CN109521657A - Dry developing method for small molecule photoresist in surface plasma photoetching - Google Patents
Dry developing method for small molecule photoresist in surface plasma photoetching Download PDFInfo
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- CN109521657A CN109521657A CN201811509683.8A CN201811509683A CN109521657A CN 109521657 A CN109521657 A CN 109521657A CN 201811509683 A CN201811509683 A CN 201811509683A CN 109521657 A CN109521657 A CN 109521657A
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 69
- 238000001259 photo etching Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 40
- 150000003384 small molecules Chemical class 0.000 title description 2
- 239000010410 layer Substances 0.000 claims abstract description 95
- 238000011161 development Methods 0.000 claims abstract description 44
- 238000005530 etching Methods 0.000 claims abstract description 42
- 238000002444 silanisation Methods 0.000 claims abstract description 29
- 230000005284 excitation Effects 0.000 claims abstract description 25
- 238000005516 engineering process Methods 0.000 claims abstract description 14
- 238000001020 plasma etching Methods 0.000 claims abstract description 4
- 238000001035 drying Methods 0.000 claims description 33
- -1 oxygen radical Chemical class 0.000 claims description 20
- 239000002346 layers by function Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000010884 ion-beam technique Methods 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 210000001951 dura mater Anatomy 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 230000002708 enhancing effect Effects 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 239000002609 medium Substances 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 238000012546 transfer Methods 0.000 abstract description 2
- 239000012790 adhesive layer Substances 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000003292 glue Substances 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 238000013036 cure process Methods 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
The invention provides a dry developing method of a small molecular photoresist in surface plasma photoetching. The sample characteristic structure comprises an excitation layer, a photoresist layer and an enhancement layer. And (3) dry development process: exposing a sample on a surface plasma photoetching machine to obtain a super-resolution photoetching pattern, and recording the super-resolution photoetching pattern on a photoetching adhesive layer; based on different photoresist components of photosensitive and non-photosensitive areas, selective silanization doping treatment can be carried out on the surface of the photoresist; and (3) hardening the silanized area by utilizing a reactive ion etching technology, simultaneously etching and removing the non-silanized area, further taking the hardened layer as a mask, and thoroughly etching the non-silanized area to realize dry development so as to obtain a photoresist pattern with a hard layer with a certain thickness. The method has the advantages that: firstly, the dry development can avoid the problems of line drift, collapse, fracture and the like easily occurring in the wet development; and secondly, the obtained photoresist pattern with the hard layer can improve the further etching transfer performance of the thin photoresist in surface plasma photoetching.
Description
Technical field
The invention belongs to optical micro/nano processing technique fields, and in particular to a kind of surface plasma photoetching small molecular light
The dry process development method of photoresist.
Background technique
In recent years, the appearance of surface plasma photoetching causes the great interest of academia, current the experimental results
Show that the technology has high-resolution, high yield, the advantage of low cost, there are very big potentiality to become and solve nanometer image photoetching skill
One of the important means of art problem.Surface plasma photoetching technique is in the process for pushing practical application to, and there is also some wait solve
Certainly the problem of, for example lines are easy to appear in wet development process for the photoetching lines of ultrahigh resolution, such as 22nm line width
Drift about, collapse, break and other issues；Further, since the limited depth of focus of surface plasma photoetching, general glue thickness 10~
40nm, this will be unfavorable for the further etching and transmitting of litho pattern.
Here, a kind of it is proposed that method of the dry process development of surface plasma photoetching small molecular photoresist.The party
Method is that surface silanization doping treatment is carried out based on the photoresist film layer after first will be photosensitive, photosensitive region and non-photo-sensing region it is poly-
Closing object hydroxy radical content has significant difference, so as to carry out silanization treatment in the region rich in hydroxyl, then carries out oxygen freedom
The surface plasma of base and fluoro free radical carries out reactive ion etching processing, so that doped region becomes dura mater, rather than doped region
It is etched, to realize dry process development.Lines drift is easily led to solve wet development in surface plasma photoetching, is fallen
The problems such as collapsing or being broken, while can also alleviate that surface plasma photoetching depth of focus is shallow, and the anti-etching transmission capacity of photoetching offset plate figure is weak
Problem.
Summary of the invention
The technical problem to be solved by the present invention is litho pattern suitable for exposure dose or slightly higher, in wet development
Process, due to the tension of aqueous solution and the factors such as impact force of solution motion, be easy to cause 100nm or less lines drift,
The problems such as collapsing, being broken.For this purpose, it is proposed that dry process development technology, avoids the generation of these problems.In addition, surface plasma
The depth of focus of body photoetching is relatively shallower, causes the further etching transmission capacity of litho pattern limited, and the tool that dry process development obtains
There is the photoetching offset plate figure of certain thickness hard formation, it will improve the etching transmission capacity of limited glue thickness.
The technical solution adopted by the present invention to solve the technical problems is: a kind of surface plasma photoetching small molecular light
The dry process development method of photoresist, comprising the following steps:
The preparation of step (1) functional layer: preparing functional film layer on substrate, and obtained super resolution lithography figure is further carved
Erosion is transmitted to functional layer；
The preparation of step (2) enhancement layer: a nanometer film layer is prepared on a functional, for enhancing surface plasma wave；
The preparation of step (3) photoresist layer: preparing photoresist layer on enhancement layer, records the super-resolution photoetching figure of acquisition
Shape；
The preparation of step (4) excitation layer: nanometer film layer is prepared on photoresist layer, for exciting the table of specific transmission wavelength
Surface plasma wave；
Step (5) exposure: being exposed on surface plasma photoetching machine, acquisition super-resolution litho pattern, and
Photoresist layer forms " latent image "；
The removal of step (6) excitation layer: with the excitation layer on dry or wet removal photoresist；
Step (7) silanization treatment: it by the sample after removal excitation layer, is placed into silanization treatment device, is had
The silanization doping treatment of selectivity；
Step (8) dry process development: reactive ion etching technology is utilized, the sample after silanization treatment is performed etching, silicon
The photoresist region of alkanisation processing is remained dura mater is formed, and the photoresist that silanization region does not occur will be carved thoroughly
Erosion finally obtains the photoetching offset plate figure with certain thickness hard formation；
The etching of step (9) functional graphic is transmitted: the litho pattern that dry process development obtains further being etched and is transmitted to function
Ergosphere, the final preparation for realizing function element.
Functional layer in the step (1), material include but is not limited to metal and medium, metal Ag, Au or Cr,
Medium is Si, MgF2Or Si3N4, 5~2000nm of functional layer thickness.
Enhancement layer in the step (2), material include but is not limited to metal, metal Ag, Au or Al, thicknesses of layers 5
~200nm.
Photoresist layer in the step (3), small molecule systems of the polymer molecular weight 3000~10000 in photoresist
Photoresist, hydroxyl quantity of the polymer in photosensitive front and back have significant change, 10~100nm of film thickness.
Excitation layer in the step (4), film layer can be single layer, be also possible to multilayer film, and material includes metal and is situated between
Matter, metal Ag, Au or Al, medium MgF2、TiO2Or SiO2.5~200nm of thicknesses of layers.
Exposure in the step (5), litho machine can be, but not limited to surface plasma photoetching machine.
Excitation layer removal in the step (6), minimizing technology includes dry method and wet process.
Silanization treatment in the step (7), 100~200 DEG C of processing unit temperature, the protection of chamber filling with inert gas,
Handle 0.1~5h of time.
Dry process development in the step (8), reactive ion include oxygen radical and fluoro free radical surface plasma；
The etching of functional graphic in the step (8) is transmitted, and lithographic method includes ion beam etching in dry method, reaction
Ion etching and wet etching etching.
The present invention compared with prior art possessed by advantage:
(1) dry process development is not in lines drift, collapsing, broken string and other issues relative to traditional wet development.
(2) there is the hard formation of ten rans at the top of the photoetching offset plate figure that dry process development obtains, obtained relative to wet development
The complete photoetching offset plate figure obtained has stronger etching transmission capacity.
(3) dry process development only requires that the top layer regions for being used to form hardened layer of photoresist are compared with preferable light field
The photosensitive situation in hardening region bottom photoresist below part can be ignored in degree.And wet development then need photoresist from top layer to
Bottom all has preferable light field contrast.In addition, it is relatively shallower for plasma photoetching depth of focus, simultaneously because material itself
Absorption characteristic, photoresist opposing floor portion light field contrast usually not top it is good, so dry process development can also be alleviated
The problems such as light field depth of focus is shallow and photoresist layer bottom section light field contrast is low.
Detailed description of the invention
Fig. 1 is sample structure schematic diagram of the present invention；
Fig. 2 is sample exposure schematic diagram of the present invention；
Fig. 3 is that the photoresist composition transfer after sample of the present invention is photosensitive is intended to；
Fig. 4 is the schematic diagram after sample removal excitation layer of the present invention；
Fig. 5 is the schematic diagram after sample silanization treatment of the present invention；
Fig. 6 is the sample cure process schematic diagram after silanization of the present invention；
Fig. 7 is continuation dry etching development schematic diagram after cure process of the present invention；
Fig. 8 is the litho pattern schematic diagram after dry process development of the present invention；
Fig. 9 is that litho pattern etching of the present invention is transmitted to functional graphic.
In figure: 1 is substrate；2 be functional layer；3 be surface plasma enhancement layer；4 be photoresist layer；5 be surface etc. from
Daughter excitation layer；6 be mask layer；7 be mask substrate；8 be ultraviolet mercury lamp light radiation；9 be photo resist photosensitive region；10 be photosensitive
The silanization doping treatment result of region photoresist top layer；11 be the oxygen radical and fluoro free radical of dry etching；12 be dry method
The cured film formed after etching；13 be the oxygen radical of dry etching.
Specific embodiment
With reference to the accompanying drawing and the present invention is discussed in detail in specific embodiment.But embodiment below is only limitted to explain this hair
Bright, protection scope of the present invention should include the full content of claim, and by following embodiment to the technology people in field
The full content of the claims in the present invention can be thus achieved in member.
Embodiment 1, Ag do surface plasma excitation layer and enhancement layer, polycarboxylated styrene (PHS) system ultraviolet photolithographic
Glue as photosensitive material, using dry process development obtain high quality litho pattern and etching be transmitted to Au functional layer process it is as follows:
(1) in the Xiao Te substrate of glass of thickness 0.5mm, being sequentially prepared Au functional layer and Ag using magnetron sputtering method enhances
Layer, Au tunic thickness 80nm, Ag tunic thickness 50nm.As shown in Fig. 1 in Figure of description, substrate 1 is Xiao Te substrate of glass, functional layer
2 be the Au film of 80nm thickness, and surface plasma enhancement layer 3 is the Ag film of 50nm thickness；
(2) on Ag film spin coating about 40nm thickness PHS photoresist, spin speed 4000rpm, time 30s.Then in 95 DEG C
Front baking 5min on hot plate takes out natural cooling.As shown in Figure 1, photoresist layer 4 is unexposed PHS photoresist layer；
(3) Ag excitation layer, film thickness 15nm are prepared using vacuum thermal evaporation hair method, as shown in Figure 1, surface plasma excites
Layer 5 is Ag excitation layer；
(4) the surface plasma exposure machine for being 365nm with central wavelength is exposed print, and Cr is mask layer, Cr
Thickness degree 80nm, mask are the raster graphic of period 200nm, exposure dose about 1500mJ/cm2, such as Fig. 2 institute in Figure of description
Show, mask layer 6 is the Cr layer on mask, and mask substrate 7 is the substrate of mask plate；Ultraviolet mercury lamp light radiation 8 is that center wavelength is
The ultraviolet source of 365nm；
(5) performance in the photo resist photosensitive region after exposing changes, a large amount of protected hydroxyl quilts on poly- aggregation
Release, as shown in figure 3, photo resist photosensitive region 9；
(6) excitation layer that glue upper layer is removed after exposing, can slowly tear top layer Ag excitation layer off, as shown in Figure 4 with 3M adhesive tape；
(7) the silanization doping treatment of photosensitive region.Silanization environment is N2, medical fluid is hmds, processing temperature
150 DEG C of degree, time 3min.Result after silanization treatment as shown in figure 5, photosensitive region photoresist top layer silanization doping treatment
As a result 10 be to be silylated doping at the top of photosensitive region photoresist；
(8) reactive ion beam etching (RIBE) equipment is utilized, film layer cure process is carried out to silanization doped region.Etching condition
Be: etching power 50W, chamber press 1Pa, and 10 DEG C of sample stage, oxygen radical and fluoro free radical ratio are 8:2, etch period about 30s.
Film layer is shown as shown in Figures 6 and 7 after hardening, the oxygen radical and fluoro free radical 11 of dry etching, is formed after dry etching
Cured film 12；
(9) after hard formation is formed, continue to perform etching not photosensitive photoresist region with oxygen radical, until photoresist is carved
Erosion on earth, eventually forms the photoetching offset plate figure with hard formation, and dry process development is completed, shown as illustrated in figs. 7 and 8, dry etching
Oxygen radical 13；
(10) litho pattern after dry process development is performed etching and is transmitted to functional layer, it, will using ion beam etching technology
Photoetching offset plate figure etching is transmitted to Au functional layer.Etching condition: 30 ° of etching angle, ion beam current 120mA, sample stage rotation
20rpm etches about 2min, after etching is completed, remaining Ag layer is removed using dust technology, obtains desired Au nano functional device
Part, as shown in Figure 9.
Embodiment 2, Al do surface plasma excitation layer and enhancement layer, polycarboxylated styrene (PHS) system ultraviolet photolithographic
Glue as photosensitive material, using dry process development obtain high quality litho pattern and etching be transmitted to Cr functional layer process it is as follows:
(1) in the Xiao Te substrate of glass of thickness 0.5mm, being sequentially prepared Cr functional layer and Al using magnetron sputtering method enhances
Layer, Cr tunic thickness 50nm, Al tunic thickness 20nm.As shown in Figure 1, substrate 1 is Xiao Te substrate of glass, functional layer 2 is 50nm thick
Cr film, surface plasma enhancement layer 3 are the Al film of 20nm thickness；
(2) on Al film spin coating about 25nm thickness PHS photoresist, spin speed 4000rpm, time 30s.Then in 95 DEG C
Front baking 5min on hot plate takes out natural cooling.As shown in Figure 1, photoresist layer 4 is unexposed PHS photoresist layer；
(3) Al excitation layer, film thickness 12nm are prepared using vacuum thermal evaporation hair method, as shown in Figure 1, surface plasma excites
Layer 5 is Al excitation layer；
(4) the UV surface plasma exposure machine for being 365nm with central wavelength is exposed print, and Cr makees mask
Layer, Cr thickness degree 40nm, mask are the raster graphic of period 200nm, exposure dose about 2500mJ/cm2, as shown in Fig. 2, mask
Layer 6 is the Cr layer on mask, and mask substrate 7 is the substrate of mask plate；Ultraviolet mercury lamp light radiation 8 is that center wavelength is 365nm's
Ultraviolet source；
(5) performance in the photo resist photosensitive region after exposing changes, a large amount of protected hydroxyl quilts on poly- aggregation
Release, as shown in figure 3, photo resist photosensitive region 9；
(6) excitation layer that glue upper layer is removed after exposing, can slowly tear top layer Al excitation layer off, as shown in Figure 4 with 3M adhesive tape.
(7) the silanization doping treatment of photosensitive region.Silanization environment is N2, medical fluid is hmds, processing temperature
125 DEG C of degree, time 10min.Result after silanization treatment is as shown in figure 5, at the silanization doping of photosensitive region photoresist top layer
Reason result 10 is to be silylated doping at the top of photosensitive region photoresist；
(8) reactive ion beam etching (RIBE) equipment is utilized, film layer cure process is carried out to silanization doped region.Etching condition
Be: etching power 50W, chamber press 1Pa, and 10 DEG C of sample stage, oxygen radical and fluoro free radical ratio are 8:2, etch period about 20s.
Film layer is as shown in Figures 6 and 7 after hardening, the oxygen radical and fluoro free radical 11 of dry etching, the hardening formed after dry etching
Film layer 12.
(9) after cured film is formed, continue to be performed etching with oxygen radical to for not photosensitive photoresist region, Zhi Daoguang
Photoresist etches into bottom, eventually forms the photoetching offset plate figure with hard formation, and dry process development is completed, and as illustrated in figs. 7 and 8, dry method is carved
The oxygen radical 13 of erosion；
(10) the litho pattern etching after dry process development is transmitted to functional layer, Al technology is gone using wet process, by photoresist
Pattern etching is transmitted to Al enhancement layer.Wet etching condition: impregnating about 5min in concentrated phosphoric acid, and bottom Al is corroded thoroughly,
Then be rinsed with water it is clean, then with being dried with nitrogen；Next, continuing with ion beam etching technology, figure is transmitted to Cr function
Ergosphere, etching condition: ion beam current 120mA, sample stage rotate 20rpm, etch about 4min, and Cr is carved thoroughly, after etching is completed,
It recycles dilute sulfuric acid quickly to remove remaining Al layer, obtains desired Cr nano functional device, as shown in Figure 9.
What the present invention was not disclosed in detail partly belongs to techniques known.
Although the illustrative specific embodiment of the present invention is described above, in order to the technology people of this technology neck
Member understands the present invention, it should be apparent that the present invention is not limited to the range of specific embodiment, to the ordinary skill of the art
For personnel, as long as various change is in the spirit and scope of the present invention that the attached claims limit and determine, these become
Change is it will be apparent that all utilize the innovation and creation of present inventive concept in the column of protection.
Claims (9)
1. a kind of dry process development method of surface plasma photoetching small molecular photoresist, it is characterised in that: including following step
It is rapid:
The preparation of step (1) functional layer: preparing functional film layer on substrate, for super resolution lithography figure further to be etched biography
It is delivered to functional layer；
The preparation of step (2) enhancement layer: a nanometer film layer is prepared on a functional, for enhancing surface plasma wave；
The preparation of step (3) photoresist layer: preparing photoresist layer on enhancement layer, records the super-resolution litho pattern of acquisition；
The preparation of step (4) excitation layer: nanometer film layer is prepared on photoresist layer, for exciting the surface etc. of specific transmission wavelength
Ion bulk wave；
Step (5) exposure: being exposed on surface plasma photoetching machine, obtains super-resolution litho pattern, and in photoetching
Glue-line forms " latent image "；
The removal of step (6) excitation layer: with the excitation layer on dry or wet removal photoresist；
Step (7) silanization treatment: it by the sample after removal excitation layer, is placed into silanization treatment device, has carried out selection
The silanization treatment of property；
Step (8) dry process development: reactive ion etching technology is utilized, the sample after silanization treatment is performed etching, silanization
The photoresist region of processing is remained dura mater is formed, and the photoresist that silanization region does not occur will be etched thoroughly, most
The photoetching offset plate figure with certain thickness hard formation is obtained afterwards；
The etching of step (9) functional graphic is transmitted: the litho pattern that dry process development obtains further etched and is transmitted to functional layer,
The final preparation for realizing nano functional device.
2. a kind of dry process development method of surface plasma photoetching small molecular photoresist according to claim 1,
Be characterized in that: the functional layer in the step (1), material include metal and medium, metal Ag, Au or Cr, medium Si,
MgF2Or Si3N4, 5~2000nm of functional layer thickness.
3. a kind of dry process development method of surface plasma photoetching small molecular photoresist according to claim 1,
Be characterized in that: the enhancement layer in the step (2), material include metal, metal Ag, Au or Al, 5~200nm of thicknesses of layers.
4. a kind of dry process development method of surface plasma photoetching small molecular photoresist according to claim 1,
Be characterized in that: the photoresist layer in the step (3), polymer average molecular weight is at small point of 3000~10000 in photoresist
Subsystem photoresist, hydroxyl quantity of the polymer in photosensitive front and back have significant change, 10~100nm of film thickness.
5. a kind of dry process development method of surface plasma photoetching small molecular photoresist according to claim 1,
Be characterized in that: the excitation layer in the step (4), film layer can be single layer, be also possible to multilayer film, and material includes metal and is situated between
Matter, 5~200nm of thicknesses of layers, metal Ag, Au or Al, medium MgF2、TiO2Or SiO2。
6. a kind of dry process development method of surface plasma photoetching small molecular photoresist according to claim 1,
Be characterized in that: the exposure in the step (5), litho machine are surface plasma photoetching machine.
7. a kind of dry process development method of surface plasma photoetching small molecular photoresist according to claim 1,
Be characterized in that: the excitation layer removal in the step (6), minimizing technology can be dry or wet.
8. a kind of dry process development method of surface plasma photoetching small molecular photoresist according to claim 1,
It is characterized in that: the silanization treatment in the step (7), 100~200 DEG C of processing unit temperature, the protection of chamber filling with inert gas,
Handle 0.1~5h of time.
9. a kind of dry process development method of surface plasma photoetching small molecular photoresist according to claim 1,
Be characterized in that: the dry process development in the step (8), reactive ion include oxygen radical and fluoro free radical surface plasma；
The etching of functional graphic in the step (8) is transmitted, and lithographic method includes ion beam etching, reactive ion in dry method
Etching and wet etching etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811509683.8A CN109521657A (en) | 2018-12-11 | 2018-12-11 | Dry developing method for small molecule photoresist in surface plasma photoetching |
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| CN201811509683.8A CN109521657A (en) | 2018-12-11 | 2018-12-11 | Dry developing method for small molecule photoresist in surface plasma photoetching |
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Cited By (3)
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| CN115047728A (en) * | 2022-07-01 | 2022-09-13 | 中国科学院光电技术研究所 | Imaging structure protection method and structure for plasma resonant cavity lens photoetching |
| TWI795094B (en) * | 2020-01-15 | 2023-03-01 | 美商蘭姆研究公司 | Processing apparatus, patterning structure and method of making the same |
| US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
| TWI795094B (en) * | 2020-01-15 | 2023-03-01 | 美商蘭姆研究公司 | Processing apparatus, patterning structure and method of making the same |
| TWI828961B (en) * | 2020-01-15 | 2024-01-11 | 美商蘭姆研究公司 | Patterning structure and method of making the same, method of depositing underlayers and substrate processing apparatus |
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| CN115047728A (en) * | 2022-07-01 | 2022-09-13 | 中国科学院光电技术研究所 | Imaging structure protection method and structure for plasma resonant cavity lens photoetching |
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