CN109514948B - High-temperature ceramic-based junction composite structure material - Google Patents

High-temperature ceramic-based junction composite structure material Download PDF

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CN109514948B
CN109514948B CN201811549298.6A CN201811549298A CN109514948B CN 109514948 B CN109514948 B CN 109514948B CN 201811549298 A CN201811549298 A CN 201811549298A CN 109514948 B CN109514948 B CN 109514948B
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molybdenum disulfide
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CN109514948A (en
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马李
何录菊
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Guangdong University of Petrochemical Technology
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
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    • C25D11/026—Anodisation with spark discharge
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    • B32—LAYERED PRODUCTS
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    • B32B2307/00—Properties of the layers or laminate
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Abstract

The invention discloses a high-temperature ceramic-based junction composite structure material which comprises a ceramic matrix layer, a first molybdenum disulfide layer, a first micro-arc ceramic film layer, a second molybdenum disulfide layer, a second micro-arc ceramic film layer, a third molybdenum disulfide layer, a graphene layer and an epoxy resin protective layer, wherein the first molybdenum disulfide layer, the first micro-arc ceramic film layer, the second molybdenum disulfide layer, the second micro-arc ceramic film layer, the third molybdenum disulfide layer, the graphene layer and the epoxy resin protective layer are sequentially deposited and superposed on the ceramic matrix layer. The high-temperature ceramic-based junction composite structure material has the characteristics of high stability, good consistency, high induction sensitivity and long service life.

Description

High-temperature ceramic-based junction composite structure material
Technical Field
The invention relates to the technical field of ceramic-based junction composite structure materials, in particular to a high-temperature ceramic-based junction composite structure material.
Background
At present, the full scale output amplitude of the ceramic pressure sensor at home and abroad is lower, and when the excitation voltage of the sensor is 5V/DC, the full scale output amplitude is generally about 10 mV. Although piezoresistive ceramic pressure sensors have excellent corrosion resistance and temperature stability, and a certain trend is also found for replacing diffused silicon pressure sensors, the sensitivity of piezoresistive ceramic pressure sensors is lower than that of diffused silicon pressure sensors (generally, the excitation voltage of the sensor is 5V/DC, and the range output can reach about 20 mV). In order to further exert the performance and price advantages of the piezoresistive ceramic pressure sensor, especially keep the advantages in the fields of sensor networks and industrial automation in market competition, and research and development of the high-sensitivity micro-nano ceramic pressure sensor are imperative.
Another important objective in the development of high sensitivity ceramic pressure sensors is to increase the sensitivity of the sensor, which is highly advantageous for its matching to signal conditioning circuitry. Because international integrated circuit pressure transmitter signal conditioning circuits are basically designed according to the output sensitivity of a diffused silicon pressure sensor, if a ceramic pressure sensor is directly connected to an input end of the integrated circuit, the signal amplitude is too low, the signal-to-noise ratio is poor, and a preamplifier is required to be added to amplify a sensor output signal and then input the amplified sensor output signal into the transmitter signal conditioning circuit. Since the integrated piezoresistive ceramic pressure sensor is a new pressure sensor developed in recent years, there is an integration process for the manufacturers of integrated circuit chips, and the space for improving the amplifier part of the variable gain of the preposed signal conditioning IC chip is not large, so that the sensitivity of the ceramic pressure sensor is very necessary to be improved.
The ceramic pressure sensors developed and used at present are various in types, most of the manufacturing processes are complex, and raw materials are not uniformly mixed; the material has high cost, high temperature resistance and high price, is not resistant to chemical corrosion, is not suitable for being used in severe environment; low sensitivity and can not meet the needs of modern industry.
In view of the above, chinese invention patent CN201010208526.0 discloses a method for preparing a ceramic composite elastomer of a force sensor and a raw material mixing device thereof, the method comprises the steps of mixing pre-mixed micron-sized zirconium dioxide and micron-sized aluminum oxide in a gas phase, outputting in a form of uniform spraying to obtain raw material powder of the ceramic composite elastomer, and firing; the mass ratio of the micron-sized zirconium dioxide to the micron-sized aluminum oxide is 1: 0.25-7.5. However, the prepared high-temperature ceramic-based junction composite material is still a powder material, and the acid and alkali corrosion resistance of the powder material directly influences the application of the powder material in practice; meanwhile, in the actual use process, due to the limitation of compactness of the powder material, the pressure resistance of the powder material also directly influences the sensitivity of the powder material, and the popularization and application of the powder material are directly limited.
Disclosure of Invention
The invention mainly aims to provide a high-temperature ceramic-based junction composite structure material which takes a high-temperature-resistant ceramic material as a substrate material and has the characteristics of high stability, good consistency, high induction sensitivity and long service life. .
The invention can be realized by the following technical scheme:
the invention discloses a high-temperature ceramic-based junction composite structure material which comprises a ceramic matrix layer, a first molybdenum disulfide layer, a first micro-arc ceramic film layer, a second molybdenum disulfide layer, a second micro-arc ceramic film layer, a third molybdenum disulfide layer, a graphene layer and an epoxy resin protective layer, wherein the first molybdenum disulfide layer, the first micro-arc ceramic film layer, the second molybdenum disulfide layer, the second micro-arc ceramic film layer, the third molybdenum disulfide layer, the graphene layer and the epoxy resin protective layer are sequentially deposited and superposed on the ceramic matrix layer.
Furthermore, the thickness of the first micro-arc ceramic film layer is 10-100 μm, and the surface roughness is 2-6 μm.
Furthermore, the thickness of the second micro-arc ceramic film layer is 10-100 μm, and the surface roughness is 2-6 μm.
Further, a first molybdenum disulfide layer having a thickness of 10 to 20 μm is deposited on the ceramic substrate layer by a magnetron sputtering method.
Further, the second molybdenum disulfide layer is 10-20 microns thick and is deposited on the first micro-arc ceramic film layer through a magnetron sputtering method.
Further, the third molybdenum disulfide layer is 10-20 microns thick and is deposited on the second micro-arc ceramic film layer through a magnetron sputtering method.
Further, the thickness of the graphene layer is 2-6 microns, and the graphene layer is deposited on the third molybdenum disulfide layer through a magnetron sputtering method.
The high-temperature ceramic-based composite structure material has the following beneficial technical effects:
the graphene composite structure material has the advantages that firstly, the stability is high, the characteristic of large specific surface area and good surface contact capability of graphene are fully exerted by arranging the first molybdenum disulfide layer, the first micro-arc ceramic film layer and the second molybdenum disulfide layer and arranging the third molybdenum disulfide layer on the second micro-arc ceramic film layer and the graphene layer, the graphene composite structure material interacts with the epoxy resin protective layer to form good acid and alkali corrosion resistance, and the corrosion resistance of the high-temperature ceramic-based composite structure material is improved;
secondly, the consistency is good, a buffer composite structure is formed between two different layers by adopting a multilayer composite structure and a first molybdenum disulfide layer, a second molybdenum disulfide layer and a third molybdenum disulfide layer, so that the friction increasing effect of molybdenum disulfide at high temperature is fully exerted, and a protective structure is formed by the synergistic effect of the molybdenum disulfide and a first micro-arc ceramic film layer and a second micro-arc ceramic film layer, so that the quality defect caused by the fact that the first micro-arc ceramic film layer or the second micro-arc ceramic film layer is not in close contact with each other when the first micro-arc ceramic film layer or the second micro-arc ceramic film layer is used independently;
thirdly, the induction sensitivity is high, a buffer composite structure is formed between two different layers by adopting a multilayer composite structure and the first molybdenum disulfide layer, the second molybdenum disulfide layer and the third molybdenum disulfide layer, so that the friction increasing effect of molybdenum disulfide at high temperature is fully exerted, a compact structure is formed by the synergistic effect of the molybdenum disulfide, the first micro-arc ceramic film layer and the second micro-arc ceramic film layer, and the induction sensitivity of the high-temperature ceramic-based junction composite structure material is improved;
fourthly, the service life is long, and the third molybdenum disulfide layer covers the surface of the second micro-arc ceramic membrane layer, so that the problem of acid-base corrosion of the independent second micro-arc ceramic membrane layer caused by compactness among the layers is effectively solved, the protective effect of the epoxy resin protective layer is well exerted, and the service life is effectively prolonged;
fifthly, the cost is low, the whole preparation process of the high-temperature ceramic-based junction composite structure material can be completed in a magnetron sputtering system, continuous production control can be realized without sequence conversion, the preparation time is saved, large-scale production is facilitated, and the cost is saved by more than 30% compared with the traditional mode.
Drawings
FIG. 1 is a schematic diagram of the overall film structure of a high temperature ceramic matrix composite structure material of the present invention;
the designations in the drawings include: 100. the ceramic substrate comprises a ceramic substrate layer, 200 parts of a first molybdenum disulfide layer, 300 parts of a first micro-arc ceramic film layer, 400 parts of a second molybdenum disulfide layer, 500 parts of a second micro-arc ceramic film layer, 600 parts of a third molybdenum disulfide layer, 700 parts of a graphene layer.
Detailed Description
In order to make the technical solutions of the present invention better understood by those skilled in the art, the following detailed description of the present invention is provided with reference to the accompanying drawings.
Example 1
As shown in fig. 1, the invention discloses a high-temperature ceramic-based composite structure material, which comprises a ceramic substrate layer 100, a first molybdenum disulfide layer 200, a first micro-arc ceramic film layer 300, a second molybdenum disulfide layer 400, a second micro-arc ceramic film layer 500, a third molybdenum disulfide layer 600, a graphene layer 700 and an epoxy resin protective layer, wherein the first molybdenum disulfide layer 200, the first micro-arc ceramic film layer 300, the second molybdenum disulfide layer 400, the second micro-arc ceramic film layer 500, the third molybdenum disulfide layer 600, the graphene layer 700 and the epoxy resin protective layer are sequentially deposited and superposed on the ceramic substrate layer 100.
In the embodiment, the thickness of the first micro-arc ceramic film layer 300 is 100 μm, and the surface roughness thereof is 4 μm. The thickness of the second micro-arc ceramic film layer 500 is 10 μm, and the surface roughness thereof is 6 μm. A first molybdenum disulfide layer 200 having a thickness of 15 microns was deposited on the ceramic substrate layer 100 by magnetron sputtering. The second molybdenum disulfide layer 400, having a thickness of 10 microns, was deposited on the first micro-arc ceramic film layer 300 by magnetron sputtering. The third molybdenum disulfide layer 600, having a thickness of 20 microns, is deposited on the second micro-arc ceramic film layer 500 by magnetron sputtering. The graphene layer 700, which is 4 microns thick, is deposited on the third molybdenum disulfide layer 600 by a magnetron sputtering method.
Example 2
As shown in fig. 1, the invention discloses a high-temperature ceramic-based composite structure material, which comprises a ceramic substrate layer 100, a first molybdenum disulfide layer 200, a first micro-arc ceramic film layer 300, a second molybdenum disulfide layer 400, a second micro-arc ceramic film layer 500, a third molybdenum disulfide layer 600, a graphene layer 700 and an epoxy resin protective layer, wherein the first molybdenum disulfide layer 200, the first micro-arc ceramic film layer 300, the second molybdenum disulfide layer 400, the second micro-arc ceramic film layer 500, the third molybdenum disulfide layer 600, the graphene layer 700 and the epoxy resin protective layer are sequentially deposited and superposed on the ceramic substrate layer 100.
In the embodiment, the first micro-arc ceramic film layer 300 has a thickness of 55 μm and a surface roughness of 2 μm. The second micro-arc ceramic film layer 500 has a thickness of 100 μm and a surface roughness of 4 μm. A first molybdenum disulfide layer 200 having a thickness of 10 microns was deposited on the ceramic substrate layer 100 by magnetron sputtering. The second molybdenum disulfide layer 400, having a thickness of 20 microns, was deposited on the first micro-arc ceramic film layer 300 by magnetron sputtering. The third molybdenum disulfide layer 600, having a thickness of 15 microns, was deposited on the second micro-arc ceramic film layer 500 by magnetron sputtering. The graphene layer 700, having a thickness of 2 microns, is deposited on the third molybdenum disulfide layer 600 by a magnetron sputtering method.
Example 3
As shown in fig. 1, the invention discloses a high-temperature ceramic-based composite structure material, which comprises a ceramic substrate layer 100, a first molybdenum disulfide layer 200, a first micro-arc ceramic film layer 300, a second molybdenum disulfide layer 400, a second micro-arc ceramic film layer 500, a third molybdenum disulfide layer 600, a graphene layer 700 and an epoxy resin protective layer, wherein the first molybdenum disulfide layer 200, the first micro-arc ceramic film layer 300, the second molybdenum disulfide layer 400, the second micro-arc ceramic film layer 500, the third molybdenum disulfide layer 600, the graphene layer 700 and the epoxy resin protective layer are sequentially deposited and superposed on the ceramic substrate layer 100.
In the embodiment, the thickness of the first micro-arc ceramic film layer 300 is 10 μm, and the surface roughness thereof is 6 μm. The second micro-arc ceramic film layer 500 has a thickness of 55 μm and a surface roughness of 2 μm. A first molybdenum disulfide layer 200 having a thickness of 20 microns is deposited on the ceramic substrate layer 100 by magnetron sputtering. The second molybdenum disulfide layer 400, having a thickness of 15 microns, was deposited on the first micro-arc ceramic film layer 300 by magnetron sputtering. The third molybdenum disulfide layer 600, having a thickness of 10 microns, was deposited on the second micro-arc ceramic film layer 500 by magnetron sputtering. The graphene layer 700, having a thickness of 6 microns, was deposited on the third molybdenum disulfide layer 600 by a magnetron sputtering method.
Example 4
As shown in fig. 1, the invention discloses a high-temperature ceramic-based composite structure material, which comprises a ceramic substrate layer 100, a first molybdenum disulfide layer 200, a first micro-arc ceramic film layer 300, a second molybdenum disulfide layer 400, a second micro-arc ceramic film layer 500, a third molybdenum disulfide layer 600, a graphene layer 700 and an epoxy resin protective layer, wherein the first molybdenum disulfide layer 200, the first micro-arc ceramic film layer 300, the second molybdenum disulfide layer 400, the second micro-arc ceramic film layer 500, the third molybdenum disulfide layer 600, the graphene layer 700 and the epoxy resin protective layer are sequentially deposited and superposed on the ceramic substrate layer 100.
In the embodiment, the thickness of the first micro-arc ceramic film layer 300 is 80 μm, and the surface roughness thereof is 5 μm. The second micro-arc ceramic film layer 500 has a thickness of 90 μm and a surface roughness of 3 μm. A first molybdenum disulfide layer 200 having a thickness of 12 microns is deposited on the ceramic substrate layer 100 by magnetron sputtering. The second molybdenum disulfide layer 400, having a thickness of 18 microns, was deposited on the first micro-arc ceramic film layer 300 by magnetron sputtering. The third molybdenum disulfide layer 600, having a thickness of 14 microns, was deposited on the second micro-arc ceramic film layer 500 by magnetron sputtering. The graphene layer 700, which is 3 microns thick, is deposited on the third molybdenum disulfide layer 600 by a magnetron sputtering method.
Example 5
As shown in fig. 1, the invention discloses a high-temperature ceramic-based composite structure material, which comprises a ceramic substrate layer 100, a first molybdenum disulfide layer 200, a first micro-arc ceramic film layer 300, a second molybdenum disulfide layer 400, a second micro-arc ceramic film layer 500, a third molybdenum disulfide layer 600, a graphene layer 700 and an epoxy resin protective layer, wherein the first molybdenum disulfide layer 200, the first micro-arc ceramic film layer 300, the second molybdenum disulfide layer 400, the second micro-arc ceramic film layer 500, the third molybdenum disulfide layer 600, the graphene layer 700 and the epoxy resin protective layer are sequentially deposited and superposed on the ceramic substrate layer 100.
In the embodiment, the thickness of the first micro-arc ceramic film layer 300 is 30 μm, and the surface roughness thereof is 3 μm. The second micro-arc ceramic film layer 500 has a thickness of 40 μm and a surface roughness of 3 μm. A first molybdenum disulfide layer 200 having a thickness of 16 microns is deposited on the ceramic substrate layer 100 by magnetron sputtering. The second molybdenum disulfide layer 400, having a thickness of 12 microns, was deposited on the first micro-arc ceramic film layer 300 by magnetron sputtering. The third molybdenum disulfide layer 600, having a thickness of 18 microns, was deposited on the second micro-arc ceramic film layer 500 by magnetron sputtering. The graphene layer 700, having a thickness of 2.6 microns, was deposited on the third molybdenum disulfide layer 600 by a magnetron sputtering method.
Comparative example 1
The only difference between comparative example 1 and example 5 is that there is no second molybdenum disulfide layer 400 between the first micro-arc ceramic film layer 300 and the second micro-arc ceramic film layer 500.
Compared with the comparative example 1, the defect stability of the batch of the example 5 is improved by more than 68% compared with that of the comparative example 1, the induction sensitivity is improved by more than 20% compared with that of the comparative example 1, and the service life is prolonged by 3%.
Comparative example 2
The only difference between comparative example 2 and example 5 is that there is no third molybdenum disulfide layer 600 between the first molybdenum disulfide layer 200 and the second micro-arc ceramic film layer 500.
Compared with the comparative example 2, the defect stability of the batch of the example 5 is improved by more than 23 percent compared with the comparative example 2, the induction sensitivity is improved by more than 5 percent compared with the comparative example 2, and the service life is longer than 8 percent compared with the comparative example 2.
Comparative example 3
The difference between the comparative example 3 and the example 5 is that there is no second molybdenum disulfide layer 400 between the first micro-arc ceramic film layer 300 and the second micro-arc ceramic film layer 500, and there is no third molybdenum disulfide layer 600 between the first molybdenum disulfide layer 200 and the second micro-arc ceramic film layer 500.
Compared with the comparative example 3, the example 5 shows that the batch defect stability is improved by more than 82% compared with the comparative example 2, the induction sensitivity is improved by more than 11% compared with the comparative example 3, and the service life is improved by more than 23% compared with the comparative example 3.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner; the present invention may be readily implemented by those of ordinary skill in the art as illustrated in the accompanying drawings and described above; however, those skilled in the art should appreciate that they can readily use the disclosed conception and specific embodiments as a basis for designing or modifying other structures for carrying out the same purposes of the present invention; meanwhile, any changes, modifications, and evolutions of the equivalent changes of the above embodiments according to the actual techniques of the present invention are still within the protection scope of the technical solution of the present invention.

Claims (7)

1. A high temperature ceramic matrix composite structure material characterized by: the coating comprises a ceramic matrix layer (100), a first molybdenum disulfide layer (200), a first micro-arc ceramic film layer (300), a second molybdenum disulfide layer (400), a second micro-arc ceramic film layer (500), a third molybdenum disulfide layer (600), a graphene layer (700) and an epoxy resin protective layer, wherein the first molybdenum disulfide layer (200), the first micro-arc ceramic film layer (300), the second molybdenum disulfide layer (400), the second micro-arc ceramic film layer (500), the third molybdenum disulfide layer (600), the graphene layer (700) and the epoxy resin protective layer are sequentially deposited and superposed on the ceramic matrix layer (100).
2. The high temperature ceramic matrix composite structural material of claim 1, wherein: the thickness of the first micro-arc ceramic film layer (300) is 10-100 mu m, and the surface roughness is 2-6 mu m.
3. The high temperature ceramic matrix bonded composite structure material according to claim 1 or 2, wherein: the thickness of the second micro-arc ceramic film layer (500) is 10-100 mu m, and the surface roughness is 2-6 mu m.
4. The high temperature ceramic matrix composite structural material of claim 3, wherein: the first molybdenum disulfide layer (200) has a thickness of 10-20 microns and is deposited on the ceramic substrate layer (100) by magnetron sputtering.
5. The high temperature ceramic matrix composite structural material of claim 4, wherein: the second molybdenum disulfide layer (400) is 10-20 microns thick and is deposited on the first micro-arc ceramic film layer (300) through a magnetron sputtering method.
6. The high temperature ceramic matrix composite structural material of claim 5, wherein: the third molybdenum disulfide layer (600) is 10-20 microns thick and is deposited on the second micro-arc ceramic film layer (500) through a magnetron sputtering method.
7. The high temperature ceramic matrix composite structural material of claim 6, wherein: the graphene layer (700) has a thickness of 2-6 microns and is deposited on the third molybdenum disulfide layer (600) by a magnetron sputtering process.
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CN105063713A (en) * 2015-07-29 2015-11-18 兰州空间技术物理研究所 Aluminum alloy surface composite membrane for spacecraft and preparation method
CN106374045A (en) * 2016-10-28 2017-02-01 广东石油化工学院 Thin-film device based on GeSbTe phase-change material
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