CN109534694A - A kind of decoating liquid and technique stripping the monomer silicon on 3D glass outside the region logo - Google Patents
A kind of decoating liquid and technique stripping the monomer silicon on 3D glass outside the region logo Download PDFInfo
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- CN109534694A CN109534694A CN201811488819.1A CN201811488819A CN109534694A CN 109534694 A CN109534694 A CN 109534694A CN 201811488819 A CN201811488819 A CN 201811488819A CN 109534694 A CN109534694 A CN 109534694A
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- decoating liquid
- strip
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0075—Cleaning of glass
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- Chemical Kinetics & Catalysis (AREA)
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Abstract
The present invention provides the decoating liquids and technique of the monomer silicon outside the region logo on a kind of stripping 3D glass, decoating liquid is based on mass fraction, it is composed of the following components: sodium hypochlorite 15~20%, phenylpropyl triazole 0.5~1%, sodium sulfate of polyethenoxy ether of fatty alcohol 2~4%, alkaline matter 0.5~1%, complexing agent 1~3%, glycerol 10~15%, dispersing agent 10~15%, surplus are water.Decoating liquid neutral and alkali substance provided by the invention and monomer pasc reaction, then make monomer silicon strip under the collective effect of sodium hypochlorite, phenylpropyl triazole, sodium sulfate of polyethenoxy ether of fatty alcohol, complexing agent, glycerol and dispersing agent, strip yield with higher；Plating object is held to avoid being corroded.The results showed that the strip yield of decoating liquid is 89%~96%.
Description
Technical field
The invention belongs to the monomer silicon outside the region logo on the cleaning field of 3D glass more particularly to a kind of stripping 3D glass
Decoating liquid and technique.
Background technique
The glass that digital product uses at this stage is divided into 2D glass, 2.5D glass and 3D glass.With the development of the society, 3D
Glass makes rapid progress in the utilization of electronics industry, also higher and higher to cleaning, the requirement of strip of 3D glass.
Monomer silicon, silk-screen logo, the then electroplated layer of strip logo redundance are electroplated on 3D glass.However current
Decoating liquid will appear strip not exclusively or hold the problems such as plating object is corroded, and strip yield is lower.
Summary of the invention
In view of this, the purpose of the present invention is to provide the strips of the monomer silicon outside the region logo on a kind of stripping 3D glass
Liquid and technique, decoating liquid strip yield with higher.
The present invention provides the decoating liquids of the monomer silicon outside the region logo on a kind of stripping 3D glass, based on mass fraction,
It is composed of the following components:
Sodium hypochlorite 15~20%, phenylpropyl triazole 0.5~1%, sodium sulfate of polyethenoxy ether of fatty alcohol 2~4%, alkalinity
Substance 0.5~1%, complexing agent 1~3%, glycerol 10~15%, dispersing agent 10~15%, surplus are water.
Preferably, the alkaline matter is selected from NaOH and/or KOH；
The complexing agent is selected from one of tetrasodium ethylenediamine tetraacetate, sodium versenate and sodium citrate or more
Kind；
The dispersing agent is selected from one of potassium carbonate, sodium carbonate and sodium bicarbonate or a variety of.
Preferably, the content of sodium hypochlorite is 15%, 18% or 20% in the decoating liquid.
Preferably, the content of glycerol is 10%, 13% or 15% in the decoating liquid.
Preferably, the content of dispersing agent is 10%, 13% or 15% in the decoating liquid.
The present invention provides the techniques of the monomer silicon outside the region logo on a kind of stripping 3D glass, comprising the following steps:
3D glass sample to be processed is placed in strip in decoating liquid described in above-mentioned technical proposal, is dried after washing.
Preferably, the temperature of the strip is 10~35 DEG C；The time of strip is 15~20min.
Preferably, the temperature of the washing is 60~65 DEG C；The time of washing is 3~5min.
Preferably, the washing carries out under conditions of ultrasound；The frequency of the ultrasound is 40Hz；The electric current of ultrasound is 2
~5A.
Preferably, the thickness of monomer silicon to be stripped on the 3D glass sample to be processed is more than or equal to 600nm.
The present invention provides the decoating liquids of the monomer silicon outside the region logo on a kind of stripping 3D glass, based on mass fraction,
It is composed of the following components: sodium hypochlorite 15~20%, phenylpropyl triazole 0.5~1%, sodium sulfate of polyethenoxy ether of fatty alcohol 2~
4%, alkaline matter 0.5~1%, complexing agent 1~3%, glycerol 10~15%, dispersing agent 10~15%, surplus is water.The present invention
The decoating liquid neutral and alkali substance and monomer pasc reaction of offer, then in sodium hypochlorite, phenylpropyl triazole, fatty alcohol polyoxyethylene ether sulphur
Sour sodium, complexing agent, glycerol and dispersing agent collective effect under make monomer silicon strip, strip yield with higher；Hold plating object
It avoids being corroded.The results showed that the strip yield of decoating liquid is 89%~96%.
Specific embodiment
The present invention provides the decoating liquids of the monomer silicon outside the region logo on a kind of stripping 3D glass, based on mass fraction,
It is composed of the following components:
Sodium hypochlorite 15~20%, phenylpropyl triazole 0.5~1%, sodium sulfate of polyethenoxy ether of fatty alcohol 2~4%, alkalinity
Substance 0.5~1%, complexing agent 1~3%, glycerol 10~15%, dispersing agent 10~15%, surplus are water.
Decoating liquid neutral and alkali substance provided by the invention and monomer pasc reaction, then in sodium hypochlorite, phenylpropyl triazole, fat
Alcohol polyethenoxy ether sodium sulfate, complexing agent, glycerol and dispersing agent collective effect under make monomer silicon strip, it is with higher to move back
Plate yield；Plating object is held to avoid being corroded.
In the present invention, as a kind of alkaline oxidiser, main function is to provide under alkaline condition the sodium hypochlorite
Oxidation and osmosis make to take off plating efficiency and yield are higher.The phenylpropyl triazole is able to suppress as corrosion inhibiter and holds plating object
Corrosion.The sodium sulfate of polyethenoxy ether of fatty alcohol (AES) is used as bleeding agent, can increase surface tension.
The alkaline matter is preferably selected from NaOH and/or KOH；- OH in alkaline matter can be with monomer pasc reaction.
The complexing agent is preferably selected from one of tetrasodium ethylenediamine tetraacetate, sodium versenate and sodium citrate
Or it is a variety of；
The dispersing agent is preferably selected from one of potassium carbonate, sodium carbonate and sodium bicarbonate or a variety of.
In some embodiment of the invention, the content of sodium hypochlorite is 15%, 18% or 20% in the decoating liquid.It is described
The content of glycerol is 10%, 13% or 15% in decoating liquid.In the decoating liquid content of dispersing agent be 10%, 13% or
15%.
In the specific embodiment of the invention, the decoating liquid specifically:
Sodium hypochlorite 15%, phenylpropyl triazole 1%, sodium sulfate of polyethenoxy ether of fatty alcohol 2%, KOH0.5%, citric acid
Sodium complexing agent 1%, glycerol 10%, potassium carbonate 10%, surplus are water；
Or sodium hypochlorite 18%, phenylpropyl triazole 0.6%, sodium sulfate of polyethenoxy ether of fatty alcohol 3%, NaOH0.6%,
EDTA-4Na complexing agent 3%, glycerol 13%, potassium carbonate 13%, surplus are water；
Or sodium hypochlorite 20%, phenylpropyl triazole 0.8%, sodium sulfate of polyethenoxy ether of fatty alcohol 4%, NaOH0.8%,
EDTA-4Na complexing agent 2%, glycerol 15%, potassium carbonate 15%, surplus are water.
The present invention provides the techniques of the monomer silicon outside the region logo on a kind of stripping 3D glass, comprising the following steps:
3D glass sample to be processed is placed in strip in decoating liquid described in above-mentioned technical proposal, is dried after washing.
In the present invention, the thickness of monomer silicon to be stripped on the 3D glass sample to be processed is more than or equal to 600nm.
In the present invention, the decoating liquid uses after preferably diluting, and the solution containing decoating liquid is obtained after dilution；Containing moving back
The mass concentration of decoating liquid is preferably 60~75% in the solution of plating solution.
In the present invention, the temperature of the strip is preferably 10~35 DEG C；The time of strip is preferably 15~20min.
In the present invention, the temperature of the washing is preferably 60~65 DEG C；The time of washing is preferably 3~5min.It is described
Washing carries out under conditions of ultrasound；The frequency of the ultrasound is 40Hz；The electric current of ultrasound is preferably 2~5A.
In the present invention, the temperature of the drying is preferably 100~110 DEG C；The time of drying is preferably 3~5min.
Whether the present invention is qualified by range estimation to the strip effect of decoating liquid, that is, estimates the monomer silicon without needing to strip；
It holds plating object not to be corroded, is considered as qualification.
In order to further illustrate the present invention, below with reference to embodiment to logo on a kind of stripping 3D glass provided by the invention
The decoating liquid and technique of monomer silicon outside region are described in detail, but they cannot be interpreted as to the scope of the present invention
Restriction.
Embodiment 1
Based on mass fraction, by sodium hypochlorite 15%, phenylpropyl triazole 1%, sodium sulfate of polyethenoxy ether of fatty alcohol 2%,
KOH 0.5%, sodium citrate complexing agent 1%, glycerol 10%, potassium carbonate 10%, surplus are water mixing, obtain decoating liquid；
Decoating liquid and water are mixed, are configured to the solution that decoating liquid concentration is 65%, i.e., containing the solution of decoating liquid；
By 3D glass sample to be processed, (thickness of monomer silicon to be stripped is more than or equal on 3D glass sample to be processed
The strip 18min at 20 DEG C 600nm) is placed in the above-mentioned solution containing decoating liquid, then at 60 DEG C, ultrasonic wave 40Hz,
Electric current washes 4min under conditions of being 3A, then dries 4min at 105 DEG C, the 3D glass handled.
The strip effect for the decoating liquid that the present invention prepares embodiment 1 carries out parallel test three times, measures moving back for decoating liquid
Effect is plated, is shown in Table 1, table 1 is the strip yield result of the decoating liquid of the embodiment of the present invention 1~3:
The strip yield result of the decoating liquid of 1 embodiment of the present invention 1~3 of table preparation
Embodiment 2
Based on mass fraction, by sodium hypochlorite 18%, phenylpropyl triazole 0.6%, sodium sulfate of polyethenoxy ether of fatty alcohol
3%, NaOH 0.6%, EDTA-4Na complexing agent 3%, glycerol 13%, potassium carbonate 13%, surplus are water mixing, obtain decoating liquid；
Decoating liquid and water are mixed, are configured to the solution that decoating liquid concentration is 62%, i.e., containing the solution of decoating liquid；
By 3D glass sample to be processed, (thickness of monomer silicon to be stripped is more than or equal on 3D glass sample to be processed
The strip 18min at 20 DEG C 600nm) is placed in the above-mentioned solution containing decoating liquid, then at 63 DEG C, ultrasonic wave 40Hz,
Electric current washes 4min under conditions of being 3A, then dries 4min at 107 DEG C, the 3D glass handled.
The strip effect for the decoating liquid that the present invention prepares embodiment 2 carries out parallel test three times, measures moving back for decoating liquid
Effect is plated, is shown in Table 1.
Embodiment 3
Based on mass fraction, by sodium hypochlorite 20%, phenylpropyl triazole 0.8%, sodium sulfate of polyethenoxy ether of fatty alcohol
4%, NaOH 0.8%, EDTA-4Na complexing agent 2%, glycerol 15%, potassium carbonate 15%, surplus are water mixing, obtain decoating liquid；
Decoating liquid and water are mixed, are configured to the solution that decoating liquid concentration is 63%, i.e., containing the solution of decoating liquid；
By 3D glass sample to be processed, (thickness of monomer silicon to be stripped is more than or equal on 3D glass sample to be processed
The strip 18min at 20 DEG C 600nm) is placed in the above-mentioned solution containing decoating liquid, then at 63 DEG C, ultrasonic wave 40Hz,
Electric current washes 3min under conditions of being 5A, then dries 3min at 110 DEG C, the 3D glass handled.
The present invention carries out parallel test three times to decoating liquid prepared by embodiment 3, measures the strip effect of decoating liquid, is shown in Table
1。
As seen from the above embodiment, the present invention provides the strips of the monomer silicon outside the region logo on a kind of stripping 3D glass
Liquid, it is based on mass fraction, composed of the following components: sodium hypochlorite 15~20%, phenylpropyl triazole 0.5~1%, fatty alcohol polyoxy
Ethylene ether sodium sulfate 2~4%, alkaline matter 0.5~1%, complexing agent 1~3%, glycerol 10~15%, dispersing agent 10~15%,
Surplus is water.Decoating liquid neutral and alkali substance provided by the invention and monomer pasc reaction, then in sodium hypochlorite, phenylpropyl triazole, rouge
Fat alcohol polyethenoxy ether sodium sulfate, complexing agent, glycerol and dispersing agent collective effect under make monomer silicon strip, it is with higher
Strip yield；Plating object is held to avoid being corroded.The results showed that the strip yield of decoating liquid is 89%~96%.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of decoating liquid of the monomer silicon on stripping 3D glass outside the region logo, based on mass fraction, composed of the following components:
Sodium hypochlorite 15~20%, phenylpropyl triazole 0.5~1%, sodium sulfate of polyethenoxy ether of fatty alcohol 2~4%, alkaline matter
0.5~1%, complexing agent 1~3%, glycerol 10~15%, dispersing agent 10~15%, surplus is water.
2. decoating liquid according to claim 1, which is characterized in that the alkaline matter is selected from NaOH and/or KOH；
The complexing agent is selected from one of tetrasodium ethylenediamine tetraacetate, sodium versenate and sodium citrate or a variety of；
The dispersing agent is selected from one of potassium carbonate, sodium carbonate and sodium bicarbonate or a variety of.
3. decoating liquid according to claim 1, which is characterized in that in the decoating liquid content of sodium hypochlorite be 15%,
18% or 20%.
4. decoating liquid according to claim 1, which is characterized in that the content of glycerol is 10%, 13% in the decoating liquid
Or 15%.
5. decoating liquid according to claim 1, which is characterized in that in the decoating liquid content of dispersing agent be 10%,
13% or 15%.
6. a kind of technique of the monomer silicon on stripping 3D glass outside the region logo, comprising the following steps:
3D glass sample to be processed is placed in strip in any one of Claims 1 to 5 decoating liquid, is dried after washing.
7. technique according to claim 6, which is characterized in that the temperature of the strip is 10~35 DEG C；The time of strip
For 15~20min.
8. technique according to claim 6, which is characterized in that the temperature of the washing is 60~65 DEG C；The time of washing
For 3~5min.
9. technique according to claim 6, which is characterized in that the washing carries out under conditions of ultrasound；The ultrasound
Frequency be 40Hz；The electric current of ultrasound is 2~5A.
10. technique according to claim 6, which is characterized in that monomer to be stripped on the 3D glass sample to be processed
The thickness of silicon is more than or equal to 600nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811488819.1A CN109534694A (en) | 2018-12-06 | 2018-12-06 | A kind of decoating liquid and technique stripping the monomer silicon on 3D glass outside the region logo |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811488819.1A CN109534694A (en) | 2018-12-06 | 2018-12-06 | A kind of decoating liquid and technique stripping the monomer silicon on 3D glass outside the region logo |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109534694A true CN109534694A (en) | 2019-03-29 |
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ID=65853034
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811488819.1A Pending CN109534694A (en) | 2018-12-06 | 2018-12-06 | A kind of decoating liquid and technique stripping the monomer silicon on 3D glass outside the region logo |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1944613A (en) * | 2006-06-07 | 2007-04-11 | 天津晶岭电子材料科技有限公司 | Cleaning agent for integrated circuit substrate silicon chip and its cleaning method |
| CN103333748B (en) * | 2013-07-17 | 2014-08-13 | 大连奥首科技有限公司 | Silicon wafer cleaning fluid, preparation method and use thereof and silicon wafer cleaning method |
| JP5824706B1 (en) * | 2014-05-14 | 2015-11-25 | 大同化学工業株式会社 | Surface treatment composition for silicon wafer |
| CN107299005A (en) * | 2017-06-14 | 2017-10-27 | 广东红日星实业有限公司 | A kind of glass cleaner and preparation method thereof |
| CN108218241A (en) * | 2016-12-22 | 2018-06-29 | 蓝思科技（长沙）有限公司 | The decoating liquid and its application method of a kind of glass surface film layer and application |
| CN108863104A (en) * | 2017-05-10 | 2018-11-23 | 蓝思科技（长沙）有限公司 | The agent of glass strip and glass withdrawal plating |
-
2018
- 2018-12-06 CN CN201811488819.1A patent/CN109534694A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1944613A (en) * | 2006-06-07 | 2007-04-11 | 天津晶岭电子材料科技有限公司 | Cleaning agent for integrated circuit substrate silicon chip and its cleaning method |
| CN103333748B (en) * | 2013-07-17 | 2014-08-13 | 大连奥首科技有限公司 | Silicon wafer cleaning fluid, preparation method and use thereof and silicon wafer cleaning method |
| JP5824706B1 (en) * | 2014-05-14 | 2015-11-25 | 大同化学工業株式会社 | Surface treatment composition for silicon wafer |
| CN108218241A (en) * | 2016-12-22 | 2018-06-29 | 蓝思科技（长沙）有限公司 | The decoating liquid and its application method of a kind of glass surface film layer and application |
| CN108863104A (en) * | 2017-05-10 | 2018-11-23 | 蓝思科技（长沙）有限公司 | The agent of glass strip and glass withdrawal plating |
| CN107299005A (en) * | 2017-06-14 | 2017-10-27 | 广东红日星实业有限公司 | A kind of glass cleaner and preparation method thereof |
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Application publication date: 20190329 |