ends of the GaSb nanowire, a Si substrate 3, and a natural oxide layer SiO on the surface of the Si substrate2Layer 4, SiO PECVD deposition in the outer region of the ITO film2Layer 5, ITO regular periodic pattern thin film layer 6, ITO thin film surfaceA positive electrode 7, a negative electrode 8 on the back of the Si substrate for applying an electric field on the ITO material.
The method for adjusting the response wavelength of the GaSb nanowire detector provided by the embodiment is implemented as follows:
the method comprises the following steps: preparing GaSb nanowires, namely epitaxially growing the GaSb nanowires on a Si substrate in a Ga metal liquid drop autocatalysis mode by adopting a Molecular Beam Epitaxy (MBE) technology, wherein the preparation process of the GaSb nanowires comprises the steps of firstly depositing Ga liquid drops for 26s at the deposition temperature of 620 ℃, and then pausing for 80 s; the growth temperature of the GaSb nanowire is 580 ℃, the temperature of a Ga source furnace is 980 ℃, the temperature of a Sb source furnace is 900 ℃, the As/Ga beam current ratio is 6, and the growth time is 20min to obtain the GaSb nanowire;
step two: stripping the GaSb nanowires from the Si substrate, placing the Si substrate with the epitaxially grown GaSb nanowires in a beaker filled with absolute ethyl alcohol for 20 minutes by ultrasonic treatment, so that the GaSb nanowires are stripped from the Si substrate, dispersing the single GaSb nanowires in the absolute ethyl alcohol, sucking the absolute ethyl alcohol solution containing the GaSb nanowires in the beaker by a dropper, dripping the absolute ethyl alcohol solution on the surface of the cleaned Si substrate, and waiting for natural air drying;
step three: preparing an ITO (indium tin oxide) graphic structure around a single GaSb nanowire by adopting an electron beam lithography technology, and depositing SiO on other parts except the ITO graphic structure by utilizing a PECVD (plasma enhanced chemical vapor deposition) technology2Preparing metal electrodes on the upper end and the lower end of the ITO and the two ends of the single nanowire by utilizing a magnetron sputtering technology, preparing Cr/Au electrodes on the two ends of the single GaSb nanowire, preparing Au electrodes on the two ends of the ITO graph structure, and constructing a GaSb nanowire detector prototype device with the electric field for adjusting the surface plasma enhanced frequency;
step four: and applying voltage to two ends of the single GaSb nanowire, and applying electric fields with different sizes to two ends of the ITO simultaneously to obtain the continuous adjustability of the response wavelength of the GaSb single nanowire detector for the frequency enhancement of the electric field adjustment surface plasmas.
The method for adjusting the response wavelength of the GaSb nanowire detector, which is claimed by the application, is realized by applying a constant electric field between the upper surface and the lower surface of an ITO (indium tin oxide) graphic film and adjusting the electric field on the ITO material to change the surface plasma resonance frequency of the ITO material, so that the dynamic adjustment of the response wavelength of a GaSb nanowire detector device is realized, and the problems that the response wavelength of the GaSb nanowire detector in the prior art cannot be dynamically adjusted in real time and the adjustment technology is complex are solved.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (3)
1. A method of tuning the response wavelength of a GaSb nanowire detector, the GaSb nanowire detector comprising: a single GaSb nanowire, Cr/Au electrodes at two ends of the GaSb nanowire, a Si substrate, and a natural oxide layer SiO on the surface of the Si substrate2Layer, PECVD deposited SiO outside the ITO film2The method is characterized in that an ITO regular periodic pattern structure is prepared on two sides of a single GaSb nanowire by adopting an electron beam lithography technology, the surface plasma resonance frequency of the ITO material is changed by applying electric fields on two sides of the ITO material, the adjustment of the surface plasma resonance frequency of the ITO material is realized by adjusting the electric fields at two ends of the ITO, and further the characteristic response wavelength of the GaSb nanowire detector is changed, so that the continuous adjustment of the response wavelength of the GaSb nanowire detector is realized.
2. The method for adjusting the response wavelength of the GaSb nanowire detector according to claim 1, wherein the method for adjusting the response wavelength of the GaSb nanowire detector is implemented by the following steps:
the method comprises the following steps: growing GaSb nanowires on a Si substrate by using Ga metal liquid drops through autocatalysis by adopting Molecular Beam Epitaxy (MBE);
step two: stripping the GaSb nanowire from the Si substrate, and preparing a single nanowire detection device by adopting an electron beam lithography technology;
step three: preparing an ITO (indium tin oxide) graph structure around the nanowire by adopting an electron beam lithography technology, preparing electrodes at the upper end and the lower end of the ITO, and constructing a GaSb nanowire detector prototype device with the electric field for adjusting the surface plasma enhanced frequency;
step four: and applying electric fields with different sizes to two ends of the ITO to obtain the continuous adjustability of the response wavelength of the GaSb single nanowire detector for the surface plasma frequency enhancement through electric field adjustment.
3. The method for adjusting the response wavelength of the GaSb nanowire detector as claimed in claim 1, wherein ITO materials for adjusting the surface plasmon resonance frequency are prepared on two sides of a single GaSb nanowire by adopting an electron beam lithography technology, an Au positive electrode is prepared on the front surface of the ITO materials, a Ni/Au electrode is prepared on the back surface of a Si substrate on the back surface of the ITO materials, and the positive electrode and the negative electrode are used for applying an adjustable electric field to the ITO materials.
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| CN110061090A (en) * | 2019-04-30 | 2019-07-26 | 福建农林大学 | Photodetector and preparation method thereof based on single antimony selenide nano wire PN junction |
| CN110164997B (en) * | 2019-06-05 | 2020-09-29 | 山东大学 | High-performance infrared detector based on high-hole-mobility GaSb nanowire and preparation method thereof |
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| CN105632935A (en) * | 2015-12-31 | 2016-06-01 | 青岛大学 | Method for regulating and controlling threshold voltage of semiconductor nanowire field effect transistor |
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| CN103367588A (en) * | 2013-07-11 | 2013-10-23 | 中国科学院半导体研究所 | Method for developing quantum dot on side wall of GaAs nanowire by utilizing nanoring as mask |
| CN105632935A (en) * | 2015-12-31 | 2016-06-01 | 青岛大学 | Method for regulating and controlling threshold voltage of semiconductor nanowire field effect transistor |
| CN108122999A (en) * | 2016-11-29 | 2018-06-05 | 中国科学院金属研究所 | UV photodetector and its manufacturing method based on the nano-particle modified GaN nano wires of Pt |
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