CN109560098A - Imaging sensor and forming method thereof - Google Patents
Imaging sensor and forming method thereof Download PDFInfo
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- CN109560098A CN109560098A CN201811425861.9A CN201811425861A CN109560098A CN 109560098 A CN109560098 A CN 109560098A CN 201811425861 A CN201811425861 A CN 201811425861A CN 109560098 A CN109560098 A CN 109560098A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
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- Nanotechnology (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
A kind of imaging sensor and forming method thereof, described image sensor includes: semiconductor substrate, and logical device and one-way conduction structure are formed in the semiconductor substrate；Metal interconnecting layer has in the metal interconnecting layer positioned at the surface of the semiconductor substrate and lets out electric interconnection structure and logic interconnection structure；At least three layers of photoelectric conversion layer stacked, positioned at the surface of the metal interconnecting layer, different photoelectric conversion layers is electrically connected to different logical devices via the logic interconnection structure；Gasket construction, positioned at the surface of at least three layers photoelectric conversion layer of the stacking, at least three layers of photoelectric conversion layer of the stacking are let out electric interconnection structure and one-way conduction structure and are electrically connected with the gasket construction via described.The present invention program can export the photo-generated carrier in photoelectric conversion layer, reduce a possibility that streaking occurs.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors more particularly to a kind of imaging sensor and forming method thereof.
Background technique
Imaging sensor is the core component of picture pick-up device, realizes image taking function by converting optical signals into electric signal
Energy.By taking cmos image sensor (CMOS Image Sensors, CIS) device as an example, since it is with low-power consumption and high noise
Than the advantages of, therefore be widely applied in various fields.
However, in the prior art, forming the photodiode (Photo in pixel device using ion implantation technology
Diode, PD), it is easy to generate semiconductor substrate damage, and the size limitation of manual pixel device, the ruler of photodiode
Very little often smaller, the photo-generated carrier resulted in is less；And during forming optical filtering matrix, due to optical filtering
The prices of raw materials are expensive, cause production cost higher.
In a kind of imaging sensor, photo-generated carrier is generated using the photoelectric conversion layer of stacking, then passes through conductive knot
The photo-generated carrier is transmitted to the logical device by structure and metal interconnection structure, can independent of photodiode and
Optical filtering can be realized photoelectric converting function and be collected to photo-generated carrier, since the surface size of photoelectric conversion layer can
To be greater than the size of photodiode in the prior art, more photo-generated carriers are contributed to form.
However, photo-generated carrier needs to move farther away path transmission into logical device in above-mentioned imaging sensor,
The photo-generated carrier generated when a preceding illumination is easy to happen the problem of photoelectric conversion layer remains, is caused to a rear illumination shape
At image have an impact, occur streaking the problem of.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of imaging sensors and forming method thereof, can be by photoelectric conversion layer
Interior photo-generated carrier export, reduces a possibility that streaking occurs.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of imaging sensor, comprising: semiconductor substrate, institute
It states and is formed with logical device and one-way conduction structure in semiconductor substrate；Metal interconnecting layer, positioned at the semiconductor substrate
Surface has in the metal interconnecting layer and lets out electric interconnection structure and logic interconnection structure；At least three layers of photoelectric conversion layer stacked,
Positioned at the surface of the metal interconnecting layer, different photoelectric conversion layers is electrically connected to different patrol via the logic interconnection structure
Collect device；Gasket construction, positioned at the surface of at least three layers photoelectric conversion layer of the stacking, at least three layers of photoelectricity of the stacking
Conversion layer is let out electric interconnection structure and one-way conduction structure and is electrically connected with the gasket construction via described.
Optionally, the one-way conduction structure has a first end and a second end, and flows through the electronics of the one-way conduction structure
Flow direction be restricted to from the first end to second end, it is described let out electric interconnection structure include: liner interconnection structure and
Pairs of first end interconnection structure and second end interconnection structure, the first end of the first end interconnection structure are connected to described unidirectional
The first end of conducting structure, the second end of the first end interconnection structure are connected to the photoelectric conversion layer, and the second end is mutual
The first end of connection structure is connected to the second end of the one-way conduction structure, and the second end of the second end interconnection structure is connected to
The liner interconnection structure；Wherein, different photoelectric conversion layers is connected to different lists via different first end interconnection structures
To conducting structure.
Optionally, the one-way conduction structure is PN junction diode, and the first end of the PN junction diode is the area N, described
The second end of PN junction diode is the area P.
Optionally, described image sensor further include: pad switch device is located in the semiconductor substrate, the lining
Padding switching device includes liner first end, liner second end and liner control terminal；Wherein, the liner interconnection structure includes connecting
It is connected to the first interconnection structure of liner of the liner first end and is connected to the mutually connection of liner second of the liner second end
Structure, wherein the first interconnection structure of the liner is connected to the second end interconnection structure, and the second interconnection structure of the liner is electrically connected
It is connected to the gasket construction；The liner control terminal is for controlling the pad switch break-over of device or shutdown.
Optionally, the pad switch device is MOS device；Wherein, the liner first end is the source of the MOS device
Area, the liner second end are the drain region of the MOS device, and the liner control terminal is the grid of the MOS device.
Optionally, described image sensor further include: one end of cushioning conductive structure, the cushioning conductive structure connects institute
Gasket construction is stated, the other end is connected to the second interconnection structure of the liner.
Optionally, described image sensor further includes following one or more: multiple photoelectric conductance structures, each photoconduction
One end of electric structure connects the photoelectric conversion layer, and the other end is connected to the logic interconnection structure, wherein different photoelectricity turns
It changes layer and is connected to different logic interconnection structures via different photoelectric conductance structures；Multiple unilateal conduction structures, it is each unidirectional
One end of conductive structure connects the photoelectric conversion layer, and the other end is connected to the first end interconnection structure, wherein different light
Electric conversion layer is connected to different first end interconnection structures via different unilateal conduction structures.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of forming method of imaging sensor, comprising: provide
Semiconductor substrate；Logical device and one-way conduction structure are formed in the semiconductor substrate；In the semiconductor substrate
Surface forms metal interconnecting layer, has in the metal interconnecting layer and lets out electric interconnection structure and logic interconnection structure；In the metal
The surface of interconnection layer, at least three layers of photoelectric conversion layer, the different photoelectric conversion layers for forming stacking link via the logic mutual
Structure is electrically connected to different logical devices；On the surface of at least three layers photoelectric conversion layer of the stacking, gasket construction, institute are formed
At least three layers of photoelectric conversion layer for stating stacking let out electric interconnection structure and one-way conduction structure and gasket construction electricity via described
Connection.
Optionally, the one-way conduction structure has a first end and a second end, and flows through the electronics of the one-way conduction structure
Flow direction be restricted to from the first end to second end, it is described let out electric interconnection structure include: liner interconnection structure and
Pairs of first end interconnection structure and second end interconnection structure, the first end of the first end interconnection structure are connected to described unidirectional
The first end of conducting structure, the second end of the first end interconnection structure are connected to the photoelectric conversion layer, and the second end is mutual
The first end of connection structure is connected to the second end of the one-way conduction structure, and the second end of the second end interconnection structure is connected to
The liner interconnection structure；Wherein, different photoelectric conversion layers is connected to different lists via different first end interconnection structures
To conducting structure.
Optionally, the one-way conduction structure is PN junction diode, and the first end of the PN junction diode is the area N, described
The second end of PN junction diode is the area P.
Optionally, before forming the metal interconnecting layer, the forming method of the imaging sensor further include: in institute
State and form pad switch device in semiconductor substrate, the pad switch device include liner first end, liner second end and
Pad control terminal；On the surface of the semiconductor substrate, forming metal interconnecting layer includes: to be formed to be connected to the liner first end
The first interconnection structure of liner and be connected to it is described liner second end the second interconnection structure of liner；Wherein, the liner the
One interconnection structure is connected to the second end interconnection structure, and the second interconnection structure of the liner is electrically connected to the gasket construction,
The liner control terminal is for controlling the pad switch break-over of device or shutdown.
Optionally, the pad switch device is MOS device；Wherein, the liner first end is the source of the MOS device
Area, the liner second end are the drain region of the MOS device, and the liner control terminal is the grid of the MOS device.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In embodiments of the present invention, by forming one-way conduction structure in semiconductor substrate, the stacking can be made
At least three layers of photoelectric conversion layer are let out electric interconnection structure and one-way conduction structure and are electrically connected with the gasket construction via described, thus
It realizes and exports the photo-generated carrier in photoelectric conversion layer, the photoproduction remained in photoelectric conversion layer when a preceding illumination is avoided to carry
The image that stream forms a rear illumination has an impact, and reduces a possibility that streaking occurs.
Further, the one-way conduction structure has a first end and a second end, and the electric interconnection structure of letting out includes: that liner is mutual
Connection structure and pairs of first end interconnection structure and second end interconnection structure can be made using the scheme of the embodiment of the present invention
At least three layers of photoelectric conversion layer of the stacking mutually link via the first end interconnection structure, one-way conduction structure, second end
Structure and liner interconnection structure are electrically connected with the gasket construction, to preferably lead the photo-generated carrier in photoelectric conversion layer
Out, a possibility that streaking occurs is reduced；And due to having the function of one-way conduction, photoelectric conversion can be back to avoid electron stream
Layer causes electronics residue problem to aggravate, to improve the quality of imaging sensor.
Further, by the way that pad switch device is arranged, the photo-generated carrier in photoelectric conversion layer can be made mutual from second end
Link structure and reach liner first end by the first interconnection structure of liner, the pad switch device is then controlled by liner control terminal
Part on or off and it is moved to liner second end in conducting, and then is transmitted to gasket construction.Using the embodiment of the present invention
Scheme, can by pad switch device select photoelectric conversion layer in photo-generated carrier whether need to export, to only exist
Remaining photo-generated carrier is just exported after the completion of illumination step, avoids forming leakage current in During Illumination, helps to improve figure
As quality.
Further, it by the way that cushioning conductive structure is arranged, may be implemented that the gasket construction is made to be electrically connected to the liner mutually
Link structure, so as to move photo-generated carrier remaining in photoelectric conversion layer by liner interconnection structure, cushioning conductive structure
It moves to gasket construction, to realize export electronics.
Detailed description of the invention
Fig. 1 is a kind of flow chart of the forming method of imaging sensor in the embodiment of the present invention；
Fig. 2 to Figure 12 is that the corresponding device of each step cuts open in a kind of forming method of imaging sensor in the embodiment of the present invention
Face structural schematic diagram.
Specific embodiment
As previously mentioned, generating photo-generated carrier in a kind of imaging sensor using the photoelectric conversion layer of stacking, then leading to
It crosses conductive structure and metal interconnection structure and the photo-generated carrier is transmitted to the logical device, however be easy to happen image and drag
The problem of tail.
The present inventor has found that in above-mentioned imaging sensor, photo-generated carrier is needed across photoelectricity after study
Conversion layer and dielectric layer, conducting structure, metal interconnection structure etc. reach in logical device, and mobile path farther out, is easy hair
The photo-generated carrier generated when an illumination before death leads to the figure formed to a rear illumination the problem of photoelectric conversion layer remains
As having an impact, streaking occurs.
In embodiments of the present invention, by forming one-way conduction structure in semiconductor substrate, the stacking can be made
At least three layers of photoelectric conversion layer are let out electric interconnection structure and one-way conduction structure and are electrically connected with the gasket construction via described, thus
It realizes and exports the photo-generated carrier in photoelectric conversion layer, the photoproduction remained in photoelectric conversion layer when a preceding illumination is avoided to carry
The image that stream forms a rear illumination has an impact, and reduces a possibility that streaking occurs.
It is understandable to enable above-mentioned purpose of the invention, feature and beneficial effect to become apparent, with reference to the accompanying drawing to this
The specific embodiment of invention is described in detail.
Referring to Fig.1, Fig. 1 is a kind of flow chart of the forming method of imaging sensor in the embodiment of the present invention.Described image
The forming method of sensor may include step S11 to step S15:
Step S11: semiconductor substrate is provided；
Step S12: logical device and one-way conduction structure are formed in the semiconductor substrate；
Step S13: metal interconnecting layer is formed on the surface of the semiconductor substrate, has in the metal interconnecting layer and lets out electricity
Interconnection structure and logic interconnection structure；
Step S14: on the surface of the metal interconnecting layer, at least three layers of photoelectric conversion layer of stacking, different light are formed
Electric conversion layer is electrically connected to different logical devices via the logic interconnection structure；
Step S15: on the surface of at least three layers photoelectric conversion layer of the stacking, forming gasket construction, the stacking
At least three layers of photoelectric conversion layer are let out electric interconnection structure and one-way conduction structure and are electrically connected with the gasket construction via described.
Above-mentioned each step is illustrated below with reference to Fig. 2 to Figure 12.
Fig. 2 to Figure 12 is that the corresponding device of each step cuts open in a kind of forming method of imaging sensor in the embodiment of the present invention
Face structural schematic diagram.
Referring to Fig. 2, semiconductor substrate 100 is provided, the front of the semiconductor substrate 100 is formed with logical device 110.
Specifically, the semiconductor substrate 100 can also may be used for the material of silicon substrate or the semiconductor substrate 100
Think the material appropriate applied to imaging sensor such as germanium, SiGe, silicon carbide, GaAs or gallium indium, the semiconductor
Substrate 100 can also have epitaxial layer for the silicon substrate of insulator surface or the germanium substrate of insulator surface, or growth
The substrate of (Epitaxy layer, Epi layer).Preferably, the semiconductor substrate 100 can be the semiconductor being lightly doped
Substrate, and doping type is opposite with drain region.Specifically, it can be realized by carrying out ion implanting to the semiconductor substrate 100
Deep trap adulterates (Deep Well Implant).
Wherein, the logical device 110 may include shallow groove isolation structure 111, gate structure 112 and source and drain doping area
113.Wherein, the gate structure 112 and source and drain doping area 113 may belong to the functional areas of the logical device 110, such as
For the MOS transistor of the logical device, the shallow groove isolation structure 111 can be used for being isolated adjacent functional areas.
Further, pad switch device is formed in the semiconductor substrate 100, the pad switch device includes liner
First end 114, liner second end 115 and liner control terminal 116.
Wherein, the liner control terminal 116 can be used for controlling the pad switch break-over of device or shutdown.
In embodiments of the present invention, can by pad switch device select photoelectric conversion layer in photo-generated carrier whether
It needs to export, to only just export remaining photo-generated carrier after the completion of illumination step, avoids forming leakage in During Illumination
Electric current helps to improve image quality.
Further, the pad switch device can be MOS device；Wherein, the liner first end 114 can be
The source region of the MOS device, the liner second end 115 can be the drain region of the MOS device, the liner control terminal 116
It can be the grid of the MOS device.
Wherein, the grid of the MOS device can more than be applied with variable predeterminated voltage so that the source of the MOS device
It is connected or interrupts between area and the drain region of the MOS device.
In embodiments of the present invention, it is MOS device by setting pad switch device, the MOS of technical maturity can be used
Device realizes the function of controlling the pad switch break-over of device or shutdown, helps to reduce technique research and development complexity and improve
The quality of imaging sensor.
It should be pointed out that the function of on or off can also be realized using other conventional devices, of the invention real
It applies in example, with no restriction to the specific structure of pad switch device.
Referring to Fig. 3, patterned first mask layer 161 is formed on the surface of the semiconductor substrate 100, with described first
Mask layer 161 is exposure mask, in the semiconductor substrate 100, forms one-way conduction structure.
Wherein, the one-way conduction structure can limit the flow direction for flowing through the electronics of the one-way conduction structure.
In specific implementation, the one-way conduction structure can have first end 101 and second end 102, flow through the list
It is restricted to the flow direction of the electronics of conducting structure from the first end 101 to second end 102.
It in embodiments of the present invention, can be to avoid electron stream due to having the function of that one-way conduction structure provides one-way conduction
Being back to photoelectric conversion layer causes electronics residue problem to aggravate, to help to improve the quality of imaging sensor.
Further, the one-way conduction structure can be PN junction diode, and the first end of the PN junction diode is N
Area, the second end of the PN junction diode are the area P.
It in embodiments of the present invention, is PN junction diode by setting one-way conduction structure, it can be using technical maturity
PN junction diode realizes one-way conduction function, helps to reduce technique research and development complexity and improves the quality of imaging sensor.
It should be pointed out that one-way conduction function can also be realized using other conventional devices, in the embodiment of the present invention
In, with no restriction to the specific configuration of one-way conduction structure.
Referring to Fig. 4, the top view of imaging sensor and the sectional view along cutting line A1-A2 is shown in FIG. 4.
On the surface of the semiconductor substrate 100, metal interconnecting layer 116 is formed, there is gold in the metal interconnecting layer 116
Belong to interconnection structure 115 and interlayer dielectric layer 114.Wherein, the metal interconnection structure 115 can be connect with logical device 110.
Further, the metal interconnection structure 115 is located in the metal interconnecting layer 116, may include letting out electrical interconnection
Structure and logic interconnection structure.
Wherein, the logic interconnection structure is used to be connected to different logical devices 110, such as is connected to logical device
110 source and drain doping area 113, so that the different photoelectric conversion layers formed in subsequent technique are via the logic interconnection structure electricity
It is connected to different logical devices 110.
The electric interconnection structure of letting out may include: liner interconnection structure and pairs of first end interconnection structure 1153 and the
Two end interconnection structures 1154.One end of the first end interconnection structure 1153 is connected to the first end of the one-way conduction structure,
One end of the second end interconnection structure 1154 is connected to the second end of the one-way conduction structure.
Wherein, the step of forming the liner interconnection structure may include: to be formed to be connected to the liner first end 114
It pads the first interconnection structure 1151 and is connected to the second interconnection structure of liner 1152 of the liner second end 115.
In specific implementation, different second end interconnection structures 1154 can be with mutual conduction, and mutually links with liner first
Structure 1151 connects.
In embodiments of the present invention, the liner first is connected to mutually by the way that different second end interconnection structures 1154 is arranged
Link structure 1151, may be implemented to export the photo-generated carrier in photoelectric conversion layer to the gasket construction being subsequently formed, thus real
Now the photo-generated carrier in photoelectric conversion layer is exported, avoids the photoproduction current-carrying remained in photoelectric conversion layer when a preceding illumination
The image that son forms a rear illumination has an impact, and reduces a possibility that streaking occurs.
It should be pointed out that the metal interconnection structure 115 in the top view of the imaging sensor shown in Fig. 4 can not come
From same metal layer.In embodiments of the present invention, it needs to be arranged different second end interconnection structures 1154 and is connected to the liner
First interconnection structure 1151, however with no restriction for the configuration of specific implementation.
Conducting medium layer 122 is formed on the surface of the metal interconnecting layer 116 referring to Fig. 5, and then in conductive Jie
Conductive material 121 is filled on the inside of matter layer 122 and surface.
Specifically, patterned mask layer (not shown) is formed on the surface of the conducting medium layer 122, with the exposure mask
Layer is conducting medium layer 122 described in mask etching, to form conductive structure groove (not shown), and then fills conductive material 121,
Then the conductive material 121 is planarized using flatening process.
Referring to Fig. 6, the conductive material 121 (referring to Fig. 5) is etched, to obtain conductive structure 120.
Specifically, patterned mask layer (not shown) can be formed on the surface of the conductive material 121, is covered with described
Film layer is conductive material 121 described in mask etching, to form conductive structure 120.It is mutual that the conductive structure 120 connects the metal
Link the top of structure 115, different conductive structures 120 is electrically connected to different logical devices by metal interconnection structure 115
110.Wherein, the conductive structure 120 can form conductive layer 123 with conducting medium layer 122.
Further, the conductive structure 120 can be selected from: the lamination of titanium and tungsten and metal silicide, tungsten and
The lamination of metal silicide.
More specifically, it can be initially formed metal silicide layer, the metal silicide layer covers the conductive structure ditch
The bottom of slot and inner wall, then tungsten layer is formed on the surface of the metal silicide layer, or form the lamination of titanium layer and tungsten layer, into
And metal silicide layer is formed on the surface of tungsten layer or lamination.Wherein, the lamination of the titanium layer and tungsten layer can be two layers of titanium
The structure of tungsten layer is clipped between layer.
Specifically, the metal silicide refers to the hard compounds that metal and silicon generate, and is connected using metal silicide
Metal material and semiconductor material help to reduce interconnection resistance, improve contact effect.
Preferably, the material of the metal silicide can be nickel SiClx.
In embodiments of the present invention, by the way that multiple conductive structures 120 are arranged, and one end connection of conductive structure 120 is subsequent
The bottom of the connection structure of formation, the other end connect the top of metal interconnection structure 115, are directly connected to compared to by connection structure
To the top of metal interconnection structure 115, connecting metal material and semiconductor material using conductive structure 120 helps to reduce interconnection
Resistance improves contact effect.
It should be pointed out that being connected to different metal interconnection structures 115 according to different conductive structures 120, such as connect
It is connected to liner interconnection structure, first end interconnection structure, second end interconnection structure and logic interconnection structure, different lead may be implemented
Logical function.
Referring to Fig. 7, feux rouges photovoltaic conversion structure 130 is formed, can specifically include feux rouges insulating layer 131, feux rouges depletion layer
132, the feux rouges excitation layer 133 and feux rouges connection structure 134 of the feux rouges depletion layer 132 are stacked in.
In a kind of specific embodiment of the embodiment of the present invention, feux rouges insulating layer 131, feux rouges depletion layer can formed
After 132, the feux rouges depletion layer 132 and feux rouges insulating layer 131 are etched, (figure is not to form the first feux rouges connection groove
Show), and then the feux rouges connection structure 134 is formed in the first feux rouges connection groove.The then material of the feux rouges connection structure 134
Material can be consistent with the feux rouges excitation layer 133.
In another specific embodiment of the embodiment of the present invention, it can be etched after forming feux rouges insulating layer 131
The feux rouges insulating layer 131 connects groove (not shown) to form the second feux rouges, and then is formed in the second feux rouges connection groove
The feux rouges connection structure 134.Then the material of the feux rouges connection structure 134 can be consistent with the feux rouges depletion layer 132.
It should be pointed out that it is thin to form isolation in the inner wall that the first feux rouges connection groove or the second feux rouges connect groove
Film (not shown), so that after filling, the photo-generated carrier for helping to reduce packing material diffuses to the feux rouges insulating layer 131
Or even a possibility that conducting medium layer 122, improve isolation effect.
Wherein, feux rouges connection structure 134 may include feux rouges logical connection structure 1341, the feux rouges logical connection structure
1341 can be connected to logical device 110 by conductive structure 120 and logic interconnection structure, to help to excite feux rouges
The photo-generated carrier that layer 133 and feux rouges depletion layer 132 are formed is transmitted to logical device 110.
The feux rouges connection structure 134 can also be connected to described by conductive structure 120 and first end interconnection structure
The first end 101 of one-way conduction structure, thus the photo-generated carrier for forming feux rouges excitation layer 133 and feux rouges depletion layer 132
It can be transmitted to the first end 101 of the one-way conduction structure, and exported.
Specifically, the material of the feux rouges insulating layer 131 can be selected from: silica, silicon nitride.
In embodiments of the present invention, it is arranged between conducting medium layer 122 and conductive structure 120 and feux rouges depletion layer 132 and has
Have feux rouges insulating layer 131, help to prevent feux rouges photovoltaic conversion structure and conductive structure 120 and metal interconnection structure 115 it
Between generate photoelectron interference.
Specifically, the material of the feux rouges depletion layer 132 can be selected from: amorphous silicon, polysilicon, gallium nitride, germanium, germanium
Silicon, silicon carbide, GaAs and gallium indium.Preferably, it can be exhausted using amorphous silicon or polysilicon as the feux rouges
The material of layer 132, preferably to meet cost and quality requirements.
Further, the doping type of the feux rouges depletion layer 132 can be adulterated using p-type, be made for example, by using boron ion
For the Doped ions of the feux rouges depletion layer 132.
Further, the doping type of the feux rouges excitation layer 133 can use n-type doping, for example, by using phosphonium ion with
And Doped ions of the arsenic ion as the feux rouges excitation layer 133.Specifically, it can be connected in the feux rouges in groove and red
The surface of light depletion layer 132, it is heavy to be doped with n-type doping source using the material of the feux rouges excitation layer 133 as reaction source
Product reaction, forms the feux rouges excitation layer 133 with the surface in feux rouges depletion layer 132, connects (the ginseng of groove 139 in the feux rouges
According to Fig. 6) in formed feux rouges connection structure 134.
Specifically, the material of the feux rouges excitation layer 133 can be selected from: amorphous silicon, polysilicon, gallium nitride, germanium, germanium
Silicon, silicon carbide, GaAs and gallium indium.Preferably, it can be excited using amorphous silicon or polysilicon as the feux rouges
The material of layer 133, preferably to meet cost and quality requirements.
Further, the doping type of the feux rouges depletion layer 132 and feux rouges excitation layer 133 can be on the contrary, material can be with
It is identical.
In embodiments of the present invention, there is opposite mix by the way that the feux rouges depletion layer 132 and feux rouges excitation layer 133 is arranged
Miscellany type can form P-N junction, so as to realize photoelectric converting function, generate photo-generated carrier, and the feux rouges exhausts
Layer 132 can be limited and be obstructed to the moving direction of photo-generated carrier, help to promote photo-generated carrier along preset company
It is mobile to connect structure direction.
In specific implementation, imaging sensor may include multiple photoelectric conductance structures, wherein different photoelectric conversion layers
Different logic interconnection structures is connected to via different photoelectric conductance structures.
Specifically, corresponding to the photoelectric conductance structure of feux rouges may include the feux rouges logical connection structure 1341 and with
Its conductive structure 120 connected, one end connect the feux rouges photoelectric conversion layer (for example, feux rouges excitation layer 133), and the other end connects
It is connected to the logic interconnection structure.
In specific implementation, imaging sensor may include multiple unilateal conduction structures, wherein different photoelectric conversion layers
Different first end interconnection structures 101 is connected to via different unilateal conduction structures.
Specifically, it may include the feux rouges connection structure 134 corresponding to the unilateal conduction structure of feux rouges and connect with it
The conductive structure 120 connect, one end connect the feux rouges photoelectric conversion layer (for example, feux rouges excitation layer 133), and the other end is connected to
The first end interconnection structure.
In embodiments of the present invention, by the way that photoelectric conductance structure is arranged, the photoproduction formed in photoelectric conversion layer can be carried
Stream is transmitted to logical device 110；It, can be by photo-generated carrier remaining in photoelectric conversion layer by the way that unilateal conduction structure is arranged
It is transmitted to the first end 101 of one-way conduction structure.
Referring to Fig. 8, green light photovoltaic conversion structure 140 is formed, the green light photovoltaic conversion structure 140 is stacked in the feux rouges
Photovoltaic conversion structure 130.
Specifically, the formation green light photovoltaic conversion structure 140 may include: to form green light insulating layer 141, green light exhausts
Layer 142, green light excitation layer 143 and green light connection structure 144.
Wherein, green light connection structure 144 may include green light logical connection structure 1441, the green light logical connection structure
1441 can be connected to logical device 110 by conductive structure 120 and logic interconnection structure, to help to excite green light
The photo-generated carrier that layer 143 and green light depletion layer 142 are formed is transmitted to logical device 110.
The green light connection structure 144 can also be connected to described by conductive structure 120 and first end interconnection structure
The first end 101 of one-way conduction structure, thus the photo-generated carrier for forming green light excitation layer 143 and green light depletion layer 142
It can be transmitted to the first end 101 of the one-way conduction structure, and exported.
In specific implementation, in relation to formed green light photovoltaic conversion structure 140 more detailed contents please refer to above and
The description of formation feux rouges photovoltaic conversion structure 130 shown in Fig. 7 is executed, and details are not described herein again.
Referring to Fig. 9, blue light photovoltaic conversion structure 150 is formed, the blue light photovoltaic conversion structure 150 is stacked in the green light
Photovoltaic conversion structure 140.
Specifically, the formation blue light photovoltaic conversion structure 150 may include: to form blue light insulating layer 151, blue light exhausts
Layer 152, blue light excitation layer 153 and blue light connection structure 154.
Wherein, blue light connection structure 154 may include blue light logical connection structure 1541, the blue light logical connection structure
1541 can be connected to logical device 110 by conductive structure 120 and logic interconnection structure, to help to excite blue light
The photo-generated carrier that layer 153 and blue light depletion layer 152 are formed is transmitted to logical device 110.
The blue light connection structure 154 can also be connected to described by conductive structure 120 and first end interconnection structure
The first end 101 of one-way conduction structure, thus the photo-generated carrier for forming blue light excitation layer 153 and blue light depletion layer 152
It can be transmitted to the first end 101 of the one-way conduction structure, and exported.
In specific implementation, in relation to formed blue light photovoltaic conversion structure 150 more detailed contents please refer to above and
The description of formation feux rouges photovoltaic conversion structure 130 shown in Fig. 7 is executed, and details are not described herein again.
Referring to Fig.1 0, form isolation grid 170, at least three layers of photoelectric conversion layer of the stacking to different zones into
Row isolation.
Specifically, patterned grid mask layer (not shown) can be formed, using the grid mask layer as exposure mask, to institute
Blue light photovoltaic conversion structure 150, green light photovoltaic conversion structure 140, the lamination in feux rouges photovoltaic conversion structure 130 is stated to be carved
Erosion, to obtain grid groove, and then fills grid material in the grid groove, and grid 170 is isolated to be formed.
Further, the material of the isolation grid 170 can be dielectric material or metal material.
Preferably, the isolation grid 170 can be formed using dielectric material, such as can be selected from: silica, nitridation
Silicon helps to reduce metallic pollution, improves device quality.
Referring to Fig.1 1, form liner insulating layer 191, liner (Pad) layer 195 and liner through-hole (Via) 193.
Wherein, the material of the laying 195 can be tungsten metal or aluminum metal.
Referring to Fig.1 2, the laying 195 is performed etching, to form gasket construction 192, at least three layers of the stacking
Photoelectric conversion layer is let out electric interconnection structure and one-way conduction structure and is electrically connected with the gasket construction 192 via described.
In the prior art, usually there is gasket construction 192 and liner through-hole 193, can be provided for imaging sensor
The functions such as liner measurement are grounded or are imported other peripheral circuits.
It should be pointed out that in embodiments of the present invention, existing gasket construction 192 and liner through-hole can be multiplexed
193, additional gasket construction (for example, gasket construction 1921) can also be added and additional liner through-hole (for example, pads
Through-hole 1931).
It should be pointed out that it can be multiplexed the processing step to form existing gasket construction 192 and pad through-hole 193,
Cost will not be made to obviously increase adding additional gasket construction 1921 and additional liner through-hole 1931.
In specific implementation, imaging sensor may include cushioning conductive structure.
Specifically, cushioning conductive structure may include the liner through-hole 1931 and conductive structure connected to it 120,
One end connects the gasket construction, and the other end is connected to the second interconnection structure of the liner.
In embodiments of the present invention, it by the way that cushioning conductive structure is arranged, may be implemented to be electrically connected to the gasket construction
The liner interconnection structure, so as to which photo-generated carrier remaining in photoelectric conversion layer is passed through liner interconnection structure, liner
Conductive structure is moved to gasket construction 1921, to realize export electronics.
In embodiments of the present invention, by forming one-way conduction structure in semiconductor substrate 100, the stacking can be made
At least three layers of photoelectric conversion layer let out electric interconnection structure and one-way conduction structure via described and be electrically connected with the gasket construction, from
And realize and export the photo-generated carrier in photoelectric conversion layer, avoid the photoproduction remained in photoelectric conversion layer when a preceding illumination
The image that carrier forms a rear illumination has an impact, and reduces a possibility that streaking occurs.
In embodiments of the present invention, a kind of imaging sensor is additionally provided, may include: semiconductor lining as shown in figure 12
Bottom 100 is formed with logical device 110 and one-way conduction structure in the semiconductor substrate 100；Metal interconnecting layer 116, is located at
The surface of the semiconductor substrate 100 has in the metal interconnecting layer 116 and lets out electric interconnection structure and logic interconnection structure；Heap
Folded at least three layers of photoelectric conversion layer, positioned at the surface of the metal interconnecting layer 116, different photoelectric conversion layers is patrolled via described
It collects interconnection structure and is electrically connected to different logical devices；Gasket construction 1921, positioned at least three layers of photoelectric conversion of the stacking
The surface of layer, at least three layers of photoelectric conversion layer of the stacking via it is described let out electric interconnection structure and one-way conduction structure with it is described
Gasket construction 1921 is electrically connected.
Further, the one-way conduction structure can have first end 101 and second end 102, flows through and described unidirectionally leads
The flow direction of the electronics of logical structure is restricted to from the first end 101 to second end 102, and the electric interconnection structure of letting out can be with
It include: liner interconnection structure and pairs of first end interconnection structure and second end interconnection structure, the first end interconnection structure
First end be connected to the first end 101 of the one-way conduction structure, the second end of the first end interconnection structure is connected to institute
Photoelectric conversion layer is stated, the first end of the second end interconnection structure is connected to the second end 102 of the one-way conduction structure, described
The second end of second end interconnection structure is connected to the liner interconnection structure；Wherein, different photoelectric conversion layers is via different
First end interconnection structure is connected to different one-way conduction structures.
In embodiments of the present invention, at least three layers of photoelectric conversion layer of the stacking can be made to interconnect via the first end
Structure, one-way conduction structure, second end interconnection structure and liner interconnection structure are electrically connected with the gasket construction, thus more preferably
Ground exports the photo-generated carrier in photoelectric conversion layer, reduces a possibility that streaking occurs；And due to one-way conduction
Function, photoelectric conversion layer can be back to avoid electron stream causes electronics residue problem to aggravate, to improve the product of imaging sensor
Matter.
Further, the one-way conduction structure can be PN junction diode, and the first end of the PN junction diode is N
Area, the second end of the PN junction diode are the area P.
Further, described image sensor can also include: pad switch device, be located in the semiconductor substrate,
The pad switch device includes liner first end 114, liner second end 115 and liner control terminal 116；Wherein, the lining
Pad interconnection structure include be connected to it is described liner first end 114 the first interconnection structure of liner and be connected to it is described liner second
Second interconnection structure of liner at end 115, wherein the first interconnection structure of the liner is connected to the second end interconnection structure, institute
It states the second interconnection structure of liner and is electrically connected to the gasket construction 170；The liner control terminal 116 is opened for controlling the liner
Close break-over of device or shutdown.
In embodiments of the present invention, can by pad switch device select photoelectric conversion layer in photo-generated carrier whether
It needs to export, to only just export remaining photo-generated carrier after the completion of illumination step, avoids forming leakage in During Illumination
Electric current helps to improve image quality.
Further, the pad switch device can be MOS device；Wherein, the liner first end 114 is described
The source region of MOS device, the liner second end 115 are the drain region of the MOS device, and the liner control terminal 116 is the MOS
The grid of device.
Further, described image sensor can also include: cushioning conductive structure, one end of the cushioning conductive structure
The gasket construction is connected, the other end is connected to the second interconnection structure of the liner.
In embodiments of the present invention, it by the way that cushioning conductive structure is arranged, may be implemented to be electrically connected to the gasket construction
The liner interconnection structure, so as to which photo-generated carrier remaining in photoelectric conversion layer is passed through liner interconnection structure, liner
Conductive structure is moved to gasket construction, to realize export electronics.
Further, described image sensor can also include following one or more: multiple photoelectric conductance structures, each
One end of photoelectric conductance structure connects the photoelectric conversion layer, and the other end is connected to the logic interconnection structure, wherein different
Photoelectric conversion layer is connected to different logic interconnection structures via different photoelectric conductance structures；Multiple unilateal conduction structures, often
One end of a unilateal conduction structure connects the photoelectric conversion layer, and the other end is connected to the first end interconnection structure, wherein no
Same photoelectric conversion layer is connected to different first end interconnection structures via different unilateal conduction structures.
In embodiments of the present invention, by forming one-way conduction structure in semiconductor substrate, the stacking can be made
At least three layers of photoelectric conversion layer are let out electric interconnection structure and one-way conduction structure and are electrically connected with the gasket construction 170 via described,
The photo-generated carrier in photoelectric conversion layer is exported to realize, avoids the light remained in photoelectric conversion layer when a preceding illumination
The image that raw carrier forms a rear illumination has an impact, and reduces a possibility that streaking occurs.
It is please referred to above and shown in Fig. 1 to Figure 12 about the principle of the imaging sensor, specific implementation and beneficial effect
The associated description of forming method about imaging sensor, details are not described herein again.
It should be pointed out that passing through blue light photovoltaic conversion structure 150, green light photovoltaic conversion structure 140 and feux rouges light
Electric transformational structure 130 is transmitted in the photoelectron of logical device 110, may be mixed with the photoelectricity that the light of other colors generates
Son, according to the thickness of every layer of photoelectric conversion layer, can determine the photoelectricity that various light generate by calculating in specific implementation
The ratio of son, and then determine the parameter value (such as current value) of the corresponding electric signal of various light, to more accurately determine knot
Fruit.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (12)
1. a kind of imaging sensor characterized by comprising
Semiconductor substrate is formed with logical device and one-way conduction structure in the semiconductor substrate；
Metal interconnecting layer has in the metal interconnecting layer positioned at the surface of the semiconductor substrate and lets out electric interconnection structure and patrol
Collect interconnection structure；
At least three layers of photoelectric conversion layer stacked, positioned at the surface of the metal interconnecting layer, different photoelectric conversion layers is via institute
It states logic interconnection structure and is electrically connected to different logical devices；
Gasket construction, positioned at the surface of at least three layers photoelectric conversion layer of the stacking, at least three layers of photoelectricity of the stacking turn
Layer is changed to let out electric interconnection structure and one-way conduction structure via described and be electrically connected with the gasket construction.
2. imaging sensor according to claim 1, which is characterized in that
The one-way conduction structure has a first end and a second end, and flows through the flow direction quilt of the electronics of the one-way conduction structure
It is limited to from the first end to second end, the electric interconnection structure of letting out includes: liner interconnection structure and pairs of first end
Interconnection structure and second end interconnection structure, the first end of the first end interconnection structure are connected to the of the one-way conduction structure
One end, the second end of the first end interconnection structure are connected to the photoelectric conversion layer, and the first of the second end interconnection structure
End is connected to the second end of the one-way conduction structure, and the second end of the second end interconnection structure is connected to the liner interconnection
Structure；
Wherein, different photoelectric conversion layers is connected to different one-way conduction structures via different first end interconnection structures.
3. imaging sensor according to claim 2, which is characterized in that the one-way conduction structure is PN junction diode,
The first end of the PN junction diode is the area N, and the second end of the PN junction diode is the area P.
4. imaging sensor according to claim 2, which is characterized in that further include:
Pad switch device is located in the semiconductor substrate, and the pad switch device includes liner first end, liner second
End and liner control terminal；
Wherein, the liner interconnection structure includes being connected to the first interconnection structure of liner of the liner first end and being connected to
The second interconnection structure of liner of the liner second end, wherein it is mutual that the first interconnection structure of the liner is connected to the second end
Link structure, the second interconnection structure of the liner is electrically connected to the gasket construction；
The liner control terminal is for controlling the pad switch break-over of device or shutdown.
5. imaging sensor according to claim 4, which is characterized in that the pad switch device is MOS device；
Wherein, the liner first end is the source region of the MOS device, and the liner second end is the drain region of the MOS device,
The liner control terminal is the grid of the MOS device.
6. imaging sensor according to claim 4, which is characterized in that further include:
One end of cushioning conductive structure, the cushioning conductive structure connects the gasket construction, and the other end is connected to the liner
Second interconnection structure.
7. imaging sensor according to claim 2, which is characterized in that further include following one or more: multiple photoelectricity
Conductive structure, one end of each photoelectric conductance structure connect the photoelectric conversion layer, and the other end is connected to the logic mutual connection
Structure, wherein different photoelectric conversion layers is connected to different logic interconnection structures via different photoelectric conductance structures；
One end of multiple unilateal conduction structures, each unilateal conduction structure connects the photoelectric conversion layer, and the other end is connected to institute
State first end interconnection structure, wherein different photoelectric conversion layers is connected to different first via different unilateal conduction structures
Hold interconnection structure.
8. a kind of forming method of imaging sensor characterized by comprising
Semiconductor substrate is provided；
Logical device and one-way conduction structure are formed in the semiconductor substrate；
Metal interconnecting layer is formed on the surface of the semiconductor substrate, is had in the metal interconnecting layer and is let out electric interconnection structure and patrol
Collect interconnection structure；
On the surface of the metal interconnecting layer, form at least three layers of photoelectric conversion layer of stacking, different photoelectric conversion layers via
The logic interconnection structure is electrically connected to different logical devices；
On the surface of at least three layers photoelectric conversion layer of the stacking, gasket construction, at least three layers of photoelectricity of the stacking are formed
Conversion layer is let out electric interconnection structure and one-way conduction structure and is electrically connected with the gasket construction via described.
9. the forming method of imaging sensor according to claim 8, which is characterized in that
The one-way conduction structure has a first end and a second end, and flows through the flow direction quilt of the electronics of the one-way conduction structure
It is limited to from the first end to second end, the electric interconnection structure of letting out includes: liner interconnection structure and pairs of first end
Interconnection structure and second end interconnection structure, the first end of the first end interconnection structure are connected to the of the one-way conduction structure
One end, the second end of the first end interconnection structure are connected to the photoelectric conversion layer, and the first of the second end interconnection structure
End is connected to the second end of the one-way conduction structure, and the second end of the second end interconnection structure is connected to the liner interconnection
Structure；
Wherein, different photoelectric conversion layers is connected to different one-way conduction structures via different first end interconnection structures.
10. the forming method of imaging sensor according to claim 9, which is characterized in that the one-way conduction structure is
PN junction diode, the first end of the PN junction diode are the area N, and the second end of the PN junction diode is the area P.
11. the forming method of imaging sensor according to claim 9, which is characterized in that
Before forming the metal interconnecting layer, further includes:
Pad switch device is formed in the semiconductor substrate, the pad switch device includes liner first end, liner the
Two ends and liner control terminal；
On the surface of the semiconductor substrate, forming metal interconnecting layer includes:
It forms the first interconnection structure of liner for being connected to the liner first end and is connected to the liner of the liner second end
Second interconnection structure；
Wherein, the first interconnection structure of the liner is connected to the second end interconnection structure, the liner the second interconnection structure electricity
It is connected to the gasket construction, the liner control terminal is for controlling the pad switch break-over of device or shutdown.
12. the forming method of imaging sensor according to claim 11, which is characterized in that the pad switch device is
MOS device；
Wherein, the liner first end is the source region of the MOS device, and the liner second end is the drain region of the MOS device,
The liner control terminal is the grid of the MOS device.
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| CN110112056A (en) * | 2019-04-25 | 2019-08-09 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of integrated morphology and thus obtained copper interconnecting line and dielectric material integrated morphology |
| CN112331685A (en) * | 2020-11-20 | 2021-02-05 | 联合微电子中心有限责任公司 | Image sensor and forming method thereof |
| CN113903754A (en) * | 2020-07-06 | 2022-01-07 | 思特威(上海)电子科技股份有限公司 | CMOS image sensor and manufacturing method thereof |
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| CN112331685B (en) * | 2020-11-20 | 2024-02-02 | 联合微电子中心有限责任公司 | Image sensor and method of forming the same |
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