CN109576775A - The thermal field structure and single crystal growing furnace of single crystal growing furnace - Google Patents
The thermal field structure and single crystal growing furnace of single crystal growing furnace Download PDFInfo
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- CN109576775A CN109576775A CN201811609485.9A CN201811609485A CN109576775A CN 109576775 A CN109576775 A CN 109576775A CN 201811609485 A CN201811609485 A CN 201811609485A CN 109576775 A CN109576775 A CN 109576775A
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- single crystal
- crystal growing
- crucible
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- 239000013078 crystal Substances 0.000 title claims abstract description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 192
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 182
- 239000010439 graphite Substances 0.000 claims abstract description 182
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 claims abstract description 148
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims abstract description 148
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- 238000000576 coating method Methods 0.000 claims description 75
- 239000011248 coating agent Substances 0.000 claims description 68
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 48
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 48
- 239000004575 stone Substances 0.000 claims description 6
- 229910052571 earthenware Inorganic materials 0.000 claims description 5
- 230000003628 erosive effect Effects 0.000 abstract description 21
- 239000002131 composite material Substances 0.000 abstract description 8
- 239000002023 wood Substances 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 230000001681 protective effect Effects 0.000 abstract description 2
- 238000009825 accumulation Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000007770 graphite material Substances 0.000 description 8
- 238000005299 abrasion Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000003116 impacting effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses the thermal field structure of single crystal growing furnace and single crystal growing furnaces, wherein the thermal field structure of single crystal growing furnace includes: graphite tray；Carbon carbon crucible, the carbon carbon crucible are arranged on the graphite tray；Guard block, the guard block are arranged on the carbon carbon crucible bottom surface and/or surface, and are suitable for anti-blocking carbon crucible and are corroded by SiOx.Thus; by the way that guard block 300 is arranged on 200 bottom surface of carbon carbon crucible and/or surface; the bottom surface of carbon carbon crucible 200 can not only be protected; reduce the exposed erosion damage in outer carbon carbon composite wood by SiOx in carbon carbon crucible 200; extend the service life of carbon carbon crucible; replacement number is reduced, may also reach up the effect in gap between filled graphite tray 100 and carbon carbon crucible 200, and then to the protective effect that graphite tray 100 also functions to.
Description
Technical field
The invention belongs to monocrystalline silicon fields, specifically, the invention belongs to the thermal field structure of single crystal growing furnace and single crystal growing furnaces.
Background technique
As long crystal furnace is using secondary or multiple charging, single furnace growth time is lengthened, and graphite material is anti-with gasification Si for a long time
It answers, a part generates SiOx, and another part forms SiC, but most of gasification Si is formed then as vacuum system is discharged
The part SiOx, SiOx+C → SiO+CO2, SiOx can corrode graphite material part.In addition, the SiC that another part is formed can be deposited
Get off, cause graphite material abnormal stacking face, since graphite is different from the thermal expansion coefficient of SiC, influences the tight of normal part
Close combination.With gap variation aggravation is influenced, may cause part can not be assembled, and more influence periphery into one and match zero group
Part.
Summary of the invention
The present invention is directed to solve at least some of the technical problems in related technologies.For this purpose, of the invention
One purpose is to propose that one kind can be effectively reduced carbon carbon crucible by SiOxThe thermal field structure and single crystal growing furnace of the single crystal growing furnace of erosion.
According to an aspect of the present invention, the invention proposes a kind of thermal field structure of single crystal growing furnace, realities according to the present invention
Apply example, comprising:
Graphite tray；
Carbon carbon crucible, the carbon carbon crucible are arranged on the graphite tray；
Guard block, the guard block are arranged on the carbon carbon crucible bottom surface and/or surface, and are suitable for anti-
Blocking carbon crucible is corroded by SiOx.
It, not only can be to carbon carbon earthenware as a result, by the way that guard block is arranged on carbon carbon crucible bottom surface and/or a side
The bottom surface of crucible is protected, and the exposed erosion damage in outer carbon carbon composite wood by SiOx in carbon carbon crucible is reduced, and extends carbon
The service life of carbon crucible reduces replacement number.Protection portion is set on carbon carbon crucible bottom surface and/or surface simultaneously
Part may also reach up the effect in gap between filled graphite tray and carbon carbon crucible, and then to the protection that graphite tray also functions to
Effect.
In addition, the thermal field structure of single crystal growing furnace according to the above embodiment of the present invention can also have following additional technology special
Sign:
In some embodiments of the invention, the guard block includes: in graphite tray step, graphite paper and coating
It is at least one.
In some embodiments of the invention, the graphite tray step setting is prolonged on the graphite tray, and upwards
Stretch the bottom end for wrapping up the carbon carbon crucible.
In some embodiments of the invention, the outer surface of the graphite tray step is formed as inclined-plane.
In some embodiments of the invention, the height of the graphite stair-step is 1-20mm, and width is 1~10mm
In some embodiments of the invention, the graphite paper is covered on the bottom surface of the carbon carbon crucible and extends to institute
State the side of carbon carbon crucible, bottom surface 100~400mm of the outer of the graphite paper apart from the carbon carbon crucible.
In some embodiments of the invention, the graphite paper with a thickness of 0.1mm-10mm.
In some embodiments of the invention, the gray scale of the graphite paper is 1-100ppm.
In some embodiments of the invention, the coating is formed in the bottom surface of the carbon carbon crucible and extends to described
The side of carbon carbon crucible, bottom surface 1-30mm of the outer of the coating apart from the carbon carbon crucible.
In some embodiments of the invention, the coating includes two layers, wherein coating described in first layer is formed in described
The bottom surface of carbon carbon crucible and the side for extending to the carbon carbon crucible, the outer of coating described in first layer is apart from the carbon carbon earthenware
The bottom surface 1-30mm of crucible；Coating described in the second layer is formed in the upper surface of the graphite tray and extends to the graphite tray
Side, upper surface 1-10mm of the outer of coating described in the second layer apart from the graphite tray.
In some embodiments of the invention, the coating with a thickness of 1-200um.
In some embodiments of the invention, the coating is coat of silicon carbide or graphite ene coatings.
In some embodiments of the invention, the guard block includes: the graphite paper and the coating, the graphite
Paper is arranged on the outer surface of the coating.
In some embodiments of the invention, the guard block includes: the graphite tray step and the coating, institute
Graphite tray step is stated to be wrapped on the outer surface of the coating.
In some embodiments of the invention, the guard block includes: the graphite tray step and the graphite paper,
The graphite tray step is wrapped on the outer surface of the graphite paper.
In some embodiments of the invention, the guard block includes: graphite tray step, graphite paper and coating, institute
It states graphite paper to be arranged on the outer surface of the coating, the graphite tray step is wrapped on the outer surface of the graphite paper.
According to another aspect of the present invention, the invention also provides a kind of single crystal growing furnaces, according to an embodiment of the invention, should
Single crystal growing furnace has the thermal field structure of single crystal growing furnace described in preceding embodiment.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the thermal field structure of single crystal growing furnace according to an embodiment of the invention.
Fig. 2 is the structural schematic diagram of the thermal field structure of single crystal growing furnace in accordance with another embodiment of the present invention.
Fig. 3 is the structural schematic diagram of the thermal field structure of the single crystal growing furnace of further embodiment according to the present invention.
Fig. 4 is the structural schematic diagram of the thermal field structure of the single crystal growing furnace of further embodiment according to the present invention.
Fig. 5 is the structural schematic diagram of the thermal field structure of the single crystal growing furnace of further embodiment according to the present invention.
Fig. 6 is the structural schematic diagram of the thermal field structure of the single crystal growing furnace of further embodiment according to the present invention.
Fig. 7 is the structural schematic diagram of the thermal field structure of the single crystal growing furnace of further embodiment according to the present invention.
Fig. 8 is the structural schematic diagram of the thermal field structure of the single crystal growing furnace of further embodiment according to the present invention.
Fig. 9 is the structural schematic diagram of the thermal field structure of the single crystal growing furnace of further embodiment according to the present invention.
Figure 10 is the structural schematic diagram of the thermal field structure of the single crystal growing furnace of further embodiment according to the present invention.
Specific embodiment
The embodiment of the present invention is described below in detail, the example of embodiment is shown in the accompanying drawings, wherein identical from beginning to end
Or similar label indicates same or similar component or component with the same or similar functions.It is retouched below with reference to attached drawing
The embodiment stated is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
According to an aspect of the present invention, the invention proposes a kind of thermal field structures of single crystal growing furnace, as shown in Figure 1, according to
The embodiment of the present invention, comprising: graphite tray 100；Carbon carbon crucible 200, carbon carbon crucible 200 are arranged on graphite tray 100；It protects
Component 300 is protected, guard block 300 is arranged on 200 bottom surface of carbon carbon crucible and/or surface, and is suitable for anti-blocking carbon earthenware
Crucible 200 is by SiOxIt corrodes.
As a result, by the way that guard block 300 is arranged on 200 bottom surface of carbon carbon crucible and/or surface, thus not only may be used
Protected with the bottom surface to carbon carbon crucible 200, reduce carbon carbon crucible 200 on it is exposed in outer carbon carbon composite wood by SiOx's
Erosion damage extends the service life of carbon carbon crucible, reduces replacement number.Simultaneously in 200 bottom surface of carbon carbon crucible and/or part
Guard block 300 is set on side, may also reach up the effect in gap between filled graphite tray 100 and carbon carbon crucible 200, into
And to the protective effect that graphite tray 100 also functions to.
According to a particular embodiment of the invention, guard block 300 may include: graphite tray step 310, graphite paper 320
At least one of with coating 330.
According to a particular embodiment of the invention, as shown in Fig. 2, guard block 300 can be graphite tray step 310.Tool
Body, graphite tray step 310 is arranged on graphite tray 100, and upwardly extends the bottom end of package carbon carbon crucible 200.As a result,
The graphite tray step 310 can the bottom end effectively to carbon carbon crucible 200 protect, while also to graphite tray 100 with
Gap is sealed between carbon carbon crucible 200, it is possible thereby to effectively achieve reduction or avoid carbon carbon crucible 20 by SiOx's
The purpose of erosion damage.Its gap is sealed simultaneously and also avoids the SiC heap that carbon carbon crucible 200 is corroded generation by SiOx
Product influences closely combining for normal part in gap.
According to a particular embodiment of the invention, as shown in Fig. 2, the outer surface of graphite tray step 310 be formed as downwards to
Outer inclined-plane 311.It downwardly and outwardly can be understood as on the basis of the inside center of carbon carbon crucible herein.It is somebody's turn to do as a result, by being formed
Inclined-plane 311 can reduce the accumulation of SiC, specifically avoid the accumulation of SiC toward graphite tray internal layer.And then effectively to graphite tray
And other component is protected in thermal field structure, is avoided SiC and is blocked the abrasion caused between components.
According to a particular embodiment of the invention, the gradient on the inclined-plane 311 formed on graphite tray step 310 can be 30-
60 degree, preferably 45 degree.The diameter of usual graphite tray and the diameter of carbon carbon crucible are fixed.Therefore, if graphite tray platform
The gradient of rank 310 is too small, then graphite tray height will be too short, too low to the height of the side wall package of carbon carbon crucible, Jin Erwu
Method achievees the purpose that protection to the bottom end of carbon carbon crucible 200 and reduces SiC accumulation.And if the gradient of graphite tray step 310
Excessive, then 310 thickness of graphite tray step will be thinning, and adhesive force in carbon carbon crucible reduces, and then is easy to collapse damage and.
According to a particular embodiment of the invention, the height of graphite stair-step 310 can be 1-20mm, and width can be
1-10mm.It is possible thereby to make the gradient on the inclined-plane 311 formed on graphite tray step 310 within the scope of 30-60 degree, preferably 45
Degree.Graphite stair-step 310 with above-mentioned size can the bottom end more preferably to carbon carbon crucible 200 protect, reduce SiC heap
Product, while sealing gap between graphite tray 100 and carbon carbon crucible 200, reduce or avoid carbon carbon crucible 20 by
The purpose of the erosion damage of SiOx.
According to a particular embodiment of the invention, as shown in figure 3, guard block 300 can be graphite paper 320.Specifically, stone
Black paper 320 is covered on the bottom surface of carbon carbon crucible 200 and extends to the side of carbon carbon crucible 200.
Carbon carbon crucible 200 is protected using graphite paper 320 as a result, it is possible to prevente effectively from exposed in carbon carbon crucible 200
In erosion damage of the outer carbon carbon composite wood by SiOx, and then the service life of carbon carbon crucible can be extended one times, effectively subtracted
Number is replaced less.And graphite paper 320 can also effectively obstruct 200 internal gas direction of the traffic of carbon carbon crucible, and reducing SiC deposition can
Energy property, and then 200 service life of graphite tray 100 and carbon carbon crucible can be extended simultaneously, it can specifically extend one times of use
Service life.In addition, in process of production, SiOx can enter small seam since carbon carbon crucible and graphite tray can generate micro gap
Clearance flow is dynamic and reacts with the generation of graphite material, generates SiC, corrodes graphite material, the assembling of carbon carbon crucible and graphite material is influenced, if carbon
The gap of carbon crucible and graphite material is excessive, then can directly reduce service life, or needs directly to replace.Use graphite paper in
Between medium be filled in the gap between graphite tray 100 and carbon carbon crucible 200 using 320 flexible nature of graphite paper, can be with
It allows carbon carbon crucible to combine closely with graphite tray, reduces material combination processing precise degree defect.
According to a particular embodiment of the invention, bottom surface 100- of the outer of graphite paper 320 apart from carbon carbon crucible 200
400mm.In particular 50mm, 150mm, 250mm, 260mm, 270mm, 280mm, 310mm, 320mm, 330mm, 340mm,
350mm, 360mm, 370mm, 380mm, 390mm.Preferably, bottom surface of the outer of graphite paper 320 apart from carbon carbon crucible 200
200mm or 300mm.Thus while carrying out effective protection to carbon carbon crucible 200, not to the thermal field in carbon carbon crucible 200
It impacts.
According to a particular embodiment of the invention, the outer of graphite paper 320 refers to that graphite paper 320 is outermost with respect to center
Side." outer " used in the present invention refers both to certain component with respect to the outermost side in center.
According to a particular embodiment of the invention, graphite paper with a thickness of 0.1mm-10mm.Inventors have found that if graphite paper mistake
It is thick, it may appear that graphite paper 320 is combined insecure with carbon carbon crucible 200, sliding phenomenon occurs, and if graphite paper is excessively thin, protect
Effect is poor, and too thin graphite paper is also easy to volatilization, embrittlement, and then is unable to reach the effect of protection substantially.
According to a particular embodiment of the invention, it is preferable that graphite paper with a thickness of 0.4mm-0.5mm.Thus the thickness
Graphite paper can be combined with carbon carbon crucible 200 securely, and will not volatilize and embrittlement, can also effectively obstruct carbon carbon crucible 200
Internal gas flow direction reduces SiC and deposits possibility, and then reaches persistently protection carbon carbon crucible 200, effectively extends carbon carbon crucible
200 service life.
According to a particular embodiment of the invention, the gray scale of graphite paper is 1-100ppm.Preferably, the gray scale of graphite paper is
1-30ppm, 30-50ppm, 50-100ppm are specifically 10ppm, 20ppm, 40ppm, 60ppm, 70ppm, 80ppm,
90ppm。
According to a particular embodiment of the invention, as shown in figure 4, guard block 300 can be coating 330.Specifically, coating
330 are formed in the bottom surface of carbon carbon crucible 200 and extend to the side of carbon carbon crucible 200.
Carbon carbon crucible 200 is protected using coating 330 as a result, it is possible to prevente effectively from carbon carbon crucible 200 it is exposed
Erosion damage of the outer carbon carbon composite wood by SiOx, and then the service life of carbon carbon crucible can be extended one times, it effectively reduces
Replace number.In addition, being protected due to increasing coating 330 to carbon carbon crucible 200, reduces carbon carbon crucible 200 and produced by corrosion
Raw SiC, and then reduce SiC in the confusion accumulation of 100 bottom of graphite tray, it avoids impacting other components.More
Importantly, inventors have found that carbon carbon crucible crucible can be filled up in the one layer of fine and close coating 330 in carbon carbon crucible bottom and side painting
Coarse hole on surface, and then the gap between carbon carbon crucible and graphite tray can be reduced, SiOx is to carbon carbon in reduction production
The erosion of crucible.
According to a particular embodiment of the invention, bottom surface 1-30mm of the outer of coating apart from carbon carbon crucible, such as can be with
For 5mm, 10mm, 15mm, 20mm, 25mm, 30mm.Thus while carrying out effective protection to carbon carbon crucible 200, not to carbon
Thermal field in carbon crucible 200 impacts.Inventors have found that if the area of the package of coating 330 200 bottom end of carbon carbon crucible is excessive,
Unnecessary waste of material is then caused, and is easy to influence thermal field inside crucible；But package area is too small, is unable to reach and keeps away
From the purpose of the erosion damage to SiOx.
According to a particular embodiment of the invention, it is preferable that bottom surface 10-20mm of the outer of coating apart from carbon carbon crucible,
It such as can be 11mm, 12mm, 13mm, 14mm, 15mm, 16mm, 17mm, 18mm, 19mm.It is possible thereby to effectively avoid carbon carbon earthenware
The exposed erosion damage in outer carbon carbon composite wood by SiOx on crucible 200 extends the service life of carbon carbon crucible, reduces replacement time
Number.Furthermore it is also possible to effectively reduce the SiC that carbon carbon crucible 200 is generated by corrosion, and then reduce SiC in graphite tray 100
The chaotic accumulation of bottom, avoids impacting other components.
According to a particular embodiment of the invention, as shown in figure 5, coating 330 may include two layers, wherein first layer coating
331 are formed in the bottom surface of carbon carbon crucible 200 and extend to the side of carbon carbon crucible 200, and the outer of coating is apart from carbon carbon crucible
Bottom surface 1-30mm；Second layer coating 332 is formed in the upper surface of graphite tray 100 and extends to the side of graphite tray 100
Face, upper surface 1-10mm of the outer of coating apart from graphite tray.As a result, by the way that coating is respectively adopted to 200 He of carbon carbon crucible
Graphite tray 100 is protected, it is possible to prevente effectively from its erosion damage by SiOx, effectively extends carbon carbon crucible 200 and graphite
The service life of tray 100.It avoids also avoiding while the erosion by SiOx simultaneously and generates SiC, reduce SiC toward graphite tray
The accumulation of internal layer, and then effectively other component in graphite tray and thermal field structure is protected, it avoids SiC blocking and makes
At the abrasion between components.
According to a particular embodiment of the invention, coating with a thickness of 1-200um.Such as can for 20um, 40um, 60um,
80um,100um,120um,140um,160um,180um,200um.If the thickness of coating is excessively high, cost is too high, too Bao Zerong
It is easily rupturable, and too thin it is easy to appear non-uniform phenomenon.It is under high temperature environment according to carbon carbon crucible 200 and graphite tray 100
It uses.Therefore, it is formed on its surface with a thickness of 1-200um coating, can effectively reach protection carbon carbon crucible 200 and graphite tray
100 by the purpose of the erosion of SiOx, and then effectively extends the service life of carbon carbon crucible 200 and graphite tray 100.
According to a particular embodiment of the invention, it is preferable that coating with a thickness of 80um, such as can for 20um, 30um,
40um,50um,60um,70um,80um.Thus it under the premise of guaranteeing the effectively erosion of anti-SiOx, can drop as much as possible
Its low cost.In addition, the excessively thin phenomenon for being also easy to occur in uneven thickness of the thickness of coating, and too thin it is easily broken.
According to a particular embodiment of the invention, above-mentioned coating can be coat of silicon carbide or graphite ene coatings.Silicon carbide
Coating or graphite ene coatings can be prepared by existing preparation method.
Carbon carbon crucible 200 is protected using coat of silicon carbide or graphite ene coatings as a result, it can further effectively
The exposed erosion damage in outer carbon carbon composite wood by SiOx in carbon carbon crucible 200 is avoided, the service life of carbon carbon crucible is extended,
Reduce replacement number.In addition, carbon carbon crucible 200 is protected using coat of silicon carbide or graphite ene coatings, it can be into one
Step reduces the SiC that carbon carbon crucible 200 is generated by corrosion, and then reduces confusion of the SiC in 100 bottom of graphite tray and accumulate,
It avoids impacting other components.Importantly, inventors have found that applying one layer of densification in carbon carbon crucible bottom and side
Coat of silicon carbide or graphite ene coatings, can more efficiently fill up the coarse hole on carbon carbon crucible surface, and then can subtract
Gap between few carbon carbon crucible and graphite tray, reduces erosion of the SiOx to carbon carbon crucible in production.
According to one embodiment of present invention, as shown in fig. 6, guard block 300 includes: graphite paper 320 and coating 330,
Graphite paper 320 is arranged on the outer surface of coating 330.
According to a particular embodiment of the invention, the performance parameter of graphite paper 320 and coating 330 in preceding embodiment the same as being retouched
It states, details are not described herein.
According to one embodiment of present invention, as shown in fig. 7, protection portion 300 includes: graphite tray step 310 and coating
330, graphite tray step 310 is wrapped on the outer surface of coating 330.If 310 height of graphite tray step is higher than coating 330
Outer when, be bonded beyond part with the side of carbon carbon crucible 200.
Specific example according to the present invention, when protection portion 300 not only includes graphite tray step 310, but also including coating 330
When, the protection to carbon carbon crucible 200 and graphite tray 100 can be significantly improved.Firstly, passing through the bottom table in carbon carbon crucible 200
The side of face and bottom end forms coating 330, can obstruct graphite material and carbon carbon materials in production, graphite tray 100 and carbon carbon
The exposed surface of crucible 200 is corroded by SiOx generates SiC, and then reduces the SiC generated in the mixed of 100 bottom of graphite tray
Product is huddled, avoids impacting other components.And further increasing graphite tray step 310, it is possible to reduce the heap of SiC
Product, specifically avoids the accumulation of SiC toward graphite tray internal layer.And then effectively to other component in graphite tray and thermal field structure
It is protected, avoids SiC and block the abrasion caused between components.
According to a particular embodiment of the invention, when protection portion 300 includes while including graphite tray step 310 and coating
When 330, coating 330 may include two layers, wherein first layer coat of silicon carbide 331 is formed in the bottom table of carbon carbon crucible 200
Face and the side for extending to carbon carbon crucible 200, bottom surface 1-30 of the outer of first layer coat of silicon carbide apart from carbon carbon crucible
mm；Second layer coat of silicon carbide 332 is formed in the upper surface of graphite tray 100 and extends to the side of graphite tray 100, and second
Upper surface 1-10mm of the outer of layer coat of silicon carbide apart from graphite tray.And graphite tray step 310 is equally wrapped in coating
On 330 outer surface, if 310 height of graphite tray step be higher than first layer coat of silicon carbide 331 outer, beyond part with
The side of carbon carbon crucible 200 is bonded.
Carbon carbon crucible 200 and graphite tray 100 are protected by the way that coat of silicon carbide is respectively adopted as a result, and increased
When graphite tray step 310, not only it is possible to prevente effectively from it is effectively extended carbon carbon crucible 200 and stone by the erosion damage of SiOx
The service life of black tray 100.It avoids also avoiding while the erosion by SiOx simultaneously and generates SiC, reduce SiC and held toward graphite
The accumulation of disk internal layer, and then effectively other component in graphite tray and thermal field structure is protected, it is stifled to avoid SiC
Plug causes the abrasion between components.
According to a particular embodiment of the invention, when guard block 300 includes graphite tray step 310 and coating 330, two
The performance parameter of person is with described in preceding embodiment, and details are not described herein.In addition, when guard block 300 includes stone simultaneously
When black tray step 310 and coating 330, the overall thickness of the two is not easy blocked up, is otherwise easy to appear Heat Conduction Phenomenon, influences graphite and hold
The service life of disk.
According to one embodiment of present invention, as shown in figure 8, guard block 300 includes: graphite tray step 310 and stone
Black paper 320, graphite tray step 310 are wrapped on the outer surface of graphite paper 320.If 310 height of graphite tray step is higher than stone
When the outer of black paper 320, it is bonded beyond part with the side of carbon carbon crucible 200.
Specific example according to the present invention, when protection portion 300 not only includes graphite tray step 310, but also including graphite paper 320
When, the protection to carbon carbon crucible 200 and graphite tray 100 can be significantly improved.Firstly, passing through the bottom table in carbon carbon crucible 200
The side of face and bottom end formed graphite paper 320, it is possible to prevente effectively from carbon carbon crucible 200 it is exposed outer carbon carbon composite wood by
The erosion damage of SiOx extends the service life of carbon carbon crucible, reduces replacement number.Carbon carbon crucible can be also effectively obstructed simultaneously
200 internal gas direction of the traffic reduce SiC and deposit possibility, and then can extend graphite tray 100 and carbon carbon crucible simultaneously
200 service lifes.In addition, being filled in graphite tray 100 and carbon carbon crucible since graphite paper 320 has soft compactness
In gap between 200, carbon carbon crucible can be allowed to combine closely with graphite tray, reduce material combination processing precise degree defect.
And further increasing graphite tray step 310, it is possible to reduce the accumulation of SiC specifically avoids SiC toward graphite tray internal layer
Accumulation.And then effectively other component in graphite tray and thermal field structure is protected, it avoids SiC blocking and causes zero
Abrasion between component.
According to a particular embodiment of the invention, when guard block 300 includes graphite tray step 310 and graphite paper 320,
The performance parameter of the two is with described in preceding embodiment, and details are not described herein.
According to one embodiment of present invention, as shown in figs. 9-10, guard block 300 include: graphite tray step 310,
Graphite paper 320 and coating 330, graphite paper 320 are arranged on the outer surface of coating 330, and graphite tray step 310 is wrapped in graphite
On the outer surface of paper 320.
According to a particular embodiment of the invention, when guard block 300 includes graphite tray step 310, graphite paper 320 and is applied
When layer 330, the performance parameter of three is with described in preceding embodiment, and details are not described herein.
According to another aspect of the present invention, the invention also provides a kind of single crystal growing furnaces, according to an embodiment of the invention, should
Single crystal growing furnace has the thermal field structure of the single crystal growing furnace of preceding embodiment.
Since guard block 300 can effectively achieve protection graphite tray 100 and carbon carbon crucible 200 by SiOxIt corrodes
Effect, and then can effectively extend the service life of graphite tray 100 and carbon carbon crucible 200, reduce replacement number, reduce at
This.Reducing SiO simultaneouslyxWhile erosion, reduce the generation of SiC, and then avoids and accumulated largely at thermal field structure
SiC causes the abrasion between graphite tray 100 and carbon carbon crucible 200 and other components, and then can effectively improve thermal field
The stability of structure.Therefore, the performance of single crystal growing furnace, reduced cost obviously can be significantly improved with the thermal field structure.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be any
It can be combined in any suitable manner in a or multiple embodiment or examples.In addition, without conflicting with each other, the technology of this field
The feature of different embodiments or examples described in this specification and different embodiments or examples can be combined by personnel
And combination.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (17)
1. a kind of thermal field structure of single crystal growing furnace characterized by comprising
Graphite tray；
Carbon carbon crucible, the carbon carbon crucible are arranged on the graphite tray；
Guard block, the guard block are arranged on the carbon carbon crucible bottom surface and/or surface, and are suitable for anti-blocking
Carbon crucible is corroded by SiOx.
2. the thermal field structure of single crystal growing furnace according to claim 1, which is characterized in that the guard block includes: graphite tray
At least one of step, graphite paper and coating.
3. the thermal field structure of single crystal growing furnace according to claim 2, which is characterized in that the graphite tray step is arranged described
On graphite tray, and upwardly extend the bottom end for wrapping up the carbon carbon crucible.
4. the thermal field structure of single crystal growing furnace according to claim 3, which is characterized in that the outer surface shape of the graphite tray step
As inclined-plane downwardly and outwardly.
5. the thermal field structure of single crystal growing furnace according to claim 4, which is characterized in that the height of the graphite stair-step is 1-
20mm, width 1-10mm.
6. the thermal field structure of single crystal growing furnace according to claim 2, which is characterized in that the graphite paper is covered on the carbon carbon earthenware
The bottom surface of crucible and the side for extending to the carbon carbon crucible, bottom surface of the outer of the graphite paper apart from the carbon carbon crucible
100~400mm.
7. the thermal field structure of single crystal growing furnace according to claim 6, which is characterized in that the graphite paper with a thickness of 0.1mm-
10mm。
8. the thermal field structure of single crystal growing furnace according to claim 7, which is characterized in that the gray scale of the graphite paper is 1-
100ppm。
9. the thermal field structure of single crystal growing furnace according to claim 2, which is characterized in that the coating is formed in the carbon carbon crucible
Bottom surface and extend to the side of the carbon carbon crucible, bottom surface 1- of the outer of the coating apart from the carbon carbon crucible
30mm。
10. the thermal field structure of single crystal growing furnace according to claim 9, which is characterized in that the coating includes two layers, wherein the
One layer of coating is formed in the bottom surface of the carbon carbon crucible and extends to the side of the carbon carbon crucible, applies described in first layer
Bottom surface 1-30mm of the outer of layer apart from the carbon carbon crucible；Coating described in the second layer is formed in the upper table of the graphite tray
Face and the side for extending to the graphite tray, upper surface 1- of the outer of coating described in the second layer apart from the graphite tray
10mm。
11. according to the thermal field structure of the single crystal growing furnace of claim 9 or 10, which is characterized in that the coating with a thickness of 1-
200um。
12. the thermal field structure of single crystal growing furnace according to claim 11, which is characterized in that the coating is coat of silicon carbide or stone
Black ene coatings.
13. the thermal field structure of single crystal growing furnace according to claim 2, which is characterized in that the guard block includes: the graphite
Paper and the coating, the graphite paper are arranged on the outer surface of institute's coating.
14. the thermal field structure of single crystal growing furnace according to claim 2, which is characterized in that the guard block includes: the graphite
Tray step and the coating, the graphite tray step are wrapped on the outer surface of the coating.
15. the thermal field structure of single crystal growing furnace according to claim 2, which is characterized in that the guard block includes: the graphite
Tray step and the graphite paper, the graphite tray step are wrapped on the outer surface of the graphite paper.
16. the thermal field structure of single crystal growing furnace according to claim 2, which is characterized in that the guard block includes: graphite tray
Step, graphite paper and coating, the graphite paper are arranged on the outer surface of the coating, and the graphite tray step is wrapped in institute
It states on the outer surface of graphite paper.
17. a kind of single crystal growing furnace, which is characterized in that the single crystal growing furnace has the heat of the described in any item single crystal growing furnaces of claim 1-16
Field structure.
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