CN109569262A - The method, apparatus and application of chlorosilane in a kind of removal polysilicon tail gas - Google Patents
The method, apparatus and application of chlorosilane in a kind of removal polysilicon tail gas Download PDFInfo
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- CN109569262A CN109569262A CN201811594353.3A CN201811594353A CN109569262A CN 109569262 A CN109569262 A CN 109569262A CN 201811594353 A CN201811594353 A CN 201811594353A CN 109569262 A CN109569262 A CN 109569262A
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- Prior art keywords
- tail gas
- chlorosilane
- polysilicon tail
- polysilicon
- absorbent module
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 77
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 75
- 239000005046 Chlorosilane Substances 0.000 title claims abstract description 53
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000002250 absorbent Substances 0.000 claims abstract description 30
- 230000002745 absorbent Effects 0.000 claims abstract description 30
- 238000001816 cooling Methods 0.000 claims abstract description 24
- 238000005070 sampling Methods 0.000 claims abstract description 21
- 230000007246 mechanism Effects 0.000 claims abstract description 19
- 238000009833 condensation Methods 0.000 claims abstract description 17
- 230000005494 condensation Effects 0.000 claims abstract description 17
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 15
- 239000003463 adsorbent Substances 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims description 82
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 21
- 238000012545 processing Methods 0.000 claims description 10
- 230000008676 import Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 239000003507 refrigerant Substances 0.000 claims description 4
- 230000008520 organization Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 6
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000012360 testing method Methods 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- POFAUXBEMGMSAV-UHFFFAOYSA-N [Si].[Cl] Chemical compound [Si].[Cl] POFAUXBEMGMSAV-UHFFFAOYSA-N 0.000 description 3
- 150000001335 aliphatic alkanes Chemical class 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- -1 boride Chemical compound 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 229910003822 SiHCl3 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001720 carbohydrates Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/81—Solid phase processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/68—Halogens or halogen compounds
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
- G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/20—Halogens or halogen compounds
- B01D2257/204—Inorganic halogen compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Environmental & Geological Engineering (AREA)
- Biomedical Technology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Food Science & Technology (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
The present invention relates to technical field of polysilicon production, disclose a kind of method for removing chlorosilane in polysilicon tail gas, including following treatment process: collecting, collect polysilicon tail gas；The polysilicon tail gas being collected into is carried out condensation process, makes it that part chlorosilane be precipitated by condensation；It absorbs, by the polysilicon tail gas after condensation process by adsorbent, continues to be adsorbed and removed remaining chlorosilane in tail gas.Also disclose a kind of device for removing chlorosilane in polysilicon tail gas, including sampling assemble and deep cooling mechanism；Pipeline is connected on the sampling assemble, pipeline passes through deep cooling mechanism and is connected with absorbent module after cooling, is filled with adsorbent in absorbent module；The absorbent module has outlet.The method and device of chlorosilane can remove the chlorosilane in tail gas in this removal polysilicon tail gas, easy to operate effectively to protect detection device in detecting tail gas when trace phosphine gas content, prolong its service life, reduction testing cost.
Description
Technical field
The present invention relates to technical field of polysilicon production, more particularly to a kind of side of chlorosilane in removal polysilicon tail gas
Method, device and application.
Background technique
Electronic-grade polycrystalline silicon is the basic material of generation information technology industry and photovoltaic industry, with high-efficiency solar electricity
The fast development progress of pool technology, more stringent requirements are proposed for quality and appearance to polycrystalline silicon for photovoltaic use.In production of polysilicon
In, the impurity content in tail gas can embody the clean level of whole system, and impurity mainly has chloride, boride, arsenic
Object, phosphide, carbohydrate etc..Wherein boron, phosphorus compound seriously affect polysilicon product quality, especially influence resistivity
Size and stability.For this purpose, measuring phosphorus in silicon wafer by detecting to the phosphine gas generated in polysilicon production process
Content, to be monitored and instruct to technique.About detection, generally using trace in flame photometric detector detection tail gas
Phosphine gas.And due to containing a certain amount of HCl, SiH in the tail gas of recycling2Cl2、SiHCl3And SiCl4, especially chlorine silicon
The presence of alkane gas can make detector photomultiplier tube by a degree of damage, cause testing result inaccurate.Therefore,
The invention proposes a kind of method of chlorosilane in removal polysilicon tail gas and the devices of application this method.
Summary of the invention
The present invention is intended to provide the method, apparatus of chlorosilane and application are in a kind of removal polysilicon tail gas to solve existing skill
Above-mentioned technical problem in art.
The technical solution adopted by the present invention are as follows:
A kind of method of chlorosilane in removal polysilicon tail gas, including following treatment process:
It collects, collects polysilicon tail gas；
The polysilicon tail gas being collected into is carried out condensation process, makes it that part chlorosilane be precipitated by condensation；
It absorbs, by the polysilicon tail gas after condensation process by adsorbent, continues to be adsorbed and removed remaining chlorine silicon in tail gas
Alkane.
The method of chlorosilane in the removal polysilicon tail gas provided according to the present invention, finally, collecting by absorbing processing
Polysilicon tail gas.
According to the method for chlorosilane in above-mentioned removal polysilicon tail gas, polysilicon tail gas is used after this method is handled
The content of trace hydrogen phosphide in measurement tail gas.
The device of chlorosilane in a kind of removal polysilicon tail gas, including sampling assemble and deep cooling mechanism；The sampling assemble
On be connected with pipeline, pipeline passes through deep cooling mechanism and is connected with absorbent module after cooling, is filled with adsorbent in absorbent module；Institute
Stating absorbent module has outlet.
The device of chlorosilane in the removal polysilicon tail gas provided according to the present invention, the outlet of the absorbent module is connected with
Collection assembly is connected with aspiration pump between collection assembly and absorbent module；The sampling assemble is sampling bag, and collection assembly is to receive
Collect bag.
The device of chlorosilane in the removal polysilicon tail gas provided according to the present invention, the absorbent module are accommodating cylinder,
One end is import, and the other end is outlet；The adsorbent elements filled in it are NaOH.
The device of chlorosilane, the deep cooling mechanism are cold-trap device in the removal polysilicon tail gas provided according to the present invention,
It is loaded with refrigerant with refrigerating chamber in refrigerating chamber, fixation is coated with heat insulation layer outside refrigerating chamber.
The device of chlorosilane, further includes being connected on pipeline, and set in the removal polysilicon tail gas provided according to the present invention
Condenser pipe between sampling assemble and absorbent module, condenser pipe are placed in deep cooling mechanism.
The device of chlorosilane, further includes being set to deep cooling survey within the organization in the removal polysilicon tail gas provided according to the present invention
Temperature meter, thermometric are calculated as temperature sensor.
According to the device of chlorosilane in above-mentioned removal polysilicon tail gas, polysilicon tail gas is used after device processing
The content of trace hydrogen phosphide in measurement tail gas.
Beneficial effects of the present invention:
It collects in polysilicon tail gas to sampling assemble, and places it in cold-trap mechanism and condense, make that part chlorosilane is precipitated；
Then, continue the polysilicon tail gas after condensation process through absorbent module, in adsorbent be adsorbed and removed in tail gas again
Remaining chlorosilane is discharged from the outlet of absorbent module later.
The method and device of chlorosilane can remove the chlorosilane in tail gas in this removal polysilicon tail gas, easy to operate to have
Effect.Polysilicon tail gas removes chlorosilane gas, measures the trace phosphatization in the tail gas later after this method or device processing
Hydrogen can avoid it from being polluted corrosion and damage by chlorosilane in measurement with effective protection detection device, and extension detection device uses the longevity
Life reduces testing cost.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the device of chlorosilane in removal polysilicon tail gas provided in an embodiment of the present invention；
In figure:
1, sampling assemble 2, pipeline 3, deep cooling mechanism 4, condenser pipe
5, heat insulation layer 6, absorbent module 7, aspiration pump 8, collection assembly
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing, to the present invention into
One step is described in detail.Obviously, described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.
Based on the embodiments of the present invention, obtained by those of ordinary skill in the art without making creative efforts all
Other embodiments shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation or
Person is constructed and operated in a specific orientation, therefore it is not considered as limiting the invention.In addition, term " first ", " the
Two ", " third " is used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；When
Right, it can also be mechanical connection, be also possible to be electrically connected；In addition, it can also be and be connected directly, be also possible to pass through centre
Medium is indirectly connected, or can be the connection inside two elements.For the ordinary skill in the art, Ke Yigen
The concrete meaning of above-mentioned term in the present invention is understood according to concrete condition.
Embodiment 1
The embodiment provides a kind of methods of chlorosilane in removal polysilicon tail gas, including following processing work
Sequence:
It collects, collects polysilicon tail gas；Specifically, sample collection bag, which can be used, is collected storage.
The polysilicon tail gas being collected into is carried out condensation process, makes it that part chlorosilane be precipitated by condensation；Specifically, by upper
The sample collection bag stated, which is placed in the refrigerants such as liquid nitrogen, carries out condensation process, so that its temperature is dropped to -40 DEG C or so, polysilicon tail gas
In chlorosilane can be precipitated.It should be noted that can be defeated by pipeline 2 by the polysilicon tail gas in it in sample collection bag
During being sent to collecting bag, condensation process is carried out to polysilicon tail gas.
It absorbs, by the polysilicon tail gas after condensation process by adsorbent, continues to be adsorbed and removed remaining chlorine silicon in tail gas
Alkane.Specifically, continuing through adsorbent through the above-mentioned polysilicon tail gas by condensation process and part chlorosilane of going out, adsorb
Agent continues to absorb remaining chlorosilane in it.Adsorbent is usually NaOH particle.The polysilicon of processing is absorbed by NaOH particle
Tail gas, in chlorosilane be substantially achieved removing or content is extremely low, to the detection device of later period measurement trace hydrogen phosphide
Corrosion and damage is extremely low.
Finally, collecting the polysilicon tail gas by absorbing processing.Specifically, collecting processed polysilicon using collecting bag
Tail gas.
Embodiment 2
Based on inventive concept same as Example 1, the embodiment provides in above-mentioned removal polysilicon tail gas
A kind of application mode of the method for chlorosilane, polysilicon tail gas is after this method is handled, for measuring trace phosphatization in tail gas
The content of hydrogen.Specifically, being detected with flame photometric detector to Phosphine content in polysilicon tail gas.
Embodiment 3
As shown in Figure 1, the embodiment provides a kind of removal is more based on inventive concept same as Example 1
The device of chlorosilane in crystal silicon tail gas, including sampling assemble 1 and deep cooling mechanism 3；It is connected with pipeline 2 on the sampling assemble 1, manages
Road 2 passes through deep cooling mechanism 3 and is connected with absorbent module 6 after cooling, is filled with adsorbent in absorbent module 6；The absorbent module 6
With outlet.
Polysilicon tail gas 2 conveying by the road in sampling assemble 1, first passes through 3 cooling treatment of deep cooling mechanism, is condensed out part
Chlorosilane adsorbs remaining chlorosilane using absorbent module 6, is finally discharged from the outlet of absorbent module 6.
The outlet of absorbent module 6 is connected with collection assembly 8, and aspiration pump 7 is connected between collection assembly 8 and absorbent module 6；
The sampling assemble 1 is sampling bag, and collection assembly 8 is collecting bag.Aspiration pump 7 can aspirate the polysilicon tail gas in sampling bag defeated
It is sent in collecting bag.Common micro-suction pump 7 can meet using purpose.Micro-suction pump 7 (also known as minipump)
Model ZQ370-02PM, voltage rating DC 12V, flow 2L/min, manufacturer is the really suitable limited public affairs of electronics of Dongguan City
Department.
Absorbent module 6 is accommodating cylinder, and one end is import, and the other end is outlet；Adsorbent elements of filling are in it
NaOH。
Polysilicon tail gas is passed through from the import of absorbent module 6, is discharged after NaOH adsorption treatment, and from its outlet.It inhales
Attached dose is usually NaOH particle.
Deep cooling mechanism 3 is cold-trap device, and with refrigerating chamber, refrigerant, fixed cladding outside refrigerating chamber are loaded in refrigerating chamber
There is heat insulation layer 5.
It further include the condenser pipe 4 for being connected on pipeline 2, and being set between sampling assemble 1 and absorbent module 6, condenser pipe 4 is set
In in deep cooling mechanism 3.
Condenser pipe 4 is stainless steel material, diameter 6mm, long 20cm.Appropriate liquid nitrogen is added in deep cooling mechanism 3, condenser pipe 4 is set
Enter in liquid nitrogen, when the temperature of polysilicon tail gas drops to -40 DEG C, in chlorosilane can be precipitated.
It further include the thermo detector in deep cooling mechanism 3, thermometric is calculated as temperature sensor.
Thermo detector is used to detect the temperature of condensation polysilicon tail gas, common thermocouple temperature sensor may be selected, this is
Commercially available common temperature measurement tool, range is preferably at -200~200 DEG C.
Embodiment 4
Based on inventive concept same as Example 3, the embodiment provides in above-mentioned removal polysilicon tail gas
A kind of application mode of the device of chlorosilane, polysilicon tail gas is after device processing, for measuring trace phosphatization in tail gas
The content of hydrogen.Specifically, being detected with flame photometric detector to Phosphine content in polysilicon tail gas.
Finally, it should be noted that the above various embodiments is only preferred embodiment of the invention to illustrate skill of the invention
Art scheme, rather than its limitations, when being less limitation the scope of the patents of the invention；Although referring to foregoing embodiments to the present invention
It is described in detail, those skilled in the art should understand that: it still can be to recorded in foregoing embodiments
Technical solution modify, or equivalent substitution of some or all of the technical features；And these modification or
Replacement, the range for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution；In addition, by of the invention
Technical solution it is direct or indirect be used in other related technical areas, similarly include in scope of patent protection of the invention
It is interior.
Claims (10)
1. a kind of method of chlorosilane in removal polysilicon tail gas, which is characterized in that including following treatment process:
It collects, collects polysilicon tail gas；
The polysilicon tail gas being collected into is carried out condensation process, makes it that part chlorosilane be precipitated by condensation；
It absorbs, by the polysilicon tail gas after condensation process by adsorbent, continues to be adsorbed and removed remaining chlorosilane in tail gas.
2. the method for chlorosilane in removal polysilicon tail gas according to claim 1, which is characterized in that finally, collecting warp
Cross the polysilicon tail gas for absorbing processing.
3. the method for chlorosilane in the removal polysilicon tail gas as described in any in claim 1,2, polysilicon tail gas is by being somebody's turn to do
After method processing, for measuring the content of trace hydrogen phosphide in tail gas.
4. the device of chlorosilane in a kind of removal polysilicon tail gas, which is characterized in that including sampling assemble and deep cooling mechanism；It is described
Pipeline is connected on sampling assemble, pipeline passes through deep cooling mechanism and is connected with absorbent module after cooling, filling in absorbent module
There is adsorbent；The absorbent module has outlet.
5. the device of chlorosilane in removal polysilicon tail gas according to claim 4, which is characterized in that the absorbent module
Outlet be connected with collection assembly, aspiration pump is connected between collection assembly and absorbent module；The sampling assemble is sampling bag,
Collection assembly is collecting bag.
6. the device of chlorosilane in removal polysilicon tail gas according to claim 4, which is characterized in that the absorbent module
To accommodate cylinder, one end is import, and the other end is outlet；The adsorbent elements filled in it are NaOH.
7. the device of chlorosilane in removal polysilicon tail gas according to claim 4, which is characterized in that the deep cooling mechanism
Refrigerant is loaded in refrigerating chamber with refrigerating chamber for cold-trap device, fixation is coated with heat insulation layer outside refrigerating chamber.
8. the device of chlorosilane in removal polysilicon tail gas according to claim 4, which is characterized in that further include being connected to
On pipeline, and the condenser pipe being set between sampling assemble and absorbent module, condenser pipe are placed in deep cooling mechanism.
9. the device of chlorosilane in removal polysilicon tail gas according to claim 4, which is characterized in that further include being set to deeply
Cold thermo detector within the organization, thermometric are calculated as temperature sensor.
10. the device of chlorosilane in the removal polysilicon tail gas as described in any in claim 4-9, polysilicon tail gas is by being somebody's turn to do
After device processing, for measuring the content of trace hydrogen phosphide in tail gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811594353.3A CN109569262A (en) | 2018-12-25 | 2018-12-25 | The method, apparatus and application of chlorosilane in a kind of removal polysilicon tail gas |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811594353.3A CN109569262A (en) | 2018-12-25 | 2018-12-25 | The method, apparatus and application of chlorosilane in a kind of removal polysilicon tail gas |
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| CN201811594353.3A Pending CN109569262A (en) | 2018-12-25 | 2018-12-25 | The method, apparatus and application of chlorosilane in a kind of removal polysilicon tail gas |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110918001A (en) * | 2019-12-13 | 2020-03-27 | 亚洲硅业(青海)股份有限公司 | Method and apparatus for separating high boiling substance |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110918001A (en) * | 2019-12-13 | 2020-03-27 | 亚洲硅业(青海)股份有限公司 | Method and apparatus for separating high boiling substance |
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