CN109581768A - 显示装置 - Google Patents

显示装置 Download PDF

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CN109581768A
CN109581768A CN201811495328.XA CN201811495328A CN109581768A CN 109581768 A CN109581768 A CN 109581768A CN 201811495328 A CN201811495328 A CN 201811495328A CN 109581768 A CN109581768 A CN 109581768A
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area
fan
display device
cabling
insulating layer
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卢延涛
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to CN201811495328.XA priority Critical patent/CN109581768A/zh
Priority to US16/467,996 priority patent/US11081504B2/en
Priority to PCT/CN2019/072885 priority patent/WO2020113802A1/zh
Publication of CN109581768A publication Critical patent/CN109581768A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Abstract

本发明提供一种显示装置，包括：显示区；非显示区，围绕所述显示区；若干信号线，分布于所述显示区，若干驱动芯片，对应分布于所述非显示区，每一驱动芯片设有至少一信号输出端；至少一扇出线，所述扇出线一端对应连接至所述驱动芯片的一信号输出端，其另一端对应连接至所述信号线；所述扇出线全部或部分地设置于所述驱动芯片的上方。本发明可以有效解决了面板左右边框的信赖性降低以及防静电能力弱等问题并且可以使左右边框更窄。

Description

显示装置
技术领域
本发明涉及液晶显示技术领域，尤其涉及一种显示装置。
背景技术
目前，很多触控屏需要设置扇出区将显示区的数据信号引出，由于扇出区相对显示区的区域较小，而需要引出的扇出区输出端信号线数量较多，在将显示区的数据信号线引出时，这对于扇出区布线工艺有很大的要求。
如图1至5所示，目前带触控功能的主流显示屏多采用异形设计来提高显示屏占整个面板的比率，由于拐角处、由于需要阶梯状摆级传电路，导致左右边框的级传电路输出信号端到显示区的栅极线(Gate Line)之间需要留出一部分空间用来将金属走线连接到栅极线，此部分金属走线为扇出走线(Gate Fanout)，扇出走线通常会占用面板左右边框一部分空间，导致左右边框的电路向切割线靠近，影响到显示装置信赖性及防静电能力等特性。
发明内容
为了解决上述技术问题，本发明提供一种显示装置，可以有效解决了面板左右边框的信赖性降低以及防静电能力弱等问题并且可以使左右边框更窄。
解决上述问题的技术方案是，提供一种显示装置，包括：显示面板，包括显示区和非显示区，所述非显示区围绕所述显示区；若干信号线，分布于所述显示区，若干驱动芯片，对应分布于所述非显示区，每一驱动芯片设有至少一信号输出端；至少一扇出线，所述扇出线一端对应连接至所述驱动芯片的一信号输出端，其另一端对应连接至所述信号线；所述扇出线全部或部分地设置于所述驱动芯片的上方。
在本发明一实施例中，所述非显示区包括芯片区以及连接在所述芯片区和所述显示区之间的弯折区；所述驱动芯片分布于所述芯片区中；所述信号线延伸至所述弯折区，所述扇出线的一端对应连接至所述弯折区的所述信号线。
在本发明一实施例中，所述芯片区的正上方具有所述扇出线的走线区，所述信号输出端设于所述芯片区朝向所述走线区的一面。
在本发明一实施例中，在所述驱动芯片上，所述信号输出端设于远离所述弯折区的一侧。
在本发明一实施例中，在所述走线区，所述扇出线呈“Z”字形来回排列。
在本发明一实施例中，所述显示装置还包括玻璃基板；第一绝缘层，覆于所述玻璃基板上；第二绝缘层，覆于所述第一绝缘层上；有源层，设于所述第二绝缘层上且对应于所述显示区，所述有源层具有源极区和漏极区；栅极绝缘层，覆于所述有源层和所述第二绝缘层上；栅极走线，设于所述栅极绝缘层上；第三绝缘层，覆于所述栅极走线和所述栅极绝缘层上；源漏极走线，设于所述第三绝缘层上，其中在所述显示区，所述源漏极走线对应连接至所述源极区和所述漏极区；所述信号线为所述源漏极走线；所述扇出线对应连接至对应所述弯折区的所述源漏极走线。
在本发明一实施例中，所述显示装置还包括有机层，覆于所述第三绝缘层上；连接孔，对应于所述弯折区，且从所述有机层贯穿至所述源漏极走线的表面；金属走线，设于所述有机层上，在所述弯折区，所述金属走线对应通过所述连接孔连接至所述源漏极走线；所述扇出线为对应所述弯折区的所述金属走线。
在本发明一实施例中，所述芯片区具有至少一拐角区以及直条形区，在所述拐角区，所述驱动芯片阶梯状分布于所述芯片区中；在所述直条形区，所述驱动芯片沿所述直条形区的直线方向层级排列。
在本发明一实施例中，所述非显示区的边缘具有切割线，在所述芯片区，所述驱动芯片位于远离所述切割线的一侧。
本发明的有益效果是：本发明提出一种显示装置，本发明通过采用在有机层上设置扇出走线，将扇出走线完全或一部分走在芯片区上方，从而省略了目前多数产品所使用的新片区到显示区扫描线所需要的空间，从而使芯片区远离了切割线，提高了左右窄边框的ESD(防静电)和RA(信赖性)特性，同时可以使左右边框更窄。
附图说明
下面结合附图和实施例对本发明作进一步的描述。
图1为现有技术显示装置结构示意图；
图2为现有技术11拐角处放大的驱动芯片布线结构示意图；
图3为现有技术12边框处放大的驱动芯片布线结构示意图；
图4为现有技术13拐角处放大的驱动芯片布线结构示意图
图5为现有技术显示装置扇出区布线的结构示意图；
图6为本发明显示装置结构示意图；
图7为本发明的显示装置扇出区布线的结构示意图；
图8为本发明显示装置纵向剖面结构示意图；
图9为本发明的显示装置扇出区“Z”布线的结构示意图；
图10为本发明显示装置拐角处41放大的驱动芯片结构示意图；
图11为本发明显示装置拐角处43放大的驱动芯片结构示意图；
图12为本发明显示装置边框区处42放大的驱动芯片结构示意图。
上述附图中附图标记为：
20显示装置；
210显示区； 29非显示区；
24芯片区、41拐角区； 212走线区； 213弯折区；
25切割线； 26扇出线； 27驱动芯片；
28信号线； 211信号输出端
31玻璃基板； 32第一绝缘层； 33第二绝缘层；
34栅极绝缘层； 35第三绝缘层； 36有机层；
37连接孔； 38第四绝缘层； 39有机遮光层；
310有源层； 311栅极走线； 312源漏极走线；
313金属走线；
具体实施方式
以下是各实施例的说明是参考附加的图式，用以例示本发明可以用实施的特定实施例。本发明所提到的方向用语，例如上、下、前、后、左、右、内、外、侧等，仅是参考附图式的方向。本发明提到的元件名称，例如第一、第二等，仅是区分不同的元部件，可以更好的表达。在图中，结构相似的单元以相同标号表示。
本文将参照附图来详细描述本发明的实施例。本发明可以表现为许多不同形式，本发明不应仅被解释为本文阐述的具体实施例。本发明提供这些实施例是为了解释本发明的实际应用，从而使本领域其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改方案。
如图6所示，在其一实施例中，本发明的显示装置包括显示面板、驱动芯片27以及扇出线26。
所述显示面板包括显示区210与非显示区29，所述非显示区29围绕所述显示区210。所述非显示区29包括芯片区24和弯折区213。所述弯折区213 连接在所述芯片区24和所述显示区210之间。
所述驱动芯片27对应分布于所述非显示区29中的所述芯片区24中。本实施例中，所述显示区29为方形，如长方形或正方形，其具有若干拐角(一般是4个拐角)，因此，所述芯片区24对应的具有至少一拐角区41以及直条形区42(也可称为边框区)，如图11和12所示，在所述拐角区，所述驱动芯片阶梯状分布于所述芯片区24中；在所述直条形区42，所述驱动芯片沿所述直条形区的直线方向层级排列。
如图7所示，所述显示装置还包括若干信号线28。所述信号线28分布于所述显示区210并延伸至所述弯折区213中，所述弯折区213中的所述信号线 28用来与所述驱动芯片27相连接。
为了实现减少扇出线26所需排布空间的效果，因此，本发明将所述扇出线 26从所述显示装置的弯折区213中引出，将引出部分或者全部的扇出线26设置在所述驱动芯片27的上方并与所述驱动芯片27连接。
本实施例中，所述扇出线26采用的是在所述显示装置的内部走线，如图8 所示，其中，所述显示装置包括玻璃基板31、遮光层39、第一绝缘层32、第二绝缘层33、有源层310、栅极绝缘层34、第三绝缘层35、栅极走线311、源漏极走线312、有机层36。其中，所述遮光层39设于所述玻璃基板31上，所述第一绝缘层32覆于所述遮光层39和所述玻璃基板31上；所述第二绝缘层33覆于所述第一绝缘层32上；所述有源层310设于所述第二绝缘层33上且对应于所述显示区210，并与所述遮光层39对应。所述有源层310具有源极区310a和漏极区310b；所述栅极绝缘层34覆于所述有源层310和所述第二绝缘层33上；所述栅极走线311设于所述栅极绝缘层34上；所述第三绝缘层35覆于所述栅极走线311和所述栅极绝缘层34上；所述源漏极走线312 设于所述第三绝缘层35上；其中在所述显示区210，所述源漏极走线312对应连接至所述源极区310a和所述漏极区310b。本实施例中，利用所述源漏极走线312作为与所述扇出线26连接的信号线28。具体实施时，将所述有机层 36覆于所述第三绝缘层35上后，再开设对应的连接孔37，所述连接孔37对应于所述弯折区213，且从所述有机层36贯穿至所述源漏极走线312的表面。之后在所述有机层36上沉积一金属走线313，在所述弯折区213中，所述金属走线313对应地通过所述连接孔37并连接至所述源漏极走线312；之后所述第四绝缘层38覆于所述有机层36和所述金属走线313的上表面。本实施例中，所述扇出线即为显示装置内部的金属走线313及其延伸至驱动芯片上方的走线。
本实施例中，将所述扇出线26设置为对应所述弯折区213的所述金属走线 313。通过将扇出线26全部或部分地设置于所述弯折区213内。在所述边框区 42、以及拐角41和43处使用本发明的扇出区排线布局，可以有效地减少驱动芯片到切割线的距离；这样可以减小所述扇出线26的空间，提高显示装置的信赖性(RA)及防静电(ESD)特性能力。
在本实施例的所述显示装置中，与所述弯折区213的扇出线26连接的所述信号线28之间相互平行。所述信号线28为显示装置中弯折区213的源极走线 312a或者漏级走线312b。本发明是通过将源漏极走线312电性连接栅极走线 311作为显示区210的信号线，另外在其他实施例当中，可以用单独的源漏极走线312作为所述显示区210的信号线28，也可以单独的用栅极走线311作为所述显示区210的信号线28，这并不影响本发明的创新点。而在所述显示区的源漏极走线用于驱动显示区的显示作用。
所述显示装置弯折区210的源极走线互相平行设置，即为本发明所述显示区210的信号线28，信号线28包括多条数据线、多条扫描线，所述数据线相互平行设置，所述扫描线垂直于所述数据线并且平行设置，所述数据线与扫描线交错形成网状结构。驱动芯片27通过金属走线313连接弯折区213的源漏极走线312，所述显示区数据线连接弯折区的漏级走线312b，所述显示区的扫描线连接弯折区的栅极走线311，而所述显示区的源极312a连接像素电极，主要用于对显示屏驱动液晶显像作用，使显示区可以正常的呈像。
所述非显示区210包括芯片区24以及连接在所述芯片24区和所述显示区 210之间的弯折区213；所述驱动芯片27分布于所述芯片区24中；信号线28 延伸至所述弯折区213，所述扇出线26的一端对应连接至所述弯折区213的所述信号线28。这样可以使驱动芯片27的信号传送至显示区210，可以使显示区210正常工作显示。
如图9所示，所述驱动芯片27设有至少一信号输出端211；用于连接所述的扇出线26，将所述驱动芯片27的信号通过所述扇出线26传递至所述显示区210的所述信号线28。所述扇出线26一端对应连接至所述驱动芯片27的一信号输出端，其另一端对应连接至所述信号线28；所述扇出线26全部或部分地设置于所述驱动芯片27的上方。这样可以减少扇出线的空间，可以使驱动芯片27远离切割线25，进一步提高显示装置的信赖性(RA)及防静电(ESD) 特性能力，以及降低了实际制程的难度。
所述芯片区24的正上方具有所述扇出线26的走线区212，所述信号输出端211设于所述芯片区24朝向所述走线区212的一面。在所述驱动芯片27 上，所述信号输出端211设于远离所述弯折区213的一侧。在所述走线区212，所述扇出线26呈“Z”字形来回排列。所述扇出线26“Z”字形排列，增加了扇出线的长度，这样有利于增加扇出线26的阻抗。
如图10、11所示，所述非显示区的边缘具有切割线，在所述芯片区，所述驱动芯片位于远离所述切割线的一侧。由于现很多屏幕都制作成不规则的屏幕，并带有特有的形状结构，一般都会带有多个拐角，其中，拐角41和42 使用本发明的扇出区排线布局，驱动芯片27阶梯分布在拐角41处，使扇出线 26部分或者全部设在驱动芯片27上，可以有效地减少边框距离；使驱动芯片 27远离切割线25，也可以提高显示装置的RA及ESD特性能力。
如图12所示，边框区42使用本发明的扇出区排线布局，驱动芯片27线性分布在拐角41处，使扇出线26部分或者全部设在驱动芯片27上，可以有效地减少边框距离；使驱动芯片27远离切割线25，也可以增加提高显示装置的 RA及ESD特性能力。
本发明的显示装置当然还可以包括如封装框等其他结构，由于本案的主要设计要点在所述扇出线的空间排布情况，即本实施例中的所述显示装置通过将扇出线26全部或部分地设置于所述驱动芯片27的上方。在所述边框区 42、以及拐角41和43处使用本发明的扇出区排线布局，可以有效地减少边框距离；这样可以减小扇出线的空间，可以使驱动芯片27远离切割线25，提高显示装置的RA及ESD特性能力。
应当指出，对于经充分说明的本发明来说，还可具有多种变换及改型的实施方案，并不局限于上述实施方式的具体实施例。上述实施例仅仅作为本发明的说明，而不是对发明的限制。总之，本发明的保护范围应包括那些对于本领域普通技术人员来说显而易见的变换或替代以及改型。

Claims (10)

1.一种显示装置，其特征在于，包括：
显示面板，包括显示区和非显示区，所述非显示区围绕所述显示区；
若干信号线，分布于所述显示区，
若干驱动芯片，对应分布于所述非显示区，每一驱动芯片设有至少一信号输出端；
至少一扇出线，所述扇出线一端对应连接至所述驱动芯片的一信号输出端，其另一端对应连接至所述信号线；所述扇出线全部或部分地设置于所述驱动芯片的上方。
2.根据权利要求1所述的显示装置，其特征在于，所述非显示区包括芯片区以及弯折区，所述弯折区连接在所述芯片区和所述显示区之间；
所述驱动芯片分布于所述芯片区中；所述信号线延伸至所述弯折区，所述扇出线的一端对应连接至所述弯折区中的所述信号线。
3.根据权利要求2所述的显示装置，其特征在于，所述芯片区的正上方具有所述扇出线的走线区，所述信号输出端设于所述芯片区朝向所述走线区的一面。
4.根据权利要求3所述的显示装置，其特征在于，在所述驱动芯片上，所述信号输出端设于远离所述弯折区的一侧。
5.根据权利要求3所述的显示装置，其特征在于，在所述走线区，所述扇出线呈“Z”字形来回排列。
6.根据权利要求2所述的显示装置，其特征在于，还包括
玻璃基板；
第一绝缘层，覆于所述玻璃基板上；
第二绝缘层，覆于所述第一绝缘层上；
有源层，设于所述第二绝缘层上且对应于所述显示区，所述有源层具有源极区和漏极区；
栅极绝缘层，覆于所述有源层和所述第二绝缘层上；
栅极走线，设于所述栅极绝缘层上；
第三绝缘层，覆于所述栅极走线和所述栅极绝缘层上；
源漏极走线，设于所述第三绝缘层上，其中在所述显示区，所述源漏极走线对应连接至所述源极区和所述漏极区；
所述信号线为所述源漏极走线；所述扇出线对应连接至对应所述弯折区的所述源漏极走线。
7.根据权利要求2所述的显示装置，其特征在于，还包括
有机层，覆于所述第三绝缘层上；
连接孔，对应于所述弯折区，且从所述有机层贯穿至所述源漏极走线的表面；
金属走线，设于所述有机层上，在所述弯折区，所述金属走线对应通过所述连接孔连接至所述源漏极走线；
所述扇出线为对应所述弯折区的所述金属走线。
8.根据权利要求2所述的显示装置，其特征在于，所述芯片区具有至少一拐角区以及直条形区，在所述拐角区，所述驱动芯片阶梯状分布于所述芯片区中；在所述直条形区，所述驱动芯片沿所述直条形区的直线方向层级排列。
9.根据权利要求8所述的显示装置，其特征在于，与所述扇出线连接的所述信号线之间相互平行。
10.根据权利要求2所述的显示装置，其特征在于，所述非显示区的边缘具有切割线，在所述芯片区，所述驱动芯片位于远离所述切割线的一侧。
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