CN109509819A - It is a kind of based on erbium, the electroluminescent device of fluorin-doped ZnO film and preparation method - Google Patents
It is a kind of based on erbium, the electroluminescent device of fluorin-doped ZnO film and preparation method Download PDFInfo
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- CN109509819A CN109509819A CN201811214982.9A CN201811214982A CN109509819A CN 109509819 A CN109509819 A CN 109509819A CN 201811214982 A CN201811214982 A CN 201811214982A CN 109509819 A CN109509819 A CN 109509819A
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- 229910052691 Erbium Inorganic materials 0.000 title claims abstract description 34
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 65
- 239000010703 silicon Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 112
- 239000011787 zinc oxide Substances 0.000 claims description 58
- 238000000151 deposition Methods 0.000 claims description 23
- 230000008021 deposition Effects 0.000 claims description 23
- 238000004544 sputter deposition Methods 0.000 claims description 21
- 239000000919 ceramic Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 5
- 150000002910 rare earth metals Chemical class 0.000 claims description 5
- 238000004062 sedimentation Methods 0.000 claims description 5
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 238000004020 luminiscence type Methods 0.000 abstract description 10
- 238000001194 electroluminescence spectrum Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 49
- 239000007789 gas Substances 0.000 description 14
- 238000010348 incorporation Methods 0.000 description 14
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 9
- 230000000007 visual effect Effects 0.000 description 9
- 238000000407 epitaxy Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910016495 ErF3 Inorganic materials 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910003363 ZnMgO Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- -1 rare earth erbium ion Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- QGJSAGBHFTXOTM-UHFFFAOYSA-K trifluoroerbium Chemical compound F[Er](F)F QGJSAGBHFTXOTM-UHFFFAOYSA-K 0.000 description 1
- 229960001296 zinc oxide Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
- H01L33/285—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
- H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of electroluminescent device and preparation method thereof and luminescent method based on erbium, fluorin-doped ZnO film, belongs to photoelectron technical field.The electroluminescent device, including extension silicon substrate, silicon substrate front are successively arranged luminescent layer, transparent electrode layer, and the silicon substrate back side is equipped with Ohm contact electrode, and the luminescent layer is erbium and fluorin-doped ZnO film.(i.e. Au Ohm contact electrode connects negative voltage to electroluminescent device of the invention in the forward bias of 6~10V, ito transparent electrode layer connects positive voltage) under can shine, and there are and be only located at the characteristic luminescence peak of the erbium ion of visible region and infrared light district, the glow peak without any zno-based qualitative correlation in electroluminescence spectrum.
Description
Technical field
The present invention relates to photoelectron technical fields, and in particular to a kind of electroluminescent based on erbium, fluorin-doped ZnO film
Device and preparation method thereof.
Background technique
Rear-earth-doped oxide luminescent material, which shows in plane, laser material and optical-fibre communications etc. are multi-field has important answer
With.Due to Er3+Emission wavelength~1.54 μm of ion internal layer 4f electron transition, positioned at the minimal losses of optical communication silica fibre
Window, thus research is mixed Er material and is had a very important significance to realizing that silicon based opto-electronics are integrated.All the time, people will pay attention to
Power concentrate on Er doping silica (A.Irrera, F.Iacona, G.Franzo, M.Miritello, R.L.Savio,
M.E.Castagna, S.Coffa, and F.Priolo, J.Appl.Phys.107,054302 (2010)), silicon nitride
(S.Yerci, R.Li, and L.Dal Negro, Appl.Phys.Lett.97,081109 (2010)) material system, but this
Two kinds of systems are there are some for example cut-in voltages are high, the more stubborn problem such as electrical pumping difficulty.In addition, being adulterated based on Er
The research of III-V race's material is also more, GaN material (M.Garter, J.Scofield, the R.Birkhahn of especially Er doping
And A.J.Steckl, Appl.Phys.Lett.74,182 (1999)；R.Dahal, C.Ugolini, J.Y.Lin,
H.X.Jiang and J.M.Zavada, Appl.Phys.Lett.97,141109 (2010)), but needed when the preparation of this material
High-vacuum equipment is wanted, and in a foreseeable future can also face Ga resource exhaustion problem.Therefore, seek it is a kind of it is resourceful,
Device cut-in voltage is low, high-luminous-efficiency novel semi-conductor host material has important practical significance.
ZnO is as a kind of II-VI common race's semiconductor material with wide forbidden band, and forbidden bandwidth is 3.37eV at room temperature, swashs
Sub- binding energy is 60meV.And its conductive capability is moderate, and the injection of carrier is easier to realize with transmission, therefore is relatively suitble to do
Electroluminescent device.ZnO also has Radiation hardness strong simultaneously, and crystal growth temperature is low, and preparation method is simply various, is easy to wet-chemical
The advantages that corrosion, is widely applied in the multiple materials such as photoelectricity, piezoelectricity, magnetism and air-sensitive field.
Existing many researchs realize the luminescence generated by light based on Er doping ZnO, but adulterate the electroluminescent of ZnO silicon substrate based on Er
The report of device is few, and being based particularly on Er, F codope ZnO/n-Si type electroluminescent device yet there are no all reports.
Yang Yang etc. is in p+Deposition mixes the ZnO film of Er on-Si, is successfully prepared ZnO:Er/p+- Si heterojunction device (Yang
Yang,Yunpeng Li,Luelue Xiang,Xiangyang Ma,and Deren Yang,Applied Physics
Letters 102,181111 (2013)), positive drive voltage (p of the device in < 10V+- Si connects positive voltage) under issue Er
Characteristic luminescence peak, but the relevant luminous wide packet of Lacking oxygen in ZnO is detected in visible region.In this case, zno-based qualitative correlation
Shine vie each other with the luminous of Er, be unfavorable for further increasing the luminous efficiency of Er in device.Yang Yang etc. is also attempted in n+-
ZnMgO/ZnO multilayered structure is deposited on Si, has successfully prepared ZnMgO/ZnO/n+- Si multilayered structure device (Yang Yang,
Yunpeng Li,Canxing Wang,Chen Zhu,Chunyan Lv,Xiangyang Ma,and Deren Yang,
Adv.Optical Mater.2,240 (2014)), the only relevant glow peak of discovery Er in Devices Electroluminescent spectrum, but device
Part structure is complex, and heat treatment condition is more harsh.Therefore, a kind of more simple and convenient side for realizing that pure Er is luminous is needed
Method.
Summary of the invention
The electroluminescent that can be realized pure Er and shine that is simple, facilitating operation that the purpose of the present invention is to provide a kind of structures
Device.
To achieve the above object, the present invention adopts the following technical scheme:
A kind of electroluminescent device based on erbium, fluorin-doped ZnO film, including silicon substrate, silicon substrate front are successively set
There are luminescent layer, transparent electrode layer, the silicon substrate back side is equipped with Ohm contact electrode, and the luminescent layer is erbium, fluorin-doped ZnO
Film.
Preferably, the luminescent layer with a thickness of 100~140nm.
Preferably, the doping of rare earth erbium is 1%~5% in the luminescent layer, the doping of fluorine with atomic percentage
Amount is 1%~3%.The doping of rare earth erbium cannot it is excessively high can not be too low, it is excessively high to be easy to appear concentration quenching, too low device
Luminous intensity is not strong enough.More preferably, the doping of rare earth erbium is 1% in the luminescent layer, the doping of fluorine is 3%.
Preferably, the transparent electrode layer is transparent ito film.The film conductivity is good, light transmittance is high.
Preferably, the transparent electrode layer with a thickness of 140~160nm.
The conductive material that this field uses can be selected in Ohm contact electrode, preferably, the Ohm contact electrode is
Golden (Au) film, the Au film with a thickness of 140~160nm.
The silicon substrate uses n-type silicon chip, preferably, the silicon substrate is N-shaped extension<100>silicon wafer, specifically attaches most importance to
Silicon epitaxy layer (the resistance of epitaxial light p-doped on the silicon wafer (resistivity 0.0011-0.0012 Ω cm, thickness~625 μm) of p-doped
Rate 3-15 Ω cm, thickness~45 μm), which advantageously reduces device current, promotes the utilization rate of injection electronics.
The electroluminescent device of the ZnO film ion co-doped based on rare earth erbium ion and halogens fluorine provided by the invention
Electroluminescent is derived from collision excitation mechanism, specific as follows:
Device can generate one layer of SiO after high-temperature heat treatment, between ZnO film and Si substratexThin layer (~3nm), and
Wherein there is a large amount of defect.Under certain electric field action, the electronics in n-Si is easy by SiOxThe defects of captured, quilt
The electronics of capture enters SiO through P-F or TAT conductive mechanismxConduction band.In SiOxElectronics in conduction band will be under electric field action
Accelerate.In addition, due to SiOxElectron affinity energy be 0.9eV, the electron affinity energy of ZnO is 4.35eV, therefore when electronics is from SiOx
Conduction band when dropping into the conduction band of ZnO, electrons obtain the energy of additional 3.45eV, and such electronics obtains enough dynamic
Can, become " thermoelectron ", hot electron impingement excites the Er in ZnO3+, issue Er3+Characteristic luminescence peak, and since electronics is
Directly excite Er3+, therefore will not observe luminous with zno-based qualitative correlation.And F-Be co-doped with and can influence Er3+Around ion
Crystalline field symmetry, the F of small size-Ion is in O2-Displacement, distortion of lattice can be introduced in the lattice of ZnO, both
Effect can promote Er ion transition probability, to keep the electroluminescent of device stronger.
The present invention also provides the preparation method based on erbium, the electroluminescent device of fluorin-doped ZnO film, packets
Include following steps:
(1) erbium, fluorin-doped ZnO film are deposited by magnetron sputtering method in silicon substrate front, then in O2It is hot in atmosphere
Processing；
(2) transparent electrode layer is deposited on erbium, fluorin-doped ZnO film using DC sputtering；
(3) using DC sputtering in silicon substrate backside deposition Ohm contact electrode.
In step (1), sputtering sedimentation is carried out using the zinc-oxide ceramic target doped with ErF_3 films.The incorporation of erbium passes through tune
The content of ErF_3 films controls in whole ceramic target, and ZnO thin film doped integral thickness is by adjusting being applied to the function in ceramic target
Rate and sputtering time control.
Preferably, the temperature of the heat treatment is 700~800 DEG C in step (1), the time is 3~120min.
The present invention also provides a kind of luminescent method based on erbium, the electroluminescent device of fluorin-doped ZnO film, saturating
Apply the voltage of 6~10V between prescribed electrode layer and Ohm contact electrode.
It is provided by the invention based on erbium, fluorin-doped ZnO film electroluminescent device apply 6~10V forward bias
It can shine under pressure (i.e. silicon chip back side Au electrode connects negative voltage, and positive ito film connects positive voltage), and have in glow peak and only have
Er3+Relevant characteristic luminescence peak (wherein including~1.54 μm of infrared light), without any light from zno-based matter.
Compared with prior art, the present invention have the utility model has the advantages that
The present invention n-type silicon chip surface deposit erbium, fluorin-doped ZnO film, and then prepare electroluminescent device have and
Only Er3+Ion is at visible and infrared region characteristic luminescence peak, without any glow peak from zno-based qualitative correlation；And it prepares
Method is simple to operation.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of electroluminescent device of the present invention.
Fig. 2 is the luminous spectrogram of electroluminescent device visual field under different forward biases of embodiment 1.
Fig. 3 is the luminous spectrogram of electroluminescent device infrared region under different forward biases of embodiment 1.
Fig. 4 is the luminous spectrogram of electroluminescent device visual field under different forward biases of comparative example 1.
Fig. 5 is the luminous spectrogram of electroluminescent device infrared region under different forward biases of comparative example 1.
Fig. 6 is the electroluminescent device of embodiment 1 and the electroluminescent device of comparative example 1 at identical Injection Current (15mA)
The luminescent spectrum of lower visual field.
Fig. 7 is the electroluminescent device of embodiment 1 and the electroluminescent device of comparative example 1 at identical Injection Current (15mA)
The luminescent spectrum of lower infrared region.
Fig. 8 is the electroluminescent device of embodiment 2 and the electroluminescent device of comparative example 2 at identical Injection Current (15mA)
The luminescent spectrum of lower visual field.
Fig. 9 is the electroluminescent device of embodiment 2 and the electroluminescent device of comparative example 2 at identical Injection Current (15mA)
The luminescent spectrum of lower infrared region.
Figure 10 is the electroluminescent device of embodiment 3 and the electroluminescent device of embodiment 2 in identical Injection Current
The luminescent spectrum of visual field under (15mA).
Specific embodiment
Below with reference to embodiment and attached drawing, the present invention is described in detail.
As shown in Figure 1, the present invention provides a kind of electroluminescent device based on erbium, fluorin-doped ZnO film, including silicon lining
Bottom 1 is from bottom to top sequentially deposited at the positive luminescent layer 2 of silicon substrate 1 and transparent electrode layer 3, the Europe for being deposited on 1 back side of silicon substrate
Nurse contacts electrode 4.
Silicon substrate 1 is N-shaped<100>silicon epitaxial wafer；Luminescent layer 2 is the ZnO film that Er, F are co-doped with；Transparent electrode layer 3 is
Bright tin-doped indium oxide (ITO) electrode；Ohm contact electrode 4 is golden (Au) film.
Embodiment 1
(1) it takes having a size of 15 × 15mm2N-shaped<100>silicon epitaxial wafer (silicon wafer (resistivity 0.0011- of heavily doped phosphorus
0.0012 Ω cm, thickness~625 μm) on epitaxial light p-doped silicon epitaxy layer (3-15 Ω cm, thickness~45 μm)) be used as silicon
After cleaning, silicon wafer is placed in radio-frequency sputtering cavity for substrate, and pressure in cavity is evacuated to 5 × 10 using vacuum pump-3After Pa, lead to
Enter high-purity O2Gas and high-purity Ar gas (flow-rate ratio O2: Ar=1:2) to air pressure 4Pa, use incorporation molar percentage 1%ErF3ZnO
Ceramic target, which is sputtered, carrys out deposition film, and the power of application is 120W；In deposition process, silicon substrate temperature is maintained at 100 DEG C, sinks
The product time is 40min；
(2) film that deposition obtains is placed in O2In gas atmosphere, in 700 DEG C of heat treatment 120min, it is total to ultimately form Er, F
The ZnO film mixed, film thickness are~120nm, and with atomic percentage, the incorporation that the incorporation of Er is 1%, F is 3%；
It (3) is~transparent ITO electrode of 150nm, electricity by d.c. sputtering deposition thickness on the ZnO film that Er, F are co-doped with
Pole is diametrically~circle of 10mm；
It (4) the use of DC sputtering deposition thickness is the~Au Ohm contact electrode of 150nm at the silicon substrate back side, electrode is in
Diameter is the~circle of 10mm.
Au Ohm contact electrode in above-mentioned electroluminescent device is connect into negative voltage, ITO electrode connects positive voltage, tests the device
Visual field and infrared region electroluminescent (EL) spectrum of the part under different forward biases, as a result as shown in Figures 2 and 3.
Have in EL map and only Er3+Ion comes from zno-based matter at visible and infrared region characteristic luminescence peak, without any
Relevant glow peak.
With alive increase is applied, electroluminescent intensity is also increased with it.
Comparative example 1
(1) it takes having a size of 15 × 15mm2N-shaped<100>silicon epitaxial wafer (silicon wafer (resistivity 0.0011- of heavily doped phosphorus
0.0012 Ω cm, thickness~625 μm) on epitaxial light p-doped silicon epitaxy layer (3-15 Ω cm, thickness~45 μm)) be used as silicon
After cleaning, silicon wafer is placed in radio-frequency sputtering cavity for substrate, and pressure in cavity is evacuated to 5 × 10 using vacuum pump-3After Pa, lead to
Enter high-purity O2Gas and high-purity Ar gas (flow-rate ratio O2: Ar=1:2) to air pressure 4Pa, use incorporation molar percentage 0.5%Er2O3's
ZnO ceramic target, which is sputtered, carrys out deposition film, and the power of application is 120W；In deposition process, silicon substrate temperature is maintained at 100
DEG C, sedimentation time 40min；
(2) film that deposition obtains is placed in O2In gas atmosphere, in 700 DEG C of heat treatment 120min, ultimately forms and mix Er's
ZnO film, film thickness are~120nm, and with atomic percentage, the incorporation of Er is 1%；
It (3) is~transparent ITO electrode of 150nm by d.c. sputtering deposition thickness on the ZnO film for mix Er, electrode is in
Diameter is the~circle of 10mm；
It (4) the use of DC sputtering deposition thickness is the~Au Ohm contact electrode of 150nm at the silicon substrate back side, electrode is in
Diameter is the~circle of 10mm.
Au Ohm contact electrode in above-mentioned electroluminescent device is connect into negative voltage, ITO electrode connects positive voltage, tests the device
Visual field and infrared region electroluminescent (EL) spectrum of the part under different forward biases, as a result as shown in Figures 4 and 5.
Visual field at identical Injection Current (15mA) of the test comparison device and the electroluminescent device of embodiment 1 and
The luminescent spectrum of infrared light district, as a result as shown in Figures 6 and 7, as seen from the figure, the electroluminescent device of comparative example 1 is in identical injection
Under electric current (15mA), the characteristic luminescence intensity from rare earth erbium ion is much weaker than the electroluminescent device of embodiment 1
Luminous intensity.
Embodiment 2
(1) it takes having a size of 15 × 15mm2N-shaped<100>silicon epitaxial wafer (silicon wafer (resistivity 0.0011- of heavily doped phosphorus
0.0012 Ω cm, thickness~625 μm) on epitaxial light p-doped silicon epitaxy layer (3-15 Ω cm, thickness~45 μm)) be used as silicon
After cleaning, silicon wafer is placed in radio-frequency sputtering cavity for substrate, and pressure in cavity is evacuated to 5 × 10 using vacuum pump-3After Pa, lead to
Enter high-purity O2Gas and high-purity Ar gas (flow-rate ratio O2: Ar=1:2) to air pressure 4Pa, use incorporation molar percentage 1%ErF3ZnO
Ceramic target, which is sputtered, carrys out deposition film, and the power of application is 120W；In deposition process, silicon substrate temperature is maintained at 100 DEG C, sinks
The product time is 40min；
(2) film that deposition obtains is placed in O2In gas atmosphere, in 800 DEG C of heat treatment 120min, it is total to ultimately form Er, F
The ZnO film mixed, film thickness are~120nm, and with atomic percentage, the incorporation that the incorporation of Er is 1%, F is 3%；
It (3) is~transparent ITO electrode of 150nm, electricity by d.c. sputtering deposition thickness on the ZnO film that Er, F are co-doped with
Pole is diametrically~circle of 10mm；
It (4) the use of DC sputtering deposition thickness is the~Au Ohm contact electrode of 150nm at the silicon substrate back side, electrode is in
Diameter is the~circle of 10mm.
Au Ohm contact electrode in above-mentioned electroluminescent device is connect into negative voltage, ITO electrode connects positive voltage, tests the device
Visual field and infrared region EL spectrum of the part under different forward biases.
Have in EL map and only Er3+Ion comes from zno-based matter at visible and infrared region characteristic luminescence peak, without any
Relevant glow peak.
With alive increase is applied, electroluminescent intensity is also increased with it.
Comparative example 2
(1) it takes having a size of 15 × 15mm2N-shaped<100>silicon epitaxial wafer (silicon wafer (resistivity 0.0011- of heavily doped phosphorus
0.0012 Ω cm, thickness~625 μm) on epitaxial light p-doped silicon epitaxy layer (3-15 Ω cm, thickness~45 μm)) be used as silicon
After cleaning, silicon wafer is placed in radio-frequency sputtering cavity for substrate, and pressure in cavity is evacuated to 5 × 10 using vacuum pump-3After Pa, lead to
Enter high-purity O2Gas and high-purity Ar gas (flow-rate ratio O2: Ar=1:2) to air pressure 4Pa, use incorporation molar percentage 0.5%Er2O3's
ZnO ceramic target, which is sputtered, carrys out deposition film, and the power of application is 120W；In deposition process, silicon substrate temperature is maintained at 100
DEG C, sedimentation time 40min；
(2) film that deposition obtains is placed in Ar gas atmosphere, in 800 DEG C of heat treatment 120min, ultimately forms and mix Er's
ZnO film, film thickness are~120nm, and the incorporation of Er is atomic ratio 1%；
(3) by d.c. sputtering deposition thickness~150nm transparent ITO electrode on the ZnO film for mix Er, electrode is in straight
Diameter is the~circle of 10mm；
(4) DC sputtering deposition thickness~150nm Au Ohm contact electrode is used at the silicon substrate back side, electrode is in straight
Diameter is the~circle of 10mm.
Au Ohm contact electrode in above-mentioned electroluminescent device is connect into negative voltage, ITO electrode connects positive voltage, contrast test
Visible region and infrared light district EL spectrum of the device with the device in embodiment 2 at identical Injection Current (15mA), as a result
As shown in FIG. 8 and 9, as seen from the figure, the device of comparative example 2 is derived from rare earth Er under identical Injection Current3+The feature of ion
Luminous intensity is weaker than the luminous intensity of the device of embodiment 2.
Embodiment 3
(1) it takes having a size of 15 × 15mm2N-shaped<100>silicon epitaxial wafer (silicon wafer (resistivity 0.0011- of heavily doped phosphorus
0.0012 Ω cm, thickness~625 μm) on epitaxial light p-doped silicon epitaxy layer (3-15 Ω cm, thickness~45 μm)) be used as silicon
After cleaning, silicon wafer is placed in radio-frequency sputtering cavity for substrate, and pressure in cavity is evacuated to 5 × 10 using vacuum pump-3After Pa, lead to
Enter high-purity O2Gas and high-purity Ar gas (flow-rate ratio O2: Ar=1:2) to air pressure 4Pa, use incorporation molar percentage 1%ErF3, 2%
Er2O3ZnO ceramic target sputtered and carry out deposition film, the power of application is 120W；In deposition process, silicon substrate temperature is kept
At 100 DEG C, sedimentation time 40min；
(2) film that deposition obtains is placed in O2In atmosphere, in 700 DEG C of heat treatment 120min, ultimately forms Er, F and be co-doped with
ZnO film, film thickness is~120nm, and the incorporation of Er is atomic ratio 5%, and the incorporation of F is atomic ratio 3%；
(3) pass through DC reactive sputtering deposition thickness~150nm transparent ITO electrode on the ZnO film that Er, F are co-doped with,
Electrode is diametrically~circle of 10mm；
(4) DC sputtering deposition thickness~150nm Au Ohm contact electrode is used at the silicon substrate back side, electrode is in straight
Diameter is the~circle of 10mm.
Au Ohm contact electrode in above-mentioned electroluminescent device is connect into negative voltage, ITO electrode connects positive voltage, contrast test
Device visible region EL spectrum at identical Injection Current (15mA) with the device in embodiment 2, the results are shown in Figure 10, by
Figure remains unchanged it is found that Er content in ceramic target is increased to 5%, F content, and slight concentration quenching phenomena occurs for device, with reality
It applies the device based on 1% content Er of doping, the ZnO film of 3% content F in example 2 to compare, device described in embodiment 3 is derived from dilute
Native Er3+The characteristic luminescence of ion is relatively weak.
Claims (10)
1. a kind of electroluminescent device based on erbium, fluorin-doped ZnO film, including silicon substrate, silicon substrate front are successively arranged
Luminescent layer, transparent electrode layer, the silicon substrate back side are equipped with Ohm contact electrode, which is characterized in that the luminescent layer is erbium, fluorine is total
The ZnO film of doping.
2. the electroluminescent device based on erbium, fluorin-doped ZnO film as described in claim 1, which is characterized in that the hair
Photosphere with a thickness of 100~140nm.
3. the electroluminescent device based on erbium, fluorin-doped ZnO film as claimed in claim 1 or 2, which is characterized in that with
Atomic percentage, the doping of rare earth erbium is 1%~5% in the luminescent layer, and the doping of fluorine is 1%~3%.
4. the electroluminescent device based on erbium, fluorin-doped ZnO film as described in claim 1, which is characterized in that described
Prescribed electrode layer is transparent tin-doped indium oxide film.
5. the electroluminescent device as described in claim 1 or 4 based on erbium, fluorin-doped ZnO film, which is characterized in that institute
State transparent electrode layer with a thickness of 140~160nm.
6. the electroluminescent device based on erbium, fluorin-doped ZnO film as described in claim 1, which is characterized in that the silicon
Substrate is N-shaped extension<100>silicon wafer.
7. the preparation side as claimed in any one of claims 1 to 6 based on erbium, the electroluminescent device of fluorin-doped ZnO film
Method, which comprises the following steps:
(1) erbium, fluorin-doped ZnO film are deposited by magnetron sputtering method in silicon substrate front, then in O2It is heat-treated in atmosphere；
(2) transparent electrode layer is deposited on erbium, fluorin-doped ZnO film using DC sputtering；
(3) using DC sputtering in silicon substrate backside deposition Ohm contact electrode.
8. preparation method as claimed in claim 7, which is characterized in that in step (1), using the zinc oxide doped with ErF_3 films
Ceramic target carries out sputtering sedimentation.
9. preparation method as claimed in claim 7, which is characterized in that in step (1), the temperature of the heat treatment is 700~
800 DEG C, the time is 3~120min.
10. the luminous side as described in any one of claims 1 to 6 based on erbium, the electroluminescent device of fluorin-doped ZnO film
Method, which is characterized in that apply the voltage of 6~10V between transparent electrode layer and Ohm contact electrode.
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