CN109534286A - A kind of material surface nesting nanostructure and preparation method thereof - Google Patents
A kind of material surface nesting nanostructure and preparation method thereof Download PDFInfo
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- CN109534286A CN109534286A CN201811312473.XA CN201811312473A CN109534286A CN 109534286 A CN109534286 A CN 109534286A CN 201811312473 A CN201811312473 A CN 201811312473A CN 109534286 A CN109534286 A CN 109534286A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
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Abstract
The invention discloses a kind of material surface nesting nanostructure preparation methods.The present invention utilizes femtosecond laser micro-nano technology platform, material surface is processed by twice sweep, by the energy density, laser polarization and the scanning direction that accurately control laser, it can be convenient and quickly induce striated structure nesting nano-pore structure in silicon face, striated structure nesting nano-pillar array structure is induced in stainless steel surface, these surface nano-structures can be used for the fields such as biological micro-fluidic devices, solar battery influx and translocation, display, anti-fake, waveguide and data storage.
Description
Technical field
The present invention relates to nanostructure technology fields, and in particular to a kind of material surface nesting nanostructure and its preparation side
Method.
Background technique
Nano structural material has the excellent optical different from block materials, electricity, chemistry and mechanical characteristic, is widely applied
In in photoelectron technical field.Common nanostructure includes porous structure, quantum dot, nanometer rods, nano array structure, nanometer
Film and cone-shaped protrusion etc., their common feature are that have biggish specific surface area, higher chemical mobility of the surface, gas
Absorption advantage and influx and translocation etc..
Currently, the common preparation method of nanostructure includes hydrothermal etching, plasma enhanced chemical vapor deposition, change
Etching, photoetching technique and dry and wet etching technique etc. are learned, although these preparation methods comparative maturity, cumbersome,
Process flow is relative complex, some are also needed by accurate exposure mask and special composition material.
Summary of the invention
It is an object of the invention to provide a kind of material surface nesting nanostructure in place of overcome the deficiencies in the prior art
And preparation method thereof, preparation process is simple, quickly and easily can induce striated structure in silicon chip surface and be nested with nano-pore knot
Structure induces striated structure nesting nano-pillar array structure in stainless steel surface, realizes that the surface of material is modified.
To achieve the above object, the technical solution adopted by the present invention is as follows:
A kind of material surface nesting nanostructure preparation method, comprising the following steps:
(1) semi-conductor silicon chip or stainless steel sample be after acetone and deionized water ultrasonic treatment, using being dried with nitrogen, Gu
It is scheduled on the three-dimensional micro-displacement platform in femtosecond laser micro-nano technology platform；
(2) femtosecond laser amplifying stage output wavelength is 800nm, and pulse width 90fs, repetition rate is the femtosecond of 1kHz
Pulse laser is irradiated to sample surfaces after focal length is the lens focus of 15cm；
(3) the output energy that femtosecond pulse is continuously adjusted using the combination of half-wave plate and Glan prism, passes through electronics
Gate accurately chooses laser pulse number, and the movement of three-dimensional micro-displacement platform is controlled by computer, is swashed using femtosecond pulse
Light direct write forms the structure of striated structure nesting nano-pore in the spatial induction of semi-conductor silicon chip in sample surfaces rescan
Or striated structure nesting nano column array is formed in the spatial induction of stainless steel.
The present invention can be convenient quickly by the method using the processing of femtosecond laser rescan on semiconductor silicon surface
The structure for inducing striated structure nesting nano-pore induces striated structure nesting nano column array in stainless steel surface, realizes
The surface of silicon and stainless steel material is modified, prepares the new material that surface has nanostructure, realizes that the surface of material is modified, system
Standby simple process, without accurate exposure mask and special composition material.
As the preferred embodiment of material surface nesting nanostructure preparation method of the present invention, the sample is
Semi-conductor silicon chip, the energy density of the femtosecond pulse are 159.2mJ/cm2, scanning speed 1mm/s.
As the preferred embodiment of material surface nesting nanostructure preparation method of the present invention, the step
(3) in, laser is along the vertical direction after the processing of semi-conductor silicon chip surface scan is primary, then in the horizontal direction in semi-conductor silicon chip table
Surface scan processing is primary, the successive ablation of same position on semi-conductor silicon chip surface twice, and the polarization direction of laser and scanning
Direction it is consistent, laser semi-conductor silicon chip spatial induction formed striated structure nesting nano-pore structure.
As the preferred embodiment of material surface nesting nanostructure preparation method of the present invention, the sample is
Stainless steel, the energy density of the femtosecond pulse are 160mJ/cm2, scanning speed 4mm/s.
As the preferred embodiment of material surface nesting nanostructure preparation method of the present invention, the step
(3) in, laser adds after stainless steel surface scanning machining is primary, then in the horizontal direction in stainless steel watch Surface scan along the vertical direction
Work is primary, the successive ablation of the same position of stainless steel surface twice, the polarization direction of laser and the direction of scanning are consistent or vertical
Directly, laser induces striated structure nesting nanometer rod structure in stainless steel surface.
The energy density of laser, laser polarization and rescan direction are to the nested nanostructure in surface in above-mentioned technical proposal
Formation be affected, the application, which passes through, is directed to silicon chip sample or stainless steel sample, the accurate energy density for controlling laser, laser
Polarization and rescan direction, enable femtosecond laser to go out the knot of striated structure nesting nano-pore in semiconductor silicon spatial induction
Structure induces striated structure nesting nano column array in stainless steel surface, realizes that the surface of silicon and stainless steel material is modified.
As the preferred embodiment of material surface nesting nanostructure preparation method of the present invention, the semiconductor
Silicon wafer is the N-type silicon chip for mixing P.
As the preferred embodiment of material surface nesting nanostructure preparation method of the present invention, the semiconductor
The diameter of silicon wafer is 5.08cm, and with a thickness of 0.5mm, for resistivity less than 0.01 Ω cm, crystal orientation is<100>.
As the preferred embodiment of material surface nesting nanostructure preparation method of the present invention, the stainless steel
Surface roughness be less than 0.5nm, with a thickness of 250 μm.
The present invention also provides the material surface nesting nanostructures being prepared according to upper the method.
The material that surface is covered with nested nanostructure of the present invention can be used for biological micro-fluidic devices, solar-electricity
The fields such as pond influx and translocation, display, anti-fake, waveguide and data storage.
Compared with prior art, the invention has the benefit that
The present invention utilizes femtosecond laser micro-nano technology platform, and material surface is processed by twice sweep, by accurately controlling
Energy density, laser polarization and the scanning direction of laser can be convenient and quickly induce striated structure nesting in silicon face and receive
Metre hole structure induces striated structure nesting nano-pillar array structure in stainless steel surface, these surface nano-structures can be used
In fields such as biological micro-fluidic devices, solar battery influx and translocation, display, anti-fake, waveguide and data storages.
Detailed description of the invention
Fig. 1 femtosecond laser micro-nano technology platform schematic diagram.
The striated structure nesting nano-pore structure of Fig. 2 twice sweep silicon face induction.
When Fig. 3 laser polarization is parallel with scanning direction, the nanostructure of twice sweep stainless steel surface induction.
When Fig. 4 laser polarization is vertical with scanning direction, the nanostructure of twice sweep stainless steel surface induction.
Specific embodiment
Purposes, technical schemes and advantages in order to better illustrate the present invention, below in conjunction with specific embodiment to the present invention
It further illustrates.It will be appreciated by those skilled in the art that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention.
In embodiment, used experimental method is conventional method unless otherwise specified, material used, reagent etc.,
It is commercially available unless otherwise specified.
Fig. 1 is that the femtosecond laser micro-nano technology platform that material surface nesting nanostructure of the present invention preparation uses shows
It is intended to.
Embodiment 1
A kind of embodiment of material surface nesting nanostructure preparation method of the present invention, material described in the present embodiment
Surface nesting nanostructure preparation method the following steps are included:
(1) semi-conductor silicon chip sample using being dried with nitrogen, and is fixed on winged after acetone and deionized water ultrasonic treatment
On three-dimensional micro-displacement platform in second laser micro/nano processing platform, wherein the semi-conductor silicon chip is the N-type silicon chip for mixing P, and half
The diameter of conductor silicon wafer is 5.08cm, and with a thickness of 0.5mm, for resistivity less than 0.01 Ω cm, crystal orientation is<100>；
(2) femtosecond laser amplifying stage output wavelength is 800nm, and pulse width 90fs, repetition rate is the femtosecond of 1kHz
Pulse laser is irradiated to sample surfaces after focal length is the lens focus of 15cm, and the spot size after focusing is 40 μm；
(3) the output energy of femtosecond pulse, the femtosecond are continuously adjusted using the combination of half-wave plate and Glan prism
The energy density of pulse laser is 159.2mJ/cm2, scanning speed 1mm/s, by connect computer electronic gate accurately select
Laser pulse number is taken, and three-dimensional micro-displacement platform is controlled in tri- directions movements of XYZ by computer, realizes flying for sample surfaces
Second laser direct-writing, laser is along the vertical direction after the processing of semi-conductor silicon chip surface scan is primary, then in the horizontal direction in semiconductor
Silicon chip surface scanning machining is primary, the successive ablation of the same position on semi-conductor silicon chip surface twice, and the polarization direction of laser
Consistent with the direction of scanning, laser forms the structure of striated structure nesting nano-pore in the spatial induction of semi-conductor silicon chip.
Utilize the scanning electron microscope (Scanning Electron Microscopy, SEM) of model JSM-7001F
Silicon sample surface micro-nano structure pattern after being analyzed and characterized femtosecond laser processing.
Fig. 2 is the SEM picture for the nested nanostructure that femtosecond laser twice sweep silicon wafer induces.Laser energy density is
159.2mJ/cm2, scanning speed 1mm/s.Fig. 2 (a) is first to use the laser polarized vertically scanning machining one along the vertical direction
Secondary, sample is fixed, then scanning machining is primary in the horizontal direction using the laser of horizontal polarization, such as white arrow institute in figure
Show.The successive ablation of silicon chip surface same position twice, laser polarization direction is consistent with the direction of twice sweep respectively, Fig. 2 (b)
For the SEM picture of the intermediate region Fig. 2 (a) amplification factor, striated structure can be seen and be nested inside with nano-pore structure.
Embodiment 2
A kind of embodiment of material surface nesting nanostructure preparation method of the present invention, material described in the present embodiment
Surface nesting nanostructure preparation method the following steps are included:
(1) stainless steel sample, using being dried with nitrogen, is fixed on femtosecond laser after acetone and deionized water ultrasonic treatment
On three-dimensional micro-displacement platform in micro-nano technology platform, wherein the surface roughness of the stainless steel is less than 0.5nm, with a thickness of
250μm；
(2) femtosecond laser amplifying stage output wavelength is 800nm, and pulse width 90fs, repetition rate is the femtosecond of 1kHz
Pulse laser is irradiated to sample surfaces after focal length is the lens focus of 15cm；
(3) the output energy of femtosecond pulse, the femtosecond are continuously adjusted using the combination of half-wave plate and Glan prism
The energy density of pulse laser is 160mJ/cm2, scanning speed 4mm/s accurately chooses laser pulse number by electronic gate
Mesh, and three-dimensional micro-displacement platform is controlled in tri- directions movements of XYZ by computer, realize the femtosecond laser direct write of sample surfaces,
Laser is along the vertical direction after stainless steel surface scanning machining is primary, then in the horizontal direction in stainless steel surface scanning machining one
It is secondary, the successive ablation of the same position of stainless steel surface twice, the polarization direction of laser and the direction of twice sweep are consistent, swash
Light induces striated structure nesting nanometer rod structure in stainless steel surface.
Utilize the scanning electron microscope (Scanning Electron Microscopy, SEM) of model JSM-7001F
Stainless steel sample surface micro-nano structure pattern after being analyzed and characterized femtosecond laser processing.
Fig. 3 is the SEM picture for the nested nanostructure that femtosecond laser twice sweep stainless steel surface induces.When laser is inclined
When vibration direction is consistent with scanning direction, nanostructure shown in Fig. 3 is obtained, is nano-pillar array structure, quilt in the red block of two sides
Striated structure surrounds.
Embodiment 3
A kind of embodiment of material surface nesting nanostructure preparation method of the present invention, material described in the present embodiment
Surface nesting nanostructure preparation method the following steps are included:
(1) stainless steel sample, using being dried with nitrogen, is fixed on femtosecond laser after acetone and deionized water ultrasonic treatment
On three-dimensional micro-displacement platform in micro-nano technology platform, wherein the surface roughness of the stainless steel is less than 0.5nm, with a thickness of
250μm；
(2) femtosecond laser amplifying stage output wavelength is 800nm, and pulse width 90fs, repetition rate is the femtosecond of 1kHz
Pulse laser is irradiated to sample surfaces after focal length is the lens focus of 15cm；
(3) the output energy of femtosecond pulse, the femtosecond are continuously adjusted using the combination of half-wave plate and Glan prism
The energy density of pulse laser is 160mJ/cm2, scanning speed 4mm/s accurately chooses laser pulse number by electronic gate
Mesh, and three-dimensional micro-displacement platform is controlled in tri- directions movements of XYZ by computer, realize the femtosecond laser direct write of sample surfaces,
Laser is along the vertical direction after stainless steel surface scanning machining is primary, then in the horizontal direction in stainless steel surface scanning machining one
It is secondary, the successive ablation of the same position of stainless steel surface twice, the polarization direction of laser is vertical with the direction of twice sweep respectively,
Laser induces striated structure nesting nanometer rod structure in stainless steel surface.
Utilize the scanning electron microscope (Scanning Electron Microscopy, SEM) of model JSM-7001F
Stainless steel sample surface micro-nano structure pattern after being analyzed and characterized femtosecond laser processing.
Fig. 4 is the SEM picture for the nested nanostructure that femtosecond laser twice sweep stainless steel surface induces.When laser is inclined
When vibration direction is vertical with scanning direction, nanostructure is then as shown in figure 4, from Fig. 4 (b) it can be seen that the distribution face of nano column array
Product is bigger than the nanostructure of Fig. 3, and quality will be got well.
The above result shows that laser polarization direction two ways consistent or vertical with scanning direction can be in stainless steel watch
Face induces striated structure nesting nanometer rod structure.
In conclusion the present invention utilizes femtosecond laser micro-nano technology platform, material surface is processed by twice sweep, is passed through
Control the energy density of laser, laser polarization can be convenient that efficiently to induce striated structure in silicon face nested with scanning direction
Nano-pore structure induces striated structure nesting nano-pillar array structure in stainless steel surface, these surface nano-structures can be with
For fields such as biological micro-fluidic devices, solar battery influx and translocation, display, anti-fake, waveguide and data storages.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than protects to the present invention
The limitation of range is protected, although the invention is described in detail with reference to the preferred embodiments, those skilled in the art should
Understand, it can be with modification or equivalent replacement of the technical solution of the present invention are made, without departing from the essence of technical solution of the present invention
And range.
Claims (9)
1. a kind of material surface nesting nanostructure preparation method, which comprises the following steps:
(1) semi-conductor silicon chip or stainless steel sample, using being dried with nitrogen, are fixed on after acetone and deionized water ultrasonic treatment
On three-dimensional micro-displacement platform in femtosecond laser micro-nano technology platform；
(2) femtosecond laser amplifying stage output wavelength is 800nm, and pulse width 90fs, repetition rate is the femtosecond pulse of 1kHz
Laser is irradiated to sample surfaces after focal length is the lens focus of 15cm；
(3) the output energy that femtosecond pulse is continuously adjusted using the combination of half-wave plate and Glan prism, passes through electronic gate
It is accurate to choose laser pulse number, and by the movement of the three-dimensional micro-displacement platform of computer control, it is straight using femtosecond pulse
Write, in sample surfaces rescan, the spatial induction of semi-conductor silicon chip formed striated structure nesting nano-pore structure or
The spatial induction of stainless steel forms striated structure nesting nano column array.
2. material surface nesting nanostructure preparation method according to claim 1, which is characterized in that the sample is half
Conductor silicon wafer, the energy density of the femtosecond pulse are 159.2mJ/cm2, scanning speed 1mm/s.
3. material surface nesting nanostructure preparation method according to claim 2, which is characterized in that the step (3)
In, laser is along the vertical direction after the processing of semi-conductor silicon chip surface scan is primary, then in the horizontal direction on semi-conductor silicon chip surface
Scanning machining is primary, the successive ablation of the same position on semi-conductor silicon chip surface twice, and the polarization direction of laser and scanning
Direction is consistent, and laser forms the structure of striated structure nesting nano-pore in the spatial induction of semi-conductor silicon chip.
4. material surface nesting nanostructure preparation method according to claim 1, which is characterized in that the sample is not
Become rusty steel, and the energy density of the femtosecond pulse is 160mJ/cm2, scanning speed 4mm/s.
5. material surface nesting nanostructure preparation method according to claim 4, which is characterized in that the step (3)
In, laser is along the vertical direction after stainless steel surface scanning machining is primary, then in the horizontal direction in stainless steel surface scanning machining
Once, the successive ablation of the same position of stainless steel surface twice, the polarization direction of laser and the direction of scanning are consistent or vertical,
Laser induces striated structure nesting nanometer rod structure in stainless steel surface.
6. material surface nesting nanostructure preparation method according to claim 1, which is characterized in that the semiconductor silicon
Piece is the N-type silicon chip for mixing P.
7. material surface nesting nanostructure preparation method according to claim 1, which is characterized in that the semiconductor silicon
The diameter of piece is 5.08cm, and with a thickness of 0.5mm, for resistivity less than 0.01 Ω cm, crystal orientation is<100>.
8. material surface nesting nanostructure preparation method according to claim 1, which is characterized in that the stainless steel
Surface roughness is less than 0.5nm, with a thickness of 250 μm.
9. the material surface nesting nanostructure that any one the method is prepared according to claim 1~8.
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Application publication date: 20190329 |