CN109545094A - Display device - Google Patents
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- CN109545094A CN109545094A CN201811395469.4A CN201811395469A CN109545094A CN 109545094 A CN109545094 A CN 109545094A CN 201811395469 A CN201811395469 A CN 201811395469A CN 109545094 A CN109545094 A CN 109545094A
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- conductive
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- light
- display
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- 239000000758 substrate Substances 0.000 claims abstract description 79
- 239000003086 colorant Substances 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 claims 1
- 230000017105 transposition Effects 0.000 description 22
- 238000000034 method Methods 0.000 description 14
- 238000010023 transfer printing Methods 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- -1 Methylsiloxane Chemical class 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 235000021384 green leafy vegetables Nutrition 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920005573 silicon-containing polymer Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
- H05K13/046—Surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
Abstract
The invention discloses a display, which comprises an array substrate, a first pixel unit and a second pixel unit. The array substrate is provided with a plurality of blocks. At least one block comprises a plurality of driving elements, a plurality of first conductive structures and a plurality of second conductive structures which are positioned on the substrate. The thickness from the upper surface of the first conductive structure to the upper surface of the substrate is different from the thickness from the upper surface of the second conductive structure to the upper surface of the substrate. The first pixel unit comprises at least two sub-pixels with different colors. Each sub-pixel has a first micro light emitting diode element. The first micro light-emitting diode element is positioned on the first conductive structure and is electrically connected to the driving element. The second pixel unit comprises at least two sub-pixels with different colors. Each sub-pixel has a second micro light emitting diode element. The second micro light-emitting diode element is positioned on the second conductive structure and is electrically connected to the driving element.
Description
Technical field
The invention relates to a kind of displays, and especially a kind of display about micro- light emitting diode.
Background technique
It, can be by electrostatic suction nozzle or poly- two in general micro- light-emitting diode (micro-LED) transposition technology
Methylsiloxane (Polydimethylsiloxane；The transfer printing heads such as PDMS), by micro- light-emitting diode transposition and are installed
In on substrate.
However, might have the problem of depth of indentation unevenness in above-mentioned transposition technology.It is transferred with dimethyl silicone polymer
For head, there may be contractions during molding, therefore be easy to cause the shrinkage of coining margin and center different, in turn
It is different to generate deformation quantity.Thus after micro- light-emitting diode is installed on substrate, it is likely to result in current distribution not
Uniformly, and then make the brightness irregularities (mura) of display, and cause the reduction of display quality.
Summary of the invention
The present invention provides a kind of display, with preferable display quality and process rate.
Display of the invention includes array substrate, the first pixel unit and the second pixel unit.Array substrate has
Multiple blocks, at least a block include that multiple driving elements, multiple first conductive structures and multiple second conductive structures are set to
The upper surface of one substrate.The upper surface of these the first conductive structures to the first thickness between the upper surface of substrate is different from these
The upper surface of second conductive structure is to the second thickness between the upper surface of substrate.First pixel unit contains at least two difference
The sub-pixel of color.Each sub-pixel has at least one first micro- light-emitting diode.First micro- light-emitting diode configuration
In in the one of these the first conductive structures and one of being electrically connected to these corresponding driving elements.Second pixel unit includes
The sub-pixel of at least two different colours.Each sub-pixel has at least one second micro- light-emitting diode.Second micro- luminous two
Pole pipe element configuration is in the one of these the second conductive structures and one of being electrically connected to these corresponding driving elements.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, special embodiment below, and cooperate institute's accompanying drawings
It is described in detail below.
Detailed description of the invention
Figure 1A to Figure 1B is shown according to a kind of part isometric of the production method of display of the first embodiment of the present invention
It is intended to.
Fig. 1 C to Fig. 1 F is shown according to a kind of cut-away section of the production method of display of the first embodiment of the present invention
It is intended to.
Fig. 1 G to Fig. 1 H is the partial cutaway schematic view according to a kind of display of the first embodiment of the present invention.
Fig. 2A and Fig. 2 B is the partial cutaway schematic view according to a kind of display of the second embodiment of the present invention.
Fig. 3 A and Fig. 3 B are the partial cutaway schematic views according to a kind of display of the third embodiment of the present invention.
Fig. 4 A and Fig. 4 B are the partial cutaway schematic views according to a kind of display of the fourth embodiment of the present invention.
Fig. 5 is the partial cutaway schematic view according to a kind of display of the fifth embodiment of the present invention.
Fig. 6 A to Fig. 6 C is the partial cutaway schematic view according to a kind of display of the sixth embodiment of the present invention.
Wherein, appended drawing reference:
10,20,30,40,50,60: display
11: transfer printing head
100,200,300,400,500,600: array substrate
110: substrate
110P: center
110a, 130a, 630a, 140a, 640a, 530a: upper surface
120: pel array layer
121: driving element
122,432,442: insulating layer
123,232,332,242,342: conductive layer
130,230,330,430: the first conductive structure
130h, 650h1: first thickness
131,141: conductive module
140,240,340,440: the second conductive structure
140h, 650h2: second thickness
530: conductive structure
540: conductive column
540b: side wall
650: altimetric compensation structure
650a, 650a1,650a2: top surface
651: opposing projections
652: opposing recesses portion
160: the first micro- light-emitting diodes
170: the second micro- light-emitting diodes
160R, 170R: red micro- light-emitting diode
160G, 170G: the micro- light-emitting diode of green
160B, 170B: the micro- light-emitting diode of blue
180,580: conductive adhesion layer
191: the first conductive layers
192: the first semiconductor layers
193: luminescent layer
194: the second semiconductor layers
195: the second conductive layers
PU: pixel unit
PU1: the first pixel unit
PU2: the second pixel unit
SP1, SP2: sub-pixel
Z1, Z2, Z3, Z4, Z5, Z6, Z7, Z8, Z9: block
R1, R2, R3, R4: region
D1: the first extending direction
D2: the second extending direction
X, Y, Z: direction
GE: grid
S: source electrode
D: drain electrode
CH: semiconductor layer
GI: gate insulating layer
630,640: soldered ball
Specific embodiment
Referring to the schema of the present embodiment more fully to illustrate the present invention.However, the present invention also can be with a variety of different shapes
Formula embodies, and should not necessarily be limited by embodiments described herein.The thickness of layer and region in schema can for the sake of clarity be put
Greatly.The same or similar reference number indicates the same or similar element, and following paragraphs will be repeated no longer one by one.
Figure 1A to Figure 1B is shown according to a kind of part isometric of the production method of display of the first embodiment of the present invention
It is intended to.Fig. 1 C to Fig. 1 H is illustrated according to a kind of cut-away section of the production method of display of the first embodiment of the present invention
Figure.Specifically, Figure 1B is the enlarged drawing of block Z5 in Figure 1A, Fig. 1 G is the enlarged drawing of region R1 in Fig. 1 F, and Fig. 1 H is Fig. 1 F
The enlarged drawing of middle region R2.
Referring to Figure 1A to Fig. 1 C.As shown in Figure 1A, array basal plate 100 is provided.Also, such as Figure 1A and Fig. 1 C institute
Show, such as can be by board and/or other suitable transposition boards with transfer printing head (print head) 11, with transfer
And/or other suitable modes, and by micro- light-emitting component 160R, 170R transposition of multiple red in array substrate 100.Transfer printing head
11 for example, dimethyl silicone polymer transfer printing head or other suitable elastic transfer printing heads (elastomer print head), but sheet
It invents without being limited thereto.By flexible transfer printing head 11, the cushion space in transposition processing procedure can be promoted.Therefore, transposition system
The processing procedure degree of desire (process window) of journey can also be elevated.
Array substrate 100 includes substrate 110, pel array layer 120 and multiple conductive structures 130,140.Substrate 110
Material can be glass, quartz, organic polymer, metal or other suitable materials.Pel array layer 120 and conductive structure
130,140 are located on the upper surface 110a of substrate 110.Pel array layer 120 includes that multiple driving elements 121 (are illustrated in Fig. 1 G
Or Fig. 1 H), and conductive structure 130,140 is electrically connected to corresponding driving element 121 in pel array layer 120.And related picture
Driving element 121 in pixel array layer 120 will elaborate in subsequent paragraph.
Array substrate 100 can be divided into one or more block Z1, Z2 corresponding to transfer printing head 11, Z3, Z4, Z5, Z6,
Z7, Z8, Z9 (i.e. Z1~Z9).In other words, the appearance and size of block Z1~Z9 can be according to the ruler of corresponding transfer printing head 11
It is very little and be adjusted.With in embodiment depicted in Figure 1A, array substrate 100 has multiple block Z1~Z9, but the present invention is not
It is limited to this.In other embodiments, array substrate 100 can also only have a block.If array substrate 100 has multiple areas
Block Z1~Z9, then the appearance and size of these blocks Z1~Z9 can be the same or different from each other, and the pixel in block Z1~Z9
Wiring (layout) configuration of array layer 120 can be adjusted according to the function of each block Z1~Z9 or position, Yu Benfa
It is bright and without restriction.
It as shown in Figure 1B, on the upper surface 110a of substrate 110 include multiple first conductive by taking the block Z5 in Figure 1A as an example
Structure 130 and multiple second conductive structures 140.The upper surface 130a of first conductive structure 130 is to the upper surface of substrate 110
There is first thickness 130h (being illustrated in Fig. 1 G) between 110a, the upper surface 140a's of the second conductive structure 140 to substrate 110 is upper
There is second thickness 140h (being illustrated in Fig. 1 H) between the 110a of surface, and first thickness 130h is greater than second thickness 140h.At this
In embodiment, the difference of first thickness 130h and second thickness 140h are more than or equal to 1 micron of (micrometer；μm) and be less than etc.
In 5 microns, be suitable for micro- light-emitting diode (: first micro- light-emitting diode 160 and second as described in subsequent is micro-
Light-emitting diode 170) transposition during, can correspond to the deformation quantity of transfer printing head 11, and compensate or reduce transfer printing head
Influence caused by 11 deformation.
As shown in Fig. 1 G and Fig. 1 H, in the present embodiment, the first conductive structure 130 can have conductive module 131, and second
Conductive structure 140 can have conductive module 141.The thickness for forming the conductive module 131 of the first conductive structure 130 is greater than composition
The thickness of the conductive module 141 of second conductive structure 140.Conductive module 131,141 is, for example, conductive column (conductive
Pillar), however, the present invention is not limited thereto.In some embodiments, conductive module 131,141 with different thickness can be by
Multiple film forming, exposure development and the multiple film layer stack manner of etching of different numbers are formed, or by half mode light shield (Half
Tone Mask；HTM it) is formed with multiple etching mode, in the present invention is not limited thereto.
B refering to fig. 1 please be connect, in some embodiments, multiple conductive structures 130,140 can separately constitute multiple groups,
It is configured on substrate, such as the conductive structure per N number of same thickness forms one group of continuous arrangement, N is just whole more than or equal to 2
Number, according to the display pixel design requirement of display, a plurality of light-emitting elements of same pixel unit are set to the one of same thickness
On group conductive structure.In the present embodiment, such as every three the first conductive structures 130 are one group and every three second conductive knots
Structure 140 is one group, is suitable for micro- light-emitting diode of transposition different colours thereon.In addition, in the present embodiment, thickness
Lesser second conductive structure 140 is positioned adjacent to the position of the center 110P of the block Z5 of substrate 110, and thickness biggish
One conductive structure 130 is set to center 110P outwardly extending position of the substrate 110 from block Z5, however, the present invention is not limited thereto.
In other words, the smallest conductive structure of thickness is set to the position of the center 110P of the block Z5 of substrate 110, according to conductive structure
Thickness it is cumulative and configured to outer rim, the maximum conductive structure of thickness is then set to the position of the outer most edge of the block Z5 of substrate 110
It sets.
In the present embodiment, extend on the direction D1 one first, any group of the second conductive structure 140 is configured at two group first
Between conductive structure 130.For example, it in Figure 1B, is parallel on the section of XZ plane one, at least one in X-direction
The second conductive structure 140 of group is configured between the first conductive structure of at least two groups 130.In addition, if array substrate 100 is with multiple
Block Z1~Z9 extends on the direction D2 one perpendicular to the second of the first extending direction D1, at least one set of second conductive structure 140
It is configured between the first conductive structure of at least two groups 130.For example, referring to Figure 1A and Figure 1B, YZ is parallel to one
On the section of plane, the first conductive structure of at least two groups 130 is configured in the second conductive structure of at least one set 140 in Y-direction
Between.Also, if array substrate 100 has multiple blocks, and the configuration mode of the conductive structure can be alternately present.
In the present embodiment, in single a block (such as: block Z5), all first conductive structures 130 may be constructed one
Encircled area with maximum area, and the second conductive structure 140 can be located in encircled area above-mentioned (that is, first is conductive
Structure 130 can be in a manner of enclosed around the second conductive structure 140), however, the present invention is not limited thereto.In other embodiments
In, in single a block, the altimetric compensation of array substrate 100 can be one direction (that is, along a direction increasing or decreasing),
Such as transposition process is carried out by electrostatic suction nozzle.
Then, please refer to Fig. 1 C, by micro- light-emitting component 160R, 170R transposition of multiple red in array substrate 100 it
It afterwards, can be by similar mode, by micro- light-emitting component 160G, 170G transposition of multiple greens in array substrate 100.
Then, please refer to Fig. 1 D, by micro- light-emitting component 160G, 170G transposition of multiple greens in array substrate 100 it
It afterwards, can be by similar mode, by micro- light-emitting component 160B, 170B transposition of multiple blues in array substrate 100.
It is worth noting that, the present invention does not limit, red micro- light-emitting component 160R, 170R, the micro- light-emitting component of green
The transposition sequence of 160G, 170G and blue micro- light-emitting component 160B, 170B.
The production of the display 10 of the present embodiment can be substantially completed after above-mentioned transposition processing procedure.Referring to figure
1F to Fig. 1 H, display 10 include array substrate 100, the first pixel unit PU1 and the second pixel unit PU2.
Array substrate 100 includes substrate 110, pel array layer 120 and multiple conductive structures 130,140.Such as Fig. 1 G and
Shown in Fig. 1 H, pel array layer 120 has multiple driving elements 121.Each driving element 121 has corresponding grid G E, source
Pole S, drain D, semiconductor layer CH and gate insulating layer GI.Gate insulating layer GI is between grid G E and semiconductor layer CH.And
And pel array layer 120 can be with more the insulating layer 122 and conductive layer 123 being covered in driving element 121.Conductive layer 123
Insulating layer 122 can be covered in and through insulating layer 122 so that the conductive structure 130,140 on conductive layer 123 can with it is corresponding
Driving element 121 be electrically connected.
In the present embodiment, driving element 121 is, for example, thin film transistor (TFT) (thin film transistor；TFT), scheme
Driving element 121 in 1B is the i.e. grid G E by taking thin film transistor (TFT) can be for bottom grid transistor npn npn (bottom gate) as an example
Positioned at the lower section of semiconductor layer CH.In other embodiments, thin film transistor (TFT) can be top grid type (top gate), i.e. grid
Positioned at the top of semiconductor layer or the transistor of other appropriate patterns, however, the present invention is not limited thereto.In other embodiments, it drives
Dynamic element 121 is also possible to the switch element (switching device) of other kenels.
First pixel unit PU1 includes at least the sub-pixel SP1, each sub-pixel SP1 of two different colours at least
One first micro- light-emitting diode 160, and first micro- light-emitting diode 160 is configured at corresponding first conductive structure
On 130, so that first micro- light-emitting diode 160 is electrically connected to driving element by corresponding first conductive structure 130
121 drain D.
In the present embodiment, first micro- light-emitting diode 160 includes red micro- light-emitting diode 160R, green
The micro- light-emitting diode 160G or micro- light-emitting diode 160B of blue, however, the present invention is not limited thereto.
In the present embodiment, the micro- light-emitting diode 160R of red in first micro- light-emitting diode 160, green
The micro- light-emitting diode 160G and micro- light-emitting diode 160B of blue is to be located to have mutually level first to lead
In electric structure 130.
Second pixel unit PU2 includes at least the sub-pixel SP2, each sub-pixel SP2 of two different colours at least
One second micro- light-emitting diode 170, and second micro- light-emitting diode 170 is configured at corresponding second conductive structure
On 140, so that second micro- light-emitting diode 170 is electrically connected to driving element by corresponding second conductive structure 140
121 drain D.
In the present embodiment, second micro- light-emitting diode 170 includes red micro- light-emitting diode 170R, green
The micro- light-emitting diode 170G or micro- light-emitting diode 170B of blue, however, the present invention is not limited thereto.
In the present embodiment, due in second micro- light-emitting diode 170 the micro- light-emitting diode 170R of red,
The micro- light-emitting diode 170G of the green and micro- light-emitting diode 170B of blue is to be located to have mutually level the
On two conductive structures 140.Also, the height of the micro- light-emitting diode 160R of red in first micro- light-emitting diode 160
Degree is different from the height of the micro- light-emitting diode 170R of red in second micro- light-emitting diode 170, and first is micro- luminous
The height of the micro- light-emitting diode 160G of green in diode element 160 is different from second micro- light-emitting diode 170
In the micro- light-emitting diode 170G of green height, and blue in first micro- light-emitting diode 160 is micro- shines two
The height of pole pipe element 160B is different from the micro- light-emitting diode 170B's of blue in second micro- light-emitting diode 170
Highly.
In the present embodiment, the is configured at due to constituting first micro- light-emitting diode 160 of the first pixel unit PU1
On one conductive structure 130, and the second micro- light-emitting diode 170 for constituting the second pixel unit PU2 is configured at the second conduction
In structure 140.Therefore, the second pixel unit PU2 can be located at the position of the center 110P of the block Z5 of adjacent substrates 110, and
First pixel unit PU1 can be located at substrate 110 from the outwardly extending position center 110P.In addition, if array substrate 100 has
Multiple block Z1~Z9, then on the first extending direction D1 or the second extending direction D2, the first pixel unit PU1 and the second pixel
Unit PU2 can be alternately arranged.
For example, it referring to Figure 1A and Figure 1B, is parallel on the section of YZ plane one, in appointing in Y-direction
One group of second conductive structure 140 (such as: any group of the second conductive structure 140 in block Z2, block Z5 and block Z8) configuration
(such as: farthest away from the two of block center 110P in block Z2, block Z5 and block Z8 in the first conductive structure of at least two groups 130
The first conductive structure 130 of group) between.If also, array substrate 100 has multiple blocks, on the second extending direction, the first picture
Plain unit PU1 can be alternately arranged with the second pixel unit PU2.
Fig. 1 G and Fig. 1 H is please referred to, in the present embodiment, micro- light-emitting diode 160,170 is, for example, to have first to lead
Electric layer 191, the first semiconductor layer 192, luminescent layer 193, the second semiconductor layer 194 and the second conductive layer 195 it is rectilinear
(vertical type) light emitting diode, however, the present invention is not limited thereto.In other embodiments, first micro- light emitting diode member
Part 160 and second micro- light-emitting diode 170 or crystal covering type (flip-chip type) light emitting diode.The first half
Conductor layer 192, luminescent layer 193 and the second semiconductor layer 194 for example can be by organometallic vapor deposition method (Metal-
organic Chemical Vapor Deposition；MOCVD the nitridation with or without doping (doping)) is formed
Indium gallium (InGaN) layer and/or gallium nitride (GaN) layer, the first conductive layer 191 and the second conductive layer 195 for example can be by
Physical vaporous deposition (Physical Vapor Deposition；PVD metal or metal oxide layer) are formed by.By
The doping of various concentration or type can make micro- light-emitting diode 160,170 have different luminescent colors.
In the present embodiment, between first micro- light-emitting diode 160 and the first conductive structure 130 and second micro- hair
There is conductive adhesion layer 180 between optical diode element 170 and the second conductive structure 140.The material of conductive adhesion layer 180 is for example
For solder, and for example micro- two can be shone to be promoted by conductive adhesion layer 180 by back welding process (reflow process)
Electric conductivity between pole pipe element 160,170 and conductive structure 130,140.
Based on above-mentioned, in the display 10 of the present embodiment, conductive module 131 is different from the thickness of conductive module 141, because
This, the second conductive structure 140 that the first conductive structure 130 that conductive module 131 is constituted is constituted with conductive module 141 can be with
With different correspondence thickness.And thickness difference caused by different thickness above-mentioned can micro- light-emitting diode 160,
During 170 transposition, influence caused by the deformation of transfer apparatus can be compensated or be reduced, and micro- light emitting diode can be made
Current distribution between element 160,170 and array substrate 100 is more uniform, and then keeps the brightness of display more uniform, and
Promote display quality.
Fig. 2A and Fig. 2 B is the partial cutaway schematic view according to a kind of display of the second embodiment of the present invention.It is specific and
Speech, the display 20 of the present embodiment includes array substrate 200, the first pixel unit PU1 and the second pixel unit PU2, and is schemed
2A is one of them 230 diagrammatic cross-section of the first conductive structure of the first pixel unit PU1 and array substrate 200, and Fig. 2 B is
One of them 240 diagrammatic cross-section of the second conductive structure of two pixel unit PU2 and array substrate 200.
Please refer to Fig. 1 G, Fig. 1 H, Fig. 2A and Fig. 2 B, in the present embodiment, the first conductive structure 230 include conductive layer 123,
232 and insulating layer 122, conductive layer 123 be covered on insulating layer 122, and insulating layer 122 is covered on conductive layer 232.Second leads
Electric structure 240 includes conductive layer 123,242 and insulating layer 122, and conductive layer 123 is covered on insulating layer 122, and insulating layer 122
It is covered on conductive layer 242.The thickness of the conductive layer 232 of first conductive structure 230 is greater than the conductive layer of the second conductive structure 240
242 thickness, the thickness of the insulating layer 122 of the first conductive structure 230 are identical to the insulating layer 122 of the second conductive structure 240
Thickness, and the thickness of the conductive layer 123 of the first conductive structure 230 is identical to the thickness of the conductive layer 123 of the second conductive structure 240
Degree.
In the present embodiment, conductive layer 232,242 can be identical film layer.In other words, conductive layer 232,242 is constituted
Film layer can have multiple protrusions, and there is inconsistent thickness.
In the present embodiment, conductive layer 232,242 can be the film layer in driving element 121.For example, in this reality
It applies in example, the conductive layer 232,242 for constituting conductive structure can be grid G E in driving element 121, however, the present invention is not limited thereto.
In other embodiments, the conductive layer 232,242 for constituting conductive structure can be source S and/or drain D in driving element 121.
Based on above-mentioned, in the display 20 of the present embodiment, conductive layer 232 is different from the thickness of conductive layer 242, therefore,
Conductive layer 232 the first conductive structure 230 constituted and the second conductive structure 240 that conductive layer 242 is constituted can have not
Same correspondence thickness.And thickness difference caused by different thickness above-mentioned can be in micro- light-emitting diode 160,170
During transposition, influence caused by the deformation of transfer apparatus can be compensated or be reduced, and micro- light-emitting diode can be made
160, the current distribution between 170 and array substrate 200 is more uniform, and then keeps the brightness of display more uniform, and is promoted
Display quality.
Fig. 3 A and Fig. 3 B are the partial cutaway schematic views according to a kind of display of the third embodiment of the present invention.It is specific and
Speech, the display 30 of the present embodiment includes array substrate 300, the first pixel unit PU1 and the second pixel unit PU2, and is schemed
3A is one of them 330 diagrammatic cross-section of the first conductive structure of the first pixel unit PU1 and array substrate 300, and Fig. 3 B is
One of them 340 diagrammatic cross-section of the second conductive structure of two pixel unit PU2 and array substrate 300.
Fig. 1 G Fig. 1 H and Fig. 3 A and Fig. 3 B are please referred to, in the present embodiment, conductive layer 332 can be covered in insulating layer 122
Above and run through insulating layer 122, conductive layer 342 can be covered on insulating layer 122 and through insulating layer 122.
First conductive structure 330 includes at least conductive layer 332.Second conductive structure 340 includes at least conductive layer 342.The
The thickness of the conductive layer 332 of one conductive structure 330 is greater than the thickness of the conductive layer 342 of the second conductive structure 340.
Based on above-mentioned, in the display 30 of the present embodiment, conductive layer 332 is different from the thickness of conductive layer 342, therefore,
Conductive layer 332 the first conductive structure 330 constituted and the second conductive structure 340 that conductive layer 342 is constituted can have not
Same correspondence thickness.And thickness difference caused by different thickness above-mentioned can be in micro- light-emitting diode 160,170
During transposition, influence caused by the deformation of transfer apparatus can be compensated or be reduced, and micro- light-emitting diode can be made
160, the current distribution between 170 and array substrate 300 is more uniform, and then keeps the brightness of display more uniform, and is promoted
Display quality.
Fig. 4 A and Fig. 4 B are the partial cutaway schematic views according to a kind of display of the fourth embodiment of the present invention.It is specific and
Speech, the display 40 of the present embodiment includes array substrate 400, the first pixel unit PU1 and the second pixel unit PU2, and is schemed
4A is one of them 430 diagrammatic cross-section of the first conductive structure of the first pixel unit PU1 and array substrate 400, and Fig. 4 B is
One of them 440 diagrammatic cross-section of the second conductive structure of two pixel unit PU2 and array substrate 400.
Fig. 1 G and Fig. 1 H and Fig. 4 A and Fig. 4 B are please referred to, in the present embodiment, insulating layer 432 and the covering pair of insulating layer 442
The driving element 121 answered, and conductive layer 123 can cover and through corresponding insulating layer 432,442.
In the present embodiment, the first conductive structure 430 includes conductive layer 123 and insulating layer 432, and conductive layer 123 covers
In on insulating layer 432.Second conductive structure 440 includes conductive layer 123 and insulating layer 442, and conductive layer 123 is covered in insulating layer
On 442.The thickness of the insulating layer 432 of first conductive structure 430 is greater than the thickness of the insulating layer 442 of the second conductive structure 440, and
The thickness of the conductive layer 123 of first conductive structure 430 is identical to the thickness of the conductive layer 123 of the second conductive structure 440.
In the present embodiment, insulating layer 432,442 can be identical film layer.In other words, insulating layer 432,442 is constituted
Film layer can have multiple protrusions, and there is inconsistent thickness.
Based on above-mentioned, in the display 40 of the present embodiment, insulating layer 432 is different from the thickness of insulating layer 442, therefore,
Insulating layer 432 the first conductive structure 430 constituted and the second conductive structure 440 that insulating layer 442 is constituted can have not
Same correspondence thickness.And thickness difference caused by different thickness above-mentioned can be in micro- light-emitting diode 160,170
During transposition, influence caused by the deformation of transfer apparatus can be compensated or be reduced, and micro- light-emitting diode can be made
160, the current distribution between 170 and array substrate 400 is more uniform, and then keeps the brightness of display more uniform, and is promoted
Display quality.
Fig. 5 is the partial cutaway schematic view according to a kind of display of the fifth embodiment of the present invention.Specifically, this reality
The display 50 for applying example includes array substrate 500 and multiple pixel unit PU, and Fig. 5 is one of pixel unit PU and battle array
530 diagrammatic cross-section of one of conductive structure of column substrate 500.
Fig. 1 G, Fig. 1 H and Fig. 5 are please referred to, in the present embodiment, the material of conductive adhesion layer 580 is, for example, solder, and example
It such as can be by back welding process, to be promoted between micro- light-emitting diode and conductive structure 530 by conductive adhesion layer 580
Electric conductivity.
In the present embodiment, conductive structure 530 for example may include conductive column (conductive pillar) 540.It is conductive
Column 540 is located on conductive layer 123, and conductive column 540 can have different height according to the demand in design.
In addition, even if conductive adhesion layer 580 is excessive in the usage amount of manufacturing process, or in back welding process it is excessive molten
Melt, and overflow the upper surface 530a of conductive structure 530, conductive adhesion layer 580 can also be made to cover by the conductive structure 530 of protrusion
It is placed on the partial sidewall (such as: the partial sidewall 540b of conductive column 540) of conductive structure 530, to avoid conductive adhesion layer 580 and its
His conductive member/film layer/element generates not expected be electrically connected.
Fig. 6 A to Fig. 6 C is the partial cutaway schematic view according to a kind of display of the sixth embodiment of the present invention.It is specific and
Speech, Fig. 6 B is the enlarged drawing of region R3 in Fig. 6 A, and Fig. 6 C is the enlarged drawing of region R4 in Fig. 6 A.
Fig. 1 F to Fig. 1 H and Fig. 6 A to Fig. 6 C are please referred to, in the array substrate 600 and first of the display 60 of the present embodiment
The array substrate 100 of the display 10 of embodiment is similar, and difference is: array substrate 600 includes the altimetric compensation structure of insulation
650.The top surface 650a of altimetric compensation structure 650 is a continuous concave surface, and the first conductive structure 630 and the second conductive structure
640 are located on top surface 650a.
In the present embodiment, altimetric compensation structure 650 has opposing projections 651 relative to each other and opposing recesses portion
652, positioned at opposing projections 651 top surface 650a1 between the upper surface 110a of substrate 110 have first thickness 650h1,
Top surface 650a2 positioned at opposing recesses portion 652 is to having second thickness 650h2, and the between the upper surface 110a of substrate 110
One thickness 650h1 is greater than second thickness 650h2.In this way, which the upper surface 630a of the first conductive structure 630 can be made to substrate
Height between 110 upper surface 110a is greater than the upper surface 640a of the second conductive structure 640 to the upper surface 110a of substrate 110
Between height.
It also may include soldered ball in the first conductive structure 630 and the second conductive structure 640 in other alternate embodiments, but
The invention is not limited thereto.
Based on above-mentioned, in the display 60 of this alternate embodiment, the thickness of opposing projections 651 and opposing recesses portion 652
Degree is different, and the soldered ball being located on opposing projections 651 can also have not with the soldered ball 640 being located in opposing recesses portion 652
Same respective heights, thus form the first conductive structure 630 and the second conductive structure 640.And different height above-mentioned is produced
Raw difference in height can compensate or reduce transfer apparatus during the transposition of micro- light-emitting diode 160,170
Influence caused by deformation, and can make current distribution between micro- light-emitting diode 160,170 and array substrate 600 compared with
To be uniform, and then keep the brightness of display more uniform, and promotes display quality.
In conclusion array substrate is in the part of the first conductive structure and the second conductive structure in display of the invention
With different correspondence thickness/heights, the generation type of different height can be any of above-described embodiment or be used in mixed way, and
Thickness difference/difference in height caused by different thickness/height above-mentioned, which can correspond to transfer printing head or printing process, can produce
Deformation quantity.Therefore, during the transposition of micro- light-emitting diode, it can compensate or reduce caused by the deformation of transfer printing head
Influence, and the current distribution between micro- light-emitting diode and array substrate can be made more uniform, and then make display
Brightness it is more uniform, and promote display quality and process rate.
Although the present invention has been disclosed by way of example above, it is not intended to limit the present invention., any technical field
Middle tool usually intellectual, without departing from the spirit and scope of the present invention, when can make some changes and embellishment, thus it is of the invention
Protection scope should be defined by the scope of the appended claims.
Claims (20)
1. a kind of display characterized by comprising
Array basal plate, has multiple blocks, and at least one block includes multiple driving elements, multiple first conductive structures and more
A second conductive structure is set to the upper surface of a substrate, on this of the wherein upper surface of those the first conductive structures to the substrate
A first thickness between surface is different from the upper surfaces of those the second conductive structures to one between the upper surface of the substrate
Second thickness；
One first pixel unit, contains at least two the sub-pixel of different colours, and respectively the sub-pixel has at least one first micro- hair
Optical diode element, wherein first micro- light-emitting diode is configured in the one of those the first conductive structures and electrically connects
It is connected to one of those corresponding driving elements；And
One second pixel unit, contains at least two the sub-pixel of different colours, and respectively the sub-pixel has at least one second micro- hair
Optical diode element, wherein second micro- light-emitting diode is configured in the one of those the second conductive structures and electrically connects
It is connected to one of those corresponding driving elements.
2. display as described in claim 1, which is characterized in that those first micro- light emitting diodes of first pixel unit
Element is red micro- light-emitting diode, the micro- light-emitting diode of green or the micro- light-emitting diode of blue.
3. display as claimed in claim 2, which is characterized in that those second micro- light emitting diodes of second pixel unit
Element is red micro- light-emitting diode, the micro- light-emitting diode of green or the micro- light-emitting diode of blue.
4. display as described in claim 1, which is characterized in that the first thickness is greater than the second thickness.
5. display as claimed in claim 4, which is characterized in that second pixel unit is positioned adjacent to the area of the substrate
One center of block, first pixel unit are set to the substrate from the position extended centrally out.
6. display as claimed in claim 4, which is characterized in that those first conductive structures and those second conductive structures point
Not Ju You multiple groups, each group includes N number of first conductive structure or N number of second conductive structure, and wherein Wei≤2 N are being just
Integer, on one first extending direction, any group of those the second conductive structure is configured at those first conductive structures of at least two groups
Between.
7. display as claimed in claim 6, which is characterized in that on one second extending direction, any group those second lead
Electric structure, which is configured at, appoints between those first conductive structures of at least two groups, and this second extends perpendicularly to the first extension side
To.
8. display as claimed in claim 6, which is characterized in that the quantity of those the first pixel units be it is multiple, this second
The quantity of pixel unit be it is multiple, and those first pixel units and those second pixel units on first extending direction according to
It arranges according to the respectively block and is alternately arranged on the substrate.
9. display as claimed in claim 8, which is characterized in that those first pixel units and those second pixel units in
It arranges on second extending direction according to the respectively block and is alternately arranged on the substrate.
10. display as claimed in claim 4, which is characterized in that those first conductive structures are around those the second conductive knots
Structure setting.
11. display as described in claim 1, which is characterized in that those first micro- light-emitting diodes and those second
Micro- light-emitting diode is vertical LED or crystal-coated light-emitting diodes.
12. display as described in claim 1, which is characterized in that first pixel unit and second pixel unit are distinguished
With the identical first micro- light-emitting diode of multiple luminous frequency spectrums and second micro- light-emitting diode.
13. display as described in claim 1, which is characterized in that those first conductive structures and those second conductive structures
It is respectively provided with a conductive module, and this of the thickness of the conductive module of those the first conductive structures and those the second conductive structures
The thickness of conductive module is different.
14. display as described in claim 1, which is characterized in that those first conductive structures and those second conductive structures
Including a conductive layer and an insulating layer, which is set to the top of the insulating layer, and this of those the first conductive structures is led
The thickness of electric layer is identical as the thickness of the conductive layer of those the second conductive structures, the insulating layer of those the first conductive structures
Thickness is different from the thickness of the insulating layer of those the second conductive structures.
15. display as claimed in claim 14, which is characterized in that those driving elements are multiple thin film transistor (TFT)s, those
The corresponding conductive layer is electrically connected in thin film transistor (TFT).
16. display as described in claim 1, which is characterized in that the array substrate includes an at least conductive layer and at least one
Insulating layer, the conductive layer or the insulating layer have multiple first projective structures and multiple second projective structures, those first are led
Electric structure includes those first projective structures, those second conductive structures include those second projective structures, and those are first convex
The thickness of structure is different from the thickness of those the second projective structures out.
17. display as described in claim 1, which is characterized in that first micro- light-emitting diode and first conduction
A conductive adhesion layer is respectively provided between structure and between second micro- light-emitting diode and second conductive structure.
18. display as described in claim 1, which is characterized in that the difference of the first thickness and the second thickness is greater than etc.
In 1 micron and it is less than or equal to 5 microns.
19. display as described in claim 1, which is characterized in that the array substrate includes an altimetric compensation structure, the height
One top surface of collocation structure is a continuous concave surface, and those first conductive structures and those second conductive structures are located at the top table
On face.
20. display as claimed in claim 19, which is characterized in that those second conductive structures are located at the one of the continuous concave surface
Opposing recesses portion, those first conductive structures are located at an opposing projections of the continuous concave surface.
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| TW107133998 | 2018-09-27 | ||
| TW107133998A TWI676980B (en) | 2018-09-27 | 2018-09-27 | Display |
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| CN109545094B CN109545094B (en) | 2020-12-08 |
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| TWI676980B (en) | 2019-11-11 |
| CN109545094B (en) | 2020-12-08 |
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